CN102469675A - Power matching apparatus and semiconductor equipment - Google Patents
Power matching apparatus and semiconductor equipment Download PDFInfo
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- CN102469675A CN102469675A CN2010105377434A CN201010537743A CN102469675A CN 102469675 A CN102469675 A CN 102469675A CN 2010105377434 A CN2010105377434 A CN 2010105377434A CN 201010537743 A CN201010537743 A CN 201010537743A CN 102469675 A CN102469675 A CN 102469675A
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Abstract
The invention discloses a power matching apparatus used in semiconductor equipment. The apparatus comprises: a sensor and a matching network, wherein the sensor is connected with a power source of the semiconductor equipment and is used to collect signals of the power source and acquire an impedance adjustment amount; the matching network is connected with the sensor and is used to adjust an output impedance of the matching network so as to match with an input impedance of a reaction chamber of the semiconductor equipment according to the impedance adjustment amount from the sensor and is also used to filter a signal whose frequency is different from the frequency of the signal of the power source. Therefore, a power supply used by a top electrode and a lower electrode and the power matching apparatus work normally and a matching scope of the power matching apparatus can not be influenced. The invention further discloses the semiconductor equipment.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of improved power match device and semiconductor equipment.
Background technology
How metal material in integrated circuit is through the semiconductor equipment preparation.Wherein semiconductor equipment comprises PVD (Physical Vapor Deposition, physical vapour deposition (PVD)) equipment, plasma enhanced chemical vapor deposition (PECVD) equipment and LED etching machine.The said equipment all can be used for the deposition of metallic films such as aluminium, copper, to constitute Metal Contact, metal interconnecting wires etc.
Wherein, be example with PVD, the PVD technology is one type of thin film fabrication technology the most widely using in the semi-conductor industry, general reference adopts physical method to prepare the thin film preparation process of film.In the integrated circuit manufacturing, refer in particular to magnetron sputtering (Magnetron Sputtering) technology, be mainly used in the deposition of metallic films such as aluminium, copper, to constitute Metal Contact, metal interconnecting wires etc.Particularly; PVD is meant under vacuum condition, adopts the arc-discharge technique of low-voltage, big electric current, utilizes gas discharge to make the target evaporation and make to be evaporated material and ionization all takes place gas; Utilize the acceleration of electric field, make to be evaporated material and product is deposited on the workpiece.
In the PVD technology, the dual frequency plasma energy transmission technology is widely applied to the activation of process gas in the PVD reative cell, and it has significant improvement to improving the plasma etching uniformity.The input of double frequency energy is that the energy of two kinds of different frequencies is imported reaction chamber simultaneously, and this double frequency energy is generally provided by the power source of low-frequency power, high frequency electric source two different frequencies respectively.Usually the frequency of low-frequency power is less than 10MHz, and it is used for controlling energy of plasma, high frequency electric source greater than 10Mhz, it is used for controlling plasma density.The frequency of low-frequency power at present commonly used is generally 2MHz or 400kHZ, and the frequency of high frequency electric source is generally 13.56MHz, 27MHz or 60MHz.In order the chamber that be transferred to of the Energy Efficient of power source to be installed impedance-matching device between high frequency electric source and plasma cavity load.Because the impedance of plasma is a real-time change, for the real-time matched impedance of ability, coalignment is normally automatic.
Be provided with under the prerequisite of protective device at existing power source self, though use same frequency two power supplys as the double frequency energy, do not need the interference between the consideration of power source, the technological effect of PVD is unsatisfactory.In order in the pvd chamber chamber, to obtain better technological effect, the power supply of most two kinds of different frequencies among the existing preparation technology.Therefore, for the power supply of two kinds of frequencies can be used simultaneously and non-interference, must transform existing adaptation, the filter that increase has isolation features is to prevent the generation of above-mentioned phenomenon.
As shown in Figure 1, existing power match device 120 ' generally includes following part: transducer 5 ' and matching network 8 '.Wherein, matching network 8 ' also comprises: the variable vacuum capacitance of the first variable vacuum capacitance 1 ', second 2 ', first inductance 3 ' and second inductance 4 '.First inductance 3 ' is the inductance that is connected the copper cash equivalence with second inductance 4 '.The energy of power power-supply through transducer 5 ' and matching network 8 ', outputs to pvd chamber chamber by output 7 ' from input 6 ' input.Transducer 5 ' is constantly gathered the current/voltage of output 7 ' and is calculated impedance in technical process.Matching network 8 ' is through corresponding optimized Algorithm then; Constantly the capacitance of the adjustment first variable vacuum capacitance 1 ' and the second variable vacuum capacitance 2 ' makes the impedance that the output 7 ' of coalignment 120 ' is exported and the impedance conjugation of pvd chamber chamber, and the energy of power source just can be delivered to the pvd chamber chamber to greatest extent thus.Above-mentioned coalignment can lay respectively at top electrode and the bottom electrode place in the pvd chamber chamber.
But; Because the influence of electromagnetic field couples; Cause the power supply of top electrode to arrive the bottom electrode power supply at last through matching network and the transducer that its RF output end enters into bottom electrode; Thereby between top electrode and bottom electrode, form the loop, and then make the power supply and the transducer cisco unity malfunction of bottom electrode.If under the very big situation of the coupling coefficient between coil and the bottom electrode, can cause the bottom electrode power supply to burn.The electromagnetic field of bottom electrode generation in like manner also can be coupled to top electrode power supply and transducer through coil, thereby causes the top electrode power supply to burn.
Summary of the invention
The object of the invention is intended to one of solve the problems of the technologies described above at least; Propose a kind of power match device that is used for semiconductor equipment, the matching network of this power match device can be complementary according to output impedance and the reaction chamber input impedance of adjusting matching network from the impedance of transducer.And matching network also can be with the target signal filter from other power sources; Make it can't arrive the power source that power match device of the present invention is connected; And then the coil that can not cause use generates an electromagnetic field and the coupling of the electromagnetic field of other electrodes; Avoided burning of power source, thereby can make the power source operate as normal.
In addition, the present invention also need propose a kind of semiconductor equipment with above-mentioned power match device.
Be in solving the problems of the technologies described above at least one; One side of the present invention has proposed a kind of power match device that is used for semiconductor equipment; Comprise: transducer; Said transducer links to each other with the power source of said semiconductor equipment, is used to gather the signal from said power source, obtains the impedance adjustment amount; And matching network; Said matching network links to each other with said transducer; Be used for according to impedance adjustment amount from said transducer; The output impedance of adjusting said matching network is complementary with the input impedance with the reaction chamber of said semiconductor equipment, and is used for the signal frequency various signals of filtering and said power source.
According to the power match device that is used for Pvd equipment of the embodiment of the invention, matching network can be according to being complementary from the output impedance of the impedance of transducer adjustment matching network and the input impedance of reaction chamber.And; Matching network is arranged between reaction chamber and the power source; Thereby can make it can't arrive the power source that power match device of the present invention is connected target signal filter, and then can not cause the coupling with the electromagnetic field of other electrodes that generates an electromagnetic field of the coil of use from other power sources; Avoided burning of power source, thereby can make the power source operate as normal.
In one embodiment of the invention; Said matching network also comprises: first impedance matching unit and second impedance matching unit; The first end ground connection of said first impedance matching unit; Said transducer is connected with second end of said first impedance matching unit and first end of said second impedance matching unit respectively, and said first impedance matching unit and second impedance matching unit are used for according to being complementary with the input impedance with the reaction chamber of said semiconductor equipment from the output impedance of the impedance adjustment amount of said transducer adjustment matching network; And filter unit, said filter unit links to each other with second end of said second impedance matching unit, is used for the signal frequency various signals of filtering and said power source.Thus, first impedance matching unit and second impedance matching unit be as variable impedance element, through adjusting the parameter value of its element, and then can adjust the output impedance of matching network.And; Filter unit can be with the target signal filter from other electrode power sources; Make it can't arrive the power source that power match device of the present invention connects; And then the coil that can not cause use generates an electromagnetic field and the coupling of the electromagnetic field of other electrodes, has avoided burning of power source, thereby can make the power source operate as normal.
In one embodiment of the invention; Said matching network also comprises: first impedance matching unit, second impedance matching unit and filter unit; The first end ground connection of said first impedance matching unit; Said transducer links to each other with second end of said first impedance matching unit and first end of said filter unit respectively; Second end of said filter unit links to each other with said second impedance matching unit, and said first impedance matching unit and second impedance matching unit are used for according to being complementary with the input impedance with the reaction chamber of said semiconductor equipment from the output impedance of the impedance adjustment amount of said transducer adjustment matching network; Said filter unit is used for the signal frequency various signals of filtering and said power source.
In one embodiment of the invention, filter unit is band pass filter, band stop filter, low pass filter or high pass filter.Thus, filter unit can be the filter of one of above-mentioned form, all can realize the filtering from the signal of other power sources.
Embodiments of the invention have also proposed a kind of semiconductor equipment, comprise reaction chamber, be arranged at the inner bracing or strutting arrangement of said reaction chamber, and further comprise: the upper electrode power source, and said upper electrode power source is used to provide first power signal; The lower electrode power source, said lower electrode power source is used to provide second power signal; Wherein, The frequency of said first power signal is different with the frequency of second power signal; The upper electrode power coalignment, said upper electrode power coalignment is connected with said upper electrode power source, is used for the output impedance of said upper electrode power coalignment and the input impedance of said reaction chamber are mated; And the frequency signal inequality that is used for the filtering and first power signal, said upper electrode power coalignment are aforesaid power match device; With the lower electrode power coalignment; Said lower electrode power coalignment is connected in said bracing or strutting arrangement; And be connected with said lower electrode power source; Be used for the output impedance of said lower electrode power coalignment and the input impedance of said reaction chamber are mated, and be used for the frequency signal inequality of the filtering and second power signal, said lower electrode power coalignment is aforesaid power match device.
Semiconductor equipment according to the embodiment of the invention; Through the power supply interference signal of upper electrode power coalignment filtering from the lower electrode power source; And through the power supply interference signal of lower electrode power coalignment filtering from the upper electrode power source; Thereby can make the power supply and the power match device operate as normal of the use of top electrode and bottom electrode, and can not influence the matching range of impedance.
In one embodiment of the invention; Said upper electrode power coalignment comprises: first sensor; Said first sensor links to each other with said upper electrode power source, is used to gather first power signal from said upper electrode power source, and obtains the impedance adjustment amount; With first matching network; Said first matching network links to each other with said first sensor; Be used for according to impedance adjustment amount from said first sensor; The output impedance of adjusting said upper electrode power coalignment is complementary with the input impedance with said reaction chamber, and is used for the frequency signal inequality of the filtering and first power signal.Thus, first matching network can be according to being complementary from the output impedance of the impedance of first sensor adjustment adjustment upper electrode power coalignment and the input of reaction chamber.And; First matching network is arranged between reaction chamber and the upper electrode power source; Thereby can make it can't arrive the upper electrode power source target signal filter, and then the coil that can not cause top electrode to use generate an electromagnetic field and the coupling of the electromagnetic field of bottom electrode from the lower electrode power source; Avoided burning of upper electrode power source, thereby can make upper electrode power source operate as normal.
In one embodiment of the invention; Said first matching network also comprises: top electrode first impedance matching unit and top electrode second impedance matching unit; The first end ground connection of said first impedance matching unit; Said first sensor is connected with second end of said top electrode first impedance matching unit and first end of said top electrode second impedance matching unit respectively; Said top electrode first impedance matching unit and top electrode second impedance matching unit are used for according to the impedance adjustment amount from said first sensor, and the output impedance of adjusting said upper electrode power coalignment is complementary with the input impedance with said reaction chamber; With first filter unit, said first filter unit links to each other with second end of said top electrode second impedance matching unit, is used for the frequency signal inequality of the filtering and first power signal.Thus, top electrode first impedance matching unit and top electrode second impedance matching unit be as variable impedance element, through adjusting the parameter value of its element, and then can adjust the output impedance of upper electrode power coalignment.And; First filter unit can be with the target signal filter from the lower electrode power source; Make it can't arrive the upper electrode power source; And then the coil that can not cause top electrode to use generates an electromagnetic field and the coupling of the electromagnetic field of bottom electrode, has avoided burning of upper electrode power source, thereby can make upper electrode power source operate as normal.
In one embodiment of the invention; Said first matching network also comprises: electrode first impedance matching unit, top electrode second impedance matching unit and first filter unit; The first end ground connection of said top electrode first impedance matching unit; Said first sensor links to each other with second end of said top electrode first impedance matching unit and first end of said first filter unit respectively; Second end of said first filter unit links to each other with said top electrode second impedance matching unit; Said top electrode first impedance matching unit and top electrode second impedance matching unit are used for according to the impedance adjustment amount from said first sensor, and the output impedance of adjustment upper electrode power coalignment is complementary with the input impedance with said reaction chamber, and said first filter unit is used for the frequency signal inequality of the filtering and first power signal.
In one embodiment of the invention, said first filter unit is band pass filter, band stop filter, low pass filter or high pass filter.Thus, first filter unit all can be realized the filtering from the lower electrode power source signal through the filter of one of above-mentioned form.
In one embodiment of the invention; Said lower electrode power coalignment comprises: second transducer; Said second transducer links to each other with said lower electrode power source, is used to gather second power signal from said lower electrode power source, and obtains the impedance adjustment amount; With second matching network; Said second matching network links to each other with said second transducer; Be used for according to impedance adjustment amount from said second transducer; The output impedance of adjusting said lower electrode power coalignment is complementary with the input impedance with said reaction chamber, and is used for the frequency signal inequality of the filtering and second power signal.Thus, second matching network can be according to being complementary from the output impedance of the impedance adjustment amount of second transducer adjustment lower electrode power coalignment and the input impedance of reaction chamber.And; Second matching network is arranged between reaction chamber and the lower electrode power source; Thereby can make it can't arrive the lower electrode power source target signal filter, and then the coil that can not cause bottom electrode to use generate an electromagnetic field and the coupling of the electromagnetic field of top electrode from the upper electrode power source; Avoided burning of lower electrode power source, thereby can make upper electrode power source operate as normal.
In one embodiment of the invention; Said second matching network also comprises: bottom electrode first impedance matching unit and bottom electrode second impedance matching unit; The first end ground connection of said bottom electrode first impedance matching unit; Said second transducer is connected with second end of said bottom electrode first impedance matching unit and first end of said bottom electrode second impedance matching unit respectively; Said bottom electrode first impedance matching unit and bottom electrode second impedance matching unit are used for adjusting the output impedance of said lower electrode power coalignment according to the impedance adjustment amount from said second transducer; With second filter unit, said second filter unit links to each other with second end of said bottom electrode second impedance matching unit, is used for the frequency signal inequality of the filtering and second power signal.Thus; Bottom electrode first impedance matching unit and bottom electrode second impedance matching unit are as variable impedance element; Through adjusting the parameter value of its element, and then the output impedance that can adjust the lower electrode power coalignment is complementary with the input impedance with said reaction chamber.And; Second filter unit can be with the target signal filter from the upper electrode power source; Make it can't arrive the lower electrode power source; And then the coil that can not cause bottom electrode to use generates an electromagnetic field and the coupling of the electromagnetic field of top electrode, has avoided burning of lower electrode power source, thereby can make lower electrode power source operate as normal.
In one embodiment of the invention; Said second matching network also comprises: bottom electrode first impedance matching unit, bottom electrode second impedance matching unit and second filter unit; The first end ground connection of said bottom electrode first impedance matching unit; Said second transducer is respectively and between first end of second end of said bottom electrode first impedance matching unit and said second filter unit; Second end of said second filter unit links to each other with said bottom electrode second impedance matching unit; Said bottom electrode first impedance matching unit and bottom electrode second impedance matching unit are used for according to the impedance adjustment amount from said second transducer; The output impedance of adjustment lower electrode power coalignment is complementary with the input impedance with said reaction chamber, and said second filter unit is used for the frequency signal inequality of the filtering and second power signal.
In one embodiment of the invention, second filter unit is band pass filter, band stop filter, low pass filter or high pass filter.Thus, second filter unit can be the filter of one of above-mentioned form, all can realize the filtering from the upper electrode power source signal.
In one embodiment of the invention, the frequency of said first power signal is lower than the frequency of said second power signal.
Aspect that the present invention adds and advantage part in the following description provide, and part will become obviously from the following description, or recognize through practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously with easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 is existing power match schematic representation of apparatus;
Fig. 2 is a power match schematic representation of apparatus according to an embodiment of the invention;
Fig. 3 is a power match schematic representation of apparatus according to another embodiment of the invention;
Fig. 4 is the sketch map of semiconductor equipment according to an embodiment of the invention;
Fig. 5 is the structural representation of upper electrode power coalignment among Fig. 4;
Fig. 6 is the structural representation of lower electrode power coalignment among Fig. 4;
Fig. 7 is the circuit diagram of second filter unit among Fig. 6;
Fig. 8 is the circuit diagram of lower electrode power coalignment among Fig. 6;
Fig. 9 is the matching range sketch map relatively of lower electrode power coalignment and existing power match device among Fig. 6;
Figure 10 is existing power match device attenuation characteristic sketch map to the signal of frequency 2MHz in matching range;
Figure 11 be among Fig. 6 the lower electrode power coalignment in matching range to the attenuation characteristic sketch map of the signal of frequency 2MHz;
Figure 12 is the structural representation of lower electrode power coalignment according to another embodiment of the invention;
Figure 13 is the circuit diagram of second filter unit among Figure 12;
Figure 14 is the circuit diagram of lower electrode power coalignment among Figure 12;
Figure 15 is the structural representation of upper electrode power coalignment in accordance with another embodiment of the present invention;
Figure 16 is the matching range sketch map relatively of lower electrode power coalignment and existing power match device among Figure 12;
Figure 17 be among Figure 12 the lower electrode power coalignment in matching range to the attenuation characteristic sketch map of the signal of frequency 2MHz; With
Figure 18 is the process chart according to the magnetically controlled sputter method of the embodiment of the invention.
Embodiment
Describe embodiments of the invention below in detail, the example of said embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Be exemplary through the embodiment that is described with reference to the drawings below, only be used to explain the present invention, and can not be interpreted as limitation of the present invention.
Below referring to figs. 2 and 3 describing the power match device 120 that is used for semiconductor equipment that the embodiment of the invention offers.
Fig. 2 shows the power match device that is used for semiconductor equipment of the embodiment of the invention, and semiconductor equipment comprises the power source that reaction chamber is outer with being positioned at reaction chamber, and wherein power source can provide energy to reaction chamber.Semiconductor equipment can be physical vapor deposition (PVD) equipment, plasma enhanced chemical vapor deposition (PECVD) equipment or LED etching machine etc.
As shown in Figure 2, comprise transducer 121 and matching network 122 according to the power match device 120 of the embodiment of the invention.Wherein, transducer 121 links to each other with the power source 123 of semiconductor equipment, can gather the signal from electrode power source 123, and obtains the impedance adjustment amount.Matching network 122 links to each other with transducer 121; Can be used for according to impedance adjustment amount from transducer 121; The input impedance of the output impedance of adjustment matching network 122 and the reaction chamber of semiconductor equipment is complementary, and the signal loading after the impedance matching is arrived reaction chamber; Therewith, adjustment matching network 122 also can be used for the signal frequency various signals of filtering and power source 123.
In one embodiment of the invention, matching network 122 further comprises first impedance matching unit 1221, second impedance matching unit 1222 and filter unit 1223.The first end ground connection of first impedance matching unit 1221, transducer 121 are connected with second end of first impedance matching unit 1221 and first end of second impedance matching unit 1222 respectively.Wherein, first impedance matching unit 1221 and second impedance matching unit 1222 can be according to being complementary with the input impedance with the reaction chamber of semiconductor equipment from the output impedance of the impedance adjustment amount of transducer 121 adjustment matching network 122.Filter unit 1223 links to each other with second end of second impedance matching unit 1222, but the signal frequency various signals of filtering and power source 123.
In one embodiment of the invention; As shown in Figure 3; The first end ground connection of first impedance matching unit 1221 of matching network 122; Transducer 121 links to each other with second end of first impedance matching unit 1221 and first end of filter unit 1223 respectively, and second end of filter unit 1223 links to each other with second impedance matching unit 1222.Wherein, First impedance matching unit 1221 and second impedance matching unit 1222 can be according to the impedance adjustment amounts from transducer 121; The output impedance of adjustment matching network 122 is complementary with the input impedance with the reaction chamber of semiconductor equipment, but the filter unit 1223 signal frequency various signals of filtering and power source 123 then.
In the above-described embodiments, filter unit 1223 can be the filter of one of following form: band pass filter, band stop filter, low pass filter or high pass filter.
According to the power match device that is used for semiconductor equipment of the embodiment of the invention, matching network can be according to adjusting the output impedance of matching network from the impedance adjustment amount of transducer and the input impedance of reaction chamber is complementary.And; Matching network is arranged between reaction chamber and the power source; Thereby can make it can't arrive power source target signal filter, and then can not cause the coupling with the electromagnetic field of other electrodes that generates an electromagnetic field of the coil of use from other power sources; Avoided burning of power source, thereby can make the power source operate as normal.
The semiconductor equipment 100 of the embodiment of the invention is described with reference to figure 4 to Fig. 6 below.
Shown in Fig. 4-6; Semiconductor equipment 100 according to the embodiment of the invention comprises reaction chamber 16, is arranged at bracing or strutting arrangement, upper electrode power source 14, lower electrode power source 15, upper electrode power coalignment 12 and the lower electrode power coalignment 13 of reaction chamber 16 inside; Wherein, upper electrode power source 14 can provide first power signal; Lower electrode power source 15 can provide second power signal, and first power signal is different with the frequency of second power signal; Upper electrode power coalignment 12 links to each other with upper electrode power source 14, can mate the output impedance of upper electrode power coalignment 12 and the input impedance of reaction chamber 16, and filtering and first power signal frequency signal inequality; Lower electrode power coalignment 13 is connected in the lower surface of bracing or strutting arrangement; And be connected with lower electrode power source 15; Can mate the output impedance of lower electrode power coalignment 13 and the input impedance of reaction chamber 16, and filtering and second power signal frequency signal inequality.
In one embodiment of the invention, upper electrode power coalignment 12 is identical with the structure of lower electrode power coalignment 13.
In one embodiment of the invention, semiconductor equipment can be physical vapor deposition (PVD) equipment, plasma enhanced chemical vapor deposition (PECVD) equipment and LED etching machine.Wherein, in physical vapor deposition (PVD) equipment and plasma enhanced chemical vapor deposition (PECVD) equipment, further comprise the target 17 that is arranged on reaction chamber 16 tops.
When semiconductor equipment is a physical vapor deposition (PVD) equipment, bracing or strutting arrangement can be chuck 10.In an example of the present invention, chuck 10 can be electrostatic chuck or mechanical chuck.
Semiconductor equipment according to the embodiment of the invention; Through the power supply interference signal of upper electrode power coalignment filtering from the lower electrode power source; And through the power supply interference signal of lower electrode power coalignment filtering from the upper electrode power source; Upper electrode power source, lower electrode power source, upper electrode power coalignment and the equal operate as normal of lower electrode power coalignment can be made, and matching range can not be influenced.
Be that example describes semiconductor equipment of the present invention with physical vapor deposition (PVD) equipment below.
As shown in Figure 4, there are target 17 and target 17 to be positioned at the top of reaction chamber 16 in reaction chamber 16 set inside.Outer setting at reaction chamber 16 has the lower electrode power source 15 that the upper electrode power of first power signal source 14 can be provided and second power signal can be provided.Wherein, upper electrode power source 14 can be the single-frequency power supply with lower electrode power source 15, and the frequency of first power signal can be lower than the frequency of second power signal.For example: the frequency of first power signal is about 2MHz; The frequency of second power signal is about 13.56MHz; What those skilled in the art may appreciate that certainly is, when the frequency of the frequency of first power signal and second power signal is other frequency values, also falls into protection scope of the present invention.
As shown in Figure 5, in a concrete example of the present invention, upper electrode power coalignment 12 comprises first sensor 5a and the first matching network 8a that links to each other with first sensor 5a.Particularly, first sensor 5a links to each other with upper electrode power source 14, can gather first power signal from upper electrode power source 14, thereby obtains the impedance adjustment amount.The first matching network 8a comprises top electrode first impedance matching unit 81, top electrode second impedance matching unit 82 and the first filter unit 9a.Wherein top electrode first impedance matching unit 81 comprises the first variable vacuum capacitance 1a and the first inductance 3a, and top electrode second impedance matching unit 82 comprises the second variable vacuum capacitance 2a and the second inductance 4a.Top electrode first impedance matching unit 81 can be complementary with the input impedance with reaction chamber 16 according to the output impedance of adjusting upper electrode power coalignment 12 from the impedance adjustment amount of first sensor 5a with top electrode second impedance matching unit 82.
In one embodiment of the invention, the first inductance 3a is the inductance that is connected the equivalence of copper cash with the second inductance 4a.
As shown in Figure 5; Top electrode first impedance matching unit 81 first end ground connection; First sensor 5a links to each other with second end of top electrode first impedance matching unit 81 and first end of top electrode second impedance matching unit 82 respectively; The first filter unit 9a links to each other with second end of top electrode second impedance matching unit 82, and promptly top electrode first impedance matching unit 81, top electrode second impedance matching unit 82 are connected with the first filter unit 9a successively.Wherein the first filter unit 9a is the filter that is made up of inductance and electric capacity, through parameter setting to inductance and electric capacity, but the first power signal frequency signal inequality that filtering and upper electrode power source 14 provide.Wherein, the first power signal frequency signal inequality that provides with upper electrode power source 14 comprises second power signal (like 13.56MHz) from lower electrode power source 15.Through the first filter unit 9a pair of first power signal frequency target signal filter effect inequality that provides with upper electrode power source 14; Can filtering second power signal; Thereby lower electrode power source 15 is generated an electromagnetic field in reaction chamber 16 through lower electrode power coalignment 13 and chuck 10 can't be arrived on inductively coupled plasma (ICP) coil 11 and the last power power-supply 14; And then the coil that can not cause use generates an electromagnetic field and the coupling of the electromagnetic field of other electrodes; Avoided burning of last power power-supply 14, thereby can make power power-supply 14 operate as normal.
In one embodiment of the invention, the first filter unit 9a can be resonant circuit, and wherein resonant circuit can comprise electric capacity and inductance.The first filter unit 9a can be the filter of one of following form: band pass filter, band stop filter, low pass filter or high pass filter.
Upper electrode power coalignment 12 further links to each other with inductively coupled plasma (ICP) coil 11.Under the excitation in upper electrode power source 14, ICP coil 11 can provide electromagnetic field to reaction chamber 16.
The lower electrode power coalignment 13 of the semiconductor equipment 100 of the embodiment of the invention is described below in conjunction with Fig. 6.Lower electrode power coalignment 13 is identical with the internal structure of upper electrode power coalignment 12.Particularly, lower electrode power coalignment 13 comprises the second transducer 5b and the second matching network 8b that links to each other with the second transducer 5b.Particularly, the second transducer 5b links to each other with lower electrode power source 15, can gather second power signal from lower electrode power source 15, thereby obtains the impedance adjustment amount.The second matching network 8b comprises bottom electrode first impedance matching unit 83, bottom electrode second impedance matching unit 84 and the second filter unit 9b.Wherein bottom electrode first impedance matching unit 83 comprises the 3rd variable vacuum capacitance 1b and the 3rd inductance 3b, and bottom electrode second impedance matching unit 84 comprises the 4th variable vacuum capacitance 2b and the 4th inductance 4b.Bottom electrode first impedance matching unit 83 can be complementary with the input impedance with reaction chamber 16 according to the output impedance of adjusting lower electrode power coalignment 13 from the impedance adjustment amount of the second transducer 5b with bottom electrode second impedance matching unit 84.The second filter unit 9b is used for filtering and second power signal frequency signal inequality.
In one embodiment of the invention, the 3rd inductance 3b is the inductance that is connected the equivalence of copper cash with the 4th inductance 4b.
As shown in Figure 6; In a concrete example of the present invention; The first end ground connection of bottom electrode first impedance matching unit 83; The second transducer 5b links to each other with second end of bottom electrode first impedance matching unit 83 and first end of bottom electrode second impedance matching unit 84 respectively, and the second filter unit 9b links to each other with second end of bottom electrode second impedance matching unit 84, and promptly bottom electrode first impedance matching unit 83, bottom electrode second impedance matching unit 84 are connected with the second filter unit 9b successively.Wherein the second filter unit 9b is the filter that is made up of inductance and electric capacity; Through parameter setting to inductance and electric capacity; Can make with second power signal (like 13.56MHz) frequency signal inequality and can not pass through the second filter unit 9b, the i.e. second power signal frequency signal inequality that filtering and lower electrode power source 15 provide.Wherein, the second power signal frequency signal inequality that provides with lower electrode power source 15 comprises first power signal (like 2MHz) from upper electrode power source 14.Filtering effect through the second filter unit 9b pair of second power signal frequency that provides with lower electrode power source 15 signal inequality; Can first power signal; Thereby upper electrode power source 14 is generated an electromagnetic field in reaction chamber 16 through upper electrode power coalignment 12 and ICP coil 11 can't be arrived on chuck 10 and the following power power-supply 15; And then the coil that can not cause use generates an electromagnetic field and the coupling of the electromagnetic field of other electrodes; Avoided burning of time power power-supply 15, thereby can make down power power-supply 15 operate as normal.
In one embodiment of the invention, the second filter unit 9b can be resonant circuit, and wherein resonant circuit can comprise electric capacity and inductance.The second filter unit 9b can be the filter of one of following form: band pass filter, band stop filter, low pass filter or high pass filter.
Be that band stop filter is that example describes with reference to figure 7 with the second filter unit 9b below.As shown in Figure 7, the second filter unit 9b comprises filter inductance L3 and the filter capacitor C3 that is connected with filter inductance L3, and filter capacitor C3 further is connected to public ground.Wherein, filter inductance L3 and filter capacitor C3 are cascaded structure.In one embodiment of the invention, L3 can be 10 μ H, and C3 can be 635pF.Port1 and Port2 are divided into two links of the second filter unit 9b.
Like Fig. 7 and shown in Figure 8, the second filter unit 9b links to each other with bottom electrode second impedance matching unit 84 through Port2.In one embodiment of the invention, the electric capacity span of the 3rd variable vacuum capacitance 1b can be 150pF～1450pF, and the inductance value of the 3rd inductance 3b (L35) can be 35nH.The electric capacity span of the 4th variable vacuum capacitance 2b can be 50pF～500pF, and the inductance value of the 4th inductance 4b (L800) can be 800nH.
In one embodiment of the invention, the first sensor 5a and the second transducer 5b all can be the current/voltage transducer.
Be that example is described impedance matching and filtering with lower electrode power coalignment 13 below.
Lower electrode power source 15 provides the signal of second power signal (frequency is 13.56MHz); Can importing from the bottom electrode rf inputs 6b of lower electrode power coalignment 13 of above-mentioned signal, the second transducer 5b constantly gathers the current/voltage of lower electrode power output 6b with the computing impedance adjustment amount.The second matching network 8b according to the impedance adjustment amount through corresponding optimized Algorithm; Constantly adjust the capacitance of the 3rd variable vacuum capacitance 1b and the 4th variable vacuum capacitance 2b, thereby make the output impedance of lower electrode power coalignment 13 and the input impedance of reaction chamber 16 be complementary.The signal loading of the second matching network 8b after with impedance matching and then makes the energy in lower electrode power source 15 can be delivered to reaction chamber 16 to greatest extent to chuck 10.In reaction chamber 16; The second filter unit 9b is arranged between chuck 10 and the lower electrode power source 15; Resonant circuit through the second filter unit 9b can promptly carry out filtering to the signal from the upper electrode power source to carrying out filtering with the frequency of second power signal signal inequality.
The resonance frequency of the resonant circuit of the second filter unit 9b is:
The work of the above-mentioned second filter unit 9b is very little to the influence of the impedance matching scope of lower electrode power coalignment 13.As shown in Figure 9, the A ring of encirclement is the impedance matching scope of existing power match device, and the B ring of encirclement is the impedance matching scope of the lower electrode power coalignment 13 of the embodiment of the invention.From Fig. 7, can find out; The impedance matching scope of lower electrode power coalignment 13 of the present invention is compared with the impedance matching scope of existing coalignment; Basically identical promptly increases the impedance matching scope that the second filter cell 9b can not influence lower electrode power coalignment 13.Because the 26S Proteasome Structure and Function of upper electrode power coalignment 12 and lower electrode power coalignment 13 is all close; Correspondingly; The impedance matching scope of upper electrode power coalignment 12 is compared also basically identical with the impedance matching scope of existing power match device, promptly increases the impedance matching scope that the first filter cell 9a can not influence upper electrode power coalignment 12.
Compare to existing power match device with according to the filtering performance of the lower electrode power coalignment 13 of the semiconductor equipment 100 of the embodiment of the invention with reference to Figure 10 and Figure 11 below.
Figure 10 and Figure 11 are respectively the filtering performance sketch map of lower electrode power coalignment 13 of the semiconductor equipment 100 of the existing power match device and the embodiment of the invention.In Fig. 8 and Fig. 9, abscissa is the capacitance of the 3rd variable vacuum capacitance 1b, and unit is nF; Ordinate is decay, and unit is dB.
Shown in figure 10; Because in existing power match device; Not to filter function from the signal of other power sources; Being used for the lower electrode power coalignment with the power match device is example, because the signal that upper electrode power source 14 provides can generate an electromagnetic field in reaction chamber 16 through upper electrode power coalignment 12 and ICP coil 11, this electromagnetic field will further be loaded on the lower electrode power source 15 through chuck 10; Thereby cause coupling between ICP coil 11 and the lower electrode power source 15, and then damage lower electrode power source 15.Shown in figure 10, existing power match device can not satisfy less than-30dB in the decay of whole signal to the 2MHz frequency.And under normal conditions, require the isolation between the different frequency power supply need be greater than-30dB.
Shown in figure 11; In an embodiment of the present invention; Lower electrode power coalignment 13 is through the second filter unit 9b pair of filtering effect with the frequency of second power signal signal inequality; Upper electrode power source 14 is generated an electromagnetic field in reaction chamber 16 through upper electrode power coalignment 12 and ICP coil 11 can't be arrived on chuck 10 and the following power power-supply 15; And then the coil that can not cause use generates an electromagnetic field and the coupling of the electromagnetic field of other electrodes, has avoided burning of time power power-supply 15, thereby can make down power power-supply 15 operate as normal.Shown in figure 11; Lower electrode power coalignment 13 is that the attenuation degree of signal of 2MHz frequency is big to frequency in whole matching range; Have-the following decay of 50dB, it is the interference of the signal of 2MHz that the lower electrode power that can adequately protect source (13.56MHz power supply) and the second transducer 5b do not receive frequency.Because the 26S Proteasome Structure and Function of upper electrode power coalignment 12 and bottom electrode matching module 13 is all close, correspondingly, upper electrode power coalignment 12 also have filtering performance preferably with respect to existing power match device.Particularly, upper electrode power coalignment 12 is that the attenuation degree of signal of 13.56MHz is big to frequency in whole matching range, and filtering performance is good.
Shown in figure 12; In one embodiment of the invention; The bottom electrode first impedance matching unit 83 first end ground connection of the second matching network 8b; The second transducer 5b is respectively and between first end of second end of bottom electrode first impedance matching unit 83 and the second filter unit 9b, and second end of the second filter unit 9b links to each other with bottom electrode second impedance matching unit 84.The second filter unit 9b is between bottom electrode first impedance matching unit 83 and bottom electrode second impedance matching unit 84.Shown in figure 13, the second filter unit 9b comprises filter inductance L31 and the filter capacitor C31 that is connected with filter inductance L31, and filter capacitor C31 further is connected to public ground.Wherein, filter inductance L31 and filter capacitor C31 are parallel-connection structure.
In one embodiment of the invention, L31 can be 0.05 μ H, and C31 can be 2740pF.Port1 and Port2 are divided into two links of the second filter unit 9b.Shown in figure 14, the parameter and the annexation of the components and parts in bottom electrode first impedance matching unit 83 and bottom electrode second impedance matching unit 84 are constant.
Shown in figure 15; Correspondingly; The top electrode first impedance matching unit 81 first end ground connection of the first matching network 8a in the upper electrode power coalignment 12; First sensor 5a is respectively and between first end of second end of top electrode first impedance matching unit 81 and the second filter unit 9a, and second end of the first filter unit 9a links to each other with top electrode second impedance matching unit 82.Promptly the first filter unit 9a is between top electrode first impedance matching unit 81 and second impedance matching unit 82.
Shown in figure 16, the A1 ring of encirclement is the impedance matching scope of existing power match device, and the B1 ring of encirclement is the impedance matching scope of the lower electrode power coalignment 13 of the embodiment of the invention.From Figure 16, can find out; The impedance matching scope of the lower electrode power coalignment 13 among Figure 14 is compared with the impedance matching scope of existing power match device; Basically identical promptly increases the impedance matching scope that the second filter cell 9b can not influence lower electrode power coalignment 13.Because the 26S Proteasome Structure and Function of upper electrode power coalignment 12 and lower electrode power coalignment 13 is all close; Correspondingly; The impedance matching scope of upper electrode power coalignment 12 is compared also basically identical with the impedance matching scope of existing power match device, promptly increases the impedance matching scope that the first filter cell 9a can not influence upper electrode power coalignment 12.
With reference to Figure 10 and Figure 17 the filtering performance of the lower electrode power coalignment 13 among existing power match device and Figure 14 is compared below.
Figure 10 and Figure 17 are respectively the filtering performance sketch map of lower electrode power coalignment 13 of the semiconductor equipment 100 of the existing power match device and the embodiment of the invention.In Figure 10 and Figure 17, abscissa is the capacitance of the first variable vacuum capacitance C1, and unit is nF; Ordinate is decay, and unit is dB.
Shown in figure 10; Because in existing power match device; Not to filter function from the signal of other power sources; Being used for the lower electrode power coalignment with the power match device is example, because the signal that upper electrode power source 14 provides can generate an electromagnetic field in reaction chamber 16 through upper electrode power coalignment 12 and ICP coil 11, this electromagnetic field will further be loaded on the lower electrode power 15 through chuck 10; Thereby cause coupling between ICP coil 11 and the lower electrode power source 15, and then damage power power-supply 15 down.Shown in figure 10, existing power match device can not satisfy less than-30dB in the decay of whole signal to the 2MHz frequency.And under normal conditions, require the isolation between the different frequency power supply need be greater than-30dB.
Shown in figure 17; In an embodiment of the present invention; Lower electrode power coalignment 13 is through the second filter unit 9b pair of filtering effect with second power signal frequency signal inequality; Upper electrode power source 14 is generated an electromagnetic field in reaction chamber 16 through upper electrode power coalignment 12 and ICP coil 11 can't be arrived on chuck 10 and the following power power-supply 15; And then the coil that can not cause use generates an electromagnetic field and the coupling of the electromagnetic field of other electrodes, has avoided burning of time power power-supply 15, thereby can make down power power-supply 15 operate as normal.Shown in figure 17; The lower electrode power coalignment 13 of embodiment of the invention attenuation degree to the signal of 2MHz frequency in whole matching range is big; Have-the following decay of 50dB, it is the interference of the signal of 2MHz that the lower electrode power that can adequately protect source (13.56MHz power supply) and the second transducer 5b do not receive radio frequency.Because the 26S Proteasome Structure and Function of upper electrode power coalignment 12 and lower electrode power module 13 is all close, correspondingly, upper electrode power coalignment 12 also have filtering performance preferably with respect to existing power match device.Particularly, upper electrode power coalignment 12 attenuation degree to the signal of 13.56MHz frequency in whole matching range is big, and filtering performance is good.
In some embodiments of the invention, semiconductor equipment 100 further comprises adapter 19.As shown in Figure 4, shielding 19 is positioned at the side of reaction chamber 16, and links to each other with ICP coil 11.Adapter 19 can be adjusted the distance of chuck 10 and target 17.
To magnetically controlled sputter method according to an embodiment of the invention be described with reference to Figure 18 below.Shown in figure 18, magnetically controlled sputter method can comprise the steps:
S101: wafer is placed on the chuck relative with target;
In conjunction with shown in Figure 4,, wafer is placed on the chuck 10 in the inside of reaction chamber 16.Wherein chuck 10 can be oppositely arranged with target 17.Chuck 17 can be fixed and supporting wafers (Wafer).
S102: pulse signal is applied to target obtains metal ion target is carried out the metal ionization;
Apply pulse to target 17, so that target 17 sputter takes place and produces metal ion.
S103: controlling magnetic field is to be splashed to metal ion on the surface of wafer;
In reaction chamber 16, electromagnetic field is provided through ICP coil 11, thus the movement locus of control metal ion, and then metal ion is splashed on the surface of wafer.
S104: utilize the power match device that the output impedance of power match device and the input impedance of reaction chamber are mated.
Wherein, the power match device is the power match device of describing with reference to the foregoing description 120.
The RF energy that power source provides can constantly be gathered the power take-off current/voltage with the computing impedance adjustment amount by the transducer in the power match device from the input input of power match device.Matching network in the power match device through corresponding optimized Algorithm, is constantly adjusted the capacitance of variable vacuum capacitance according to the impedance adjustment amount, thereby makes the output impedance of power match device and the input impedance of reaction chamber be complementary.The signal loading of matching network after with impedance matching and then makes the energy of power source can be delivered to reaction chamber to greatest extent in reaction chamber.And, in order to make power source and power match device operate as normal, avoid the coupling of ICP coil 11 and electrode, the power match device is provided with filter unit between reaction chamber and power source.Resonant circuit through filter unit can be to carrying out filtering with power source frequency various signals.
When the power match device is positioned at the top electrode of semiconductor equipment, can be to carrying out filtering with the identical signal of signal frequency that the lower electrode power source provides.When the power match device is positioned at the bottom electrode of semiconductor equipment, can be to carrying out filtering with the identical signal of signal frequency that the upper electrode power source provides.
Magnetically controlled sputter method according to the embodiment of the invention; Can be through the power match device with target signal filter from other power sources; Make it can't arrive power source; And then the coil that can not cause use generates an electromagnetic field and the coupling of the electromagnetic field of other electrodes, has avoided burning of power source, thereby can make the power source operate as normal.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means the concrete characteristic, structure, material or the characteristics that combine this embodiment or example to describe and is contained at least one embodiment of the present invention or the example.In this manual, the schematic statement to above-mentioned term not necessarily refers to identical embodiment or example.And concrete characteristic, structure, material or the characteristics of description can combine with suitable manner in any one or more embodiment or example.
Although illustrated and described embodiments of the invention; For those of ordinary skill in the art; Can understand under the situation that does not break away from principle of the present invention and spirit and can carry out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is accompanying claims and be equal to and limit.
Claims (14)
1. a power match device that is used for semiconductor equipment is characterized in that, comprising:
Transducer, said transducer links to each other with the power source of said semiconductor equipment, is used to gather the signal from said power source, obtains the impedance adjustment amount; With
Matching network; Said matching network links to each other with said transducer; Be used for according to impedance adjustment amount from said transducer; The output impedance of adjusting said matching network is complementary with the input impedance with the reaction chamber of said semiconductor equipment, and is used for the signal frequency various signals of filtering and said power source.
2. power match device as claimed in claim 1 is characterized in that, said matching network comprises:
First impedance matching unit and second impedance matching unit; The first end ground connection of said first impedance matching unit; Said transducer is connected with second end of said first impedance matching unit and first end of said second impedance matching unit respectively, and said first impedance matching unit and second impedance matching unit are used for according to being complementary with the input impedance with the reaction chamber of said semiconductor equipment from the output impedance of the impedance adjustment amount of said transducer adjustment matching network; With
Filter unit, said filter unit links to each other with second end of said second impedance matching unit, is used for the signal frequency various signals of filtering and said power source.
3. power match device as claimed in claim 1 is characterized in that, said matching network comprises: first impedance matching unit, second impedance matching unit and filter unit,
The first end ground connection of said first impedance matching unit, said transducer link to each other with second end of said first impedance matching unit and first end of said filter unit respectively, and second end of said filter unit links to each other with said second impedance matching unit; Said first impedance matching unit and second impedance matching unit are used for according to being complementary with the input impedance with the reaction chamber of said semiconductor equipment from the output impedance of the impedance adjustment amount of said transducer adjustment matching network; Said filter unit is used for the signal frequency various signals of filtering and said power source.
4. like claim 2 or 3 described power match devices, it is characterized in that said filter unit is band pass filter, band stop filter, low pass filter or high pass filter.
5. a semiconductor equipment comprises reaction chamber, is arranged at the inner bracing or strutting arrangement of said reaction chamber, it is characterized in that, further comprises:
The upper electrode power source, said upper electrode power source is used to provide first power signal;
The lower electrode power source, said lower electrode power source is used to provide second power signal;
Wherein, the frequency of said first power signal is different with the frequency of second power signal,
The upper electrode power coalignment; Said upper electrode power coalignment is connected with said upper electrode power source; Be used for the output impedance of said upper electrode power coalignment and the input impedance of said reaction chamber are mated; And the frequency signal inequality that is used for the filtering and first power signal, said upper electrode power coalignment are each described power match device among the claim 1-4; With
The lower electrode power coalignment; Said lower electrode power coalignment is connected in said bracing or strutting arrangement; And be connected with said lower electrode power source; Be used for the output impedance of said lower electrode power coalignment and the input impedance of said reaction chamber are mated, and be used for the frequency signal inequality of the filtering and second power signal, said lower electrode power coalignment is each described power match device among the claim 1-4.
6. semiconductor equipment as claimed in claim 5 is characterized in that, said upper electrode power coalignment comprises:
First sensor, said first sensor links to each other with said upper electrode power source, is used to gather first power signal from said upper electrode power source, and obtains the impedance adjustment amount; With
First matching network; Said first matching network links to each other with said first sensor; Be used for according to impedance adjustment amount from said first sensor; The output impedance of adjusting said upper electrode power coalignment is complementary with the input impedance with said reaction chamber, and is used for the frequency signal inequality of the filtering and first power signal.
7. semiconductor equipment as claimed in claim 6 is characterized in that, said first matching network comprises:
Top electrode first impedance matching unit and top electrode second impedance matching unit; The first end ground connection of said first impedance matching unit; Said first sensor is connected with second end of said top electrode first impedance matching unit and first end of said top electrode second impedance matching unit respectively; Said top electrode first impedance matching unit and top electrode second impedance matching unit are used for according to the impedance adjustment amount from said first sensor, and the output impedance of adjusting said upper electrode power coalignment is complementary with the input impedance with said reaction chamber; With
First filter unit, said first filter unit links to each other with second end of said top electrode second impedance matching unit, is used for the frequency signal inequality of the filtering and first power signal.
8. semiconductor equipment as claimed in claim 6 is characterized in that, said first matching network comprises: top electrode first impedance matching unit, top electrode second impedance matching unit and first filter unit,
The first end ground connection of said top electrode first impedance matching unit; Said first sensor links to each other with second end of said top electrode first impedance matching unit and first end of said first filter unit respectively; Second end of said first filter unit links to each other with said top electrode second impedance matching unit
Said top electrode first impedance matching unit and top electrode second impedance matching unit are used for according to the impedance adjustment amount from said first sensor; The output impedance of adjusting said upper electrode power coalignment is complementary with the input impedance with said reaction chamber, and said first filter unit is used for the frequency signal inequality of the filtering and first power signal.
9. like claim 7 or 8 described semiconductor equipments, it is characterized in that said first filter unit is band pass filter, band stop filter, low pass filter or high pass filter.
10. semiconductor equipment as claimed in claim 5 is characterized in that, said lower electrode power coalignment comprises:
Second transducer, said second transducer links to each other with said lower electrode power source, is used to gather second power signal from said lower electrode power source, and obtains the impedance adjustment amount; With
Second matching network; Said second matching network links to each other with said second transducer; Be used for according to impedance adjustment amount from said second transducer; The output impedance of adjusting said lower electrode power coalignment is complementary with the input impedance with said reaction chamber, and is used for the frequency signal inequality of the filtering and second power signal.
11. semiconductor equipment as claimed in claim 10 is characterized in that, said second matching network also comprises:
Bottom electrode first impedance matching unit and bottom electrode second impedance matching unit; The first end ground connection of said bottom electrode first impedance matching unit; Said second transducer is connected with second end of said bottom electrode first impedance matching unit and first end of said bottom electrode second impedance matching unit respectively; Said bottom electrode first impedance matching unit and bottom electrode second impedance matching unit are used for according to the impedance adjustment amount from said second transducer, and the output impedance of adjusting said lower electrode power coalignment is complementary with the input impedance with said reaction chamber; With
Second filter unit, said second filter unit links to each other with second end of said bottom electrode second impedance matching unit, is used for the frequency signal inequality of the filtering and second power signal.
12. semiconductor equipment as claimed in claim 10 is characterized in that, said second matching network comprises: bottom electrode first impedance matching unit, bottom electrode second impedance matching unit and second filter unit,
The first end ground connection of said bottom electrode first impedance matching unit; Said second transducer is respectively and between first end of second end of said bottom electrode first impedance matching unit and said second filter unit; Second end of said second filter unit links to each other with said bottom electrode second impedance matching unit
Said bottom electrode first impedance matching unit and bottom electrode second impedance matching unit are used for according to the impedance adjustment amount from said second transducer; The output impedance of adjustment lower electrode power coalignment is complementary with the input impedance with said reaction chamber, and said second filter unit is used for the frequency signal inequality of the filtering and second power signal.
13., it is characterized in that second filter unit is band pass filter, band stop filter, low pass filter or high pass filter like claim 11 or 12 described semiconductor equipments.
14. semiconductor equipment as claimed in claim 5 is characterized in that, the frequency of said first power signal is lower than the frequency of said second power signal.
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Application publication date: 20120523 |