CN102522914A - Silicon controlled rectifier commutation dipulse power supply of high frequency switching power supply modulation - Google Patents
Silicon controlled rectifier commutation dipulse power supply of high frequency switching power supply modulation Download PDFInfo
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- CN102522914A CN102522914A CN2011104301593A CN201110430159A CN102522914A CN 102522914 A CN102522914 A CN 102522914A CN 2011104301593 A CN2011104301593 A CN 2011104301593A CN 201110430159 A CN201110430159 A CN 201110430159A CN 102522914 A CN102522914 A CN 102522914A
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Abstract
The invention discloses a silicon controlled rectifier commutation dipulse power supply of high frequency switching power supply modulation. The power supply is formed by a high frequency switching power supply section, a bridge rectification section, an inversion section and a control section. A 380v three-phase alternating current enters into the high frequency switching power supply section. Through low voltage bridge rectification, two pro and con pulsating direct currents are generated to a center. Through an inversion silicon controlled rectifier, low-frequency positive and negative double pulse voltages are generated. 1-100 Hertz frequency modulation, such as electroplating and the like, can be satisfied. The power supply of the invention is mainly used in a pulse width modulation power supply of electroplating, electrolysis, oxidation, electrochemistry and the like. The power supply has a breakthrough on an aspect of double pulse current power. The current power is hundreds amperes, but according to the invention, the power can reach tens of thousands amperes. Cost is low. The common electroplating and electrolysis can realize functional applications.
Description
Technical field
The present invention relates to a kind of electroplating power supply circuit, particularly a kind of thyristor commutation dual-pulse power supply of high frequency switch power modulation.
Background technology
The main igbt that adopts of its low pressure inversion part of the dual-pulse power supply of prior art belongs to the import element, and silicon chip is domestic still not to have production, and has the defective that price is high, electric current is little; It is all right that high voltage-small current is used, with high costs during big electric current, and many current unevenness when parallelly connected are even; And if adopt FET, then electric current is too little, many will be out of order when parallelly connected such as during 500A; And prior art does not still have high-power components, and if adopt gate turn-off controllable silicon, can cause driving difficulty; Belonged to superseded element, do not had low voltage component, it is higher to consume energy.
Summary of the invention
The invention provides a kind of thyristor commutation dual-pulse power supply of high frequency switch power modulation, to remedy the deficiency of prior art.
The thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation of the present invention mainly is made up of high frequency switch power part, bridge rectifier part, inversion part, control section; Wherein, The high frequency switch power part is made up of mains switch, bridge rectifier, filtering, high frequency carrier modulation inversion, high frequency transformer etc.; The 380v three-phase alternating current gets into three-phase bridge rectification from mains switch; Become 560v direct current stably behind the inductor filter of process filtering and the capacitor filtering, after the high frequency modulated inversion, send into high frequency transformer.
The thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation of the present invention, said bridge rectifier partly comprises the low pressure bridge rectifier, said low pressure bridge rectifier produces the two-way Rectified alternating current positive and negative to the center.
The thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation of the present invention, said inversion partly comprises continued flow resistance, inversion controllable silicon, adopts two cover inversion controllable silicon alternate conduction, switching-over adopts the prime Dead Time to turn-off synchronous triggering.
The thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation of the present invention; Said control section is made up of supply transformer, external control unit, main circuit board, power drives plate, inversion control plate, sampling shunt; Said supply transformer produces the alternating current that 24v four tunnel isolates each other; Through power drives plate, inversion control plate, drive two igbt and inversion controllable silicon, said main circuit board adopts the integrated amplifier ratio to amplify op07, LM324 controls mains switch; Sg3525 produces pulse signal, through distributing rear drive power drives plate and inversion control plate.
The present invention is mainly used in the pulse width modulated power supply of plating, electrolysis, electrochemistry etc.; Be mainly reflected in the breakthrough on the dipulse current power,, can reach several Wan An from existing hundreds of peace; And cost can reduce 5-6 doubly, makes common plating electrolysis also can realize functional application.
Description of drawings
Fig. 1 is a kind of circuit diagram of thyristor commutation dual-pulse power supply of high frequency switch power modulation;
Fig. 2 is a kind of control section circuit diagram of thyristor commutation dual-pulse power supply of high frequency switch power modulation;
Fig. 3 is a kind of triggering waveform sketch map of thyristor commutation dual-pulse power supply of high frequency switch power modulation;
Fig. 4 is a kind of functional-block diagram of thyristor commutation dual-pulse power supply of high frequency switch power modulation.
Wherein: 1, mains switch; 2, bridge rectifier; 3, filtering; 4, high frequency carrier modulation inversion; 5, high frequency transformer; 6, low pressure bridge rectifier; 7, continued flow resistance; 8, inversion controllable silicon; 9, sampling shunt; 10, supply transformer; 11, external control unit; 12, master control borad; 13, power drives plate; 14, inversion control plate; 15-21, waveform; 15, igbt pulse train G3; 16, igbt pulse train G4; 17, secondary triggering controllable silicon pulse G1; 18, secondary triggering controllable silicon pulse G2; 19, output voltage waveforms; 20, output current wave; 21, turn-off the dead band.
Embodiment
Be further described and set forth below in conjunction with the accompanying drawing specific embodiments of the invention:
The thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation of the present invention mainly is made up of high frequency switch power part, bridge rectifier part, inversion part, control section; Wherein, the high frequency switch power part is made up of mains switch 1, bridge rectifier 2, filtering 3, high frequency carrier modulation inversion 4, high frequency transformer 5 etc.The 380v three-phase alternating current gets into three-phase bridge rectification 2 from mains switch 1; Become 560v direct current stably behind the inductor filter of process filtering 3 and the capacitor filtering; The peak voltage that inductance, electric capacity and the inversion of RCD absorbing and filtering produce suppresses the interference to electrical network, improves power factor; Send into high frequency transformer 5 transformations after two igbt copped wave inversions of high frequency carrier modulation inversion 4; Igbt gate pole G3, G4 trigger igbt pulse train G3, igbt pulse train G4, and like waveform 15, waveform 16, to make high frequency transformer 5 can not produce flip-flop saturated for symmetrical 180 degree and capacitance; High frequency transformer 5 two ends are adopted capacitance-resistance to absorb and are prevented to produce and vibrate simultaneously, and the 560v direct current is sent into high frequency transformer 5 after the high frequency modulated inversion.
The thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation of the present invention; Wherein, Said bridge rectifier partly comprises low pressure bridge rectifier 6; Said low pressure bridge rectifier 6 produces the two-way Rectified alternating current positive and negative to the center, and said low pressure bridge rectifier 6 is because of the higher employing fast recovery diode of frequency, conducting electric current when continued flow resistance 7 provides zero load for fast recovery diode.
The thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation of the present invention, wherein, said inversion partly comprises continued flow resistance 7, inversion controllable silicon 8; Adopt two cover inversion controllable silicons, 8 alternate conduction, switching-over adopts the prime Dead Time to turn-off synchronous triggering; Like waveform 21, because the electric current during conducting is a dither, when particularly being transformed into the full conducting of an inversion controllable silicon 8; Inversion controllable silicon 8 turn-offs easily, thus to adopt the synchronous triggering high speed photo coupling, after high speed photo coupling is isolated amplification; The high-speed synchronous pulse-triggered; Measurement C1 in the pressure drop of E2, judges 8 short circuits of conducting simultaneously of two cover inversion controllable silicons, shutoff main circuit when pressure drop surpasses 3v in E1, C2 during conducting simultaneously.
The thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation of the present invention, wherein, said control section is made up of supply transformer 10, external control unit 11, main circuit board 12, power drives plate 13, inversion control plate 14, sampling shunt 9.
Said supply transformer 10 produces the alternating current that 24v four tunnel isolates each other, through power drives plate 13, inversion control plate 14, drives two igbt and inversion controllable silicon 8, will reach more than the 3000v so insulate, and will shield around one deck.
The amber light of said external control unit 11 is overtemperature protection when bright, and green light is the power supply indication, is error protection during Blink green, and the electric current and voltage regulator potentiometer can be changed the voltage stabilization and current stabilization operation, and ratio is regulated can regulate positive and negative impulse ratio.
Said main circuit board 12 adopts the integrated amplifier ratio to amplify control mains switches 1 such as op07, LM324, and Sg3525 produces pulse signal, through distributing rear drive power drives plate 13 and inversion control plate 14.
The effect of said power drives plate 13: the pulse signal of main circuit board 12 by the supply transformer supply power, adopts M57962 to drive igbt after light-coupled isolation, drives and triggers igbt pulse train G3, igbt pulse train G4, like waveform 15, waveform 16.
The effect of said inversion control plate 14: the pulse signal of main circuit board 12 is after light-coupled isolation; Power supply by the supply transformer supply; Amplify drive inverse controllable silicon 8 through triode; Secondary triggering controllable silicon pulse G1, secondary triggering controllable silicon pulse G2, like waveform 17, waveform 18, waveform 19 is an output voltage waveforms.
Waveform 20 is an output current wave, and higher because of frequency, through the capacity effect of electrolyte, actual current waveform is the positive back pulse of continuous low frequency of positive and negative pulsation.
As the further improvement of technique scheme, said high frequency switch power part without 8 inversions of inversion controllable silicon, can be exported the pulse voltage that can modulate low frequency.
As the further improvement of technique scheme, said inversion part can adopt the 8 staggered conductings of four the inversion controllable silicons in bridge-type diagonal angle when positive-negative power produces one road voltage.
As the further improvement of technique scheme, said control section also can adopt single-chip microcomputer to produce multiple pulse and control power supply.
Claims (6)
1. the thyristor commutation dual-pulse power supply of high frequency switch power modulation; Comprise high frequency switch power part, bridge rectifier part, inversion part, control section composition; It is characterized in that: said high frequency switch power part is made up of mains switch (1), bridge rectifier (2), filtering (3), high frequency carrier modulation inversion (4), high frequency transformer (5); The 380v three-phase alternating current gets into three-phase bridge rectification (2) from mains switch (1); Become 560v direct current stably behind the inductor filter of process filtering (3) and the capacitor filtering, after the high frequency modulated inversion, send into high frequency transformer (5).
2. the thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation according to claim 1, said bridge rectifier partly comprises low pressure bridge rectifier (6), adopts low pressure bridge rectifier (6) to produce the two-way Rectified alternating current positive and negative to the center.
3. the thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation according to claim 1; Said inversion partly comprises continued flow resistance (7), inversion controllable silicon (8); Two cover inversion controllable silicon (8) alternate conduction are partly adopted in said inversion; Switching-over adopts the prime Dead Time to turn-off synchronous triggering.
4. the thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation according to claim 1; Said control section is made up of supply transformer (10), external control unit (11), main circuit board (12), power drives plate (13), inversion control plate (14), sampling shunt (9); Said supply transformer (10) produces the alternating current that 24v four tunnel isolates each other; Through power drives plate (13), inversion control plate (14); Drive two igbt and inversion controllable silicon (8); Said main circuit board (12) adopts the integrated amplifier ratio to amplify op07, LM324 controls mains switch (1), and Sg3525 produces pulse signal, through distributing rear drive power drives plate (13) and inversion control plate (14).
5. the thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation according to claim 3, said inversion part can adopt four the inversion controllable silicons in bridge-type diagonal angle (8) conducting that interlocks when positive-negative power produces one road voltage.
6. the thyristor commutation dual-pulse power supply of a kind of high frequency switch power modulation according to claim 4, said control section also can adopt single-chip microcomputer to produce multiple pulse modulation power supply.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011104301593A CN102522914A (en) | 2011-12-07 | 2011-12-07 | Silicon controlled rectifier commutation dipulse power supply of high frequency switching power supply modulation |
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| CN2011104301593A CN102522914A (en) | 2011-12-07 | 2011-12-07 | Silicon controlled rectifier commutation dipulse power supply of high frequency switching power supply modulation |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102904477A (en) * | 2012-09-05 | 2013-01-30 | 盐城工学院 | Bidirectional pulse plating switch power source based on complex programmable logic device (CPLD) control |
| CN102916606A (en) * | 2012-10-16 | 2013-02-06 | 北京工业大学 | Novel AC pulse power supply device |
| CN104467511A (en) * | 2013-09-18 | 2015-03-25 | 杭州天明环保工程有限公司 | Pulsed power source device |
| CN104539174A (en) * | 2014-12-01 | 2015-04-22 | 中山市双核电气有限公司 | Electronic automatic reversing power supply based on N+1 superimposed backup |
| CN104539178A (en) * | 2014-12-01 | 2015-04-22 | 中山市双核电气有限公司 | Electronic automatic commutation power supply |
| CN106301256A (en) * | 2016-08-29 | 2017-01-04 | 江门市川琪科技有限公司 | A kind of audio power amplifier circuit of power invariability |
| CN109613847A (en) * | 2018-10-23 | 2019-04-12 | 昆山品钰康机电设备有限公司 | A kind of high-power plating switch power supply system of digital control master slave mode |
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| CN202818149U (en) * | 2011-12-07 | 2013-03-20 | 蒋文波 | High frequency switch power supply synthetic silicon controlled rectifier commutation double pulse power supply |
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| US6181079B1 (en) * | 1999-12-20 | 2001-01-30 | Philips Electronics North America Corporation | High power electronic ballast with an integrated magnetic component |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102904477A (en) * | 2012-09-05 | 2013-01-30 | 盐城工学院 | Bidirectional pulse plating switch power source based on complex programmable logic device (CPLD) control |
| CN102916606A (en) * | 2012-10-16 | 2013-02-06 | 北京工业大学 | Novel AC pulse power supply device |
| CN104467511A (en) * | 2013-09-18 | 2015-03-25 | 杭州天明环保工程有限公司 | Pulsed power source device |
| CN104539174A (en) * | 2014-12-01 | 2015-04-22 | 中山市双核电气有限公司 | Electronic automatic reversing power supply based on N+1 superimposed backup |
| CN104539178A (en) * | 2014-12-01 | 2015-04-22 | 中山市双核电气有限公司 | Electronic automatic commutation power supply |
| CN106301256A (en) * | 2016-08-29 | 2017-01-04 | 江门市川琪科技有限公司 | A kind of audio power amplifier circuit of power invariability |
| CN109613847A (en) * | 2018-10-23 | 2019-04-12 | 昆山品钰康机电设备有限公司 | A kind of high-power plating switch power supply system of digital control master slave mode |
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Application publication date: 20120627 |