CN102490279A

CN102490279A - X-ray diffraction oriented cutting method for wire cutting crystal

Info

Publication number: CN102490279A
Application number: CN2011103895664A
Authority: CN
Inventors: 陈屹立; 荆旭华
Original assignee: DONGFANG ELECTRIC EMEI SEMICONDUCTOR MATERIAL CO LTD
Current assignee: Emei Semiconductor Material Institute
Priority date: 2011-11-30
Filing date: 2011-11-30
Publication date: 2012-06-13
Anticipated expiration: 2031-11-30
Also published as: CN102490279B

Abstract

The invention discloses an X-ray diffraction oriented cutting method for a wire cutting crystal and belongs to the field of crystal processing. The X-ray diffraction oriented cutting method comprises the following steps of: rotating a crystal arranged on an X-ray diffraction instrument platform for finding to determine a 0-degree diffraction angle; after determination, keeping the crystal unmovable and making a horizontal axis Z at the position of the end face of the crystal, which passes through the center, wherein the horizontal axis Z is a bonding shaft Z; measuring a crystal orientation deviation angle alpha in a direction perpendicular to the bonding shaft Z; determining a lateral deviation direction relative to the bonding shaft Z and marking the lateral deviation direction; setting a horizontal straight line as a standard line and keeping the vertical direction of the bonding shaft Z, wherein a central axis of the crystal is positioned at the left/right side according to the lateral deviation direction; adjusting a horizontal included angle alpha between the central axis of the crystal and the standard line; and fixing the crystal and carrying machining cutting along the direction of the standard line. The invention provides an oriented cutting method. According to the direction cutting method, a plurality of wire cutting machines and inner circle cutting machines can share one set of direction equipment by using a traditional X-ray diffraction orientating instrument, thus expenses of the equipment are greatly reduced.

Description

Line sliced crystal X-ray diffraction oriented cutting method

Technical field

The invention belongs to field of crystal processing, relate in particular to oriented cutting method.

Background technology

Directed and the interior circle cutting of line cutting is directed different; Interior circle cutting orientation can be carried out bidimensional at vertical, horizontal both direction and regulated; Line cutting orientation then can only be regulated in level side, and can not downcut sheet repetition measurement afterwards, especially the crystal orientation is required than higher crystal; Very easily produce mistake and deviation, and the crystal orientation is departed from and is exceeded requirement and will cause whole crystal to be scrapped.For this reason, wire cutting machine producer is that every wire cutting machine has been equipped with special-purpose orientation and conditioning equipment (price up to 300,000 dollars about), on crystal, crystal crystal orientation irrelevance is measured and is adjusted during machine.Because this supporting directed cutter sweep expense is high; Can realize the orientation cutting of crystal on wire cutting machine with existing independent orientation equipment; And can reach many wire cutting machines and the shared cover orientation equipment of inner circle cutting machine, just become anxious problem to be solved.

Summary of the invention

The technical problem that the present invention will solve is: to the problem that prior art exists, propose a kind of oriented cutting method that utilizes existing X-ray diffraction direction finder to realize many wire cutting machines and the shared cover orientation equipment of inner circle cutting machine, significantly reduce cost of equipment.

The object of the invention realizes through following technical proposals:

A kind of line sliced crystal X-ray diffraction oriented cutting method may further comprise the steps successively:

A) 0 ° of angle of diffraction is sought, confirmed to the crystal that is placed on the X-ray diffractometer platform of rotation, confirms that the back keeps that crystal is motionless to be crossed the center at crystal end-face and make a trunnion axis Z, and this axle is bonding axle Z;

B) measure crystal orientation deviation angle α with bonding axle Z vertical direction, confirm left and right deviation direction and the mark of its bonding relatively axle Z;

C) establishing a horizontal linear is normal line; Keep bonding axle Z vertical direction; And the crystal axis is positioned at a normal line left side/right side according to above-mentioned left and right deviation direction, and adjustment crystal axis and normal line horizontal sextant angle are α, and fixed crystal is also pressed machine cutting on the normal line direction.

As optimal way; The said B step is specially: after measuring the crystal orientation deviation angle α with bonding axle Z vertical direction; Draw radius and irrelevance α mark in this direction of crystal end-face, rotating crystal vertically can be confirmed the left and right deviation direction of its bonding relatively axle Z thus to bonding axle Z again.

As optimal way; The said C step is specially: at first crystal vertically is bonded in cuboid by bonding axle Z direction and cuts on the layer; The crystal axis is with to cut the long limit of layer parallel, is that normal line measures irrelevance α with inclinometer by the crystal offset direction on cuboid metal supporting plate top with its long limit then, draws a linear mark; It is cut layer long edge this linear mark and is bonded on the metal supporting plate with bonding crystal again, and cutting afterwards promptly is available on the machine.

Beneficial effect of the present invention: utilize existing laser locator can realize the oriented cutting method of many wire cutting machines and the shared cover orientation equipment of inner circle cutting machine, significantly reduce cost of equipment, while method is simple to operation, has improved operating efficiency.This craft precision is very high! ≦ 15 '), be applicable to the crystal orientation Yao Qiu ≦ 30 '.

Description of drawings

Fig. 1 is the crystal end-face mark sketch map of embodiment 1;

Fig. 2 is the metal support board structure sketch map of embodiment 1;

Fig. 3 is the user mode sketch map of embodiment 1;

Fig. 4 is the crystal end-face mark sketch map of embodiment 2;

Fig. 5 is the user mode sketch map of embodiment 2;

Wherein 1 for crystal, 11 for crystal end-face, 2 for radius, 3 for cut layer, 31 for cut a layer long limit, 4 be supporting plate, 41 for supporting plate length limit, 5 be linear mark.

The specific embodiment

Following non-limiting examples is used to explain the present invention

Embodiment 1:

A) 0 ° of angle of diffraction is sought, confirmed to the crystal 1 that is placed on the X-ray diffractometer platform of rotation, confirms that the back keeps that crystal 1 is motionless to be crossed the center at crystal end-face 11 and make a trunnion axis Z, and this axle is bonding axle Z;

B) as shown in Figure 1; After measuring the crystal orientation deviation angle α with bonding axle Z vertical direction; Its irrelevance α=3 °;

Draw radius

2 and 3 ° of marks of irrelevance in these directions of crystal end-face 11, again rotating crystal 1 vertically can confirm its bonding relatively Z thus to bonding axle Z offset direction for to the right, as shown in Figure 3;

C) as shown in Figure 3; At first crystal 1 vertically being bonded in cuboid by bonding axle Z direction cuts on the layer 3; Cutting layer 3 can be that resin, pottery, graphite etc. are processed, and crystal 1 axis is with to cut layer 3 long limit 31 parallel, and growing limit 41 on cuboid metal supporting plate 4 tops with it then is that normal line measures 3 ° of irrelevances with inclinometer by the crystal offset direction; Draw a linear mark 5; Promptly depart from 3 ° to the right and draw straight lines with long limit, a left side, again will bonding crystal 1 its cut layers 3 and grow limits 31 and be bonded on the metal supporting plate 4 along this linear mark 5, as shown in Figure 2; This moment, the crystal axis was positioned at 3 ° of normal line right side and deviation angles according to above-mentioned right avertence from direction, fixed crystal 1 and by machine cutting on 41 directions of long limit.

Embodiment 2:

B) as shown in Figure 4; After measuring the crystal orientation deviation angle α with bonding axle Z vertical direction; Its irrelevance α=3 °;

Draw radius

2 and 3 ° of marks of irrelevance in these directions of crystal end-face 11, again rotating crystal 1 vertically can confirm its bonding relatively Z thus to bonding axle Z offset direction for left;

C) as shown in Figure 5; At first crystal 1 vertically being bonded in cuboid by bonding axle Z direction cuts on the layer 3; Cutting layer 3 can be that resin, pottery, graphite etc. are processed; Crystal 1 axis is with to cut layer 3 long limit 31 parallel, is that normal line measures 3 ° of irrelevances with inclinometer by the crystal offset direction on cuboid metal supporting plate 4 tops with its long limit 41 then, draws a linear mark 5; Promptly depart from 3 ° left and draw straight line with long limit, the right side; It is cut layer 3 a long limit 31 and is bonded on the metal supporting plate 4 along this linear mark 5 with bonding crystal 1 again, and this moment, the crystal axis was positioned at 3 ° of normal line left side and deviation angles according to above-mentioned left avertence from direction, fixed crystal 1 and by machine cutting on 41 directions of long limit.

The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.

Claims

1. line sliced crystal X-ray diffraction oriented cutting method is characterized in that may further comprise the steps successively:

2. line sliced crystal laser oriented cutting method as claimed in claim 1; It is characterized in that: the said B step is specially: after measuring the crystal orientation deviation angle α with bonding axle Z vertical direction; Draw radius and irrelevance α mark in this direction of crystal end-face, rotating crystal vertically can be confirmed the left and right deviation direction of its bonding relatively axle Z thus to bonding axle Z again.

3. according to claim 1 or claim 2 line sliced crystal laser oriented cutting method; It is characterized in that: the said C step is specially: at first crystal vertically is bonded in cuboid by bonding axle Z direction and cuts on the layer; The crystal axis with cut the layer long limit parallel; Growing limit on cuboid metal supporting plate top with it then is that normal line measures irrelevance α with inclinometer by the crystal offset direction; Draw a linear mark, it is cut layer long edge this linear mark and is bonded on the metal supporting plate with bonding crystal again, and cutting afterwards promptly is available on the machine.