CN102466981A - Method for testing linewidth uniformity - Google Patents
Method for testing linewidth uniformity Download PDFInfo
- Publication number
- CN102466981A CN102466981A CN2010105457640A CN201010545764A CN102466981A CN 102466981 A CN102466981 A CN 102466981A CN 2010105457640 A CN2010105457640 A CN 2010105457640A CN 201010545764 A CN201010545764 A CN 201010545764A CN 102466981 A CN102466981 A CN 102466981A
- Authority
- CN
- China
- Prior art keywords
- live width
- meef
- value
- resolution chart
- testing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates a method for testing linewidth uniformity. The method comprises the following steps of 1, preparing k linewidth testing figures of which desired values are linewidth design values on a lithographic plate, 2, testing linewidth actual values of all the k linewidth testing figures on the lithographic plate, 3, calculating k differences between the linewidth actual values of the k linewidth testing figures and the corresponding desired values, 4, carrying out photoetching of the k linewidth testing figures on a disk, 5, testing linewidth real values of the k linewidth testing figures on the disk, 6, calculating mask error enhancement factor (MEEF) verification values according to the desired values or the linewidth actual values as linewidth values of the k linewidth testing figures, and the linewidth real values, 7, respectively calculating the product of the k differences and the MEEF verification values so that k corresponding compensation values are obtained, and 8, calculating the sum of the linewidth real values of the k linewidth testing figures and the k corresponding compensation values so that k linewidth final values are obtained, wherein the k linewidth final values are utilized as linewidth uniformity evaluation data. The method provided by the invention has the advantage that plate making error compensation values are obtained by MEEF verification value calculation so that a plate making error is avoided.
Description
[technical field]
The present invention relates to semiconductor technology, relate in particular to a kind of inhomogeneity method of testing of live width that is used for photoetching machine lens performance evaluation.
[background technology]
The reticle figure is called a shot through the single imaging region of photoetching machine lens exposure back on disk; Live width homogeneity on the disk in each shot is an important parameter of photoetching process; Live width homogeneity when especially the shot size is the maximum scope capable of using of photoetching machine lens is estimated a key index of litho machine especially.
Traditional evaluation methods is on reticle, to repeat to place some live width resolution charts, and exposure back test live width on disk obtains (within shot, live width homogeneity performance WIS) in the shot.Fig. 1 is traditional inhomogeneity method of testing process flow diagram of live width.May further comprise the steps: S110, the resolution chart of the different live widths of formation on reticle, every kind of live width all will form a plurality of identical repetitive patterns.S120, with the maximum size capable of using of photoetching machine lens with the resolution chart photoetching on the reticle to disk.S130, WIS live width homogeneity on the test disk is to estimate the performance of litho machine.
Traditional evaluation methods is significant for the quality monitoring of actual product, but really can't estimate photoetching machine lens itself.This is because in the making reticle, when transferring to resolution chart on the reticle, every kind of live width all will form a plurality of repetitive patterns.But because the influence of reticle manufacture craft; The live width of each regional repeated test figure is inconsistent on the final reticle; Therefore the live width homogeneity of measuring can receive the influence of reticle plate-making time error; That is to say the common influence that can receive reticle plate-making and photoetching machine lens, can't truly reflect the performance of photoetching machine lens.
[summary of the invention]
Based on this, be necessary to provide a kind of error can eliminate reticle plate-making the time, the live width homogeneity that obtains can truly reflect the inhomogeneity method of testing of live width of photoetching machine lens performance.
The inhomogeneity method of testing of a kind of live width may further comprise the steps: on reticle, forming the live width design load is desired value A
1, A
2..., A
kK live width resolution chart, said k is a natural number; All over surveying the live width actual value of said k live width resolution chart on reticle; The difference of the live width actual value of calculating said k live width resolution chart and corresponding desired value; Use litho machine with said k live width resolution chart photoetching to disk; The live width actual value of the above k live width resolution chart of test disk; Line width values and live width actual value according to said k live width resolution chart calculate the MEEF proof test value, and said line width values is said desired value or said live width actual value; Calculate the product of a said k difference and said MEEF proof test value respectively, obtain k corresponding offset; Calculate the live width actual value of k live width resolution chart on the disk and k corresponding offset sum respectively, obtain k live width end value, as estimating the inhomogeneity data of live width.
Preferably, each live width resolution chart includes x direction figure and y direction figure, and said x direction figure is vertical each other with y direction figure.
Preferably, each live width resolution chart includes two live width figures, and said two live width figures are the transoid figure each other.
The another kind of test result inhomogeneity method of testing of live width more accurately is provided again.
The inhomogeneity method of testing of a kind of live width may further comprise the steps: on reticle, forming the live width design load is desired value A
1, A
2,, A
2..., A
kK live width resolution chart, said k is a natural number; Form k MEEF test structure at least simultaneously, wherein, each live width resolution chart is corresponding with at least one MEEF test structure; All over surveying the live width actual value of said k live width resolution chart on reticle; The difference of the live width actual value of calculating said k live width resolution chart and corresponding desired value; Use litho machine with said k live width resolution chart and said k at least MEEF test structure photoetching to disk; The live width actual value of test the above a k live width resolution chart of disk and a said k at least MEEF test structure; According to disk the above at least the live width actual value of k MEEF test structure calculate the MEEF proof test value; Calculate the product of k difference and said MEEF proof test value respectively, obtain k corresponding offset; Calculate the live width actual value and a said corresponding k offset sum of k live width resolution chart on the said disk respectively, obtain k live width end value, as estimating the inhomogeneity data of live width.
Preferably, according to disk the above at least the live width actual value of k MEEF test structure calculate in the step of MEEF proof test value, be to combine the live width design load employing linear fit of a said k at least MEEF test structure to obtain said MEEF proof test value.
Preferably, also comprise all over the step of surveying the live width actual value of a said k at least MEEF test structure on reticle; Said according to disk the above at least the live width actual value of k MEEF test structure calculate in the step of MEEF proof test value, combine the live width actual value employing linear fit of a said k at least MEEF test structure to obtain said MEEF proof test value simultaneously.
Preferably, each of said live width resolution chart and MEEF test structure includes x direction figure and y direction figure, and said x direction figure is vertical each other with y direction figure.
Preferably, each of said live width resolution chart and MEEF test structure includes two live width figures, and said two live width figures are the transoid figure each other.
The above-mentioned inhomogeneity method of testing of live width of having utilized the MEEF principle through calculating the MEEF proof test value, is compensated plate-making compensation of error value, thereby has eliminated the plate-making error, and the live width homogeneity data that obtain can truly reflect the photoetching machine lens performance.And can test live width automatically with ESEM, avoid location manually, improve testing efficiency.
And the above-mentioned another kind of test result inhomogeneity method of testing of live width more accurately, because the special MEEF test structure that is provided with, the sample during match is than science, and the MEEF proof test value that obtains is more accurate, and the precision of correction is higher, and test result is more accurate.
[description of drawings]
Fig. 1 is traditional inhomogeneity method of testing process flow diagram of live width;
Fig. 2 is the process flow diagram of the inhomogeneity method of testing of live width among the embodiment;
Fig. 3 is the process flow diagram of the inhomogeneity method of testing of live width among another embodiment;
Fig. 4 is the process flow diagram of the inhomogeneity method of testing of live width among another embodiment.
[embodiment]
The present invention utilizes MEEF (mask error enhancement factor, reticle error enhancer) principle, obtains the inhomogeneity method of testing of live width that testing procedure is able to simplify.Fig. 2 is the process flow diagram of the inhomogeneity method of testing of live width among the embodiment, may further comprise the steps:
S210 forms k live width resolution chart on reticle.
On reticle, forming equally distributed live width design load is desired value A
1, A
2..., A
kK live width resolution chart, k is a natural number.
In the present embodiment; Each live width resolution chart comprises two live width figures; These two live width figures are transoid figure (being that printing opacity and lighttight part are just in time opposite) each other; So that satisfy dissimilar testing requirements, promptly strip structure is tested and the interval between each strip structure is tested.In a preferred embodiment, each live width resolution chart and correction pattern can also comprise close type structure (1: 1 bar shaped and spacer structure ratio) and thin type structure (fully independently bar shaped or spacer structure).
In a preferred embodiment, the live width resolution chart comprises x direction figure and y direction figure, and x direction figure is vertical each other with y direction figure.Can also increase the figure of other directions if necessary, for example the figure of 45 directions such as degree/135 degree etc.
S220 is all over surveying the live width actual value of k live width resolution chart on reticle.
S230, the difference of the live width actual value of calculating k live width resolution chart and corresponding desired value.
Calculate live width actual value with they the corresponding desired value A of k live width resolution chart on reticle
1, A
2..., A
kDifference, desired value A for example
1The live width resolution chart, the live width actual value on reticle is A
1', then difference is exactly A
1-A
1'.Therefore obtain k difference altogether.Just calculate and produced great error after the live width resolution chart is formed on the reticle.
S240, use litho machine with the photoetching of k live width resolution chart to disk.
S250, the live width actual value of k live width resolution chart on the test disk.After the live width actual value is meant that the figure on the reticle is transferred on the disk, the line width values that figure obtains after measuring on the disk.
S260, according to the line width values and the live width actual value calculating MEEF proof test value of k live width resolution chart, this line width values is desired value or live width actual value.
The computing formula of MEEF proof test value is following:
Wherein m is the projection multiplying power of litho machine.The MEEF proof test value has reflected that near the minimum resolution of litho machine, the subtle change of live width is to the influence of live width on the disk on the reticle under fixing photoetching process condition.In the present embodiment, can adopt linear fit to obtain the MEEF proof test value.Represent the live width actual value with Y, x representes desired value (or live width actual value), and a representes the MEEF proof test value, and b representes a constant, then
Y＝ax+b
Therefore the value of Y and x is organized in substitution more, adopts linear fit, just can obtain the MEEF proof test value.Several groups of x values must be close when noting linear fit calculating MEEF proof test value.
S270 calculates the product of k difference and MEEF proof test value respectively, obtains k corresponding offset.
S280 calculates the live width actual value of k live width resolution chart on the disk and k corresponding offset sum respectively, obtains k live width end value, as estimating the inhomogeneity data of live width.
Having obtained estimating the live width homogeneity calculating of carrying out after the inhomogeneity data of live width is to want calculating mean value, variance, and minimax differences etc. are the convention of those skilled in the art institute, repeat no more here.
The above-mentioned inhomogeneity method of testing of live width of having utilized the MEEF principle through calculating the MEEF proof test value, is compensated plate-making compensation of error value, thereby has eliminated the plate-making error, and the live width homogeneity data that obtain can truly reflect the photoetching machine lens performance.And can test live width automatically with ESEM, avoid location manually, improve testing efficiency.
Fig. 3 is the process flow diagram of the inhomogeneity method of testing of live width among another embodiment, may further comprise the steps:
S310 forms k live width resolution chart and k MEEF test structure at least on reticle.
On reticle, forming the live width design load is desired value A
1, A
2..., A
kK live width resolution chart, k is a natural number.Form k MEEF test structure at least simultaneously, each of live width resolution chart has a corresponding MEEF test structure at least.Have at each live width resolution chart under the situation of MEEF test structure of a plurality of correspondences, the live width design load of MEEF test structure is the central value increasing or decreasing with the desired value of the live width resolution chart of correspondence, for example desired value A
1The live width resolution chart, the live width design load of its MEEF test structure can be A
1-1, A
1+ 1, A
1-2, A
1+ 2.......Note here 1,2 etc. do not represent 1 concrete nanometer or 2 nanometers, but expression is greater than or less than a kind of like this relativeness of desired value.
In the present embodiment, the MEEF test structure is evenly to place, and its live width design load increases progressively (or successively decreasing) by the step pitch of second preset value, and this second preset value is 3 to 5 nanometers.
In the present embodiment, the quantity of MEEF test structure is 5 to 9 groups (corresponding same desired values be one group).In a preferred embodiment; Each live width resolution chart comprises two live width figures; These two live width figures are transoid figure (being that printing opacity and lighttight part are just in time opposite) each other; So that satisfy dissimilar testing requirements, promptly strip structure is tested and the interval between each strip structure is tested.And also comprise close type structure (1: 1 bar shaped and spacer structure ratio) and thin type structure (fully independently bar shaped or spacer structure).
In a preferred embodiment, live width resolution chart and MEEF test structure include x direction figure and y direction figure, and x direction figure is vertical each other with y direction figure.Can also increase the figure of other directions if necessary, for example the figure of 45 directions such as degree/135 degree etc.
S320 is all over surveying the live width actual value of k live width resolution chart on reticle.
S330, the difference of the live width actual value of calculating k live width resolution chart and corresponding desired value.
Calculate live width actual value with they the corresponding desired value A of k live width resolution chart on reticle
1, A
2..., A
kDifference, desired value A for example
1The live width resolution chart, the live width actual value on reticle is A
1', then difference is exactly A
1-A
1'.Therefore obtain k difference altogether.Just calculate and produced great error after the live width resolution chart is formed on the reticle.
S340, use litho machine with k live width resolution chart and at least the photoetching of k MEEF test structure to disk.
S350, k the live width resolution chart and the live width actual value of k MEEF test structure at least on the test disk.After the live width actual value is meant that the figure on the reticle is transferred on the disk, the line width values that figure obtains after measuring on the disk.
S360, according on the disk at least the live width actual value of k MEEF test structure calculate the MEEF proof test value.
The computing formula of MEEF proof test value is following:
Wherein m is the projection multiplying power of litho machine.The MEEF proof test value has reflected that near the minimum resolution of litho machine, the subtle change of live width is to the influence of live width on the disk on the reticle under fixing photoetching process condition.Can adopt linear fit to obtain the MEEF proof test value, in the present embodiment, represent the live width actual value with Y, x representes the live width design load, and a representes the MEEF proof test value, and b representes a constant, then
Y＝ax+b
Therefore the value of Y and x is organized in substitution more, adopts linear fit, just can obtain the MEEF proof test value.In the present embodiment, can adopt one group of MEEF test structure and corresponding live width resolution chart thereof to come match to obtain a MEEF proof test value.
S370 calculates the product of k difference and MEEF proof test value respectively, obtains k corresponding offset.
Each group MEEF test structure can obtain a MEEF proof test value, in the present embodiment, is after all MEEF proof test values are averaged, to multiply by k the difference that obtains in the S330 step respectively, obtains k offset.
S380 calculates the live width actual value of k live width resolution chart on the disk and k corresponding offset sum respectively, obtains k live width end value, as estimating the inhomogeneity data of live width.
Embodiment illustrated in fig. 3ly compare embodiment illustrated in fig. 2ly, because the special MEEF test structure that is provided with, the sample during match is than science, and the MEEF proof test value that obtains is more accurate, and the precision of correction is higher, and test result is more accurate.
Fig. 4 is the process flow diagram of the inhomogeneity method of testing of live width among another embodiment, may further comprise the steps:
S410 forms k live width resolution chart and k MEEF test structure at least on reticle.
On reticle, forming the live width design load is desired value A
1, A
2..., A
kK live width resolution chart, k is a natural number.Form k MEEF test structure at least simultaneously; Each of live width resolution chart has a corresponding MEEF test structure at least; Have at each live width resolution chart under the situation of MEEF test structure of a plurality of correspondences; The live width design load of MEEF test structure is the central value increasing or decreasing with the desired value of the live width resolution chart of correspondence, for example desired value A
1The live width resolution chart, the live width design load of its MEEF test structure can be A
1-1, A
1+ 1, A
1-2, A
1+ 2......
In the present embodiment, the MEEF test structure is evenly to place, and its live width design load increases progressively (or successively decreasing) by the step pitch of second preset value, and this second preset value is 3 to 5 nanometers.
In the present embodiment, the quantity of MEEF test structure is 5 to 9 groups (corresponding same desired values be one group).In a preferred embodiment; Each live width resolution chart comprises two live width figures; These two live width figures are transoid figure (being that printing opacity and lighttight part are just in time opposite) each other; So that satisfy dissimilar testing requirements, promptly strip structure is tested and the interval between each strip structure is tested.And also comprise close type structure (1: 1 bar shaped and spacer structure ratio) and thin type structure (fully independently bar shaped or spacer structure).
In a preferred embodiment, live width resolution chart and MEEF test structure include x direction figure and y direction figure, and x direction figure is vertical each other with y direction figure.Can also increase the figure of other directions if necessary, for example the figure of 45 directions such as degree/135 degree etc.
S420 is all over surveying k live width resolution chart and the live width actual value of MEEF test structure on reticle.
S430, the difference of the live width actual value of calculating k live width resolution chart and corresponding desired value.
Calculate live width actual value with they the corresponding desired value A of k live width resolution chart on reticle
1, A
2..., A
kDifference, desired value A for example
1The live width resolution chart, the live width actual value on reticle is A
1', then difference is exactly A
1-A
1'.Therefore obtain k difference altogether.Just calculate and produced great error after the live width resolution chart is formed on the reticle.
S440, use litho machine with k live width resolution chart and at least the photoetching of k MEEF test structure to disk.
S450, k the live width resolution chart and the live width actual value of k MEEF test structure at least on the test disk.After the live width actual value is meant that the figure on the reticle is transferred on the disk, the line width values that figure obtains after measuring on the disk.
S460, according on the live width actual value of k MEEF test structure at least and the disk at least the live width actual value of k MEEF test structure calculate the MEEF proof test value.
The computing formula of MEEF proof test value is following:
Wherein m is the projection multiplying power of litho machine.The MEEF proof test value has reflected that near the minimum resolution of litho machine, the subtle change of live width is to the influence of live width on the disk on the reticle under fixing photoetching process condition.Can adopt linear fit to obtain the MEEF proof test value, in the present embodiment, represent the live width actual value of MEEF test structure with Y, x representes the live width actual value, and a representes the MEEF proof test value, and b representes a constant, then
Y＝ax+b
Therefore the value of Y and x is organized in substitution more, adopts linear fit, just can obtain the MEEF proof test value.In the present embodiment, can adopt one group of MEEF test structure and corresponding live width resolution chart thereof to come match to obtain a MEEF proof test value.
S470 calculates the product of k difference and MEEF proof test value respectively, obtains k corresponding offset.
Each group MEEF test structure can obtain a MEEF proof test value, in the present embodiment, is after all MEEF proof test values are averaged, to multiply by k the difference that obtains in the S430 step respectively, obtains k offset.
S480 calculates the live width actual value of k live width resolution chart on the disk and k corresponding offset sum respectively, obtains k live width end value, as estimating the inhomogeneity data of live width.
Embodiment illustrated in fig. 4ly compare embodiment illustrated in fig. 3ly, the value of x adopts the live width actual value of MEEF test structure on the reticle, and the MEEF proof test value that obtains is more accurate, and the precision of correction is higher, and test result is more accurate.
Through a concrete embodiment process of trying to achieve of live width end value once is described again.The desired value of at present supposing certain live width resolution chart is A
1, obtain its live width end value SA
1
S410 forms k live width resolution chart and k MEEF test structure at least on reticle.
Wherein the desired value of the first live width resolution chart is A
1, the live width design load of the MEEF test structure that it is corresponding is for being respectively A
1-1, A
1+ 1, A
1-2, A
1+ 2.
S420 is all over surveying k live width resolution chart and the live width actual value of MEEF test structure on reticle.
Wherein the live width actual value of the first live width resolution chart is A
1'.The live width actual value of the MEEF test structure that it is corresponding is respectively A
1a', A
1b', A
1c', A
1d'.
S430, the difference of the live width actual value of calculating k live width resolution chart and corresponding desired value.
For the first live width resolution chart is A
1-A
1'.
S440, use litho machine with k live width resolution chart and at least the photoetching of k MEEF test structure to disk.
S450, k the live width resolution chart and the live width actual value of k MEEF test structure at least on the test disk.
Wherein the live width actual value of the first live width resolution chart is A
1".The live width actual value of the MEEF test structure that it is corresponding is respectively A
1a", A
1b", A
1c", A
1d".
S460, according on the live width actual value of k MEEF test structure at least and the disk at least the live width actual value of k MEEF test structure calculate the MEEF proof test value.
Represent the live width actual value of MEEF test structure with Y, x representes the live width actual value, and a representes the MEEF proof test value, and b representes a constant, then
Y＝ax+b
Therefore the value of Y and x is organized in substitution more, adopts linear fit, just can obtain the MEEF proof test value.For the first live width resolution chart, be with A
1a", A
1b", A
1c", A
1d" difference substitution Y, with A
1a', A
1b', A
1c', A
1d' difference substitution x.
S470 calculates the product of k difference and MEEF proof test value respectively, obtains k corresponding offset.
Each group MEEF test structure can obtain a MEEF proof test value, and the value that obtains after suppose all MEEF proof test values are averaged is 1, and then the offset of first live width resolution chart correspondence is (A
1-A
1') * 1.
S480 calculates the live width actual value of k live width resolution chart on the disk and k corresponding offset sum respectively, obtains k live width end value, as estimating the inhomogeneity data of live width.
The live width end value SA of the first live width resolution chart then
1=A
1"+(A
1-A
1') * 1.
The above embodiment has only expressed several kinds of embodiments of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the present invention's design, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with accompanying claims.
Claims (8)
1. inhomogeneity method of testing of live width may further comprise the steps:
On reticle, forming the live width design load is desired value A
1, A
2..., A
kK live width resolution chart, said k is a natural number;
All over surveying the live width actual value of said k live width resolution chart on reticle;
The difference of the live width actual value of calculating said k live width resolution chart and corresponding desired value;
Use litho machine with said k live width resolution chart photoetching to disk;
The live width actual value of the above k live width resolution chart of test disk;
Line width values and live width actual value according to said k live width resolution chart calculate the MEEF proof test value, and said line width values is said desired value or said live width actual value;
Calculate the product of a said k difference and said MEEF proof test value respectively, obtain k corresponding offset;
Calculate the live width actual value of k live width resolution chart on the disk and k corresponding offset sum respectively, obtain k live width end value, as estimating the inhomogeneity data of live width.
2. the inhomogeneity method of testing of live width according to claim 1 is characterized in that, each live width resolution chart includes x direction figure and y direction figure, and said x direction figure is vertical each other with y direction figure.
3. the inhomogeneity method of testing of live width according to claim 1 is characterized in that each live width resolution chart includes two live width figures, and said two live width figures are the transoid figure each other.
4. inhomogeneity method of testing of live width may further comprise the steps:
On reticle, forming the live width design load is desired value A
1, A
2..., A
kK live width resolution chart, said k is a natural number; Form k MEEF test structure at least simultaneously, wherein, each live width resolution chart is corresponding with at least one MEEF test structure;
All over surveying the live width actual value of said k live width resolution chart on reticle;
The difference of the live width actual value of calculating said k live width resolution chart and corresponding desired value;
Use litho machine with said k live width resolution chart and said k at least MEEF test structure photoetching to disk;
The live width actual value of test the above a k live width resolution chart of disk and a said k at least MEEF test structure;
According to disk the above at least the live width actual value of k MEEF test structure calculate the MEEF proof test value;
Calculate the product of k difference and said MEEF proof test value respectively, obtain k corresponding offset;
Calculate the live width actual value and a said corresponding k offset sum of k live width resolution chart on the said disk respectively, obtain k live width end value, as estimating the inhomogeneity data of live width.
5. the inhomogeneity method of testing of live width according to claim 4; It is characterized in that; According to disk the above at least the live width actual value of k MEEF test structure calculate in the step of MEEF proof test value, be to combine the live width design load employing linear fit of a said k at least MEEF test structure to obtain said MEEF proof test value.
6. the inhomogeneity method of testing of live width according to claim 4 is characterized in that, also comprises all over the step of surveying the live width actual value of a said k at least MEEF test structure on reticle; Said according to disk the above at least the live width actual value of k MEEF test structure calculate in the step of MEEF proof test value, combine the live width actual value employing linear fit of a said k at least MEEF test structure to obtain said MEEF proof test value simultaneously.
7. according to any inhomogeneity method of testing of described live width among the claim 4-6; It is characterized in that; Each of said live width resolution chart and MEEF test structure includes x direction figure and y direction figure, and said x direction figure is vertical each other with y direction figure.
8. according to any inhomogeneity method of testing of described live width among the claim 4-6, it is characterized in that each of said live width resolution chart and MEEF test structure includes two live width figures, said two live width figures are the transoid figure each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010545764 CN102466981B (en) | 2010-11-16 | 2010-11-16 | Method for testing linewidth uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010545764 CN102466981B (en) | 2010-11-16 | 2010-11-16 | Method for testing linewidth uniformity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102466981A true CN102466981A (en) | 2012-05-23 |
| CN102466981B CN102466981B (en) | 2013-11-06 |
Family
ID=46070807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010545764 Active CN102466981B (en) | 2010-11-16 | 2010-11-16 | Method for testing linewidth uniformity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102466981B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106990676A (en) * | 2017-03-07 | 2017-07-28 | 无锡影速半导体科技有限公司 | The method for realizing laser direct imaging pattern uniformity |
| CN109375441A (en) * | 2018-12-21 | 2019-02-22 | 信利半导体有限公司 | Substrate Wiring structure and cabling production method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI617856B (en) * | 2015-12-25 | 2018-03-11 | Lens group correction method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3328676B2 (en) * | 1991-11-28 | 2002-09-30 | 株式会社ニコン | Inspection method of projection optical system, mask substrate, and mark formation method |
| JP2005055563A (en) * | 2003-08-01 | 2005-03-03 | Sony Corp | Mask correction program, mask correction method and method for manufacturing mask |
| CN101042527A (en) * | 2006-03-20 | 2007-09-26 | 中芯国际集成电路制造(上海)有限公司 | Compensation process for critical dimension homogeneity |
| KR100864934B1 (en) * | 2007-08-20 | 2008-10-22 | 주식회사 동부하이텍 | Method for mask layout correction, and apparatus for implementing the same |
| US7550237B2 (en) * | 2005-01-19 | 2009-06-23 | Winbond Electronics Corp. | Systems and methods for determining width/space limits for mask layout |
-
2010
- 2010-11-16 CN CN 201010545764 patent/CN102466981B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3328676B2 (en) * | 1991-11-28 | 2002-09-30 | 株式会社ニコン | Inspection method of projection optical system, mask substrate, and mark formation method |
| JP2005055563A (en) * | 2003-08-01 | 2005-03-03 | Sony Corp | Mask correction program, mask correction method and method for manufacturing mask |
| US7550237B2 (en) * | 2005-01-19 | 2009-06-23 | Winbond Electronics Corp. | Systems and methods for determining width/space limits for mask layout |
| CN101042527A (en) * | 2006-03-20 | 2007-09-26 | 中芯国际集成电路制造(上海)有限公司 | Compensation process for critical dimension homogeneity |
| KR100864934B1 (en) * | 2007-08-20 | 2008-10-22 | 주식회사 동부하이텍 | Method for mask layout correction, and apparatus for implementing the same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106990676A (en) * | 2017-03-07 | 2017-07-28 | 无锡影速半导体科技有限公司 | The method for realizing laser direct imaging pattern uniformity |
| CN106990676B (en) * | 2017-03-07 | 2019-03-29 | 无锡影速半导体科技有限公司 | The method for realizing laser direct imaging pattern uniformity |
| CN109375441A (en) * | 2018-12-21 | 2019-02-22 | 信利半导体有限公司 | Substrate Wiring structure and cabling production method |
| CN109375441B (en) * | 2018-12-21 | 2022-03-01 | 信利半导体有限公司 | Substrate routing structure and routing manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102466981B (en) | 2013-11-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105049141B (en) | A kind of inter-signal interference relationship analysis method based on multidimensional interference space model | |
| US8705838B2 (en) | Method for mask inspection for mask design and mask production | |
| CN107683475B (en) | Asymmetric detection, quantization and the control caused using the process of patterned wafers dimensional measurement | |
| TW200710596A (en) | Method of selecting a grid model for correcting a process recipe for grid deformations in a lithographic apparatus and lithographic assembly using the same | |
| CN102466982B (en) | A kind of method of testing of live width homogeneity | |
| CN102466981B (en) | Method for testing linewidth uniformity | |
| JP2012532458A5 (en) | ||
| CN108073419B (en) | A kind of implementation method in electric power enterprise mobile application common component library | |
| CN103792785B (en) | A kind of method that optical proximity correction is carried out to the figure with low picture contrast | |
| CN1928722B (en) | Testing mark for detecting projection object lens image errors, mask and detection method | |
| CN102878958B (en) | A kind of measuring method of lithographic forme dot area | |
| CN102081045B (en) | Structural damage identification method based on laser television holographic technique | |
| CN104777723B (en) | Alignment mark and alignment measuring method | |
| CN102955378B (en) | Photoresist morphology characterization method | |
| CN114199160A (en) | Circuit board component geometric detection method based on binary coding grating defocused projection | |
| CN109270089B (en) | Method for rapidly acquiring printing dot enlargement of coated paper | |
| CN116385346A (en) | Method and device for analyzing and processing critical dimension data of mask | |
| CN102043343B (en) | Method for measuring focus point of exposure machine | |
| CN105115998A (en) | Method for determining powder diffraction preferred orientation parameter | |
| CN102445860B (en) | Method for matching different photoetching machines in same photoetching technology | |
| CN109033667B (en) | A kind of geometrical model high frequency kinetic characteristics predicting method based on affine arithmetic and perturbation method | |
| CN107526254A (en) | A kind of detection method of the combination property of high speed online production heat-sensitive positive picture CTP plate material | |
| CN210005138U (en) | -structure flexural member elastic stage bending moment measuring device | |
| CN107300390B (en) | Real-time correction method and real-time correction system for river network hydrodynamic model | |
| CN105806943B (en) | Composite material beam construction damage positioning method and system based on discrete wavelet |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171013 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Co-patentee before: Wuxi Huarun Shanghua Technology Co., Ltd. Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |