CN102495265A - Current sampling circuit of metal oxide semiconductor field effect transistor (MOSFET) switch element - Google Patents
Current sampling circuit of metal oxide semiconductor field effect transistor (MOSFET) switch element Download PDFInfo
- Publication number
- CN102495265A CN102495265A CN2011103913215A CN201110391321A CN102495265A CN 102495265 A CN102495265 A CN 102495265A CN 2011103913215 A CN2011103913215 A CN 2011103913215A CN 201110391321 A CN201110391321 A CN 201110391321A CN 102495265 A CN102495265 A CN 102495265A
- Authority
- CN
- China
- Prior art keywords
- semiconductor
- oxide
- metal
- current
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Electronic Switches (AREA)
Abstract
The invention discloses a current sampling circuit of a metal oxide semiconductor field effect transistor (MOSFET) switch element. A first end of the switch element is connected with a first input end of a sampling module and serves as a current input signal end, a second end of the switch element is connected with a second input end of the sampling module and serves as a current output signal end of the MOSFET switch element, and an output end of the sampling module serves as a sampling current output signal end. The sampling module directly samples voltage difference of the first end and the second end of the MOSFET switch element. Maximum voltage difference value allowed between the first input end and the second input end of the sampling module is a withstand voltage value between two input ends of the sampling module. A clamping module included in the sampling module increases the withstand voltage value of the sampling module so that a current path formed between the first input end and the second input end of the sampling module is blocked, and working voltage range of the current sampling circuit of the MOSFET switch element is improved.
Description
Technical field
The present invention relates to the current sample technology in the electric power management circuit, more precisely, relate to a kind of technology and current sampling circuit of sampling through the electric current of switch mosfet element conductive resistance.
Background technology
The application of electric power management circuit is very extensive; Most electric power management circuits all need built-in or external switch mosfet element; And detect the current value that flows through the switch mosfet element; Obtain voltage signal relevant or current signal, according to the unlatching and the shutoff of this voltage signal or current signal control switch mosfet element with this current value.
Figure 1A is depicted as the current sampling circuit of typical switch mosfet element; Sample streams is crossed the current value of switch mosfet element 1 in this circuit: said on-off element is a P channel mosfet on-off element; First end of switch mosfet element connects the output terminal of sampling element 02 and second input end of sampling module 03, and second end of said on-off element is as the current output signal end; The input end of said sampling element 02 links to each other with the first input end of sampling module 03, and as the current input signal end.
The principle of the current sampling circuit of the element of switch mosfet shown in Figure 1A is, approximately thinks the electric current I that flows through the switch mosfet element
OUTWith the electric current I that flows through the sampling element that links to each other with the switch mosfet element
INEquate that through detecting the voltage difference on the sampling element, sampling module detects and flows through the size of current of sampling element and export sample rate current signal IO.
The concrete realization of the current sampling circuit of the element of switch mosfet shown in Figure 1A and application are shown in Figure 1B: said switch mosfet element 01 is the P raceway groove first metal-oxide-semiconductor M1; Said sampling element 02 is a resistance R 0; One end of resistance R 0 links to each other with the first input end of the substrate terminal of the first metal-oxide-semiconductor M1 and said electric current and voltage modular converter 03; And as the current input signal end, the output terminal of resistance R 0 connects the source end of the first metal-oxide-semiconductor M1 and second input end of sampling module 03;
Said sampling module 03 comprises first resistance R 1, second resistance R 2; The 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4, constant current source I03 and constant current source I04 form; First resistance R 1 equals second resistance R 2; The 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 are the identical coupling pipe of breadth length ratio, and the electric current of constant current source I03 equals the electric current of constant current source I04.
One end of first resistance R 1 links to each other with the substrate terminal of the end of sampling element R0 and the first metal-oxide-semiconductor M1; And as the current input signal end; One end of second resistance R 2 connects the other end of sampling element R0 and the source end of the first metal-oxide-semiconductor M1, and source end, the substrate terminal of the other end of first resistance R 1 and the 3rd PMOS pipe M3 links to each other and as the current output signal end of the current sampling circuit of switch mosfet element; The sample rate current I05 of current output signal end output is through the signal of the more controlled on-off element first metal-oxide-semiconductor M1 of benchmark in the control chip.
The electric current I 01 that let flow is crossed the first metal-oxide-semiconductor M1 and the electric current I 02 that flows through the resistance R 0 that links to each other with the first metal-oxide-semiconductor M1 satisfy I01＞＞I03; I02＞＞I03; Then flow through the electric current I 01 and electric current I 02 approximately equal that flows through the resistance R 0 that links to each other with the first metal-oxide-semiconductor M1 of the first metal-oxide-semiconductor M1; I01 ≈ I02, the voltage V0=R0 * I01 on the sampling element R0;
I03=I04, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 are the identical coupling pipe of breadth length ratio, so the source voltage terminal of the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 satisfies Vs3=Vs4;
Voltage VR1=(I03+I05) * R1 on first resistance R 1; Voltage VR2=I04 * R2 on second resistance R 2; VR1-VR2=I02 * R0 (being the voltage on the resistance R 0), so (I03+I05) * R1-I04 * R2=I02 * R0, I03=I04, R1=R2, I01 ≈ I02 again; So I05 * R1=I02 * R0, I05=I01 * R0/R1.Through the current sampling circuit output of switch mosfet element and the electric current I 01 corresponding current signal I05 of the on-off element first metal-oxide-semiconductor M1, the sample rate current I05 of output is through the signal of the more controlled on-off element first metal-oxide-semiconductor M1 of benchmark in the control chip.
The current sampling circuit of above-mentioned switch mosfet element; When being applied to that external switch mosfet element carried out current sample, peripheral circuit need increase extra sampling element, is generally resistance; With Figure 1B is example; On sampling element R0, caused voltage loss owing to flow through the electric current I 01 of the first metal-oxide-semiconductor M1, the voltage on the resistance R 0 is I02 * R0, and its power attenuation is Pdis=I02 * R0 * I02=(I01)
2* R0; Usually the value of the electric current I 01 of the inflow on-off element first metal-oxide-semiconductor M1 is bigger, thereby has increased extra power attenuation.And when being applied to that built-in switch mosfet element carried out current sample, adopt the aluminum strip connection resistances as sampling element usually, though need not increase extra element.But built-in switch mosfet element receives process technology limit, and the conducting resistance of switch mosfet element is big, and efficient is low, and majority can only be used for the miniwatt product.The drive controlling chip and the switch mosfet element that adopt at present in addition often are discrete device, close the method that is encapsulated in a packaging body through encapsulation, and the switch mosfet element adopts the high performance MOSFET on-off element, therefore can improve the efficient of whole integrated circuit.But close encapsulation method because the restriction that is encapsulated is not suitable for increasing sampling element, therefore can't adopt the current sampling circuit of above-mentioned switch mosfet element.
Summary of the invention
The present invention will solve the deficiency of prior art, and a kind of clamper module switch mosfet element current Sampling techniques are provided, and utilizes the conducting resistance detection of switch mosfet element to flow through size of current wherein; And, improve the maximum admissible voltage difference of the sampling module first input end and second input end through increasing the clamper module, improved the operating voltage range of the current sampling circuit of switch mosfet element.
The conducting resistance Ron that itself exists when the present invention utilizes on-off element switch mosfet element conductive is as sampling element; When the switch mosfet element conductive, the electric current that flows through the switch mosfet element can produce voltage difference through conducting resistance Ron between first end of switch mosfet element and second end.
A kind of current sampling circuit of switch mosfet element comprises switch mosfet element and sampling module:
Described switch mosfet element is a P channel mosfet on-off element; First end of said on-off element and the first input end of sampling module link to each other; And as the current input signal end; Second end of said on-off element and second input end of sampling module link to each other; And as switch mosfet element current output signal end; The output terminal of said sampling module is as the sample rate current output signal end of the current sampling circuit of switch mosfet element, first end of said sampling module Direct Sampling switch mosfet element and the voltage difference of second end, and admissible maximum voltage difference is the withstand voltage between two input ends of sampling module between the first input end of said sampling module and second input end;
Said sampling module comprises the clamper module; Said clamper module increases the withstand voltage between the sampling module first input end and second input end; Blocking-up forms current path from the first input end end of sampling module to second input end, improve the operating voltage range of the current sampling circuit of switch mosfet element.
Described MOSFET current sampling circuit, a kind of concrete implementation is:
Said switch mosfet element is the P raceway groove first metal-oxide-semiconductor M1; First end of switch mosfet element 11 is the source end; Second end of switch mosfet element is a drain terminal, and the source end of the first metal-oxide-semiconductor M1 is connected the first input end of sampling module with substrate, and as the current input signal end; The drain terminal of the first metal-oxide-semiconductor M1 connects second input end of sampling module and as switch mosfet element current output signal end, the grid end of the first metal-oxide-semiconductor M1 is imported grid control signal;
Said sampling module comprises that clamper module that the second diode D2 of the first diode D1, N series connection of N series connection forms, first resistance R 1, second resistance R, 2, the three PMOS pipe M3, the 4th PMOS manage M4, the first constant current source I13, the second constant current source I14;
The forward end of the first diode D1 of N series connection and the source end of the first metal-oxide-semiconductor M1 link to each other with substrate; And as the current input signal end; The forward end of the second diode D2 of N series connection and the drain terminal of the first metal-oxide-semiconductor M1 link to each other; And as switch mosfet element current output signal end; Backward end and the end of first resistance R 1 of the first diode D1 of N series connection link to each other, and the backward end of N the second diode D2 that connects and an end of second resistance R 2 link to each other, and the source end that the other end of first resistance R 1 and the 3rd PMOS manage M3 links to each other with substrate and as the sample rate current output signal end; The other end of second resistance R 2 links to each other with source end, the substrate terminal of the 4th PMOS pipe M4; The grid of the grid of the drain terminal of the 3rd metal-oxide-semiconductor M3, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 links to each other with the first constant current source I13, and the drain terminal of the 4th metal-oxide-semiconductor M4 links to each other with the second constant current source I14.
Maximum admissible voltage difference is V between the first input end of said sampling module and second input end
DSMAX2:
V
DSMAX2=V
MAX1+ (I13+I15) * R1+I14 * R2+N * VF1+N * VD2=V
MAX1+ 2 * I13 * R1+I15 * R1+N * VF1+N * VD1 is wherein:
V
MAX1Leak in the source that is the 3rd metal-oxide-semiconductor M3, substrate terminal, and leak in the source of the 4th metal-oxide-semiconductor M4, can bear between the substrate terminal withstand voltage;
I13 is first constant current source;
I14 is second constant current source;
I15 is a sample rate current;
R1 is first resistance;
R2 is second resistance;
VF1 is the first diode D1 forward voltage drop;
VD1 is the first diode D1 breakdown reverse voltage;
The breakdown reverse voltage of the VD2 second diode D2;
N is equal to, or greater than 1 positive integer.
Above-mentioned MOSFET current sampling circuit, said N are 1 or 3.
Other a kind of concrete implementation of MOSFET current sampling circuit is:
Said switch mosfet element is the P raceway groove first metal-oxide-semiconductor M1; First end of switch mosfet element is the source end; Second end of switch mosfet element is a drain terminal, and the source end of the first metal-oxide-semiconductor M1 is connected the first input end of sampling module with substrate terminal, and as the current input signal end; The drain terminal of the first metal-oxide-semiconductor M1 connects second input end of sampling module and as switch mosfet element current output signal end, the grid end of the first metal-oxide-semiconductor M1 is imported grid control signal;
Said sampling module comprises clamper module, first resistance R 1, second resistance R 2 of second diode D2 composition of the first diode D1, N series connection of N series connection; The 3rd PMOS pipe M3, the 4th PMOS pipe M4, the first constant current source I13, the second constant current source I14; First resistance R 1 equals second resistance R 2; The 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 are the identical coupling pipe of breadth length ratio, and the first constant current source I13 equals the second constant current source I14;
One end of first resistance R 1 links to each other with substrate terminal with the source end of the first metal-oxide-semiconductor M1; And as the current input signal end; One end of second resistance R 2 links to each other with the drain terminal of the first metal-oxide-semiconductor M1 and as switch mosfet element current output signal end; The forward end of the first diode D1 of the other end of first resistance R 1 and N series connection links to each other and as the sample rate current output signal end of the current sampling circuit of switch mosfet element; The other end of second resistance R 2 links to each other with the forward end of the second diode D2 of N series connection; The backward end of the first diode D1 of N series connection links to each other with substrate with the source end that PMOS manages the 3rd metal-oxide-semiconductor M3; The backward end of the second diode D2 of N series connection links to each other with substrate with the source end of the 4th PMOS pipe M4, and the grid of the drain terminal of the 3rd metal-oxide-semiconductor M3, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 links to each other with the first constant current source I13, and the drain terminal of the 4th metal-oxide-semiconductor M4 links to each other with the second constant current source I14.
Above-mentioned MOSFET current sampling circuit, maximum admissible voltage difference is V between the first input end of said sampling module and second input end
DSMAX2:
V
DSMAX2=V
MAX1+ (I13+I15) * R1+I14 * R2+N * VF1+N * VD2=V
MAX1+ 2 * I13 * R1+I15 * R1+N * VF1+N * VD1 is wherein:
V
MAX1Leak in the source that is the 3rd metal-oxide-semiconductor M3, substrate terminal, and leak in the source of the 4th metal-oxide-semiconductor M4, can bear between the substrate terminal withstand voltage;
I13 is first constant current source;
I14 is second constant current source;
I15 is a sample rate current;
R1 is first resistance;
R2 is second resistance;
VF1 is the first diode D1 forward voltage drop;
VD1 is the first diode D1 breakdown reverse voltage;
The breakdown reverse voltage of the VD2 second diode D2;
N is equal to, or greater than 1 positive integer.
Said N is 1 or 3
Sampling techniques provided by the invention can Direct Sampling switch mosfet element first end and the voltage difference of second end, and the corresponding current signal of electric current of conversion output and on-off element.Compare prior art and need not sampling element, simultaneously also removed the power attenuation on the sampling element, particularly can be applied to the drive controlling chip and the switch mosfet element closes the integrated circuit of envelope.
Switch mosfet element current Sampling techniques provided by the invention, the voltage difference of current sample module Direct Sampling switch mosfet element input end and output terminal.Admissible maximum voltage difference is the withstand voltage between two input ends of sampling module between the first input end of sampling module and second input end.When high-pressure work; Owing to be operated in the switch mosfet element under the switching mode; Under off state, the voltage difference of input end and output terminal is very high, can surpass the withstand voltage between two input ends of sampling module; The sampling module first input end forms the electric leakage path to meeting between second input end, thereby the operating voltage range of the current sampling circuit of switch mosfet element is restricted.Therefore in the current sample module, increase the clamper module; Utilize the clamper function of the reverse voltage of diode to increase the withstand voltage between two input ends of sampling module; Blocking-up from the sampling module first input end to forming the electric leakage path second input end, thereby improve the operating voltage range of the current sampling circuit of switch mosfet element.
The invention has the beneficial effects as follows: the not only output and the corresponding current signal of electric current of on-off element, need not sampling element, the while has also been removed the power attenuation on the sampling element; And, improved the maximum admissible voltage difference of the sampling module first input end and second input end through the clamper module, improved the operating voltage range of the current sampling circuit of switch mosfet element.Particularly can solve the current sample problem of switch mosfet element that drive controlling chip and switch mosfet element close the integrated circuit of envelope.
Description of drawings:
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Figure 1A is the structural drawing of the current sampling circuit of conventional MOS FET on-off element.
Figure 1B is the concrete realization and the application drawing of the current sampling circuit of conventional MOS FET on-off element.
Fig. 2 A is the structural drawing of the current sampling circuit of the modified switch mosfet element of increase clamper module.
Fig. 2 B is the circuit diagram of first embodiment of the current sampling circuit of the modified switch mosfet element of increase clamper module.
Fig. 2 C is the circuit diagram of second embodiment of the current sampling circuit of the modified switch mosfet element of increase clamper module.
Fig. 2 D is the circuit diagram of the 3rd embodiment of current sampling circuit of the modified switch mosfet element of clamper module.
Fig. 2 E is the circuit diagram of the 4th embodiment of the current sampling circuit of the modified switch mosfet element of increase clamper module.
Embodiment
Below in conjunction with accompanying drawing content of the present invention is further specified.
Problem that increases for the current detection circuit power attenuation that solves conventional MOS FET on-off element and conventional MOS FET on-off element current detection circuit can't be applied to the problem that drive controlling chip and switch mosfet element close the integrated circuit of envelope; The invention provides the current sampling circuit of modified switch mosfet element; First end of Direct Sampling switch mosfet element and the voltage difference of second end, admissible maximum voltage difference is the withstand voltage between two input ends of sampling module between the first input end of sampling module and second input end.When high-pressure work; Owing to be operated in the switch mosfet element under the switching mode; Under switch mosfet element off state, first end of switch mosfet element and the voltage difference of second end are very high, can surpass the withstand voltage between the sampling module first input end and second input end; Cause the sampling module first input end to form current path, thereby the operating voltage range of the current sampling circuit of switch mosfet element is restricted to meeting between second input end.The present invention increases the clamper module in the current sample module; Utilize the clamper function of the reverse voltage of the diode in the clamper module to increase the withstand voltage between the sampling module first input end and second input end; The first input end of blocking-up sampling module forms current path between second input end, thereby improves the operating voltage range of the current sampling circuit of switch mosfet element.
Simultaneously; The conducting resistance Ron that itself exists during on-off element switch mosfet element conductive is as sampling element; When the switch mosfet element conductive, the electric current that flows through the switch mosfet element can produce voltage difference through conducting resistance Ron between first end of switch mosfet element and second end.And Sampling techniques provided by the invention, can Direct Sampling switch mosfet element first end and the voltage difference of second end, and the corresponding current signal of electric current of conversion output and switch mosfet element.Compare prior art and need not sampling element, simultaneously also removed the power attenuation on the sampling element, particularly can be applied to the drive controlling chip and the switch mosfet element closes the integrated circuit of envelope.
Shown in Fig. 2 A, the current sampling circuit of switch mosfet element comprises switch mosfet element 11 and sampling module 13,
Described switch mosfet element 11 is a P channel mosfet on-off element; First end of said on-off element and the first input end of sampling module link to each other; And as the current input signal end, second end of said on-off element and second input end of sampling module link to each other, and as switch mosfet element current output signal end; The output terminal of said sampling module is as the sample rate current output signal end of the current sampling circuit of switch mosfet element, and said sampling module comprises the clamper module; First end of said sampling module Direct Sampling switch mosfet element and the voltage difference of second end; Admissible maximum voltage difference is the withstand voltage between two input ends of sampling module between the first input end of said sampling module and second input end; Said clamper module increases the withstand voltage between the sampling module first input end and second input end; Blocking-up forms current path from the first input end end of sampling module to second input end, improve the operating voltage range of the current sampling circuit of switch mosfet element.
Fig. 2 B is as a kind of circuit diagram of first embodiment of the current sampling circuit of the modified switch mosfet element that increases the clamper module shown in Fig. 2 A:
Said switch mosfet element 11 is the P raceway groove first metal-oxide-semiconductor M1; First end of switch mosfet element 11 is the source end; Second end of switch mosfet element 11 is a drain terminal, and the source end of the first metal-oxide-semiconductor M1 is connected the first input end of sampling module 13 with substrate, and as the current input signal end; The drain terminal of the first metal-oxide-semiconductor M1 connects second input end of sampling module 13 and as switch mosfet element current output signal end, the grid end of the first metal-oxide-semiconductor M1 is imported grid control signal;
Said sampling module 13 comprises clamper module that the first diode D1, the second diode D2 form, first resistance R 1, second resistance R 2; The 3rd PMOS pipe M3, the 4th PMOS pipe M4, the first constant current source I13, the second constant current source I14; First resistance R 1 equals second resistance R 2; The 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 are the identical coupling pipe of breadth length ratio, and the first constant current source I13 equals the second constant current source I14;
The forward end of the first diode D1 links to each other with substrate with the source end of the first metal-oxide-semiconductor M1; And as the current input signal end; The forward end of the second diode D2 links to each other with the drain terminal of the first metal-oxide-semiconductor M1; And as switch mosfet element current output signal end; The backward end of the first diode D1 links to each other with an end of first resistance R 1, and the backward end of the second diode D2 links to each other with an end of second resistance R 2, and the source end of the other end of first resistance R 1 and the 3rd PMOS pipe M3 links to each other with substrate and as the sample rate current output signal end; The other end of second resistance R 2 links to each other with source end, the substrate terminal of the 4th PMOS pipe M4; The grid of the grid of the drain terminal of the 3rd metal-oxide-semiconductor M3, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 links to each other with the first constant current source I13, and the drain terminal of the 4th metal-oxide-semiconductor M4 links to each other with the second constant current source I14.The grid control signal of the controlled switch mosfet element of sample rate current I15 through sample rate current output signal end output.
Let flow is crossed the electric current I 12 of the first metal-oxide-semiconductor M1 and electric current I 11 approximately equals of current input signal end input; I12 ≈ I11; Its conducting resistance is Ron during the first metal-oxide-semiconductor M1 conducting; Then voltage Vds=Ron * I12=Ron * I11 is leaked in the first metal-oxide-semiconductor M1 source during conducting, then during the first metal-oxide-semiconductor M1 conducting:
I13=I14, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 are the identical coupling pipe of breadth length ratio, so the source voltage terminal Vs4 of the source voltage terminal Vs3 of the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 satisfies Vs3=Vs4;
The forward current that flows through the first diode D1, the second diode D2 is respectively the first constant current source I13, the second constant current source I14, establishes its forward voltage drop VF1=VF2;
Voltage VR1=(I13+I15) * R1 on first resistance R 1; Voltage VR2=I14 * R2 on second resistance R 2; (VR1+VF1) (VR2+VF2)=Vds=Ron * I11 (promptly voltage is leaked in the first metal-oxide-semiconductor M1 source), so [(I13+I15) * R1+VF1]-[I14 * R2+VF2]=Ron * I11, I13=I14, R1=R2, VF1=VF2 again; So I15 * R1=I11 * Ron, I15=I11 * Ron/R1.
For Fig. 2 B, suppose that leak in the source of the 3rd metal-oxide-semiconductor M3 in the sampling module, substrate terminal, and leak in the source of the 4th metal-oxide-semiconductor M4, can bear between the substrate terminal withstand voltagely be V
MAX1First resistance R 1 and second resistance R 2 do not receive withstand voltage influence; First diode D1 in the clamper module and the forward voltage drop VF1=VF2 of the second diode D2; Suppose its breakdown reverse voltage VD1=VD2, then maximum admissible voltage difference is between the first input end of said sampling module and second input end:
V
DSMAX2＝V
MAX1+(I13+I15)×R1+I14×R2+VF1+VD2＝V
MAX1+2×I13×R1+I15×R1+VF1+VD1
Requirement according to the operating voltage range of current sampling circuit; The clamper module can be formed with N the identical second diode D2 for N the first identical diode D1, and then maximum admissible voltage difference is between the first input end of said sampling module and second input end:
V
DSMAX2=V
MAX1+ (I13+I15) * R1+I14 * R2+N * VF1+N * VD2=V
MAX1+ 2 * I13 * R1+I15 * R1+N * VF1+N * VD1 wherein N is equal to, or greater than 1 positive integer.
Fig. 2 C is as a kind of circuit diagram among second embodiment of the current sampling circuit of the modified switch mosfet element that increases the clamper module shown in Fig. 2 A; A kind of conversion figure for the synoptic diagram of the current sampling circuit of the modified switch mosfet element that increases the clamper module shown in Fig. 2 B; Being about to the clamper module further is made up of 3 identical second diode D2 with 3 of the first identical diode D1; Further improve the withstand voltage between two input ends of sampling module, further improved the operating voltage range of current sampling circuit.
Leak in the source of supposing the 3rd metal-oxide-semiconductor M3 in the sampling module, substrate terminal, and leak in the source of the 4th metal-oxide-semiconductor M4, can bear between the substrate terminal withstand voltagely be V
MAX1First resistance R 1 and second resistance R 2 do not receive withstand voltage influence; First diode D1 of clamper module and the forward voltage drop VF1=VF2 of the second diode D2; Suppose its breakdown reverse voltage VD1=VD2, then maximum admissible voltage difference is between the first input end of said sampling module and second input end:
V
DSMAX2＝V
MAX1+(I13+I15)×R1+I14×R2+3×VF1+3×VD2＝V
MAX1+2×I13×R1+I15×R1+3×VF1+3×VD1
Compare with Fig. 2 B, the withstand voltage between two input ends of sampling module has increased V
DSMAX2-V
DSMAX2=2 * VF1+2 * VD1.
Fig. 2 D is as a kind of circuit diagram among the 3rd embodiment of the current sampling circuit of the modified switch mosfet element that increases the clamper module shown in Fig. 2 A; A kind of conversion figure for the synoptic diagram of the current sampling circuit of the modified switch mosfet element that increases the clamper module shown in Fig. 2 B promptly changes the position that the clamper module connects:
Said switch mosfet element 11 is the P raceway groove first metal-oxide-semiconductor M1; First end of switch mosfet element 11 is the source end; Second end of switch mosfet element 11 is a drain terminal, and the source end of the first metal-oxide-semiconductor M1 is connected the first input end of sampling module 13 with substrate terminal, and as the current input signal end; The drain terminal of the first metal-oxide-semiconductor M1 connects second input end of sampling module 13 and as switch mosfet element current output signal end I12, the grid end of the first metal-oxide-semiconductor M1 is imported grid control signal;
Said sampling module 13 comprises clamper module that the first diode D1, the second diode D2 form, first resistance R 1, second resistance R 2; The 3rd PMOS pipe M3, the 4th PMOS pipe M4, the first constant current source I13, the second constant current source I14; First resistance R 1 equals second resistance R 2; The 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 are the identical coupling pipe of breadth length ratio, and the first constant current source I13 equals the second constant current source I14;
One end of first resistance R 1 links to each other with substrate terminal with the source end of the first metal-oxide-semiconductor M1; And as the current input signal end; One end of second resistance R 2 links to each other with the drain terminal of the first metal-oxide-semiconductor M1 and as switch mosfet element current output signal end; The forward end of the other end of first resistance R 1 and the first diode D1 links to each other and as the sample rate current output signal end of the current sampling circuit of switch mosfet element; The other end of second resistance R 2 links to each other with the forward end of the second diode D2; The backward end of the first diode D1 links to each other with substrate with the source end that PMOS manages the 3rd metal-oxide-semiconductor M3; The backward end of the second diode D2 links to each other with substrate with the source end of the 4th PMOS pipe M4, and the grid of the drain terminal of the 3rd metal-oxide-semiconductor M3, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 links to each other with the first constant current source I13, and the drain terminal of the 4th metal-oxide-semiconductor M4 links to each other with the second constant current source I14.The grid control signal of the controlled switch mosfet element of sample rate current I15 through sample rate current output signal end output.
Fig. 2 E is as a kind of circuit diagram among the 4th embodiment of the current sampling circuit of the modified switch mosfet element that increases the clamper module shown in Fig. 2 A; A kind of conversion figure for the synoptic diagram of the current sampling circuit of the modified switch mosfet element that increases the clamper module shown in Fig. 2 D; Be about to the clamper module and further form, further improved the operating voltage range of current sampling circuit by 3 the first identical diode D1, second diode D2 identical with 3.
As possibility, said clamper modular structure further is made up of with N the identical second diode D2 N the first identical diode D1, and wherein N is equal to, or greater than 1 positive integer, and the numerical value of its N is confirmed according to the requirement of circuit design.
In this case, maximum admissible voltage difference is V between the first input end of said sampling module and second input end
DSMAX2:
V
DSMAX2=V
MAX1+ (I13+I15) * R1+I14 * R2+N * VF1+N * VD2=V
MAX1+ 2 * I13 * R1+I15 * R1+N * VF1+N * VD1 is wherein:
V
MAX1Leak in the source that is the 3rd metal-oxide-semiconductor M3, substrate terminal, and leak in the source of the 4th metal-oxide-semiconductor M4, can bear between the substrate terminal withstand voltage;
I13 is first constant current source;
I14 is second constant current source;
I15 is a sample rate current;
R1 is first resistance;
R2 is second resistance;
VF1 is the first diode D1 forward voltage drop;
VD1 is the first diode D1 breakdown reverse voltage;
The breakdown reverse voltage of the VD2 second diode D2;
N is equal to, or greater than 1 positive integer.
The invention discloses a kind of current sampling circuit of switch mosfet element, and illustrate and describe embodiment of the present invention and effect.What should be understood that is; The foregoing description is just to explanation of the present invention; Rather than limitation of the present invention, any innovation and creation that do not exceed in the connotation scope of the present invention include but not limited to the structure to clamper module samples module; The modification of the connected mode of diode, to the replacement of the change of the local structure of circuit and other unsubstantialities or modification etc., all fall within the protection domain of the present invention.
Claims (9)
1. the current sampling circuit of a switch mosfet element is characterized in that, comprises switch mosfet element and sampling module:
Described switch mosfet element is a P channel mosfet on-off element; First end of said on-off element and the first input end of sampling module link to each other; And as the current input signal end; Second end of said on-off element and second input end of sampling module link to each other; And as switch mosfet element current output signal end; The output terminal of said sampling module is as the sample rate current output signal end of the current sampling circuit of switch mosfet element, first end of said sampling module Direct Sampling switch mosfet element and the voltage difference of second end, and admissible maximum voltage difference is the withstand voltage between two input ends of sampling module between the first input end of said sampling module and second input end;
Said sampling module comprises the clamper module; Said clamper module increases the withstand voltage between the sampling module first input end and second input end; Blocking-up forms current path from the first input end end of sampling module to second input end, improve the operating voltage range of the current sampling circuit of switch mosfet element.
2. MOSFET current sampling circuit as claimed in claim 1 is characterized in that,
Said switch mosfet element is the P raceway groove first metal-oxide-semiconductor M1; First end of switch mosfet element 11 is the source end; Second end of switch mosfet element is a drain terminal, and the source end of the first metal-oxide-semiconductor M1 is connected the first input end of sampling module with substrate, and as the current input signal end; The drain terminal of the first metal-oxide-semiconductor M1 connects second input end of sampling module and as switch mosfet element current output signal end, the grid end of the first metal-oxide-semiconductor M1 is imported grid control signal;
Said sampling module comprises that clamper module that the second diode D2 of the first diode D1, N series connection of N series connection forms, first resistance R 1, second resistance R, 2, the three PMOS pipe M3, the 4th PMOS manage M4, the first constant current source I13, the second constant current source I14;
The forward end of the first diode D1 of N series connection and the source end of the first metal-oxide-semiconductor M1 link to each other with substrate; And as the current input signal end; The forward end of the second diode D2 of N series connection and the drain terminal of the first metal-oxide-semiconductor M1 link to each other; And as switch mosfet element current output signal end; Backward end and the end of first resistance R 1 of the first diode D1 of N series connection link to each other, and the backward end of N the second diode D2 that connects and an end of second resistance R 2 link to each other, and the source end that the other end of first resistance R 1 and the 3rd PMOS manage M3 links to each other with substrate and as the sample rate current output signal end; The other end of second resistance R 2 links to each other with source end, the substrate terminal of the 4th PMOS pipe M4; The grid of the grid of the drain terminal of the 3rd metal-oxide-semiconductor M3, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 links to each other with the first constant current source I13, and the drain terminal of the 4th metal-oxide-semiconductor M4 links to each other with the second constant current source I14.
3. MOSFET current sampling circuit as claimed in claim 2 is characterized in that, maximum admissible voltage difference is V between the first input end of said sampling module and second input end
DSMAX2:
V
DSMAX2=V
MAX1+ (I13+I15) * R1+I14 * R2+N * VF1+N * VD2=V
MAX1+ 2 * I13 * R1+I15 * R1+N * VF1+N * VD1 is wherein:
V
MAX1Leak in the source that is the 3rd metal-oxide-semiconductor M3, substrate terminal, and leak in the source of the 4th metal-oxide-semiconductor M4, can bear between the substrate terminal withstand voltage;
I13 is first constant current source;
I14 is second constant current source;
I15 is a sample rate current;
R1 is first resistance;
R2 is second resistance;
VF1 is the first diode D1 forward voltage drop;
VD1 is the first diode D1 breakdown reverse voltage;
The breakdown reverse voltage of the VD2 second diode D2;
N is equal to, or greater than 1 positive integer.
4. like claim 2 or 3 described MOSFET current sampling circuits, it is characterized in that said N is 1.
5. like claim 2 or 3 described MOSFET current sampling circuits, it is characterized in that said N is 3.
6. MOSFET current sampling circuit as claimed in claim 1; It is characterized in that; Said switch mosfet element is the P raceway groove first metal-oxide-semiconductor M1, and first end of switch mosfet element is the source end, and second end of switch mosfet element is a drain terminal; The source end of the first metal-oxide-semiconductor M1 is connected the first input end of sampling module with substrate terminal; And as the current input signal end, the drain terminal of the first metal-oxide-semiconductor M1 connects second input end of sampling module and as switch mosfet element current output signal end, the grid end of the first metal-oxide-semiconductor M1 is imported grid control signal;
Said sampling module comprises clamper module, first resistance R 1, second resistance R 2 of second diode D2 composition of the first diode D1, N series connection of N series connection; The 3rd PMOS pipe M3, the 4th PMOS pipe M4, the first constant current source I13, the second constant current source I14; First resistance R 1 equals second resistance R 2; The 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 are the identical coupling pipe of breadth length ratio, and the first constant current source I13 equals the second constant current source I14;
One end of first resistance R 1 links to each other with substrate terminal with the source end of the first metal-oxide-semiconductor M1; And as the current input signal end; One end of second resistance R 2 links to each other with the drain terminal of the first metal-oxide-semiconductor M1 and as switch mosfet element current output signal end; The forward end of the first diode D1 of the other end of first resistance R 1 and N series connection links to each other and as the sample rate current output signal end of the current sampling circuit of switch mosfet element; The other end of second resistance R 2 links to each other with the forward end of the second diode D2 of N series connection; The backward end of the first diode D1 of N series connection links to each other with substrate with the source end that PMOS manages the 3rd metal-oxide-semiconductor M3; The backward end of the second diode D2 of N series connection links to each other with substrate with the source end of the 4th PMOS pipe M4, and the grid of the drain terminal of the 3rd metal-oxide-semiconductor M3, the 3rd metal-oxide-semiconductor M3, the 4th metal-oxide-semiconductor M4 links to each other with the first constant current source I13, and the drain terminal of the 4th metal-oxide-semiconductor M4 links to each other with the second constant current source I14.
7. MOSFET current sampling circuit as claimed in claim 6 is characterized in that, maximum admissible voltage difference is V between the first input end of said sampling module and second input end
DSMAX2:
V
DSMAX2=V
MAX1+ (I13+I15) * R1+I14 * R2+N * VF1+N * VD2=V
MAX1+ 2 * I13 * R1+I15 * R1+N * VF1+N * VD1 is wherein:
V
MAX1Leak in the source that is the 3rd metal-oxide-semiconductor M3, substrate terminal, and leak in the source of the 4th metal-oxide-semiconductor M4, can bear between the substrate terminal withstand voltage;
I13 is first constant current source;
I14 is second constant current source;
I15 is a sample rate current;
R1 is first resistance;
R2 is second resistance;
VF1 is the first diode D1 forward voltage drop;
VD1 is the first diode D1 breakdown reverse voltage;
The breakdown reverse voltage of the VD2 second diode D2;
N is equal to, or greater than 1 positive integer.
8. like claim 6 or 7 described MOSFET current sampling circuits, it is characterized in that said N is 1.
9. like claim 6 or 7 described MOSFET current sampling circuits, it is characterized in that said N is 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110391321.5A CN102495265B (en) | 2011-11-30 | 2011-11-30 | Current sampling circuit of metal oxide semiconductor field effect transistor (MOSFET) switch element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110391321.5A CN102495265B (en) | 2011-11-30 | 2011-11-30 | Current sampling circuit of metal oxide semiconductor field effect transistor (MOSFET) switch element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102495265A true CN102495265A (en) | 2012-06-13 |
| CN102495265B CN102495265B (en) | 2014-05-21 |
Family
ID=46187106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110391321.5A Active CN102495265B (en) | 2011-11-30 | 2011-11-30 | Current sampling circuit of metal oxide semiconductor field effect transistor (MOSFET) switch element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102495265B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104155498A (en) * | 2013-05-13 | 2014-11-19 | 苏州工业园区新宏博通讯科技有限公司 | High-voltage hot-swap sampling circuit |
| CN104218929A (en) * | 2013-05-30 | 2014-12-17 | 快捷半导体(苏州)有限公司 | True reverse current blocking circuit, true reverse current blocking method, load switch and portable device |
| CN104764924A (en) * | 2015-03-26 | 2015-07-08 | 深圳市英特源电子有限公司 | High-voltage MOSFET current sampling circuit |
| CN106443128A (en) * | 2016-09-23 | 2017-02-22 | 中国电子科技集团公司第四十研究所 | FA-level weak current signal measurement circuit |
| CN106950414A (en) * | 2017-02-24 | 2017-07-14 | 深圳陆巡科技有限公司 | Metal-oxide-semiconductor current sampling circuit and push-pull circuit |
| CN109696578A (en) * | 2019-01-22 | 2019-04-30 | 东莞市长工微电子有限公司 | A kind of current detection circuit and method |
| CN110244095A (en) * | 2019-07-19 | 2019-09-17 | 电子科技大学 | A kind of high speed current sampling circuit of super low-power consumption |
| CN111426928A (en) * | 2018-12-24 | 2020-07-17 | 东南大学 | Dynamic resistance test circuit for gallium nitride device |
| CN112782635A (en) * | 2021-01-07 | 2021-05-11 | 广东省肇庆市质量计量监督检测所 | Winding wire breakdown voltage tester calibrating device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005031032A (en) * | 2003-07-11 | 2005-02-03 | Mitsutoyo Corp | Current measuring circuit and constant-current circuit using it |
| CN101629973A (en) * | 2009-06-09 | 2010-01-20 | 中国人民解放军国防科学技术大学 | High-precision current sampling circuit without operational amplifier for low voltage power supply |
| CN102156211A (en) * | 2010-12-21 | 2011-08-17 | 成都成电硅海科技股份有限公司 | Full-CMOS (complementary metal-oxide-semiconductor transistor) accurate current sampling circuit |
| CN202383186U (en) * | 2011-11-30 | 2012-08-15 | 杭州士兰微电子股份有限公司 | Current sampling circuit of MOSFET switch component |
-
2011
- 2011-11-30 CN CN201110391321.5A patent/CN102495265B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005031032A (en) * | 2003-07-11 | 2005-02-03 | Mitsutoyo Corp | Current measuring circuit and constant-current circuit using it |
| CN101629973A (en) * | 2009-06-09 | 2010-01-20 | 中国人民解放军国防科学技术大学 | High-precision current sampling circuit without operational amplifier for low voltage power supply |
| CN102156211A (en) * | 2010-12-21 | 2011-08-17 | 成都成电硅海科技股份有限公司 | Full-CMOS (complementary metal-oxide-semiconductor transistor) accurate current sampling circuit |
| CN202383186U (en) * | 2011-11-30 | 2012-08-15 | 杭州士兰微电子股份有限公司 | Current sampling circuit of MOSFET switch component |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104155498A (en) * | 2013-05-13 | 2014-11-19 | 苏州工业园区新宏博通讯科技有限公司 | High-voltage hot-swap sampling circuit |
| CN104218929A (en) * | 2013-05-30 | 2014-12-17 | 快捷半导体(苏州)有限公司 | True reverse current blocking circuit, true reverse current blocking method, load switch and portable device |
| CN104764924A (en) * | 2015-03-26 | 2015-07-08 | 深圳市英特源电子有限公司 | High-voltage MOSFET current sampling circuit |
| CN104764924B (en) * | 2015-03-26 | 2018-01-09 | 深圳市英特源电子有限公司 | High-voltage MOSFET current sampling circuit |
| CN106443128A (en) * | 2016-09-23 | 2017-02-22 | 中国电子科技集团公司第四十研究所 | FA-level weak current signal measurement circuit |
| CN106443128B (en) * | 2016-09-23 | 2019-06-18 | 中国电子科技集团公司第四十一研究所 | A kind of femto-ampere grade low current signal measuring circuit |
| CN106950414A (en) * | 2017-02-24 | 2017-07-14 | 深圳陆巡科技有限公司 | Metal-oxide-semiconductor current sampling circuit and push-pull circuit |
| CN106950414B (en) * | 2017-02-24 | 2020-11-17 | 深圳陆巡科技有限公司 | MOS tube current sampling circuit and push-pull circuit |
| CN111426928A (en) * | 2018-12-24 | 2020-07-17 | 东南大学 | Dynamic resistance test circuit for gallium nitride device |
| CN109696578A (en) * | 2019-01-22 | 2019-04-30 | 东莞市长工微电子有限公司 | A kind of current detection circuit and method |
| CN110244095A (en) * | 2019-07-19 | 2019-09-17 | 电子科技大学 | A kind of high speed current sampling circuit of super low-power consumption |
| CN110244095B (en) * | 2019-07-19 | 2021-03-19 | 电子科技大学 | High-speed current sampling circuit with ultralow power consumption |
| CN112782635A (en) * | 2021-01-07 | 2021-05-11 | 广东省肇庆市质量计量监督检测所 | Winding wire breakdown voltage tester calibrating device |
| CN112782635B (en) * | 2021-01-07 | 2023-05-26 | 广东省肇庆市质量计量监督检测所 | Winding wire breakdown voltage tester calibrating device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102495265B (en) | 2014-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102495265B (en) | Current sampling circuit of metal oxide semiconductor field effect transistor (MOSFET) switch element | |
| CN202383186U (en) | Current sampling circuit of MOSFET switch component | |
| US20060062032A1 (en) | Cascoded rectifier | |
| CN101997526B (en) | Power tube circuit structure capable of preventing current from flowing backwards | |
| CN114421946B (en) | Direct drive circuit of depletion type power device with low reverse conduction voltage drop | |
| CN101222218B (en) | Differential pressure controllable switch | |
| CN105049018B (en) | A kind of New Solid relay | |
| WO2022161334A1 (en) | Electronic device and control method therefor | |
| CN101345520B (en) | Anti-back flow circuit | |
| CN106533144B (en) | Anti-reverse and current flowing backwards circuit | |
| CN104638959A (en) | Neutral point clamped (NPC) converter for use in power module, and power module incorporating same | |
| CN101350613A (en) | Electronic switch | |
| CN206331079U (en) | A kind of snowslide test circuit of the two-way test of energy | |
| CN102291022A (en) | Synchronous rectifying circuit | |
| CN101153880A (en) | Negative voltage detector | |
| CN202652172U (en) | Analog switch circuit structure | |
| CN101840908A (en) | Wide-input voltage range zero-leakage current input pull-up circuit | |
| CN101783666A (en) | Reinforced-depletion-mode part combination switch circuit capable of being reliably turned off | |
| CN102738781A (en) | Overvoltage protection circuit, IC chip and overvoltage protection method | |
| CN103023470A (en) | Three-electrode one-way conduction field-effect tube | |
| CN101719764A (en) | Level switching circuit realized based on high-voltage double-diffused metal oxide semiconductor (DMOS) | |
| CN201956998U (en) | Level shifter circuit based on monolithic integration process of manufacturing bipolar transistor, complementary metal oxide semiconductor (CMOS) device and double-diffusion metal oxide semiconductor (DMOS) device on identical chip | |
| CN112462131B (en) | Mains supply zero-crossing detection circuit and non-isolated power supply system using same | |
| CN114421745A (en) | Depletion type power circuit and cascade type leakage current matching circuit | |
| CN208623550U (en) | A kind of switching-on and switching-off state detection circuit for ground wire BUCK type Switching Power Supply of floating |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |