CN102479603A - Drive transformer - Google Patents
Drive transformer Download PDFInfo
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- CN102479603A CN102479603A CN201010559076XA CN201010559076A CN102479603A CN 102479603 A CN102479603 A CN 102479603A CN 201010559076X A CN201010559076X A CN 201010559076XA CN 201010559076 A CN201010559076 A CN 201010559076A CN 102479603 A CN102479603 A CN 102479603A
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Abstract
The invention discloses a double-shielded drive transformer, belonging to the technical field of electrical and electronic appliances. The drive transformer comprises a primary coil and a secondary coil, and a shielding layer is arranged between the primary coil and the secondary coil. Since the shielding layer is added in the drive transformer, the resistance of the parasitic capacitor charging and discharging path between the primary coil and the secondary coil can be reduced, the drive effect of an isolation transformer can be improved, the switching speed of a power switch tube can be increased, and thus the switching losses of the switch tube can be reduced.
Description
Technical field
The present invention discloses a kind of driving transformer, and particularly a kind of double shield driving transformer belongs to electric and electronic technical field.
Background technology
Driving transformer has been widely used in occasions such as Switching Power Supply, and the circuit structure of driving transformer is please referring to accompanying drawing 1, and it can realize square wave input, square wave output.But because the existence of the parasitic parameter of driving transformer self, thereby the use of driving transformer is affected.Please as shown in Figure 2 referring to the equivalent-circuit model behind its parasitic parameter of accompanying drawing 2 driving transformers adding: wherein CP is the primary coil parasitic capacitance; LPR is the primary coil leakage inductance, and LP is elementary magnetizing inductance, and TR1 is an ideal transformer; CR is the parasitic capacitance between the elementary secondary coil; LS is secondary magnetizing inductance, LSR secondary coil leakage inductance, and CS is the secondary coil parasitic capacitance.
Please referring to accompanying drawing 3, when driving transformer application and BUCK circuit (being the buck change-over circuit) are middle, because the existence of driving transformer self parasitic parameter causes the switching loss of its switch driven pipe to strengthen.Utilize driving transformer in the BUCK circuit during driven MOS pipe, the zero hour, metal-oxide-semiconductor was in closed condition, and the voltage of metal-oxide-semiconductor the 2nd pin is near zero volt; When the 4th pin input high level of driving transformer; The 5th pin output of driving transformer also is high level, and this moment, then the 1st pin and the 3rd pin voltage difference of metal-oxide-semiconductor reached the unlatching thresholding, and metal-oxide-semiconductor begins conducting; Electric current flows to metal-oxide-semiconductor the 3rd pin from metal-oxide-semiconductor the 2nd pin, and metal-oxide-semiconductor the 3rd pin current potential raises rapidly.Because metal-oxide-semiconductor the 3rd pin potential rise is very fast at a high speed; And the parasitic capacitance CR charging of driving transformer needs through inductance L SR, inductance L P, inductance L S and inductance L SR; So the rate of voltage rise of parasitic capacitance CR is slower than metal-oxide-semiconductor the 3rd pin rate of climb, because driving transformer the 5th pin current potential is influenced by parasitic capacitance CR, so the current potential rate of climb of transformer the 5th pin is also slow; It is slower than the 3rd pin further can to derive metal-oxide-semiconductor the 1st pin current potential rate of climb; When the voltage difference between metal-oxide-semiconductor the 1st pin and the 3rd pin was opened thresholding near metal-oxide-semiconductor, then metal-oxide-semiconductor got into saturation condition, and this moment, the metal-oxide-semiconductor loss ratio was bigger.When metal-oxide-semiconductor turn-offs, have this problem equally: the zero hour, metal-oxide-semiconductor was in open mode, and metal-oxide-semiconductor the 2nd pin voltage is near 1200V; When driving transformer the 4th pin input low level; The output of driving transformer the 5th pin also is low level, and this moment, metal-oxide-semiconductor began to turn-off, and the electric current that flows to the 3rd pin from metal-oxide-semiconductor the 2nd pin reduces; Because inductance L SR1 afterflow effect, metal-oxide-semiconductor the 3rd pin current potential is dragged down rapidly.Because metal-oxide-semiconductor the 3rd pin potential drop low velocity is very fast; And the parasitic capacitance CR discharge of driving transformer needs through inductance L SR, inductance L P, inductance L S and inductance L SR; So it is slow that the decrease speed of parasitic capacitance CR voltage descends than metal-oxide-semiconductor the 3rd pin voltage; Because driving transformer the 5th pin current potential is influenced by parasitic capacitance CR,, further can derive pressure reduction increasing between metal-oxide-semiconductor the 1st pin and the 3rd pin so driving transformer the 5th pin current potential decrease speed is also slow.Final metal-oxide-semiconductor gets into saturation condition when the pressure reduction between metal-oxide-semiconductor the 1st pin and the 3rd pin during near the unlatching thresholding of metal-oxide-semiconductor, and the metal-oxide-semiconductor loss is also bigger at this moment.
Summary of the invention
Be applied in the BUCK circuit to the above-mentioned driving transformer of mentioning of the prior art; Can cause the loss bigger shortcoming of metal-oxide-semiconductor when opening and turn-off in the BUCK circuit; The present invention provides a kind of new driving transformer structure; It adds screen in driving transformer, reduce the impedance that parasitic capacitance between the elementary secondary coil discharges and recharges the path, addresses the above problem.
The technical scheme that the present invention solves its technical problem employing is: a kind of driving transformer, comprise primary coil and secondary coil, and be provided with screen between primary coil and the secondary coil.
The technical scheme that the present invention solves its technical problem employing further comprises:
Described screen is provided with two-layer, and first screen is corresponding to the primary coil setting, and parasitic capacitance of formation between the primary coil, and first screen stretches out grounding pin; The secondary shielding layer is corresponding to the secondary coil setting, and parasitic capacitance of formation between the secondary coil, and the secondary shielding layer is connected with secondary coil one end; Form a parasitic capacitance between the two-layer screen.
Described transformer also comprises skeleton, and primary coil is wrapped on the skeleton, and first screen is wrapped in the primary coil outside, and the secondary shielding layer is wrapped in first screen outside, and secondary coil is wrapped in the secondary shielding layer outside.
Be wound with first insulating barrier between described first screen and the primary coil.
Described first insulating barrier adopts insulating tape.
Be wound with second insulating barrier between described secondary shielding layer and the secondary coil.
Described second insulating barrier adopts insulating tape.
Be wound with the 3rd insulating barrier between the described two-layer screen.
Described the 3rd insulating barrier adopts insulating tape.
Described screen adopts Copper Foil.
The invention has the beneficial effects as follows: the present invention adds screen in driving transformer; Reduce the impedance that parasitic capacitance between the elementary secondary coil discharges and recharges the path; Can improve the driving effect of isolating transformer, improve the switching speed of power supply switch tube, thereby reduce the switching loss of switching tube.
To combine accompanying drawing and embodiment that the present invention is further specified below.
Description of drawings
Fig. 1 is a driving transformer structural representation of the prior art.
Fig. 2 is the equivalent circuit diagram that driving transformer of the prior art adds parasitic parameter.
Fig. 3 is applied to the circuit theory diagrams of BUCK circuit for driving transformer of the prior art.
Fig. 4 is a driving transformer circuit principle structure sketch map of the present invention.
Fig. 5 is the structural principle sketch map of driving transformer of the present invention.
Fig. 6 is a cross-sectional view of the present invention.
Fig. 7 is the equivalent circuit diagram that driving transformer of the present invention adds parasitic parameter.
Fig. 8 is applied to the circuit theory diagrams of BUCK circuit for driving transformer of the present invention.
Among the figure, 1-skeleton, 2-primary coil, 3-secondary coil, 4-first screen, 5-secondary shielding layer, 6-first insulating barrier, 7-second insulating barrier, 8-the 3rd insulating barrier.
Embodiment
Present embodiment is the preferred embodiment for the present invention, and other all its principles are identical with present embodiment or approximate with basic structure, all within protection range of the present invention.
Please referring to accompanying drawing 4 and accompanying drawing 5, main improvement of the present invention is between the primary coil NP1 of driving transformer and secondary coil NS1, to add screen, to reduce the impedance that discharges and recharges the path of the parasitic capacitance between primary coil NP1 and the secondary coil NS1; In the present embodiment; Screen is provided with two-layer, and wherein, the first screen N1 is provided with corresponding to primary coil NP1; And form a parasitic capacitance between the primary coil NP1, be provided with first insulating barrier between the first screen N1 and the primary coil NP1; Secondary shielding layer N2 is provided with corresponding to secondary coil NS1, and forms a parasitic capacitance between the secondary coil NS1, is provided with second insulating barrier between secondary shielding layer N2 and the secondary coil NS1; Be provided with the 3rd insulating barrier between the first screen N1 and the secondary shielding layer N2, also form a parasitic capacitance between the first screen N1 and the secondary shielding layer N2.In the present embodiment, the first screen N1 and secondary shielding layer N2 can adopt Copper Foil, and first insulating barrier, second insulating barrier and the 3rd insulating barrier adopt insulating tape.
Please referring to accompanying drawing 6, skeleton 1 of the present invention adopts " worker " font transformer framework commonly used in the prior art, in the present embodiment; Primary coil 2 is wrapped on the skeleton 1; First insulating barrier 6 is wrapped in the outside of primary coil 2, and first screen 4 is wrapped in the outside of first insulating barrier 6, and second insulating barrier 7 is wrapped in the outside of first screen 4; Secondary shielding layer 5 is wrapped in the outside of second insulating barrier 7; The 3rd insulating barrier 8 is wrapped in the outside of secondary shielding layer 5, and secondary coil 3 is wrapped in the outside of the 3rd insulating barrier 8, and promptly secondary coil 3 is wrapped in the outermost of transformer.In the present embodiment, first screen 4 is connected with independent grounding pin, stretches out in the transformer body outside, and secondary shielding layer 5 directly is connected secondary coil 3 one ends.
Please referring to accompanying drawing 7, the equivalent model that the driving transformer among the present invention adds behind the parasitic parameter is as shown in Figure 6: wherein CP is the primary coil parasitic capacitance, and LPR is the primary coil leakage inductance; LP is elementary magnetizing inductance, and TR1 is an ideal transformer, and LS is secondary magnetizing inductance; LSR secondary coil leakage inductance, CS is the secondary coil stray inductance, N1 and N2 are screen; CR1 is the parasitic capacitance between screen N1 and the N2, and CR2 is a parasitic capacitance between screen N1 and the primary coil, and CR3 is a parasitic capacitance between screen N2 and the secondary coil; Its inductance is very little, can ignore and not remember.
Please referring to accompanying drawing 8, the circuit theory diagrams that apply the present invention to the BUCK circuit are as shown in Figure 7:
Because it is very little that the potential difference of parasitic capacitance CR2 and parasitic capacitance CR3 changes, their time of discharging and recharging can ignore, and emphasis is considered the influence of parasitic capacitance CR1 to metal-oxide-semiconductor.The zero hour, metal-oxide-semiconductor was closed, and the voltage of metal-oxide-semiconductor the 2nd pin is near zero volt, when driving transformer the 4th pin input high level; The 5th pin output of driving transformer also is high level, and when the voltage between metal-oxide-semiconductor the 1st pin and the 3rd pin reached the unlatching thresholding, this moment, metal-oxide-semiconductor began conducting; Electric current flows to the 3rd pin from metal-oxide-semiconductor the 2nd pin; The current potential of metal-oxide-semiconductor the 3rd pin raises rapidly, and parasitic capacitance CR1 directly charges through Copper Foil N1 and Copper Foil N2, so the rate of voltage rise of parasitic capacitance CR1 and metal-oxide-semiconductor the 3rd pin rate of climb are similar; This moment, transformer the 5th pin current potential was not just influenced by parasitic capacitance CR1 can; So when metal-oxide-semiconductor is directly opened, and can not get into saturatedly, this moment, the metal-oxide-semiconductor turn-on consumption was less.When metal-oxide-semiconductor turn-offed, the zero hour, metal-oxide-semiconductor was in conducting state, and metal-oxide-semiconductor the 2nd pin voltage is near 1200V; When driving transformer the 4th pin input low level; The output of driving transformer the 5th pin also is low level, and this moment, metal-oxide-semiconductor began to turn-off, and flowed to the 3rd pin electric current from metal-oxide-semiconductor the 2nd pin and reduced; Because inductance L SR1 afterflow effect, metal-oxide-semiconductor the 3rd pin current potential is dragged down rapidly.Because metal-oxide-semiconductor the 3rd pin potential drop low velocity is very fast; Parasitic capacitance CR1 discharge is directly through Copper Foil N1 and Copper Foil N2; So parasitic capacitance CR1 voltage decrease speed and metal-oxide-semiconductor the 3rd underfooting reduction of speed degree are basic identical; Driving transformer the 5th pin current potential is not influenced by parasitic capacitance CR1 can, so metal-oxide-semiconductor directly turn-offs and can not get into saturation condition, this moment, the metal-oxide-semiconductor turn-off power loss was little.
The present invention adds screen in driving transformer, reduce the impedance that parasitic capacitance between the elementary secondary coil discharges and recharges the path, can improve the driving effect of isolating transformer, improves the switching speed of power supply switch tube, thereby reduces the switching loss of switching tube.
Claims (10)
1. a driving transformer comprises primary coil and secondary coil, it is characterized in that: be provided with screen between described primary coil and the secondary coil.
2. driving transformer according to claim 1 is characterized in that: described screen is provided with two-layer, and first screen is corresponding to the primary coil setting, and parasitic capacitance of formation between the primary coil, and first screen stretches out grounding pin; The secondary shielding layer is corresponding to the secondary coil setting, and parasitic capacitance of formation between the secondary coil, and the secondary shielding layer is connected with secondary coil one end; Form a parasitic capacitance between the two-layer screen.
3. driving transformer according to claim 2; It is characterized in that: described transformer also comprises skeleton, and primary coil is wrapped on the skeleton, and first screen is wrapped in the primary coil outside; The secondary shielding layer is wrapped in first screen outside, and secondary coil is wrapped in the secondary shielding layer outside.
4. driving transformer according to claim 3 is characterized in that: be wound with first insulating barrier between described first screen and the primary coil.
5. driving transformer according to claim 4 is characterized in that: described first insulating barrier adopts insulating tape.
6. driving transformer according to claim 3 is characterized in that: be wound with second insulating barrier between described secondary shielding layer and the secondary coil.
7. driving transformer according to claim 6 is characterized in that: described second insulating barrier adopts insulating tape.
8. driving transformer according to claim 3 is characterized in that: be wound with the 3rd insulating barrier between the described two-layer screen.
9. driving transformer according to claim 8 is characterized in that: described the 3rd insulating barrier adopts insulating tape.
10. according to any described driving transformer in the claim 1 to 9, it is characterized in that: described screen adopts Copper Foil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010559076.XA CN102479603B (en) | 2010-11-25 | 2010-11-25 | Drive transformer of switch tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010559076.XA CN102479603B (en) | 2010-11-25 | 2010-11-25 | Drive transformer of switch tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102479603A true CN102479603A (en) | 2012-05-30 |
| CN102479603B CN102479603B (en) | 2014-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010559076.XA Expired - Fee Related CN102479603B (en) | 2010-11-25 | 2010-11-25 | Drive transformer of switch tube |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103646760A (en) * | 2013-11-28 | 2014-03-19 | 宝电电子(张家港)有限公司 | Transformer and driving power supply with same |
| WO2016030114A1 (en) * | 2014-08-29 | 2016-03-03 | Robert Bosch Gmbh | Inductive energy transmission system |
| CN106208346A (en) * | 2016-07-20 | 2016-12-07 | 合肥联信电源有限公司 | A kind of isolated emergency power system |
| CN107993818A (en) * | 2018-01-09 | 2018-05-04 | 江苏海湾电气科技有限公司 | Audio-frequency transformer |
| CN114365367A (en) * | 2019-09-11 | 2022-04-15 | 3M创新有限公司 | Transformer and apparatus configured to provide a current limited power supply and a galvanic barrier |
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| JPH0745451A (en) * | 1993-07-29 | 1995-02-14 | Hitachi Ltd | Switching transformer |
| CN1787130A (en) * | 2005-12-02 | 2006-06-14 | 吴孟齐 | Low interference transformer |
| CN101114541A (en) * | 2006-07-28 | 2008-01-30 | 台达电子工业股份有限公司 | Power source converter and transformer |
| CN101236827A (en) * | 2007-03-30 | 2008-08-06 | 广州市中奕通讯设备有限公司 | Method and product for solving the electromagnetic compatibility of no Y capacitance switch power transformer |
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2010
- 2010-11-25 CN CN201010559076.XA patent/CN102479603B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0745451A (en) * | 1993-07-29 | 1995-02-14 | Hitachi Ltd | Switching transformer |
| CN1787130A (en) * | 2005-12-02 | 2006-06-14 | 吴孟齐 | Low interference transformer |
| CN101114541A (en) * | 2006-07-28 | 2008-01-30 | 台达电子工业股份有限公司 | Power source converter and transformer |
| CN101236827A (en) * | 2007-03-30 | 2008-08-06 | 广州市中奕通讯设备有限公司 | Method and product for solving the electromagnetic compatibility of no Y capacitance switch power transformer |
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| 王亮: "开关电源变压器屏蔽层抑制共模EMI的研究", 《低压电器》, no. 15, 15 August 2010 (2010-08-15) * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103646760A (en) * | 2013-11-28 | 2014-03-19 | 宝电电子(张家港)有限公司 | Transformer and driving power supply with same |
| WO2016030114A1 (en) * | 2014-08-29 | 2016-03-03 | Robert Bosch Gmbh | Inductive energy transmission system |
| CN106605151A (en) * | 2014-08-29 | 2017-04-26 | 罗伯特·博世有限公司 | Inductive energy transmission system |
| JP2017535227A (en) * | 2014-08-29 | 2017-11-24 | ローベルト ボッシュ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Inductive energy transmission system and method of manufacturing inductive energy transmission system |
| US10249432B2 (en) | 2014-08-29 | 2019-04-02 | Robert Bosch Gmbh | Inductive energy transmission system |
| CN106605151B (en) * | 2014-08-29 | 2020-08-11 | 罗伯特·博世有限公司 | Inductive energy transfer system |
| CN106208346A (en) * | 2016-07-20 | 2016-12-07 | 合肥联信电源有限公司 | A kind of isolated emergency power system |
| CN107993818A (en) * | 2018-01-09 | 2018-05-04 | 江苏海湾电气科技有限公司 | Audio-frequency transformer |
| CN107993818B (en) * | 2018-01-09 | 2019-01-11 | 江苏海湾电气科技有限公司 | Audio-frequency transformer |
| CN114365367A (en) * | 2019-09-11 | 2022-04-15 | 3M创新有限公司 | Transformer and apparatus configured to provide a current limited power supply and a galvanic barrier |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102479603B (en) | 2014-08-13 |
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Effective date of registration: 20170612 Address after: 163712 Heilongjiang Province, Daqing City Ranghulu District Sun Jia City four CS17 are 11 Patentee after: Heilongjiang Ruixin permanent magnet motor manufacturing Co. Ltd. Address before: 518057, building 4, Longjing high tech park, Nanshan District, Guangdong, Shenzhen Patentee before: Shenzhen Yingweiteng Electric Co., Ltd. |
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Effective date of registration: 20180612 Address after: 518055 Guangdong Shenzhen Nanshan District Longjing high tech Industrial Park 4 factory building Patentee after: Shenzhen Yingweiteng Electric Co., Ltd. Address before: 163712 Daqing City, Heilongjiang Province, the four phase of sunshine city, CS17, 11 Patentee before: Heilongjiang Ruixin permanent magnet motor manufacturing Co. Ltd. |
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Granted publication date: 20140813 Termination date: 20181125 |
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