JP2002118293A - Light-emitting device and forming method thereof - Google Patents

Light-emitting device and forming method thereof

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Publication number
JP2002118293A
JP2002118293A JP2001053511A JP2001053511A JP2002118293A JP 2002118293 A JP2002118293 A JP 2002118293A JP 2001053511 A JP2001053511 A JP 2001053511A JP 2001053511 A JP2001053511 A JP 2001053511A JP 2002118293 A JP2002118293 A JP 2002118293A
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light
light emitting
emitting device
emitting element
mold member
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JP3589187B2 (en
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Kazuhiro Nagamine
Tatsunori Toyoda
和浩 永峰
達憲 豊田
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Nichia Chem Ind Ltd
日亜化学工業株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/06102Disposition the bonding areas being at different heights
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil

Abstract

PROBLEM TO BE SOLVED: To provide a conversion type light-emitting device together with its forming method of high reliability with good productivity, while excellent in optical characteristics. SOLUTION: The light-emitting device is provided which comprises a light- emitting element where a semiconductor layer is provided on a substrate, a phosphor which absorbs a part of the light from the light-emitting element and emits a light of a wavelength longer than that, and a translucent mold member which comprises the phosphor and encloses the surface of the light- emitting element. At least one bump is provided on an electrode of the light- emitting element, with the upper surface of the bump almost flush with the upper surface of the translucent mold member.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は液晶のバックライト、照明光源、各種インジケータや交通信号灯などに利用可能な発光装置に係わり、半導体発光素子とそれよりも長波長の光が発光可能な蛍光物質とを有する長波長変換型発光装置及びその形成方法に関する。 The present invention relates to a liquid crystal backlight, illumination light source, various indicators and traffic lights relates to a light emitting device usable in such a semiconductor light emitting device and a fluorescent substance capable of emitting light is light having a longer wavelength preparative about the long wavelength conversion-type light emitting device and a method of forming with a.

【0002】 [0002]

【従来技術】今日、青色光が高輝度に発光可能な半導体発光素子である窒化物半導体(In BACKGROUND ART Today, a nitride semiconductor blue light is capable of emitting semiconductor light-emitting device with high luminance (In Ga Al x Ga y Al
1−x−y N、0≦x≦1、0≦y≦1)を利用したL 1-x-y N, 0 ≦ x ≦ 1,0 ≦ y ≦ 1) Using L
EDチップが開発された。 ED chip has been developed. 窒化物半導体を利用した発光素子は、他のGaAs、AlInGaP等の材料を利用した赤から黄緑色を発光する発光素子と比較して出力が高く、温度による色シフトが少ないなどの特徴を持っているものの、現在までのところ、緑色以上の波長を有する長波長領域で高出力を得られにくいという傾向がある。 Light-emitting elements using nitride semiconductors, other GaAs, and outputs the comparison from red using a material such as AlInGaP light-emitting element which emits yellow-green is high, with features such as a small color shift due to temperature although there, to date, there is a tendency that it is difficult to obtain a high output in the long wavelength region having a wavelength of more than green. 他方、このLEDチップ上にLEDチップから放出された青色光の少なくとも一部を吸収して、黄色が発光可能な蛍光物質であるYAG:Ce蛍光体等を配置させることによって白色系が発光可能な発光ダイオードが開発された。 On the other hand, to absorb at least a portion of the blue light emitted from the LED chips on the LED chip, YAG yellow is a light-emitting fluorescent substance: white by placing a Ce phosphor or the like capable of emitting light light-emitting diode has been developed. (国際公開番号WO98/5078号) (International Publication No. WO98 / 5078)

【0003】この発光ダイオードは、例えばマウントリードのカップ内底部にLEDチップを配置させ、前記L [0003] The light-emitting diode, for example, an LED chip is disposed in the cup bottom inside of the mount lead, the L
EDチップと前記マウントリード及びインナーリードとを金線等により電気的に接続する。 And ED chip and the mount lead and inner lead are electrically connected by a gold wire or the like. 接続後、前記カップ内にLEDチップからの青色の光を吸収し補色関係にある黄色の光を発光する蛍光物質含有の透光性モールド樹脂を充填する。 After connection, to fill the light-transmitting mold resin phosphor containing that emits yellow light in absorbing blue light in the complementary relationship from the LED chip into the cup. 最後に両リードの先端部分に透光性の樹脂等にて凸レンズを形成する。 To form a convex lens in translucent resin such as the tip portion of the last two leads. このようにして、LED In this way, LED
チップと蛍光物質との光の混色からなる白色の光を凸レンズを介して発光するLEDランプが得られる。 LED lamps that emit white light consisting of color mixing of light between the chip and the fluorescent substance through the convex lens is obtained.

【0004】上記のLEDランプは、予めチップの周囲に蛍光物質含有の透光性モールド樹脂を設け、その後に透光性の樹脂等により凸レンズ部材を形成するものである。 [0004] The above LED lamp, a light-transmitting mold resin phosphor containing provided around the pre-chip, and forms a convex lens member by subsequently translucent resin or the like. これによってチップからの光はカップ内に充填された蛍光物質含有の透光性モールド樹脂を通過した時点で所望の混色光となっている。 Thus the light from the chip is a desired mixed light when passing through the light-transmissive molding resin of the fluorescent material-containing filled into the cup. 従って、色変換された光を良好に正面方向に取り出すことができる。 Therefore, it is possible to take out the color conversion light in good front direction. また、カップの形状を調整することで、光散乱の抑制、及び発光出力の向上を図ることができ、容易に所望の発光特性を得ることができる。 Further, by adjusting the shape of the cup, the suppression of light scattering, and it is possible to improve the emission output, it is possible to easily obtain a desired emission characteristics.

【0005】 [0005]

【発明が解決しようとする課題】しかしながら、このようなLEDランプは、小型化になるにつれて発光ムラや色度バラツキが目立ち歩留まり良く生産することが困難であった。 [SUMMARY OF THE INVENTION However, such an LED lamp, it is difficult to light emission unevenness and chromaticity unevenness is high yield production conspicuous as becomes compact.

【0006】そこで本発明は、生産性が良好で且つ光学特性の優れたチップタイプの長波長変換型発光装置とその形成方法を提供することを目的とする。 [0006] The present invention aims to provide a superior long wavelength conversion-type light emitting device chip type and formation method of and optical properties with good productivity.

【0007】 [0007]

【課題を解決するための手段】すなわち、本発明に係る発光装置は、基板上に半導体層を有する発光素子と、該発光素子からの光の一部を吸収してそれよりも長波長の光が発光可能な蛍光物質と、該蛍光物質を有し前記発光素子の表面を包囲する透光性モールド部材とを有する発光装置であって、前記発光素子の電極上に少なくとも1 Means for Solving the Problems That is, the light emitting device according to the present invention, the light emitting element and, in the longer wavelength than it absorbs part of the light from the light emitting element light having a semiconductor layer on a substrate there a light-emitting device having a light-emitting fluorescent substance, a light-transmitting mold member surrounding the surface of the light emitting device having a fluorescent material, at least on the electrode of the light emitting element
つのバンプを有し、該バンプの上面は前記透光性モールド部材の上面と略同一平面であることを特徴とする。 One of a bump, the upper surface of the bump is characterized by a top substantially flush with the light-transmitting mold member. これによって、信頼性が高く、且つ所望の混色光を均一に発光することが可能な発光装置が得られる。 Thus, high reliability, and a desired mixed color light which is capable of uniformly emitting light-emitting device is obtained.

【0008】また、前記バンプの膜厚は5μm〜150 [0008] In addition, the thickness of the bump is 5μm~150
μmである。 It is μm. これによって、高出力に発光することが可能な発光装置が得られる。 Thus, light emitting device capable of emitting a high output can be obtained.

【0009】また、前記バンプの上面、及び前記透光性モールド部材の上面からなる発光装置の上面は、基板側底面に対して略平行であることを特徴とする。 [0009] The upper surface of the bump, and the upper surface of the light-emitting device comprising a top surface of the light-transmitting mold member is characterized in that it is substantially parallel to the substrate side bottom. これによって、良好な指向特性を有する発光装置が得られる。 Thus, the light emitting device is obtained having good directional characteristics.

【0010】また、蛍光物質は、Ceで付活されたイットリウム・アルミニウム・ガーネット系蛍光物質、Eu [0010] In addition, a fluorescent substance, yttrium has been activated with Ce · aluminum-garnet fluorescent material, Eu
及び/又はCrで付活された窒素含有CaO−Al And / or nitrogen-containing been activated with Cr CaO-Al 2 O
−SiO から選択される1種であることを特徴とする。 3, characterized in that one selected from -SiO 2. これによって、簡便で高輝度に混色発光可能な信頼性の高い発光装置が得られる。 Thus, color mixing can emit light highly reliable light emitting device can be obtained in a high luminance in a simple.

【0011】また、前記発光素子の少なくとも基板側に連続した反射膜を有することを特徴とする。 Further, characterized in that it has a reflective film which is continuous in at least the substrate side of the light emitting element. これによって、発光効率が良好で且つ輝度ムラの少ない発光装置が得られる。 Thus, less light emitting device emission efficiency of good and uneven brightness can be obtained.

【0012】また、本発明に係る発光装置の形成方法は、基板上に半導体層を有する発光素子と、該発光素子からの光の一部を吸収してそれよりも長波長の光が発光可能な蛍光物質と、該蛍光物質を有し前記発光素子の表面を包囲する透光性モールド部材とを有する発光装置の形成方法であって、ウエハーの状態で前記発光素子の電極上にバンプを形成する第1の工程と、前記発光素子の半導体層側に前記バンプを覆うように前記透光性モールド部材となる材料を被覆させる第2の工程と、前記透光性モールド部材となる材料を硬化させた後、研磨により半導体層側から前記ウエハー底面と平行にバンプの上面を露出させる第3の工程と、前記ウエハーをダイシング且つスクライブすることにより切断する第4の工程とを有する。 Further, the method of forming the light-emitting device according to the present invention includes a light-emitting element, the light is also a long wavelength than it absorbs part of the light from the light emitting element can emit having a semiconductor layer on a substrate forming a fluorescent substance such a method of forming a light emitting device having a light-transmitting mold member surrounding the surface of the light emitting device having a fluorescent substance, a bump on the electrode of the light emitting element in a state of the wafer curing a first step, a second step of coating said the translucent mold member material to cover the bumps on the semiconductor layer side of the light emitting element, a material to be the light-transmitting mold members after, and a third step of exposing the upper surface of the bump in parallel to the wafer bottom surface from the semiconductor layer side by polishing, and a fourth step of cutting by dicing and scribing the wafer. これによって量産性よく発光装置を形成することができる。 This makes it possible to form a mass with good light-emitting device.

【0013】また、前記第3の工程において、前記各バンプの膜厚が5μm〜150μmとなるように研磨される。 Further, in the third step, the film thickness of each bump is polished so as to 5Myuemu~150myuemu. これによって、前記第2の工程で形成されたモールド部材中の蛍光物質を破壊することなく良好に研磨することができ、信頼性が高く均一に発光することが可能な発光装置が得られる。 Thus, the can be satisfactorily polished without destroying the second fluorescent substance of the mold member in which are formed in the process, the light emitting apparatus capable of reliable high uniform light emission can be obtained.

【0014】また、前記第4の工程後、前記発光素子の少なくとも基板側に連続した透光性モールド部材を形成することを特徴とする。 Further, after the fourth step, and forming a translucent mold member which is continuous in at least the substrate side of the light emitting element. これによって得られる発光装置は、外部電極と電気的に接合されるバンプ上面以外の外周全面に蛍光物質含有の透光性モールド部材を有することができ、信頼性が高く且つ色純度の高い発光装置が得られる。 Emitting device thereby obtained may have a light-transmitting mold member phosphor contained in the outer peripheral entire non bumps top surface is the external electrode and electrically joined, reliable and high color purity emitting device It is obtained.

【0015】また、前記第4の工程後、前記発光素子の少なくとも基板側に連続した反射膜を形成することを特徴とする。 Further, after the fourth step, and forming a reflection film which is continuous in at least the substrate side of the light emitting element. これによって、発光素子の基板側から放射される光を半導体層側へ導くことができ、更に色ムラが少なく且つ発光出力の高い発光装置が得られる。 This makes it possible to guide the light emitted from the substrate side of the light emitting element to the semiconductor layer side, further color unevenness less and emitting output light-emitting device with high obtained.

【0016】 [0016]

【発明の実施の形態】本発明者は、種々実験の結果、素子を電気的に接続する前に色変換部材である蛍光物質含有の透光性モールド部材を設けることにより、後の実装工程が簡略化でき且つ信頼性の高い色変換型発光装置が得られることを見いだし本発明を成すに至った。 DETAILED DESCRIPTION OF THE INVENTION The present inventors have, as a result of various experiments, by providing a light-transmitting mold member phosphor containing a color conversion member prior to electrically connecting the elements, mounting a later step simplification can and reliable color conversion-type light emitting device has accomplished the present invention found that the resulting.

【0017】従来、波長変換型LEDランプを形成する場合、素子分割された各素子に対して凸レンズ部材とは別に予め蛍光物質含有のモールド部材を設ける必要があった。 [0017] Conventionally, when forming a wavelength conversion LED lamp, it is necessary to provide the mold members apart advance fluorescent substance containing the lens member with respect to the elements which are elements divided. 具体的には次のような過程が必要となる。 Processes such as the following are required in particular.

【0018】チップ状の各素子をマウントリードのカップ内底部に配置し、前記素子の各電極をリード電極とワイヤー等で電気的に接続した後、まず、素子とワイヤーを覆うようにカップ内にディスペンサ等により蛍光物質を含有させた樹脂を滴下注入し加熱硬化させて色変換部材を形成する。 [0018] Place the cup bottom inside of the mount lead the elements of the chip-, after electrically connecting lead electrodes and wires or the like of each electrode of the device, first, into the cup to cover the element and the wire a resin containing a fluorescent substance is instilled thermally cured by a dispenser or the like to form a color conversion member. このようにして第1モールド部材が形成される。 Thus the first mold member is formed as described above.

【0019】その後、凸レンズ部材の材料である樹脂をキャスティングケース内に流し込むと共に、色変換部材が形成されたリード先端部分を浸漬配置させる。 [0019] Thereafter, with flowing the resin which is the material of the convex lens member in a casting case, immersing placing lead tip portions color conversion member is formed. これをオーブンに入れ加熱硬化させることにより第2モールド部材である凸レンズ部材が形成され、波長変換可能なL This is a convex lens member is a second mold member by heat curing in an oven is formed, the wavelength conversion can be L
EDランプが形成される。 ED lamp is formed.

【0020】このように1つの発光装置を形成するにあたり、各素子に対して樹脂を充填させ硬化させる工程が、2度必要となり、樹脂効果のための待留時間が比較的長く、更なる生産性の向上が望まれている。 [0020] In forming this way one light emitting device, curing is filled with a resin for each element, twice required, wait distillate time for the resin effect is relatively long, a further production sexual improvement are desired.

【0021】また、発光装置が小型化になるにつれて必然的に第1モールド部材量も少量となり、各素子に対して精度良く所望の混色光を得るために必要な蛍光物質量を配置させることは極めて困難であり、個々の発光装置において色度バラツキが生じ歩留まりが悪かった。 Further, the light emitting device becomes small quantities inevitably first mold member amount as will compact, thereby placing the fluorescent substance amount required to obtain a high accuracy desired mixed color light for each element is very difficult, chromaticity variation yield occurs poor in the individual light-emitting device.

【0022】また、前記発光装置は、発光素子を半導体層を上面として電気的に接続した後に色変換部材を設けるため、前記色変換部材中にワイヤー等を有する。 Further, the light emitting apparatus, for providing a color conversion member after electrically connecting the light emitting element of the semiconductor layer as a top, a wire or the like in the color conversion member. このような電気接続部材が、蛍光物質の配置に悪影響を及ぼしたり前記蛍光物質及び発光素子の光取り出し効率を低下させ、色ムラや出力低下を引き起こすと考えられる。 Such electrical connection member reduces light extraction efficiency of the fluorescent substance and a light emitting device or adversely affect the arrangement of the fluorescent material, is believed to cause color unevenness and output reduction.

【0023】そこで本発明は、上記の問題を解決するため、発光素子自体に色変換部材を設けるものである。 [0023] The present invention, in order to solve the above problems, is intended to provide a color conversion member to the light emitting element itself. 具体的には、個々の発光素子に分割される前のウエハー状態にて前記発光素子の電極部分を嵩上げし、発光素子周囲に色変換部材を設ける。 Specifically, it raised the electrode portion of the light emitting element in front of a wafer state is divided into individual light emitting devices, providing the color conversion member around the light emitting element. このように構成することにより、十分に信頼性が高く且つ光学特性に優れた色変換型発光装置を生産性よく形成することができる。 With this configuration, it is possible to form good enough productivity color conversion-type light emitting device of which reliability has excellent high and optical properties.

【0024】以下、図を参照にして本発明に係る実施の形態について説明する。 [0024] The following describes embodiments according to the present invention with reference to FIG. 図1は本発明の一実施の形態に係る発光ダイオードの模式的断面図である。 Figure 1 is a schematic cross-sectional view of a light emitting diode according to an embodiment of the present invention. 絶縁性基板上1に、少なくともn型窒化物半導体層2、活性層(図示されていない)、及びp型窒化物半導体層3が順に積層形成され、p型窒化物半導体層3のほぼ全面に形成された透明な第1正電極4と、第1正電極4上の一部に形成されたボンディング用の第2正電極5と、p型窒化物半導体層3側からエッチング等により露出されたn型窒化物半導体層2上に負電極6とを有し、各電極のボンディング面を除いて絶縁性保護膜7が形成されてなる発光素子を用いている。 An insulating substrate 1, at least n-type nitride semiconductor layer 2, the active layer (not shown), and a p-type nitride semiconductor layer 3 is laminated in this order, over substantially the entire surface of the p-type nitride semiconductor layer 3 and formed a transparent first positive electrode 4, a second positive electrode 5 for formed bonding a part of the first positive electrode 4 was exposed by etching from the p-type nitride semiconductor layer 3 side and a negative electrode 6 on the n-type nitride semiconductor layer 2, using the light-emitting element insulating protection film 7 is formed except the bonding surface of each electrode. このような発光素子の各電極のボンディング面上にそれぞれバンプ8が設けられ、これらのバンプの上面を露出させて発光素子の半導体層側上面及び側面に蛍光物質含有の透光性モールド部材9を設けている。 Such respective bumps 8 on the bonding surface of each electrode of the light emitting elements are provided, the light-transmitting mold member 9 to expose the upper surface of these bumps fluorescent substance contained in the semiconductor layer side upper and side surfaces of the light emitting element It is provided. 以下、本発明の各構成について詳述する。 It described in detail below each arrangement of the present invention.

【0025】(発光素子)本発明において、発光素子からの光は、蛍光物質から放出される光よりも短波長であると効率がよい。 [0025] In (light emitting element) In the present invention, light from the light emitting element is more efficient and is shorter than the light emitted from the fluorescent substance. そのため、高効率に発光輝度の高い可視光を発光可能な半導体素子として、窒化物半導体(I Therefore, a high visible light emission luminance as capable of emitting semiconductor device with high efficiency, a nitride semiconductor (I
Ga Al 1−x−y N、0≦x≦1、0≦y≦ n x Ga y Al 1-x -y N, 0 ≦ x ≦ 1,0 ≦ y ≦
1)を活性層に利用したものが好適に挙げられる。 1) which utilizes the active layer is preferably exemplified. 窒化物半導体を利用した発光素子は、サファイア基板、スピネル(MgAi )基板、SiC、GaN単結晶等の上に形成させることができるが、量産性と結晶性を満たすにはサファイア基板を用いることが好ましい。 Light-emitting elements using nitride semiconductor, a sapphire substrate, a spinel (MgAi 2 O 4) substrate, SiC, may be formed on the GaN single crystal or the like, a sapphire substrate to meet crystalline mass productivity it is preferably used. よって、本発明では、n型及びp型の窒化物半導体層が絶縁性基板であるサファイア基板上に形成され、半導体層側に両電極を有する発光素子を用いている。 Therefore, in the present invention, n-type and p-type nitride semiconductor layer is formed on a sapphire substrate is an insulating substrate, and using a light-emitting element having the electrodes on the semiconductor layer side.

【0026】さらに詳細に説明すると、発光素子は、サファイア基板1上に1又は2以上の層からなるn型窒化物半導体層2、活性層(図示せず)、1又は2以上の層からなるp型窒化物半導体層3が積層され、更に正及び負の電極が以下のように形成されている。 [0026] In more detail, the light emitting device, n-type nitride semiconductor layer 2 made of one or more layers on a sapphire substrate 1, (not shown) the active layer, made of one or more layers p-type nitride semiconductor layer 3 is laminated, further the positive and negative electrodes are formed as follows. すなわち、正電極は、p型窒化物半導体層のほぼ全面に形成された第1正電極4と該第1正電極上の一部に形成されたボンディング用の第2正電極5とからなり、負電極6はp型窒化物半導体層の一部をドライエッチング等により除去して露出させたn型窒化物半導体層の表面に形成されている。 That is, the positive electrode comprises a first positive electrode 4 and the first second bonding formed on a part of the positive electrode positive electrode 5 which is formed on substantially the entire surface of the p-type nitride semiconductor layer, negative electrode 6 is formed with a part of the p-type nitride semiconductor layer on the surface of the n-type nitride semiconductor layer exposed is removed by dry etching or the like.

【0027】本発明において、n型窒化物半導体層2及びp型窒化物半導体層3は特に限定されず、いずれの層構成のものを用いても良い。 [0027] In the present invention, n-type nitride semiconductor layer 2 and the p-type nitride semiconductor layer 3 is not particularly limited, and may also be used as any layer structure.

【0028】本発明の発光装置において白色系を発光させる場合は、蛍光物質との補色関係や樹脂の劣化等を考慮して、発光素子の主発光ピークは400nm以上53 [0028] When light emission of white in the light emitting device of the present invention, in consideration of such complementary color relationship and resin degradation of the fluorescent substance, the main emission peak of the light emitting element is 400nm or more 53
0nm以下が好ましく、より好ましくは420nm以上490nm以下である。 The following are preferred 0 nm, more preferably 420nm or more 490nm or less. 発光素子と蛍光物質との効率をそれぞれ向上させるためには450nm以上470nm 450nm or 470nm in order to improve the efficiency of the light emitting element and the fluorescent substance, respectively
以下に主発光ピークを有する発光素子を用いることが更に好ましい。 It is more preferable to use a light-emitting element having a main emission peak in.

【0029】一方、本発明の発光装置において、発光素子の周囲に蛍光物質含有の透光性モールド部材を有する場合、比較的紫外線に強い樹脂やガラス等を使用し、4 On the other hand, in the light-emitting device of the present invention, when a light-transmitting mold member of a fluorescent material-containing around the light emitting element, using a strong resin, glass or the like in a relatively ultraviolet, 4
00nm付近の短波長を主発光ピークとする紫外線が発光可能な発光素子を用いて白色系が発光可能な発光装置を得ることもできる。 The short wavelength near 00nm ultraviolet rays capable of emitting light-emitting element as a main emission peak white can also be obtained capable of emitting light emitting device using. このような短波長の光により赤、 Red by the light of such short wavelength,
青、及び緑に蛍光可能な蛍光物質、例えば赤色蛍光体としてY S:Eu、青色蛍光体としてSr (PO Blue, and fluorescence fluorescent substance in green, for example, as a red phosphor Y 2 O 2 S: Eu, Sr 5 (PO as a blue phosphor
Cl:Eu、及び緑色蛍光体として(SrEu) 4) 3 Cl: Eu, and a green phosphor (SrEu)
O・Al を前記耐紫外線樹脂などに含有させ、短波長発光の発光素子の表面に色変換層として塗布することにより、白色光を得ることができる。 The O · Al 2 O 3 is contained, such as the UV resistant resin, by applying the color conversion layer on the surface of the light emitting element of short wavelength emission, it is possible to obtain white light.

【0030】本発明の一実施の形態では、発光素子の電極上に配置されたバンプの表面を開口部として前記発光素子の周囲全てに色変換層である透光性モールド部材を有する。 [0030] In an embodiment of the present invention has a light-transmitting sealing member, which is a color conversion layer on all the periphery of the light emitting element of the surface of the bump disposed on the electrode of the light emitting element as an opening. これにより前記発光素子の四方八方から発光される光は、周囲に配置された蛍光物質により効率よく吸収され波長変換された後、放出される。 This light emitted from all directions of the light emitting element by, after being wavelength is absorbed efficiently converted by the fluorescent material disposed around and released. このため、紫外線によって発光装置が劣化されることなく、信頼性の高い白色系発光装置が得られる。 Therefore, without the light-emitting device by ultraviolet rays it is degraded, a white light-emitting device having high reliability can be obtained.

【0031】また白色光を得るために、紫外線が発光可能な発光素子と組み合わせて用いられる蛍光物質として、上記した他に、赤色蛍光体として3.5MgO・ [0031] In order to obtain white light, as the fluorescent substance used in combination with ultraviolet rays capable of emitting light-emitting device, in addition to the above, 3.5MgO.0.5MgF · as a red phosphor
0.5MgF ・GeO :Mn、Mg As 0.5MgF 2 · GeO 2: Mn, Mg 6 As
11 :Mn、Gd :Eu、LaO S:E 2 O 11: Mn, Gd 2 O 2: Eu, LaO 2 S: E
u、青色蛍光体としてRe (PO Cl:Eu u, Re 5 (PO 4) as a blue phosphor 3 Cl: Eu
(ただしReはSr、Ca、Ba、Mgから選択される少なくとも一種)、BaMg Al 1627 :Eu等が好適に用いられる。 (Where Re is Sr, Ca, Ba, at least one selected from Mg), BaMg 2 Al 16 O 27: Eu or the like is preferably used. これらの蛍光物質は、紫外光による発光が飛躍的に優れているため、高輝度に発光可能な白色発光装置を得ることができる。 These fluorescent materials, since the light emission due to ultraviolet light is better dramatically, light emission can be obtained capable white light emitting device with high luminance.

【0032】本発明において第1正電極4は、p型窒化物半導体層とオーミック接触可能な電極材料であれば特に限定されない。 The first positive electrode 4 in the present invention is not particularly limited as long as the p-type nitride semiconductor layer and the ohmic contact can be an electrode material. 例えば、Au、Pt、Al、Sn、C For example, Au, Pt, Al, Sn, C
r、Ti、Ni、Co等の1種類以上を用いることができる。 Can be used r, Ti, Ni, one or more of Co or the like. また、第1正電極は、実装形態に合わせて、膜厚を調整することで透光性、不透光性に調整することができるが、本発明では第1正電極は透光性となるように膜厚を調整している。 Also, the first positive electrode, in accordance with the implementation, light-permeable by adjusting the film thickness, can be adjusted to opaque, the first positive electrode in the present invention will become translucent so as to adjust the film thickness so. 透光性となるためには、膜厚は10 To become translucent, the thickness of 10
オングストローム〜500オングストローム、好ましくは10オングストローム〜200オングストロームに設定される。 Angstroms to 500 Angstroms, are set preferably to 10 Angstroms to 200 Angstroms.

【0033】また、第2正電極5としては、Au、P Further, as the second positive electrode 5, Au, P
t、Al、Sn、Cr、Ti、Ni等の1種類以上の金属材料を用いることができる。 t, can be used Al, Sn, Cr, Ti, one or more metallic materials such as Ni. 第2正電極の膜厚は、1 The thickness of the second positive electrode is 1
000オングストローム〜2μmに設定されるのが好ましい。 Preferably set to 000 angstroms ~2Myuemu.

【0034】本発明において負電極6は、n型窒化物半導体とオーミック接触が可能な電極材料であれば特に限定されない。 The negative electrode 6 in the present invention is not particularly limited as long as the electrode material capable of n-type nitride semiconductor ohmic contact. 例えば、Ti、Al、Ni、Au、W、V For example, Ti, Al, Ni, Au, W, V
等の金属材料の1種類以上を用いることができるが、T Can be used one or more metallic materials etc., T
i、W、VをそれぞれベースとするTi/Al、W/A i, W, respectively V based Ti / Al, W / A
l/W/Au、W/Al/W/Pt/Au、V/Al等の多層構造とすることが好ましい。 l / W / Au, W / Al / W / Pt / Au, is preferably a multi-layer structure such as V / Al. n型窒化物半導体層とオーミック接触が可能な電極材料を用いることによりV を低減させることができる。 it is possible to reduce the V f by using an n-type nitride semiconductor layer and the ohmic contact can electrode material. 負電極7の膜厚は、2 Thickness of the negative electrode 7, 2
000オングストローム〜5μm、好ましくは5000 000 angstroms ~5μm, preferably 5000
オングストローム〜1.5μmに設定される。 It is set to angstroms ~1.5μm.

【0035】本発明において、正負の電極間の短絡を防止するため、各電極のバンプ形成面を開口部として、半導体層の表面に絶縁性保護膜7を設けることが好ましい。 [0035] In the present invention, in order to prevent a short circuit between the positive and negative electrodes, the bump formation faces of each electrode as an opening, it is preferable to provide an insulating protection film 7 on the surface of the semiconductor layer. また、絶縁性保護膜を各電極の上面に少しかかるように形成すると、各電極が接している下地層とはがれるのを抑制することができ好ましい。 Further, by forming the insulating protective film a little according as the upper surface of each electrode, preferably it is possible to suppress the peeling an underlayer which each electrode is in contact. 絶縁性保護膜の材料としては、主波長において透過率が良好で、且つ第1正電極、第2正電極、及び負電極との接着性が良好であれば特に限定されない。 As the material of the insulating protective film, the transmittance is satisfactory in the main wavelength, and the first positive electrode, adhesion between the second positive electrode, and the negative electrode is not particularly limited as long as it is good. また、短波長領域の光をカットする材料を用いると好ましい。 Further, preferably a material which cuts the light in the short wavelength region. 例えば、ケイ酸アルカリガラス、ソーダ石灰ガラス、鉛ガラス、バリウムガラス等のガラス組成物、またはSiO 、TiO For example, alkali silicate glass, soda lime glass, lead glass, the glass composition such as barium glass, or SiO 2, TiO 、Ge 2, Ge
、及びTa 等の酸化物が好ましく形成される。 O 2, and oxides such as Ta 2 O 5 is preferably formed. また、膜厚は特に限定されるものではないが、主波長における透過率が90%以上に調整されることが好ましい。 The film thickness is not particularly limited, it is preferable that the transmittance at the main wavelength is adjusted to 90%.

【0036】(バンプ)本発明において、発光素子は電極上に少なくとも1つのバンプを有し、該バンプの上面は、前記バンプの側面に接して配置された透光性モールド部材の上面と略同一平面である。 [0036] In (bump) present invention, the light-emitting element has at least one bump on the electrode, the upper surface of the bump is approximately equal to the upper surface of the disposed in contact with a side surface of the bump translucent mold member is a plan. このように、バンプの上面及び透光性モールド部材の上面にて略同一平面を構成することにより、実装が容易で且つ信頼性の高い発光装置が得られる。 Thus, by forming the substantially the same plane at the upper surface of the upper surface and the light-transmitting mold member of the bump, it is easy to implement and highly reliable light-emitting device is obtained.

【0037】前記バンプは、まず発光素子が個々に切断される前のウエハー状態において、各素子の電極のボンディング面上に形成される(第1の工程)。 [0037] The bumps in a wafer state before the first light emitting element is cut into individual, it is formed on the bonding surface of the electrode of each element (the first step). バンプの材料は、Au、Pt等の金属材料を用いると各電極との密着性及び導電性に優れたバンプを得ることができる。 Material of the bumps can be obtained Au, and using a metal material such as Pt excellent bump adhesion and conductivity between the electrodes. バンプボンダーにて前記金属材料を前記各ボンディング面上に圧着形成させる。 It said metallic material is crimped formed on the respective bonding surfaces at the bump bonder. バンプ上面の中央先端部分に生ずる突起部分をレベラーにて押圧し平坦化すると、底面側から上面側までほぼ等しい幅を有するバンプを形成することができる。 When pressing the protrusion occurring at the center tip portion of the bump top at leveler to flatten, it is possible to form a bump having a width substantially equal to the bottom side to the top surface side. また前記押圧を調整することでバンプの側面の形状を調整することができる。 Also it is possible to adjust the shape of the side surface of the bump by adjusting the pressing. バンプの側面はテーパー形状であることが好ましく、透光性モールド部材中の蛍光物質及び発光素子から発光される光を前記側面にて良好に反射散乱させることで光の取り出し効率を向上させることができる。 Preferably the side surface of the bump is tapered, that the light emitted from the fluorescent substance and a light-emitting element in the translucent mold member to improve the extraction efficiency of light be favorably reflected scattered at the side it can.

【0038】前記金属材料の場合、バンプは20〜50 [0038] In the case of the metal material, bump from 20 to 50
μmの高さで形成することが好ましい。 It is preferably formed at a height of [mu] m. また、バンプをメッキ等の材料を用いて厚膜に形成することも可能である。 It is also possible to form a thick film bumps using a material such as plating. 例えば、無電解Niメッキにて5〜150μmの高さで形成することができる。 For example, it can be formed at a height of 5~150μm in electroless Ni plating. また、バンプを無電解Ni In addition, non-electrolytic bump Ni
メッキ上に無電解Auメッキを設けた2層構成にすることもできる。 It can also be a two-layer structure in which a non-electrolytic Au plating on the plating. 例えば、無電解Niメッキを5〜100μ For example, 5~100μ the electroless Ni plating
mの高さで形成し、前記無電解Niメッキ上に無電解A Formed at a height of m, electroless A on the electroless Ni plating
uメッキを5000オングストローム以下の高さで形成すると、ボンディング性が良好となり好ましい。 When the u plating formed by the following height 5000 angstroms, preferably bondability is improved. このようにバンプが形成された素子の半導体層側に蛍光物質含有の透光性モールド部材を設け(第2の工程)、蛍光物質の粒径を考え、前記透光性モールド部材上面と前記バンプの上面が略同一平面を成すように、またバンプ全体の膜厚が5μm〜150μm、好ましくは5μm〜10 Thus provided the translucent mold member phosphor contained in the semiconductor layer side of the bumps are formed element (second step), consider the particle size of the fluorescent substance, the said light-transmitting mold member upper surface bumps the upper surface so as to form substantially the same plane, also the total thickness of the bump 5Myuemu~150myuemu, preferably 5μm~10
0μm、より好ましくは50μm〜100μmとなるように前記透光性モールド部材と前記バンプを同時に研磨してバンプの表面を露出させる(第3の工程)。 0 .mu.m, more preferably simultaneously polishing the bump and the light-transmitting mold member so that 50μm~100μm to expose the surface of the bump (the third step). このように、バンプの高さを前記範囲にすることにより色調ムラが抑制され、良好な光学特性を有する発光装置が得られる。 Thus, tone unevenness is suppressed by the height of the bump in the range, the light emitting device is obtained having good optical properties.

【0039】また、本実施の形態で用いられた発光素子のように、同一面側に正負一対の電極を有し可視光を発光する発光素子の場合、負電極付近の電流密度が高くなり色ムラが生じる傾向にある。 Further, as in the light-emitting element used in this embodiment, when the light-emitting device that emits visible light having a pair of positive and negative electrodes on the same side, high current density in the vicinity of the negative electrode is color there is a tendency that unevenness. 本発明では、前記発光素子の各電極上にバンプを設け、該バンプの上面が光取り出し面である透光性モールド部材上面と略同一平面となるように構成することにより、各電極間に生じる色ムラを改善することができ、均一に発光することが可能な発光装置が得られる。 In the present invention, a bump is provided on each electrode of the light emitting element, by the upper surface of the bump is configured such that the translucent mold member upper surface substantially flush is a light extraction surface, occurs between the electrodes It can improve the color unevenness, which is capable of uniformly emitting light-emitting device is obtained.

【0040】(蛍光物質)本発明の発光装置に用いられる蛍光物質は、窒化物系半導体を発光層とする半導体発光素子から発光された光を励起させて発光できるセリウムで付活されたイットリウム・アルミニウム酸化物系蛍光物質をベースとしたものである。 The phosphor used in the light emitting device of the (fluorescent substance) present invention, yttrium which has been activated with cerium that can emit light to excite the light emitting nitride semiconductor from the semiconductor light emitting element to the light-emitting layer the aluminum oxide-based fluorescent material is obtained by a base. 具体的なイットリウム・アルミニウム酸化物系蛍光物質としては、YAlO Specific yttrium aluminum oxide fluorescent substance, YAlO
:Ce、Y Al 12 Y:Ce(YAG:Ce) 3: Ce, Y 3 Al 5 O 12 Y: Ce (YAG: Ce)
やY Al :Ce、更にはこれらの混合物などが挙げられる。 And Y 4 Al 2 O 9: Ce , further include a mixture thereof. イットリウム・アルミニウム酸化物系蛍光物質にBa、Sr、Mg、Ca、Znの少なくとも一種が含有されていてもよい。 Ba in yttrium aluminum oxide fluorescent substance, Sr, Mg, Ca, at least one of Zn may be contained. また、Siを含有させることによって、結晶成長の反応を抑制し蛍光物質の粒子を揃えることができる。 Further, by containing Si, it is possible to align the particles to quench the reaction of the crystal growth fluorescent substance.

【0041】本明細書において、Ceで付活されたイットリウム・アルミニウム酸化物系蛍光物質は特に広義に解釈するものとし、イットリウムの一部あるいは全体を、Lu、Sc、La、Gd及びSmからなる群から選ばれる少なくとも1つの元素に置換され、あるいは、アルミニウムの一部あるいは全体をBa、Tl、Ga、I [0041] In this specification, Ce activated with the yttrium aluminum oxide fluorescent substance shall particularly be interpreted broadly, a part or all of the yttrium, composed of Lu, Sc, La, Gd and Sm substituted with at least one element selected from the group, or a part of aluminum or an entire Ba, Tl, Ga, I
nの何れが又は両方で置換され蛍光作用を有する蛍光体を含む広い意味に使用する。 Substituted with either the or both n used in a broad sense including a phosphor having fluorescence action.

【0042】更に詳しくは、一般式(Y Gd 1−z [0042] More specifically, the general formula (Y z Gd 1-z)
Al 12 :Ce(但し、0<z≦1)で示されるフォトルミネッセンス蛍光体や一般式(Re 1−a Sm 3 Al 5 O 12: Ce (where, 0 <z ≦ 1) photoluminescence phosphor and the general formula represented by (Re 1-a Sm
a) Re' 12 :Ce(但し、0≦a<1、0≦ 3 Re '5 O 12: Ce ( where, 0 ≦ a <1,0 ≦
b≦1、Reは、Y、Gd、La、Scから選択される少なくとも一種、Re'は、Al、Ga、Inから選択される少なくとも一種である。 b ≦ 1, Re is at least one selected Y, Gd, La, from Sc, Re 'is at least one selected Al, Ga, from In. )で示されるフォトルミネッセンス蛍光体である。 ) Is a photoluminescence phosphor indicated by.

【0043】この蛍光物質は、ガーネット構造のため、 [0043] The fluorescent substance is, because of garnet structure,
熱、光及び水分に強く、励起スペクトルのピークを45 Heat, resistant to light and moisture, the peak of the excitation spectrum 45
0nm付近にさせることができる。 It can be in the vicinity of 0nm. また、発光ピークも、580nm付近にあり700nmまですそを引くブロードな発光スペクトルを持つ。 Furthermore, the emission peak also has a broad emission spectrum catching hem to 700nm is in the vicinity of 580 nm.

【0044】またフォトルミネセンス蛍光体は、結晶中にGd(ガドリニウム)を含有することにより、460 [0044] The photoluminescent phosphor is, by containing Gd (gadolinium) in the crystal, 460
nm以上の長波長域の励起発光効率を高くすることができる。 nm or more can be increased excitation luminous efficiency in the long wavelength region. Gdの含有量の増加により、発光ピーク波長が長波長に移動し全体の発光波長も長波長側にシフトする。 The increase in the content of Gd, the emission wavelength of the entire emission peak wavelength is shifted to a longer wavelength also shifts to the long wavelength side.
すなわち、赤みの強い発光色が必要な場合、Gdの置換量を多くすることで達成できる。 That is, if reddish emission color is needed, can be achieved by increasing the amount of substitution Gd. 一方、Gdが増加すると共に、青色光によるフォトルミネセンスの発光輝度は低下する傾向にある。 On the other hand, the Gd is increased, the light emission luminance of photoluminescence by the blue light tends to decrease. さらに、所望に応じてCeに加えTb、Cu、Ag、Au、Fe、Cr、Nd、Dy、C Furthermore, Tb addition to Ce if desired, Cu, Ag, Au, Fe, Cr, Nd, Dy, C
o、Ni、Ti、Euらを含有させることもできる。 o, Ni, Ti, can be contained Eu et al.

【0045】しかも、ガーネット構造を持ったイットリウム・アルミニウム・ガーネット系蛍光体の組成のうち、Alの一部をGaで置換することで発光波長が短波長側にシフトする。 [0045] Moreover, among the composition of the yttrium-aluminum-garnet phosphor having a garnet structure, the emission wavelength by substituting part of Al with Ga is shifted to the shorter wavelength side. また、組成のYの一部をGdで置換することで、発光波長が長波長側にシフトする。 In addition, by substituting a part of Y of the composition with Gd, the emission wavelength is shifted to the long wavelength side.

【0046】Yの一部をGdで置換する場合、Gdへの置換を1割未満にし、且つCeの含有(置換)を0.0 [0046] If a part of Y is substituted with Gd, the substitution of Gd to less than 10%, and containing Ce (substituted) 0.0
3から1.0にすることが好ましい。 3 is preferably set to 1.0. Gdへの置換が2 Substitution of Gd 2
割未満では緑色成分が大きく赤色成分が少なくなるが、 Although red component green component is large is reduced is less than the split,
Ceの含有量を増やすことで赤色成分を補え、輝度を低下させることなく所望の色調を得ることができる。 Compensate the red component by increasing the content of Ce, it is possible to obtain a desired color tone without reducing the brightness. このような組成にすると温度特性が良好となり発光ダイオードの信頼性を向上させることができる。 To the temperature characteristics in such compositions can improve the reliability of the light emitting diode becomes excellent. また、赤色成分を多く有するように調整されたフォトルミネセンス蛍光体を使用すると、ピンク等の中間色を発光することが可能な発光装置を形成することができる。 Further, by using the adjusted photoluminescent phosphor to have much red component makes it possible to form a light emitting device capable of emitting an intermediate color of pink or the like.

【0047】このようなフォトルミネセンス蛍光体は、 [0047] Such a photoluminescent phosphors,
Y、Gd、Al、及びCeの原料として酸化物、又は高温で容易に酸化物になる化合物を使用し、それらを化学量論比で十分に混合して原料を得る。 Y, Gd, Al, and oxides as a raw material for Ce, or using readily become oxide compounds at high temperatures, to obtain a raw material mixed thoroughly them in stoichiometric proportions. 又は、Y、Gd、 Or, Y, Gd,
Ceの希土類元素を化学量論比で酸に溶解した溶解液を蓚酸で共沈したものを焼成して得られる共沈酸化物と、 A coprecipitated oxide obtained a solution, which is obtained by dissolving rare earth elements of Ce in an acid in a stoichiometric ratio by firing those coprecipitated with oxalic acid,
酸化アルミニウムとを混合して混合原料を得る。 Obtaining a mixed raw material by mixing the aluminum oxide. これにフラックスとしてフッ化バリウムやフッ化アンモニウム等のフッ化物を適量混合して坩堝に詰め、空気中135 This packed into a crucible and mixed with an appropriate amount of a fluoride such as ammonium fluoride, barium fluoride and as a flux in the air 135
0〜1450°Cの温度範囲で2〜5時間焼成して焼成品を得、つぎに焼成品を水中でボールミルして、洗浄、 Calcined 2-5 hours at a temperature range of 0 to 1450 ° C to obtain a calcined product, and a ball mill then the fired product in water, washing,
分離、乾燥、最後に篩を通すことで得ることができる。 Separated, dried, and finally can be obtained by passing a sieve.

【0048】本願発明の発光ダイオードにおいて、このようなフォトルミネセンス蛍光体は、2種類以上のセリウムで付活されたイットリウム・アルミニウム・ガーネット蛍光体や他の蛍光体を混合させてもよい。 [0048] In the light emitting diode of the present invention, such photoluminescent phosphor, two or more yttrium-aluminum-garnet phosphor is cerium-activated and other phosphors may be mixed.

【0049】他にも青色、青緑色や緑色を吸収して赤色が発光可能な蛍光体としては、Eu及び/又はCrで付活されたサファイア(酸化アルミニウム)蛍光体やEu [0049] Other blue also, as the blue-green or green and absorbs red capable of emitting phosphor, sapphire, which is activated by Eu and / or Cr (aluminum oxide) phosphor and Eu
及び/又はCrで付活された窒素含有Ca−Al And / or nitrogen is activated with Cr-containing Ca-Al 2 O 3
−SiO 蛍光体(オキシナイトライド蛍光硝子)等が挙げられる。 -SiO 2 phosphor (oxynitride fluorescent glass) and the like. これらの蛍光体を利用して発光素子からの光と蛍光体からの光の混色により白色光を得ることもできる。 The mixing of light from light and phosphor from the light emitting element by utilizing these phosphors can be obtained white light.

【0050】また、蛍光体が含有される透光性モールド部材の粘度や蛍光体の粒径が形成時の量産性に影響する。 [0050] The particle size of the viscosity and the phosphor of the translucent mold member in which the phosphor is contained affects the productivity of the formation. すなわち、透光性モールド部材となる材料の粘度が低い場合や、蛍光体の粒径が大きい場合は透光性モールド部材となる材料との比重差による分離沈降が促進する傾向にある。 That is, if the viscosity of the material to be translucent mold member is low or when the particle size of the phosphor is greater tends to promote separation precipitation with specific gravity difference with the material to be translucent mold member. また、粉砕工程での結晶破壊などにより、 Further, due to the crystal destruction in the grinding step,
無機蛍光体では粒径が小さくなると変換効率が低下する傾向にある。 It tends to decrease the conversion efficiency particle diameter is smaller than inorganic phosphor. さらに、あまり小さくなりすぎると凝集体を構成するために透光性モールド部材中への分散性が低下し発光装置からの色ムラや輝度ムラを引き起こす傾向にある。 Furthermore, there is a tendency to cause color unevenness and brightness unevenness from the light emitting device dispersibility in the translucent mold member in drops to configure the agglomerates with too much reduced. そのため、透光性モールド部材の材料や蛍光体にもよるが、蛍光体の平均粒径は1〜100μmが好ましく、5〜50μmがより好ましい。 Therefore, although depending on the material and the phosphor of the translucent mold member, the average particle size of the phosphor is preferably 1 to 100 [mu] m, 5 to 50 [mu] m is more preferable. ここで平均粒径とは、空気透過法を基本原理としてサブシーブサイザーにて測定された平均粒子径を示す。 Here the average particle size and exhibits an average particle diameter as measured by the sub-sieve sizer air permeability method as basic principle.

【0051】また、発光出力を向上させるためには、本発明で用いられる蛍光物質の平均粒径は10μm〜50 [0051] In order to improve the emission output, the average particle size of the fluorescent material used in the present invention 10μm~50
μmが好ましく、より好ましくは15μm〜30μmである。 μm, and more preferably from 15μm~30μm. このような粒径を有する蛍光物質は光の吸収率及び変換効率が高く且つ励起波長の幅が広い。 Phosphor absorption and conversion efficiency is high and the width of the excitation wavelength of the light is wide having such a particle size. このように、光学的に優れた特徴を有する大粒径蛍光物質を含有させることにより、発光素子の主波長周辺の光をも良好に変換し発光することが可能となり、発光装置の量産性が向上される。 Thus, by containing a large 径蛍 light material having optically superior features, also the light of the main wavelength around the light emitting device it is possible to satisfactorily converted emission, mass productivity of the light emitting device is It is improved.

【0052】また、この平均粒径値を有する蛍光物質が頻度高く含有されていることが好ましく、頻度値は20 [0052] Further, it is preferable that the fluorescent substance having an average particle diameter value is contained high frequency, the frequency value 20
%〜50%が好ましい。 % To 50% is preferred. このように粒径のバラツキが小さい蛍光物質を用いることにより色ムラが抑制され良好な色調を有する発光装置が得られる。 Thus light-emitting device having a good color tone color unevenness is suppressed by the variation of the particle diameter is small is used fluorescent substance is obtained.

【0053】本発明に用いられる具体的蛍光物質として、Ceで付活されたYAG系蛍光体(Y、Lu、S [0053] As a specific fluorescent substance used in the present invention, activated with YAG phosphor with Ce (Y, Lu, S
c、La、Gd及びSmから選ばれた少なくとも1つの元素と、Al、Ga、及びInからなる群から選ばれた少なくとも1つの元素とを含んでなるセリウムで付活されたガーネット系蛍光体)を挙げる。 c, La, and at least one element selected from Gd, and Sm, Al, Ga, and activated with garnet phosphor cerium comprising at least one element selected from the group consisting of In) the raise. YAG系蛍光体は、Y、Gd、Ceの希土類元素を化学量論比で酸に溶解した溶解液を蓚酸で沈降させる。 YAG-based phosphor, Y, Gd, a solution, which is obtained by dissolving rare earth elements of Ce in an acid in a stoichiometric ratio precipitated with oxalic acid. これを焼成して得られる共沈酸化物と酸化アルミニウムを混合して混合原料を得る。 Obtaining a mixed raw material by mixing coprecipitated oxide and aluminum oxide obtained by firing this. これにフラックスとしてフッ化アンモニウムを混合して坩堝に詰め、空気中1400℃の温度で170 This packed in a crucible a mixture of ammonium fluoride as a flux, 170 at a temperature in air 1400 ° C.
分焼成して焼成品が得られる。 Calcined product is obtained by dividing the firing. 焼成品を水中でボールミルして洗浄、分離、乾燥、最後に篩を通してYAG系蛍光体を形成させることができる。 The fired product washed ball mill in water, separation, drying, and finally it is possible to form a YAG-based phosphor through a sieve.

【0054】同様に、本発明に用いられる他の具体的蛍光体として、Eu及び/又はCrで付活された窒素含有CaO-Al -SiO 蛍光体が挙げられる。 [0054] Similarly, as another specific phosphor used in the present invention, activated nitrogen-containing CaO-Al 2 O 3 -SiO 2 phosphor can be cited by Eu and / or Cr. このEu及び/又はCrで付活された窒素含有CaO-Al The Eu and / or Cr with activated nitrogen-containing CaO-Al
-SiO 蛍光体は、酸化アルミニウム、酸化イットリウム、窒化珪素及び酸化カルシウムなどの原料に希土類原料を所定比に混合した粉末を窒素雰囲気下において1300℃から1900℃(より好ましくは150 2 O 3 -SiO 2 phosphors, aluminum oxide, yttrium oxide, 1900 ° C. The raw material powder obtained by mixing a rare earth material in a predetermined ratio, such as silicon nitride and calcium oxide from 1300 ° C. in a nitrogen atmosphere (more preferably 150
0℃から1750℃)において溶融し成形させる。 Melted is molded at 1750 ° C.) from 0 ° C.. 成形品をボールミルして洗浄、分離、乾燥、最後に篩を通して蛍光体を形成させることができる。 Washing the formed article with a ball mill, separated, dried, and finally it is possible to form a phosphor through a sieve. これにより450 This 450
nmにピークをもった励起スペクトルと約650nmにピークがある青色光により赤色発光が発光可能なEu及び/又はCrで付活されたCa-Al-Si-O-N系オキシナイトライド蛍光硝子とすることができる。 And Ca-Al-Si-O-N-based oxynitride fluorescent glass red light was activated by capable of emitting Eu and / or Cr by blue light nm a peak in the excitation spectrum and about 650nm having a peak at can do.

【0055】なお、Eu及び/又はCrで付活されたC [0055] Incidentally, it was activated by Eu and / or Cr C
a-Al-Si-O-N系オキシナイトライド蛍光硝子の窒素含有量を増減することによって発光スペクトルのピークを575nmから690nmに連続的にシフトすることができる。 It can be continuously shifted to 690nm peak of the emission spectrum from 575nm by increasing or decreasing the nitrogen content of the a-Al-Si-O-N-based oxynitride fluorescent glass. 同様に、励起スペクトルも連続的にシフトさせることができる。 Similarly, the excitation spectra can be continuously shifted. そのため、Mg、Znなどの不純物がドープされたGaNやInGaNを発光層に含む窒化ガリウム系化合物半導体からの光と、約580nmの蛍光体の光の合成光により白色系を発光させることができる。 Therefore, Mg, and light from a gallium nitride based compound semiconductor of GaN or InGaN doped with impurities, such as including the light emitting layer Zn, can emit white by composite light of the light of the phosphor of about 580 nm. 特に、約490nmの光が高輝度に発光可能なI In particular, about 490nm light capable of emitting light with high luminance I
nGaNを発光層に含む窒化ガリウム系化合物半導体からなる発光素子との組合せに理想的に発光を得ることもできる。 nGaN can be obtained ideally emission to the combination of the light-emitting element comprising a gallium nitride-based compound semiconductor containing the light-emitting layer.

【0056】また、上述のCeで付活されたYAG系蛍光体とEu及び/又はCrで付活された窒素含有Ca- [0056] Further, the nitrogen-containing which is activated by the above YAG system fluorescent material activated with Ce and Eu and / or Cr Ca-
Al-Si-O-N系オキシナイトライド蛍光硝子とを組み合わせることにより青色系が発光可能な発光素子を利用してRGB(赤色、緑色、青色)成分を高輝度に含む極めて演色性の高い発光ダイオードを形成させることもできる。 Al-Si-O-N-based blue system by combining the oxynitride fluorescent glass is utilized capable of emitting light emitting device RGB (red, green, blue) very color rendering high luminous containing components with high luminance it is also possible to form a diode. このため、所望の顔料を添加するだけで任意の中間色も極めて簡単に形成させることができる。 Therefore, it is possible also to very easily form any intermediate color by simply adding the desired pigment. 本発明においては何れの蛍光体も無機蛍光体であり、有機の光散乱剤やSiO などを利用して高コントラストと優れた量産性が両立した発光ダイオードを形成させることができる。 Phosphor any in the present invention is also a inorganic phosphor, it is possible to form a light-emitting diode high contrast and excellent mass productivity by using such light scattering agent and SiO 2 of the organic is compatible.

【0057】(透光性モールド部材)このような蛍光物質を透光性モールド部材に含有させる。 [0057] (translucent mold member) is contained such a fluorescent material on the transparent mold member. 透光性モールド部材の材料としては、発光素子及び蛍光物質からの光に対して耐光性が高く、透光性に優れたものが好ましい。 As the material of the translucent mold member, high light resistance to the light from the light emitting element and a fluorescent substance is preferably one excellent in transparency.
また、発光素子を被覆する保護膜として働く場合には、 Furthermore, when acting as a protective film covering the light emitting element,
ある程度の剛性が要求される。 It is required to have a certain degree of rigidity. 透光性モールド部材の材料として、具体的にはエポキシ樹脂、シリコーン樹脂、 As the material of the translucent mold member, specifically an epoxy resin, silicone resin,
ウレタン樹脂、不飽和ポリエステル樹脂、アクリルウレタン樹脂、ポリイミド樹脂等の無溶剤、あるいは溶剤タイプの液状透光性熱硬化樹脂が好適に挙げられる。 Urethane resins, unsaturated polyester resins, acrylic urethane resins, solvent-free, such as polyimide resin or solvent type liquid translucent thermosetting resin, are preferably exemplified. 同様に、アクリル樹脂、ポリカーボネート樹脂、ポリノルボルネン樹脂等の溶剤タイプの液状透光性熱可塑樹脂も利用することができる。 Similarly, it can also be used acrylic resin, a polycarbonate resin, a solvent type liquid translucent thermoplastic resin such as polynorbornene resins. 更に、有機物だけでなく二酸化珪素などの無機物やゾル−ゲル法にて形成した二酸化珪素及びアクリル樹脂などを混合したハイブリッド樹脂も好適に利用することができる。 Further, inorganic or sol such as silicon dioxide as well as organic matter - a hybrid resin including a mixture of silicon dioxide and an acrylic resin were formed by gel method can also be suitably used. また、凸レンズ部材など更に透光性モールド部材を樹脂等にて被覆する場合は、凸レンズ部材等との密着性を考慮して上述で記載した樹脂から選択利用することができる。 Also, if the further translucent mold member such as a convex lens member for covering with a resin or the like, can be in consideration of the adhesion between the lens member and the like for selecting use of a resin as described above.

【0058】本発明において、蛍光物質含有の透光性モールド部材9は、ウエハー状態の素子の上面及び側面に設けられる。 [0058] In the present invention, light-transmitting mold member 9 of a fluorescent material-containing is provided on the upper and side surfaces of the elements of the wafer state. このようにウエハーの状態で行うことで、 By performing in this manner in a state of the wafer,
後に研磨を行い好ましい膜厚に調整することができ、理想的な色調を有する発光装置を形成することができる。 Polishing can be adjusted to a preferred thickness performed after, it is possible to form a light emitting device having an ideal tone.
また、前記蛍光物質含有の透光性モールド部材は、素子の側面まで覆うように設けることにより、素子側面からの光を色変換させて放出することができ色調ムラを抑制することができる。 Also, the fluorescent substance contained in the translucent mold member is provided so that cover up the side surface of the element, it is possible to suppress the color unevenness may emit light from the device side by the color conversion. また、本発明の発光ダイオードは、 The light emitting diode of the present invention,
蛍光物質含有の透光性モールド部材中に、ワイヤー等電気的に接続するのに必要なものが存在しないため、光を遮断するものがなく、光取り出し効率は良好である。 During translucent mold member of a fluorescent material-containing, since there is no necessary to connect the wires or the like electrically, there is nothing to block the light, the light extraction efficiency is good.

【0059】本発明において、発光面となる透光性モールド部材の上面は、発光素子の電極上にバンプの上面と略同一平面である。 [0059] In the present invention, the upper surface of the translucent mold member comprising a light emitting surface, a top substantially flush with the bump on the electrode of the light emitting element. ここで、本明細書において略同一平面とは、前記バンプの側面全体が前記透光性モールド樹脂にて被膜されていればよく広義のものとする。 Here, the substantially flush herein, the entire side surface of the bump and that of the well-broad if it is coated with the light-transmitting mold resin. このようにバンプの側面を露出させることなく前記透光性モールド部材にて被覆することにより、前記バンプと前記透光性モールド部材との界面から水分が吸収されてしまうのを防止することができ好ましい。 By coating in this manner in side the translucent mold member without exposing the bumps, can be water from the interface between the said bump translucent mold member is prevented from being absorbed preferable. また、前記モールド部材の上面の形状は特に限定されるものではなく、曲線を帯びていてもよいし凹凸を有していてもよく、このような構成の場合レンズ効果が得られ良好な指向特性が得られる。 Further, the shape of the upper surface of the mold member is not particularly limited, and may also carry a curved may have an uneven, good directivity is obtained when the lens effect of such structure It is obtained.

【0060】このようにして得られた発光装置は、バンプ8の上面及び蛍光物質含有の透光性モールド部材9とからなる発光装置の上面と発光装置の基板側底面とが略平行であると様々な実装が可能となり好ましい。 [0060] Such light emitting device thus obtained is, and the substrate-side bottom surface of the upper surface and the light-emitting device of the light-emitting device comprising a light-transmitting mold member 9 Metropolitan top and phosphor content of the bump 8 is substantially parallel the preferred it is possible to various implementations. 更に前記発光装置が略直方体であると、容易に複数の発光装置を密に実装することができ好ましい。 Further, the the light emitting device is substantially rectangular, preferably can be easily densely mounting a plurality of light emitting devices. 特に、同一面側に両電極を有する発光素子を用いる場合、前記各電極上にそれぞれバンプを設け、各正負の電極の導電接続部分が素子底面側から互いに等しい高さとすることで、リード電極等の外部電極と発光装置とをワイヤーにて導電をとる際に、各ワイヤーのループ形状及び進入角を等しくすることができる。 In particular, when using a light-emitting element having both electrodes on the same side, the respectively provided on each electrode bump, by conductive connection portion of each positive and negative electrodes are mutually equal height from the element the bottom side, the lead electrode or the like the the external electrode and the light emitting device when taking conducting a wire, it is possible to equalize the loop shape and the approach angle of each of the wires. これによりワイヤーの強度が向上され、外力等によるワイヤー切れを防止することができる。 Thus the strength of the wire is improved, it is possible to prevent the wire breakage caused by an external force or the like.

【0061】更に、図5に示すように、前記蛍光物質含有の透光性モールド部材を、発光素子の各電極上に設けられたバンプの上面を開口部として前記発光素子の周囲を覆うように四方八方に設けても良い。 [0061] Further, as shown in FIG. 5, the fluorescent light-transmitting mold member material containing, as the upper surface of the bump formed on the respective electrodes of the light emitting element as an opening to cover the periphery of the light emitting element it may be provided in all directions. このように構成すると発光素子から発光される光を全て良好に変換することができ、均一に発光することが可能な発光装置が得られる。 All the light emitted from the light emitting element and this configuration can be satisfactorily converted, which is capable of uniformly emitting light-emitting device is obtained. 特に基板側底面にも蛍光物質含有の透光性モールド部材を設けるとフリップ実装が可能となり出力向上を図ることができる。 In particular, when providing the light-transmitting mold member also fluorescent substance contained in the substrate side bottom can improve the output enables flip mounting. 一方、前記発光装置の基板側を実装基板に対向させダイボンド樹脂にて固定する場合、前記ダイボンド樹脂中に前記蛍光物質を含有させることで発光素子の基板底面側から発光される光を良好に変換し外部に取り出すことができる。 On the other hand, when fixing by die bonding resin are opposed to the substrate side of the light emitting device on the mounting substrate, light emitted from the bottom surface of the substrate side of the light emitting device by the inclusion of the fluorescent substance in the die bonding resin satisfactorily converted and it can be extracted to the outside.

【0062】(反射膜)本発明に用いられる反射膜11 [0062] reflection is used to (reflection film) The present invention film 11
は、基板側から発光される光が外部に放出されるのを抑制し光取り出し効率を向上させ、より良好な発光を得るためのものである。 Is to prevent the light emitted from the substrate side is emitted to the outside to improve the light extraction efficiency is to obtain a better luminous. 好ましい反射膜の材料として、多層膜で形成された酸化膜や種々の金属等が挙げられる。 Preferred as the material of the reflective film, oxide film and various metal or the like formed in the multilayer film. 特に形成のしやすさの観点から金属膜を用いることが好ましい。 It is preferable to use a metal film in terms of particular formation of ease. 金属膜として、具体的には反射率の高いAg、A As the metal film, high reflectivity specifically Ag, A
l及びそれらの合金等が挙げられる。 l and their alloys. これらの金属膜はスパッタリング法や真空蒸着法等によって形成することができる。 These metal films may be formed by a sputtering method or a vacuum evaporation method, or the like. 本発明において反射膜は、少なくとも基板の底面を覆うように形成されていればよく、好ましくはチップの側面及び底面を覆うように連続して形成される。 Reflective film in the present invention may be formed so as to cover the bottom surface of at least the substrate is preferably formed continuously so as to cover the side and bottom surfaces of the chip.

【0063】 [0063]

【実施例】以下、本発明に係る実施例の発光ダイオードについて説明する。 BRIEF DESCRIPTION light emitting diode of the embodiment according to the present invention. なお、本発明は以下に示す実施例のみに限定されるものではない。 The present invention is not limited to the examples shown below.

【0064】[実施例1]サファイア(C面)よりなる絶縁性基板1上に各半導体層2,3及び青色(470n [0064] [Example 1] sapphire respective semiconductor layers 2, 3, and blue on the insulating substrate 1 made of (C plane) (470n
m)が発光可能な発光層(図示していない)をMOVP m) is capable of emitting light-emitting layer (not shown) MOVP
E法により形成する。 It is formed by E method. アニーリング後、ウエハーを反応容器から取り出し、最上層のp型窒化物半導体層の表面に所定のSiO 等からなる絶縁膜を成膜した後、前記絶縁膜表面上に所定の形状のレジスト膜を形成し、RI After annealing, the wafer is taken out from the reaction vessel, after forming an insulating film on the surface of the uppermost p-type nitride semiconductor layer formed of a predetermined SiO 2 or the like, a resist film having a predetermined shape on the insulating film on the surface formed, RI
E(反応性イオンエッチング)装置でp型窒化物半導体層側からエッチングを行い、負電極を形成するn型窒化物半導体層の表面を露出させる。 Etched from the p-type nitride semiconductor layer side E (reactive ion etching) apparatus to expose the surface of the n-type nitride semiconductor layer to form a negative electrode. 次に、前記絶縁膜を酸により剥離した後、最上層にあるp型窒化物半導体層上のほぼ全面にNi/Auからなる第1正電極4を、47 Then, the after removing the insulating film of the acid, the first positive electrode 4 made of substantially the entire surface Ni / Au on the p-type nitride semiconductor layer in the top layer, 47
0nmの波長の光透過率が40%で且つ表面抵抗率が2 Light transmittance at a wavelength of 0nm is and the surface resistivity at 40% 2
Ω/□となるように、膜厚200オングストロームで形成する。 As the Omega / □, it is formed to a thickness of 200 angstroms. 次に、前記第1正電極上に、リフトオフ法によりAuからなる第2正電極5を膜厚0.7μmで形成する。 Then, on the first positive electrode, forming a second positive electrode 5 made of Au by a lift-off method in a thickness of 0.7 [mu] m. 一方、エッチングにより露出させたn型窒化物半導体層の表面には、同じくリフトオフ法によりW/Al/ On the other hand, on the surface of the n-type nitride semiconductor layer exposed by etching, likewise by a lift-off method W / Al /
W/Auからなる負電極6を膜厚0.8μmで形成し、 The negative electrode 6 made of W / Au was formed to a thickness of 0.8 [mu] m,
LED素子とする。 An LED element.

【0065】次に、パターニングにより、各電極のボンディング部のみを露出させ素子全体を覆うようにSiO Next, by patterning, SiO so as to cover the entire element to expose the bonding portion only of each electrode
よりなる絶縁性保護膜7を470nmの波長において光透過率が90%となるように膜厚2μmで形成する。 The insulating protective film 7 made of two light transmission at 470nm wavelength is formed to a thickness of 2μm to be 90%.

【0066】以上のようして形成された窒化物半導体ウエハーにおいて、図3−(a)のように、ダイシングにより半導体層側面に蛍光物質含有の透光性モールド部材を設けるための凹部を形成する。 [0066] In the nitride semiconductor wafer which is formed by the above, as shown in FIG. 3- (a), to form a recess for providing the light-transmitting mold member phosphor contained in the semiconductor layer side by dicing . このようにダイシングすることにより発光素子の発光層の側面に蛍光物質含有の透光性モールド部材を配置することができ色ムラを抑制することができ好ましい。 It can be preferable to thus suppress the side fluorescent substance can be color unevenness placing a translucent mold member containing the light-emitting layer of a light-emitting element by dicing. またウエハーをスクライブする際、該ウエハーにかかる圧力を低減させることができ基板の反りや劈開を抑制することができる。 Also when scribing wafers, it is possible to suppress warpage or cleavage of the substrate can be reduced pressure on the wafer. ダイシング後、各電極の各ボンディング面上にバンプボンバーにてバンプ8の材料であるAuを高さ50μmで圧着させる。 After dicing, on each bonding surface of each electrode at bump bomber to crimp the Au which is the material of the bumps 8 at a height 50 [mu] m. (第1の工程)。 (First step).

【0067】一方、蛍光物質として(Y 0.8 Gd [0067] On the other hand, as a fluorescent substance (Y 0.8 Gd
0.2 Al 12 :Ceを80重量部、エポキシ樹脂100重量部と酸無水物、硬化促進剤及び拡散剤としてSiO を65℃で十分に攪拌させ、蛍光物質含有の透光性モールド部材9となる材料を形成する。 0.2) 3 Al 5 O 12: 80 parts by weight of Ce, epoxy resin 100 parts by weight of an acid anhydride, an SiO 2 sufficiently allowed to stir at 65 ° C. as a curing accelerator and diffusing agent, light-transmitting fluorescent substance containing forming a material comprising a sexual mold member 9. このときのエポキシ樹脂の粘度は700cpである。 The viscosity of the epoxy resin at this time is 700 cP. このように形成された蛍光物質含有の透光性モールド部材となる材料を、ディップにより前記バンプを覆うように膜厚1 The thus formed material which becomes translucent mold member of a fluorescent substance-containing, film thickness 1 as the dip covering the bump
50μmで被覆させる(第2の工程)。 It is coated with 50 [mu] m (the second step). これを85℃1 This 85 ℃ 1
80分の一次硬化、140℃240分の二次硬化によって硬化させる。 80 minutes in the primary curing, cured by secondary hardening of 140 ° C. 240 minutes.

【0068】次に、発光素子の発光面から該透光性モールド部材上面が40μmとなるように、各バンプ8及び蛍光物質含有の透光性モールド部材9を半導体層側から共に研磨してバンプ8の表面を露出させる(第3の工程)。 Next, as the light transmissive sealing member top surface from the light emitting surface of the light emitting element is 40 [mu] m, and grinding together the bumps 8 and the fluorescent substance translucent mold member 9 containing semiconductor layer side bumps exposing the 8 surface (third step). また、基板を厚さが120μmとなるように基板側から研削・研磨する。 Further, the grinding and polishing from the substrate side so that the thickness of the substrate becomes 120 [mu] m.

【0069】最後に、窒化物半導体ウエハーの切断される位置の透光性モールド部材をダイシングにより除去した後、スクライバーによりスクライブラインを引き外力によって300μm角のチップ状に切断する(第4の工程)。 [0069] Finally, after removing by dicing translucent mold member position to be cut of a nitride semiconductor wafer is cut into chips of 300μm square by an external force pulling the scribe line by a scriber (fourth step) .

【0070】以上のようにして形成された発光ダイオードを用いて白色LEDランプを形成すると、歩留まりは95%である。 To form a white LED lamp using the [0070] above manner emitting diodes formed, the yield is 95%. このように、本発明である発光ダイオードを使用することで、量産性良く発光装置を生産でき、 Thus, by using a light emitting diode which is the present invention, it can produce high productivity emitting device,
信頼性が高く且つ色調ムラの少ない発光装置を提供することができる。 It is possible to provide a small light emitting device high and tone unevenness reliability.

【0071】(比較例1)これに対して、絶縁膜を設けた後に窒化物半導体層半導体ウエハーをチップ状に切断し、個々の発光素子をマウントリードのカップ内底面に配置し、ワイヤーにより電気的に接続した後に、まず蛍光物質含有透光性モールド部材を発光素子を覆うようにカップ内に充填させ、その後透光性の凸レンズ部材を設ける以外は実施例1と同様にして発光ダイオードを形成すると、歩留まりは85%である。 [0071] (Comparative Example 1) In contrast, the nitride semiconductor layer semiconductor wafer after providing the insulating film was cut into chips, to place individual light emitting element cup bottom of the mount lead, electricity by wires after connecting, first be filled into the cup as a fluorescent material-containing translucent mold member covering the light emitting element, forming a light-emitting diode in the same manner except that subsequently providing a translucent convex lens member as in example 1 Then, the yield is 85%. また、実施例1の発光ダイオードと比較すると色調にムラが見られる。 Further, unevenness is observed in the color tone when compared to the light emitting diode of Example 1.

【0072】(実施例2)第4の工程後、個々の発光ダイオードにシート・エキスパンド10を用いてスパッタ法によりサファイア基板側に反射膜11を形成する第5 [0072] (Example 2) After the fourth step, fifth forming the reflective film 11 on the sapphire substrate side by sputtering using a sheet-expanded 10 into individual light emitting diodes
の工程を行う以外は実施例1と同様にして発光ダイオードを形成すると、実施例1と同様の効果が得られる。 When except for performing the steps of forming a light-emitting diode in the same manner as in Example 1, the same effect as in the first embodiment can be obtained. また、端面の光を良好に発光面に取り出すことができ高出力の発光ダイオードが得られる。 Moreover, the high output of the light emitting diode obtained can be extracted satisfactorily emitting surface light of the end face.

【0073】(実施例3)第4の工程後、個々の発光ダイオードに、基板側から基板の周囲に蛍光物質含有の透光性モールド部材を形成する以外は実施例1と同様にして発光ダイオードを形成すると、発光素子上に設けられたバンプの露出面以外の全て外周に前記蛍光物質含有の透光性モールド部材を有する発光装置が得られ、実施例1と同様の効果が得られる他、発光素子の四方八方から発光される光を良好に色変換することができるため、色ムラが抑制され更に均一な発光が得られる。 [0073] (Example 3) fourth after the step, the individual light-emitting diode, except for forming the light-transmitting mold member of a fluorescent material-containing around the substrate from the substrate side in the same manner as in Example 1 to the light emitting diode When forming the light-emitting device is obtained having the fluorescent substance contained in the translucent mold member on all outer periphery except the exposed surface of the bump formed on the light emitting element, in addition to obtained the same effects as in example 1, since the light emitted from all directions of the light emitting element can be satisfactorily color conversion, further uniform light emission color unevenness is suppressed is obtained.

【0074】一方、蛍光物質として(Y 0.8 Gd [0074] On the other hand, as a fluorescent substance (Y 0.8 Gd
0.2 Al 12 :Ceを80重量部、シラノール(Si(OEt)3OH)100重量部、更に前記シラノールの2倍の重量でエタノールを混合してスラリーを形成し、該スラリーをノズルからウエハーに吐出させて蛍光物質含有の透光性モールド部材の材料と塗布した後、300℃にて3時間加熱してシラノールをSiO2 0.2) 3 Al 5 O 12: 80 parts by weight of Ce, silanol (Si (OEt) 3OH) 100 parts by weight, and further forming a double slurry by mixing ethanol by weight of the silanol, the slurry after application the material of the translucent mold member of a fluorescent material-containing by ejecting the wafer from the nozzle, and heated 3 hours at 300 ° C. silanol SiO2
とし、蛍光物質をウエハー上に固着させる以外は実施例1と同様にして発光装置を形成すると、実施例1と同様の効果が得られる。 And then, the other to fix the fluorescent substance on the wafer to form a light emitting device in the same manner as in Example 1, the same effect as in the first embodiment can be obtained.

【0075】 [0075]

【発明の効果】詳細に説明したように、本発明に係る発光装置は、ウエハーをチップ状に切断する前に、各電極上にバンプを形成して導電部分を嵩上げし、蛍光物質含有透光性モールド部材を半導体層側に設けることで、信頼性が高く且つ光学特性に優れた色変換型発光装置を効率よく生産することができる。 [Effect of the Invention] As has been described in detail, the light emitting device according to the present invention, prior to cutting the wafer into chips, and raising the conductive portion to form a bump on each electrode, a fluorescent material-containing translucent sex mold member by providing the semiconductor layer side, can be efficiently produced a color conversion type light emitting device reliability excellent high and optical properties.

【0076】また、本発明の発光装置は、バンプ露出面を開口部として発光素子の周囲全面に蛍光物質含有の透光性モールド部材を有するため、発光素子からの光を蛍光物質にて効率よく変換させることができ、所望とする色調を均一に発光することができる。 [0076] The light-emitting device of the present invention has a light-transmitting mold member of a fluorescent material-containing around the entire surface of the light emitting element bumps exposed surface as an opening, efficiently light from the light emitting element with a fluorescent material can be converted, it is possible to uniformly emit color to the desired. このため、発光素子からの光による外部の劣化を抑制することができる。 Therefore, it is possible to suppress the external deterioration caused by light from the light emitting element.

【0077】また、基板側に連続した絶縁性反射膜を設けることにより、光取り出し効率が良好で発光ムラの少ない発光装置とすることができる。 [0077] Further, by providing a continuous insulating reflective film on the substrate side, the light extraction efficiency can be less light emitting device good uneven light emission.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】 本発明に係る実施の形態の発光ダイオードの模式的断面図である。 1 is a schematic cross-sectional view of a light emitting diode of the embodiment according to the present invention.

【図2】 本発明に係る実施の形態の他の態様の発光ダイオードの模式的平面図である。 2 is a schematic plan view of a light emitting diode of another aspect of an embodiment according to the present invention.

【図3】 本発明に係る実施の形態の発光ダイオードの形成方法である。 Figure 3 is a forming method of the light emitting diode of the embodiment according to the present invention.

【図4】 本発明に係る実施の形態の他の発光ダイオードの形成方法の一工程である。 4 is a process step of another method for forming the light emitting diode of the embodiment according to the present invention.

【図5】 本発明に係る実施の形態の他の発光ダイオードの模式的断面図である。 5 is a schematic cross-sectional view of another light emitting diode of the embodiment according to the present invention.

【符号の説明】 DESCRIPTION OF SYMBOLS

1・・・基板 2・・・n型窒化物半導体層 3・・・p型窒化物半導体層 4・・・第1正電極 5・・・第2正電極 6・・・負電極 7・・・絶縁膜 8・・・バンプ 9・・・蛍光物質含有の透光性モールド部材 10・・・シート・エキスパンド 11・・・反射膜 1 ... substrate 2 ... n-type nitride semiconductor layer 3, ... p-type nitride semiconductor layer 4 ... first positive electrode 5 ... second positive electrode 6 ... negative electrode 7 .. insulating film 8 ... bumps 9 ... fluorescent substance containing translucent mold member 10 ... seat expand 11 ... reflecting film

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Claims (8)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 基板上に半導体層を有する発光素子と、 A light emitting device having a semiconductor layer 1. A substrate,
    該発光素子からの光の一部を吸収してそれよりも長波長の光が発光可能な蛍光物質と、該蛍光物質を有し前記発光素子の表面を包囲する透光性モールド部材とを有する発光装置であって、 前記発光素子の電極上に少なくとも1つのバンプを有し、該バンプの上面は前記透光性モールド部材の上面と略同一平面である発光装置。 It has a part to absorb than can emit light of a long wavelength fluorescent material of the light from the light emitting element and a light-transmitting mold member surrounding the surface of the light emitting device having a fluorescent material a light-emitting device has at least one bump on the electrode of the light emitting element, the light emitting device upper surface of the bump is a top substantially flush with the light-transmitting mold member.
  2. 【請求項2】 前記バンプの膜厚は5μm〜150μm Wherein the thickness of said bump 5μm~150μm
    である請求項1に記載の発光装置。 The light emitting device according to claim 1 is.
  3. 【請求項3】 前記バンプの上面及び前記透光性モールド部材の上面からなる発光装置の上面は、基板側底面に平行である請求項1乃至2に記載の発光装置。 The upper surface of 3. A light emitting consisting top surfaces and the light-transmitting mold member of the bump device, light emitting device according to claim 1 or 2 which is parallel to the substrate side bottom.
  4. 【請求項4】 前記蛍光物質は、Ceで付活されたイットリウム・アルミニウム・ガーネット系蛍光物質、Eu Wherein said fluorescent substance, yttrium were activated by Ce-aluminum-garnet fluorescent material, Eu
    及び/又はCrで付活された窒素含有CaO−Al And / or nitrogen-containing been activated with Cr CaO-Al 2 O
    −SiO 蛍光物質から選択される1種である請求項1乃至3に記載の発光装置。 3 light-emitting device according to claim 1 to 3 is one selected from -SiO 2 fluorescent substance.
  5. 【請求項5】 前記発光素子の少なくとも基板側に、連続した反射膜を有する請求項1乃至4に記載の発光装置。 At least the substrate side of wherein said light emitting element, a light-emitting device according to claim 1 to 4 having a continuous reflective film.
  6. 【請求項6】 基板上に半導体層を有する発光素子と、 A light emitting device having a semiconductor layer 6. A substrate,
    該発光素子からの光の一部を吸収してそれよりも長波長の光が発光可能な蛍光物質と、該蛍光物質を有し前記発光素子の表面を包囲する透光性モールド部材とを有する発光装置の形成方法であって、 ウエハーの状態で前記発光素子の電極上にバンプを形成する第1の工程と、前記発光素子の半導体層側に前記バンプを覆うように前記透光性モールド部材となる材料を被覆させる第2の工程と、研磨により半導体層側から前記ウエハー底面と平行にバンプの上面を露出させる第3 It has a part to absorb than can emit light of a long wavelength fluorescent material of the light from the light emitting element and a light-transmitting mold member surrounding the surface of the light emitting device having a fluorescent material a method of forming a light emitting device, a first step and the light-transmitting mold member so as to cover the bumps on the semiconductor layer side of the light-emitting element for forming bumps on electrodes of the light emitting element in a state of the wafer a second step of coating a become material, a third for exposing the top surface of the bump in parallel to the wafer bottom surface from the semiconductor layer side by the polishing
    の工程と、前記ウエハーをダイシング且つスクライブすることにより切断する第4の工程とを有する発光装置の形成方法。 Steps and, the method of forming the light emitting device and a fourth step of cutting by dicing and scribing the wafer.
  7. 【請求項7】 前記第4の工程後、前記発光素子の少なくとも基板側に連続した透光性モールド部材を形成する請求項6に記載の発光装置の形成方法。 7. After the fourth step, the method of forming the light-emitting device according to claim 6 to form a continuous translucent mold member at least on the substrate side of the light emitting element.
  8. 【請求項8】 前記第4の工程後、前記発光素子の少なくとも基板側に連続した反射膜を形成する請求項6に記載の発光装置の形成方法。 After wherein said fourth step, the method of forming the light-emitting device according to claim 6 for forming a reflective film which is continuous in at least the substrate side of the light emitting element.
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