CN102522291A - Plasma display panel and production method thereof - Google Patents
Plasma display panel and production method thereof Download PDFInfo
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- CN102522291A CN102522291A CN2011104578642A CN201110457864A CN102522291A CN 102522291 A CN102522291 A CN 102522291A CN 2011104578642 A CN2011104578642 A CN 2011104578642A CN 201110457864 A CN201110457864 A CN 201110457864A CN 102522291 A CN102522291 A CN 102522291A
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Abstract
The invention provides a plasma display panel and a production method thereof. The plasma display panel comprises a first substrate, a second substrate, an addressing electrode, a first dielectric insulating layer, a bus electrode, a second dielectric insulating layer and a barrier. The first substrate and the second substrate are in opposite and hermetically connected together, the addressing electrode is arranged on one side, facing the first substrate, of the second substrate, the first dielectric insulating layer covers the addressing electrode, the bus electrode is arranged on one side, facing the first substrate, of the first dielectric insulating layer, the second dielectric insulating layer covers the bus electrode, and the barrier is arranged on one side, facing the first substrate, of the second dielectric insulating layer and covered by the first substrate. The plasma display panel needs no production of transparent electrodes and shading electrode structures, and is simple in structure and production method as compared with the plasma display panels in the prior art.
Description
Technical field
The present invention relates to plasma Display Technique field, in particular to a kind of plasma panel and preparation method thereof.
Background technology
General AC gas discharge display screen adopts the surface discharge type structure.Like accompanying drawing 1, show the structural representation of a kind of alternating current gas discharge plasma display screen of the prior art, this display screen comprises upper substrate 1 ' and the infrabasal plate 7 ' of sealing with it.Upper substrate 1 ' is provided with transparency electrode (ITO) 2 ' and bus electrode 3 ' and the secret note 12 ' that increases contrast; Transparency electrode 2 ' constitutes sparking electrode with bus electrode 3 '; All cover one deck dielectric layer 4 ' on upper substrate 1 ' and the surface that is positioned at the sparking electrode on the upper substrate 1 ', go up at dielectric layer 4 ' and cover one deck medium protective layer 5 '.Infrabasal plate 7 ' comprises that setting and the addressing electrode 8 ' vertical with sparking electrode above that; Cover the dielectric layer 6 ' of addressing electrode 8 '; And be positioned at the barrier 9 ' that certain altitude was gone up and had to dielectric layer 6 '; Barrier 9 ' separates discharge space, has formed the fluorescent material groove 10 ' parallel with addressing electrode 8 ', is coated with phosphor powder layer 11 ' in the bottom of fluorescent material groove 10 '.Charge into inert mixed gas such as Ne, Ar, Xe after upper substrate 1 ' and infrabasal plate 7 ' sealed with glass powder with low melting point, energising afterwards makes electrode discharge.
Summary of the invention
The present invention aims to provide a kind of plasma panel simple in structure and preparation method thereof.
To achieve these goals, according to an aspect of the present invention, a kind of plasma panel is provided, has comprised: first substrate; Second substrate is relatively arranged and is sealed with first substrate; Addressing electrode is arranged on the side of second substrate towards first substrate; First dielectric insulation layer covers on the addressing electrode; Bus electrode is arranged on the side of first dielectric insulation layer towards first substrate; Second dielectric insulation layer covers on the bus electrode; And barrier, be arranged on the side of second dielectric insulation layer, and cover by first substrate towards first substrate.
Further, addressing electrode and barrier laterally arrange, and bus electrode is vertical with addressing electrode to be provided with.
Further, also be provided with protective film, be provided with phosphor powder layer in the bottom of protective film on the surface of barrier.
According to a further aspect in the invention, a kind of manufacture method of plasma panel is provided, has may further comprise the steps: made first substrate; Make second substrate, make addressing electrode on the surface of second substrate, one side; Form first dielectric insulation layer in the addressing electrode surface-coated; Surface at first dielectric insulation layer makes bus electrode; Form second dielectric insulation layer in the bus electrode surface-coated; Surface at second dielectric insulation layer makes barrier; And first substrate covered on the barrier, and seal with second substrate.
Further, after the step of making barrier, further comprising the steps of: the surface at barrier forms protective film.
Further, forming thickness through vapor deposition is the protective film of 800nm, and the material of protective film is a magnesia.
Further, make addressing electrode through photoetching process.
Further, first dielectric insulation layer and second dielectric insulation layer all form through the step that applies slurry, drying and sintering.
Further, before the step with first substrate and the second substrate sealing-in, further comprising the steps of: in the elongate slots that barrier forms, fill phosphor mixture, phosphor mixture is the mixture of fluorescent material and magnesia crystal.
Further, before the step with first substrate and the second substrate sealing-in, further comprising the steps of: the side direction edge at second substrate forms the sealing-in frame, forms the sealing-in frame through coating, drying and sintering.
In technical scheme of the present invention, plasma panel comprises: first substrate, second substrate, addressing electrode, first dielectric insulation layer, bus electrode, second dielectric insulation layer and barrier.Wherein, second substrate and the first substrate sealing-in, addressing electrode, first dielectric insulation layer, bus electrode, second dielectric insulation layer and barrier all are arranged on second substrate, and particularly, addressing electrode is arranged on the side of second substrate towards first substrate; First dielectric insulation layer covers on the addressing electrode; Bus electrode is arranged on the side of first dielectric insulation layer towards first substrate; Second dielectric insulation layer covers on the bus electrode; Barrier is arranged on the side of second dielectric insulation layer towards first substrate.
Need not of plasma panel of the present invention prepares transparency electrode and shading electrode structure, and simple in structure than the plasma panel of prior art, the principle of luminosity of plasma panel of the present invention is following:
At first, in the luminous unit of needs, carry out one time weak discharge, the corresponding wall electric charge of accumulation in corresponding discharge cell through addressing electrode and bus electrode in address period; Then in sweep time; Need the corresponding bus electrode in luminous unit to discharge, the cumulative function of wall electric charge before adding, thus electric field strength can produce energy level transition emissioning light by excited inert gas; The vacuum-ultraviolet light excitated fluorescent powder, thus the three primary colors visible light produced.Compare with the luminescence unit of prior art, difference is that addressing and scanning discharge process all carry out at the second substrate picture surface.
Description of drawings
The Figure of description that constitutes the application's a part is used to provide further understanding of the present invention, and illustrative examples of the present invention and explanation thereof are used to explain the present invention, do not constitute improper qualification of the present invention.In the accompanying drawings:
Fig. 1 shows the structural representation of the plasma panel of prior art;
Fig. 2 shows the structural representation according to the embodiment of plasma panel of the present invention; And
Fig. 3 shows the schematic flow sheet according to the embodiment of the manufacture method of plasma panel of the present invention.
Embodiment
Need to prove that under the situation of not conflicting, embodiment and the characteristic among the embodiment among the application can make up each other.Below with reference to accompanying drawing and combine embodiment to specify the present invention.
As shown in Figure 2, the plasma panel of present embodiment comprises: first substrate 1, second substrate 2, addressing electrode 3, first dielectric insulation layer 4, bus electrode 5, second dielectric insulation layer 6 and barrier 7.Second substrate 2 and first substrate 1 are relatively arranged and are sealed; Addressing electrode 3 is arranged on the side of second substrate 2 towards first substrate 1; First dielectric insulation layer 4 covers on the addressing electrode 3; Bus electrode 5 is arranged on the side of first dielectric insulation layer 4 towards first substrate 1; Second dielectric insulation layer 6 covers on the bus electrode 5; Barrier 7 is arranged on the side of second dielectric insulation layer 6 towards first substrate 1, and is covered by first substrate 1.Addressing electrode 3 laterally arranges with barrier 7, and, bus electrode 5 and addressing electrode 3 vertical settings.
Need not of the plasma panel of present embodiment prepares transparency electrode and shading electrode structure (being generally secret note), and simple in structure than the plasma panel of prior art, the principle of luminosity of the plasma panel of present embodiment is following:
At first, in the luminous unit of needs, carry out one time weak discharge, the corresponding wall electric charge of accumulation in corresponding discharge cell through addressing electrode 3 and bus electrode 5 in address period; Then in sweep time; Need the corresponding bus electrode 5 in luminous unit to discharge, the cumulative function of wall electric charge before adding, thus electric field strength can produce energy level transition emissioning light by excited inert gas; The vacuum-ultraviolet light excitated fluorescent powder, thus the three primary colors visible light produced.Compare with the luminescence unit of prior art, difference is that addressing and scanning discharge process all carry out at second substrate, 2 picture surfaces.
It should be noted that; Because the addressing of present embodiment is all carried out at second substrate, 2 picture surfaces with the scanning discharge process; Therefore first and second layers of dielectric insulation layer thickness will change to some extent in corresponding first and second layers of dielectric insulation layer thickness and the prior art, and the sintering shrinkage rates that two layer medium also need be complementary takes place at second substrate surface owing to discharge process simultaneously; In order to improve 7 pairs of visible reflection of lights of second dielectric insulation layer 6 and barrier; Surface at barrier 7 also is provided with protective film, preferably uses magnesia (MgO), is provided with phosphor powder layer in the bottom of protective film.Protective film is carried out vapor deposition and is formed behind the barrier 7 that completes, improve the addressing response speed in order to improve secondary electron yield accordingly, in fluorescent material, adds the MgO microcrystal grain.
As shown in Figure 3, the manufacture method of the plasma panel of present embodiment may further comprise the steps:
S10: make first substrate 1.
S20: make second substrate 2.
S30: the surface in second substrate, 2 one sides makes addressing electrode 3.Preferably, make addressing electrode 3 through photoetching process.
S40: form first dielectric insulation layer 4 in addressing electrode 3 surface-coated.Preferably, first dielectric insulation layer 4 can form through the step that applies slurry, drying and sintering.
S50: the surface at first dielectric insulation layer 4 makes bus electrode 5.
S60: form second dielectric insulation layer 6 in bus electrode 3 surface-coated.Preferably, second dielectric insulation layer 6 can form through the step that applies slurry, drying and sintering.
S70: the surface at second dielectric insulation layer 6 makes barrier 7.
S80: first substrate 1 is covered on the barrier, and seal with second substrate 2.Preferably, form the sealing-in frame at the side direction edge of second substrate 2, form the sealing-in frame through coating, drying and sintering, first substrate 1 and second substrate 2 carry out sealing-in through this sealing-in frame.
Preferably, after the step of making barrier 7, further comprising the steps of: the surface at barrier 7 forms protective film.
According to the manufacture method of claim 5, forming thickness through vapor deposition is the protective film of 800nm, and the material of protective film is a magnesia.Protective film can improve second dielectric insulation layer 6 and 7 pairs of visible reflection of lights of barrier.
Preferably, before the step with first substrate 1 and 2 sealing-ins of second substrate, further comprising the steps of: in the elongate slots that barrier 7 forms, fill phosphor mixture, phosphor mixture is the mixture of fluorescent material and magnesia crystal.Improve the addressing response speed in order to improve secondary electron yield, in fluorescent material, add the MgO microcrystal grain.
Manufacture method according to above-mentioned plasma panel of the present invention is made 50 cun HD specifications, and resolution is the plasma panel of 1366*768, and concrete steps are following:
Make prebasal plate earlier, choose the high ultra-thin glass of transmitance (thickness is about 1 μ m).
Make metacoxal plate again:
Earlier make addressing ADD electrode pattern on photoetching process at the back glass substrate.---------drying is developed printing addressing electrode Ag slurry on glass substrate---sintering---formation addressing ADD electrode to have the mask plate exposure of electrode pattern.Wherein addressing electrode will be corresponding to the barrier groove position that fluorescent material is housed.
After the ADD electrode completes, make dielectric insulation layer.---dry, sintering---forms dielectric insulation layer at ADD electrode surface coated media insulating barrier slurry.
------the required slurry drying of printing bus electrode on dielectric layer surface, back develops---sintering---formation bus electrode to have the mask plate exposure of electrode pattern.
After bus electrode completes, make dielectric insulation layer.---dry, sintering---forms dielectric insulation layer at bus electrode surface-coated dielectric insulation layer slurry.
Apply barrier size-drying-sintering-be coated with PR glue-line-drying-exposure-development-etching formation barrier figure at dielectric insulation layer,
Form protective film (MgO or other composite materials) the figure layer that thickness is 800nm on the barrier surface through vapor deposition.
In barrier, fill fluorescent material-drying, wherein mix diaphragm microcrystal grain (MgO crystal) in the fluorescent material.
Again infrabasal plate is carried out sealing-in frame coating-drying-sintering, accomplish metacoxal plate and make.Wherein the sealing-in frame material uses the low glass powder material of no Pb.
Through involutory sealing-in exhaust, the plasma panel structure fabrication is accomplished again.
The above is merely the preferred embodiments of the present invention, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a plasma panel is characterized in that, comprising:
First substrate (1);
Second substrate (2) is relatively arranged and is sealed with said first substrate (1);
Addressing electrode (3) is arranged on the side of said second substrate (2) towards said first substrate (1);
First dielectric insulation layer (4) covers on the said addressing electrode (3);
Bus electrode (5) is arranged on the side of said first dielectric insulation layer (4) towards said first substrate (1);
Second dielectric insulation layer (6) covers on the said bus electrode (5); And
Barrier (7) is arranged on the side of said second dielectric insulation layer (6) towards said first substrate (1), and is covered by said first substrate (1).
2. plasma panel according to claim 1 is characterized in that, said addressing electrode (3) and said barrier (7) laterally arrange, and, said bus electrode (5) and the vertical setting of said addressing electrode (3).
3. plasma panel according to claim 1 is characterized in that, also is provided with protective film on the surface of said barrier (7), is provided with phosphor powder layer in the bottom of said protective film.
4. the manufacture method of a plasma panel is characterized in that, may further comprise the steps:
Make first substrate (1);
Make second substrate (2),
Surface in said second substrate (2) one sides makes addressing electrode (3);
Form first dielectric insulation layer (4) in said addressing electrode (3) surface-coated;
Surface at said first dielectric insulation layer (4) makes bus electrode (5);
Form second dielectric insulation layer (6) in said bus electrode (3) surface-coated;
Surface at said second dielectric insulation layer (6) makes barrier (7); And
Said first substrate (1) is covered on the said barrier (7), and seal with said second substrate (2).
5. manufacture method according to claim 4 is characterized in that, and is after the step of making barrier (7), further comprising the steps of:
Surface at said barrier (7) forms protective film.
6. manufacture method according to claim 5 is characterized in that, forming thickness through vapor deposition is the said protective film of 800nm, and the material of said protective film is a magnesia.
7. manufacture method according to claim 5 is characterized in that, makes said addressing electrode (3) through photoetching process.
8. manufacture method according to claim 5 is characterized in that, said first dielectric insulation layer (4) and said second dielectric insulation layer (6) all form through the step that applies slurry, drying and sintering.
9. manufacture method according to claim 5 is characterized in that, and is before the step with said first substrate (1) and said second substrate (2) sealing-in, further comprising the steps of:
In the elongate slots that said barrier (7) forms, fill phosphor mixture, said phosphor mixture is the mixture of fluorescent material and magnesia crystal.
10. manufacture method according to claim 5 is characterized in that, and is before the step with said first substrate (1) and said second substrate (2) sealing-in, further comprising the steps of:
Side direction edge at said second substrate (2) forms the sealing-in frame, forms said sealing-in frame through coating, drying and sintering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110457864.2A CN102522291B (en) | 2011-12-31 | 2011-12-31 | Plasma display panel and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110457864.2A CN102522291B (en) | 2011-12-31 | 2011-12-31 | Plasma display panel and production method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102522291A true CN102522291A (en) | 2012-06-27 |
| CN102522291B CN102522291B (en) | 2015-04-01 |
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| CN201110457864.2A Expired - Fee Related CN102522291B (en) | 2011-12-31 | 2011-12-31 | Plasma display panel and production method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6501447B1 (en) * | 1999-03-16 | 2002-12-31 | Lg Electronics Inc. | Plasma display panel employing radio frequency and method of driving the same |
| CN1799115A (en) * | 2003-06-05 | 2006-07-05 | 松下电器产业株式会社 | Plasma display panel |
| CN1822291A (en) * | 2005-02-16 | 2006-08-23 | 三星Sdi株式会社 | Plasma display panel and method for forming the same |
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2011
- 2011-12-31 CN CN201110457864.2A patent/CN102522291B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6501447B1 (en) * | 1999-03-16 | 2002-12-31 | Lg Electronics Inc. | Plasma display panel employing radio frequency and method of driving the same |
| CN1799115A (en) * | 2003-06-05 | 2006-07-05 | 松下电器产业株式会社 | Plasma display panel |
| CN1822291A (en) * | 2005-02-16 | 2006-08-23 | 三星Sdi株式会社 | Plasma display panel and method for forming the same |
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| Publication number | Publication date |
|---|---|
| CN102522291B (en) | 2015-04-01 |
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