CN102460863A - Semiconductor laser device - Google Patents

Semiconductor laser device Download PDF

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Publication number
CN102460863A
CN102460863A CN201080013611XA CN201080013611A CN102460863A CN 102460863 A CN102460863 A CN 102460863A CN 201080013611X A CN201080013611X A CN 201080013611XA CN 201080013611 A CN201080013611 A CN 201080013611A CN 102460863 A CN102460863 A CN 102460863A
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band
cap rock
layer
semiconductor laser
area
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CN102460863B (en
Inventor
马克·施尔格雷安斯
阿尔弗雷德·莱尔
迪米特里·蒂尼
阿德里恩·斯蒂芬·阿朗姆梅斯科
克里斯托夫·艾克勒
迪泽尔·科尤恩
特里萨·罗曼
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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    • B82—NANOTECHNOLOGY
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    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
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    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
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    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
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    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H01S5/3063—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping using Mg
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A semiconductor laser device (1) is provided. It includes a first area (2), a second area, which has a flat region (4f) and a protrusion region (4g) that protrudes from the flat region (4f), and an active area (3), which is arranged between the first area (2) and the second area, where a cover layer (5, 5a, 5b), which includes a semiconductor material or a transparent conductive oxide, is arranged at least regionally directly on the protrusion region (4g) and protrudes laterally from the protrusion region (4g).

Description

Semiconductor laser apparatus
The application relates to a kind of semiconductor laser apparatus.
Present patent application requires the priority of German patent application 10 2,009 015 314.4, and its disclosure is incorporated into this by reference.
Optical Maser System based on AlGaInN becomes extremely important for technological for example laser projection, storage or printing technology in the future and the product that interrelates therewith.For the operation of basic mode laser, the laser structure with narrow laser stripes is favourable.Yet problematic in the case one side is the little joint face that links to each other with the narrow laser stripes p contact site, and is the low conductive capability that in GaN material system, occurs on the other hand.These factors can cause high operating voltage, high loss power and high ageing rate in based on the Optical Maser System of AlGaInN.
The task that therefore, solve is to propose a kind of semiconductor laser apparatus with improved electrical characteristics.
This task solves through the semiconductor laser apparatus according to claim 1.
The theme that the favourable expansion scheme of semiconductor laser apparatus and improvement project are dependent claims.
According to a preferred form of implementation, semiconductor laser apparatus comprises: the first area; District's band that second area, this second area have the flat region band and from the band of flat region, give prominence to; And active area, this active area is arranged between first area and the second area, and the cap rock that wherein comprises semi-conducting material or transparent conductive oxide is local at least to be set directly at outstanding district with going up and laterally exceeding said outstanding district's band.
Outstanding district's band is laterally exceeded through following mode by cap rock and obtains: the extending transversely of cap rock is greater than the extending transversely of outstanding district's band.The horizontal direction preferred vertical is in like lower direction: outstanding district's band on this direction from the flat region band outstanding.
Advantageously, the material that in cap rock, comprises conducts electricity, make cap rock also be the conduction and electric current can be injected in outstanding district's band through cap rock.So this cap rock can be as the articulamentum of second area.In order to electrically contact, conform with this cap rock of destination and be provided with metal level, this metal level especially have corresponding to or greater than the size of this cap rock.Through this cap rock and metal level than outstanding district's band bigger lateral dimension and the bigger joint face of getting in touch therewith; So can electric current be injected in outstanding district's band better because contact resistance reduces, make and to reduce operating voltage and loss power.
In addition, the cap rock of stretching, extension is compared with the cap rock on the traditional interarea that is limited to outstanding district's band, and the possibility of higher doping is provided, and makes and can reduce contact resistance equally thus.
Preferably; Semiconductor laser apparatus comprises the material based on nitride compound semiconductor; This representes in context of the present invention: at least one layer of semiconductor laser apparatus, especially first area, second area or active area comprise the nitride compound semiconductor material, preferred Al nGa mIn 1-n-mN (abbreviation: AlGaInN), 0≤n≤1,0≤m≤1 and n+m≤1 wherein.At this, this material needn't necessarily have according to following formula accurate component on mathematics.Or rather, it can have one or more dopant materials and additional part, and they do not change Al basically nGa mIn 1-n-mThe typical physical characteristic of N material.And from simple and clear reason, following formula only comprise lattice chief component (Al, Ga, In, N), even these parts can replace through a spot of other materials.
Especially, cap rock comprises the material based on the nitride compound semiconductor material.
In addition, this cap rock can comprise the perhaps combination of different transparent conductive oxides of transparent conductive oxide.Transparent conductive oxide (transparent conductive oxides is abbreviated as " TCO ") is transparent electric conducting material, normally metal oxide, such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or tin indium oxide (ITO).Except binary metal oxide compound such as ZnO, SnO 2Or In 2O 3Outside, ternary metal oxide compound such as Zn 2SnO 4, CdSnO 3, ZnSnO 3, MgIn 2O 4, GaInO 3, Zn 2In 2O 5Or In 4Sn 3O 12Or the mixture of different transparent conductive oxides also belongs to TCO family.In addition, TCO might not be corresponding to the component on the Chemical Measurement but also can p be mixed or n mixes.
According to a preferred variant that is used to make semiconductor laser apparatus, epitaxial growth one after the other has first area, active area and second area on substrate.Especially, epitaxial growth is carried out by metal organic vapor (MOVPE) or by molecular beam epitaxy (MBE).Second area can be by structuring after epitaxial growth, and especially etching makes to make up flat region band and outstanding district's band.Especially, outstanding district's band has the configuration of strip, that is to say outstanding district's band have longitudinal extension, in cross section preferred trapezoidal configuration.
Second area can be provided with the various structure degree of depth.If outstanding district's band is made by etching, then constructional depth is corresponding to etching depth.
Second area is the outer shell of structuring to semiconductor laser apparatus only for example.Advantageously, can avoid damage in the ducting layer under it thus.Yet current expansion is than bigger under the situation of the constructional depth that reaches active layer in the case.
At this, therefore consider the various structure degree of depth according to the requirement of noise spectra of semiconductor lasers device.
In one of semiconductor laser apparatus favourable expansion scheme, this cap rock extension ground growth.Advantageously, the outstanding district's band of manufacturing that is grown in of this cap rock carries out afterwards.This cap rock can be grown to and make it cover the interarea of outstanding district's band especially fully and extend beyond outstanding district's band in a lateral direction.
For example, outstanding district's band can come outgrowth with semi-conducting material by MOVPE in two steps.Two growth steps especially before the mask that is used to make outstanding district's band is peeled off with carry out afterwards.Advantageously, can make up the layer of different electricity and optical characteristics, make the cap rock form by these layers also can have different electricity and optical characteristics through the outgrowth in two steps.For example, the bottom part layer of the side adjacency of cap rock and outstanding district's band can comprise following material: this material has low conductivity and has the refractive index that is suitable for the single-mode laser operation or high absorptivity.In addition, the material that top part layer cap rock and interarea adjacency district's band of giving prominence to can have high conductivity is used for optimum electrically contacting.In addition, the superlattice that in cap rock, can be built with superlattice, especially constitute by AlInGaN/AlInGaN.
Can be as an alternative, this cap rock can produce by MBE or HVPE (gaseous mixture phase epitaxy).Advantage in these methods is and the lower hydrogen input of comparing through the manufacturing of MOVPE to laser structure, makes to be different from MOVPE, the activation that need not add.
One can deformation program for choosing in, cap rock is evaporated, sputter, spin coating or make through ion plating.This with compare by the outgrowth of MOVPE so complicated.Lower depositing temperature can advantageously reduce defective in active area, that temperature causes.Especially, this cap rock is through depositing a kind of TCO or different TCO forms.Advantageously, in comprising the cap rock of TCO, reduced current expansion.
According to a preferred expansion scheme of semiconductor laser apparatus, the first area is first conduction type and second area is second conduction type.Especially, the first area is the n conduction, and second area is the p conduction.
In addition, nominally second area can lie at least partially in is unadulterated.Because minimum n conductivity appears in defective in the material in the case.
The active area that is arranged between first area and the second area especially is provided for producing radiation and has the pn knot.This pn knot can form by the semiconductor layer of p conduction and the layer of n conduction under the simplest situation, and they directly are adjacent to each other.Preferably, between the layer that the layer and the n of p conduction conduct electricity, make up the structure that produces actual emanations, for example with form that mix or unadulterated quantum structure.Quantum structure can be constructed as single quantum (SQW, Single Quantum Well) or multi-quantum pit structure (MQW, Multiple Quantum Well), or also is configured to quantum wire or quantum-dot structure.
In one of semiconductor laser apparatus favourable form of implementation, cap rock extends the side of at least extremely outstanding district's band from the interarea of outstanding district's band.Especially, the form fit of this cap rock and outstanding district's band that is to say that this cap rock also can have the configuration of strip.
According to an expansion scheme of semiconductor laser apparatus, the flat region band of second area is provided with passivation layer.This passivation layer advantageously comprises the nitride of the material of electric insulation, especially electric insulation such as oxide such as silica, zirconia, aluminium oxide or the hafnium oxide of silicon nitride or aluminium nitride or electric insulation.These materials are being specially suitable aspect its refractive index, because by the refractive index saltus step that between the second area of passivation layer and adjacency, occurs thus, the operation of the laser of index guide structure is possible.In addition, outstanding district's band can realize that the laser that obtains to gain moves.
In a favourable expansion scheme, cap rock extends to passivation layer along side.Especially, this cap rock covers the contact layer of the district's band that belongs to outstanding in the case, and this contact layer is towards this cap rock.Contact-making surface between cap rock and contact layer therefore with the situation of the interarea that only is applied to outstanding district's band under compare bigger.Therefore, improved electrically contacting between this cap rock and contact layer.And passivation layer at first be not to be designed for the zone that electric current injects advantageously, and for example in the zone of outer shell or in the zone like lower waveguide layer: this ducting layer is arranged on the side that deviates from cap rock of contact layer.
For the higher pattern that decays, cap rock can at least partly be configured to absorber.The absorptivity of cap rock can be regulated through the material component that changes in this cap rock.
In another expansion scheme, cap rock extends to the band of flat region from interarea.Cap rock can only partially or completely hide the flat region band.In this expansion scheme, therefore not only can but also can electric current be injected in the semiconductor laser apparatus through outstanding district's band through the flat region band.
When hiding the flat region band fully, can passivation layer be arranged on the cap rock in the edge region through cap rock.Can be as an alternative, can be not covered in the band edge region of flat region.In two forms of implementation, can save additional electric current and stop layer.
According to another form of implementation, between second area and cap rock, be provided with electric current and stop layer.Electric current stops layer and can be at least partially disposed on the band of flat region.In addition, electric current stops layer and can extend the side until outstanding district's band.
Electric current stops layer poorly conductive or electric insulation, makes insignificant electric current this electric current of flowing through stop layer.For example, electric current stop the layer can comprising dielectric material.In addition, electric current stop the layer can comprising for example AlN of nitride.In addition, electric current stops layer and can form by the semiconductor layer of the doping of unadulterated semiconductor layer, first conduction type or by the semiconductor layer of the weak doping of second conduction type.Especially, electric current stops a layer extension ground growth.
Electric current stops layer and advantageously comprises following material: its refractive index is different from the refractive index of the second area of adjacency, makes that especially the laser operation of index guide structure is possible.
In addition, electric current stops layer and can be built with following thickness: the outstanding district's band or the damage and the defective that are caused by structuring of flat region band are compensated under the situation of this thickness.
In addition, electric current stop the layer can protecting the side of outstanding district's band to avoid quick aging.
As mentioning, on the border of cap rock, has contact layer according to outstanding district's band of a favourable form of implementation.The directly local at least and cap rock adjacency of contact layer.Preferably, contact layer is second conduction type.Especially, contact layer is the p conduction.For example, contact layer can comprise the GaN that p mixes.
In addition, district's band of giving prominence to can have the outer shell with the contact layer adjacency.Outer shell is second conduction type preferably.Outer shell can be formed by the AlInGaN that p mixes.
According to a preferred expansion scheme, cap rock is as other contact layer.Especially, cap rock can comprise with its under the contact layer identical materials.
Below described the form of implementation of semiconductor laser apparatus, these forms of implementation have tunnel junction.Preferably, tunnel junction is provided for electrically contacting second area.Especially, tunnel junction is arranged in outstanding district's band.
It should be understood that following described expansion scheme also can be applied in the semiconductor laser apparatus of not being with tunnel junction, vice versa.
According to a preferred expansion scheme, tunnel junction forms by the highly doped layer of first conduction type and the highly doped layer of second conduction type.Therefore, second area is second conduction type discontinuously also.Or rather, second area only the part be second conduction type.It should be noted that the semiconductor layer of tunnel junction might not evenly mix, because be enough to form tunnel junction highly doped on the boundary face of corresponding other semiconductor layers.
In a favourable improvement project; Tunnel junction be arranged on first conduction type the layer with second conduction type layer between; The layer of wherein preferred first conduction type is arranged on the side that deviates from active area of tunnel junction, and the layer of second conduction type is arranged on the side of active area.In addition, preferably the layer of first conduction type comprises the GaN that n mixes, and the layer of second conduction type has the GaN that p mixes.Especially, two layers are in outstanding district's band.Therefore, tunnel junction is embedded in outstanding district's band.
Tunnel junction through use is buried underground can advantageously save the layer that magnesium mixes on outstanding district's band.Thus, what can realize is less aging effect on the side of outstanding district's band, in semiconductor laser apparatus, occurs, otherwise it to be caused by the diffusion of magnesium.In addition, optical absorption and series resistance have been reduced thus.
According to a preferred expansion scheme, this cap rock is first conduction type, and wherein cap rock is local at least is set directly at outstanding district with going up and laterally exceeding outstanding district's band.
Particularly preferably, growing into to the cap rock extension outstanding district is with.
Cap rock can be applied on the band of flat region, makes to be filled up by this cap rock except outstanding district's band through the structuring area exposed.
For example, this cap rock can comprise the AlInGaN that n mixes, and especially the AlGaN of the AlInN of n doping or n doping perhaps is made up of it.Can be as an alternative, this cap rock can comprise the TCO of n doping or be made up of it.
Under the simplest situation, cap rock is formed by a kind of material continuously.
Yet also possible is that cap rock makes up unevenly, makes it have material different.
For example, cap rock can be made up of the layer of different electrology characteristics and optical characteristics.Especially, the bottom part layer with flat region band adjacency of cap rock can comprise the refractive index materials that has low conductivity and be suitable for decaying higher mode.In addition, the top part layer with interarea adjacency district's band of giving prominence to cap rock can have the high conductivity that is used for excellent electric contact.For example, the bottom part layer can comprise electrical insulating material, the especially nitride of the oxide of electric insulation such as silica or electric insulation such as silicon nitride, or constitute by it.And the top part layer can be formed by the TCO that electric conducting material such as n mix.In addition, the bottom part layer can be formed by semi-conducting material such as unadulterated AlGaN, and the top part layer equally can be by semi-conducting material, and the GaN that AlInGaN, the especially n that mixes like n mixes forms.
Yet also possible is, in cap rock different semiconductor layer, for example a plurality of AlInGaN layers with the material different component, especially alternately with different indium content or different doping.In addition, be contemplated that material component is the indium content or the ground change continuously from the layer to the layer of mixing especially.In addition, in cap rock, be provided with superlattice, the superlattice that especially constitute by AlInGaN/AlInGaN.
In a favourable deformation program, the flat region band is provided with absorber in order to decay higher mode.This absorber for example can be applied directly on the band of flat region with the form of structurized layer.
According to a preferred improvement project, between second area and cap rock, be provided with electric current and stop layer.This electric current stops the side that layer for example can extend to outstanding district's band from the flat region band.Thus, side can be protected in order to avoid quick aging.
In a preferred expansion scheme, the side that deviates from outstanding district's band of cap rock is provided with contact layer.Preferably, cap rock is hidden by whole ground of contact layer.Contact layer for example can comprise the GaN of n doping or be made up of it.
In addition preferably, cap rock has smooth interarea on the side that deviates from outstanding district's band.Cap rock this not with the form fit of outstanding district's band.It especially has the bigger surface of interarea than outstanding district's band on the side that deviates from outstanding district's band.Therefore the contact layer that is arranged on the cap rock has the bigger surface of interarea than outstanding district's band equally.Thus, advantageously increased the joint face of semiconductor laser apparatus.
Preferably, cap rock is used as outer shell in the semiconductor laser apparatus that has the tunnel junction of burying underground.
Other advantages and favourable expansion scheme draw from the elaboration below in conjunction with Fig. 1 to 17.
Wherein:
Fig. 1 to 8 shows the schematic cross-sectional view according to the different embodiment of the semiconductor laser apparatus of first deformation program of the present invention,
Fig. 9 to 17 shows the schematic cross-sectional view according to the different embodiment of the semiconductor laser apparatus of second deformation program of the present invention.
In these embodiment and accompanying drawing, part identical or same function is provided with identical Reference numeral.
Fig. 1 shows the schematic cross-sectional view according to first embodiment of the semiconductor laser apparatus 1 of first deformation program of the present invention.
Semiconductor laser apparatus 1 has first area 2 and second area, is provided with the active area 3 that is used to produce radiation betwixt.Preferably, first area 2 be n conduction and second area is the p conduction.Second area also can be only local p mix and nominally all the other do not mix or even n mix, make its part n conduct electricity.Active area 3 especially makes up with the form of quantum structure, and this quantum structure can not mix or mix.In the case, between two quantum well layers, be provided with barrier layer respectively.Preferably, active area 3 is between two ducting layers.
First area 2, active area 3 and second area have the material based on nitride compound semiconductor, that is to say that it especially comprises AlGaInN.
After active area 3, be provided with the semiconductor layer 4a and the 4c that belong to second area.Especially, two semiconductor layer 4a, 4c comprise the GaN that p mixes.Preferably, two semiconductor layer 4a and 4c are used for the ripple guiding.Particularly preferably, two semiconductor layer 4a are different on doping level with 4c, wherein especially semiconductor layer 4a than semiconductor layer 4c less p mix.For example, nominally semiconductor layer 4a can not mix.
In addition, second area comprises that electronics stops a layer 4b, and this electronics stops layer and is arranged between two semiconductor layer 4a, the 4c and will prevents to be injected into electronics in the first area 2 and cross far and penetrate in the second area.For example, electronics stops layer 4b and can comprise AlGaInN.In addition, electronics stops the preferred p doping of layer 4b.Especially, electronics stops layer 4b and can be formed by the AlGaN that p mixes.
As learning from Fig. 1, second area is made it have flat region band 4f and the outstanding district band 4g of band 4f from the flat region by structuring.Especially, outstanding band 4g strip ground, district make up and have microscler extension, be trapezoidal configuration in cross section.Through outstanding district band 4g, gain guided laser operation is possible.
Outstanding district band 4g is comprising outer shell 4d on the side of active area 3, and on the side that deviates from active area 3, comprises contact layer 4e.Preferably, outer shell 4d comprises the AlGaN that p mixes, and contact layer 4e is formed by the GaN that p mixes.In addition, outer shell 4d can have the superlattice that are made up of AlInGaN/AlInGaN.In addition, not only contact layer 4e but also outer shell 4d can be formed by the TCO that p mixes.
Second area comprises that semiconductor layer 4a, 4c, electronics stop a layer 4b, outer shell 4d and contact layer 4e.
Outstanding district band 4g is provided with cap rock 5.Local with the outstanding at least district band 4g of this cap rock directly contacts.Outstanding district band 4g is laterally exceeded by cap rock 5.
In the embodiment shown in Fig. 1, the form fit of cap rock 5 and outstanding district band 4g that is to say that cap rock also has configuration strip, microscler extension.
Cap rock 5 extends until its side from the interarea of outstanding district band 4g.Cap rock 5 especially contacts with contact layer 4e at side.
Advantageously, cap rock 5 have with its under contact layer 4e identical materials, between cap rock 5 and contact layer 4e, make up good electrical contact thus.Especially, cap rock 5 comprises the GaN that p mixes.Can be as an alternative, cap rock 5 can be formed by the TCO that p mixes.
Between cap rock 5 and second area, there is passivation layer 6.Passivation layer is arranged on the band 4f of flat region and reaches contact layer 4e, and wherein the side of outer shell 4d is passivated layer 6 covering.Passivation layer 6 can be realized the laser operation of index guide structure.Passivation layer 6 can comprise nitride such as the silicon nitride or the aluminium nitride of the material of electric insulation, especially electric insulation, or comprises oxide such as silica, zirconia, aluminium oxide or the hafnium oxide of electric insulation.
On the unsheltered surface of cap rock 5, especially can apply the articulamentum (not shown) that constitutes by metal in whole ground.Semiconductor laser apparatus 1 has the contact site than larger area p in the case.Compare to the ridge laser (Ridgelaser) between the 2 μ m at 1 μ m with traditional ridge width, in semiconductor laser apparatus shown in Figure 11, can advantageously reduce contact resistance and operating voltage.In addition, the possibility that the cap rock 5 of stretching, extension provides higher p to mix makes and also can reduce contact resistance thus.
For the semiconductor laser apparatus 1 shown in the shop drawings 1, first area 2, active area 3 and second area grow into to extension (not shown) on the substrate that is suitable for this in succession.Subsequently, second area is made it have flat region band 4f and the outstanding district band 4g of band 4f from the flat region by structuring.Especially, the etching second area is used to make outstanding district band 4g.
Preferably, second area is removed until the p ducting layer, so that make up outstanding district band 4g.Yet also possible is that second area is removed only to outer shell 4d.In the case, although estimate that bigger current expansion is arranged, yet less damage appears in the p ducting layer for this reason.
Can be as an alternative, can second area be peeled off until electronics and stop layer 4b or even until active area 3.Advantageously, the less current expansion appears in this case.
After making outstanding district band 4g, passivation layer 6 is applied on the band 4f of flat region.
In follow-up step, contact layer 4e can be with cap rock 5 outgrowth.
Fig. 2 shows the schematic cross-section according to second embodiment of the semiconductor laser apparatus 1 of first deformation program of the present invention.
The similar structures that has semiconductor laser apparatus as shown in fig. 1 according to the semiconductor laser apparatus 1 of Fig. 2.Yet passivation layer 6 does not reach contact layer 4e.This passivation layer is with the only part covering of side of outer shell 4d.Be connected on cap rock 5 after the passivation layer 6 and also hide the zone of outer shell 4d.
In this case, the cap rock 5 that is arranged on the side can be as the absorber of decay higher mode.
In addition, the semiconductor laser apparatus shown in Fig. 21 can have all the combination described advantage of Fig. 1 and expansion scheme.
Compare with the embodiment of Fig. 1 and 2, third and fourth embodiment of the semiconductor laser apparatus 1 shown in Fig. 3 and 4 does not have passivation layer between second area and cap rock 5.Cap rock 5 extends to the band 4f of flat region along side from the interarea of outstanding district band 4g.This cap rock 5 can be used as absorber in the case.
Especially, in this embodiment, outer shell 4d comprises AlInGaN.For example, the second semiconductor layer 4c can have the GaN that p mixes, and outer shell 4d is formed by the AlInGaN that p mixes.Possible in addition is, the second semiconductor layer 4c comprises the InGaN that p mixes, and outer shell 4d has the AlInGaN that p mixes.
In the case, in the refringence between cap rock 5 and the outstanding district band 4g less than in the refringence between typical passivation layer and the district band 4g that gives prominence to.Therefore, in the embodiment of Fig. 3 and 4, the embodiment situation of laser operating ratio Fig. 1 and 2 of index guide structure is more difficult to be realized.Improvement can be through the passivation layer 6 of (referring to Fig. 3) in the fringe region that is applied to cap rock 5 or through the cap rock 5 and the marginating compartment (referring to Fig. 4) of semiconductor laser apparatus 1 are realized.In addition, in these forms of implementation, can save additional electric current and stop layer.
Fig. 5 shows the 5th embodiment of semiconductor laser apparatus 1.In the case, cap rock 5 extends to flat region band 4f from the interarea of outstanding district band 4g along side and directly contacts with the second semiconductor layer 4c.On the side of outstanding district band 4g, under cap rock 5, be provided with current sheet and stop 7, it reaches flat region band 4f.The outstanding district band 4g of this protection avoids strong degeneration and has improved the laser operation of index guide structure in addition.
Electric current stops layer 7 can comprise dielectric material.In addition, electric current stops layer and 7 can comprise nitride such as AlN.In addition, it can be unadulterated or the semiconductor layer of n doping that electric current stops layer 7, its extension ground growth.
Embodiment shown in Fig. 5 can revise according to the embodiment of Fig. 3 and 4, that is to say, cap rock 5 can be provided with passivation layer 6 in the edge region, or flat region band 4f can keep not hidden by cap rock 5 in the edge region.
In the 6th embodiment of semiconductor laser apparatus shown in Figure 61, between cap rock 5 and flat region band 4f, be provided with electric current and stop layer 7.This electric current stops a layer non-major part that directly contacts and only hide outstanding district band 4g with the second semiconductor layer 4c.In this embodiment, outer shell 4d comprises AlInGaN.Especially, outer shell 4d can be formed by the AlInGaN that p mixes.
Stopping layer 7 through electric current makes semiconductor layer 4c insulate well with respect to cap rock 5.The side ground that current flowing can be passed outstanding district band 4g carries out.Stop layer 7 by especially epitaxially grown electric current, can cover damage or other unevennesses of causing through the structuring second area.
Embodiment shown in Fig. 6 also can revise according to the embodiment of Fig. 3 and 4, that is to say, cap rock 5 can be provided with passivation layer 6 in the edge region, or flat region band 4f can keep not hidden by cap rock 5 in the edge region.
In the 7th embodiment of semiconductor laser apparatus shown in Figure 71, between cap rock 5 and flat region band 4f semiconductor laser apparatus 1 that kind as shown in figure 6 be provided with electric current stop the layer 7.Additionally, electric current stops the side that layer 7 hides outstanding district band 4g in the case.In this embodiment, outer shell 4d does not contain indium.Especially, outer shell 4d can be formed by the AlGaN that p mixes.
Embodiment shown in Fig. 7 also can revise according to the embodiment of Fig. 3 and 4, that is to say, cap rock 5 can be provided with passivation layer in the edge region, or flat region band 4f can keep not hidden by cap rock 5 in the edge region.
In the 8th embodiment of semiconductor laser apparatus shown in Figure 81; This semiconductor laser apparatus has electric current and stops layer 7 between cap rock 5 and flat region band 4f; And electric current stops layer 7 extends to outstanding district band 4g through side interarea therein; Outer shell 4d does not contain indium, and the AlGaN that is especially mixed by p forms.Electric current stops layer 7 and can be formed by AlGaN.Especially, electric current stop layer 7 in this embodiment in the zone of the interarea of outstanding district band 4g p mix.Preferably, select less than 5 * 10 17/ cm 3Doping.Can use Mg as the p dopant material.For example, electric current stop layer 7 and the zone interarea adjacency can be through from diffusing out of contact layer 4e and with the enrichment of p dopant material.
This cap rock 5 advantageously is configured to absorber in the part.
Embodiment shown in Fig. 8 also can revise according to the embodiment of Fig. 3 and 4, that is to say, cap rock 5 can be provided with passivation layer in the edge region, or flat region band 4f can keep not hidden by cap rock 5 in the edge region.
Except described difference, can have all at the semiconductor laser apparatus shown in Fig. 3 to 81 and combine described advantage of Fig. 1 and expansion scheme.
Fig. 9 shows the schematic cross-sectional view according to first embodiment of the semiconductor laser apparatus 1 of second deformation program of the present invention.
Semiconductor laser apparatus 1 has first area 2 and second area, between them, is provided with the active area 3 that is used to produce radiation.Preferably, first area 2 is n conductions.Second area part at least is the p conduction.Active area 3 especially makes up with the quantum structure form, and this quantum structure can not mix or mix.In the case, between two quantum well layers, be provided with barrier layer respectively.Preferably, active area 3 is between two ducting layers.
First area 2, active area 3 and second area advantageously have the material based on nitride compound semiconductor, that is to say, it especially comprises AlGaInN.
After active area 3, be provided with the semiconductor layer 4a and the 4c that belong to second area.Especially, two semiconductor layer 4a, 4c comprise the GaN that p mixes.In addition, nominally for example semiconductor layer 4a can not mix.In addition, second area comprises that the electronics that is arranged between these two semiconductor layer 4a, the 4c stops a layer 4b, and this electronics stops layer electronics that will prevent to be injected in the first area 2 and penetrates in the second area far away excessively.As combine Fig. 1 mentioned, semiconductor layer 4a, 4c are particularly useful for ripple guiding.
As from learning Fig. 9,, make it have flat region band 4f and the outstanding district band 4g of band 4f from the flat region with the second area structuring.Especially, outstanding band 4g strip ground, district structure and have microscler extension, in cross section trapezoidal configuration.Through outstanding district band 4g, realized the laser operation of gain guiding.
Outstanding district band 4g is comprising the 3rd semiconductor layer 4h on the side of active area 3, and on the side that deviates from active area 3, has the 4th semiconductor layer 4j.Preferably, the 3rd semiconductor layer 4h comprises the GaN that p mixes, and the 4th semiconductor layer 4j is formed by the GaN that n mixes.
Between the 3rd semiconductor layer 4h and the 4th semiconductor layer 4j, be provided with tunnel junction 4i.Tunnel junction 4i is embedded among the outstanding district band 4g.Tunnel junction 4i can form by the layer of highly doped p conductive layer and highly doped n conduction.Tunnel junction through use is buried underground can advantageously save magnesium-doped layer on outstanding district band 4g.This causes lower aging effect on the side of outstanding district band 4g, in semiconductor laser apparatus 1, occurring, otherwise aging effect can cause through the magnesium diffusion.In addition, reduce optical absorption and series resistance thus.
Second area comprises semiconductor layer 4a, 4c, 4h and 4j and tunnel junction 4i.In addition, second area comprises that electronics stops a layer 4b.
Outstanding district band 4g is provided with cap rock 5.This cap rock hides interarea and the side of outstanding district band 4g.Outstanding district band 4g crosses out from cap rock 5.
The form fit of cap rock 5 and outstanding district band 4g.Or rather, cap rock 5 is applied on the band 4f of flat region, makes that area exposed is filled up with cap rock 5 except outstanding district band 4g through structuring.This cap rock 5 extends to flat region band 4f and preferably hides this flat region band fully from the interarea of outstanding district band 4g.
On the side that deviates from outstanding district band 4g, cap rock 4 has smooth interarea.Smooth interarea is advantageously greater than the interarea of outstanding district band 4g.
Preferably, cap rock 5 is n conductions.Cap rock can be formed by the AlInGaN that n mixes, and the AlGaN or the AlInN that are for example mixed by n form.Especially, cap rock 5 is as outer shell.
The smooth interarea of this cap rock 5 is provided with contact layer 8.In the embodiment shown in fig. 9, cap rock 5 is hidden by contact layer 8 fully.This can be implemented in the good electrical contact between cap rock 5 and the contact layer 8.For example, contact layer 8 can comprise the GaN that n mixes.
Especially, the articulamentum (not shown) that is made up of metal can be applied on the unsheltered surface of contact layer 8 on whole ground.Semiconductor laser apparatus 1 has large-area p side contacts portion in the case.
For the semiconductor laser apparatus 1 shown in the shop drawings 9, first area 2, active area 3 and second area one after the other are epitaxially grown to (not shown) on the substrate that is suitable for this.Subsequently, second area is by structuring, make its have flat region band 4f and and from the flat region the outstanding district band 4g of band 4f.Especially, second area is etched and is used to make outstanding district band 4g.
Preferably, second area is removed until the p ducting layer, so that make up outstanding district band 4g.Yet also possible is that second area only is removed to the 3rd semiconductor layer 4d.In the case, although estimate that bigger current expansion is arranged, yet less damage has been appearred in the p ducting layer for this.Can be as an alternative, can second area be peeled off until electronics and stop layer 4b or even until active area 3.Advantageously, the less current expansion appears in this case.
After making outstanding district band 4g, smooth district band 4f and outstanding district band 4g can be with cap rock 5 outgrowth.This outgrowth can be undertaken by MOVPE, HVPE or MBE.Advantageously, cap rock 5 can apply with the mode of no hydrogen in the case under the situation of the mentioned method in two back, and making does not have hydrogen to be diffused in the layer of highly doped p conduction of tunnel junction 4i.And under situation about making by MOVPE, hydrogen can invade among the tunnel junction 4i, can make highly doped p conductive layer passivation thus.
After making cap rock 5, can contact layer 8 be epitaxially grown on the smooth interarea of cap rock 5.
Figure 10 shows the schematic cross-sectional view according to second embodiment of the semiconductor laser apparatus 1 of second deformation program of the present invention.
Semiconductor laser apparatus 1 according to Figure 10 has and the similar structure of the semiconductor laser apparatus shown in Fig. 9.Yet the second area of semiconductor laser apparatus 1 additionally comprises mark layer 4k.This mark layer 4k is designed for the position of mark tunnel junction 4i, makes to show during the structuring second area which kind of degree structuring must proceed to.Thus, can realize the accurate control structure degree of depth.
After structuring, mark layer 4k is the part of the district band 4g that gives prominence to, and preferably is between the 3rd semiconductor layer 4h and the tunnel junction 4i.For example, mark layer 4k can comprise the AlGaInN that p mixes, especially the AlGaN of p doping.
In addition, the semiconductor laser apparatus shown in Figure 10 1 can have all the combination described advantage of Fig. 9 and expansion scheme.
Figure 11 shows the schematic cross-sectional view according to the 3rd embodiment of the semiconductor laser apparatus 1 of second deformation program of the present invention.
Semiconductor laser apparatus 1 according to Figure 11 has and the similar structure of the semiconductor laser apparatus shown in Fig. 9.Yet that kind is formed by a kind of material system continuously among cap rock 5 embodiment not as shown in fig. 9.Or rather, material component can change in this cap rock 5.This can realize in a different manner.
For example, cap rock 5 can be made up of a plurality of AlInGaN layers, its indium content.Additionally, n mixes and can change.Different component or the layer that mixes can replace.Can be as an alternative, the component of layer or doping can change continuously.At last, cap rock 5 can have the superlattice that are made up of AlInGaN/AlInGaN.
In the cap rock with uneven material component 5, advantageously, refractive index can irrespectively be regulated with lattice constant.Especially, cap rock 5 can be that is to say under stressless situation to be applied in by lattice match.
Semiconductor laser apparatus 1 shown in Figure 11 can have all and combine described advantage of Fig. 9 and expansion scheme except described difference.
Figure 12 shows the schematic cross-sectional view according to the 4th embodiment of the semiconductor laser apparatus of second deformation program of the present invention.
Semiconductor laser apparatus 1 according to Figure 12 has and the similar structure of semiconductor laser apparatus shown in Figure 9.Yet cap rock 5 embodiment that kind not as shown in fig. 9 is formed by semi-conducting material.Or rather, cap rock 5 has TCO, and it is that n mixes.At this, can save additional contact layer.On this cap rock 5, can directly be provided with the articulamentum that constitutes by metal.
Compare with the cap rock of making by MOVPE, the deposition that comprises the cap rock 5 of TCO forms more without difficultyly.In addition, can reduce temperature causes, the defective in active area 3 especially through lower depositing temperature.
Semiconductor laser apparatus 1 shown in Figure 12 can have all and combine described advantage of Fig. 9 and expansion scheme except described difference.
Figure 13 shows the schematic cross-section according to the 5th embodiment of the semiconductor laser apparatus 1 of second deformation program of the present invention.
As shown in Figure 9 embodiment is such, has the cap rock 5 that is made up of semi-conducting material according to the semiconductor laser apparatus 1 of Figure 13, is grown in to the preferred extension of this cap rock on flat region band 4f and the district band 4g that gives prominence to.
Between cap rock 5 and second area, be provided with passivation layer 6.This passivation layer advantageously comprises the oxide of electric insulation, especially silica.In addition, passivation layer 6 can be formed by the nitride such as the silicon nitride of electric insulation.Band 4f extends to the side of outstanding district band 4g to passivation layer 6 from the flat region, and wherein preferably, flat region band 4f and side all not exclusively are passivated layer and hide.
In the zone of side, between passivation layer 6 and cap rock 5, be provided with air gap 9.By refractive index saltus step that cause thus, on from passivation layer 6 or second area to the transition part of air gap 9, can realize the good optical guiding.
Air gap 9 for example can produce through following mode: cap rock 5 grows on the zone of flat region band 4f and the district band 4g that gives prominence to; It allows the growth of crystallization; And because passivation layer 6 typical unbodied materials can not be realized the growth of material fit in this zone, and therefore make up air gap 9.
Semiconductor laser apparatus 1 shown in Figure 13 can have all and combine described advantage of Fig. 9 and expansion scheme except described difference.
Figure 14 shows the schematic cross-section according to the 6th embodiment of the semiconductor laser apparatus 1 of second deformation program of the present invention.
Semiconductor laser apparatus 1 according to Figure 14 has and the similar structure of the semiconductor laser apparatus shown in Fig. 9.Yet flat region band 4f is provided with absorber 10.Absorber 10 is applied on the band 4f of flat region with the form of structurized layer.Advantageously, by the absorber 10 higher pattern that can decay, make that the laser operation in basic mode is possible.The material that is suitable for absorber 10 for example is to have high-melting point metal such as W, Ta, Re, Rh or Pt.In addition, can advantageously use dielectric material like silicon oxide compounds.
Semiconductor laser apparatus 1 shown in Figure 14 can have all and combine described advantage of Fig. 9 and expansion scheme except described difference.
Figure 15 shows the schematic cross-sectional view according to the 7th embodiment of the semiconductor laser apparatus 1 of second deformation program of the present invention.
In this embodiment, the constructional depth beguine is bigger according to the situation of the embodiment described above of second deformation program.Second area passes electronics to be stopped a layer 4b and is stripped from almost up to active area 3.Advantageously, can reduce current expansion consumingly by bigger constructional depth.
On the band 4f of flat region and the side of outstanding district band 4g be provided with electric current and stop layer 7.The passivation of the district band 4g that this can realize giving prominence to, it is because bigger constructional depth and occur electricity question more easily.Electric current stops layer 7 and advantageously comprises the AlInGaN with high Al ratio.Electric current stop that layer 7 can not mix, n mixes or slightly p mix.
Cap rock is made up of two different portions layer 5a and 5b.Bottom part layer 5a hides flat region band 4f and almost reaches tunnel junction 4i.Preferably, part layer 5a in bottom comprises the material with little conductivity.In addition, the material of bottom part layer 5a advantageously has following refractive index: this refractive index is less than the refractive index of semiconductor layer 4a.For example, bottom part layer 5a comprises unadulterated AlGaN, and semiconductor layer 4a comprises the GaN that p mixes.Top part layer 5b is arranged on bottom part layer 5a and the outstanding district band 4g.Preferably, part layer 5b in top has the high conductivity that is used for excellent electric contact.Top part layer 5b for example comprises the AlInGaN that n mixes, especially the GaN of the AlInN of the AlGaN of n doping, n doping or n doping.
After making up outstanding district band 4g, before removal is used to produce the mask of outstanding district band 4g, can makes electric current and stop layer 7 and bottom part layer 5a.After the manufacturing electric current stops layer 7 and bottom part layer 5a, can remove mask and growth top part layer 5b.
Semiconductor laser apparatus 1 shown in Figure 15 can have all and combine described advantage of Fig. 9 and expansion scheme except described difference.
Figure 16 shows the schematic cross-section according to the 8th embodiment of the semiconductor laser apparatus 1 of second deformation program of the present invention.
Semiconductor laser apparatus 1 has following constructional depth as the embodiment of Figure 15: this constructional depth almost reaches active area 3.
For the outstanding district band 4g of passivation, cap rock has bottom part layer 5a, and this bottom part layer is as passivation layer.This passivation layer is arranged on flat region band 4f and goes up and reach the 4th semiconductor layer 4j.The side of the district band 4g that bottom part layer 5a will give prominence to almost completely hides.Preferably, bottom part layer 5a comprises the oxide of electric insulation, such as silica.But what also can consider is that bottom part layer 5a has the nitride of electric insulation, such as silicon nitride.
Bottom part layer 5a and outstanding district band 4g are provided with the top part layer 5b of cap rock.This top part layer advantageously comprises the TCO that n mixes.As mentioning, making the layer that is made up of TCO does not have the MOVPE outgrowth so complicated.In addition, lower depositing temperature makes and the defective that less temperature causes occurs.
Semiconductor laser apparatus 1 shown in Figure 16 can have all and combine Fig. 9,12 and 15 described advantage and expansion scheme except described difference.
Figure 17 shows the schematic cross-sectional view according to the 9th embodiment of the semiconductor laser apparatus 1 of second deformation program of the present invention.
Shown semiconductor laser apparatus 1 has and the similar structure of semiconductor laser apparatus shown in Figure 9.Yet constructional depth is less than the situation at the embodiment of Fig. 9 to 16.Second area only structuring to tunnel junction 4i.Thus, less damage appears at active area 3 with in second area.Yet carried out bigger current expansion.
The present invention is owing to the description by embodiment is limited to these embodiment.Or rather, the present invention includes the combination in any of any new feature and characteristic, especially comprise the combination in any of the characteristic in the claim, even this characteristic or combination itself do not explained in claim or embodiment clearly.

Claims (15)

1. a semiconductor laser apparatus (1) has:
-first area (2),
-second area, district's band (4g) that it has flat region band (4f) and band is given prominence to from the flat region,
And have:
-active area (3), it is arranged between said first area (2) and the said second area, wherein
(5,5a 5b) locally at least is set directly on said outstanding district's band (4g), and laterally exceeds said outstanding district's band (4g) to comprise the cap rock of semi-conducting material or transparent conductive oxide.
2. semiconductor laser apparatus according to claim 1 (1), and wherein said cap rock (5,5a, 5b) epitaxial growth.
3. semiconductor laser apparatus according to claim 1 and 2 (1), wherein said cap rock has Al nGa mIn 1-n-mN, wherein 0≤n≤1,0≤m≤1 and n+m≤1.
4. according to the described semiconductor laser apparatus of one of claim 1 to 3 (1), wherein said first area (2) are first conduction types, and said second area at least the part be second conduction type.
5. semiconductor laser apparatus according to claim 4 (1), wherein cap rock (5,5a, 5b) from interarea extend at least on the side of said outstanding district's band (4g) and with the form fit of said outstanding district's band (4g).
6. semiconductor laser apparatus according to claim 5 (1), wherein the flat region band (4f) of second area is provided with passivation layer (6), and said cap rock (5,5a 5b) extends until said passivation layer (6) along side.
7. semiconductor laser apparatus according to claim 5 (1), (5,5a 5b) extends to the said flat region band (4f) from interarea wherein said cap rock.
8. semiconductor laser apparatus according to claim 7 (1), wherein (5,5a is provided with electric current between 5b) and stops layer (7) at second area and cap rock.
9. semiconductor laser apparatus according to claim 8 (1), wherein electric current stops the ground growth of layer (7) extension.
10. according to the described semiconductor laser apparatus of one of claim 4 to 9 (1), wherein said outstanding district's band (4g) have local at least directly with cap rock (5,5a, 5b) direct contact layer adjacency, second conduction type (4e).
11. semiconductor laser apparatus according to claim 10 (1), wherein said outstanding district's band (4g) have and contact layer (4e) outer shell adjacency, second conduction type (4d).
12. according to the described semiconductor laser apparatus of one of claim 4 to 11 (1), (5,5a is 5b) as other contact layer for wherein said cap rock.
13. according to the described semiconductor laser apparatus of one of claim 1 to 3 (1); Wherein said first area (2) be first conduction type and said second area only the part be second conduction type, and wherein said outstanding district's band (4g) has tunnel junction (4i).
14. semiconductor laser apparatus according to claim 12 (1), (5,5a 5b) has smooth interarea to wherein said cap rock on the side that deviates from outstanding district's band (4g).
15. according to one of aforesaid right requirement described semiconductor laser apparatus (1), wherein said outstanding district's band (4g) has the configuration of strip.
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