CN102479686B - Method of processing a substrate - Google Patents

Method of processing a substrate Download PDF

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Publication number
CN102479686B
CN102479686B CN201110389676.0A CN201110389676A CN102479686B CN 102479686 B CN102479686 B CN 102479686B CN 201110389676 A CN201110389676 A CN 201110389676A CN 102479686 B CN102479686 B CN 102479686B
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CN
China
Prior art keywords
groove
impression materials
substrate
moulage device
die
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Expired - Fee Related
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CN201110389676.0A
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Chinese (zh)
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CN102479686A (en
Inventor
J.奥尔特纳
M.索尔格
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Infineon Technologies AG
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Infineon Technologies AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D19/00—Casting in, on, or around objects which form part of the product
    • B22D19/0072—Casting in, on, or around objects which form part of the product for making objects with integrated channels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02371—Disposition of the redistribution layers connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
    • H01L2224/0346—Plating
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/0347—Manufacturing methods using a lift-off mask
    • H01L2224/03472—Profile of the lift-off mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H01L2224/06182—On opposite sides of the body with specially adapted redistribution layers [RDL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06183—On contiguous sides of the body
    • H01L2224/06187—On contiguous sides of the body with specially adapted redistribution layers [RDL]
    • H01L2224/06188—On contiguous sides of the body with specially adapted redistribution layers [RDL] being disposed in a single wiring level, i.e. planar layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09036—Recesses or grooves in insulating substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01—Tools for processing; Objects used during processing
    • H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/0108—Male die used for patterning, punching or transferring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
    • H05K2203/308—Sacrificial means, e.g. for temporarily filling a space for making a via or a cavity or for making rigid-flexible PCBs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/887—Nanoimprint lithography, i.e. nanostamp

Abstract

In a method of processing a substrate in accordance with an embodiment, a trench may be formed in the substrate, imprint material may be deposited at least into the trench, the imprint material in the trench may be embossed using a stamp device, and the stamp device may be removed from the trench.

Description

The method for the treatment of substrate
Technical field
Embodiment relates generally to the method for the treatment of substrate.
Embodiment
Detailed description is below with reference to accompanying drawing, and accompanying drawing is illustrated and can be put into practice specific detail of the present invention and embodiment by the mode illustrating.These embodiment are described fully so that those skilled in the art can put into practice the present invention.Can utilize other embodiment and can under the condition that does not depart from scope of the present invention, make structure, logic and electricity and change.Each embodiment there is no need mutually exclusive, because some embodiment can combine to form new embodiment with one or more other embodiment.
When this uses, term " layer " or " layer structure " can be understood as the sequence of layer (stacking also referred to as layer) that represents individual layer or comprise a plurality of sublayers.Sequence of layer or layer stacking in, each sublayer for example can comprise different materials or can be made by different materials, or at least one in sublayer can comprise with another identical material in sublayer or can by with sublayer in another identical material make.
When this uses, term " ... upper setting ", " ... upper layout " or " ... upper formation " can be understood as expression can be at the upper layer (or some other elements or entities) of placing in the mode of direct mechanical and/or electricity contact of another layer (element or entity).Can also, with another layer (element or entity) with (machinery and/or electricity) way of contact placement indirectly, in this case, can there are one or more extra plays (element or entity) therebetween in layer (element or entity).
When this uses, term " ... on arrange ", " ... on arrange " or " ... on form " can be understood as expression and can at least indirectly be placed on the layer (or some other elements or entities) on another layer (element or entity).That is, one or more other layers (element or entity) can be positioned between given layer (element or entity).
Term " electricity connection ", " electricity contact " or " electricity coupling " can be understood as and comprise that direct electricity connection, contact or coupling and indirect electricity connect, contact or coupling.
Fig. 1 is that explanation is according to the diagram of the method 100 of the treatment substrate of an embodiment.
According to an embodiment, substrate can be semiconductor substrate, in other words, is to comprise one or more semi-conducting materials or the substrate that can be made by one or more semi-conducting materials.For example, substrate can comprise silicon (Si) or can be made by silicon (Si), alternatively any other suitable semi-conducting materials, for example, for example, for example, such as germanium (Ge), IV-IV compound semiconductor (SiGe), III-V compound semiconductor (GaAs), II-VI compound semiconductor (CdTe) or other suitable semi-conducting materials arbitrarily.
According to an embodiment, substrate can be that wafer maybe can comprise that wafer can be maybe a part for wafer, for example semiconductor wafer (such as for example silicon wafer), alternatively any other suitable semiconductor wafers.
According to another embodiment, substrate can be that printed circuit board (PCB) (PCB) maybe can comprise printed circuit board (PCB) (PCB).
In 102, can in substrate, form groove.
According to an embodiment, form groove and can comprise etch process.In other words, can use etch process (for example standard trench etch process) to form groove.According to another embodiment, form groove and can comprise cutting technique.In other words, can use cutting technique to form groove.According to other embodiment, can realize by means of other suitable techniques the formation of groove.
According to an embodiment, can deposited barrier layer.Can in groove, deposit impression (imprint) material deposited barrier layer (seeing below) before.According to an embodiment, can be on the sidewall of groove or a plurality of sidewall deposited barrier layer.Can carry out deposited barrier layer by the deposition method of any appropriate.
According to an embodiment, can deposit Seed Layer.Can deposit impression materials in groove before, deposit Seed Layer (seeing below).According to an embodiment, can on the sidewall of groove or a plurality of sidewall, deposit Seed Layer.According to an embodiment, can at least a portion of barrier layer (if providing), deposit Seed Layer.Can deposit Seed Layer by the deposition method of any appropriate.
In 104, at least can in groove, deposit impression materials.
When this uses; term " impression materials " can be understood as and comprises and can or impress composition or structurized material by means of protruding seal (emboss); for example; can use die (stamp) device (for example, die or imprint master or Kun) composition or the structurized material for example, with stamping structure or pattern (micro-embossing structure or nano impression structure).
According to an embodiment, impression materials can be deposited as and make groove be stamped material partly to fill.According to another embodiment, impression materials can be deposited as and make groove be stamped material fully to fill.
According to an embodiment, impression materials can comprise hardened material can being maybe can hardened material.
When this uses, term " can hardened material " can be understood as that comprise can be from second state (also referred to as hardening state) with higher hardness or resistivity changes or the material of conversion to comparing with the first state compared with the first state of soft or resistivity (also referred to as non-hardening state).From the transformation of the first (non-sclerosis) state to the second (sclerosis) state, be also referred to as " sclerosis " or " malleableize ".
According to some embodiment, supposing that impression materials comprises can hardened material or can hardened material, and impression materials can deposit during in non-hardening state at it.
According to an embodiment, can can comprise that polymerization or polymerizable material can be maybe polymerization or polymerizable material by hardened material, for example, according to the polymerization anticorrosive additive material of an embodiment, such as according to the photosensitive resist material of an embodiment, such as according to the UV(ultraviolet of an embodiment) responsive photoresist, or according to the temperature-sensitive anticorrosive additive material of another embodiment.
Suppose polymerization or polymerizable material (polymerization anticorrosive additive material for example, for example, photoresist) as can hardened material, sclerosis can be illustratively the crosslinked realization of for example, polymer chain by polymerization or polymerizable material (polymerization anticorrosive additive material, such as photoresist).In this contact, sclerosis polymerization or polymerizable material also can be called curing and can also can be called curable materials by hardened material.
According to some embodiment, can can be arranged so that the crosslinked of polymer chain can be by means of irradiation or radiation (in the situation of photosensitive resist material) realization by hardened material, for example by means of UV, (for example irradiate, situation at the responsive anticorrosive additive material of UV) realize, in other words, for example, by material being exposed to light (UV light), realize, and for example can cause the deliquescent variation of polymerization or polymerizable material (for example polymerization anticorrosive additive material, such as photoresist).
According to another embodiment, can be arranged so that the crosslinked temperature (for example, tempering or annealing process) that can promote by means of application of polymer chain realizes by hardened material.What for example, can harden by means of the temperature promoting can comprise thermosets by hardened material.
According to another embodiment, can hardened material can be arranged so that sclerosis that can hardened material or solidify (for example crosslinked) by realizing to can hardened material applying voltage.
According to another embodiment, can can be configured to self-hardening material by hardened material, in other words, being configured to not to need external action (for example, the temperature or the voltage that without application, irradiate, promote) condition under (for example, just measure sometime expired after) material of sclerosis.
According to another embodiment, impression materials can comprise that mold compound can be maybe mold compound.
According to another embodiment, impression materials can comprise that nanometre glue material can be maybe nanometre glue material.
Can deposit impression materials with the deposition process of any appropriate.For example, according to some embodiment, suppose that impression materials comprises impression resist or impression resist, can deposit impression materials with the resist deposition process of any appropriate, for example, according to the spin coating method of an embodiment.According to other embodiment, can use other suitable deposition processs.
According to some embodiment, deposition impression materials can also be included at least a portion of substrate surface and deposit impression materials, for example, according to an embodiment, at least on the part near groove or the substrate surface adjacent with groove or a plurality of part, deposit impression materials.Impression materials for example can covered substrate surface.
According to an embodiment, deposition impression materials can comprise that the layer (for example thick-layer) of use impression materials (for example impressing resist) carrys out coated substrate (for example wafer).
In 106, can carry out protruding seal impression materials with Moulage device.
When this uses, term " die (stamp) device " can be understood as and comprises and can to impression materials, carry out composition or structurized device, for example die thus for protruding seal or impression impression materials.According to some embodiment, Moulage device for example can comprise that die can be maybe die.In this case, die is also referred to as imprint master.According to other embodiment, Moulage device for example can comprise that structurized Kun can be maybe structurized Kun.
Supposing that impression materials comprises can hardened material or can hardened material, impression materials can its during in non-hardening state by protruding seal.
According to some embodiment, imprinting apparatus (for example die) can comprise at least one imprinted pattern or the structure that can be suitable for printing at groove convexity structure.For example, according to an embodiment, Moulage device (for example die) can comprise one or more micro-embossing structures.When this uses, " micro-embossing structure " can be understood as and comprises stamping structure or pattern term, its one or more Spatial Dimensions (for example, length, width, highly) for example, in micrometer range (, the magnitude in several microns, tens microns or hundreds of micron).In other words, " micro-embossing structure " can represent to have the length of micrometer range and/or the stamping structure of width and/or height.
According to some embodiment, Moulage device (for example die) can comprise can be corresponding to the imprinted pattern (also referred to as stamping structure) of the reverse side (inverse) (or back (negative)) of the mask structure that at least will form in groove or mask pattern (being also referred to as three-dimensional (3D) mask structure or pattern).According to some embodiment, imprinted pattern can be corresponding to will be in groove and the reverse side (or back) of the 3D mask structure forming at least a portion of substrate surface.3D mask structure can be corresponding to can for example, by printing the impression materials through composition that Moulage device (die) (having imprinted pattern) obtains in impression materials epirelief.
According to some embodiment, Moulage device (for example die) can be arranged so that imprinted pattern can arrive in groove at least in part when protruding seal impression materials.According to an embodiment, groove and/or Moulage device (for example die) can be arranged so that when protruding seal impression materials, the lower end of Moulage device (for example die) (illustratively, in the face of that end of the Moulage device (for example die) of the bottom of groove) can separate with the bottom space of groove.In other words, according to an embodiment, the degree of depth of groove can be so that when protruding seal impression materials, and the lower end of Moulage device (for example die) (or imprinted pattern of Moulage device) does not arrive or the bottom of contact trench.For example, for example, thereby when Moulage device (die) is placed in groove, impression materials layer for example can be retained between the lower end of channel bottom and Moulage device (die).Therefore, in this case, the whole bottom that the mask structure can the moulage by protruding seal forming can covering groove.According to other embodiment, Moulage device (for example die) (or more accurately, the imprinted pattern of Moulage device (for example die)) can be arranged so that the lower end of Moulage device (for example die) can arrive channel bottom.In this case, channel bottom can not have impression materials after protruding seal at least partly.Therefore, in this case, the mask structure that can form by protruding seal impression materials can cover part channel bottom.
According to some embodiment, the imprinted pattern of Moulage device (for example die) can have and allows to remove Moulage device (for example die) and not damage the mask structure that can be formed by the impression materials of protruding seal (and may harden) or the arbitrary shape of mask pattern from groove, illustratively, (or more accurately, its stamping structure or the pattern) arbitrary shape that do not stumbled or block in the impression materials of protruding seal (and may harden) that for example allows protruding seal impression materials, so that Moulage device (die).
Illustratively, according to some embodiment, use Moulage device (for example die) in groove and may be on substrate surface protruding seal impression materials can comprise impression materials is carried out to composition to have corresponding to will be in groove and the pattern of the 3D mask structure that may form on substrate surface.In other words, can for example, by print the Moulage device (die) have corresponding to the imprinted pattern of the reverse side (or back) of 3D mask structure in impression materials epirelief, obtain 3D structure.
According to some embodiment, 3D mask structure can be for example, for follow-up composition technique (, pattern electroplating technology) to obtain three-dimensional (3D) pattern or structure, all three-dimensional (3D) metallization structure or pattern as will be described hereinafter.
According to some embodiment, Moulage device (for example die) can comprise than the harder material of impression materials or can be made by the material harder than impression materials.In other words, according to an embodiment, the material of printing equipment or multiple material can have the mechanical hardness higher than impression materials.
According to an embodiment, Moulage device (for example die) (for example can comprise metal or metal alloy, according to an embodiment, be similar to the die using in audio compression CD (CD) is produced) or can be by metal or metal alloy (for example, according to an embodiment, be similar to the die using in audio compression CD (CD) is produced) make.According to an embodiment, Moulage device (for example die) can comprise steel or be formed from steel.
According to an embodiment, Moulage device (for example die) can comprise flexible material or be made by flexible material.For example, Moulage device (for example die) can comprise polymeric material or can be made by polymeric material, for example, according to the organosilicon of an embodiment (silicone) material, and alternatively another polymeric material.Can find out, use the possible generation of the cut in the impression materials that an effect such as the flexible material of for example polymeric material is can Avoids or reduces to cause due to the reason of protruding seal (impression).
According to an embodiment, for example, suppose that impression materials is can be by means of the light-sensitive material of irradiation sclerosis, Moulage device (for example die) can comprise transparent material or can be made by transparent material.According to an embodiment, for example, suppose to use responsive (or curable) material of UV as impression materials, transparent material can be for example transparent to ultraviolet (UV) irradiation.For example, according to some embodiment, Moulage device (for example die) can comprise glass material or can be made by glass material, for example, according to the silica glass material of an embodiment.
According to an embodiment, can use and make same or similar technique with standard nano impression (for example make or manufacture) Moulage device (for example die) is provided.Alternatively, can use other suitable techniques that Moulage device (for example die) is provided.
According to some embodiment, suppose that impression materials is also deposited on substrate surface, use the protruding seal impression materials of Moulage device (for example die) to comprise and use the protruding seal of Moulage device (for example die) to be deposited on the impression materials on substrate surface.Illustratively, according to an embodiment, Moulage device (for example die) can have the imprinted pattern that can be suitable for protruding seal structure in groove and on substrate surface.
According to some embodiment, suppose that impression materials is can hardened material, impression materials can be after protruding seal impression materials and from groove, is being removed Moulage device (for example die) harden before (seeing below).
For example, suppose to use for example, for example, curable materials such as for example curable polymerization or polymerizable material (polymerization anticorrosive additive material, photoresist), the impression materials that hardens can comprise solidified imprinting material.As mentioned above, illustratively, solidified imprinting material can comprise polymer chain crosslinked of impression materials.
According to an embodiment, solidified imprinting material (photosensitive resist material) can comprise impression materials is exposed to irradiation, for example, and for example, according to the ultraviolet of an embodiment (UV) irradiation the situation of the curable resist of UV ().
According to another embodiment, solidified imprinting material (for example, temperature-sensitive anticorrosive additive material) can comprise tempering substrate (and impression materials thus).
According to another embodiment, solidified imprinting material can comprise the radiation of impression materials applied microwave.For example, according to an embodiment, impression materials can comprise host material, and this host material can be thermo-sensitive material, thermally sensitive polymeric material for example, and it can comprise the Nano-Ferrite Particle that can be embedded in host material.Nano-Ferrite Particle can absorb energy from the electromagnetic field of microwave.This can cause the heating of Nano-Ferrite Particle in host material.By this way, come the heat of the Nano-Ferrite Particle of self-embedding can be in host material directly and partly to discharge and host material (for example polymeric material) can be by the hot curing discharging.
In 108, can remove Moulage device (for example die) from groove.
Illustratively, according to some embodiment, three-dimensional (3D) mask structure can be retained in groove, and according to some embodiment, for example, at removal Moulage device (die), is retained in afterwards at least a portion of substrate surface.3D mask structure can for example, corresponding to the impression materials (impressing resist) through composition or structuring (and possible sclerosis or curing).
According to an embodiment, can for example, at removal Moulage device (die), carry out afterwards flash of light (flash) and/or depression (recess) step.Flash of light and/or depression step for example can for example, for removing for example possible impression materials residue of the side-walls of groove (, thin polymer film, such as resist film).
According to an embodiment, can for example, at removal Moulage device (die), in groove, deposit afterwards packing material.According to an embodiment, can deposit afterwards packing material in flash of light and/or depression step (if providing).
According to another embodiment, deposition packing material can comprise that filling does not at least have the part groove of impression materials.Illustratively, packing material can (at least in part) be filled those trench portions that Moulage device (for example die) takies.
Illustratively, according to some embodiment, for example, deposition packing material can be included in groove and fill " non-impression materials region ", supposes that anticorrosive additive material, as impression materials, is for example non-resist region.
According to some embodiment, packing material can comprise that electrical conductivity material can be maybe electrical conductivity material, such as for example metal.According to an embodiment, packing material can comprise that metal can be maybe metal, such as for example copper (Cu), and alternatively any other suitable metal or metal alloy.
According to an embodiment, deposition packing material (for example metal) can comprise that stream electricity (galvanic) deposition of packing material maybe can realize by stream electricity (galvanic) deposition of packing material.
According to an embodiment, deposition packing material (for example metal) can comprise that electroplating technology maybe can realize by electroplating technology.In other words, can use electroplating technology (for example Cu electroplates) deposition packing material (for example metal).
Illustratively, according to some embodiment, can pass through packing material (for example metal) and form 3D pattern or structure (3D plated pattern or structure).3D pattern or structure can be illustratively corresponding to the imprinted pattern of die.
According to an embodiment, can in substrate, form at least one additional trenches, can in this at least one additional trenches, deposit impression materials, can use the protruding seal impression materials of Moulage device (for example die), and can remove Moulage device (for example die) from this at least one additional trenches.
According to another embodiment, at least one additional trenches convexity, printing impression materials can implement after groove convexity prints impression materials.Illustratively, according to this embodiment, substrate can be with " distribute and repeat " sequential processes, and wherein Moulage device (for example die) can print impression materials by convex row in a plurality of grooves.
According to another embodiment, at least one additional trenches convexity, print impression materials and print impression materials at groove convexity and can implement simultaneously.Illustratively, according to this embodiment, substrate can be processed in " integrated " mode, and wherein Moulage device (for example die) can print impression materials at all groove convexities the while (in other words, once).In this case, Moulage device (for example die) can configure in suitable mode, for example, make it comprise a plurality of imprinted pattern (for example, imprinted pattern of each groove).According to an embodiment, imprinted pattern can all be of similar shape, and alternatively, they can have different shapes.Moreover according to an embodiment, if the sclerosis of impression materials is provided, the impression materials in all grooves can be hardened simultaneously.
Fig. 2 is that explanation is according to the diagram of the method 200 of the treatment substrate of another embodiment.
According to an embodiment, substrate can be semiconductor substrate, in other words, is to comprise one or more semi-conducting materials or the substrate that can be made by one or more semi-conducting materials.For example, substrate can comprise silicon (Si) or can be made by silicon (Si), alternatively any other suitable semi-conducting materials, for example, for example, for example, such as germanium (Ge), IV-IV compound semiconductor (SiGe), III-V compound semiconductor (GaAs), II-VI compound semiconductor (CdTe) or other suitable semi-conducting materials arbitrarily.
According to an embodiment, substrate can be that wafer maybe can comprise that wafer can be maybe a part for wafer, semiconductor wafer for example, and such as for example silicon wafer, other suitable semiconductor wafers arbitrarily alternatively.
According to another embodiment, substrate can be that printed circuit board (PCB) (PCB) maybe can comprise printed circuit board (PCB) (PCB).
In 202, can in substrate, form groove.According to one or more embodiment described herein, for example, groove forms and/or configuration by means of trench process or by means of cutting technique, alternatively uses other suitable grooves formation techniques arbitrarily to form and/or configuration.
According to an embodiment, can deposited barrier layer.Deposited barrier layer (seeing below) before die can be set in groove.Moreover, can be according to one or more embodiment depositions described herein and/or configuration barrier layer.
According to an embodiment, can deposit Seed Layer.Moulage device (for example die) can be set in groove and deposit before Seed Layer (seeing below).Moreover, can configure Seed Layer according to one or more embodiment described herein.
In 204, Moulage device (for example die) can at least be arranged in groove.Can configure Moulage device (for example die) according to one or more embodiment described herein.For example, according to one or more embodiment described herein, Moulage device can be configured to comprise the imprint master of imprinted pattern.
In 206, at least a portion (the one or more parts of groove that for example there is no the imprinted pattern of Moulage device (for example die)) that there is no a groove of Moulage device (for example die) is filling groove packing material at least in part.In other words, one or more " non-die " region in groove (that is the region of groove that, for example, there is no the imprinted pattern of Moulage device when Moulage device (die) is arranged in groove) filling groove packing material illustratively.
According to some embodiment, trench fill material can comprise it can hardened material can being maybe can hardened material, for example, according in embodiment described herein any one can hardened material, polymerizable material for example, such as for example curable polymer resin, such as photoresist.
According to some embodiment, trench fill material can be deposited as also filling groove packing material of for example, part (" non-die region " on substrate surface) on make the there is no Moulage device substrate surface of (die).For example, according to some embodiment, trench fill material can be deposited as and make the part or the region that are positioned on for example, substrate surface between substrate surface and the top of Moulage device (die) can filling groove packing material.
According to an embodiment, supposing that trench fill material comprises can hardened material or can hardened material, and trench fill material can deposit during in non-hardening state at it.
According to another embodiment, supposing that trench fill material comprises can hardened material or can hardened material, and trench fill material can be after filling groove and removed Moulage device (for example die) harden before (seeing below) from groove.The sclerosis of trench fill material can realize according to one or more embodiment described herein.
In 208, can remove Moulage device (for example die) from groove.
Illustratively, according to some embodiment, 3D mask structure can be retained in groove, and according to some embodiment, for example, when removing Moulage device (die) from groove, is retained at least a portion of substrate surface.Illustratively, 3D mask structure can for example, corresponding to for example, trench fill material (anticorrosive additive material) through composition or structuring (, possible sclerosis or curing).
According to an embodiment, can for example, at removal Moulage device (die), carry out afterwards flash of light and/or depression step.Flash of light and/or depression step for example can for example, for removing for example possible trench fill material residue of the side-walls of groove (, thin polymer film, such as resist film).
According to an embodiment, can for example, at removal Moulage device (die), in groove, deposit afterwards packing material.According to an embodiment, can deposit afterwards packing material in flash of light and/or depression step (if providing).Can realize deposition packing material according to one or more embodiment described herein.Moreover, can configure packing material according to one or more embodiment described herein.For example, according to an embodiment, packing material can comprise that electrical conductivity material can be maybe electrical conductivity material, for example, can be used to form the metal (for example copper) of one or more metallization structures.
According to another embodiment, can in substrate, form at least one additional trenches, Moulage device (for example die) can be set in this at least one additional trenches, can use trench fill material to fill the part that there is no Moulage device (for example die) of this at least one additional trenches, and can remove Moulage device (for example die) from this at least one additional trenches.
According to an embodiment, the part that Moulage device (for example die) is set at least one additional trenches and uses trench fill material to fill this at least one additional trenches for example, is implemented after Moulage device (die) can being set in groove and using trench fill material filling part groove.Illustratively, according to this embodiment, substrate can be with " distribute and repeat " sequential processes, and wherein Moulage device (for example die) can be arranged in a plurality of grooves continuously.
According to another embodiment, Moulage device (for example die) is set at least one additional trenches and Moulage device (for example die) is set in groove and can implement simultaneously.Moreover according to an embodiment, the part and the filling part groove that use trench fill material to fill at least one additional trenches can be implemented simultaneously.Illustratively, according to this embodiment, substrate can be processed in " integrated " mode, and wherein for example Moulage device (for example die) can be arranged in all grooves and/or can use trench fill material filling groove simultaneously the while (in other words, once).In this contact, Moulage device (for example die) can configure in suitable mode, for example in one embodiment, has a plurality of imprinted pattern described in conjunction with Figure 1.Moreover according to an embodiment, if the sclerosis of trench fill material is provided, the trench fill material in all grooves can be hardened simultaneously.
For example, according to the treatment substrate of an embodiment (, semiconductor substrate, such as wafer, as silicon wafer) method in, can in substrate, form groove (for example,, by means of groove etching process), can on substrate, deposit impression materials, use at least in part thus impression materials filling groove, the impression materials in groove can be by means of having the protruding seal of imprint master that arrives at least in part the imprinted pattern in groove, and can remove imprint master from groove.According to an embodiment, impression materials can be impression resist, and polymer resist for example, such as photoresist.According to an embodiment, imprinted pattern can be corresponding to the reverse side of the three-dimensional masking film structure that will form by impression materials, and the impression materials of protruding seal can have can be corresponding to the pattern of three-dimensional masking film structure.According to an embodiment, impression materials can comprise can hardened material (for example, curable polymer material, such as for example polymer resist, as photoresist) can be maybe can hardened material (for example, curable polymer material, such as for example polymer resist, as photoresist) and can after protruding seal and before removing die, harden (such as, for example by means of irradiation, for example UV irradiation, solidify).According to an embodiment, packing material can be deposited on substrate after removing die, fills thus the trench portions that at least there is no impression materials.According to an embodiment, packing material can comprise that electrical conductivity material can be maybe electrical conductivity material, for example metal (for example copper).
For example, according to the treatment substrate of another embodiment (, semiconductor substrate, such as wafer, as silicon wafer) method in, can in substrate, form groove (for example,, by means of groove etching process), the imprint master with imprinted pattern can be set on substrate, imprinted pattern is arrived in groove at least in part, there is no the trench portions filling groove packing material at least in part of the imprinted pattern of imprint master, and can on substrate, remove imprint master.According to an embodiment, imprinted pattern can be corresponding to the reverse side of the three-dimensional masking film structure that will form by raceway groove packing material, and after using trench fill material filling part groove, trench fill material can have can be corresponding to the pattern of three-dimensional masking film structure.According to an embodiment, trench fill material can comprise can hardened material (for example, curable polymer material, such as for example polymer resist, as photoresist) can be maybe can hardened material (for example, curable polymer material, such as for example polymer resist, as photoresist) and can after using trench fill material filling part groove and before removal imprint master, harden (such as, for example by means of irradiation, for example UV irradiation, solidify).According to an embodiment, packing material can be deposited on substrate after removing imprint master, fills thus the trench portions that at least there is no trench fill material.According to an embodiment, packing material can comprise that electrical conductivity material can be maybe electrical conductivity material, for example, such as for example metal (copper).
Fig. 3 illustrates can be by means of exemplary three dimensional (3D) the structure 300(obtaining according to the method for the treatment substrate of an embodiment also referred to as object construction) perspective view.
Structure 300 comprises substrate 301.According to an embodiment, substrate 301 can be semiconductor substrate, for example silicon (Si) substrate.For example, according to an embodiment, substrate 301 can be a part for silicon wafer.
As shown in the figure, in substrate 301, form groove 302.According to an embodiment, groove 302 for example can be by means of etch process or by means of cutting technique, alternatively by means of other suitable grooves formation techniques formation arbitrarily.
The degree of depth of groove 302 (illustratively, channel bottom 314 is to the distance between upper substrate surface 301a) is indicated by the double-head arrow 302a in Fig. 3.According to some embodiment, gash depth 302a can be less than for example wafer of substrate 301() thickness.According to some embodiment, gash depth 302a can be in micrometer range.For example, gash depth 302a can have one or the value of several microns or tens microns or hundreds of micron.For example, according to some embodiment, gash depth 302a can, in approximately 100 μ m to the scope of approximately 300 μ m, be for example 300 μ m according to an embodiment.According to other embodiment, gash depth 302a can have different value.
The width of groove 302 (distance of the opposing sidewalls 312 of groove 302 illustratively) is indicated by the double-head arrow 302b in Fig. 3.According to some embodiment, groove width 302b can be in micrometer range.For example, according to some embodiment, groove width 302b can, in approximately 10 μ m to the scope of approximately 200 μ m, be for example approximately 50 μ m according to an embodiment.According to other embodiment, groove width 302b can have different value.
According to other embodiment, can realize the three-dimensional structure for example, with other geometries (other trench geometry) with the similar fashion of structure 300 as shown in Figure 3.These structures can have similar or different sizes, for example, and similar or different groove dimensions, for example similar or different raceway groove gash depth and/or channel widths.
Object construction 300 is also included in groove 302 and at part substrate 301(more accurately, on the part upper surface 301a of substrate 301) on three-dimensional (3D) mask structure 303 that forms.
Mask structure 303 can comprise impression materials or can be made by impression materials, and described impression materials for example, such as for example impressing resist (, polymerization resist).According to some embodiment, can for example, by deposit the protruding seal impression materials of stamp equipment (, die or imprint master) that impression materials and use have corresponding to the imprinted pattern of the reverse side of mask structure 303 in groove 302, obtain mask structure 303.
Alternatively, can for example, for example, for example, by the part that deposits Moulage device (die or imprint master) and use trench fill material (such as polymerization resist can hardened material) to fill the groove 302 that at least there is no Moulage device (die or imprint master) in groove 302 and on the upper surface 301a of substrate 301, obtain mask structure 303.
As shown in the figure, mask structure 303 can comprise the 303' of first that can be arranged in groove 302 and bottom 314 that can covering groove 302.As shown in the figure, the width of the 303' of first of mask structure 303 can be identical with the width 302b of groove 302.In other words, the 303' of first can adjoin the sidewall 312 of groove 302.
According to some embodiment, the thickness of the 303' of first of mask structure 303 can, in micrometer range, for example, be about several microns or tens microns according to an embodiment.According to other embodiment, thickness can have different value.
In Fig. 3, the upper surface 313 of the 303' of first of double-head arrow 303a indication mask structure 303 and the distance between the upper surface 301a of substrate 301.Illustratively, apart from 303a can corresponding to gash depth 302a deduct mask structure 303 the 303' of first thickness and can be in micrometer range, for example, about tens or hundreds of micron.For example, according to an exemplary embodiment, apart from 303a, can be about 250 μ m.According to other embodiment, apart from 303a, can there is different value.
According to shown in embodiment, mask structure 303 can also comprise second portion 303 "; second portion 303 " can be arranged in groove 302 and can have the width less than the width 302b of groove 302 (the double-head arrow 303b indication of Fig. 3), make part groove 302 there is no the material of mask structure 303.Illustratively, according to the embodiment shown in Fig. 3, (second portion 303 ") can be bar shaped or ridged to the mid portion of mask structure 303.According to shown in embodiment, the second portion 303 of mask structure 303 " a part can be outstanding from groove 302.
According to shown in embodiment, mask structure 303 also comprise can cover part substrate 301(more accurately, the part upper surface 301a of substrate 301) third part 303 " '.
The 303' of first of the mask structure 301 of the bottom 314 of covering groove 302 can be for preventing that packing material is (as described below, for example, electrical conductivity material such as for example, can be filled into the metal in groove 302 after forming mask structure 303) bottom 314 of arrival groove 302.According to another embodiment, the 303' of first can not exist maybe can have width (for example,, with the second portion 303 of mask structure 303 " the have identical width) (not shown) that is less than groove.Thereby according to this embodiment, at least part of bottom 314 of groove 302 can not have the material of mask structure 303.In this case, after forming mask structure 303, can be filled into the bottom 314 that packing material in groove 302 (for example electrical conductivity material, such as metal) can arrive groove 302.
Illustratively, Fig. 3 illustrates exemplary three dimensional (target) structure 300 that comprises three-dimensional (3D) mask structure 303.In order to obtain object construction 300, not only need to be on substrate surface 301a and also need to be in groove 302 structuring form the material (for example resist) of mask structure 303.According to some embodiment; as hereinafter further described; can for example, by means of (deposit impression materials in groove 302 and on substrate surface 301a; impression resist) and use and to have for example, corresponding to Moulage device (, die or imprint master) the protruding seal impression materials implementation structure of three-dimensional (3D) imprinted pattern of the reverse side of 3D mask structure 303 or through the mask structure 303 of composition.According to other embodiment; can for example, for example, by means of Moulage device (imprint master) being set in groove 302 and on substrate surface 301a and using subsequently the trench fill material (can hardened material; such as for example resist) fill and there is no the groove 302 of Moulage device (for example, die or imprint master) and the part implementation structure on substrate surface 301a or through the mask structure 303 of composition.
Note, use conventional method, the 3D object construction that forms all structures as shown in Figure 3 300 may be at all impossible or may relatively costly (for example, a lot of processing steps of needs).For example, because required resist thickness can not correspondingly expose (for example,, due to the not enough depth of focus of exposure tool, the generation of the stray light at edge, unsteadiness of (a plurality of) resist wall causing due to the loss of the solvent during baking process etc.), standard photoetching may be lost efficacy.On the other hand, because can not arrive the structure in deep trench, two-photon photoetching may be lost efficacy.Finally, may not use standard nano-imprint process, because they are only designed for print structure on smooth surface.
Fig. 4 illustrates the perspective schematic view of the Moulage device 400 that can use in the method for the treatment of substrate.According to illustrated embodiment, Moulage device 400 is configured to die.Moulage device 400 or die 400 can be for obtaining the objective structure 300 of Fig. 3.
Die 400 can be configured to imprint master and can comprise or can for example, by the material that is suitable for the material (impressing resist) of protruding seal mask structure 303, be made.According to an embodiment, for example, supposing to be configured to by the impression materials of die 400 protruding seals can for example, by means of what irradiate (UV irradiates) sclerosis can hardened material, and die 400 can be made by transparent material, for example, by UV transparent material, made.According to other embodiment, die 400 can comprise other materials or can be made by other materials, flexible material for example, and for example, for example, according to an embodiment polymeric material (organosilicon material), or metal or metal alloy.
According to shown in embodiment, die 400 can comprise can be corresponding to the plane top 401 of substrate mask.Moreover die 400 can comprise illustratively the imprinted pattern 402 corresponding to the reverse side (or back) of the 3D mask structure 303 shown in Fig. 3.
According to illustrated embodiment, imprinted pattern 402 comprises two L shaped part 402' and 402 "; these two L shaped part 402' and 402 ", and mirror image arranges symmetrically and can be by using die 400 protruding seal impression materials in groove 302 and on substrate surface 301a with the 3D mask structure 303 of Fig. 3, or do not have the groove 302 of imprinted pattern 402 and the mode of the part on substrate surface 301a to configure by using trench fill material to fill.
Note, according to other embodiment, the imprinted pattern of Moulage device (for example die or Kun) can have and is different from the shape shown in Fig. 4.For example, imprinted pattern may not need to have two L shaped parts shown in Fig. 4.Usually, the shape of the imprinted pattern of Moulage device (for example die or Kun) can depend on three-dimensional masking film structure or the object construction that will use Moulage device to form.For example, according to some embodiment, do not have arbitrary shape or the pattern of undercutting (in other words, not thering is any undercutting) can be suitable for imprinted pattern.
According to illustrated embodiment, two L shaped part 402' of imprinted pattern 402 and 402 " in each comprise that vertical component 422(extends in the direction of the first type surface perpendicular to substrate mask), it has corresponding to the extension of the distance 303a shown in Fig. 3 (double-head arrow 403a indication).For example, for example, when die 400 is when printing impression materials (seeing Fig. 5 D) or be arranged on groove 302 (seeing Fig. 9 C) before die 400 is depositing trench fill material at groove 302 convexities, vertical component 422 can arrive in groove 302.Moreover the width 303b(of two L shaped part 402', 402 " between distance 403b corresponding to the second portion 303 of 3D mask structure 303 " is for example shown in Fig. 5 D and Fig. 9 D).Moreover, two L shaped part 402', 402 of imprinted pattern 402 " respective outer wall 415 between distance 402b corresponding to the width 320b(of groove 302, for example see Fig. 5 D and 9C).In other words, the value apart from 402b can be identical or basic identical with the value of groove width 302b.
Two L shaped part 402', 402 of imprinted pattern 402 " can also be called as micro-embossing structure (μ stamping structure).Die 400 also can be called as micro-embossing mask (μ imprint mask).
According to some embodiment, as below described in conjunction with Fig. 5 A to 5E, can obtain the 3D mask structure 303 shown in Fig. 3 by using the die 400 shown in Fig. 4 to print impression materials at groove 302 convexities.According to other embodiment, as below described in conjunction with Fig. 9 A to 9E, can obtain the 3D mask 303 shown in Fig. 3 by the part that the die 400 of Fig. 4 is set in groove 302 and use trench fill material to fill the groove 302 that there is no die 400.As below described in conjunction with Fig. 5 F and Fig. 5 G, 3D mask structure 303 for example can be used to form one or more 3D metallization structures subsequently.As below described in conjunction with Fig. 6 to 8, metallization structure for example can contact for electricity one or more electricity or electronic component or the device of one or more tube cores or chip.
Hereinafter, in connection with Fig. 5 A to 5E, describe according to the method for the treatment substrate of an embodiment, Fig. 5 A to 5E illustrates the different process stage with schematic cross section.
Fig. 5 A is illustrated in the first view 510 that forms groove 302 in substrate 301.Substrate 301 comprises upper surface 301a and can also be configured to for example semiconductor substrate according to one or more embodiment described herein, and for example, wafer, as silicon wafer.
According to one or more embodiment described herein, for example, use standard trench etch process to form groove 302.Groove 302 comprises sidewall 312 and bottom 314.The degree of depth of groove 302 is indicated by double-head arrow 302a and for example can be had the value according to one or more embodiment described herein.Moreover the width of groove 302 is indicated by double-head arrow 302b and for example can be had the value according to one or more embodiment described herein.
According to an embodiment, barrier layer can be deposited on (not shown) on the sidewall 312 of groove 302 at least.According to another embodiment, Seed Layer can be deposited on (not shown) on barrier layer.According to another embodiment, barrier layer and/or Seed Layer can be omitted.
Fig. 5 B illustrates for example, with the thick-layer coated substrates 301(of impression materials (impressing resist) 521 wafer for example) the second view 520.As shown in the figure, impression materials 521 can filling groove 302 and at least part of upper surface 301a of covered substrate 301.Described in being so in below, impression materials 521 can be by impression composition or structuring.According to some embodiment, impression materials can be can hardened material, and curable polymeric material for example, such as polymerization resist, as can for example, by means of irradiating (UV irradiates) curing photoresist.
Fig. 5 C illustrates by the three-view diagram 530 at impression materials 521 epirelief Yin Yinmo 400 impression impression materials 521.In Fig. 5 C, protruding seal is indicated by arrow 531.Die 400 can be identical with the die with describe in conjunction with Fig. 4 above herein mode configure.Especially, identical reference number can be indicated and element identical in Fig. 4.By means of at impression materials 521 epirelief Yin Yinmo 400, impression materials 521(for example impresses resist) can be patterned to form the three-dimensional masking film structure 303 shown in the 4th view 540 in Fig. 5 D.Three-dimensional masking film structure 303 can have and the similar shape shown in Fig. 3.Especially, identical reference number can be indicated and element identical in Fig. 3.
According to some embodiment, can after impression, harden three-dimensional masking film structure 303(more accurately, the impression materials 521 of three-dimensional masking film structure 303).According to some embodiment, can for example, by means of irradiation (UV irradiates), realize sclerosis.In this case, die 400 can for example, for example be made, so that light (, UV radiation) process by optical transparency (UV is transparent) material, and impression materials 521 can be for example, material by means of irradiation (UV irradiates) sclerosis, for example, photosensitive (for example UV is photosensitive) polymer resist.
Fig. 5 E illustrates the 5th view 550 of removing die 400 from groove 302.As shown in the figure, comprise the 303' of first and second portion 303 " three-dimensional masking film structure 303 be retained in groove 302.Note, three-dimensional masking film structure 303 can also comprise the third part 303 of part upper surface 301a that can covered substrate 301 " '; but this does not shown in Figure 3ly illustrate in Fig. 5 E, because the 5th view 550 is clearly corresponding to the section of the hatching A-A' along in Fig. 3.
Illustratively, according to some embodiment, three-dimensional (3D) die 400 can protrudingly print to and be coated with impression materials 521(and for example impress resist) substrate 301 on.According to some embodiment, impression materials 521 can harden after protruding seal and before removing die 400.For example, according to impression materials 521, are embodiment for photosensitive resist material, resist can be exposed to light to be cross-linked the polymer chain in anticorrosive additive material.In this case, die 400 can be configured to transparent die so that for the light process of the resist that exposes.According to other embodiment, such as temperature or voltage that crosslinked (or deliquescent variation) of the resist of polymer can also promote by application are realized.
According to an embodiment, such as the cleaning of the step of for example glistening/cave in the sidewall 312 removal impression materials 512(from for example groove 302 for example can after removing die 400, carry out thin polymer film (for example resist film)) possible residue.
According to some embodiment, as shown in the six views 560 in Fig. 5 F, three-dimensional (3D) mask structure 303(is 3D polymer mask for example) can be for the follow-up metallization process such as pattern electroplating technology, wherein non-impression materials region (clearly, there is no those parts on the groove 302 of impression materials 521 and the upper surface 301a of substrate 301) (that is the non-resist region while, supposing that impression materials 521 is anticorrosive additive material) can be with metal 561(copper (Cu) for example) flow electricly and fill.
According to shown in embodiment, metal 561 extends in groove 302, until the upper surface 313 of the 303' of first of mask structure 303, until corresponding to the degree of depth 503a of the distance 303a shown in Fig. 5 F.Thereby, according to shown in embodiment, metal 561 is separated with channel bottom 314 spaces by means of the 303' of first of the mask structure 303 of covering groove bottom 314.According to other embodiment, mask structure 303 can be arranged so that metal 561 arrives channel bottom 314.
After using metal 561 filling non-impression materials regions, 3D mask structure 303 (for example can be removed, use for example, for the material (resist) of selective removal mask structure 303 metal 561 to be retained in the suitable technique on groove 303 and substrate surface 301a), as shown in the 7th view 570 in Fig. 5 G.As shown in Figure 6, metal 561 for example can form or in substrate 301, form with electricity contact as one or more metal structures in substrate 301 one or more electricity and/or electronic installation.
Fig. 6 illustrates the schematic cross sectional view 600 of substrate 301, for illustrating to use according to the method for the treatment substrate of an embodiment, forms metallization structure.Substrate 301 can be that wafer can be maybe the part of wafer.In substrate 301, form groove 302, and form the first metallization structure 610a and the second metallization structure 610b in groove 302 and on the upper surface 301a of substrate 301.The same way to describe in conjunction with Fig. 5 A to 5G above for example, can be by means of forming groove 302 and the first and second metallization structure 610a, 610b according to the method for the treatment substrate of one or more embodiment described herein.The first metallization structure 610a is positioned at least one first electronic installation 602a of substrate 301 for electricity contact.The second metallization structure 610b is positioned at least one second electronic device 602b of substrate 301 for electricity contact.
As shown in the figure, this at least one first electronic installation 602a can be arranged in substrate 301 first area 603(its can be corresponding to first tube core that will be formed by substrate 301), and this at least one second electronic device 602b can be arranged in substrate 301 second area 604(its can be corresponding to second tube core that will be formed by substrate 301).As shown in the figure, the first area 603 of substrate 301 and second area 604 can be disposed adjacent one another and can be engaged by the 3rd region 605 of the substrate 301 between the first area 603 at substrate 301 and second area 604 and between the bottom 314 of groove 302 and the lower surface 301b of substrate 310.According to an embodiment, can use tube core singulation technique to obtain the first tube core and the second tube core.In other words, first area 603 and the second area 604 of substrate 301 (for example, by means of die separation technique) separated from one another, remove thus the first area 603 of substrate 301 and the 3rd region 605(between second area 604 and link part).
Except the groove 302 shown in Fig. 6 and the first and second metallization structure 610a, 601b, can in substrate 301, form additional trenches (not shown) and can in additional trenches and on the upper surface 310a of substrate 301, form additional metal structure (not shown) in the mode similar to groove 302 and the first and second metallization structure 610a, 610b.Additional metal structure can contact the first electronic installation 602a and/or second electronic device 602b and/or for example be arranged in the additional electronics of the additional areas (its can corresponding to the additional dies that will be formed by substrate 301) of substrate 301 for electricity.Additional dies for example can be used tube core singulation technique to obtain, and wherein the additional areas of substrate can (in other words, tube core be by singulation) separated from one another.
Thereby, illustratively, according to some embodiment, as shown in Figure 7, can provide and comprise a plurality of tube cores (or chip) and the die arrangement or the die array that for electricity, contact a plurality of die metal structures of tube core.
Fig. 7 illustrates the schematic top view of die array 750, for illustrating to use according to the method for the treatment substrate of an embodiment, forms die metal structure.Die array 750 comprises that a plurality of tube cores (chip) 700(of arranging with row 720,740,760 and row 725,745,765,785 in this example, 12 tube cores 700 are arranged with rectangular array, comprise the first row 720, the second row 740 and the third line 760 and first row 725, secondary series 745, the 3rd row 765 and the 4th row 785; Usually, can arrange with the row and column of arbitrary number the tube core 700 of arbitrary number).Can be by means of tube core singulation from public substrate 301(wafer for example) obtain tube core 700.Each tube core 700 comprises a plurality of die metal structure 710a, 710b, 710c, 710d.In the example shown, for each tube core 700 provides the first die metal structure 710a, the second die metal structure 710b, the 3rd die metal structure 710c and the 4th die metal structure 710d.As shown in the figure, each tube core 700 can have comprise 4 side surface 700a, 700b, 700c, 700d rectangle (for example, square) shape, and as shown in the figure, die metal structure 710a, 710b, 710c, 710d can be arranged in 4 side surface 700a, 700b, 700c, the 700d of tube core 700.Especially, as shown in the figure, the first die metal structure 710a and the second die metal structure 710b are positioned at the first and second side surface 700a, the 700b of tube core 700 respect to one another, and the 3rd die metal structure 710c and the 4th die metal tubular construction 710d are positioned at the third and fourth side surface 700c, the 700d of tube core 700 respect to one another.According to other embodiment, each tube core can provide the die metal structure of different numbers and deployment tube core metal structure differently.Die metal structure 710a, 710b, 710c, 710d can contact for electricity the one or more electronic installations of respective dies 700.
The similar manner to describe in conjunction with Fig. 5 A to 5G above for example, can be by means of form die metal structure 710a, 710b, 710c, 710d according to the method for the treatment substrate of one or more embodiment described herein.
Illustratively, the second die metal structure 710b of the most adjacent tube core 700 in can using the first die metal structure 710a that the public three-dimensional masking film structure forming forms given tube core 700 and go together mutually in the groove between two adjacent tube cores.For example, can use the second die metal structure 720b that is arranged in two adjacent tube core 700', 700 " between the public three-dimensional masking film structure that forms of groove form the first die metal structure 710a of being positioned at the second row 740 and the first tube core 700' of a plurality of tube cores 700 of the intersection point of secondary series 745 and be positioned at second tube core 700 of the second row 740 with a plurality of tube cores 700 of the intersection point of first row 725 ".
Similarly, can use the public three-dimensional masking film structure forming in the groove between two adjacent tube cores to form the 4th die metal structure 710d of tube core 700 the most adjacent in the 3rd die metal structure 710c of given tube core 700 and same column.For example, can use the 4th die metal structure 710d that is arranged in two adjacent tube core 700', 700 " between the public three-dimensional masking film structure that forms of groove form the 3rd tube core 700 that is positioned at the 3rd die metal structure 710c of the second row 740 and the first tube core 700' of the intersection point of secondary series 745 and is positioned at the first row 720 and the intersection point of secondary series 745 " '.
Illustratively, the die array shown in Fig. 7 750 can be arranged so that each tube core (chip) 700 of a plurality of tube cores 700 comprises 4 contacts (for example pin).
Fig. 8 illustrates the perspective schematic view 800 of tube core, for illustrating to use according to the method for the treatment substrate of another embodiment, forms die metal structure.
Tube core 800 comprises three die metal structure 810a, 810b, the 810c that is configured to surface and sidewall contact.In other words, can on the upper surface of tube core 800 and sidewall, form die metal structure 810a, 810b, 810c.For example, in the mode similar to above-mentioned combination Fig. 5 A to 5G, can form die metal structure 810a, 810b, 810c by for example, passing through afterwards stream electro-deposition according to the method structuring three-dimensional masking film of the treatment substrate of one or more embodiment (resist mask) in use.
Illustratively, Fig. 8 illustrates another example that can use the target product (tube core for example, with die metal) obtaining according to the method for the treatment substrate of an embodiment.
Hereinafter, in conjunction with Fig. 9 A to 9E, describe according to the method for the treatment substrate of another embodiment, Fig. 9 A to 9E illustrates the different process stage with schematic cross section.
Fig. 9 A is illustrated in the first view 910 that forms groove 302 in substrate 301.Substrate 301 comprises upper surface 301a and can also be configured to for example semiconductor substrate according to one or more embodiment described herein, and for example, wafer, such as silicon wafer.
According to one or more embodiment described herein, for example, can use standard trench etch process to form groove 302.Groove 302 comprises sidewall 312 and bottom 314.The degree of depth of groove 302 is indicated by double-head arrow 302a and for example can be had the value according to one or more embodiment described herein.Moreover the width of groove 302 is indicated by double-head arrow 302b and for example can be had the value according to one or more embodiment described herein.
According to an embodiment, barrier layer can be deposited on (not shown) on the sidewall 312 of groove 302 at least.According to another embodiment, Seed Layer can be deposited on (not shown) on barrier layer.According to another embodiment, barrier layer and/or Seed Layer can be omitted.
Fig. 9 B and 9C illustrate the die 400 that comprises three-dimensional imprinted pattern 402 and are arranged in groove 302 and are arranged on the second view 920 and three-view diagram 930 at least part of upper surface 301a of substrate 301.Fig. 9 B is illustrated in the die 400 before placement in groove 302, and the placement of the die in groove 302 400 is indicated by arrow 931.Fig. 9 C is illustrated in the die 302 after placement in groove 302.Die 400 can be to configure with the similar mode that Fig. 5 C describes in conjunction with Fig. 4 above.The element that has a same reference numerals with Fig. 4 or Fig. 5 C is identical and for for purpose of brevity with reference to description above.
Fig. 9 D illustrates and uses trench fill material 921 to fill the 4th view 940 of the part of the groove 302 that there is no die 400.According to some embodiment, trench fill material 921 can be can hardened material (for example, polymerization anticorrosive additive material) and for example can be according to one or more embodiment configurations described herein.For example, according to some embodiment, trench fill material 921 can comprise that polymerization resist can be maybe polymerization resist, for example according to an embodiment can for example, by be exposed to the curing photosensitive polymerization resist of light (being UV radiation) in the situation of the responsive resist of UV, or according to the thermally sensitized polymerization resist of the temperature-curable that can promote by application of another embodiment, or according to another embodiment can be by applying the curing resist of voltage.
According to some embodiment, the part upper surface 301a(of trench fill material 921 all right covered substrates is not shown in Fig. 9 D).Illustratively, trench fill material 921 can form three-dimensional (3D) mask structure 303 that can have with the analogous shape that illustrates and describe in conjunction with Fig. 3.The element that has a same reference numerals with Fig. 3 is identical and for for purpose of brevity with reference to description above.
According to some embodiment, can after deposition trench fill material 921, harden three-dimensional masking film structure 303(more accurately, the trench fill material 921 of three-dimensional masking film structure 303).According to some embodiment, can for example, by means of irradiation (UV irradiates), realize sclerosis.In this case, die 400 can by optical transparency (for example UV is transparent) material make so that light (for example, UV radiation) process, and trench fill material 921 can be for example, material by means of irradiation (UV irradiates) sclerosis, such as for example, photosensitive (for example UV is responsive) polymerization resist.
Fig. 9 E illustrates the 5th view 950 of removing die 400 from groove 302.As shown in the figure, comprise the 303' of first and second portion 303 " three-dimensional masking film structure 303 be retained in groove 302.Note, three-dimensional masking film structure 303 can also comprise the third part 303 of part upper surface 301a that can covered substrate 301 " ', but this does not shown in Figure 3ly illustrate in Fig. 9 E, Fig. 9 E can be clearly corresponding to the section of the hatching A-A' along in Fig. 3.
Illustratively, according to some embodiment, comprise that the die 400 of three-dimensional (3D) imprinted pattern can be deposited in the groove 302 in substrate 301,3D pattern can be arrived in groove 320 at least in part.Do not have the part of the groove 302 of die 400 can use subsequently the trench fill material 921(for example can hardened material, such as for example polymer resist) fill.According to some embodiment, the trench fill material 921 of can hardening after deposition trench fill material 921 and before removal die 400.For example, according to trench fill material material 921, are embodiment for photosensitive resist material, resist can be exposed to light to be cross-linked the polymer chain in anticorrosive additive material.In this case, die 400 can be configured to transparent die and make the light process for the resist that exposes.According to other embodiment, such as temperature or voltage that crosslinked (or deliquescent variation) of the resist of polymer can also promote by application are realized.
According to an embodiment, can after removing die 400, carry out the cleaning of the step of for example glistening/cave in, with the sidewall 312 removal trench fill material 921(from for example groove 302 for example, possible residue thin polymer film (for example resist film)).
According to some embodiment, as mentioned above, three-dimensional (3D) mask structure 303(is 3D polymerization mask for example) for example can be for the follow-up metallization process such as pattern electroplating technology.For example, according to some embodiment, substrate 301 can also further be processed with the similar fashion of describing in conjunction with Fig. 5 F and Fig. 5 G above, and according to some embodiment, for example, can obtain the identical or similar structures as shown in Fig. 6 to 8.
Hereinbefore, each embodiment with the Moulage device that is configured to die has been described.According to some embodiment, Moulage device for example can comprise that Kun maybe can be configured to (structurized) Kun.In other words, according to some embodiment, Moulage device can comprise that Kun can be maybe Kun, and this Kun can be structured as and make it can comprise at least one stamping structure or pattern.Can configure stamping structure or pattern according to one or more embodiment described herein.The Kun with one or more stamping structures or pattern for example can for example, for (, on printed circuit board (PCB) (PCB)) rolling on substrate.
Figure 10 illustrates the schematic cross sectional view of Moulage device 1000, and this Moulage device is configured to Kun and can be according to using in the method for the treatment substrate of an embodiment.As shown in the figure, Moulage device 1000 is that Kun 1000 can be structured as that comprise can be for printing at groove convexity or the imprinted pattern 402 of impression.Can configure imprinted pattern 402 according to one or more embodiment described herein.Note, according to some embodiment, except the imprinted pattern 402 shown in Figure 10, Kun 1000 can also comprise additional imprinted pattern.As indicated in arrow 1050, Kun 1000 can on substrate 301 (for example, according to an embodiment on printed circuit board (PCB) (PCB)) roll.Substrate 301(is PCB for example) can comprise that groove 302(only illustrates a groove 302 in Figure 10; Yet, according to other embodiment, can there is more than one groove).Can form groove 302(or a plurality of groove according to one or more embodiment described herein).Moreover, as shown in the figure, groove 302(or a plurality of groove) can fill by trench fill material 1021.Can be according to one or more embodiment configuration trench packing materials 1021 described herein.When Kun 1000 rolls on substrate 301, the imprinted pattern 402 of Kun 1000 can print trench fill material 1021 at groove 302 convexities, draws the three-dimensional structure in groove 302.Similarly, when Kun 1000 continues to roll, can in substrate 301, in additional trenches, form additional three-dimensional structure (not shown) on substrate 301.
According to the method for the treatment substrate of an embodiment, can comprise: in substrate, form groove; At least in groove, deposit impression materials; Use Moulage device to print impression materials at groove convexity; And remove Moulage device from groove.
According to an embodiment, Moulage device can comprise that die can be maybe die, for example imprint master.
According to another embodiment, Moulage device can comprise that Kun can be maybe Kun.
According to an embodiment, substrate can comprise that semiconductor substrate can be maybe semiconductor substrate.
According to another embodiment, substrate can comprise that printed circuit board (PCB) (PCB) can be maybe printed circuit board (PCB) (PCB).
According to another embodiment, impression materials can comprise can hardened material or can be by making by hardened material.
According to another embodiment, impression materials can harden after protruding seal and before removing Moulage device.
According to another embodiment, can comprise polymerizable material or can be made by polymerizable material by hardened material.
According to another embodiment, sclerosis impression materials can comprise that following mode one of at least: impression materials is exposed to light, and tempering substrate, applies voltage to impression materials.
According to another embodiment, packing material can at least deposit in groove after removing imprinting apparatus.
According to an embodiment, packing material can comprise that metal can be maybe metal.
According to another embodiment, deposition packing material can comprise electroplating technology.In other words, can deposit packing material with electroplating technology.
According to another embodiment, Moulage device can comprise at least one pattern that is suitable for printing at groove convexity structure.
According to another embodiment, Moulage device can comprise the imprinted pattern corresponding to the three-dimensional masking film structure that at least will form in groove.
According to another embodiment, Moulage device can comprise that metal maybe can be made of metal.
According to another embodiment, Moulage device can comprise flexible material or can be made by flexible material.
According to another embodiment, Moulage device can comprise transparent material or can be made by transparent material, and sclerosis impression materials can comprise impression materials is exposed to light.
According to another embodiment, can in substrate, form at least one additional trenches, can in this at least one additional trenches, deposit impression materials, can use the impression materials in this at least one additional trenches of the protruding seal of Moulage device, and can remove Moulage device from this at least one additional trenches.
According to another embodiment, at least one additional trenches convexity, printing impression materials can implement after groove convexity prints impression materials.
According to another embodiment, at this at least one additional trenches convexity, print impression materials and print impression materials at this groove convexity and can implement simultaneously.
According to another embodiment, at least to depositing in groove at least a portion that impression materials is also included in substrate surface, deposit impression materials, and use the protruding seal impression materials of Moulage device can also comprise that protruding seal is deposited on the impression materials on substrate surface.
According to the method for the treatment substrate of another embodiment, can comprise: in substrate, form groove; Moulage device is at least set in groove; Use trench fill material to fill at least in part at least a portion of the groove that there is no Moulage device; And remove Moulage device from groove.
According to an embodiment, Moulage device can comprise that die can be maybe die, for example imprint master.
According to an embodiment, Moulage device can comprise that Kun can be maybe Kun.
According to an embodiment, trench fill material can comprise it can hardened material can being maybe can hardened material, and trench fill material can and hardened after using trench fill material filling part groove before groove removal Moulage device.
According to another embodiment, sclerosis trench fill material can comprise that following mode one of at least: trench fill material is exposed to light; Tempering substrate; Apply voltage.
According to another embodiment, after removing imprinting apparatus, can at least in groove, deposit packing material.
According to an embodiment, packing material can comprise that metal can be maybe metal.
According to another embodiment, deposition packing material can comprise electroplating technology.In other words, can deposit packing material with electroplating technology.
According to another embodiment, Moulage device can comprise the imprinted pattern corresponding to the three-dimensional masking film structure that at least will form in groove.
According to another embodiment, Moulage device can comprise that metal maybe can be made of metal.
According to another embodiment, Moulage device can comprise flexible material or can be made by flexible material.
According to another embodiment, Moulage device can comprise transparent material or can be made by transparent material; And sclerosis trench fill material can comprise trench fill material is exposed to light.
According to another embodiment, can in substrate, form at least one additional trenches; Can at least in this at least one additional trenches, Moulage device be set; Can use trench fill material to fill at least in part at least a portion of this at least one additional trenches that there is no Moulage device; And can remove Moulage device from this at least one additional trenches.
According to the method for the treatment substrate of another embodiment, can comprise: in substrate, form groove; On substrate, deposit impression materials, use thus impression materials filling groove at least in part; By means of the imprint master having corresponding to the imprinted pattern of the reverse side of mask structure, at groove convexity, print impression materials, at least in groove, form thus mask structure; The impression materials of protruding seal hardens; And remove imprint master from groove.
According to an embodiment, the impression materials of the protruding seal that hardens one of can comprise the following steps at least: impression materials is exposed to light; Tempering substrate; To impression materials, apply voltage.
According to another embodiment, impression materials can comprise photosensitive impression resist or can be made by photosensitive impression resist, and the impression materials of the protruding seal that hardens can comprise impression materials is exposed to light.
According to another embodiment, impression materials can comprise impression resist or can be made by impression resist.
According to another embodiment, impression materials can comprise transparent material or can be made by transparent material.
According to another embodiment, packing material can be deposited on substrate after removing imprint master, uses thus packing material at least to fill those parts of the groove of the impression materials that there is no protruding seal.
According to another embodiment, packing material can comprise that metal maybe can be made of metal.
Hereinafter, will some feature, aspect and the effect of exemplary embodiment be described.
According to some embodiment, be provided for the structurized impression class of three-dimensional (3D) technique.
According to some embodiment, can use the imprint step of modification, wherein Moulage device (for example imprint master) can also be for for example, at third dimension degree (, groove in) limiting structure.
According to some embodiment, the die that can be used for " grand impression " can be designed as has the pattern that is applicable to print at deep trench convexity structure.
According to some embodiment, provide the technique that can be included in non-planar surfaces (for example for example, can have, on the surface of one or more grooves (deep trench) or depression) printing.
According to some embodiment, provide " step " structuring that can be included in two or more topological levels to produce thus the technique of three-D pattern.
According to some embodiment, the technique that can use die (or a plurality of die) is provided, and this die (or a plurality of die) can have and is of use not only in the pattern (or a plurality of pattern) of the upper print structure of plane surface (for example wafer surface of plane) and also has for for example, pattern (or a plurality of pattern) in the protruding seal structure of third dimension degree (in groove).
The effect of some embodiment can be maybe can comprise:
-(for example, comparing with multistep photoetching process) can use fewer object processing step realize 3D structuring and/or
-can realize 3D structuring (for example, avoiding expensive process or the expensive tool such as two photon absorption) with lower cost.
According to some embodiment, can realize and use the 3D object construction of can not (or only under condition of relatively high complexity and/or cost) realizing such as the standard technology of for example standard photolithography process.For example, according to some embodiment, can realize the 3D mask structure in dark substrate groove.In this case, standard photoetching will face serious problem (resist thickness, the degree of depth deficiency of focusing, the generation of the stray light at edge, the unsteadiness of (a plurality of) resist wall causing due to the solvent loss of curing, about the restriction of the slope of sidewall etc.) or even lost efficacy.On the other hand, because can not arrive the structure in deep trench, two-photon photoetching also may be lost efficacy.Finally, may not use standard nano-imprint process, because they are only designed for print structure on smooth surface.
Although illustrate especially and described the present invention with reference to specific embodiment, it will be appreciated by those skilled in the art that and do not departing under the condition of the spirit and scope of the present invention that are defined by the following claims, can make the various variations in form and details.Scope of the present invention thereby indicated by claims, and the meaning of equal value and all changes in scope that drop on claim are intended to be contained.
Background technology
In semiconductor processes, may wish to realize three-dimensional (3D) structure.The method that realizes 3D structure for example comprises photoetching process.For example, for example, yet creating 3D structure by means of photoetching process may be arduous (, may need processing step many times) and/or expensive the use of two photon absorption technique, expensive tool (, due to).Standard technology (for example, standard microlithography processes or nano-imprint process) only can limit two dimension (level) structure.
Accompanying drawing explanation
In figure, spread all over different views, the identical parts of the general expression of identical reference symbol.Accompanying drawing is not necessarily to scale, but generally focuses in explanation principle of the present invention.In the following description, with reference to accompanying drawing below, each embodiment is described, in accompanying drawing:
Fig. 1 is that explanation is according to the diagram of the method for the treatment substrate of an embodiment;
Fig. 2 is that explanation is according to the diagram of the method for the treatment substrate of an embodiment;
Fig. 3 illustrates can be by means of the perspective schematic view of the exemplary three dimensional structure obtaining according to the method for the treatment substrate of an embodiment;
Fig. 4 illustrates the perspective schematic view of Moulage device, and this Moulage device is configured to the die that can use in the method with the three-dimensional structure of acquisition Fig. 3 according to the treatment substrate of an embodiment;
Fig. 5 A to 5G illustrates the schematic cross sectional view of substrate, for illustrating according to the different phase of the method for the treatment substrate of an embodiment;
Fig. 6 illustrates the schematic cross sectional view of substrate, for illustrating to use according to the method for the treatment substrate of an embodiment, forms metallization structure;
Fig. 7 illustrates the schematic top view of die array, for illustrating to use according to the method for the treatment substrate of an embodiment, forms die metal structure;
Fig. 8 illustrates the perspective schematic view of tube core, for illustrating to use according to the method for the treatment substrate of an embodiment, forms die metal structure;
Fig. 9 A to 9E illustrates the schematic cross sectional view of substrate, for illustrating according to the different phase of the method for the treatment substrate of an embodiment;
Figure 10 illustrates the schematic cross sectional view of Moulage device, and this Moulage device is configured to can be according to the Kun using in the method for the treatment substrate of some embodiment.

Claims (6)

1. a method for treatment substrate, comprising:
In substrate, form groove;
At least in groove, deposit impression materials;
Use Moulage device to print impression materials at groove convexity;
From groove, remove Moulage device;
After removing Moulage device, at least in groove, deposit packing material; And
After deposition packing material, from groove, remove impression materials;
Wherein during removing impression materials, packing material is retained in groove.
2. method according to claim 1,
Wherein substrate comprises semiconductor substrate.
3. method according to claim 1,
Wherein comprise can hardened material for impression materials.
4. method according to claim 3,
Impression materials hardens after being also included in protruding seal and before removing Moulage device.
5. method according to claim 3,
Wherein can comprise polymerizable material by hardened material.
6. method according to claim 4, the impression materials that wherein hardens comprises that following mode is one of at least:
Impression materials is exposed to light;
Tempering substrate;
To impression materials, apply voltage.
7.method according to claim 1,
Wherein packing material comprises metal.
8.method according to claim 1,
Wherein deposit packing material and comprise electroplating technology.
9.method according to claim 1,
Wherein Moulage device comprises at least one pattern that is suitable for printing at groove convexity structure.
10.method according to claim 9,
Wherein Moulage device comprises the imprinted pattern corresponding to the three-dimensional masking film structure that at least will form in groove.
11.method according to claim 1,
Wherein Moulage device comprises metal.
12.method according to claim 1,
Wherein Moulage device comprises flexible material.
13.method according to claim 6,
Wherein Moulage device comprises transparent material; And
The impression materials that wherein hardens comprises impression materials is exposed to light.
14.method according to claim 1, also comprises:
In substrate, form at least one additional trenches;
In this at least one additional trenches, deposit impression materials;
Use Moulage device to print impression materials at this at least one additional trenches convexity;
From this at least one additional trenches, remove Moulage device.
15.method according to claim 14,
Wherein at least one additional trenches convexity, print impression materials implements after groove convexity prints impression materials.
16.method according to claim 14,
Wherein at least one additional trenches convexity, print impression materials and print impression materials at groove convexity and implement simultaneously.
17.method according to claim 1,
Wherein at least in groove, deposit at least a portion that impression materials is also included in substrate surface and deposit impression materials; And wherein use the protruding seal impression materials of Moulage device also to comprise that protruding seal is deposited on the impression materials on substrate surface.
18.method according to claim 1,
Wherein Moulage device comprises die.
19.method according to claim 1,
Wherein Moulage device comprises Kun.
20.method according to claim 1,
Wherein substrate comprises printed circuit board (PCB).
21.a method for treatment substrate, comprising:
In substrate, form groove;
Moulage device is at least set in groove;
Use trench fill material to fill at least in part at least a portion of the groove that there is no Moulage device;
From groove, remove Moulage device;
After removing Moulage device, at least in groove, deposit packing material; And
After deposition packing material, from groove, remove trench fill material;
Wherein during removing trench fill material, packing material is retained in groove.
22.method according to claim 21,
Wherein comprise can hardened material for trench fill material, and wherein the method be also included in use trench fill material filling part groove after and the trench fill material of hardening before removing Moulage device from groove.
23.method according to claim 22,
The trench fill material of wherein hardening comprises that following mode is one of at least:
Trench fill material is exposed to light;
Tempering substrate;
To trench fill material, apply voltage.
24.method according to claim 21,
Wherein packing material comprises metal.
25.method according to claim 21,
Wherein deposit packing material and comprise electroplating technology.
26.method according to claim 21,
Wherein Moulage device comprises the imprinted pattern corresponding to the three-dimensional masking film structure that at least will form in groove.
27.method according to claim 21, also comprises:
In substrate, form at least one additional trenches;
At least in this at least one additional trenches, Moulage device is set;
Use trench fill material to fill at least in part at least a portion of this at least one additional trenches that there is no Moulage device;
From this at least one additional trenches, remove Moulage device.
28.method according to claim 21,
Wherein Moulage device comprises die.
29.a method for treatment substrate, comprising:
In substrate, form groove;
On substrate, deposit impression materials, use thus impression materials filling groove at least in part;
By means of the imprint master having corresponding to the imprinted pattern of the reverse side of mask structure, at groove convexity, print impression materials, at least in groove, form thus mask structure;
The impression materials of protruding seal hardens; And
From groove, remove imprint master;
After removing imprint master, on substrate, deposit packing material, use thus packing material at least to fill the part of the groove of the impression materials that there is no protruding seal; And
After deposition packing material, from groove, remove impression materials;
Wherein during removing impression materials, packing material is retained in groove.
30.method according to claim 29,
The impression materials of protruding seal of wherein hardening comprises following mode one of at least:
Impression materials is exposed to light;
Tempering substrate;
To impression materials, apply voltage.
31.method according to claim 29,
Wherein impression materials comprises impression resist.
32.method according to claim 29,
Wherein packing material comprises metal.
CN201110389676.0A 2010-11-30 2011-11-30 Method of processing a substrate Expired - Fee Related CN102479686B (en)

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US20140220257A1 (en) 2014-08-07
US9126260B2 (en) 2015-09-08
US20140216677A1 (en) 2014-08-07
US9339868B2 (en) 2016-05-17
CN102479686A (en) 2012-05-30
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DE102011053390B4 (en) 2014-07-24
DE102011053390A1 (en) 2012-05-31

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