CN102466981B - Method for testing linewidth uniformity - Google Patents
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- CN102466981B CN102466981B CN 201010545764 CN201010545764A CN102466981B CN 102466981 B CN102466981 B CN 102466981B CN 201010545764 CN201010545764 CN 201010545764 CN 201010545764 A CN201010545764 A CN 201010545764A CN 102466981 B CN102466981 B CN 102466981B
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Abstract
The invention relates a method for testing linewidth uniformity. The method comprises the following steps of 1, preparing k linewidth testing figures of which desired values are linewidth design values on a lithographic plate, 2, testing linewidth actual values of all the k linewidth testing figures on the lithographic plate, 3, calculating k differences between the linewidth actual values of the k linewidth testing figures and the corresponding desired values, 4, carrying out photoetching of the k linewidth testing figures on a disk, 5, testing linewidth real values of the k linewidth testing figures on the disk, 6, calculating mask error enhancement factor (MEEF) verification values according to the desired values or the linewidth actual values as linewidth values of the k linewidth testing figures, and the linewidth real values, 7, respectively calculating the product of the k differences and the MEEF verification values so that k corresponding compensation values are obtained, and 8, calculating the sum of the linewidth real values of the k linewidth testing figures and the k corresponding compensation values so that k linewidth final values are obtained, wherein the k linewidth final values are utilized as linewidth uniformity evaluation data. The method provided by the invention has the advantage that plate making error compensation values are obtained by MEEF verification value calculation so that a plate making error is avoided.
Description
[technical field]
The present invention relates to semiconductor technology, relate in particular to the inhomogeneity method of testing of a kind of live width for photoetching machine lens performance evaluation.
[background technology]
Single imaging region after the reticle figure exposes by photoetching machine lens on disk is called a shot, live width homogeneity on disk in each shot is an important parameter of photoetching process, live width homogeneity when especially shot size can be utilized scope for the photoetching machine lens maximum is estimated a key index of litho machine especially.
Traditional evaluation method is to repeat to place some live width resolution charts on reticle, and test live width after exposure on disk obtains the live width homogeneity performance of (within shot, WIS) in shot.Fig. 1 is traditional inhomogeneity method of testing process flow diagram of live width.Comprise the following steps: S110, the resolution chart of the different live widths of formation on reticle, every kind of live width all will form a plurality of identical repetitive patterns.S120, with the photoetching machine lens maximum can utilize size with the resolution chart photoetching on reticle to disk.S130, WIS live width homogeneity on the test disk is to estimate the performance of litho machine.
Traditional evaluation method is significant for the quality monitoring of actual product, but really can't estimate photoetching machine lens itself.This is because in the making reticle, when transferring to resolution chart on reticle, every kind of live width all will form a plurality of repetitive patterns.But the impact due to the reticle manufacture craft, on final reticle, the live width of the multiple resolution chart of each Regional Gravity And is inconsistent, therefore the live width homogeneity of measuring can be subjected to the impact of reticle plate-making time error, that is to say the joint effect that can be subject to reticle plate-making and photoetching machine lens, can't truly reflect the performance of photoetching machine lens.
[summary of the invention]
Based on this, be necessary to provide a kind of error can eliminate reticle plate-making the time, the live width homogeneity that obtains can truly reflect the inhomogeneity method of testing of live width of photoetching machine lens performance.
The inhomogeneity method of testing of a kind of live width comprises the following steps: forming the live width design load on reticle is desired value A
1, A
2..., A
kK live width resolution chart, described k is natural number; All over surveying the live width actual value of described k live width resolution chart on reticle; The difference of the live width actual value of calculating described k live width resolution chart and corresponding desired value; Use litho machine with described k live width resolution chart photoetching to disk; The live width actual value of the above k live width resolution chart of test disk; Calculate the MEEF proof test value according to line width values and the live width actual value of described k live width resolution chart, described line width values is described desired value or described live width actual value; Calculate respectively the product of a described k difference and described MEEF proof test value, obtain k corresponding offset; Calculate respectively the live width actual value of k live width resolution chart on disk and k corresponding offset sum, obtain k live width end value, as estimating the inhomogeneity data of live width.
Preferably, each live width resolution chart includes x direction figure and y direction figure, and described x direction figure is mutually vertical with y direction figure.
Preferably, each live width resolution chart includes two live width figures, and described two live width figures are the transoid figure each other.
The another kind of test result inhomogeneity method of testing of live width more accurately is provided again.
The inhomogeneity method of testing of a kind of live width comprises the following steps: forming the live width design load on reticle is desired value A
1, A
2,, A
2..., A
kK live width resolution chart, described k is natural number; Form simultaneously k MEEF test structure at least, wherein, each live width resolution chart is corresponding with at least one MEEF test structure; All over surveying the live width actual value of described k live width resolution chart on reticle; The difference of the live width actual value of calculating described k live width resolution chart and corresponding desired value; Use litho machine with described k live width resolution chart and described k at least MEEF test structure photoetching to disk; The live width actual value of test the above k live width resolution chart of disk and a described k at least MEEF test structure; According to disk the above at least the live width actual value of k MEEF test structure calculate the MEEF proof test value; Calculate respectively the product of k difference and described MEEF proof test value, obtain k corresponding offset; Calculate respectively the live width actual value and a described corresponding k offset sum of k live width resolution chart on described disk, obtain k live width end value, as estimating the inhomogeneity data of live width.
Preferably, according to disk the above during the live width actual value of k MEEF test structure calculates the step of MEEF proof test value at least, be that the live width design load employing linear fit in conjunction with a described k at least MEEF test structure obtains described MEEF proof test value.
Preferably, also comprise all over the step of surveying the live width actual value of a described k at least MEEF test structure on reticle; Described according to disk the above during the live width actual value of k MEEF test structure calculates the step of MEEF proof test value at least, the live width actual value employing linear fit in conjunction with a described k at least MEEF test structure obtains described MEEF proof test value simultaneously.
Preferably, each of described live width resolution chart and MEEF test structure includes x direction figure and y direction figure, and described x direction figure is mutually vertical with y direction figure.
Preferably, each of described live width resolution chart and MEEF test structure includes two live width figures, and described two live width figures are the transoid figure each other.
The above-mentioned inhomogeneity method of testing of live width of having utilized the MEEF principle by calculating the MEEF proof test value, is compensated plate-making compensation of error value, thereby has eliminated the plate-making error, and the live width homogeneity data that obtain can truly reflect the photoetching machine lens performance.And can automatically test live width with scanning electron microscope, avoid location manually, improve testing efficiency.
And the above-mentioned another kind of test result inhomogeneity method of testing of live width more accurately, because be provided with especially the MEEF test structure, the sample during match is than science, and the MEEF proof test value that obtains is more accurate, and the precision of correction is higher, and test result is more accurate.
[description of drawings]
Fig. 1 is traditional inhomogeneity method of testing process flow diagram of live width;
Fig. 2 is the process flow diagram of the inhomogeneity method of testing of live width in an embodiment;
Fig. 3 is the process flow diagram of the inhomogeneity method of testing of live width in another embodiment;
Fig. 4 is the process flow diagram of the inhomogeneity method of testing of live width in another embodiment.
[embodiment]
The present invention utilizes MEEF (mask error enhancement factor, reticle error enhancer) principle, obtains the inhomogeneity method of testing of live width that testing procedure is simplified.Fig. 2 is the process flow diagram of the inhomogeneity method of testing of live width in an embodiment, comprises the following steps:
S210 forms k live width resolution chart on reticle.
Forming equally distributed live width design load on reticle is desired value A
1, A
2..., A
kK live width resolution chart, k is natural number.
In the present embodiment, each live width resolution chart comprises two live width figures, these two live width figures are transoid figure (being that printing opacity and lighttight part are just in time opposite) each other, in order to satisfy dissimilar testing requirement, namely strip structure is tested and the interval between each strip structure is tested.In a preferred embodiment, each live width resolution chart and correction pattern can also comprise close type structure (bar shaped of 1: 1 and spacer structure ratio) and thin type structure (fully independently bar shaped or spacer structure).
In a preferred embodiment, the live width resolution chart comprises x direction figure and y direction figure, and x direction figure is mutually vertical with y direction figure.Can also increase the figure of other directions if necessary, such as the figure of the directions such as 45 degree/135 degree.
S220 is all over surveying the live width actual value of k live width resolution chart on reticle.
S230, the difference of the live width actual value of calculating k live width resolution chart and corresponding desired value.
Calculate live width actual value with they the corresponding desired value A of k live width resolution chart on reticle
1, A
2..., A
kDifference, desired value A for example
1The live width resolution chart, the live width actual value on reticle is A
1', difference is exactly A
1-A
1'.Therefore obtain altogether k difference.Namely calculate and produced great error after the live width resolution chart is formed on reticle.
S240, use litho machine with the photoetching of k live width resolution chart to disk.
S250, the live width actual value of k live width resolution chart on the test disk.After the live width actual value refers to that the figure on reticle is transferred on disk, the line width values that on disk, figure obtains after measuring.
S260, according to line width values and the live width actual value calculating MEEF proof test value of k live width resolution chart, this line width values is desired value or live width actual value.
The computing formula of MEEF proof test value is as follows:
Wherein m is the projection multiplying power of litho machine.The MEEF proof test value reflected under fixing photoetching process condition, near the minimum resolution of litho machine, and the impact of the subtle change of live width on live width on disk on reticle.In the present embodiment, can adopt linear fit to obtain the MEEF proof test value.Represent the live width actual value with Y, x represents desired value (or live width actual value), and a represents the MEEF proof test value, and b represents a constant,
Y＝ax+b
Therefore the value of Y and x is organized in substitution more, adopts linear fit, just can obtain the MEEF proof test value.When noting linear fit calculating MEEF proof test value, several groups of x values must be close.
S270 calculates respectively the product of k difference and MEEF proof test value, obtains k corresponding offset.
S280 calculates respectively the live width actual value of k live width resolution chart on disk and k corresponding offset sum, obtains k live width end value, as estimating the inhomogeneity data of live width.
Having obtained estimating the live width homogeneity calculating of carrying out after the inhomogeneity data of live width is to want calculating mean value, variance, and minimax difference etc., known by those skilled in the art, repeat no more herein.
The above-mentioned inhomogeneity method of testing of live width of having utilized the MEEF principle by calculating the MEEF proof test value, is compensated plate-making compensation of error value, thereby has eliminated the plate-making error, and the live width homogeneity data that obtain can truly reflect the photoetching machine lens performance.And can automatically test live width with scanning electron microscope, avoid location manually, improve testing efficiency.
Fig. 3 is the process flow diagram of the inhomogeneity method of testing of live width in another embodiment, comprises the following steps:
S310 forms k live width resolution chart and k MEEF test structure at least on reticle.
Forming the live width design load on reticle is desired value A
1, A
2..., A
kK live width resolution chart, k is natural number.Form simultaneously k MEEF test structure at least, each of live width resolution chart has a corresponding MEEF test structure at least.In the situation that each live width resolution chart has the MEEF test structure of a plurality of correspondences, the live width design load of MEEF test structure is worth increasing or decreasing centered by the desired value of the live width resolution chart of correspondence, for example desired value A
1The live width resolution chart, the live width design load of its MEEF test structure can be A
1-1, A
1+ 1, A
1-2, A
1+ 2.......Note herein 1,2 etc. do not represent 1 concrete nanometer or 2 nanometers, and mean and be greater than or less than a kind of like this relativeness of desired value.
In the present embodiment, the MEEF test structure is evenly to place, and its live width design load increases progressively (or successively decreasing) by the step pitch of the second preset value, and this second preset value is 3 to 5 nanometers.
In the present embodiment, the quantity of MEEF test structure is 5 to 9 groups (corresponding same desired values be one group).In a preferred embodiment, each live width resolution chart comprises two live width figures, these two live width figures are transoid figure (being that printing opacity and lighttight part are just in time opposite) each other, in order to satisfy dissimilar testing requirement, namely strip structure is tested and the interval between each strip structure is tested.And also comprise close type structure (bar shaped of 1: 1 and spacer structure ratio) and thin type structure (fully independently bar shaped or spacer structure).
In a preferred embodiment, live width resolution chart and MEEF test structure include x direction figure and y direction figure, and x direction figure is mutually vertical with y direction figure.Can also increase the figure of other directions if necessary, such as the figure of the directions such as 45 degree/135 degree.
S320 is all over surveying the live width actual value of k live width resolution chart on reticle.
S330, the difference of the live width actual value of calculating k live width resolution chart and corresponding desired value.
Calculate live width actual value with they the corresponding desired value A of k live width resolution chart on reticle
1, A
2..., A
kDifference, desired value A for example
1The live width resolution chart, the live width actual value on reticle is A
1', difference is exactly A
1-A
1'.Therefore obtain altogether k difference.Namely calculate and produced great error after the live width resolution chart is formed on reticle.
S340, use litho machine with k live width resolution chart and at least the photoetching of k MEEF test structure to disk.
S350, k live width resolution chart and the live width actual value of k MEEF test structure at least on the test disk.After the live width actual value refers to that the figure on reticle is transferred on disk, the line width values that on disk, figure obtains after measuring.
S360, according on disk at least the live width actual value of k MEEF test structure calculate the MEEF proof test value.
The computing formula of MEEF proof test value is as follows:
Wherein m is the projection multiplying power of litho machine.The MEEF proof test value reflected under fixing photoetching process condition, near the minimum resolution of litho machine, and the impact of the subtle change of live width on live width on disk on reticle.Can adopt linear fit to obtain the MEEF proof test value, in the present embodiment, represent the live width actual value with Y, x represents the live width design load, and a represents the MEEF proof test value, and b represents a constant,
Y＝ax+b
Therefore the value of Y and x is organized in substitution more, adopts linear fit, just can obtain the MEEF proof test value.In the present embodiment, can adopt one group of MEEF test structure and corresponding live width resolution chart thereof to come match to obtain a MEEF proof test value.
S370 calculates respectively the product of k difference and MEEF proof test value, obtains k corresponding offset.
Each group MEEF test structure can obtain a MEEF proof test value, in the present embodiment, is after all MEEF proof test values are averaged, to multiply by respectively k the difference that obtains in the S330 step, obtains k offset.
S380 calculates respectively the live width actual value of k live width resolution chart on disk and k corresponding offset sum, obtains k live width end value, as estimating the inhomogeneity data of live width.
Embodiment illustrated in fig. 3ly compare embodiment illustrated in fig. 2ly, because be provided with especially the MEEF test structure, the sample during match is than science, and the MEEF proof test value that obtains is more accurate, and the precision of correction is higher, and test result is more accurate.
Fig. 4 is the process flow diagram of the inhomogeneity method of testing of live width in another embodiment, comprises the following steps:
S410 forms k live width resolution chart and k MEEF test structure at least on reticle.
Forming the live width design load on reticle is desired value A
1, A
2..., A
kK live width resolution chart, k is natural number.Form simultaneously k MEEF test structure at least, each of live width resolution chart has a corresponding MEEF test structure at least, in the situation that each live width resolution chart has the MEEF test structure of a plurality of correspondences, the live width design load of MEEF test structure is worth increasing or decreasing centered by the desired value of the live width resolution chart of correspondence, for example desired value A
1The live width resolution chart, the live width design load of its MEEF test structure can be A
1-1, A
1+ 1, A
1-2, A
1+ 2......
In the present embodiment, the MEEF test structure is evenly to place, and its live width design load increases progressively (or successively decreasing) by the step pitch of the second preset value, and this second preset value is 3 to 5 nanometers.
In the present embodiment, the quantity of MEEF test structure is 5 to 9 groups (corresponding same desired values be one group).In a preferred embodiment, each live width resolution chart comprises two live width figures, these two live width figures are transoid figure (being that printing opacity and lighttight part are just in time opposite) each other, in order to satisfy dissimilar testing requirement, namely strip structure is tested and the interval between each strip structure is tested.And also comprise close type structure (bar shaped of 1: 1 and spacer structure ratio) and thin type structure (fully independently bar shaped or spacer structure).
In a preferred embodiment, live width resolution chart and MEEF test structure include x direction figure and y direction figure, and x direction figure is mutually vertical with y direction figure.Can also increase the figure of other directions if necessary, such as the figure of the directions such as 45 degree/135 degree.
S420 is all over surveying k live width resolution chart and the live width actual value of MEEF test structure on reticle.
S430, the difference of the live width actual value of calculating k live width resolution chart and corresponding desired value.
Calculate live width actual value with they the corresponding desired value A of k live width resolution chart on reticle
1, A
2..., A
kDifference, desired value A for example
1The live width resolution chart, the live width actual value on reticle is A
1', difference is exactly A
1-A
1'.Therefore obtain altogether k difference.Namely calculate and produced great error after the live width resolution chart is formed on reticle.
S440, use litho machine with k live width resolution chart and at least the photoetching of k MEEF test structure to disk.
S450, k live width resolution chart and the live width actual value of k MEEF test structure at least on the test disk.After the live width actual value refers to that the figure on reticle is transferred on disk, the line width values that on disk, figure obtains after measuring.
S460, according on the live width actual value of k MEEF test structure at least and disk at least the live width actual value of k MEEF test structure calculate the MEEF proof test value.
The computing formula of MEEF proof test value is as follows:
Wherein m is the projection multiplying power of litho machine.The MEEF proof test value reflected under fixing photoetching process condition, near the minimum resolution of litho machine, and the impact of the subtle change of live width on live width on disk on reticle.Can adopt linear fit to obtain the MEEF proof test value, in the present embodiment, represent the live width actual value of MEEF test structure with Y, x represents the live width actual value, and a represents the MEEF proof test value, and b represents a constant,
Y＝ax+b
Therefore the value of Y and x is organized in substitution more, adopts linear fit, just can obtain the MEEF proof test value.In the present embodiment, can adopt one group of MEEF test structure and corresponding live width resolution chart thereof to come match to obtain a MEEF proof test value.
S470 calculates respectively the product of k difference and MEEF proof test value, obtains k corresponding offset.
Each group MEEF test structure can obtain a MEEF proof test value, in the present embodiment, is after all MEEF proof test values are averaged, to multiply by respectively k the difference that obtains in the S430 step, obtains k offset.
S480 calculates respectively the live width actual value of k live width resolution chart on disk and k corresponding offset sum, obtains k live width end value, as estimating the inhomogeneity data of live width.
Embodiment illustrated in fig. 4ly compare embodiment illustrated in fig. 3ly, the value of x adopts the live width actual value of MEEF test structure on reticle, and the MEEF proof test value that obtains is more accurate, and the precision of correction is higher, and test result is more accurate.
By a specific embodiment, the process of trying to achieve of live width end value once is described again.The desired value of now supposing certain live width resolution chart is A
1, obtain its live width end value SA
1
S410 forms k live width resolution chart and k MEEF test structure at least on reticle.
Wherein the desired value of the first live width resolution chart is A
1, the live width design load of the MEEF test structure that it is corresponding is for being respectively A
1-1, A
1+ 1, A
1-2, A
1+ 2.
S420 is all over surveying k live width resolution chart and the live width actual value of MEEF test structure on reticle.
Wherein the live width actual value of the first live width resolution chart is A
1'.The live width actual value of the MEEF test structure that it is corresponding is respectively A
1a', A
1b', A
1c', A
1d'.
S430, the difference of the live width actual value of calculating k live width resolution chart and corresponding desired value.
Be A for the first live width resolution chart
1-A
1'.
S440, use litho machine with k live width resolution chart and at least the photoetching of k MEEF test structure to disk.
S450, k live width resolution chart and the live width actual value of k MEEF test structure at least on the test disk.
Wherein the live width actual value of the first live width resolution chart is A
1".The live width actual value of the MEEF test structure that it is corresponding is respectively A
1a", A
1b", A
1c", A
1d".
S460, according on the live width actual value of k MEEF test structure at least and disk at least the live width actual value of k MEEF test structure calculate the MEEF proof test value.
Represent the live width actual value of MEEF test structure with Y, x represents the live width actual value, and a represents the MEEF proof test value, and b represents a constant,
Y＝ax+b
Therefore the value of Y and x is organized in substitution more, adopts linear fit, just can obtain the MEEF proof test value.For the first live width resolution chart, be with A
1a", A
1b", A
1c", A
1d" difference substitution Y, with A
1a', A
1b', A
1c', A
1d' difference substitution x.
S470 calculates respectively the product of k difference and MEEF proof test value, obtains k corresponding offset.
Each group MEEF test structure can obtain a MEEF proof test value, and the value that obtains after supposing all MEEF proof test values are averaged is 1, and the offset that the first live width resolution chart is corresponding is (A
1-A
1') * 1.
S480 calculates respectively the live width actual value of k live width resolution chart on disk and k corresponding offset sum, obtains k live width end value, as estimating the inhomogeneity data of live width.
The live width end value SA of the first live width resolution chart
1=A
1"+(A
1-A
1') * 1.
The above embodiment has only expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.Should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (8)
1. inhomogeneity method of testing of live width comprises the following steps:
Forming the live width design load on reticle is desired value A
1, A
2..., A
kK live width resolution chart, described k is natural number;
All over surveying the live width actual value of described k live width resolution chart on reticle;
The difference of the live width actual value of calculating described k live width resolution chart and corresponding desired value;
Use litho machine with described k live width resolution chart photoetching to disk;
The live width actual value of the above k live width resolution chart of test disk;
Calculate the MEEF proof test value according to line width values and the live width actual value of described k live width resolution chart, described line width values is described desired value or described live width actual value;
Calculate respectively the product of a described k difference and described MEEF proof test value, obtain k corresponding offset;
Calculate respectively the live width actual value of k live width resolution chart on disk and k corresponding offset sum, obtain k live width end value, as estimating the inhomogeneity data of live width.
2. the inhomogeneity method of testing of live width according to claim 1, is characterized in that, each live width resolution chart includes x direction figure and y direction figure, and described x direction figure is mutually vertical with y direction figure.
3. the inhomogeneity method of testing of live width according to claim 1, is characterized in that, each live width resolution chart includes two live width figures, and described two live width figures are the transoid figure each other.
4. inhomogeneity method of testing of live width comprises the following steps:
Forming the live width design load on reticle is desired value A
1, A
2..., A
kK live width resolution chart, described k is natural number; Form simultaneously k MEEF test structure at least, wherein, each live width resolution chart is corresponding with at least one MEEF test structure;
All over surveying the live width actual value of described k live width resolution chart on reticle;
The difference of the live width actual value of calculating described k live width resolution chart and corresponding desired value;
Use litho machine with described k live width resolution chart and described k at least MEEF test structure photoetching to disk;
The live width actual value of test the above k live width resolution chart of disk and a described k at least MEEF test structure;
According to disk the above at least the live width actual value of k MEEF test structure calculate the MEEF proof test value;
Calculate respectively the product of k difference and described MEEF proof test value, obtain k corresponding offset;
Calculate respectively the live width actual value and a described corresponding k offset sum of k live width resolution chart on described disk, obtain k live width end value, as estimating the inhomogeneity data of live width.
5. the inhomogeneity method of testing of live width according to claim 4, it is characterized in that, according to disk the above during the live width actual value of k MEEF test structure calculates the step of MEEF proof test value at least, be that the live width design load employing linear fit in conjunction with a described k at least MEEF test structure obtains described MEEF proof test value.
6. the inhomogeneity method of testing of live width according to claim 4, is characterized in that, also comprises all over the step of surveying the live width actual value of a described k at least MEEF test structure on reticle; Described according to disk the above during the live width actual value of k MEEF test structure calculates the step of MEEF proof test value at least, the live width actual value employing linear fit in conjunction with a described k at least MEEF test structure obtains described MEEF proof test value simultaneously.
7. the inhomogeneity method of testing of the described live width of any one according to claim 4-6, it is characterized in that, each of described live width resolution chart and MEEF test structure includes x direction figure and y direction figure, and described x direction figure is mutually vertical with y direction figure.
8. the inhomogeneity method of testing of the described live width of any one according to claim 4-6, is characterized in that, each of described live width resolution chart and MEEF test structure includes two live width figures, and described two live width figures are the transoid figure each other.
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|---|---|---|---|---|
| TWI617856B (en) * | 2015-12-25 | 2018-03-11 | Lens group correction method |
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