CN102479786A - Light emitting module and alternating current light emitting device - Google Patents
Light emitting module and alternating current light emitting device Download PDFInfo
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- CN102479786A CN102479786A CN2010105681311A CN201010568131A CN102479786A CN 102479786 A CN102479786 A CN 102479786A CN 2010105681311 A CN2010105681311 A CN 2010105681311A CN 201010568131 A CN201010568131 A CN 201010568131A CN 102479786 A CN102479786 A CN 102479786A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
The invention provides a light emitting module and an alternating current light emitting device. The light emitting module comprises a heat radiating substrate, a plurality of insulating layers, a plurality of light reflecting layers, a plurality of conducting layers, a connecting layer, a light emitting diode chip, a plurality of welding lines, an outer transparent cover and a fluorescent layer, wherein the insulating layers are arranged on the heat radiating substrate; the light reflecting layers are respectively arranged on one of the insulating layers and are provided with a plurality of light reflecting slopes; the conducting layers are respectively arranged on one of the light reflecting layers; the connecting layer is arranged on the heat radiating substrate, and the coefficient of heat conductivity of the connecting layer is larger than 2; the light emitting diode chip is arranged on the connecting layer; the welding lines are used for connecting the light emitting diode chip with the conducting layers; the outer transparent cover is arranged on the light emitting diode chip; and the fluorescent layer is arranged on the surface of the outer transparent cover and is not in contact with the light emitting diode chip substantially, wherein the surface of the outer transparent cover faces to the heat radiating substrate.
Description
Technical field
The present invention relates to light-emitting device (light-emitting devices), and be particularly related to the light emitting module of the light-emitting diode that uses the contact of entity not fluorescent material and the AC illuminator of application thereof.
Background technology
(light emitting diode LED) has the advantage little like volume, thereby the illumination that can be used for the array encapsulation is used to be used at present sending the light-emitting diode of the light emitting module of white light on the market.
Generally so-called " white light " typically refers to a kind of mixed light of many colors; At least comprise the coloured light of wavelength more than two kinds with the being seen white light of human eye, for example: blue light add that sodium yellow can obtain the white light of two complementary wavelengths (complementary wavelength) or mix by blue light, green light, red light after can obtain the white light of three-wavelength.
Below send two kinds of light emitting modules of white light, comprising for known being used at present:
One, excite yellow fluorescent powder to produce the light emitting module of white light with blue LED chip.The transparent optical cement that is mixed with gold-tinted fluorescent material is filled in periphery at blue LED chip; The light that utilizes blue LED chip to send excites gold-tinted fluorescent material to produce gold-tinted; Having partly simultaneously, the blue light of proper proportion penetrates out; This part blue light cooperates goes up the gold-tinted that fluorescent material is sent, i.e. the white light of two complementary wavelengths that the blue Huang of formation mixes; And
Two, excite with ultraviolet light-emitting diodes and evenly be mixed with a certain proportion of blue colour fluorescent powder, green emitting phosphor, red fluorescence powder to produce the light emitting module of white light.Be filled with the transparent optical cement that evenly is mixed with a certain proportion of blue colour fluorescent powder, green emitting phosphor, red fluorescence powder in the periphery of ultraviolet light-emitting diodes chip, the multiple fluorescent material that utilizes the above-mentioned color of ultraviolet excitation that the ultraviolet light-emitting diodes chip sent is to produce white light.This similar fluorescent lamp principle can obtain the white light of three-wavelength after exciting.
Yet; In the light emitting module of above-mentioned sent white light; Because sneaking into the transparent optical cement of particular color fluorescent material is directly to have contacted light-emitting diode chip for backlight unit; So when light emitting module is operated, will receive the influence that light-emitting diode chip for backlight unit produces heat, so will deterioration be mixed with the transparent optical cement of fluorescent material.And fluorescent material also has the conversion efficiency problem, also can produce heat, and then has influence on the efficient and the life-span of crystal grain itself.In addition, coated owing to light-emitting diode chip for backlight unit generally is arranged on the less wire support of area (lead frame) and by above-mentioned transparent optical cement, thereby wire support is limited for the heat energy effect that the loss light-emitting diode chip for backlight unit is produced.So, along with the growth of light emitting module operating time, the accumulation of heat energy within it probably can cause the drift of light-emitting diode chip for backlight unit emission wavelength in it and the deterioration of transparent optical cement, and then influences the white light outgoing performance of light emitting module.
Summary of the invention
Therefore, in order to improve above-mentioned prior art problems, the invention provides the alternating current illuminating device of a kind of light emitting module and application thereof.
According to an embodiment, the invention provides a kind of light emitting module, comprising:
One heat-radiating substrate; A plurality of insulating barriers are arranged on this heat-radiating substrate; A plurality of reflection layers are arranged at respectively on one of those insulating barriers, and wherein this reflection layer has several light reflecting slant; A plurality of conductive layers are arranged on one of those reflection layers respectively; One articulamentum is arranged on this heat-radiating substrate, and wherein this articulamentum has the conductive coefficient greater than 2; One light-emitting diode chip for backlight unit is arranged on this articulamentum; A plurality of bonding wires link this light-emitting diode chip for backlight unit and those conductive layers; One transparent housing is arranged on the light-emitting diode chip for backlight unit; And a fluorescence coating, be arranged on the surface that regards to this heat-radiating substrate of this transparent housing, wherein this fluorescence coating this light-emitting diode chip for backlight unit of entity contact not.
According to another embodiment, the invention provides a kind of light emitting module, comprising:
One heat-radiating substrate; A plurality of articulamentums are arranged in the different portions of this heat-radiating substrate, and wherein this articulamentum has the conductive coefficient greater than 2; A plurality of insulating barriers, a plurality of reflection layer and a plurality of conductive layer all are arranged in the different portions of this heat-radiating substrate and staggered with those articulamentums, and wherein those reflection layers have several reflective inclined-planes; A plurality of light-emitting diode chip for backlight unit are arranged on one of those articulamentums respectively; A plurality of bonding wires, in series those light-emitting diode chip for backlight unit of electrically connect and those conductive layers; One transparent housing is arranged on the light-emitting diode chip for backlight unit; And a fluorescence coating, be arranged at this transparent housing in the face of on the surface of this light-emitting diode chip for backlight unit, wherein this fluorescence coating those light-emitting diode chip for backlight unit of entity contact not.
According to another embodiment, the invention provides a kind of light emitting module, comprising:
One heat-radiating substrate; A plurality of articulamentums are arranged in the different portions of this heat-radiating substrate, and wherein this articulamentum has the conductive coefficient greater than 2; A plurality of light-emitting diode chip for backlight unit are arranged on one of those articulamentums respectively; A plurality of bonding wires in series link those light-emitting diode chip for backlight unit; One transparent housing is arranged on the light-emitting diode chip for backlight unit; And a fluorescence coating, be arranged at this transparent housing in the face of on the surface of this light-emitting diode chip for backlight unit, wherein this fluorescence coating those light-emitting diode chip for backlight unit of entity contact not.
According to another embodiment, the invention provides a kind of AC illuminator, comprising:
Like aforesaid light emitting module; And a bridge rectifier, be coupled to this light emitting module, wherein when operation, this bridge rectifier system is coupled to a current-limiting resistance and an AC power.
For letting above-mentioned purpose of the present invention, characteristic and the advantage can be more obviously understandable, hereinafter is special lifts a preferred embodiment, and conjunction with figs., elaborates as follows.
Description of drawings
Fig. 1 has shown the light emitting module according to one embodiment of the invention;
Fig. 2 has shown the light emitting module according to another embodiment of the present invention;
Fig. 3 has shown the light emitting module according to further embodiment of this invention;
Fig. 4 has shown the light emitting module according to another embodiment of the present invention;
Fig. 5 has shown the light emitting module according to further embodiment of this invention;
Fig. 6 has shown the light emitting module according to another embodiment of the present invention;
Fig. 7 has shown the AC illuminator according to one embodiment of the invention, and it has been used like Fig. 3, Fig. 4, Fig. 5 or light emitting module shown in Figure 6.
Reference numeral:
10: heat-radiating substrate; 10a: evener;
10b: fin; 12: insulating barrier;
13: reflection layer; 13a: light reflecting slant;
14: conductive layer; 30: articulamentum;
32: bonding wire; 40: brilliant substrate of heap of stone;
44,46,48: rete; 50: light-emitting diode component;
52: transparent electrode layer; 54: the conduction contactant;
56: protective clear layer; 70: seal cavity;
80: transparent housing; 90: fluorescence coating;
600: AC power; 400: bridge rectifier;
500: AC illuminator; 700: threshold currents resistance;
A, B: the surface of heat-radiating substrate; C, D: the surface of transparent housing;
60,60A, 60B, 60C: light-emitting diode chip for backlight unit;
100,100 ', 200,200 ', 300,300 ': light emitting module.
Embodiment
Please, shown light emitting module 100, mainly comprised a heat-radiating substrate 10, a light-emitting diode chip for backlight unit 60, a transparent housing 80, be positioned at the main members such as a lip-deep fluorescence coating 90 of transparent housing 80 according to one embodiment of the invention with reference to Fig. 1.
As shown in Figure 1, heat-radiating substrate 10 is shown a planarizing substrate in the present embodiment, have the surfaces A and the B of two relative and smooth heat-radiating substrates 10, and light-emitting diode chip for backlight unit 60 is arranged on the surperficial B of heat-radiating substrate 10.At this, between heat-radiating substrate 10 and light-emitting diode chip for backlight unit 60, be provided with an articulamentum 30, see through the setting of articulamentum 30, mode firmly is arranged at light-emitting diode chip for backlight unit 60 on the surperficial B of heat-radiating substrate 10 can to see through eutectic or cohere etc.In addition, on heat-radiating substrate 10, also be provided with several insulating barriers 12, on these insulating barriers 12, then be respectively arranged with a conductive layer 14, to be used for as lead or conductive connection pads.Between insulating barrier 12 and conductive layer 14, then be provided with reflection layer 13, reflection layer 13 comprises the material of the reflective characteristics of surperficial tool such as metal, metal alloy, metal oxide, plastics.And reflection layer 13 has a ladder type section, and not for conductive layer 14 covers several light reflecting slant 13a that exposes, so as to reflecting the light that light-emitting diode chip for backlight unit 60 is sent.
In one embodiment, light-emitting diode chip for backlight unit 60 has comprised a brilliant substrate 40 of heap of stone, and brilliant substrate 40 of heap of stone is by like sapphire (sapphire, Al
2O
3) insulating material, silicon substrate or carborundum (SiC) substrate form, it also can adopt has the material that approaches luminescence component formed thereon (can comprise III family and IV family element, or be existing III-V group iii v compound semiconductor material) material behavior.In addition; On an one of brilliant substrate 40 of heap of stone, be formed with a light-emitting diode component 50; It has comprised several retes 44,46 and 48 that are stacked in regular turn on the brilliant substrate 40 of heap of stone; Wherein rete 44 is one of first admixture that is doped with first conductivity III family-nitrogen rete (group III-Nitride layer); Rete 46 then is that (multiple quantum well, MQW) layer, rete 48 are then for being doped with in contrast to one the 2nd III family-nitrogen rete (group III-Nitride layer) of second admixture of second conductivity of first conductivity for a multiple quantum trap.In addition, on one one, then be respectively arranged with a transparent electrode layer 52 on the rete 48 and at rete 44.On these transparent electrode layers 52, then be respectively arranged with a conduction contactant 54, to be used for the contact of electrically connect light-emitting diode chip for backlight unit 60 and other member.In addition, also comprise a protective clear layer 56 in the light-emitting diode chip for backlight unit 60, it has covered member such as conduction contactant 54, transparent electrode layer 52, light-emitting diode component 50 substantially and has only partly exposed an one of these conductive layers 14.Through the use of protective clear layer 56, can avoid above-mentioned members in the light-emitting diode chip for backlight unit 60 when operation, touch arround air and produce oxidation, and the surface of protective clear layer 56 can be a smooth surface or is the rough surface through roughening treatment.
In one embodiment; Light-emitting diode component 50 comprises rete 44,46 and 48; Wherein, rete 44 is that a n-gallium nitride layer (being doped with the gallium nitride of n type admixture), rete 46 are that a multiple quantum trap (MQW) layer, rete 48 are a p-gallium nitride layer (being doped with the gallium nitride of p type admixture).The multiple quantum trap layer can be by forming like InGaN, and it can play the part of an active layers that is used to launch light.Above-mentioned rete the 44,46, the 48th adopts prior art and forms, so no longer describe its making at this.
In one embodiment, and the formation method of above-mentioned rete 44,46,48 comprises building crystal to grow.In addition, transparent electrode layer 52 can by indium tin oxide (indium tin oxide, ITO), zinc oxide (ZnO) or other transparent conductive material form.
As shown in Figure 1,54 of conduction contactants on the light-emitting diode chip for backlight unit 60 respectively through a bonding wire 32 be positioned at one of several conductive layers 14 on the heat-radiating substrate 10 and form electrically connect.Transparent housing 80 then is arranged at surperficial B and the coating member formed thereon to cover heat-radiating substrate 10 substantially on the light-emitting diode chip for backlight unit 60, and then between transparent housing 80 and heat-radiating substrate 10, defines a seal cavity 70.At this, transparent housing 80 has the surface C and the D of two relative transparent housings 80, and wherein the surface C of transparent housing is with respect to the surface of light-emitting diode chip for backlight unit 60 with heat-radiating substrate 10, on the surface C of transparent housing 80, then is formed with a fluorescence coating 90.
Based on sending the white light purpose, applied light-emitting diode chip for backlight unit 60 is that green glow is to the light-emitting diode chip for backlight unit between ultraviolet light for sending wavelength in the light emitting module 100.And the blue light that is sent corresponding to light-emitting diode chip for backlight unit 60, fluorescence coating 90 can comprise as being mixed with the epoxy resin or the silica gel material of the yellow fluorescent powders such as positive silicic acid (BOS) fluorescent material that mix like cerium doped yttrium aluminum garnet (YAG) fluorescent material, terbium aluminium garnet (TAG) fluorescent material or europium.Or corresponding to the blue green light that light-emitting diode chip for backlight unit 60 is sent, fluorescence coating 90 can comprise as mixing sulfide/or be mixed with strontium sulfide (SrS:Eu) fluorescent material of europium etc.Perhaps, corresponding to the ultraviolet light that light-emitting diode chip for backlight unit 60 is sent, fluorescence coating 90 can comprise like epoxy resin that is mixed with blue colour fluorescent powder, yellow fluorescent powder and red fluorescence powder or silica gel material.
In one embodiment; Heat-radiating substrate 10 can comprise aluminium (Al), copper (Cu), iron (Fe), silver (Ag), the metal of gold (Au), alloy, other alloy material, powdered graphite plate, diamond powder plate or other high conductivity material of above-mentioned material; It can have the conductive coefficient between 10～6000; Articulamentum 30 then can comprise the Heat Conduction Material of elargol (conductive coefficient is about 4), graphite glue (conductive coefficient is about 8), diamond arogel (conductive coefficient is about 30), other metal dust glue or metal alloy; And have conductive coefficient, and preferably has conductive coefficient between 10～3000 greater than 2.Protective clear layer 56 can comprise silicon dioxide (SiO
2), silicon nitride (Si
3N
4), the insulating material of silicon (Silicon), epoxy resin (Epoxy) or other light transmissive material.Then can be filled with in the seal cavity 70 like nitrogen (N
2), helium (He), argon gas (Ar), dry air, the gas that is difficult for oxidation or vacuum.Transparent housing 80 can comprise glass, acryl, silicon (Silicon), epoxy resin (Epoxy), plastics or other material transparent.
In light emitting module as shown in Figure 1 100; In view of light-emitting diode chip for backlight unit 60 entity contact fluorescence coating 90 not; And be that blanketing gas institute in the seal cavity 70 separates mutually between the above-mentioned member, so the heat energy that when operation, produced of light-emitting diode chip for backlight unit 60 can't cause the deterioration of fluorescence coating.And; Because light-emitting diode chip for backlight unit 60 is directly to be arranged on the heat-radiating substrate 10 through the articulamentum 30 of tool good heat conductive characteristic; Thereby can see through good heat conductive characteristic that articulamentum 30 and heat-radiating substrate 10 possessed and the heat energy that when operation, produced of loss light-emitting diode chip for backlight unit 60 effectively; And then be reduced in the heat energy accumulation situation in the light emitting module 100, and thereby can improve the white light outgoing performance and the reliability of light emitting module 100.
Please, shown light emitting module 100 ' according to another embodiment of the present invention with reference to Fig. 2.At this, light emitting module 100 ' broadly similar as shown in Figure 2 is improved and only be directed against heat-radiating substrate 10 in light emitting module as shown in Figure 1 100.Based on the purpose of simplifying, identical components will adopt same numeral to represent in the present embodiment.
As shown in Figure 2; In the present embodiment; Heat-radiating substrate 10 only has the surperficial B of a smooth heat-radiating substrate 10; To be used to be provided with light-emitting diode chip for backlight unit 60 main members such as grade, locate then to pass through processing in the surfaces A (referring to Fig. 1) of heat-radiating substrate 10, and then in heat-radiating substrate 10, form several fins of separating mutually (fin) 10b like micromachined (micromachining) or etching methods such as (etching); And heat-radiating substrate 10 is not denoted as an evener 10a through the part that said method is handled in Fig. 2, and the fin 10b that is linked to this evener 10a has then formed the heat-radiating substrate 10 in the present embodiment with evener 10a.
In the present embodiment; Setting based on several fins 10a; Heat-radiating substrate 10 shown in Fig. 2 can be more as shown in Figure 1 the heat-radiating substrate 10 loss heat energy that light-emitting diode chip for backlight unit 60 is produced when operation more effectively; And then be reduced in the heat energy accumulation situation in the light emitting module 100 ', and thereby can improve the white light outgoing performance and the reliability of light emitting module 100 '.
Please, shown light emitting module 200 according to further embodiment of this invention with reference to Fig. 3.At this, light emitting module 200 broadly similars as shown in Figure 3 are in light emitting module as shown in Figure 1 100, and only improve to the light-emitting diode chip for backlight unit on the heat-radiating substrate 10 and the setting of conductive layer.Based on the purpose of simplifying, identical components will adopt same numeral to represent in the present embodiment.
As shown in Figure 3, in the present embodiment, several light-emitting diode chip for backlight unit 60A, 60B and 60C and several conductive layers 14 are set alternately on the surperficial B of heat-radiating substrate 10.Likewise; Then be sequentially provided with an insulating barrier 12 and a reflection layer 13 at these conductive layers 14 and 10 of heat-radiating substrates, and these light-emitting diode chip for backlight unit 60A, 60B and 60C still see through an articulamentum 30 of tool good heat conductive characteristic and directly are located on the heat-radiating substrate 10.As shown in Figure 3; The situation that is crisscross arranged in view of 14 of these light-emitting diode chip for backlight unit 60A, 60B and 60C and these conductive layers; Therefore light-emitting diode chip for backlight unit 60A, 60B and 60C can divide and in series be electrically connected at one of these conductive layers 14 through bonding wire 32, and then form the array thing through the light-emitting diode chip for backlight unit of connecting electrically.In the present embodiment; Transparent housing 80 then is same as situation as shown in Figure 1 substantially with the situation that is provided with of fluorescence coating 90; In Fig. 3, then only partly show transparent housing 80 and fluorescence coating 90; But be not to limit the present invention with above-mentioned enforcement situation, 10 of transparent housing 80 and heat-radiating substrates still definition one seal cavity 70 is arranged, can be filled with like nitrogen (N in it
2), a gas of helium (He), argon gas (Ar) or dry air or be vacuum.
In the present embodiment; The good heat conductive characteristic that several light-emitting diode chip for backlight unit 60A, 60B and the 60C in the white-light emitting module 200 thereby the articulamentum 30 that can see through its below respectively and heat-radiating substrate 10 are possessed and the heat energy that when operating, produced of loss light-emitting diode chip for backlight unit 60A, 60B and 60C effectively; And then be reduced in the heat energy accumulation situation in the white-light emitting module 200, and thereby can improve the white light outgoing performance and the reliability of white-light emitting module 200.
Please, shown white-light emitting module 200 ' according to another embodiment of the present invention with reference to Fig. 4.At this, light emitting module 200 ' broadly similar as shown in Figure 4 is improved and only be directed against heat-radiating substrate 10 in light emitting module as shown in Figure 3 200.Based on the purpose of simplifying, identical components will adopt same numeral to represent in the present embodiment.
As shown in Figure 4; In the present embodiment; Heat-radiating substrate 10 only has the surperficial B of a smooth heat-radiating substrate 10; To be used to be provided with main members such as light-emitting diode chip for backlight unit 60A, 60B and 60C, to locate then to pass through processing in the surfaces A (referring to Fig. 3) of heat-radiating substrate 10, and then in heat-radiating substrate 10, form several fins of separating mutually (fin) 10b like micromachined (micromachining) or etching methods such as (etching); And heat-radiating substrate 10 is not denoted as an evener 10a through the part that said method is handled in Fig. 4, and the fin 10b that is linked to this evener 10a has then formed the heat-radiating substrate 10 in the present embodiment with evener 10a.
In the present embodiment; Setting based on several fins 10a; Heat-radiating substrate 10 shown in Fig. 4 can be more as shown in Figure 3 the heat-radiating substrate 10 loss heat energy that light-emitting diode chip for backlight unit 60A, 60B and 60C are produced when operation more effectively; And then be reduced in the heat energy accumulation situation in the light emitting module 200 ', and thereby can improve the white light outgoing performance and the reliability of light emitting module 200 '.
Please, shown light emitting module 300 according to another embodiment of the present invention with reference to Fig. 5.At this, light emitting module 300 broadly similars as shown in Figure 5 are in light emitting module as shown in Figure 3 200, and only improve to the setting of the retes such as conductive layer, insulating barrier and reflection layer on heat-radiating substrate 10.Based on the purpose of simplifying, identical components will adopt same numeral to represent in the present embodiment.
As shown in Figure 5, in the present embodiment, on the surperficial B of heat-radiating substrate 10, only be provided with several light-emitting diode chip for backlight unit 60A, 60B and 60C and no longer be provided with like other retes such as conductive layer 14, reflection layer 13 and insulating barriers.And still directly be located on the heat-radiating substrate 10 through an articulamentum 30 of tool good heat conductive characteristic between these light-emitting diode chip for backlight unit 60A, 60B and the 60C.In addition; These light-emitting diode chip for backlight unit 60A, 60B and 60C can divide through bonding wire 32 electrically connect in series to be positioned at the conductive layer 14 (as shown in Figure 2) that is linked to different electrical transparent electrode layers 52 on light-emitting diode chip for backlight unit 60A, 60B and the 60C, and then form through the array thing of the light-emitting diode chip for backlight unit of series connection electrically.In the present embodiment, transparent housing 80 then is same as situation as shown in Figure 3 substantially with the situation that is provided with of fluorescence coating 90, and still defining 10 of transparent housing 80 and heat-radiating substrates has a seal cavity 70, can be filled with like nitrogen (N in it
2), a gas of helium (He), argon gas (Ar) or dry air or be vacuum.
Please, shown white-light emitting module 300 ' according to another embodiment of the present invention with reference to Fig. 6.At this, light emitting module 300 ' broadly similar as shown in Figure 6 is improved and only be directed against heat-radiating substrate 10 in light emitting module as shown in Figure 5 300.Based on the purpose of simplifying, identical components will adopt same numeral to represent in the present embodiment.
As shown in Figure 6; In the present embodiment; Heat-radiating substrate 10 only has the surperficial B of a smooth heat-radiating substrate 10; To be used to be provided with main members such as light-emitting diode chip for backlight unit 60A, 60B and 60C, to locate then to pass through processing in the surfaces A (referring to Fig. 3) of heat-radiating substrate 10, and then in heat-radiating substrate 10, form several fins of separating mutually (fin) 10b like micromachined (micromachining) or etching methods such as (etching); And heat-radiating substrate 10 is not denoted as an evener 10a through the part that said method is handled in Fig. 6, and the fin 10b that is linked to this evener 10a has then formed the heat-radiating substrate 10 in the present embodiment with evener 10a.
In the present embodiment; Setting based on several fins 10b; Heat-radiating substrate 10 shown in Fig. 6 can be more as shown in Figure 5 the heat-radiating substrate 10 loss heat energy that light-emitting diode chip for backlight unit 60A, 60B and 60C are produced when operation more effectively; And then be reduced in the heat energy accumulation situation in the light emitting module 300 ', and thereby can improve the white light outgoing performance and the reliability of light emitting module 300 '.
In aforementioned enforcement situation, the enforcement situation of the light-emitting diode component in the employed light-emitting diode chip for backlight unit be not be defined in Fig. 1 with Fig. 2 interior shown in situation.In another embodiment; Can be provided with a plurality of light-emitting diode components (for example for being positioned at a plurality of light-emitting diode components 50 on the brilliant substrate of heap of stone) in employed light-emitting diode chip for backlight unit 60,60A, 60B and the 60C; And the electrically connect that can form through suitable manufacture of semiconductor therebetween between several light-emitting diode components in it concerns (not shown), and then has formed light-emitting diode chip for backlight unit 60,60A, 60B or the 60C of the one chip form that comprises a plurality of light emitting diodes.
Please with reference to Fig. 7, shown the AC illuminator 500 according to one embodiment of the invention, it has been used like Fig. 3, Fig. 4, Fig. 5 or light emitting module shown in Figure 6.
In view of application like several several light-emitting diode chip for backlight unit 60A, 60B and 60C that electrically connect in Fig. 3 light emitting module extremely shown in Figure 6; Through increasing the quantity of the light-emitting diode chip for backlight unit of connecting through resistance in the light emitting module, the present invention then can provide a kind of AC illuminator that is applicable to illumination application.
As shown in Figure 7, AC illuminator 500 has mainly comprised like Fig. 3 to light emitting module 200/200 '/300/300 ', threshold currents resistance 700 and a bridge rectifier 400 shown in Figure 6.As shown in Figure 7, bridge rectifier 400 can be coupled to an anode and a negative terminal of light emitting module 200/200 '.When AC illuminator 500 operations, 400 of bridge rectifiers are coupled to an AC power 600, and AC power 600 for example is the AC power of 110V or 220V.Between the anode of bridge rectifier 400 and light emitting module 200/200 '/300/300 ', then be provided with threshold currents resistance 700, with protection light emitting module 200/200 '/300/300 ' when operating.In the light emitting module 200/200 ' of AC illuminator 500 light-emitting diode chip for backlight unit be provided with quantity then look each light-emitting diode chip for backlight unit in it operating voltage and the AC power desiring to couple and deciding.
In one embodiment; When the operating voltage of each light-emitting diode chip for backlight unit in the white light light emitting module 200/200 ' in the AC illuminator 500 is about 3.3V; And 500 AC powers of desiring to couple of AC illuminator then can in series couple 30-40 identical light-emitting diode chip for backlight unit to form this light emitting module 200/200 '/300/300 ' when being 110V.
Though the present invention discloses as above with preferred embodiment; But it is not that any those skilled in the art is not breaking away from the spirit and scope of the present invention in order to qualification the present invention; When can doing to change and retouching, so protection scope of the present invention is as the criterion when looking the scope that accompanying claims defines.
Claims (13)
1. a light emitting module is characterized in that, comprising:
One heat-radiating substrate;
A plurality of insulating barriers are arranged on the said heat-radiating substrate;
A plurality of reflection layers are arranged at respectively on one of said a plurality of insulating barriers, and wherein said reflection layer has several light reflecting slant;
A plurality of conductive layers are arranged on one of said a plurality of reflection layers respectively;
One articulamentum is arranged on the said heat-radiating substrate, and wherein said articulamentum has the conductive coefficient greater than 2;
One light-emitting diode chip for backlight unit is arranged on the said articulamentum;
A plurality of bonding wires link said light-emitting diode chip for backlight unit and said a plurality of conductive layer;
One transparent housing is arranged on the said light-emitting diode chip for backlight unit; And
One fluorescence coating is arranged on the surface that regards to said heat-radiating substrate of said transparent housing, and wherein said fluorescence coating not entity contacts said light-emitting diode chip for backlight unit.
2. light emitting module according to claim 1 is characterized in that, said light-emitting diode chip for backlight unit comprises:
One brilliant substrate of heap of stone is arranged on the said articulamentum;
One light-emitting diode component is arranged on an one of said brilliant substrate of heap of stone;
One first electrode is arranged on an one of said light-emitting diode component;
One second electrode is arranged in another one of said light-emitting diode component;
One conduction contactant is arranged at respectively on said first electrode and said second electrode; And
One transparent insulating layer; Cover said brilliant substrate of heap of stone, said light-emitting diode component, said first electrode, said second electrode and said conduction contactant; One surface of partly exposing conductive connection pads, wherein said transparent insulating layer has a smooth surface or a rough surface.
3. light emitting module according to claim 1 is characterized in that, said heat-radiating substrate comprises:
One evener has one the 3rd relative surface and one the 4th surface, and wherein said articulamentum and said conductive layer are arranged on said the 3rd surface; And
A plurality of fins are arranged on said the 4th surface of said evener.
4. light emitting module according to claim 1 is characterized in that, said articulamentum comprises elargol, graphite glue, diamond arogel, carbon dust glue or metal-containing powders glue.
5. a light emitting module is characterized in that, comprising:
One heat-radiating substrate;
A plurality of articulamentums are arranged in the different portions of said heat-radiating substrate, and wherein said articulamentum has the conductive coefficient greater than 2;
A plurality of insulating barriers, a plurality of reflection layer and a plurality of conductive layer are arranged in the different portions of said heat-radiating substrate and staggered with said a plurality of articulamentums, and wherein said a plurality of reflection layers have several reflective inclined-planes;
A plurality of light-emitting diode chip for backlight unit are arranged on one of said a plurality of articulamentums respectively;
A plurality of bonding wires, the in series said a plurality of light-emitting diode chip for backlight unit of electrically connect and said a plurality of conductive layer;
One transparent housing is arranged on the said light-emitting diode chip for backlight unit; And
One fluorescence coating is arranged at said transparent housing in the face of on the surface of said light-emitting diode chip for backlight unit, and wherein said fluorescence coating not entity contacts said a plurality of light-emitting diode chip for backlight unit and said heat-radiating substrate.
6. light emitting module according to claim 5 is characterized in that, said a plurality of light-emitting diode chip for backlight unit comprise respectively:
One brilliant substrate of heap of stone is arranged on the said articulamentum;
One light-emitting diode component is arranged on an one of said insulated substrate;
One first electrode is arranged on an one of said light-emitting diode component;
One second electrode is arranged in another one of said light-emitting diode component;
One conduction contactant is provided with respectively on said first electrode and said second electrode; And
One transparent insulating layer covers said brilliant substrate of heap of stone, said light-emitting diode component, said first electrode, said second electrode and said conduction contactant, a surface of partly exposing conductive connection pads.
7. light emitting module according to claim 5 is characterized in that, said heat-radiating substrate comprises:
One evener has one the 3rd relative surface and one the 4th surface, and wherein said articulamentum and said conductive layer are arranged on said the 3rd surface; And
A plurality of fin-shaped portion is arranged on said the 4th surface of said evener.
8. light emitting module according to claim 5 is characterized in that, said articulamentum comprises elargol, graphite glue, diamond arogel, carbon dust glue or metal-containing powders glue.
9. a light emitting module is characterized in that, comprising:
One heat-radiating substrate;
A plurality of articulamentums are arranged in the different portions of said heat-radiating substrate, and wherein said articulamentum has the conductive coefficient greater than 2;
A plurality of light-emitting diode chip for backlight unit are arranged on one of said a plurality of articulamentums respectively;
A plurality of bonding wires in series link said a plurality of light-emitting diode chip for backlight unit;
One transparent housing is arranged on the said light-emitting diode chip for backlight unit; And
One fluorescence coating is arranged at said transparent housing in the face of on the surface of said light-emitting diode chip for backlight unit, and wherein said fluorescence coating not entity contacts said a plurality of light-emitting diode chip for backlight unit.
10. light emitting module according to claim 9 is characterized in that, said a plurality of light-emitting diode chip for backlight unit comprise respectively:
One brilliant substrate of heap of stone is arranged on the said articulamentum;
One light-emitting diode component is arranged on an one of said brilliant substrate of heap of stone;
One first electrode is arranged on an one of said light-emitting diode component;
One second electrode is arranged in another one of said light-emitting diode component;
One conduction contactant is arranged at respectively on said first electrode and said second electrode; And
One transparent insulating layer covers said brilliant substrate of heap of stone, said light-emitting diode component, said first electrode, said second electrode and said conduction contactant, a surface of partly exposing conductive connection pads.
11. light emitting module according to claim 9 is characterized in that, said heat-radiating substrate comprises:
One evener has one the 3rd relative surface and one the 4th surface, and wherein said articulamentum and conductive layer are arranged on said the 3rd surface; And
A plurality of fin-shaped portion is arranged on said the 4th surface of said evener.
12. light emitting module according to claim 9 is characterized in that, said articulamentum comprises elargol, graphite glue, diamond arogel, carbon dust glue or metal-containing powders glue.
13. an AC illuminator is characterized in that, comprising:
According to claim 5 or 9 described light emitting modules; And
One bridge rectifier is coupled to said light emitting module, and wherein when operation, said bridge rectifier is coupled to a current-limiting resistance and an AC power.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105681311A CN102479786A (en) | 2010-11-23 | 2010-11-23 | Light emitting module and alternating current light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105681311A CN102479786A (en) | 2010-11-23 | 2010-11-23 | Light emitting module and alternating current light emitting device |
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| Publication Number | Publication Date |
|---|---|
| CN102479786A true CN102479786A (en) | 2012-05-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105681311A Pending CN102479786A (en) | 2010-11-23 | 2010-11-23 | Light emitting module and alternating current light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103511995A (en) * | 2012-06-29 | 2014-01-15 | 展晶科技(深圳)有限公司 | Light-emitting diode light bar |
| CN110350064A (en) * | 2013-07-01 | 2019-10-18 | 晶元光电股份有限公司 | Light-emitting diode component and production method |
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| WO2006095949A1 (en) * | 2005-03-11 | 2006-09-14 | Seoul Semiconductor Co., Ltd. | Led package having an array of light emitting cells coupled in series |
| CN101192601A (en) * | 2006-11-30 | 2008-06-04 | 东芝照明技术株式会社 | Illumination device with semiconductor light-emitting elements |
| US20090322197A1 (en) * | 2008-06-30 | 2009-12-31 | Rene Helbing | Light emitting device having a transparent thermally conductive layer |
| CN101852345A (en) * | 2009-03-30 | 2010-10-06 | 奇力光电科技股份有限公司 | Light-emitting diode (LED) light source module |
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| WO2006095949A1 (en) * | 2005-03-11 | 2006-09-14 | Seoul Semiconductor Co., Ltd. | Led package having an array of light emitting cells coupled in series |
| CN101192601A (en) * | 2006-11-30 | 2008-06-04 | 东芝照明技术株式会社 | Illumination device with semiconductor light-emitting elements |
| US20090322197A1 (en) * | 2008-06-30 | 2009-12-31 | Rene Helbing | Light emitting device having a transparent thermally conductive layer |
| CN101852345A (en) * | 2009-03-30 | 2010-10-06 | 奇力光电科技股份有限公司 | Light-emitting diode (LED) light source module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103511995A (en) * | 2012-06-29 | 2014-01-15 | 展晶科技(深圳)有限公司 | Light-emitting diode light bar |
| CN103511995B (en) * | 2012-06-29 | 2016-04-20 | 展晶科技(深圳)有限公司 | Light-emitting diode light bar |
| CN110350064A (en) * | 2013-07-01 | 2019-10-18 | 晶元光电股份有限公司 | Light-emitting diode component and production method |
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Application publication date: 20120530 |