CN102496616B - There is semiconductor element and the manufacture method thereof of integrated passive element - Google Patents
There is semiconductor element and the manufacture method thereof of integrated passive element Download PDFInfo
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- CN102496616B CN102496616B CN201110404709.4A CN201110404709A CN102496616B CN 102496616 B CN102496616 B CN 102496616B CN 201110404709 A CN201110404709 A CN 201110404709A CN 102496616 B CN102496616 B CN 102496616B
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Abstract
The present invention is about a kind of semiconductor element and the manufacture method thereof with integrated passive element.This semiconductor element comprises a base material, a resistor, an inductor, a connection gasket, a protective layer and a ball lower metal layer.This resistor, this inductor and this connection gasket are adjacent to a surface of this base material, and are electrically connected to each other.The lower surface copline of the lower surface of this inductor and this resistor.This protective layer covers this inductor and this resistor.This ball lower metal layer is positioned at the opening of this protective layer to be electrically connected this connection gasket.By this, the thickness of this semiconductor element can effectively be reduced.
Description
Technical field
The present invention about a kind of base material and processing method thereof, in detail, about a kind of semiconductor element and the manufacture method thereof with integrated passive element.
Background technology
Usually the passive device such as resistor and inductor can be had in known circuit.In order to microminiaturized object, this resistor and this inductor being integrated into semiconductor technology to form a semiconductor element with integrated passive element (IntegratedPassiveDevice, IPD) is just a main trend.But the thickness of this known semiconductor element cannot effectively reduce, and microminiaturized object cannot be reached.
Therefore, be necessary to provide a kind of semiconductor element and the manufacture method thereof with integrated passive element, to solve the problem.
Summary of the invention
The invention provides a kind of semiconductor element with integrated passive element, it comprises a base material, a resistor, an inductor, a connection gasket, one first protective layer and one first ball lower metal layer (UBM).This base material has a first surface and a second surface.This resistor is adjacent to the first surface of this base material, and comprises one first metal and two electrodes, and these electrodes are positioned on this first metal, and separated from one another.This inductor is adjacent to the first surface of this base material, and is electrically connected this resistor, the lower surface copline of the lower surface of this inductor and this first metal.This connection gasket is adjacent to the first surface of this base material, and is electrically connected this inductor.This first protective layer covers this inductor and this resistor, and this first protective layer has at least one opening to appear this connection gasket.This first ball lower metal layer (UBM) is positioned at the opening of this first protective layer to be electrically connected this connection gasket.
By this, this inductor and this connection gasket are same layer, and namely define this resistor after this inductor of formation, so can reach shortened process and cost-effective effect.In addition, the lower surface copline of the lower surface of this inductor and this first metal, and effectively can reduce the thickness of this semiconductor element.
The present invention separately provides a kind of semiconductor element with integrated passive element, and it comprises a base material, a resistor, an inductor, a connection gasket, one first protective layer and one first ball lower metal layer (UBM).This base material has a first surface, a second surface and at least one via, and this at least one via is revealed in the first surface of this base material.This resistor is adjacent to the first surface of this base material, and this resistor comprises one first metal and two electrodes, and these electrodes are positioned on this first metal, and separated from one another.This inductor is adjacent to the first surface of this base material, and is electrically connected this resistor.This connection gasket is adjacent to the first surface of this base material, and is electrically connected this inductor and at least one via.This first protective layer covers this resistor and this inductor, and has at least one opening to appear this connection gasket.This first ball lower metal layer (UBM) is positioned at the opening of this first protective layer to be electrically connected this connection gasket.
The present invention separately provides a kind of manufacture method with the semiconductor element of integrated passive element, and it comprises the following steps: (a) provides a base material, and this base material has a first surface and a second surface; B () forms one first metal in the first surface of this base material; C () forms one second metal on this first metal; D () removes this first metal of part and this second metal; E () forms the first surface of one the 3rd metal adjacent to this base material to form an inductor and a connection gasket, this inductor is electrically connected this connection gasket; F () removes this second metal of part, to form two electrodes be separated, make this first metal and these electrodes form a resistor, at least one of them is electrically connected this inductor to these electrodes; G () forms one first protective layer on this inductor and this resistor, this first protective layer has at least one opening to appear this connection gasket; And (h) forms one the 4th metal to form one first ball lower metal layer (UBM) in the opening of this first protective layer, and be electrically connected this connection gasket.
Accompanying drawing explanation
Fig. 1 shows the cross-sectional schematic that the present invention has an embodiment of the semiconductor element of integrated passive element;
Fig. 2 to Fig. 7 shows the schematic diagram that the present invention has an embodiment of the manufacture method of the semiconductor element of integrated passive element;
Fig. 8 shows the cross-sectional schematic that the present invention has another embodiment of the semiconductor element of integrated passive element;
Fig. 9 to Figure 13 shows the schematic diagram that the present invention has another embodiment of the manufacture method of the semiconductor element of integrated passive element;
Figure 14 shows the cross-sectional schematic that the present invention has another embodiment of the semiconductor element of integrated passive element;
Figure 15 shows the schematic diagram that the present invention has another embodiment of the manufacture method of the semiconductor element of integrated passive element;
Figure 16 shows the cross-sectional schematic that the present invention has another embodiment of the semiconductor element of integrated passive element;
Figure 17 shows the schematic diagram that the present invention has another embodiment of the manufacture method of the semiconductor element of integrated passive element;
Figure 18 shows the resistor of the semiconductor element of Figure 16 and the cross-sectional schematic of inductor;
Figure 19 shows the cross-sectional schematic that the present invention has another embodiment of the semiconductor element of integrated passive element; And
Figure 20 shows the resistor of the semiconductor element of Figure 19 and the cross-sectional schematic of inductor.
Embodiment
With reference to figure 1, display the present invention has the cross-sectional schematic of an embodiment of the semiconductor element of integrated passive element.This semiconductor element 1 comprises base material 11, resistor 121, inductor 161, connection gasket 162,1 first protective layer 17 and an one first ball lower metal layer (UBM) 201.
In FIG, this base material 11 has first surface 111 and a second surface 112.In the present embodiment, this base material 11 is a glass baseplate.
In FIG, this resistor 121 is adjacent to the first surface 111 of this base material 11, and comprises one first metal 12 and two electrodes 131.This first metal 12 is a resistive layer; These electrodes 131 are positioned on this first metal 12, and separated from one another.These electrodes 131 formed by one second metal 13.In the present embodiment, the first metal 12 of this resistor 121 is located immediately at the first surface 111 of this base material 11, and this first metal 12 is tantalum nitride (TaN), and this second metal 13 is aluminum bronze (AlCu) or titanium (Ti).
In FIG, this inductor 161 is adjacent to the first surface 111 of this base material 11, and is electrically connected this resistor 121.The lower surface of this inductor 161 and the lower surface copline of this first metal 12.In the present embodiment, this inductor 161 is located immediately at the first surface 111 of this base material 11, and is positioned at the side of this resistor 121.This inductor 161 comprises one the 3rd metal 16 and one first crystal seed layer the 14, three metal 16 is copper (Cu), and this first crystal seed layer 14 is titanium copper (TiCu).But be understandable that, this first crystal seed layer 14 can be omitted, that is the 3rd metal 16 of this position is this inductor 161.In addition, as shown in Figure 1, this inductor 161 contacts the first metal 12 and the electrode 131 of this resistor 121 simultaneously, and one end of this inductor 161 more extends to above this electrode 131.
In FIG, this connection gasket 162 is adjacent to the first surface 111 of this base material 11, and is electrically connected this inductor 161.This connection gasket 162 is in order to provide the electric connection of vertical direction.In the present embodiment, this connection gasket 162 is located immediately at the first surface 111 of this base material 11, and the lower surface copline of its lower surface and this first metal 12.This connection gasket 162 is same layer with this inductor 161, and it comprises one the 3rd metal 16 and one first crystal seed layer the 14, three metal 16 is copper (Cu), and this first crystal seed layer 14 is titanium copper (TiCu).But be understandable that, this first crystal seed layer 14 can be omitted, that is the 3rd metal 16 of this position is this connection gasket 162.
In FIG, this first protective layer 17 covers this inductor 161 and this resistor 121, and has at least one opening 171 to appear this connection gasket 162.This first protective layer 17 of part directly contacts the first surface 111 of this first metal 12 and this base material 11, and the material of this first protective layer 17 can be pi (PI) or polypropylene (PP) etc.
In FIG, this first ball lower metal layer (UBM) 201 is positioned at the opening 171 of this first protective layer 17 to be electrically connected this connection gasket 162.In the present embodiment, this first ball lower metal layer (UBM) 201 more extends to the upper surface of this first protective layer 17, and comprises one the 4th metal 20 and one second crystal seed layer 18.4th metal 20 is single or multiple lift structure, and this second crystal seed layer 18 is titanium copper (TiCu).But be understandable that, this second crystal seed layer 18 can be omitted, that is the 4th metal 20 of this position is this first ball lower metal layer (UBM) 201.
Referring to figs. 2 to Fig. 7, display the present invention has the schematic diagram of an embodiment of the manufacture method of the semiconductor element of integrated passive element.
With reference to figure 2, provide a base material 11, this base material 11 has first surface 111 and a second surface 112.In the present embodiment, this base material 11 is a glass baseplate.Afterwards, form one first metal 12 in the first surface 111 of this base material 11, and form one second metal 13 on this first metal 12.In the present embodiment, this first metal 12 is located immediately on the first surface 111 of this base material 11, and this first metal 12 is tantalum nitride (TaN), and this second metal 13 is aluminum bronze (AlCu) or titanium (Ti).
With reference to figure 3, form one first photoresistance 10 on this second metal 13, and remove this first photoresistance 10 of part, make this first photoresistance 10 have a remainder 101 to cover this second metal 13 of part.
With reference to figure 4, remove not by the first metal 12 and the second metal 13 that this remainder 101 covers, and remove this first photoresistance 10 completely.
With reference to figure 5, preferably, one first crystal seed layer 14 is formed on the first surface 111 and this second metal 12 of this base material 11.This first crystal seed layer 14 is titanium copper (TiCu).Then, form one second photoresistance 15, this second photoresistance has at least one opening 151.In the present embodiment, this opening 151 with overlook sight for helical form, and the corner of its one end this second metal 13 corresponding.
With reference to figure 6, form one the 3rd metal 16 in this at least one opening 151 of this second photoresistance 15.In the present embodiment, the 3rd metal 16 is copper (Cu).Then, this second photoresistance 15 is removed.
Then, remove not by the first crystal seed layer 14 that the 3rd metal 16 covers, make the 3rd metal 16 form inductor 161 and a connection gasket 162.Meanwhile, remove this second metal 13 of part, to form two electrodes 131 be separated, make this first metal 12 and these electrodes 13 form a resistor 121.This inductor 161 be electrically connected this connection gasket 162 and these electrodes 13 at least one of them.In the present embodiment, the lower surface of this inductor 161 and this connection gasket 162 and the lower surface copline of this first metal 12.This inductor 161 and this connection gasket 162 are located immediately at the first surface 111 of this base material 11, and are positioned at the side of this resistor 121.This inductor 161 and this connection gasket 162 all comprise the 3rd metal 16 and this first crystal seed layer 14.But be understandable that, this first crystal seed layer 14 can be omitted, that is the 3rd metal 16 of this position is this inductor 161 and this connection gasket 162, and can omit the step removing this first crystal seed layer 14.In addition, this inductor 161 contacts this first metal 12 and this second metal 13 simultaneously, and one end of this inductor 161 more extends to above this second metal 13.
With reference to figure 7, form one first protective layer 17 on this inductor 161 and this resistor 121, this first protective layer 17 has at least one opening 171 to appear this connection gasket 162.This first protective layer 17 of part directly contacts the first surface 111 of this first metal 12 and this base material 11.
Preferably, one second crystal seed layer 18 is formed in this first protective layer 17 and opening 171 thereof, to contact this connection gasket 162.In the present embodiment, this second crystal seed layer 18 is titanium copper (TiCu).Then, form one the 3rd photoresistance 19 on this second crystal seed layer 18, the 3rd photoresistance 19 has at least one opening 191, and it is to should the opening 171 of the first protective layer 17.The opening 191 of the 3rd photoresistance 19 is greater than the opening 171 of this first protective layer 17.
Then, one the 4th metal 20 is formed to form one first ball lower metal layer (UBM) 201 in the opening 171 of this first protective layer 17, and obtained semiconductor element 1 shown in Fig. 1.This first ball lower metal layer (UBM) 201 is electrically connected this connection gasket 162.In the present embodiment, the 4th metal 20 is single or multiple lift structure, and to be formed in this first protective layer 17 opening 171 on second crystal seed layer 18.Then, remove the 3rd photoresistance 19 and not by the second crystal seed layer 18 that the 4th metal 20 covers, make this first ball lower metal layer (UBM) 201 comprise the 4th metal 20 and this second crystal seed layer 18.But be understandable that, this second crystal seed layer 18 can be omitted, that is the 4th metal 20 of this position is this first ball lower metal layer (UBM) 201, and can omit the step removing this second crystal seed layer 18.In addition, this first ball lower metal layer (UBM) 201 more extends to the upper surface of this first protective layer 17.In the present embodiment, this inductor 161 and this connection gasket 162 are same layer, and namely define this resistor 121 after this inductor 161 of formation, so can reach shortened process and cost-effective effect.In addition, the lower surface of this inductor 161 and the lower surface copline of this first metal 12, and effectively can reduce the thickness of this semiconductor element 1.
With reference to figure 8, display the present invention has the cross-sectional schematic of another embodiment of the semiconductor element of integrated passive element.This semiconductor element 2 is roughly the same with the semiconductor element 1 shown in Fig. 1, and identical numbering given by wherein identical element.This semiconductor element 2 is different from the semiconductor element 1 shown in Fig. 1 be in, this semiconductor element 2 more comprises one second protective layer 30 and one second ball lower metal layer (UBM) 331, and this base material 11 has at least one via 28.
In fig. 8, this via 28 is revealed in first surface 111 and the second surface 112 of this base material 11, and this connection gasket 162 is electrically connected this via 28.This via 28 comprises central insulating material 24, internally connecting metals 23 and an outer shroud insulating material 27.This internally connecting metals 23 is ring-type, and is located between this central insulating material 24 and this outer shroud insulating material 27.This second protective layer 30 is positioned on the second surface 112 of this base material 11, and has at least one opening 301 to appear this via 28.This second ball lower metal layer (UBM) 331 is positioned at the opening 301 of this second protective layer 30 to be electrically connected this via 28.The material of this second protective layer 30 is identical with the material of this first protective layer 17.
In fig. 8, in the present embodiment, this second ball lower metal layer (UBM) 331 more extends to the upper surface of this second protective layer 30, and comprises a five metals and belong to 33 and one the 3rd crystal seed layer 31.This five metals belongs to 33 for single or multiple lift structure, and the 3rd crystal seed layer 31 is titanium copper (TiCu).But be understandable that, the 3rd crystal seed layer 31 can be omitted, that is the five metals of this position belongs to 33 and is this second ball lower metal layer (UBM) 331.
With reference to figure 9 to Figure 13, display the present invention has the schematic diagram of another embodiment of the manufacture method of the semiconductor element of integrated passive element.The manufacture method of the present embodiment is roughly the same with the manufacture method of Fig. 2 to Fig. 9, and it does not exist together as follows.In the present embodiment, be more included in before the step of Fig. 2 on this base material 11 and form at least one via 28, as described below.
With reference to figure 9, form a photoresist layer on the first surface 111 of this base material 11, wherein this photoresist layer has at least one opening.Then, according to this base material 11 of opening etching of this photoresist layer, slot in the first surface 111 of this base material 11 to form one, this fluting has sidewall 221 and a bottom surface 222.
Then, form an internally connecting metals 23 in this sidewall 221 and this bottom surface 222 of this fluting, and form a central channel.Then, the internally connecting metals 23 be positioned on this base material 11 first surface 111 is removed.Then, an insulating material 24 is formed in this base material 11 first surface 111 and this central channel.Then, remove the insulating material 24 be positioned on this base material 11 first surface 111, make this insulating material 24 form a central insulating material 24 in this central channel.
With reference to Figure 10, then, form an annular groove in the first surface 111 of this base material 11, this annular groove is around this internally connecting metals 23.Then, an insulating material 27 is formed in this base material 11 first surface 111 and this annular groove.Then, remove the insulating material 27 be positioned on this base material 11 first surface 111, make this insulating material 27 form an outer shroud insulating material 27 in this annular groove, and form a via 28.Then, form this first metal 12 in the first surface 111 of this base material 11, and form this second metal 13 on this first metal 12, wherein this first metal 12 contacts this via 28.
With reference to Figure 11, then, the follow-up technique of the present embodiment is all identical with the manufacture method of Fig. 2 to Fig. 7, sequentially to form this inductor 161, this connection gasket 162, this resistor 121, this first protective layer 17 and this first ball lower metal layer (UBM) 201.
With reference to Figure 12, provide a carrier 29, and be attached on this carrier 29 by this base material 11, wherein the first surface 111 of this base material 11 is in the face of this carrier 29.Then, with etch or lapping mode from this base material 11 of second surface 112 thinning of this base material 11, to remove this base material 11 of part, in order to do appearing this via 28.
Then, form one second protective layer 30 on the second surface 112 of this base material 11, and there is at least one opening 301 to appear this via 28.This second protective layer 30 directly contacts the second surface 112 of this base material 11.
With reference to Figure 13, preferably, one the 3rd crystal seed layer 31 is formed in this second protective layer 30 and opening 301 thereof, to contact this via 28.In the present embodiment, the 3rd crystal seed layer 31 is titanium copper (TiCu).Then, form one the 4th photoresistance 32 on the 3rd crystal seed layer 31, the 4th photoresistance 32 has at least one opening 321, and it is to should the opening 301 of the second protective layer 30.The opening 321 of the 4th photoresistance 32 is greater than the opening 301 of this second protective layer 30.
With reference to Figure 13, form a five metals and belong to 33 to form one second ball lower metal layer (UBM) 331 in the opening 301 of this second protective layer 30, and be electrically connected this via 28.In the present embodiment, this five metals belongs to 33 for single or multiple lift structure, and to be formed in this second protective layer 30 opening 301 on the 3rd crystal seed layer 31.Then, remove the 4th photoresistance 32 and do not belonged to the 3rd crystal seed layer 31 of 33 coverings by this five metals, make this second ball lower metal layer (UBM) 331 comprise this five metals and belong to 33 and the 3rd crystal seed layer 31.But be understandable that, the 3rd crystal seed layer 31 can be omitted, that is the five metals of this position belongs to 33 and is this second ball lower metal layer (UBM) 331, and can omit the step removing the 3rd crystal seed layer 31.In addition, this second ball lower metal layer (UBM) 331 more extends to the upper surface of this second protective layer 30.
With reference to Figure 14, display the present invention has the cross-sectional schematic of another embodiment of the semiconductor element of integrated passive element.This semiconductor element 3 is roughly the same with the semiconductor element 1 shown in Fig. 1, and identical numbering given by wherein identical element.This semiconductor element 3 is different from the semiconductor element 1 shown in Fig. 1 be in, the base material 11 of this semiconductor element 3 is a silicon substrate, and this semiconductor element 3 more comprises an insulating barrier 34.This insulating barrier 34 is positioned at the first surface 111 of this base material 11, and the first crystal seed layer 14 of the first metal 12 of this resistor 121, this inductor 161 and the first crystal seed layer 14 of this connection gasket 162 are positioned on this insulating barrier 34.
With reference to Figure 15, display the present invention has the schematic diagram of another embodiment of the manufacture method of the semiconductor element of integrated passive element.The manufacture method of the present embodiment is roughly the same with the manufacture method of Fig. 2 to Fig. 7, and it does not exist together as follows.
With reference to Figure 15, in the present embodiment, before the step of Fig. 2, more on the first surface 111 of this base material 11, form an insulating barrier 34.
Then, form this first metal 12 in this insulating barrier 34, and form this second metal 13 on this first metal 12.Then; the follow-up technique of the present embodiment is all identical with the manufacture method of Fig. 2 to Fig. 7; sequentially to form this inductor 161, this connection gasket 162, this resistor 121, this first protective layer 17 and this first ball lower metal layer (UBM) 201; and this this semiconductor element 3 obtained, as shown in figure 14.
With reference to Figure 16, display the present invention has the cross-sectional schematic of another embodiment of the semiconductor element of integrated passive element.This semiconductor element 4 is roughly the same with the semiconductor element 2 shown in Fig. 8, and identical numbering given by wherein identical element.This semiconductor element 4 is different from the semiconductor element 2 shown in Fig. 8 be in, the base material 11 of this semiconductor element 4 is a silicon substrate, and this semiconductor element 4 more comprises an insulating barrier 34.This insulating barrier 34 is positioned at the first surface 111 of this base material 11, and has at least one opening 341 to appear this via 28.This connection gasket 162 is positioned at the opening 341 of this insulating barrier 34, to be electrically connected this via 28.First crystal seed layer 14 of the first metal 12 of this resistor 121, the first crystal seed layer 14 of this inductor 161 and this connection gasket 162 is positioned on this insulating barrier 34.
With reference to Figure 17, display the present invention has the schematic diagram of another embodiment of the manufacture method of the semiconductor element of integrated passive element.The manufacture method of the present embodiment is roughly the same with the manufacture method of Fig. 9 to Figure 13, and it does not exist together as follows.
With reference to Figure 17, in the present embodiment, before the step of Fig. 2, more on the first surface 111 of this base material 11, form an insulating barrier 34, this insulating barrier 34 has at least one opening 341 to appear this via 28.
Then, form this first metal 12 in this insulating barrier 34 and opening 341 thereof, and form this second metal 13 on this first metal 12.Then; the follow-up technique of the present embodiment is all identical with the manufacture method of Fig. 9 to Figure 13; sequentially to form this inductor 161, this connection gasket 162, this resistor 121, this first protective layer 17 and this first ball lower metal layer (UBM) 201; and this this semiconductor element 4 obtained, as shown in figure 16.In the present embodiment, this connection gasket 162 is positioned at the opening 341 of this insulating barrier 34, to be electrically connected this via 28.
With reference to Figure 18, the resistor of semiconductor element of display Figure 16 and the cross-sectional schematic of inductor.This semiconductor element 4 has a resistor 121 (Figure 16), two inductors 161 and two connection gaskets 162.Each this inductor 161 with overlook sight for helical form, and around each this connection gasket 162.Each this inductor 161 connects the electrode 131 of this resistor 121.
With reference to Figure 19, display the present invention has the cross-sectional schematic of another embodiment of the semiconductor element of integrated passive element.This semiconductor element 5 is roughly the same with the semiconductor element 4 shown in Figure 16, and identical numbering given by wherein identical element.This semiconductor element 5 is different from the semiconductor element 4 shown in Figure 16 be in, this semiconductor element 5 only has an inductor 161 and a connection gasket 162, as shown in left side in figure.In addition, this semiconductor element 5 more comprises a connection line 163, and its one end connects an electrode 131 of this resistor 121, and the other end can connect for vertical electrical.
With reference to Figure 20, the resistor of semiconductor element of display Figure 19 and the cross-sectional schematic of inductor.This semiconductor element 5 has a resistor 121 (Figure 19), an inductor 161, connection gasket 162 and a connection line 163.This inductor 161 with overlook sight for helical form, and around this connection gasket 162.This inductor 161 connects the electrode 131 of this resistor 121.One end of this connection line 163 connects an electrode 131 of this resistor 121, and the other end can connect for vertical electrical.
Only above-described embodiment is only and principle of the present invention and effect thereof is described, and is not used to limit the present invention.Therefore, the personage practised in this technology modifies to above-described embodiment and changes still de-spirit of the present invention.Interest field of the present invention should listed by claims.
Claims (16)
1. there is a semiconductor element for integrated passive element, comprising:
One base material, has a first surface and a second surface;
One resistor, is adjacent to the first surface of this base material, and this resistor comprises one first metal and two electrodes, and described electrode is positioned on this first metal, and separated from one another;
One inductor, is adjacent to the first surface of this base material, and is electrically connected this resistor, the lower surface copline of the lower surface of this inductor and this first metal, and this first metal and electrode of this this resistor of inductor contacts;
One connection gasket, is adjacent to the first surface of this base material, and is electrically connected this inductor;
One first protective layer, covers this inductor and this resistor, and this first protective layer has at least one opening to appear this connection gasket; And
One first ball lower metal layer, is positioned at the opening of this first protective layer to be electrically connected this connection gasket.
2. semiconductor element as claimed in claim 1, wherein this base material has at least one via, is revealed in the first surface of this base material, and this connection gasket is electrically connected to this via.
3. semiconductor element as claimed in claim 2, wherein this via comprises a central insulating material, an internally connecting metals and an outer shroud insulating material, and this internally connecting metals is ring-type, and is located between this central insulating material and this outer shroud insulating material.
4. semiconductor element as claimed in claim 1, more comprises an insulating barrier, be positioned at the first surface of this base material, and this first metal is positioned on this insulating barrier.
5. semiconductor element as claimed in claim 2, more comprises an insulating barrier, is positioned at the first surface of this base material, this first metal is positioned on this insulating barrier, this insulating barrier has at least one opening to appear this via, and this connection gasket is positioned at the opening of this insulating barrier, to be electrically connected this via.
6. semiconductor element as claimed in claim 1, wherein this inductor comprises one the 3rd metal and one first crystal seed layer, and this connection gasket comprises the 3rd metal and this first crystal seed layer.
7. semiconductor element as claimed in claim 2, wherein this via is more revealed in this base material
Second surface, and this semiconductor element more comprises:
One second protective layer, is positioned on the second surface of this base material, and this second protective layer has at least one opening to appear this via; And
One second ball lower metal layer, is positioned at the opening of this second protective layer to be electrically connected this via.
8. there is a semiconductor element for integrated passive element, comprising:
One base material, have a first surface, a second surface and at least one via, this at least one via is revealed in the first surface of this base material;
One resistor, is adjacent to the first surface of this base material, and this resistor comprises one first metal and two electrodes, and described electrode is positioned on this first metal, and separated from one another;
One inductor, is adjacent to the first surface of this base material, and is electrically connected this resistor, and this first metal and electrode of this this resistor of inductor contacts;
One connection gasket, is adjacent to the first surface of this base material, and is electrically connected this inductor and at least one via;
One first protective layer, covers this resistor and this inductor, and has at least one opening to appear this connection gasket; And
One first ball lower metal layer, is positioned at the opening of this first protective layer to be electrically connected this connection gasket.
9. semiconductor element as claimed in claim 8, wherein this at least one via comprises a central insulating material, an internally connecting metals and an outer shroud insulating material, and this internally connecting metals is ring-type, and is located between this central insulating material and this outer shroud insulating material.
10. semiconductor element as claimed in claim 8, more comprise an insulating barrier, be positioned at the first surface of this base material, this first metal is positioned on this insulating barrier, and this insulating barrier has at least one opening to appear this at least one via; This connection gasket is positioned at the opening of this insulating barrier, to be electrically connected this at least one via.
11. semiconductor elements as claimed in claim 8, wherein this inductor comprises one the 3rd metal and one first crystal seed layer, and this connection gasket comprises the 3rd metal and this first crystal seed layer.
12. semiconductor elements as claimed in claim 8, wherein this via is more revealed in the second surface of this base material, and this semiconductor element more comprises:
One second protective layer, is positioned on the second surface of this base material, and has at least one opening to appear this at least one via; And
One second ball lower metal layer, is positioned at the opening of this second protective layer to be electrically connected this at least one via.
13. 1 kinds of manufacture methods with the semiconductor element of integrated passive element, comprising:
A () provides a base material, this base material has a first surface and a second surface;
B () forms one first metal in the first surface of this base material;
C () forms one second metal on this first metal;
D () removes this first metal of part and this second metal;
E () forms the first surface of one the 3rd metal adjacent to this base material to form an inductor and a connection gasket, this inductor is electrically connected this connection gasket;
F () removes this second metal of part, to form two electrodes be separated, make this first metal and described electrode form a resistor, at least one of them is electrically connected this inductor to described electrode;
G () forms one first protective layer on this inductor and this resistor, this first protective layer has at least one opening to appear this connection gasket; And
H () forms one the 4th metal to form one first ball lower metal layer in the opening of this first protective layer, and be electrically connected this connection gasket.
14. as the method for claim 13, wherein more comprises the step of formation one first photoresistance on this second metal after this step (c), and this first photoresistance has a remainder to cover partly this second metal; This step (d) removes the first metal and the second metal that are not covered by this remainder, and removes this first photoresistance completely; More comprise the step of formation one second photoresistance after this step (d), this second photoresistance has at least one opening; And this step (e) forms one the 3rd metal in this at least one opening of this second photoresistance to form this inductor and this connection gasket, then, removes this second photoresistance.
15. as the method for claim 13, wherein this base material of this step (a) has at least one via, be revealed in the first surface of this base material, formation one insulating barrier is more comprised in the step of the first surface of this base material after this step (a), this insulating barrier has at least one opening to appear this via, and the connection gasket of this step (e) is formed in the opening of this insulating barrier, to be electrically connected this at least one via.
16. as the method for claim 15, wherein more comprises after this step (h):
I () provides a carrier;
J this base material is attached on this carrier by (), wherein the first surface of this base material is in the face of this carrier;
(k) from this base material of second surface thinning of this base material, with remove part this base material, to appear this at least one via; And
L () removes this carrier.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110404709.4A CN102496616B (en) | 2011-11-28 | 2011-11-28 | There is semiconductor element and the manufacture method thereof of integrated passive element |
| CN201610194443.8A CN105789199B (en) | 2011-11-28 | 2011-11-28 | Semiconductor element and its manufacturing method with integrated passive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110404709.4A CN102496616B (en) | 2011-11-28 | 2011-11-28 | There is semiconductor element and the manufacture method thereof of integrated passive element |
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