CN102460651B - 移除基板与静电卡钳之间的电荷 - Google Patents
移除基板与静电卡钳之间的电荷 Download PDFInfo
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Abstract
本发明揭示一种静电卡钳,其在移除之前及期间,较有效地将累积电荷自基板移除。当前,起模顶杆及接地插针为用于在植入之后将电荷自基板移除的仅有机构。本发明描述一种卡钳,其具有接地的较多额外低电阻路径中之一者。此等额外导管允许累积的电荷在将所述基板自所述卡钳移除之前及期间被耗散。藉由提供自基板114的背侧表面的充分电荷汲取,可减少基板粘住卡钳的问题。此举导致基板破裂的相对减少。
Description
技术领域
本发明涉及基板处置(substrate handling),尤其涉及处置基板的设备及方法。
背景技术
电子装置(electronic device)可由已经历各种制程的基板形成。此等制程中之一者可包含引入杂质(impurity)或掺杂剂(dopant),以更改原始基板的电特性。举例而言,可将带电离子作为杂质或掺杂剂而引入至基板(诸如硅晶圆(silicon wafer)),以更改基板的电特性。将杂质引入至基板的制程中的一者可为离子植入制程(ion implantationprocess)。
离子植入器(ion implanter)用于执行基板的离子植入或其他改质。图1绘示已知离子植入器的方块图。已知离子植入器可包括离子源(ionsource)102,其可由电源(power supply)101来施加偏压。所述植入器可由控制器(controller)120控制。操作者经由用户界面系统(userinterface system)122而与控制器120通信。离子源102通常包含于被称为源外壳(source housing)(未图示)的真空室(vacuum chamber)中。离子植入器(ion implanter)100亦可包括离子10所经过的一系列射束线(beam-line)组件。所述一系列射束线组件可包含(例如)提取电极(extraction electrode)104、90°磁体分析器(90°magnet analyzer)106、第一减速(D1)级108、70°磁体准直仪(70°magnet collimator)110以及第二减速(D2)级112。非常类似于操纵光束的一系列光学透镜(optical lens),所述射束线组件可在使离子束10转向基板或晶圆114之前操纵离子束10且使其聚焦,所述基板或晶圆114安置于基板支撑件(substrate support)116上。
在操作中,基板处置机器人(substrate handling robot)(未图示) 将基板114安置于基板支撑件116上,基板支撑件116可藉由一设备(有时被称为“旋转板(roplat)”)(未图示)而在一个或多个维度上移动(例如平移、旋转及倾斜)。同时,离子在离子源102中产生,且由提取电极104提取。所提取的离子10在一种类似射束的状态下沿射束线组件行进,且被植入至基板114上。在植入离子已完成之后,基板处置机器人可将基板114自基板支撑件116及自离子植入器100移除。
参看图2A及图2B,绘示说明在离子植入制程期间支撑基板114的工件支撑件(work-piece support)116的方块图。如图2A中所说明,工件支撑件116可包括密封环(sealing ring)202,以及与基板114接触的多个凸起(embossment)204。所述密封环可为环形环,其宽度约为0.25时,且高度为5微米。凸起204的直径可为约1密耳(mil),且高度可为5微米。另外,工件支撑件116亦可包含至少一冷却区域(cooling region)206。在植入制程期间,可将冷却气体(cooling gas)提供至冷却区域206,防止基板114过热。工件支撑件116可具有气体通道(gas channel)及导管(conduit),以允许此冷却气体流至冷却区域206。工件支撑件116可进一步包含多个起模顶杆(lift pin)208,其可移动以便在由箭头指示的方向上推动基板114使其离开工件支撑件116。起模顶杆208可缩回至工件支撑件116内,如图2B中所说明。工件亦将通常与多个接地插针(ground pin)205接触。
工件支撑件116的形状可为圆柱形,使得其顶面为圆形,以便固持圆盘(disc)形基板。当然,其他形状是可能的。为了有效地将基板114固持在适当位置,大多数工件支撑件通常使用静电力(electrostatic force)。藉由在工件支撑件116的上侧上形成较强的静电力,支撑件可充当静电卡钳(electrostatic clamp)或卡盘(chuck),基板114可在无任何机械紧固装置(mechanical fastening device)的情况下被固持于适当位置。此使污染减至最小,避免因机械卡紧而造成的晶圆损坏,且亦改良循环时间,因为基板在已被植入之后不需要被松开。此等卡钳通常使用两种类型的力中的一种来将基板固持于适当位置:库仑(coulombic)力或约翰逊-拉贝克(Johnson-Rahbeck)力。
如图2A中所见,卡钳116传统上由若干层组成。第一层或顶部层 210(其接触基板114)由电绝缘或半导电材料(诸如氧化铝)制成,因为其必须在不形成短路的情况下产生静电场。在一些实施例中,此层的厚度约为4密耳。对于使用库仑力的彼等实施例,通常使用结晶及非晶介电材料形成的顶部层210的电阻率通常大于1014Ω-cm。对于使用约翰逊-拉贝克力的彼等实施例,由半导电材料形成的顶部层的体电阻率(volume resistivity)通常在1010Ω-cm至1012Ω-cm的范围内。术语“非导电性”用于描述在此等范围中的任一者内且适合于形成任一类型的力的材料。库仑力可由交变电压(alternating voltage,AC)或由恒定电压(constant voltage,DC)源产生。
在此层正下方为导电层212,其含有形成静电场的电极。使用导电材料(诸如银)来制作此导电层212。在此层中形成图案(极类似于印刷电路板中所进行者),以形成所要的电极形状及大小。在此导电层212下方为第二绝缘层214,其用于使导电层212与下部部分220分离。
下部部分220较佳是由具有较高导热性的金属或金属合金制成,以使工件支撑件116的总体温度维持于可接受范围内。在许多应用中,将铝用于此下部部分220。
最初,起模顶杆208处于降低位置。基板处置机器人250接着将基板114移动至工件支撑件116上方的位置。起模顶杆208接着可被致动至升高位置(如图2A中所示),且可自基板处置机器人250接收基板114。其后,基板处置机器人250移动而远离工件支撑件116,且起模顶杆208可后退至工件支撑件116中,使得工件支撑件116的密封环202及凸起204可与基板114接触,如图2B中所示。接地插针205亦通常与基板114接触。接着可在起模顶杆208处于此凹陷(recessed)位置的情况下执行植入制程。在植入制程之后,将一直由静电力固持于适当位置的基板114自工件支撑件116松开。起模顶杆208接着可延伸至升高位置中,进而升高基板114,且使基板114与工件支撑件116的边缘202及凸起204分离,如图2A中所示。起模顶杆208为绝缘的或导电的,且因此可不自基板114移除任何剩余电荷。基板处置机器人250接着可安置于基板114下方,在该处,基板处置机器人250可撷取(retrieve)处于升高位置的已植入基板114。起模顶杆208接着可降低,且机器人250接着可被致动,以便将基板114自植入器移除。
已知离子植入器100可能出现的状况可在将基板114自工件支撑件116移除的过程中发现。在将基板114卡紧至工件支撑件116及松开的多个循环之后,基板114的卡紧至工件支撑件116的此侧可能显示出损坏。此损坏可能归因于累积于基板114以及工件支撑件116的顶部层210上的静电荷引起的放电。静电荷可向接地插针205或直接向工件支撑件116的表面放电(电弧)。
之前,基板114已经由与金属起模顶杆208或接地插针205的接触而接地。基板114先前亦已使用等离子体泛射枪(plasma flood gun,PFG)而接地。归因于起模顶杆208或接地插针205与基板114的含有静电荷的区域之间的较短接触时间及较小接触面积,其中起模顶杆208及接地插针205并不有效地自基板114汲取静电荷的状况可能存在。因此,此项技术中需要一种可移除电荷的经改良的静电卡钳。
发明内容
现有技术的问题由本发明的设备及方法来克服。本发明揭露一种静电卡钳,其在移除之前,较有效地自基板移除累积的电荷。当前,起模顶杆及接地插针为用于在植入之后自基板移除电荷的仅有机构(onlymechanism)。本发明描述一种卡钳,其具有接地的较多额外低电阻导管中之一者。此等额外导管允许累积的电荷在基板自卡钳移除期间被耗散。藉由提供自基板的背侧表面的充分电荷汲取(sufficient chargedrainage),可减少基板粘住卡钳的问题。此举导致基板破裂的相对减少。在一些实施例中,此等接地路径是间歇的,以免在正产生静电力时存在。
附图说明
为了促进对本发明的更全面理解,现参考随附图,其中相同元件以相同标号表示。此等图不应被解释为限制本发明,而是设定成仅为例示性的。
图1表示传统的离子植入器。
图2A表示用延伸的起模顶杆来支撑基板的工件支撑件的方块图。
图2B表示用凹陷的起模顶杆来支撑基板的工件支撑件的方块图。
图3表示静电卡钳的实施例的俯视图。
图4表示图3的实施例的横截面图。
图5表示静电卡钳的第二实施例的俯视图。
图6表示图5的实施例的横截面图。
图7表示图6中基板粘住卡钳的实施例的横截面图。
具体实施方式
在本发明中,介绍用于处置经处理的基板的设备及方法的若干实施例。出于清楚及简单的目的,本发明将集中于用于处置由射束线离子植入器处理的基板的设备及方法。然而,熟习此项技术者可认识到,本发明同等适用于其他类型的处理系统,包含(例如)等离子体浸没离子植入(plasma immersion ion implantation,“PIII”)系统、等离子体掺杂(plasma doping,“PLAD”)系统、蚀刻系统、基于光学的处理系统以及化学气相沉积(chemical vapor deposition,CVD)系统。由此,本发明在范畴方面不受本文所描述的具体实施例限制。
本文所揭露的实施例为基板以及静电卡钳的顶部层提供到达接地的更可靠且更低电阻的路径。基板的某一部分将接地,无论基板如何或在哪一方向上自静电卡钳释放。藉由提供自基板的背侧表面的充分电荷汲取,可减少基板“粘住”静电卡钳以及基板破裂。
图3为静电卡钳(或“卡钳”)300的实施例的俯视透视图。静电卡钳300为工件支撑件的一实例。卡钳300具有外部环带(annulus)或密封环301。在一实例中,环301的宽度可为近似0.25时。尽管未图示,但卡钳300的上表面亦可具有凸起。卡钳300包含起模顶杆302及接地插针305。起模顶杆302用于在对基板的处理已完成之后,将基板自卡钳300提起。如图4中所见,密封环301连接至接地。由于密封环301由高电阻率材料制成,因此可能需要多个连接(connection)310,其在空间上围绕密封环301而分开。此连接310(其可被密封)可具有非常低的电阻,其诸如经由导电材料(诸如铜)来达成。在其他实施例中,至接地的连接310可经由半导电材料,诸如碳膜(carbon film)。在一些 实施例中,用于将密封环301连接至接地的材料的电阻率可为约107Ω-cm。
图4绘示图3的卡钳300的横截面图。如上文所述,静电卡钳300的下部部分320通常由金属制成,且亦连接至接地。因此,在一些实施例中,藉由将密封环301连接至卡钳300的下部部分320,来使密封环301连接至接地。可藉由围绕密封环301的整个圆周而施加导电或半导电涂层来制作此连接310,使得密封环301与下部部分320形成连续的接触。在其他实施例中,环301与下部部分320之间的连接310并不围绕整个圆周。而是,下部部分320与密封环301之间制成若干离散的连接310。在一些实施例中,在密封环301的圆周周围施加碳膜,从而将其连接至下部部分320。亦可使用其他材料,诸如 漆,其为基于水的胶体石墨悬浮液(water-based colloidalgraphite suspension)或其他基于碳的材料。
虽然图4绘示经由连接310而连接至静电卡钳300的下部部分320的密封环301,但其他接地连接是可能的且在本发明的范畴内。图4仅描述一个可能实施例。举例而言,密封环301可连接至接地,而非经由静电卡钳300的下部部分320。
卡钳300可具有顶部层304、电极306、绝缘层308以及下部部分320。如上文所述,使用非导电材料来构造静电卡钳300的顶部层304,其中材料的电阻率可在108Ω-cm与1015Ω-cm之间的范围内。在接近此范围的下限的电阻率,密封环301至接地的连接310可足以消除静电卡钳300的顶部层304以及基板114上的累积电荷。换言之,顶部层304的电阻率足够低,以允许累积于顶部层304及基板114上的电荷流动至连接至接地的密封环301。
此外,多种测试已显示密封环301的接地(亦即,至接地的被动连接)对静电卡钳300的卡紧力具有最小影响。此是归因于顶部表面304的通常较高的电阻率,其限制已接地密封环301的作用。然而,在一些实施例中,密封环301可间歇地连接至接地(亦即,有效(active)的接地连接)。举例而言,在电极306有效地(actively)产生静电场的同时,藉由使用开关或其他装置,则接地连接310可被中断。换言之,所述开关串联于密封环301与接地之间,使得开关的致动可启用或停用至接地的连接。当电极306不作用(inactive)时,该接地连接310可恢复。此种修改保证了卡钳300的顶部表面304的接地对静电卡钳力具有最小影响或无影响。
在其他实施例中,顶部层304的电阻率可能较大,诸如大于1012Ω-cm。在所述实施例中,密封环301的接地可能不足以汲取基板114及顶部层304上的累积电荷。换言之,顶部层304的电阻率过高,以致不允许累积电荷自由流动至密封环301。在此实施例中,导电或半导电导管可沉积于顶部层304上(或顶部层304中)。此等导管意欲允许累积的电荷更容易地流动至密封环301。
图5绘示静电卡钳(或“卡钳”)400的第二实施例的俯视透视图。在一些实施例中,卡钳400的横截面可类似于图4中所示的横截面,其中存在非导电顶部层、导电层、绝缘层及下部部分。如上文所述,静电卡钳400具有外部环带或密封环401,其宽度可为近似0.25时。在一个实施例中,密封环401可对应于图3中的密封环301。如前,密封环401使用接地连接403而连接至接地。静电卡钳400亦包含起模顶杆430及接地插针405。静电卡钳400亦包含自静电卡钳400的顶部表面上的各个位置至密封环401的若干导管402。虽然图5中说明六个导管402,但可使用更多或更少导管402,且此实施例并不仅限于六个导管402。此外,与图5中所说明的情形不同的导管402的图案是可能的。导管402允许电荷流动至密封环401。
此外,将图5中的导管402绘示为径向轮辐(spoke)。然而,其他导管402图案是可能的。导管402可经配置以允许静电卡钳400的顶部表面上的点与接地之间存在较低电阻(相较于当前存在的电阻)的路径。
导管402可由(例如)碳或SiC来制造。导管402亦可由熟习此项技术者已知的某一其他导电沉积材料来制造。在一些实施例中,使用化学气相沉积(CVD)将导管402施加至静电卡钳400的顶部表面。此等导管402意欲降低至接地的电阻。然而,此等导管402可能仍展现某一电阻率。举例而言,在一些实施例中,导管402具有介于104Ω-cm与108Ω-cm之间的电阻率。
图6为静电卡钳400的实施例的横截面图。基板114安置于静电卡钳400上。在此位置,接地插针405通常可与基板114接触。若基板114 不与密封环401直接接触,则导管402(由图6中的阴影部分表示)可将电荷自基板114携带至密封环401。若基板114与环401及导管402接触,则电荷流动可增加。虽然图6中说明单个导管402,但可存在其他数目的导管402。此外,虽然在图6中将导管402说明为自卡钳400的顶部表面突出,但导管402可凹入至卡钳400的顶部表面中。
图7为图6的实施例的横截面图,其中基板粘住密封环。使用起模顶杆430来使基板114升起。随着起模顶杆430升高,接地插针405与基板114之间的连接被破坏。由于至经接地的密封环401的连接,则可能不发生放电。导管402将电荷自顶部表面移除,从而使在松开卡钳之前可累积于基板上的电荷量减至最小。
若基板114因静电荷而粘住卡钳400,则可使用导管402将电荷传递至接地。举例而言,藉由使用图5中所说明的导管402的图案,无论基板114在何处粘住卡钳400,电荷均可传递至接地。此举将防止粘住基板114及防止对基板114的损坏。
静电卡钳400的顶部上的较低电阻的导管的存在可减小将基板114固持至静电卡钳400的静电力。如上文所述,在一些实例中,正在产生静电力的同时,经由使用开关来使导管402的接地连接中断可能是有利的。此举可藉由中断密封环401与接地之间的连接403来完成。在其他实施例中,开关位于导管402与密封环401之间,使得导管402与密封环401之间的连接可在静电力正被产生时中断。
本发明的范畴不受本文所描述的具体实施例限制。实际上,除本文所描述的实施例之外,熟习此项技术者自前面的描述内容以及随附图将明了本发明的其他各种实施例以及对本发明的修改。因此,所述其他实施例及修改亦将属于本发明的范畴内。另外,尽管本文已为特定目的,在特定环境下,在特定实施方案的上下文中描述了本发明,但熟习此项技术者将认识到,本发明的有用性不限于此,且本发明可为任何数目的目的,在任何数目的环境下有益地实施。
Claims (13)
1.一种用于处置基板的卡钳,其包括:
顶部层,其由非导电材料制成,所述顶部层用以接触基板,
外部环形环,其环绕所述顶部层,以及
所述外部环形环与接地之间的连接,其中所述连接包括碳膜。
2.根据权利要求1所述的卡钳,其更包括安置于所述顶部层下面的下部部分,其中所述下部部分包括金属且接地,且所述连接位于所述外部环形环与所述下部部分之间。
3.根据权利要求1所述的卡钳,其更包括与所述连接串联的开关,使得所述连接可因所述开关的致动而中断。
4.根据权利要求1所述的卡钳,其更包括位于所述顶部层下面的电极,藉此使所述电极经组态以形成静电力以固持所述基板。
5.根据权利要求4所述的卡钳,其中所述连接在所述静电力正被形成的期间中断。
6.根据权利要求1所述的卡钳,其更包括安置于所述顶部层上的导管,其中所述导管的电阻率低于所述顶部层的电阻率。
7.根据权利要求6所述的卡钳,其中所述导管连接至所述外部环形环。
8.根据权利要求7所述的卡钳,其更包括串联于所述导管与所述外部环形环之间的开关,使得所述导管与所述外部环形环之间的所述连接可因所述开关的致动而中断。
9.根据权利要求8所述的卡钳,其更包括位于所述顶部层下面的电极,藉此使所述电极经组态以形成静电力以固持所述基板,且其中所述导管与所述外部环形环之间的所述连接在所述静电力正被形成的期间中断。
10.一种固持、处理及自卡钳释放基板的方法,其包括:
将基板定位于卡钳上,使得所述基板与所述卡钳的顶部表面接触;
在所述卡钳中使用电极来形成静电力以固持所述基板;
在所述静电力有效时处理所述基板,藉此使所述处理在所述基板上形成电荷;
停用所述电极以使所述静电力去活化;
使所述电荷流动至接地,其中所述电荷经由围绕所述卡钳的所述顶部表面的环形环而流动至接地,其中所述电荷流经将所述环形环连接至接地的碳膜;以及
将所述基板自所述卡钳移除。
11.根据权利要求10所述的方法,其中所述电荷在所述静电力去活化时流动至接地。
12.根据权利要求10所述的方法,其中所述电荷流经所述卡钳的所述顶部表面上的导管,所述导管的电阻率低于所述卡钳的所述顶部表面的电阻率。
13.根据权利要求12所述的方法,其中所述电荷自所述导管沿所述顶部表面而流动至环形环。
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