CN102496652A - Preparation method for ultraviolet-proof thin-film solar cell - Google Patents

Preparation method for ultraviolet-proof thin-film solar cell Download PDF

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Publication number
CN102496652A
CN102496652A CN2011104222159A CN201110422215A CN102496652A CN 102496652 A CN102496652 A CN 102496652A CN 2011104222159 A CN2011104222159 A CN 2011104222159A CN 201110422215 A CN201110422215 A CN 201110422215A CN 102496652 A CN102496652 A CN 102496652A
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nano
preparation
thin
film solar
silicon
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吴爱民
林国强
谭毅
李佳艳
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Changzhou Institute Co Ltd Of Daian University Of Technology
Dalian University of Technology
Changzhou Institute of Dalian University of Technology
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Changzhou Institute Co Ltd Of Daian University Of Technology
Dalian University of Technology
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention belongs to the technical field of thin-film solar cell preparation process. A preparation method for an ultraviolet-proof nano-crystalline silicon thin-film solar cell includes that, for transparent materials, an amorphous silicon film is directly settled before nano-crystalline silicon is prepared by the plasma etching technique; for opaque materials, the amorphous silicon film is settled after each layer is prepared according to conventional thin-film solar cell preparation process, then the nano-crystalline silicon is prepared by means of the plasma etching technique; and finally the ultraviolet-proof thin-film solar cell is prepared. The method is simple and easily controllable in process and low in cost, ultraviolet rays irradiated on the surface of the cell can be converted into light waves which can be absorbed by the cell by means of the photoluminescence effect of the nano-crystalline silicon, and thereby the service life of the cell is prolonged while utilization of sunlight ultraviolet band by the cell can be expanded to improve conversion efficiency of the cell.

Description

A kind of preparation method of thin-film solar cells of antiultraviolet
Technical field
The invention belongs to the thin-film solar cells preparation field, particularly prevent the preparation method of the thin-film solar cells of ultraviolet ray influence.。
Background technology
Along with human society carbon emission amount increases and conventional energy resource exhaustion day by day day by day, greatly developing new forms of energy and energy-conserving and environment-protective industry has become the only way that the social sustainable development and the civilization of marching toward are realized in countries in the world.Photovoltaic industry is one of new forms of energy industry at present with fastest developing speed in the world, and solar energy power generating has obtained development rapidly in recent years owing to do not receive the restriction of energy resources, raw material and applied environment.The nearest 5 years average annual growth rate of China's photovoltaic industry reaches more than 40%.China's solar cell yield was 9300MW in 2009, accounted for more than 40% of global total output, had become global solar battery production first big country.In solar cell application, the thin-film solar cell applications proportion is increasing simultaneously.
But along with the deterioration of environment, the aggravation of the destruction of ozone layer, the irradiation of intensive ultraviolet can not be underestimated the influence in thin-film solar cells life-span.At the use medium ultraviolet light of solar cell or directly gone out, or absorbed by battery by seepage, but change into be heat energy and and nonelectrical energy, this will directly influence the useful life of battery, and will be even more serious as far as this influence of silicon-base thin-film battery.Also there are some problems in some ultraviolet ray intercepting glasses that industrial circle adopts; The one, cost is higher; The 2nd, though having cut off ultraviolet ray, glass goes into to inject inside battery, and glass same temperature rise under ultraviolet irradiation is higher, and the heat conduction can make battery temperature increase after getting into battery equally; Cause battery work under higher temperature always, directly influence the performance of battery.Maximum problem is exactly in use because photic attenuating effect (S-W effect) causes the problem of battery efficiency decline in the application of amorphous silicon membrane battery industry, and the increase of temperature can aggravate the efficient decay of battery in the battery use.
U.S. scientist M. H. Nayfeh etc. show that through research the silicon nanoparticle of certain size size can change ultraviolet light into visible light; They have attempted on buik silicon battery component coated with nano silicon grain way and have improved thermal impact [the M. Stupc of ultraviolet ray to battery; M. Alsalhi, T. Al Saud, et al.; Appl. Phys. Lett. 91 (2007) 063107:1-3]; After its result of study showed that battery component applies the silicon grain of several nanometer diameters, battery had improved more than 62% at the transfer power of ultraviolet light wave band, has also improved 10% at infrared band.In hull cell, also do not see any similar report, because the difference of hull cell and buik silicon cell production process, this technology of exploitations such as professor Nayfeh can't directly apply in the hull cell technology.This is widely used the Nano thin film material in silicon-base thin-film battery [referring to patent: CN101369610A; CN101262024A; CN101866836A or the like]; But these are used is not to be directed against ultraviolet problem, and its manufacture craft and film design have very big difference, can't effectively prevent the adverse effect of ultraviolet ray to thin-film solar cells.
Summary of the invention
The present invention overcomes above-mentioned not enough problem; A kind of preparation method of thin-film solar cells of antiultraviolet is provided, and it adopts PECVD in-situ plasma lithographic technique on substrate, to prepare one deck Nano thin film layer, and technology is simple and easy to control; With low cost, antiultraviolet effective.
The present invention for realizing the technical scheme that above-mentioned purpose adopted is: a kind of preparation method of thin-film solar cells of nano-silicon antiultraviolet: backing material is a material transparent, at first on the transparent substrates material, prepares one deck amorphous silicon membrane through plasma enhanced chemical vapor deposition method (PECVD); Close SiH then 4Source of the gas, original position is carried out the H plasma discharge, utilizes H plasma etching amorphous silicon membrane, preparation one deck Nano thin film layer; After this on the Nano thin film layer, prepare Si 3N 4Antireflection layer; Prepare preceding electrode, p-i-n unijunction or multijunction cell and back electrode successively according to conventional hull cell preparation technology at last, carry out to obtain after conventional batteries encapsulates the thin-film solar cell of nano silicon of antiultraviolet.
A kind of preparation method of thin-film solar cells of nano-silicon antiultraviolet: backing material is opaque material, at first on opaque backing material, prepares back electrode, n-i-p unijunction or multijunction cell and preceding electrode successively according to conventional hull cell preparation technology; Then through plasma enhanced chemical vapor deposition method (PECVD) preparation one deck amorphous silicon membrane; After this close SiH 4Source of the gas, original position is carried out the H plasma discharge, utilizes H plasma etching amorphous silicon membrane, preparation one deck Nano thin film layer; Carry out to obtain after conventional batteries encapsulates the thin-film solar cell of nano silicon of antiultraviolet at last.
Said plasma enhanced chemical vapor deposition method (PECVD) preparation one deck amorphous silicon membrane, concrete technology is: microwave power 550-650W, H 2Flow 20-30 sccm, SiH 4Flow 8-10 sccm, substrate temperature 100-200 ℃ ℃, sedimentation time 1-3 minute.
Saidly on the Nano thin film layer, prepare Si 3N 4The concrete technology of antireflection layer is: utilize the preparation of microwave plasma body technique, microwave power 550-600W, N2 flow 25-35sccm, SiH4 flow 8-10sccm, substrate temperature 200-300 ℃, sedimentation time 30 minutes-2 hours.
Said transparent substrates material is glass or high polymer transparent material.
Said opaque backing material is stainless steel or polyimides.
The thickness of said amorphous silicon membrane is 5-10nm.
The said etch period of H plasma etching amorphous silicon membrane that utilizes is 1-3 minute.
The thickness of said Nano thin film layer is 5-8nm.
The silicon nanoparticle diameter is 2-5nm in the said Nano thin film layer.
The present invention adopts PECVD in-situ plasma lithographic technique to prepare the Nano thin film layer, and technology is simple and easy to control, and cost is lower; Utilize nano-silicon luminescence generated by light effect; Convert irradiation into can be absorbed by battery light wave to the ultraviolet ray of battery surface, thereby eliminate the fire damage of ultraviolet ray, the useful life of improving battery battery; Also can expand the utilization of battery simultaneously, improve battery conversion efficiency the sunlight ultraviolet band.
Description of drawings
Accompanying drawing 1 is the thin-film solar cell of nano silicon structure diagram of transparent substrates material.
Accompanying drawing 2 is the thin-film solar cell of nano silicon structure diagram of opaque backing material.
Among the figure, 1, glass substrate, 2, the Nano thin film layer, 3, Si 3N 4Antireflection layer, 4, preceding electrode, 5, n-i-p unijunction or multijunction cell layer, 6, back electrode, 7, opaque substrate.
Embodiment
Specify the present invention below in conjunction with specific embodiment and accompanying drawing, but the present invention is not limited to specific embodiment.
Embodiment 1
A kind of preparation method of thin-film solar cells of antiultraviolet selects glass as backing material, at first on glass substrate 1 material, passes through plasma enhanced chemical vapor deposition method (PECVD) (microwave power 600W, H 2Flow 20sccm, SiH 4Flow 8sccm, 200 ℃ of substrate temperatures, sedimentation time 2 minutes) the thick amorphous silicon membrane of preparation one deck 12nm; Close SiH then 4Source of the gas is kept the H plasma discharge, utilizes H plasma original position etching amorphous silicon membrane 1 minute, and preparation one deck silicon nanoparticle diameter is that the thickness of 2nm is the Nano thin film layer 2 of 8nm; After this on the Nano thin film layer, utilize the microwave plasma body technique to prepare Si 3N 4Antireflection layer 3 (microwave power 550-600W, N2 flow 25-35sccm, SiH4 flow 8-10sccm, substrate temperature 200-300 ℃, sedimentation time 30 minutes-2 hours); Electrode 4, p-i-n unijunction or multijunction cell 5 and back electrode 6 before preparing successively according to conventional hull cell preparation technology at last; Carry out to obtain after conventional batteries encapsulates the thin-film solar cells (as shown in Figure 1) of antiultraviolet; Through test; This thin-film solar cells has improved 60% in the conversion efficiency of ultraviolet light wave band, improves 30% useful life.
Embodiment 2
A kind of preparation method of thin-film solar cells of antiultraviolet; Select glass as backing material; At first on glass substrate 1 material, prepare the thick amorphous silicon membrane of one deck 10nm through plasma enhanced chemical vapor deposition method (PECVD) (parameter deposited for 90 seconds with embodiment 1); Close SiH then 4Source of the gas is closed SiH then 4Source of the gas is kept the H plasma discharge, utilizes H plasma original position etching amorphous silicon membrane 3 minutes, and preparation one deck silicon nanoparticle diameter is that the thickness of 5nm is the Nano thin film layer 2 of 5nm; After this on the Nano thin film layer, prepare Si 3N 4Antireflection layer 3; Electrode 4, p-i-n unijunction or multijunction cell 5 and back electrode 6 before preparing successively according to conventional hull cell preparation technology at last; Carry out to obtain after conventional batteries encapsulates the thin-film solar cells of antiultraviolet; Through test; This thin-film solar cells (like Fig. 1) has improved 63% in the conversion efficiency of ultraviolet wave band, improves 40% useful life.
Embodiment 3
A kind of preparation method of thin-film solar cells of antiultraviolet selects stainless steel as opaque substrate 7, at first on stainless steel material, prepares back electrode 6, n-i-p unijunction or multijunction cell 5 and preceding electrode 4 successively according to conventional hull cell preparation technology; Then through the thick amorphous silicon membrane of plasma enhanced chemical vapor deposition method (PECVD) (parameter deposited for 90 seconds with embodiment 1) preparation one deck 10nm; Close SiH then 4Source of the gas is kept the H plasma discharge, utilizes H plasma original position etching amorphous silicon membrane 1 minute, and preparation one deck silicon nanoparticle diameter is that the thickness of 2nm is the Nano thin film layer 2 of 6nm; Carry out can obtaining after conventional batteries encapsulates the thin-film solar cells (like Fig. 2) of antiultraviolet at last, through test, this thin-film solar cells has improved 61% in the conversion efficiency of ultraviolet light wave band, improves 32% useful life.
Embodiment 4
A kind of preparation method of thin-film solar cells of antiultraviolet selects polyimides as opaque substrate 7, at first on stainless steel material, prepares back electrode 6, n-i-p unijunction or multijunction cell 5 and preceding electrode 4 successively according to conventional hull cell preparation technology; Then through the thick amorphous silicon membrane of plasma enhanced chemical vapor deposition method (PECVD) (parameter deposited for 70 seconds with embodiment 1) preparation one deck 8nm; Close SiH then 4Source of the gas is kept the H plasma discharge, utilizes 90 seconds of H plasma original position etching amorphous silicon membrane, and preparation one deck silicon nanoparticle diameter is that the thickness of 3nm is the Nano thin film layer 2 of 6nm; Carry out can obtaining after conventional batteries encapsulates the thin-film solar cells (like Fig. 2) of antiultraviolet at last, through test, this thin-film solar cells has improved 65% in the conversion efficiency of ultraviolet light wave band, improves 37% useful life.

Claims (10)

1. the preparation method of the thin-film solar cells of a nano-silicon antiultraviolet, it is characterized in that: backing material is a material transparent, at first on the transparent substrates material through plasma enhanced chemical vapor deposition method (PECVD) preparation one deck amorphous silicon membrane; Close SiH then 4Source of the gas, original position is carried out the H plasma discharge, utilizes H plasma etching amorphous silicon membrane, preparation one deck Nano thin film layer; After this on the Nano thin film layer, prepare Si 3N 4Antireflection layer; Prepare preceding electrode, p-i-n unijunction or multijunction cell and back electrode successively according to conventional hull cell preparation technology at last, carry out to obtain after conventional batteries encapsulates the thin-film solar cell of nano silicon of antiultraviolet.
2. the preparation method of the thin-film solar cells of a nano-silicon antiultraviolet; It is characterized in that: backing material is opaque material, at first on opaque backing material, prepares back electrode, n-i-p unijunction or multijunction cell and preceding electrode successively according to conventional hull cell preparation technology; Then through plasma enhanced chemical vapor deposition method (PECVD) preparation one deck amorphous silicon membrane; After this close SiH 4Source of the gas, original position is carried out the H plasma discharge, utilizes H plasma etching amorphous silicon membrane, preparation one deck Nano thin film layer; Carry out to obtain after conventional batteries encapsulates the thin-film solar cell of nano silicon of antiultraviolet at last.
3. the preparation method of the thin-film solar cells of a kind of nano-silicon antiultraviolet according to claim 1 is characterized in that: said transparent substrates material is glass or high polymer transparent material.
4. the preparation method of the thin-film solar cells of a kind of nano-silicon antiultraviolet according to claim 2 is characterized in that: said opaque backing material is stainless steel or polyimides.
5. according to the preparation method of the thin-film solar cells of the arbitrary described a kind of nano-silicon antiultraviolet of claim 1-4; It is characterized in that: said plasma enhanced chemical vapor deposition method (PECVD) preparation one deck amorphous silicon membrane; Concrete technology is: microwave power 550-650W, H 2Flow 20-30 sccm, SiH 4Flow 8-10 sccm, substrate temperature 100-200 ℃ ℃, sedimentation time 1-3 minute.
6. according to the preparation method of the thin-film solar cells of claim 1 or 3 described a kind of nano-silicon antiultraviolets, it is characterized in that: saidly on the Nano thin film layer, prepare Si 3N 4The concrete technology of antireflection layer is: utilize the preparation of microwave plasma body technique, microwave power 550-600W, N2 flow 25-35sccm, SiH4 flow 8-10sccm, substrate temperature 200-300 ℃, sedimentation time 30 minutes-2 hours.
7. according to the preparation method of the thin-film solar cells of the arbitrary described a kind of nano-silicon antiultraviolet of claim 1-4, it is characterized in that: the thickness of said amorphous silicon membrane is 5-10nm.
8. according to the preparation method of the thin-film solar cells of the arbitrary described a kind of nano-silicon antiultraviolet of claim 1-4, it is characterized in that: the etch period of the said H of utilization plasma etching amorphous silicon membrane is 1-3 minute.
9. according to the preparation method of the thin-film solar cells of the arbitrary described a kind of nano-silicon antiultraviolet of claim 1-4, it is characterized in that: the thickness of said Nano thin film layer is 5-8nm.
10. according to the preparation method of the thin-film solar cells of the arbitrary described a kind of nano-silicon antiultraviolet of claim 1-4, it is characterized in that: the silicon nanoparticle diameter is 2-5nm in the said Nano thin film layer.
CN2011104222159A 2011-12-16 2011-12-16 Preparation method for ultraviolet-proof thin-film solar cell Pending CN102496652A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103602957A (en) * 2013-11-07 2014-02-26 中山市创科科研技术服务有限公司 Equipment for preparing alpha_SiH membrane

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CN101431128A (en) * 2008-12-02 2009-05-13 华中科技大学 Production method of amorphous silicon laminated solar cell
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103602957A (en) * 2013-11-07 2014-02-26 中山市创科科研技术服务有限公司 Equipment for preparing alpha_SiH membrane

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Application publication date: 20120613