CN102522378A - Distributed image high power tube core - Google Patents
Distributed image high power tube core Download PDFInfo
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- CN102522378A CN102522378A CN2011103857499A CN201110385749A CN102522378A CN 102522378 A CN102522378 A CN 102522378A CN 2011103857499 A CN2011103857499 A CN 2011103857499A CN 201110385749 A CN201110385749 A CN 201110385749A CN 102522378 A CN102522378 A CN 102522378A
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Abstract
The invention relates to a distributed image high power tube core, which comprises a substrate, high electron mobility transistor (HEMT) unit cells 1a, 1b, 1c and 1d, a power distribution network, a power synthesis network and a source strip grounding radiating through hole, wherein the HEMT unit cells 1a, 1b, 1c and 1d, the power distribution network, the power synthesis network and the source strip grounding radiating through hole are all arranged on the substrate, and source electrodes of the HEMT unit cells 1a, 1b, 1c and 1d are connected with the ground through the source strip grounding radiating through hole. The HEMT unit cells 1a, 1b, 1c and 1d are distributed on the substrate evenly and are further distributed and separated by adopting the source strip grounding through hole. The HEMT unit cell source electrodes are grounded well through the source strip grounding radiating through hole, good electric performance is achieved, and the tube core is separated evenly in the longitudinal direction by using the size of a power distribution/synthesis network simultaneously, therefore even distribution of heating sources is achieved, local hot spots are avoided, radiating uniformity of the tube core is greatly improved, and stability of devices under high power is guaranteed.
Description
Technical field
What the present invention relates to is a kind of high-power die, specifically, is the distributed mirror image high-power die of a kind of employing.
Background technology
Solid state microwave power device and monolithic integrated circuit are the core components and parts in the systems such as electronic countermeasures, phased array radar, precision strike, microwave communication and satellite aerospace; Because the particularity of its application background, solid state microwave power device and monolithic integrated circuit are the major fields of China being carried out blockade on new techniques and product embargo abroad always; And solid-state power amplifier chip conduct core components and parts have wherein received more strict control.Work at present C-band and with the high-performance solid state microwave power monolithic of super band mainly be based on GaAs two generation semiconductor device.The GaN material is as the semi-conductive main representative of three generations; Have remarkable advantages such as big energy gap, high saturated electron drift velocity and high breakdown field strength; European and American countries was seized the commanding elevation of military electronic technology competitively with GaN HEMT microwave power device and monolithic integrated circuit thereof the emphasis as the military electronic devices development in recent years.
The forties in 20th century western countries such as U.S. solid-state monolithic integrated microwave circuit (MMIC) that begins one's study, first generation semi-conducting material is Si/GeSi, second generation semi-conducting material is GaAs, InP, third generation semi-conducting material is GaN, SiC.No matter be to adopt which kind of semi-conducting material, the grid width of final stage tube core has determined the power output of amplifier when making power amplifier, and the prime tube core mainly plays gain and amplifies, drives.Traditional amplifier all adopt single-row vertical distribution (perpendicular to side signal transmission to), as shown in Figure 1.For the power output that improves the power amplifier chip as much as possible often requires to increase final stage grid width.Be exactly total singly refer to the total grid width of grid exponential quantity that grid width multiply by, shown in Figure 2 is 6 traditional finger HEMT structure cells.A3 is a grounding through hole, and A4 is a signal input part, and A5 is a signal output part.Refer to that singly grid width A1 receives the restriction of frequency, frequency is high more, requires to refer to that singly grid width is more little.Therefore, the increase of final stage grid width often can only rely on the increase grid to refer to A2 quantity, and this just requires the longitudinal size of chip to strengthen.The longitudinal size of starting from the consideration chip of practical application can not be greater than half-wavelength, and therefore single chip power output is restricted.For the requirement that reaches power output often need be synthesized many chips, overall dimensions strengthens, efficient reduces, and has strengthened circuit complexity; Simultaneously, the thermal source that single-row grid width strengthens in the middle of the device of back is more concentrated, influences chip reliability.
Summary of the invention
Goal of the invention: the objective of the invention is to break through the limited influence of chip tradition grid width through distributing mirror image tube core layout designs; When increasing substantially the single-chip power output pyrotoxin is evenly disperseed; Improve the heat radiation uniformity of entire chip, improve the thermal stability of chip greatly.
Technical scheme: the present invention adopts following technological means to realize:
A kind of distributing mirror image high-power die; Said tube core comprises substrate, HEMT structure cell 1a, 1b, 1c, 1d, power distributing network, power comprise network and source bar ground connection heat radiation through hole; Said HEMT structure cell 1a, 1b, 1c, 1d, power distributing network, power comprise network and source bar ground connection heat radiation through hole all are arranged on the substrate; And the source electrode of described HEMT structure cell 1a, 1b, 1c, 1d is through source bar ground connection heat radiation through hole ground connection; Said HEMT structure cell 1a, 1b, 1c, 1d evenly distribute on substrate, and the source of employing bar grounding through hole further disperses the HEMT structure cell to isolate.
Be the mirror image symmetrical distribution between said HEMT structure cell 1a and the HEMT structure cell 1c and between HEMT structure cell 1b and the HEMT structure cell 1d, reach between said HEMT structure cell 1a and the HEMT structure cell 1b between HEMT structure cell 1c and the HEMT structure cell 1d and be parallelly connected in the same way distribution.
Said power distributing network is connected with the input of power HEMT structure cell 1a, 1b, 1c, 1d and in the left side of power distributing network total input is set, and said power comprise network is connected with the output of power HEMT structure cell 1a, 1b, 1c, 1d and on the right side of power distributing network total output is set.
The field-effect transistor FET quantity that each HEMT structure cell 1a, 1b, 1c, 1d comprise is 2～8.
Said HEMT structure cell is provided with 2～4 row on substrate.
Said power distributing network adopts a type wilkinson power distributing network, and said power comprise network adopts a type wilkinson power comprise network.
Said baseplate material is GaAs (GaAs) or gallium nitride (GaN) or carborundum (SiC).
Beneficial effect: the present invention realizes HEMT structure cell source electrode good earth through source bar ground connection heat radiation through hole, realizes good electrical properties; One side on the heat dispersion places tube core through the through hole that dispels the heat source bar ground connection in the middle of, evenly separate tube core in the horizontal direction; Utilize the size of power division/comprise network vertically evenly separating tube core simultaneously, thereby realize evenly distributing all pyrotoxins, avoided local hot spot, improved the heat radiation uniformity of tube core greatly, guarantee the stability under the device high power.
Description of drawings
Fig. 1 is a traditional conventional power HEMT tube core schematic layout pattern;
Fig. 2 is the sketch map of HEMT structure cell;
Fig. 3 is a principle of the invention sketch map;
Fig. 4 is the sketch map that the present invention adopts the synthetic design of biserial tube core octuple;
Fig. 5 is the sketch map that the present invention adopts the ten six tunnel synthetic designs of biserial tube core;
Fig. 6 is the sketch map that the present invention adopts the synthetic design of four column of die octuples;
Fig. 7 is the sketch map that the present invention adopts the ten six tunnel synthetic designs of four column of die.
Embodiment
Below in conjunction with Figure of description the present invention is further detailed:
The present invention relates to a kind of distributing mirror image high-power die, comprise substrate, HEMT structure cell 1a, 1b, 1c, 1d; Power distributing network 2; Power comprise network 3 and source bar ground connection heat radiation through hole 4, said HEMT structure cell 1a, 1b, 1c, 1d; Power distributing network 2; Power comprise network 3 and source bar ground connection heat radiation through hole 4 all are arranged on the substrate; And the source electrode of described HEMT structure cell 1a, 1b, 1c, 1d is through source bar ground connection heat radiation through hole ground connection; Said HEMT structure cell 1a, 1b, 1c, 1d evenly distribute on substrate, and the source of employing bar grounding through hole further disperses the HEMT structure cell to isolate.Be symmetrically distributed for mirror image between said HEMT structure cell 1a and the HEMT structure cell 1c and between HEMT structure cell 1b and the HEMT structure cell 1d; Be parallelly connected in the same way distribution between said HEMT structure cell 1a and the HEMT structure cell 1b and between HEMT structure cell 1c and the HEMT structure cell 1d; Said power distributing network is connected with the input of power HEMT structure cell 1a, 1b, 1c, 1d and in the left side of power distributing network 2 total input is set; Said power comprise network is connected with the output of power HEMT structure cell 1a, 1b, 1c, 1d and on the right side of power distributing network total output is set; The field-effect transistor FET quantity that each HEMT structure cell 1a, 1b, 1c, 1d comprise is 2～8, and said HEMT structure cell is provided with 2～4 row on substrate.Said baseplate material includes but not limited to GaAs (GaAs), gallium nitride (GaN), carborundum (SiC).
Utilize concrete example to come embodiment of the present invention is detailed below:
Embodiment one:
Fig. 3 is the synthetic design of a biserial tube core octuple of embodiments of the invention.Wherein 1a, 1b, 1c, 1d are the HEMT structure cell, and each structure cell comprises 6 FET; Adopt source bar through hole 4 to isolate between each structure cell, when realizing the HEMT source ground, pyrotoxin is evenly separated, heat concentrations in the middle of avoiding. HEMT structure cell 1a, 1b arrange in the same way, and HEMT structure cell 1c, 1d arrange in the same way, and HEMT structure cell 1a, 1c mirror image are symmetrically distributed, and HEMT structure cell 1b, 1d mirror image are symmetrically distributed.Simultaneously, HEMT structure cell 1a, 1b, 1c, 1d are that benchmark is the mirror image symmetrical distribution with HEMT structure cell 1a ', 1b ', 1c ', 1d ' with the center line in scheming as a whole.2 is microwave signal input Power Distribution network among the figure, and microwave signal is assigned to each structure cell uniformly.Among the figure 3 is the power comprise network, mainly is to be synthesized to one the tunnel to the output signal of each HEMT structure cell, is convenient to be connected with follow-up matching network.See side signal transmission on the whole to being the input from the left side, export on the right, consistent with traditional tube core, satisfies the power chip designing requirement.The present invention can be through just tube core is carried out after the simple image copying can be so that total grid width doubles, and is as shown in Figure 4.Fig. 4 is the synthetic design of the biserial tube core ten six tunnel of embodiments of the invention, and whole figure is to be benchmark mirror image each other with the center line in scheming.The same with Fig. 3, whole figure still keeps left side input, and the right output meets the power chip designing requirement.
Embodiment two:
Fig. 5 is the synthetic design of one four column of die octuple of the embodiment of the invention.This embodiment has adopted four column of die layout designs, on the chip longitudinal size, is dwindling half under the prerequisite of identical grid width; Identical chip longitudinal size can improve the power output of single chip greatly so that total grid width doubles.1a～1h among the figure is the HEMT structure cell.HEMT structure cell 1a～1d wherein arranges in the same way; HEMT structure cell 1e～1h arranges in the same way; HEMT structure cell 1a and HEMT structure cell 1e be mirror each other; HEMT structure cell 1b and HEMT structure cell 1f be mirror each other, and HEMT structure cell 1c and HEMT structure cell 1g be mirror each other, and HEMT structure cell 1d and HEMT structure cell 1h be mirror each other.Among the figure 2 is the input Power Distribution network, and the microwave signal mean allocation is arrived each HEMT structure cell.Among the figure 3 is the power comprise network, and its function mainly is that the output signal with each HEMT structure cell is synthesized to one the tunnel, is convenient to be connected with follow-up match circuit; Can also realize simultaneously the even feed of HEMT structure cell drain voltage.Among the figure 4 is source bar through hole, when realizing the HEMT source ground, pyrotoxin evenly separated heat concentrations in the middle of avoiding.Figure among Fig. 5 is carried out just can total grid width being doubled after the simple image copying, as shown in Figure 6.Fig. 6 is one four column of die, the ten six tunnel synthetic designs of the embodiment of the invention.
Claims (7)
1. distributing mirror image high-power die; It is characterized in that: said tube core comprises substrate, HEMT structure cell (1a, 1b, 1c, 1d), power distributing network (2), power comprise network (3) and source bar ground connection heat radiation through hole (4); Said HEMT structure cell (1a, 1b, 1c, 1d), power distributing network (2), power comprise network (3) and source bar ground connection heat radiation through hole (4) all are arranged on the substrate; And the source electrode of described HEMT structure cell (1a, 1b, 1c, 1d) is through source bar ground connection heat radiation through hole (4) ground connection; Said HEMT structure cell (1a, 1b, 1c, 1d) evenly distributes on substrate, and adopts source bar grounding through hole (4) that the HEMT structure cell is further disperseed to isolate.
2. distributing high-power die as claimed in claim 1; It is characterized in that: be the mirror image symmetrical distribution between said HEMT structure cell (1a) and the HEMT structure cell (1c) and between HEMT structure cell (1b) and the HEMT structure cell (1d), reach between said HEMT structure cell (1a) and the HEMT structure cell (1b) between HEMT structure cell (1c) and the HEMT structure cell (1d) and be parallelly connected in the same way distribution.
3. distributing high-power die as claimed in claim 1; It is characterized in that: said power distributing network (2) is connected with the input of power HEMT structure cell (1a, 1b, 1c, 1d) and in the left side of power distributing network (2) total input is set, and said power comprise network (3) is connected with the output of power HEMT structure cell (1a, 1b, 1c, 1d) and on the right side of power distributing network (3) total output is set.
4. distributing high-power die as claimed in claim 1 is characterized in that: the field-effect transistor FET quantity that each HEMT structure cell (1a, 1b, 1c, 1d) comprises is 2～8.
5. distributing high-power die as claimed in claim 1 is characterized in that: said HEMT structure cell is provided with 2～4 row on substrate.
6. distributing high-power die as claimed in claim 1 is characterized in that: said power distributing network (2) adopts a type wilkinson power distributing network, and said power comprise network (3) adopts a type wilkinson power comprise network.
7. distributing high-power die as claimed in claim 1 is characterized in that: said baseplate material is GaAs (GaAs) or gallium nitride (GaN) or carborundum (SiC).
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011103857499A CN102522378A (en) | 2011-11-29 | 2011-11-29 | Distributed image high power tube core |
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| CN2011103857499A CN102522378A (en) | 2011-11-29 | 2011-11-29 | Distributed image high power tube core |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700696A (en) * | 2013-12-24 | 2014-04-02 | 中国电子科技集团公司第五十五研究所 | Uniformly radiating GaN tube core adopting tube series connection structure |
| CN108736844A (en) * | 2018-08-17 | 2018-11-02 | 成都航天科工微电子系统研究院有限公司 | A kind of quasi- single-chip integration gallium nitride high power amplifier and assemble method |
| CN109390396A (en) * | 2013-08-21 | 2019-02-26 | 晶元光电股份有限公司 | High electron mobility transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040164407A1 (en) * | 2003-02-25 | 2004-08-26 | Akishige Nakajima | Semiconductor device, power amplifier device and PC card |
| CN2845416Y (en) * | 2005-11-23 | 2006-12-06 | 威盛电子股份有限公司 | Electronic system |
| CN102170269A (en) * | 2011-04-29 | 2011-08-31 | 中兴通讯股份有限公司 | Power amplification device and power amplification circuit |
-
2011
- 2011-11-29 CN CN2011103857499A patent/CN102522378A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040164407A1 (en) * | 2003-02-25 | 2004-08-26 | Akishige Nakajima | Semiconductor device, power amplifier device and PC card |
| CN2845416Y (en) * | 2005-11-23 | 2006-12-06 | 威盛电子股份有限公司 | Electronic system |
| CN102170269A (en) * | 2011-04-29 | 2011-08-31 | 中兴通讯股份有限公司 | Power amplification device and power amplification circuit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390396A (en) * | 2013-08-21 | 2019-02-26 | 晶元光电股份有限公司 | High electron mobility transistor |
| CN103700696A (en) * | 2013-12-24 | 2014-04-02 | 中国电子科技集团公司第五十五研究所 | Uniformly radiating GaN tube core adopting tube series connection structure |
| CN108736844A (en) * | 2018-08-17 | 2018-11-02 | 成都航天科工微电子系统研究院有限公司 | A kind of quasi- single-chip integration gallium nitride high power amplifier and assemble method |
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Application publication date: 20120627 |