CN102468418A

CN102468418A - Vertical-structure LED (Light Emitting Diode) chip and manufacturing method thereof

Info

Publication number: CN102468418A
Application number: CN2010105500602A
Authority: CN
Inventors: 沈佳辉; 洪梓健
Original assignee: Rongchuang Energy Technology Co ltd; Zhanjing Technology Shenzhen Co Ltd
Current assignee: Rongchuang Energy Technology Co ltd; Zhanjing Technology Shenzhen Co Ltd
Priority date: 2010-11-18
Filing date: 2010-11-18
Publication date: 2012-05-23
Anticipated expiration: 2030-11-18
Also published as: CN102468418B

Abstract

The invention relates to a vertical-structure LED (Light Emitting Diode) chip, which comprises a conducting substrate and an epitaxial layer grown on the conducting substrate. A plurality of blind holes are arranged on the epitaxial layer, and a light condensing lens covers each blind hole. The manufacturing method of the vertical-structure LED chip comprises the following steps of: (1) arranging the epitaxial layer on the conducting substrate; (2) etching the epitaxial layer to form the plurality of blind holes; (3) covering the top of each blind hole by the light condensing lens. The light condensing lens covers the top of each blind hole of the vertical-structure LED chip, thus lights emitted from the top of each blind hole are condensed such that the light emitting efficiency of the vertical-structure LED chip is improved.

Description

Light emitting diode with vertical structure chip and manufacturing approach thereof

Technical field

The present invention relates to a kind of chip, be meant a kind of light emitting diode with vertical structure chip and manufacturing approach thereof especially.

Background technology

Light-emitting diode relies on its high light efficiency, low energy consumption, advantage such as pollution-free, has been applied among the increasing occasion, has much the trend that replaces conventional light source.

Light-emitting diode chip for backlight unit is as the part of core the most in the light-emitting diode, and the height of its luminous efficiency has directly determined the size of light-emitting diode output light flux.Yet still there are problems in existing light-emitting diode chip for backlight unit in design, badly influence the output brightness of whole light-emitting diode.Especially, because luminous mechanism, directly the light of self-luminous diode chip for backlight unit output basically all is unordered radial, and light can not be assembled effectively, thereby causes the brightness of light-emitting diode chip for backlight unit to be restricted.

Summary of the invention

The present invention aims to provide a kind of light emitting diode with vertical structure chip and manufacturing approach thereof that promotes luminous efficiency.

A kind of light emitting diode with vertical structure chip, it comprises electrically-conductive backing plate and grows in the epitaxial layer on the electrically-conductive backing plate, forms a plurality of blind holes on this epitaxial layer, each blind hole upper cover has collector lens.

A kind of manufacturing approach of light emitting diode with vertical structure chip comprises step:

1) epitaxial layer is set on electrically-conductive backing plate;

2) the etching epitaxial layer forms a plurality of blind holes;

3) each blind hole top closure collector lens.

Collector lens has been placed at the blind hole top of above-mentioned light emitting diode with vertical structure chip, will be assembled by the light of blind hole top outgoing, has improved the luminous efficiency of light emitting diode with vertical structure chip.

With reference to the accompanying drawings, in conjunction with specific embodiment the present invention is done further description.

Description of drawings

Fig. 1 is the vertical view of the light emitting diode with vertical structure chip of one embodiment of the invention, does not wherein place lens on some blind hole.

Fig. 2 is the profile of light emitting diode with vertical structure chip shown in Figure 1 II-II along the line.

Fig. 3 is the flow process of the light emitting diode with vertical structure chip of manufacturing one embodiment of the invention.

The main element symbol description

Electrically-conductive backing plate 10

Epitaxial layer 20

P type semiconductor layer 21

Semiconductor excitation layer 23

N type semiconductor layer 25

Electrode 30

Blind hole 40

Lens 50

Embodiment

Fig. 1 and Fig. 2 show the light emitting diode with vertical structure chip of one embodiment of the invention.This light emitting diode with vertical structure chip comprises that the epitaxial layer 20 and that an electrically-conductive backing plate 10, is stacked in electrically-conductive backing plate 10 upper surfaces is arranged at the electrode 30 on the epitaxial layer.Offer the blind hole 40 of some spaces on this epitaxial layer 20.Lens 50 are placed at the top of each blind hole 40.

Said epitaxial layer 20 comprises a p type semiconductor layer 21, semiconductor excitation layer 23 and a n type semiconductor layer 25 that stacks gradually in electrically-conductive backing plate 10 upper surfaces.P type semiconductor layer 21 and n type semiconductor layer 25 are used to the electrons/ that provides mobile, make electronics and cavity energy combining between the semiconductor excitation layer 23 between p type semiconductor layer 21 and the n type semiconductor layer 25 to around give off photon.In the present embodiment, n type semiconductor layer 25 can be the n type gallium nitride layer, and p type semiconductor layer 21 is a P type gallium nitride layer, and semiconductor excitation layer 23 can be single quantum well or multiple quantum well layer.

Said electrically-conductive backing plate 10 can be made by gallium nitride (GaN) substrate, carborundum (SiC), silicon (Si), copper (Cu), tungsten copper conductive material such as (CuW).This electrically-conductive backing plate 10 can be the electrically-conductive backing plate that direct growth has epitaxial layer 20, also can be former insulation growth substrate and the new electrically-conductive backing plate of bonding again of removing light-emitting diode chip for backlight unit through etching.

Said electrode 30 is formed at the outer peripheral edges of said epitaxial layer 20.This electrode 30 ringwise.In other embodiments, this electrode 30 can be arranged on other positions of epitaxial layer 20, and is other shapes, and for example, electrode 30 is at the middle part of epitaxial layer 20, and is square.

In the present embodiment, said blind hole 40 is opened in the peripheral part of said epitaxial layer 20, forms the blind hole array.Said electrode 30 is around these blind holes 40.These blind holes 40 and electrode 30 near.Blind hole 40 is not offered at the middle part of this epitaxial layer 20, and to form main luminous zone, epitaxial layer 20 peripheral parts form less important luminous zone.This blind hole 40 extends to p type semiconductor layer 21 places by the end face of epitaxial layer 20.In the present embodiment, the bottom surface of blind hole 40 extends to the downward certain distance of p type semiconductor layer 21 end faces, but does not extend to the bottom surface of p type semiconductor layer 21.In other embodiments, blind hole 40 can directly extend to the bottom surface of p type semiconductor layer 21.In the present embodiment, blind hole 40 is a circular hole, and in other embodiments, blind hole 40 can be the hole of other shapes such as square hole.

Be appreciated that ground,, can between electrically-conductive backing plate 10 and p type semiconductor layer 21, form the layer of metal reflector in order to increase the light extraction efficiency of light emitting diode with vertical structure chip.

The top of said each blind hole 40 of lens 50 cappings, as shown in Figure 2 to being assembled by the light of this blind hole 40 places outgoing, the light that lens 50 send epitaxial layer 20 side direction at blind hole 40 places is assembled.The top of each lens 50 raises up, and the bottom is attached on the epitaxial layer 20 around the corresponding blind hole 40.In the present embodiment, lens 50 roughly are the flat column structure of top bump, and in other embodiments, lens 50 can be other structures, as long as can converging light.In the present embodiment, abut against together between the adjacent lens 50, carry out optically focused with the light that less important luminous zone is sent.

Fig. 3 shows the method for making light emitting diode with vertical structure chip of the present invention, comprises the steps:

1) insulated substrate is provided, growth epitaxial layer 20 on this insulated substrate, this epitaxial layer 20 is included in grow successively on the insulated substrate n type semiconductor layer 25, semiconductor excitation layer 23 and p type semiconductor layer 21;

2) utilize plating or wafer bond techniques that electrically-conductive backing plate 10 is combined with the p type semiconductor layer 21 of epitaxial layer 20;

3) utilize dry-etching or Wet-type etching (for example, laser lift-off technique) that insulated substrate is separated with n type semiconductor layer 25;

4) periphery of etching epitaxial layer 20 forms a plurality of blind holes 40, and these blind holes 40 are formed a blind hole array;

5) at each blind hole top closure one lens 50;

6) the periphery vapor deposition at epitaxial layer 20 forms annular electrode 30.

In step 4), can utilize the gold-tinted developing technique on n type semiconductor layer 25, to form a patterning photoresist layer, and according to this patterning photoresist layer etching epitaxial layer 20, be positioned at the blind hole array of epitaxial layer 20 peripheries with formation, remove the patterning photoresist layer then.

Be appreciated that ground, said electrode 30 can be formed at the middle part of epitaxial layer 20, and said blind hole 40 is around this electrode 30.

Collector lens 50 has been placed at blind hole 40 tops of above-mentioned light emitting diode with vertical structure chip, will be assembled by the light of blind hole top outgoing, has improved the luminous efficiency of light-emitting diode chip for backlight unit.

Claims

1. light emitting diode with vertical structure chip, it comprises electrically-conductive backing plate and grow in the epitaxial layer on the electrically-conductive backing plate, it is characterized in that: form a plurality of blind holes on this epitaxial layer, each blind hole upper cover has collector lens.

2. light emitting diode with vertical structure chip as claimed in claim 1; It is characterized in that: said epitaxial layer comprises a main luminous zone and is arranged on the less important luminous zone of main luminous zone periphery, and said blind hole equably, the compartment of terrain is arranged in the said less important luminous zone.

3. according to claim 1 or claim 2 light emitting diode with vertical structure chip, it is characterized in that: the top of said collector lens raises up, and the bottom is attached on the epitaxial layer around the corresponding blind hole.

4. light emitting diode with vertical structure chip as claimed in claim 3 is characterized in that: said collector lens on said epitaxial layer each other against.

5. light emitting diode with vertical structure chip as claimed in claim 3 is characterized in that: also comprise the electrode that is arranged on the said epitaxial layer, this electrode retaining collar is around said blind hole.

6. light emitting diode with vertical structure chip as claimed in claim 3; It is characterized in that: said epitaxial layer comprises p type semiconductor layer, semiconductor excitation layer and a n type semiconductor layer that grows in successively on the said electrically-conductive backing plate, and said blind hole extends to p type semiconductor layer by the n type semiconductor layer of epitaxial layer.

7. the manufacturing approach of a light emitting diode with vertical structure chip comprises step:

1) epitaxial layer is set on electrically-conductive backing plate;

2) the etching epitaxial layer forms a plurality of blind holes;

3) each blind hole top closure collector lens.

8. the manufacturing approach of light emitting diode with vertical structure chip as claimed in claim 7 is characterized in that: also be included in the step that the epitaxial layer vapor deposition forms electrode.

9. like the manufacturing approach of claim 7 or 8 described light emitting diode with vertical structure chips; It is characterized in that: comprise also that in step 1) step a) provides an insulated substrate; Grow successively on the insulated substrate epitaxial layer, i.e. n type semiconductor layer, semiconductor excitation layer and p type semiconductor layer; Step b) combines an electrically-conductive backing plate on p type semiconductor layer; Insulated substrate is removed in the step c) etching.

10. the manufacturing approach of light emitting diode with vertical structure chip as claimed in claim 9 is characterized in that: the top of said collector lens raises up, and the bottom is attached on the epitaxial layer around the corresponding blind hole.