CN102463521A - Polishing method and device - Google Patents
Polishing method and device Download PDFInfo
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- CN102463521A CN102463521A CN2010105464659A CN201010546465A CN102463521A CN 102463521 A CN102463521 A CN 102463521A CN 2010105464659 A CN2010105464659 A CN 2010105464659A CN 201010546465 A CN201010546465 A CN 201010546465A CN 102463521 A CN102463521 A CN 102463521A
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Abstract
The invention relates to a polishing method and device. The method comprises the following steps of: carrying out medium chemical mechanical polishing (CMP) on a wafer medium; detecting a polishing effect of the medium CMP; and determining a polishing menu for carrying out wolfram CMP on the wafer medium according to the polishing effect; In the invention, the corresponding polishing menu of the wolfram CMP is determined according to the polishing effect of the medium CMP so as to assist the medium CMP, thereby greatly keeping and improving the polishing effect of the medium CMP, solving the problems of uneven region distribution, large previous value amplitude and thick edge of a chemical vapor deposition thin layer, keeping and improving the flatness of the wafer medium, and further greatly improving the performance and manufacturing yield of semiconductor products.
Description
[technical field]
The present invention relates to a kind of semiconductor technology method and device, relate in particular to a kind of Ginding process and device.
[background technology]
Along with the reduction of semiconductor devices (IC) manufacturing dimension, the also corresponding attenuation of demand thickness of inter-level dielectric (ILD) and metal interlayer medium (IMD).
The flatness of inter-level dielectric and metal interlayer medium all has very big influence to the performance of semiconductor devices and the fine ratio of product of semiconductor devices; The flatness of inter-level dielectric and metal interlayer medium mainly receives the coating region skewness of chemical vapour deposition (CVD) deposit; Preceding value amplitude (range) is big, the influence that the edge is thick.
At present, to the coating region skewness of chemical vapour deposition deposit, preceding value amplitude is big, and the problem that the edge is thick is main through regulating medium cmp (OCMP) menu, optimizes technology and solves.Through regulating medium cmp menu, the grinding rate that makes the thin layer edge is than middle high (400 dusts/minute), thereby solved the coating region skewness of chemical vapour deposition deposit, preceding value amplitude is big, the problem that the edge is thick.
Usually, after the medium cmp, also to carry out chemical mechanical polishing of tungsten (WCMP), medium is ground.Chemical mechanical polishing of tungsten mainly adopts the generalization menu (BKM recipe) of Applied Materials exploitation.Learn through daily quality monitoring; The dielectric loss that chemical mechanical polishing of tungsten causes is about
; The grinding rate that the edge dielectric loss is optimized the edge that menu improves than middle low
approximately this value and medium cmp is (400 dusts/minute) quite; When therefore the medium flatness meets the demands behind the medium cmp; Because the edge dielectric loss that chemical mechanical polishing of tungsten causes is lower than middle; After chemical mechanical polishing of tungsten; Can reduce the flatness of medium again, thereby the grinding effect of medium cmp is produced bigger negative effect.Especially remarkable further in the small size device that planarization is had relatively high expectations is made.
[summary of the invention]
In view of this, be necessary the medium cmp to be produced big negative effect, reduce the problem of wafer medium (inter-level dielectric and metal interlayer medium) flatness, a kind of Ginding process that improves wafer medium flatness is provided to above-mentioned chemical mechanical polishing of tungsten.
In addition, a kind of lapping device that improves wafer medium flatness also is provided.
A kind of Ginding process comprises the steps:
The wafer medium is carried out the medium cmp;
Detect the grinding effect of medium cmp;
Confirm said wafer medium is carried out the grinding menu of chemical mechanical polishing of tungsten according to said grinding effect.
Preferably, the grinding menu of said medium cmp, the edge grinding rate is greater than center grinding rate.
Preferably, the grinding menu of said medium cmp, the edge grinding rate than big 300～500 dusts of center grinding rate/minute.
Preferably, saidly confirm that according to described grinding effect the step of said wafer medium being carried out the grinding menu of chemical mechanical polishing of tungsten is specially:
If the grinding effect that detects reaches preset amplitude, thickness and flatness, it is linear grinding menu that then said chemical mechanical polishing of tungsten adopts diameter grinding rate distribution curve; Otherwise said chemical mechanical polishing of tungsten adopts the grinding menu of said medium cmp.
A kind of lapping device comprises:
Medium cmp assembly is used for the wafer medium is carried out the medium cmp;
Detection module is used to detect the grinding effect of said medium cmp assembly;
The chemical mechanical polishing of tungsten assembly carries out chemical mechanical polishing of tungsten to wafer;
Control module is used for confirming that according to said grinding effect said chemical mechanical polishing of tungsten assembly carries out the grinding menu of chemical mechanical polishing of tungsten to said wafer.
Preferably, the grinding menu of said medium cmp, the edge grinding rate is greater than center grinding rate.
Preferably, the grinding menu of said medium cmp, the edge grinding rate than high 300～500 dusts of center grinding rate/minute.
Preferably, said grinding effect comprises amplitude, thickness and the flatness parameter of wafer medium; Said chemical mechanical polishing of tungsten adopts diameter grinding rate distribution curve when the preset amplitude of grinding effect, thickness and flatness be linear grinding menu; Otherwise said chemical mechanical polishing of tungsten adopts the grinding menu of said medium cmp.
Above-mentioned Ginding process and device; The grinding menu of the chemical mechanical polishing of tungsten of confirming according to the grinding effect of medium cmp to adapt; The medium cmp is assisted, keep and improve the grinding effect of medium cmp on the very big degree, both solved chemical vapour deposition deposit thin layer region skewness; Preceding value amplitude is big; The problem that the edge is thick keeps and has improved the flatness of wafer medium again, thus improved greatly semiconductor product performance and fine ratio of product.
[description of drawings]
Fig. 1 is the flow chart of Ginding process among the embodiment;
Fig. 2 is the structure chart of a lapping device among the embodiment.
[specific embodiment]
Below in conjunction with accompanying drawing, describe in detail through specific embodiments of the invention, will make technical scheme of the present invention and other beneficial effects obvious.
Fig. 1 is the flow chart of Ginding process among the embodiment, and this method comprises the steps:
S10: the wafer medium is carried out the medium cmp.
Because the thin layer of wafer chemical vapour deposition (CVD) deposit exists area distribution inhomogeneous; Preceding value amplitude (range) is big; Therefore the problem that the edge is thick carries out the medium cmp to this thin layer, and the grinding menu of adjustment medium cmp; Improve the edge grinding rate, make the edge grinding rate greater than center grinding rate.In preferred embodiment; The grinding menu of medium cmp; Diameter grinding rate distribution curve (Polish line profile), the edge grinding rate than big 300～500 dusts of center grinding rate/minute, preferably 400 dusts/minute; Strengthen grinding rate targetedly, to address the above problem to the crystal round fringes medium.
S20: the grinding effect that detects the medium cmp.
The wafer medium is carried out after the medium cmp; Grinding effect is detected,, analyze the wafer medium and whether reach preset amplitude, thickness and flatness parameter according to detecting data; Whether the grinding effect of judging the medium cmp is for having solved chemical vapour deposition deposit thin layer region skewness fully; Preceding value amplitude is big, and the problem that the edge is thick makes the flatness of wafer medium reach the requirement of producing.
S30: the grinding menu of confirming the wafer medium is carried out chemical mechanical polishing of tungsten according to the grinding effect that detects.
In one embodiment, confirm that according to grinding effect the step of the wafer medium being carried out the grinding menu of chemical mechanical polishing of tungsten is specially:
If the grinding effect that detects reaches preset amplitude, thickness and flatness, then chemical mechanical polishing of tungsten employing diameter grinding rate distribution curve is linear grinding menu; Otherwise said chemical mechanical polishing of tungsten adopts the grinding menu of medium cmp.
Behind the medium cmp; If grinding effect reaches preset amplitude, thickness and flatness, solved chemical vapour deposition deposit thin layer region skewness fully, preceding value amplitude is big; The problem that the edge is thick; This moment the having an even surface and wait highly of wafer medium, the medium flatness is good, satisfies the requirement of manufacturing.When carrying out chemical mechanical polishing of tungsten again; Need the flatness of medium be kept; Therefore it adopts diameter grinding rate distribution curve for linear grinding menu, makes its grinding rate to the every place of wafer medium identical, and the degree of grinding is identical everywhere with thickness; Thereby can keep and optimize the flatness of the grinding effect and the wafer medium of medium cmp, the grinding effect to the medium cmp does not form negative effect.
Behind the medium cmp,, then do not solved chemical vapour deposition deposit thin layer region skewness fully if grinding effect does not reach preset amplitude, thickness and flatness; Preceding value amplitude is big; During edge thick problem, the wafer dielectric surface still exists area distribution inhomogeneous, and preceding value amplitude is big; The problem that the edge is thick, the medium flatness can't satisfy the requirement of manufacturing.When carrying out chemical mechanical polishing of tungsten again; Need be inhomogeneous to the area distribution that still exists, preceding value amplitude is big, and the thick problem in edge is handled; So it adopts the grinding menu identical with the medium cmp (diameter grinding rate distribution curve edge is higher than middle); Further strengthen grinding rate targetedly, the grinding effect of medium cmp is carried out perfect, make the flatness of wafer medium satisfy the requirement of making the edge medium.
In addition, a kind of lapping device is provided.
Fig. 2 is the structure chart of a lapping device among the embodiment, and this lapping device comprises medium cmp assembly 210, detection module 220, control module 230 and chemical mechanical polishing of tungsten assembly 240.
Medium cmp assembly 210 is used for the wafer medium is carried out the medium cmp.
Because the thin layer of wafer chemical vapour deposition deposit exists area distribution inhomogeneous, preceding value amplitude is big, the problem that the edge is thick.In preferred embodiment; Medium cmp assembly 210 employed grinding menus, the edge grinding rate than big 300～500 dusts of center grinding rate/minute, preferably 400 dusts/minute; Strengthen grinding rate targetedly, to address the above problem to the edge medium.
Detection module 220 is used to detect the grinding effect of medium cmp assembly 210.
Wafer is after medium cmp assembly 210 medium cmps, and detection module 220 detects its grinding effect, according to detecting data; Analyze the wafer medium and whether reach preset amplitude, thickness and flatness parameter;, whether the grinding effect of judging medium cmp assembly 210 is for having solved wafer chemical vapour deposition deposit thin layer region skewness fully, and preceding value amplitude is big; The problem that the edge is thick makes the flatness of wafer medium reach the requirement of making.
Control module 230 confirms that according to the grinding effect that detection module 220 detects 240 pairs of wafer media of chemical mechanical polishing of tungsten assembly carry out the grinding menu of chemical mechanical polishing of tungsten.
Among this embodiment, grinding effect comprises amplitude, thickness and the flatness parameter of wafer medium.When if detection module 220 detected grinding effects reach preset amplitude, thickness and flatness; Then solved chemical vapour deposition deposit thin layer region skewness fully; Preceding value amplitude is big; The problem that the edge is thick, it is linear grinding menu that control module 230 control chemical mechanical polishing of tungsten assemblies 240 adopt diameter grinding rate distribution curve, and wafer is ground.Otherwise adjustment chemical mechanical polishing of tungsten assembly 240 adopts the grinding menu identical with the medium cmp, and wafer is ground.
If detection module 220 detected grinding effects reach preset amplitude, thickness and flatness; Then solved chemical vapour deposition deposit thin layer region skewness fully; Before the value amplitude big, during the thick problem in edge, the having an even surface and wait height of wafer medium; The medium flatness is good, satisfies the requirement of making.When chemical mechanical polishing of tungsten assembly 240 grinds again; Need the flatness of medium be kept; Therefore control it and adopt diameter grinding rate distribution curve for linear grinding menu, make its grinding rate to the every place of wafer medium identical, the degree of grinding is identical everywhere with thickness; Thereby can keep and optimize the flatness of the grinding effect and the wafer medium of medium cmp assembly 210, the grinding effect to medium cmp assembly 210 does not form negative effect.
If detection module 220 detected grinding effects do not reach preset amplitude, thickness and flatness; Then do not solved chemical vapour deposition deposit thin layer region skewness fully, preceding value amplitude is big, during the thick problem in edge; The wafer dielectric surface still exists area distribution inhomogeneous; Preceding value amplitude is big, the problem that the edge is thick, and the medium flatness can't satisfy the requirement of manufacturing.When chemical mechanical polishing of tungsten assembly 240 grinds again; Need be inhomogeneous to the area distribution that still exists, preceding value amplitude is big, and the thick problem in edge is handled; Control it and adopt the grinding menu identical (diameter grinding rate distribution curve edge is higher than middle) with the medium cmp; Further strengthen grinding rate targetedly, the grinding effect of medium cmp assembly 210 is carried out perfect, make the flatness of wafer medium satisfy the requirement of making the edge medium.
Chemical mechanical polishing of tungsten assembly 240 is used for the wafer medium is carried out chemical mechanical polishing of tungsten.
Above-mentioned Ginding process and device; The grinding menu of the chemical mechanical polishing of tungsten of confirming according to the grinding effect of medium cmp to adapt; The medium cmp is assisted, keep and improve the grinding effect of medium cmp on the very big degree, both solved chemical vapour deposition deposit thin layer region skewness; Preceding value amplitude is big; The problem that the edge is thick keeps and has improved the flatness of wafer medium again, thus improved greatly semiconductor product performance and fine ratio of product.
The above embodiment has only expressed embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the present invention's design, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with accompanying claims.
Claims (8)
1. a Ginding process comprises the steps:
The wafer medium is carried out the medium cmp;
Detect the grinding effect of medium cmp;
Confirm said wafer medium is carried out the grinding menu of chemical mechanical polishing of tungsten according to said grinding effect.
2. Ginding process according to claim 1 is characterized in that, the grinding menu of said medium cmp, and the edge grinding rate is greater than center grinding rate.
3. Ginding process according to claim 2 is characterized in that, the grinding menu of said medium cmp, the edge grinding rate than big 300～500 dusts of center grinding rate/minute.
4. according to any described Ginding process of claim 1-3, it is characterized in that, saidly confirm that according to described grinding effect the step of said wafer medium being carried out the grinding menu of chemical mechanical polishing of tungsten is specially:
If the grinding effect that detects reaches preset amplitude, thickness and flatness, it is linear grinding menu that then said chemical mechanical polishing of tungsten adopts diameter grinding rate distribution curve; Otherwise said chemical mechanical polishing of tungsten adopts the grinding menu of said medium cmp.
5. a lapping device is characterized in that, comprising:
Medium cmp assembly is used for the wafer medium is carried out the medium cmp;
Detection module is used to detect the grinding effect of said medium cmp assembly;
The chemical mechanical polishing of tungsten assembly carries out chemical mechanical polishing of tungsten to wafer;
Control module is used for confirming that according to said grinding effect said chemical mechanical polishing of tungsten assembly carries out the grinding menu of chemical mechanical polishing of tungsten to said wafer.
6. Ginding process according to claim 5 is characterized in that, the grinding menu of said medium cmp, and the edge grinding rate is greater than center grinding rate.
7. lapping device according to claim 6 is characterized in that, the grinding menu of said medium cmp, the edge grinding rate than high 300～500 dusts of center grinding rate/minute.
8. according to the arbitrary described lapping device of claim 5 to 7, it is characterized in that said grinding effect comprises amplitude, thickness and the flatness parameter of wafer medium; Said chemical mechanical polishing of tungsten adopts diameter grinding rate distribution curve when the preset amplitude of grinding effect, thickness and flatness be linear grinding menu; Otherwise said chemical mechanical polishing of tungsten adopts the grinding menu of said medium cmp.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105464659A CN102463521A (en) | 2010-11-16 | 2010-11-16 | Polishing method and device |
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| CN2010105464659A CN102463521A (en) | 2010-11-16 | 2010-11-16 | Polishing method and device |
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| CN102463521A true CN102463521A (en) | 2012-05-23 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108257885A (en) * | 2016-12-28 | 2018-07-06 | 无锡华润上华科技有限公司 | The application method of titanium or titanium nitride particles control wafer in physical vapour deposition (PVD) |
| CN113611625A (en) * | 2021-07-30 | 2021-11-05 | 上海华虹宏力半导体制造有限公司 | Method for monitoring tungsten residues on edge of wafer in tungsten CMP process |
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| US5665199A (en) * | 1995-06-23 | 1997-09-09 | Advanced Micro Devices, Inc. | Methodology for developing product-specific interlayer dielectric polish processes |
| CN1340210A (en) * | 1999-10-13 | 2002-03-13 | 皇家菲利浦电子有限公司 | Method and system for polishing semiconductor wafers |
| CN1448985A (en) * | 2002-04-01 | 2003-10-15 | 旺宏电子股份有限公司 | Semiconductor manufacturing system and process control method thereof |
| CN1574241A (en) * | 2003-06-16 | 2005-02-02 | 松下电器产业株式会社 | Semiconductor device fabrication method and semiconductor device fabrication system |
| CN1971874A (en) * | 2005-11-24 | 2007-05-30 | 上海华虹Nec电子有限公司 | Semiconductor back-end linked thread using glass contained F-Si as dielectric substance |
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2010
- 2010-11-16 CN CN2010105464659A patent/CN102463521A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5665199A (en) * | 1995-06-23 | 1997-09-09 | Advanced Micro Devices, Inc. | Methodology for developing product-specific interlayer dielectric polish processes |
| CN1340210A (en) * | 1999-10-13 | 2002-03-13 | 皇家菲利浦电子有限公司 | Method and system for polishing semiconductor wafers |
| CN1448985A (en) * | 2002-04-01 | 2003-10-15 | 旺宏电子股份有限公司 | Semiconductor manufacturing system and process control method thereof |
| CN1574241A (en) * | 2003-06-16 | 2005-02-02 | 松下电器产业株式会社 | Semiconductor device fabrication method and semiconductor device fabrication system |
| CN1971874A (en) * | 2005-11-24 | 2007-05-30 | 上海华虹Nec电子有限公司 | Semiconductor back-end linked thread using glass contained F-Si as dielectric substance |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108257885A (en) * | 2016-12-28 | 2018-07-06 | 无锡华润上华科技有限公司 | The application method of titanium or titanium nitride particles control wafer in physical vapour deposition (PVD) |
| CN108257885B (en) * | 2016-12-28 | 2021-01-05 | 无锡华润上华科技有限公司 | Use method of titanium or titanium nitride particle control wafer in physical vapor deposition |
| CN113611625A (en) * | 2021-07-30 | 2021-11-05 | 上海华虹宏力半导体制造有限公司 | Method for monitoring tungsten residues on edge of wafer in tungsten CMP process |
| CN113611625B (en) * | 2021-07-30 | 2024-02-02 | 上海华虹宏力半导体制造有限公司 | Method for monitoring edge tungsten residue in tungsten CMP process |
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Owner name: WUXI HUARUN SHANGHUA TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: WUXI CSMC SEMICONDUCTOR CO., LTD. Effective date: 20140411 Free format text: FORMER OWNER: WUXI HUARUN SHANGHUA TECHNOLOGY CO., LTD. Effective date: 20140411 |
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Effective date of registration: 20140411 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Applicant after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Applicant before: Wuxi CSMC Semiconductor Co., Ltd. Applicant before: Wuxi Huarun Shanghua Technology Co., Ltd. |
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Application publication date: 20120523 |