CN102467988A - A nickel powder coated by sulfur, a paste for inner electrode, a laminated ceramic electronic parts by using the same and a process thereof - Google Patents
A nickel powder coated by sulfur, a paste for inner electrode, a laminated ceramic electronic parts by using the same and a process thereof Download PDFInfo
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- CN102467988A CN102467988A CN2011100622538A CN201110062253A CN102467988A CN 102467988 A CN102467988 A CN 102467988A CN 2011100622538 A CN2011100622538 A CN 2011100622538A CN 201110062253 A CN201110062253 A CN 201110062253A CN 102467988 A CN102467988 A CN 102467988A
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- sulphur
- metal dust
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- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 title claims abstract description 60
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000000919 ceramic Substances 0.000 title claims abstract description 34
- 229910052717 sulfur Inorganic materials 0.000 title abstract 7
- 239000011593 sulfur Substances 0.000 title abstract 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 114
- 239000002184 metal Substances 0.000 claims abstract description 114
- 239000002243 precursor Substances 0.000 claims abstract description 31
- 239000000843 powder Substances 0.000 claims abstract description 24
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 239000005864 Sulphur Substances 0.000 claims description 81
- 239000000428 dust Substances 0.000 claims description 78
- -1 Sulphur compound Chemical class 0.000 claims description 28
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 229910052759 nickel Inorganic materials 0.000 claims description 20
- 230000008602 contraction Effects 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 9
- 239000006071 cream Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 4
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 abstract description 7
- 230000005764 inhibitory process Effects 0.000 abstract description 2
- 150000003464 sulfur compounds Chemical class 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 description 5
- 238000010304 firing Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000012258 stirred mixture Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/14—Making metallic powder or suspensions thereof using physical processes using electric discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2202/00—Treatment under specific physical conditions
- B22F2202/13—Use of plasma
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/15—Nickel or cobalt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Capacitors (AREA)
- Powder Metallurgy (AREA)
- Conductive Materials (AREA)
Abstract
The invention relates to a nickel powder coated by sulfur, a paste for inner electrode, a laminated ceramic electronic part by using the same and a process thereof. The method of preparing the nickel powder coated by sulfur includes steps of mixing the sulfur compound with metal powder; preparing sulfur-metal precursor by the mixture; reacting the sulfur-metal precursor in high temperature to coat the sulfur on the metal. In the nickel powder coated by sulfur, the retraction inhibition is guaranteed. The nickel powder coated by sulfur can be prepared as particles and the content of the sulfur can be controlled easily, thereby guaranteeing the uniformity.
Description
The cross reference of related application
The application requires the priority of on November 8th, 2010 at the korean patent application 10-2010-0110580 of Korean Patent office submission, through reference its disclosure is incorporated among this paper.
Technical field
The present invention relates to the laminated ceramic electronic unit that a kind of use is coated with the metal dust of sulphur, more particularly, relate to a kind of contraction inhibition and inhomogeneity laminated ceramic electronic unit of guaranteeing the metal dust granularity.
Background technology
Usually, the laminated ceramic electronic unit is installed on the printed substrate of various electronic products such as mobile communication terminal, notebook computer, PC, palmtop PC (PDA) etc., and according to using and capacity, it has various sizes and lamination shape.
Recently, generally speaking, the conductive powder of conductor paste that is used for the interior electrode of laminated ceramic electronic unit mainly uses base metal powder such as nickel, and copper waits and replaces noble metal powder such as palladium, silver etc.
Recently, owing to especially need have small size and jumbo laminated ceramic electronic unit, so need have the conductive powder of small nickel particles.Small nickel particles is highly active and has low-down sintering initial temperature.
Because small nickel by powder begins to shrink because of the redox reaction of nickel at low temperatures during firing; So improved the poor of shrinkage between ceramic layer and the nickel by powder electrode layer rapidly; Thereby cause such as layering, the fault of construction of breaking etc., and reduced the reliability of electronic unit.
Summary of the invention
It is a kind of through preparation sulphur-method of the metal dust that metal precursor manufacturing sulphur encapsulates and the laminated ceramic electronic unit that uses it that one side of the present invention provides, and the metal dust that said sulphur encapsulates has guaranteed to shrink the uniformity that delays with the metal dust granularity.
According to one side of the present invention, a kind of method of making the metal dust that sulphur encapsulates is provided, said method comprises: sulphur compound is mixed with metal dust; Prepare sulphur-metal precursor by mixture; And said sulphur is coated on the said metal through at high temperature making the reaction of said sulphur-metal precursor.
Said metal can be to be selected from least a in silver (Ag), plumbous (Pb), platinum (Pt), nickel (Ni) and the copper (Cu).
Can be through after said sulphur compound being dissolved in the pure water, adding and stirring said metal dust, carry out mixing of said sulphur compound and said metal dust.
Can carry out the preparation of said sulphur-metal precursor through under low pressure from said mixture, removing to desolvate.
Said sulphur compound can be an ammonium sulfate.
Can carry out said stirring and can remove said solvent through using mechanical agitator through rotary evaporator.
Can in plasma reactor, carry out the reaction of said precursor under the high temperature.
Said plasma reactor can be the radio frequency plasma reactor.
According to another aspect of the present invention, a kind of metal dust that is encapsulated by the sulphur of said method manufacturing is provided.
The thickness of the sulphur that encapsulates on the said metal dust can be for below the 10nm, and the contraction initial temperature of said metal dust can be higher more than 100 ℃ than the contraction initial temperature of the metal dust before encapsulating.
According to another aspect of the present invention, a kind of interior paste for use in electrode cream that comprises the metal dust that said sulphur encapsulates is provided.
According to another aspect of the present invention, the laminated ceramic electronic unit is provided, it comprises inner electrode layer and the dielectric layer that contains the metal dust that comprises that said sulphur encapsulates.
According to another aspect of the present invention, a kind of method that is used to make the laminated ceramic electronic unit is provided, said method comprises: sulphur compound is mixed with metal dust; Prepare sulphur-metal precursor by mixture; Through being reacted, said sulphur-metal precursor prepares the metal dust that sulphur encapsulates; Preparation contains the interior paste for use in electrode cream of the metal dust that said sulphur encapsulates; In a plurality of raw cooks (green sheet), form inner electrode layer by said paste; Through being carried out lamination, the said raw cook that is formed by said inner electrode layer forms layered product; Through said layered product being compressed and cutting and make living chip (green chip); And, said living chip makes ceramic sintered bodies through being fired.
Description of drawings
From the following detailed description of carrying out together with accompanying drawing, will more clearly understand above-mentioned and others, characteristic and other advantage of the present invention.Wherein:
Fig. 1 is the flow chart that the method for the metal dust that encapsulates according to exemplary manufacturing sulphur of the present invention is described.
Fig. 2 A and 2B are the SEM figure of the nickel by powder before and after the sulphur of another exemplary embodiment of the present invention encapsulates.
Fig. 3 is the figure of the contraction initial temperature of the nickel by powder before and after the sulphur of another exemplary embodiment of explanation the present invention encapsulates.
Fig. 4 is the method for laminated ceramic electronic unit is made in explanation according to another exemplary of the present invention a flow chart.
Fig. 5 is the perspective view of the laminated ceramic compacitor of another exemplary of explanation the present invention.
Fig. 6 is the sectional view that the line A-A ' along Fig. 5 is got.
Embodiment
Can exemplary embodiment of the present invention be revised as various forms, and scope of the present invention is not limited to the following exemplary embodiment that will describe.And, exemplary embodiment of the present invention is provided, thereby has made those skilled in the art can more fully understand the present invention.
Below with reference to accompanying drawing exemplary embodiment of the present invention is elaborated.
Fig. 1 is the flow chart that the method for the metal dust that encapsulates according to exemplary manufacturing sulphur of the present invention is described.
With reference to figure 1, the method for making the metal dust that sulphur encapsulates according to exemplary embodiment of the present invention comprises: sulphur compound is mixed with metal dust; Prepare sulphur-metal precursor by mixture; And at high temperature make said precursors reaction.
At first, in order to form the metal dust that sulphur encapsulates, sulphur compound is mixed (S1) with metal dust.
Add then in the pure water and stir metal dust through sulphur compound is dissolved in, carry out mixing of said sulphur compound and said metal dust.
Use the mixture of sulphur compound and metal dust to prepare sulphur-metal precursor (S2).
Carry out the preparation of sulphur-metal precursor through under low pressure from mixture, removing to desolvate.
In this case; Said metal can be by precious metal material like silver (Ag), plumbous (Pb), platinum etc., and a kind of the processing in nickel (Ni) and the copper (Cu) perhaps makes through mixing its two kinds of materials at least; But be not limited to this especially, as long as it can be used as interior electrode paste.
In the method for the metal dust that encapsulates according to exemplary embodiment manufacturing sulphur of the present invention, can ammonium sulfate be used as sulphur compound, but be not limited to this.
Usually can come the sulphur compound and the metal dust that are dissolved in the pure water are stirred through mechanical agitator, and the not special restriction of said blender.
Through in rotary evaporator, adding and the rotation mixture comes evaporating solvent and from stirred mixture, removes and desolvate, thereby make sulphur-metal precursor that the mixture by sulphur compound and metal dust forms.
Next, sulphur-metal precursor (S3) of making of reaction at high temperature and make the metal dust (S4) that sulphur encapsulates.
In this case, carry out the reaction of sulphur-metal precursor, thereby make the metal dust that sulphur encapsulates through the high-temperature plasma precursor reactant in plasma reactor.
Said plasma reactor is radio frequency (RF) plasma reactor.When being added into sulphur-metal precursor in the reactor, the lip-deep sulphur compound of evaporated metal in plasma reactor.
Afterwards, sulphur compound is concentrated, particle growth (particle-grown) sulphur-metal precursor is with synthetic minute metallic powder then.
At length, with sulphur-metal precursor provide to plasma reactor torch (torch) and with it through high-temperature area, thereby before getting into quick cooling segment the growth response thing.
In plasma reactor, accomplish after the reaction, made the metal dust that sulphur encapsulates (S4) through in gatherer, collecting.
In correlation technique, in plasma reactor, make the metal dust that sulphur encapsulates through following steps: through the synthetic metal dust of direct current plasma, metal dust is added in the plasma reactor, and simultaneously to wherein adding the gas phase sulfur compound.
Yet; In correlation technique; Owing to respectively metal dust and sulphur compound are added in the plasma reactor; So owing to other inert gas in the injected plasma reactor makes sulphur be coated on the metal dust unevenly, thereby making to be difficult to improve shrinks initial temperature and is difficult to make the even metal powder.
According to the exemplary embodiment of the invention described above, owing to make sulphur-metal precursor through before the reaction in plasma reactor sulphur compound and metal dust being mixed, so can sulphur compound be coated on the metal dust equably.
As a result, in the metal dust that the sulphur according to exemplary embodiment manufacturing of the present invention encapsulates, because sulphur compound is coated on the surface of metallic equably and has suppressed the combination of other material, so can improve the contraction initial temperature effectively.
In addition, although have granularly according to the metal dust of correlation technique manufacturing, can the metal dust of exemplary embodiment of the present invention easily be processed the particle and the content of the sulphur of controlling packet quilt easily, thereby guarantee uniformity effectively.
Another exemplary embodiment of the present invention provides a kind of metal dust that is encapsulated by the sulphur of said method manufacturing.
The thickness of the sulphur that encapsulates on the metal dust can be below the 10nm, and the contraction initial temperature of said metal dust can be higher more than 100 ℃ than the contraction initial temperature of the metal dust before encapsulating.
Usually, minute metallic powder, particularly nickel by powder begin sintering and contraction under the low temperature below 400 ℃, but the sintering initial temperature of the ceramic particle of formation potsherd is far above the sintering initial temperature of metal dust.
Therefore; According to exemplary embodiment of the present invention; Because the contraction initial temperature of the metal dust that encapsulates of sulphur can be higher more than 100 ℃ than the contraction initial temperature of the metal dust before encapsulating, so suppressed the layering of ceramic component after firing effectively and break.
Fig. 2 A and 2B are the SEM figure of the nickel by powder before and after the sulphur of exemplary embodiment of the present invention encapsulates.
Fig. 2 A does not have sulphur to encapsulate the electron micrograph image of the nickel by powder of layer, and accompanying drawing 2B utilizes sulphur to encapsulate layer electron micrograph image of the nickel by powder that evenly encapsulates.
The thickness of the sulphur that encapsulates on the metal dust can be for below the average 10nm, shown in Fig. 2 B.
Fig. 3 is the figure of the contraction initial temperature of the nickel by powder before and after the sulphur of another exemplary of explanation the present invention encapsulates.
Fig. 3 shows the hot analysis result of nickel by powder before and after encapsulating with the form of chart and suppresses effect with the contraction of the powder observing sulphur and encapsulate.
As shown in Figure 3, susceptible of proof, the contraction initial temperature of the metal dust after encapsulating is higher more than 100 ℃ than the contraction initial temperature of the metal dust before encapsulating.
Simultaneously, the laminated ceramic electronic unit that this exemplary embodiment provides a kind of interior paste for use in electrode cream and used said paste, said paste comprises the metal dust that sulphur encapsulates.
Fig. 4 is the method for laminated ceramic electronic unit is made in explanation according to another exemplary of the present invention a flow chart.
Fig. 5 is the perspective view of the laminated ceramic compacitor of another exemplary of explanation the present invention.
Fig. 6 is the sectional view that the line A-A ' along Fig. 5 is got.
With reference to accompanying drawing 4 and 6, the method for the manufacturing laminated ceramic electronic unit of another exemplary embodiment of the present invention comprises: sulphur compound is mixed with metal dust; Prepare sulphur-metal precursor by said mixture; Through at high temperature making said sulphur-metal precursor reaction prepare the metal dust that sulphur encapsulates; Preparation contains the interior paste for use in electrode cream of the metal dust that said sulphur encapsulates; In a plurality of raw cooks, form inner electrode layer by said paste; Carry out lamination through raw cook and form layered product said inner electrode layer; Through said layered product being compressed and cutting and make living chip; And, said living chip makes ceramic component through being fired.
At first, prepared the metal dust (S1 to S4) that the sulphur according to exemplary embodiment manufacturing of the present invention encapsulates.
Can make the metal dust that sulphur encapsulates through the method identical with the exemplary embodiment of Fig. 1.
Next, prepare the paste that is used to form electrode through the metal dust that uses sulphur to encapsulate.(S5)。
Except the metal dust that the sulphur according to the exemplary embodiment manufacturing of Fig. 1 encapsulates, also made the paste that is used to form electrode through general manufacturing approach.
Afterwards, the paste that is used to form electrode through use is made the laminated ceramic electronic unit, and carries out manufacture process through the general manufacturing approach that is described below.Especially, will method that make laminated ceramic compacitor be described.
At first, prepare a plurality of raw cooks.In order to prepare said raw cook, ceramic green sheet is through will be such as barium titanate (BaTiO
3) powder and ceramic additive, organic solvent, plasticizer, adhesive and dispersant and mixture carried out basket grinding and forms slurry; And said slurry is coated on the counterdie, be dried to then and have several microns thickness and form dielectric layer 111.
In addition, on raw cook, the paste that is used to form electrode is distributed, on a side direction, move squeegee, and form inner electrode layer 130a and 130b (S6) through conductive paste.
As stated, after forming inner electrode layer 130a and 130b, raw cook is separated from counterdie, and a plurality of raw cooks of lamination are to form layered product.
Subsequently, after under HTHP, the layered product of raw cook being compressed, the layered product of compression is cut into preliminary dimension, gives birth to chip (S7) thereby make through cutting technique.
Afterwards, carry out plasticising, sintering, grinding with manufacturing ceramic sintered bodies 110 to giving birth to chip, and form external electrode 120a and 120b therein, carry out electroplating technology immediately, thereby accomplish the lamination ceramic electronic components, especially, laminated ceramic compacitor 100 (S8).
Therefore; According to this exemplary embodiment of the present invention; Formed inner electrode layer owing to contain the interior paste for use in electrode cream of the metal dust that sulphur encapsulates through use; So improved more than 100 ℃ will shrinking initial temperature during whole the firing, thereby made and suppressed in the layering of firing the back ceramic component effectively and break.
As stated; Make in the method for laminated ceramic electronic unit at the nickel by powder that encapsulates through use sulphur according to exemplary embodiment of the present invention; Guaranteed to shrink and suppressed; Can be easily with the prepare nickel by powder of particle and the content of the sulphur of controlling packet quilt easily, thereby guarantee uniformity.
Although the present invention is shown and explains together with exemplary embodiment; But for a person skilled in the art; Under the situation that does not deviate from the purport of the present invention that limits appended claims and scope, can make amendment and change.Therefore, scope of the present invention will be confirmed by appended claims.
Claims (23)
1. method of making the metal dust that sulphur encapsulates, said method comprises:
Sulphur compound is mixed with metal dust;
Prepare sulphur-metal precursor by mixture; And
Through at high temperature making said sulphur-metal precursor reaction said sulphur is coated on the said metal.
2. the process of claim 1 wherein that said metal is for being selected from least a in silver (Ag), plumbous (Pb), platinum (Pt), nickel (Ni) and the copper (Cu).
3. the process of claim 1 wherein through after said sulphur compound being dissolved in the pure water, adding and stirring said metal dust, carry out mixing of said sulphur compound and said metal dust.
4. the process of claim 1 wherein and carry out the preparation of said sulphur-metal precursor through under low pressure from said mixture, removing to desolvate.
5. the process of claim 1 wherein that said sulphur compound is an ammonium sulfate.
6. the method for claim 3 is wherein carried out said stirring through the use mechanical agitator.
7. the method for claim 4 is wherein removed said solvent through rotary evaporator.
8. the process of claim 1 wherein the reaction of in plasma reactor, carrying out said precursor under the high temperature.
9. the method for claim 8, wherein said plasma reactor is the radio frequency plasma reactor.
10. the metal dust that encapsulates of the sulphur through each method manufacturing in the claim 1～9.
11. the powder of claim 10, the thickness of the sulphur that encapsulates on the wherein said metal dust are below the 10nm.
12. the powder of claim 10, the contraction initial temperature of wherein said metal dust is higher more than 100 ℃ than the contraction initial temperature of the metal dust before encapsulating.
13. paste for use in electrode cream in one kind, it comprises the metal dust that the sulphur through each method manufacturing in the claim 1～9 encapsulates.
14. a laminated ceramic electronic unit, it comprises:
Inner electrode layer, it contains the metal dust that the sulphur through each method manufacturing in the claim 1～9 encapsulates; With
Dielectric layer.
15. a method of making the laminated ceramic electronic unit, said method comprises:
Sulphur compound is mixed with metal dust;
Prepare sulphur-metal precursor by mixture;
Through being reacted, said sulphur-metal precursor prepares the metal dust that sulphur encapsulates;
Preparation contains the interior paste for use in electrode cream of the metal dust that said sulphur encapsulates;
In a plurality of raw cooks, form the inner electrode layer of said paste;
Through being carried out lamination, the said raw cook that is formed by said inner electrode layer forms layered product;
Through said layered product being compressed and cutting and make living chip; And
Through being fired, said living chip makes ceramic sintered bodies.
16. the method for claim 15, wherein said metal are to be selected from least a in silver (Ag), plumbous (Pb), platinum (Pt), nickel (Ni) and the copper (Cu).
17. the method for claim 15 wherein through after said sulphur compound being dissolved in the pure water, adding and stirring said metal dust, is carried out mixing of said sulphur compound and said metal dust.
18. the method for claim 15 is wherein carried out the preparation of said sulphur-metal precursor through under low pressure from said mixture, removing to desolvate.
19. the method for claim 15, wherein said sulphur compound is an ammonium sulfate.
20. the method for claim 17 is wherein carried out said stirring through mechanical agitator.
21. the method for claim 18 is wherein removed said solvent through rotary evaporator.
22. the method for claim 15 is wherein carried out the reaction of said precursor under the high temperature in plasma reactor.
23. the method for claim 22, wherein said plasma reactor are the radio frequency plasma reactors.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100110580A KR20120049026A (en) | 2010-11-08 | 2010-11-08 | A nickel powder coated by sulfur, a paste for inner electrode, a laminated ceramic electronic parts by using the same and a process thereof |
| KR10-2010-0110580 | 2010-11-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102467988A true CN102467988A (en) | 2012-05-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100622538A Pending CN102467988A (en) | 2010-11-08 | 2011-03-11 | A nickel powder coated by sulfur, a paste for inner electrode, a laminated ceramic electronic parts by using the same and a process thereof |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20120049026A (en) |
| CN (1) | CN102467988A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102950280A (en) * | 2012-10-11 | 2013-03-06 | 宁波广博纳米新材料股份有限公司 | Treatment method of nano nickel powder for sulfur-containing multi-layer ceramic chip capacitor |
| CN104889385A (en) * | 2014-03-07 | 2015-09-09 | 住友金属矿山株式会社 | Nickel powder |
| CN105702322A (en) * | 2014-12-11 | 2016-06-22 | 株式会社村田制作所 | Conductive paste and ceramic electronic member |
| CN112423912A (en) * | 2018-06-28 | 2021-02-26 | 东邦钛株式会社 | Metal powder, method for producing same, and method for predicting sintering temperature |
| CN115188590A (en) * | 2018-01-30 | 2022-10-14 | 泰科纳等离子系统有限公司 | Metal powder for use as electrode material in multilayer ceramic capacitors and methods of making and using the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004244654A (en) * | 2003-02-12 | 2004-09-02 | Sumitomo Metal Mining Co Ltd | Nickel powder with excellent sinterability, and its production method |
| JP2007191771A (en) * | 2006-01-20 | 2007-08-02 | Sakai Chem Ind Co Ltd | Method for producing nickel fine particle |
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2010
- 2010-11-08 KR KR1020100110580A patent/KR20120049026A/en active Search and Examination
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- 2011-03-11 CN CN2011100622538A patent/CN102467988A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004244654A (en) * | 2003-02-12 | 2004-09-02 | Sumitomo Metal Mining Co Ltd | Nickel powder with excellent sinterability, and its production method |
| JP2007191771A (en) * | 2006-01-20 | 2007-08-02 | Sakai Chem Ind Co Ltd | Method for producing nickel fine particle |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102950280A (en) * | 2012-10-11 | 2013-03-06 | 宁波广博纳米新材料股份有限公司 | Treatment method of nano nickel powder for sulfur-containing multi-layer ceramic chip capacitor |
| CN104889385A (en) * | 2014-03-07 | 2015-09-09 | 住友金属矿山株式会社 | Nickel powder |
| CN104889385B (en) * | 2014-03-07 | 2018-07-06 | 住友金属矿山株式会社 | Nickel powder |
| CN105702322A (en) * | 2014-12-11 | 2016-06-22 | 株式会社村田制作所 | Conductive paste and ceramic electronic member |
| CN115188590A (en) * | 2018-01-30 | 2022-10-14 | 泰科纳等离子系统有限公司 | Metal powder for use as electrode material in multilayer ceramic capacitors and methods of making and using the same |
| CN112423912A (en) * | 2018-06-28 | 2021-02-26 | 东邦钛株式会社 | Metal powder, method for producing same, and method for predicting sintering temperature |
| CN112423912B (en) * | 2018-06-28 | 2023-05-23 | 东邦钛株式会社 | Metal powder, method for producing same, and method for predicting sintering temperature |
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| Publication number | Publication date |
|---|---|
| KR20120049026A (en) | 2012-05-16 |
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