CN102508749B - Method for testing dual inline memory modules (DIMM) - Google Patents
Method for testing dual inline memory modules (DIMM) Download PDFInfo
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- CN102508749B CN102508749B CN 201110318440 CN201110318440A CN102508749B CN 102508749 B CN102508749 B CN 102508749B CN 201110318440 CN201110318440 CN 201110318440 CN 201110318440 A CN201110318440 A CN 201110318440A CN 102508749 B CN102508749 B CN 102508749B
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- 238000012360 testing method Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 14
- 230000009977 dual effect Effects 0.000 title claims abstract description 9
- 238000012795 verification Methods 0.000 claims abstract description 8
- 239000011159 matrix material Substances 0.000 claims description 6
- 230000003139 buffering effect Effects 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010998 test method Methods 0.000 description 2
- 238000012356 Product development Methods 0.000 description 1
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CN 201110318440 CN102508749B (en) | 2011-10-19 | 2011-10-19 | Method for testing dual inline memory modules (DIMM) |
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CN 201110318440 CN102508749B (en) | 2011-10-19 | 2011-10-19 | Method for testing dual inline memory modules (DIMM) |
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CN102508749A CN102508749A (en) | 2012-06-20 |
CN102508749B true CN102508749B (en) | 2013-08-14 |
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CN117636946A (en) * | 2022-08-09 | 2024-03-01 | 芯动微电子科技(珠海)有限公司 | High-bandwidth DDR dual inline memory module, memory system and operation method thereof |
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CN1249589C (en) * | 2000-09-06 | 2006-04-05 | 华硕电脑股份有限公司 | DIMM chip group control circuit |
CN1282098C (en) * | 2000-09-06 | 2006-10-25 | 华硕电脑股份有限公司 | DIMM chip set controlling circuit |
US20050195629A1 (en) * | 2004-03-02 | 2005-09-08 | Leddige Michael W. | Interchangeable connection arrays for double-sided memory module placement |
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Effective date of registration: 20180806 Address after: 250100 S06 tower, 1036, Chao Lu Road, hi tech Zone, Ji'nan, Shandong. Patentee after: SHANDONG LANGCHAO YUNTOU INFORMATION TECHNOLOGY Co.,Ltd. Address before: 250014 1036 Shun Ya Road, hi tech Zone, Ji'nan, Shandong. Patentee before: INSPUR GROUP Co.,Ltd. |
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Address after: 250100 No. 1036 Tidal Road, Jinan High-tech Zone, Shandong Province, S01 Building, Tidal Science Park Patentee after: Inspur cloud Information Technology Co.,Ltd. Address before: 250100 Ji'nan science and technology zone, Shandong high tide Road, No. 1036 wave of science and Technology Park, building S06 Patentee before: SHANDONG LANGCHAO YUNTOU INFORMATION TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20221018 Address after: 2107, 2108, Floor 21, Huaxin International Business Building, No. 28 Changjiang Road, Yantai District, China (Shandong) Free Trade Pilot Zone, 264000, Shandong Patentee after: Yantai Inspur Cloud Computing Co.,Ltd. Address before: 250100 No. 1036 Tidal Road, Jinan High-tech Zone, Shandong Province, S01 Building, Tidal Science Park Patentee before: Inspur cloud Information Technology Co.,Ltd. |