CN102453885A - Method and system for cleaning plasma reaction chamber - Google Patents
Method and system for cleaning plasma reaction chamber Download PDFInfo
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- CN102453885A CN102453885A CN2010105260810A CN201010526081A CN102453885A CN 102453885 A CN102453885 A CN 102453885A CN 2010105260810 A CN2010105260810 A CN 2010105260810A CN 201010526081 A CN201010526081 A CN 201010526081A CN 102453885 A CN102453885 A CN 102453885A
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Abstract
The invention relates to the field of production of semiconductor devices, and particularly to a method and a system for cleaning a plasma reaction chamber, which are used for reducing cleaning time of the inner wall of the plasma reaction chamber and for improving cleaning efficiency. The method disclosed by the invention mainly comprises the steps of: inputting nitrogen trifluoride (NF3) gas to the plasma reaction chamber; triggering the nitrogen trifluoride gas to chemically react with silicon nitride compound in the plasma reaction chamber; and taking residual gas in the plasma reaction chamber away. Application of the method and the system disclosed by the invention can greatly reduce cleaning time of the inner wall of the plasma reaction chamber and increase cleaning efficiency.
Description
Technical field
The present invention relates to the semiconducter device production field, relate in particular to a kind of method and system of cleaning plasma reaction chamber.
Background technology
Plasma reaction chamber is used to carry out semiconductor wafer processing; In the course of processing, can produce a large amount of resultants; These resultants can form the rete that one deck mainly comprises silicon nitride compound at plasma reaction chamber inwall and spare part surface, and technology can cause peeling off of rete for a long time, produces a large amount of particles; Cause next wafers particle contamination that meeting peeled off in technological process, and then influence the compactness of reliability of products and wafer rete.Therefore, after the intact wafers of technology, arm need spread out of plasma reaction chamber with the wafer that technology is good, carries out the cleaning of plasma reaction chamber then in plasma reaction chamber.
Because traditional cleaning way is after the intact wafers of technology, plasma reaction chamber to be opened, and adopts manual type to clean that for example using to soak into has the non-dust cloth of water that said plasma reaction chamber is carried out wiping.The complicated time spent of this method cleaning process is of a specified duration, and is difficult to the film on the plasma reaction chamber inwall is cleaned up.Therefore, the mode article on plasma precursor reactant cavity inner wall that present most of wafer factory uses dry method to clean cleans, and for example, uses tetrafluoro-methane (CF
4) and nitrous oxide (N
2O) article on plasma precursor reactant cavity cleans, but the inventor finds this method following shortcoming is arranged:
The first, scavenging period is longer;
The second, the employed purgative gas scale of construction is bigger;
Three, the spare part loss is very fast, and cost is too high.
Summary of the invention
The embodiment of the invention provides a kind of method and system of cleaning plasma reaction chamber, is used to reduce the time of cleaning the plasma reaction chamber inwall, improves cleaning efficiency.
A kind of method of cleaning plasma reaction chamber, said method comprises:
With nitrogen trifluoride NF
3Gas is input in the said plasma reaction chamber;
Trigger said nitrogen trifluoride NF
3Silicon nitride compound in gas and the said plasma reaction chamber is carried out chemical reaction;
Entrap bubble in the said plasma reaction chamber is taken away.
A kind of system of cleaning plasma reaction chamber, said system comprises:
Gas storage links to each other with said plasma reaction chamber, is used for the nitrogen trifluoride NF with storage
3Gas is input in the said plasma reaction chamber;
The radio frequency power generator links to each other with said plasma reaction chamber, and said radio frequency power generator is used to trigger said nitrogen trifluoride NF
3Silicon nitride compound in gas and the said plasma reaction chamber is carried out chemical reaction;
Mechanical pump links to each other with plasma reaction chamber, is used for the entrap bubble in the said plasma reaction chamber is taken away.
In the method provided by the invention, through use speed of response faster gas can reduce greatly and clean the required time of plasma reaction chamber inwall, improve cleaning efficiency as raw material.
Description of drawings
Fig. 1 is a kind of method steps synoptic diagram that cleans plasma reaction chamber provided by the invention;
A kind of method steps synoptic diagram that cleans plasma reaction chamber that Fig. 2 provides for the embodiment of the invention;
Fig. 3 is a kind of system architecture synoptic diagram that cleans plasma reaction chamber provided by the invention.
Embodiment
The present invention provides a kind of method and system of cleaning plasma reaction chamber.Because technological process can form the rete that one deck mainly comprises silicon nitride compound in plasma reaction chamber for a long time; When rete comes off, can produce a large amount of particles, these particles will influence the safety of next wafers and the compactness of wafer rete.Therefore, before next wafers of beginning technology, need the rete of article on plasma precursor reactant cavity inner wall to clean.And the required gas raw material of dry method cleaning is CF in the prior art
4And N
2O, this time method time spent is long, and needs to consume a large amount of gas raw materials, and the method that the present invention proposes can effectively reduce the cleaning time, conservation, prolongation spare part work-ing life and raising plasma reaction chamber working efficiency.As shown in Figure 1, the present invention includes following steps:
Step S11 is with nitrogen trifluoride (NF
3) gas is input in the said plasma reaction chamber;
Step S12 triggers said nitrogen trifluoride (NF
3) silicon nitride compound in gas and the said plasma reaction chamber carries out chemical reaction;
Step S13 takes the entrap bubble in the said plasma reaction chamber away.
Before step S11, need carry out the cleaning preparation work of plasma reaction chamber, said cleaning preparation work comprises: import a certain amount of nitrogen (N to plasma reaction chamber
2); By the staff predefined atmospheric pressure value and flow speed value are deposited in respectively in weather gauge and the under meter;
In step S11, unit is to storage NF
3Gas storage send the working signal of starting working, after said gas storage receives working signal, to said plasma reaction chamber input NF
3Be arranged on the under meter of the inlet mouth of said plasma reaction chamber, control said NF according to first flow speed value that is provided with in advance
3Get into the flow velocity of said plasma reaction chamber; Said gas storage is at NF
3When being input in the said plasma reaction chamber, with nitrogen (N according to first flow speed value that is provided with in advance
2) be input in the said plasma reaction chamber according to second flow speed value that is provided with in advance, with nitrous oxide (N
2O) be input in the said plasma reaction chamber according to the 3rd flow speed value that is provided with in advance.
Behind step S11, before the step S12, unit sends the working signal of starting working to the radio frequency power generator;
In step S12, after said radio frequency power generator receives working signal, send radiofrequency signal to said plasma reaction chamber, said radiofrequency signal is carried out photoglow, said NF
3From said photoglow, obtain energy; Make said NF
3Carry out chemical reaction with the silicon nitride compound in the said plasma reaction chamber;
After step S12, and before step S13, unit sends the working signal of starting working to mechanical pump;
In step S13, after said mechanical pump receives the working signal of starting working, extract the entrap bubble in the said plasma reaction chamber.
Preferable in step S11, to said plasma reaction chamber input NF
3, N
2And N
2In the time of O; Regulate the atmospheric pressure value in the said plasma reaction chamber; Make the atmospheric pressure value in the said plasma reaction chamber be stabilized in predefined atmospheric pressure value; Concrete grammar comprises: when the atmospheric pressure value in the said plasma reaction chamber during less than said predefined atmospheric pressure value, the folded valve that unit control is arranged on the air outlet of said plasma reaction chamber reduces aperture; When the atmospheric pressure value in the said plasma reaction chamber during greater than said predefined atmospheric pressure value, the folded valve that unit control is arranged on the air outlet of said plasma reaction chamber increases aperture.
Below introduce with specific embodiment, as shown in Figure 2:
Step S21 cleans required gas raw material with dry method and deposits corresponding gas storage respectively in;
Said gas raw material comprises: nitrogen trifluoride (NF
3), nitrous oxide (N
2O) and nitrogen (N
2);
Step S22, staff's flow speed value that predefined every kind of gas raw material is required deposits in respectively in the under meter separately in advance; Simultaneously predefined atmospheric pressure value is deposited in the pressure warning unit;
The required flow rate value is in the method that present embodiment provides: NF
3The first required flow speed value is value between 120 milliliters/second to 140 milliliters/second; N
2The second required flow speed value is value between 700 milliliters/second to 900 milliliters/second; N
2The 3rd flow speed value value between 140 milliliters/second to 160 milliliters/second that O is required; As shown in table 1, the value of three kinds of preferable gas raw material required flow rate values is specially: N
2Flow speed value be 800 milliliters/second; NF
3Flow speed value be 130 milliliters/second; N
2The flow speed value of O is 150 milliliters/second; Above-mentioned flow speed value is confirmed through emulation;
| Gas raw material | The gas flow rate value | Process time | Technology total gas flow rate once |
| NF 3 | 130 milliliters/second | 55 seconds | 7150 milliliters |
| N 2O | 150 milliliters/second | 55 seconds | 8250 milliliters |
| N 2 | 800 milliliters/second | 55 seconds | 44000 milliliters |
Table 1
Step S23, after last a slice wafer technique is accomplished, the cleaning preparation work before cleaning in the beginning plasma reaction chamber;
Said cleaning preparation work comprises: in first fixed time that is provided with in advance, in plasma reaction chamber, import a certain amount of N
2, said 5 seconds first times spent fixed time; Said first fixed time can be confirmed through emulation;
Step S24, unit sends the working signal of starting working to the gas storage of storage gas raw material;
Step S25 after said gas storage receives working signal, imports gas raw material to said plasma reaction chamber simultaneously in predefined second fixed time; Value between 2 seconds to 8 seconds of said second fixed time; The value of the second preferable fixed time is 5 seconds; Said second fixed time can be confirmed through emulation;
In said plasma reaction chamber input gas raw material, utilize the under meter of the inlet mouth that is arranged on said plasma reaction chamber, control the flow velocity that said gas raw material gets into said plasma reaction chamber according to the flow speed value that is provided with in advance;
In the defeated people's gas raw material of said plasma reaction chamber, the intravital pressure of stable plasma reaction chamber; The intravital pressure method of concrete said stable plasma reaction chamber comprises:
When the atmospheric pressure value in the said plasma reaction chamber during less than said predefined atmospheric pressure value, the folded valve that unit control is arranged on the air outlet of said plasma reaction chamber reduces aperture;
When the atmospheric pressure value in the said plasma reaction chamber during greater than said predefined atmospheric pressure value, the folded valve that unit control is arranged on the air outlet of said plasma reaction chamber increases aperture.
Requiring the needed atmospheric pressure value of said plasma reaction chamber in the present embodiment is 4.6 holders, therefore should make manometric registration also point to 4.6 holders, and the pressure-stabilisation in the plasma reaction chamber then is described;
Step S26, unit send the working signal of starting working to the radio frequency power generator;
Step S27; After said radio frequency power generator receives working signal, in predefined the 3rd fixed time, send radiofrequency signal to said plasma reaction chamber; Said radiofrequency signal is carried out photoglow, and said gas raw material obtains energy from said photoglow; Make the silicon nitride compound in said gas raw material and the said plasma reaction chamber carry out chemical reaction;
Value between 40 seconds to 60 seconds of said the 3rd fixed time; The 3rd preferable fixed time is 50 seconds; Said the 3rd fixed time can be confirmed through emulation;
Silicon nitride compound in the said plasma reaction chamber is carried out chemical reaction, and concrete chemical equation is following:
NF
3+ Si
XN
Y→ SiF
4+ N
2(Si
XN
YBe the compound of silicon nitride)
Through above-mentioned chemical reaction, the silicon tetrafluoride (SiF that generation can directly be extracted out by mechanical pump
4) gas and nitrogen (N
2), reach the purpose that dry method is cleaned;
Step S28, unit send the working signal of starting working to mechanical pump;
Step S29 after said mechanical pump receives the working signal of starting working, extracts the entrap bubble in the said plasma reaction chamber, accomplishes dry method and cleans.
Special, in the cleaning preparation work in step S23, in plasma reaction chamber, add a certain amount of N in advance
2, purpose is disposablely in subsequent process in plasma reaction chamber, to add too much gas in order to prevent, the air pressure in the plasma reaction chamber is increased sharply, and causes pressure warning unit to change too fast and report to the police; In step S25; Come the pilot-gas raw material to be input to the intravital speed in plasma reaction chamber with pre-set flow speed value; And the intravital pressure of while stabilized plasma reaction chamber; Be to react under specified requirements with silicon nitride compound, avoid generating other solid impurities pollution wafers in order to reduce the process time and the restriction gas raw material that clean the plasma chamber inwall.
In the present embodiment owing to used the NF that possesses faster response speed
3, N
2And N
2Therefore O can reduce chemical time greatly as gas raw material, and uses N
2With N
2The effect of O is in order to slow down chemical reaction velocity, in order to avoid because violent chemical reaction produces excess air, cause the plasma reaction chamber internal pressure unstable, to making NF
3Can not under specified pressure, carry out chemical reaction with the compound of silicon nitride, pollute wafer and generate other solid impurities.
As shown in Figure 3, a kind of system of cleaning plasma reaction chamber provided by the invention, this system comprises:
Gas storage 31 links to each other with said plasma reaction chamber 32, is used for the nitrogen trifluoride (NF with storage
3) gas is input in the said plasma reaction chamber 32;
Radio frequency power generator 33 links to each other with said plasma reaction chamber 32, and said radio frequency power generator 33 is used to trigger said nitrogen trifluoride (NF
3) 32 silicon nitride compound is carried out chemical reaction in gas and the said plasma reaction chamber;
Mechanical pump 34 links to each other with plasma reaction chamber 32, is used for the entrap bubble in the said plasma reaction chamber 32 is taken away;
Unit 36 links to each other with said gas storage 31, is used for sending the working signal of starting working to gas storage 31;
Under meter 35 is arranged on the inlet mouth of said plasma reaction chamber 32, and said under meter 35 is used for controlling said nitrogen trifluoride (NF according to first flow speed value that is provided with in advance
3) gas gets into the flow velocity of said plasma reaction chamber 32;
Said gas storage 31 is used for:
After receiving working signal, to the inlet mouth input nitrogen trifluoride (NF of said plasma reaction chamber 32
3) gas;
Gas storage 31 also is used for:
After receiving working signal, to the inlet mouth input nitrogen N of said plasma reaction chamber 32
2With nitrous oxide N
2O;
Said under meter 35 also is used for:
Second flow speed value according to being provided with is in advance controlled said N
2Gas gets into the flow velocity of said plasma reaction chamber 32, controls said N according to the 3rd flow speed value that is provided with in advance
2O gas gets into the flow velocity of said plasma reaction chamber 32.
Said unit 36 is further used for:
In predefined second fixed time, regulate the atmospheric pressure value in the said plasma reaction chamber 32, make that the atmospheric pressure value in the said plasma reaction chamber 32 is stabilized in predefined atmospheric pressure value;
Folded valve 37 is arranged on the air outlet of said plasma reaction chamber 32, and said folded valve 37 is used for according to the control of said unit 36 self aperture being increased or reducing;
Said unit 36 is further used for:
When the atmospheric pressure value in the said plasma reaction chamber 32 during, control said folded valve 37 and reduce aperture less than said predefined atmospheric pressure value; When the atmospheric pressure value in the said plasma reaction chamber 32 during, control said folded valve 37 and increase apertures greater than said predefined atmospheric pressure value;
Said unit 36 is further used for:
Send the working signal of starting working to said radio frequency power generator 33;
Said radio frequency power generator 33 is further used for:
After receiving working signal, send radiofrequency signal to said plasma reaction chamber 32, said radiofrequency signal is carried out photoglow, makes said nitrogen trifluoride (NF
3) gas carries out chemical reaction with said silicon nitride compound after from said photoglow, obtaining energy.。
Beneficial effect of the present invention:
Adopt method provided by the invention, very big improvement all arranged on still to the extent of deterioration of equipment, be in particular at gas raw material, scavenging period:
The first, reduced scavenging period; As shown in table 2, what show in this table is to use tetrafluoro-methane (CF in the existing technology
4) and nitrous oxide (N
2O) as gas raw material, carry out corresponding chemical with the silicon nitride compound in the plasma reaction chamber and react the needed process time, table 2 is compared with table 1, can find out that method provided by the invention reduced the process time greatly.
| Gas raw material | The gas flow rate value | Process time | Technology total gas flow rate once |
| CF 4 | 680 milliliters/second | 70 seconds | 47600 milliliters |
| N 2O | 320 milliliters/second | 70 seconds | 22400 milliliters |
Table 2
The second, reduced the consumption of gas raw material; In the prior art as shown in table 2, accomplish a dry method and clean required CF
4Gas gross is 47600 milliliters; Need 7150 milliliters NF and accomplish a dry method cleaning in the novel method
3N with 44000 milliliters
27150 milliliters NF
3Price is equivalent to 28039 milliliters CF
4Price, 44000 milliliters N
2Price be equivalent to 4400 milliliters of CF
4Price; Can extrapolate thus, accomplish a dry method cleaning in the novel method and can practice thrift CF
4The total amount of gas is:
47600 (milliliter)-28039 (milliliter)-4400 (milliliter)=15161 (milliliter)
In the prior art as shown in table 2, accomplish a dry method and clean required N
2The gas gross of O is 22400 milliliters; Need 8250 milliliters N and accomplish a dry method cleaning in the novel method
2Therefore O, can draw in the novel method and to accomplish a dry method and clean and can practice thrift N
2The total amount of O gas is:
22400 (milliliter)-8250 (milliliter)=14150 (milliliter)
Can extrapolate thus in the novel method and to accomplish dry method and clean and can practice thrift gas gross altogether and be:
15161 (milliliter)+14150 (milliliter)=29311 (milliliter)
According to aforementioned calculation, the wafer factory that produces 400,000 wafer with a year is calculated, and can save costs up to a million in 1 year, and the time of process wafer also can be saved 1667 hours.
Three, reduce the loss of spare part; Owing to accomplish the gas usage that dry method cleans and the minimizing of scavenging period, the loss of spare part is also reduced greatly.
Four, the particle of silicon nitride compound rete is up to standard; Compare with traditional method, after the use novel method, when guaranteeing to reduce gas usage, enhancing productivity, the particle total amount of silicon nitride compound rete does not change a lot; In the front and back of using new-type dry method to clean in 3 months in the article on plasma precursor reactant cavity particle monitoring data to the silicon nitride compound rete following:
Use traditional dry method purging method, the particle average quantity of silicon nitride compound rete is in three months:＞0.3 micron particle is 56;
Use new-type dry method purging method, the particle average quantity of silicon nitride compound rete is in three months:＞0.3 micron particle is 50.
Those skilled in the art should understand that embodiments of the invention can be provided as method, system or computer program.Therefore, the present invention can adopt the form of the embodiment of complete hardware embodiment, complete software embodiment or combination software and hardware aspect.And the present invention can be employed in the form that one or more computer-usable storage medium (including but not limited to multiple head unit, CD-ROM, optical memory etc.) that wherein include computer usable program code go up the computer program of implementing.
The present invention is that reference is described according to the schema and/or the skeleton diagram of method, equipment (system) and the computer program of the embodiment of the invention.Should understand can be by the flow process in each flow process in computer program instructions realization flow figure and/or the skeleton diagram and/or square frame and schema and/or the skeleton diagram and/or the combination of square frame.Can provide these computer program instructions to the treater of multi-purpose computer, special purpose computer, Embedded Processor or other programmable data processing device to produce a machine, make the instruction of carrying out through the treater of computingmachine or other programmable data processing device produce the device that is used for being implemented in flow process of schema or a plurality of flow process and/or square frame of skeleton diagram or the specified function of a plurality of square frames.
These computer program instructions also can be stored in ability vectoring computer or the computer-readable memory of other programmable data processing device with ad hoc fashion work; Make the instruction that is stored in this computer-readable memory produce the manufacture that comprises command device, this command device is implemented in specified function in flow process of schema or a plurality of flow process and/or square frame of skeleton diagram or a plurality of square frame.
These computer program instructions also can be loaded on computingmachine or other programmable data processing device; Make on computingmachine or other programmable devices and to carry out the sequence of operations step producing computer implemented processing, thereby the instruction of on computingmachine or other programmable devices, carrying out is provided for being implemented in the step of specified function in flow process of schema or a plurality of flow process and/or square frame of skeleton diagram or a plurality of square frame.
Although described the preferred embodiments of the present invention, in a single day those skilled in the art get the basic inventive concept could of cicada, then can make other change and modification to these embodiment.So accompanying claims is intended to be interpreted as all changes and the modification that comprises preferred embodiment and fall into the scope of the invention.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (20)
1. a method of cleaning plasma reaction chamber is characterized in that, said method comprises:
With nitrogen trifluoride NF
3Gas is input in the said plasma reaction chamber;
Trigger said nitrogen trifluoride NF
3Silicon nitride compound in gas and the said plasma reaction chamber is carried out chemical reaction;
Entrap bubble in the said plasma reaction chamber is taken away.
2. the method for cleaning plasma reaction chamber as claimed in claim 1 is characterized in that, and is said with nitrogen trifluoride NF
3The method that gas is input in the said plasma reaction chamber comprises:
With nitrogen trifluoride NF
3Gas is input in the said plasma reaction chamber according to first flow speed value that is provided with in advance.
3. the method for cleaning plasma reaction chamber as claimed in claim 2 is characterized in that, with nitrogen trifluoride NF
3Gas is input to before the method in the said plasma reaction chamber according to the flow speed value that is provided with in advance, and this method further comprises:
Unit is to storage nitrogen trifluoride NF
3The gas storage of gas is sent the working signal of starting working;
Said with nitrogen trifluoride NF
3Gas comprises according to the method that the flow speed value that is provided with in advance is input in the said plasma reaction chamber:
After said gas storage receives working signal, to the inlet mouth input nitrogen trifluoride NF of said plasma reaction chamber
3Gas;
Be arranged on the under meter of the inlet mouth of said plasma reaction chamber, control said nitrogen trifluoride NF according to the flow speed value that is provided with in advance
3Gas gets into the flow velocity of said plasma reaction chamber.
4. like the method for claim 2 or 3 described cleaning plasma reaction chambers, it is characterized in that, with nitrogen trifluoride NF
3When gas was input in the said plasma reaction chamber according to first flow speed value that is provided with in advance, this method further comprised:
With nitrogen N
2Second flow speed value according to being provided with in advance is input in the said plasma reaction chamber, with nitrous oxide N
2O is input in the said plasma reaction chamber according to the 3rd flow speed value that is provided with in advance.
5. the method for the cleaning plasma reaction chamber described in claim 2 or 3 is characterized in that, said first flow speed value is value between 120 milliliters/second to 140 milliliters/second.
6. the method for the cleaning plasma reaction chamber described in claim 4 is characterized in that, said second flow speed value is value between 700 milliliters/second to 900 milliliters/second.
7. the method for the cleaning plasma reaction chamber described in claim 4 is characterized in that, said the 3rd flow speed value is value between 140 milliliters/second to 160 milliliters/second.
8. the method for cleaning plasma reaction chamber as claimed in claim 2 is characterized in that, and is said with nitrogen trifluoride NF
3The method that gas is input in the said plasma reaction chamber further comprises:
In predefined second fixed time, regulate the atmospheric pressure value in the said plasma reaction chamber, make that the atmospheric pressure value in the said plasma reaction chamber is stabilized in predefined atmospheric pressure value.
9. the method for cleaning plasma reaction chamber as claimed in claim 8 is characterized in that, value between 2 seconds to 8 seconds of said second fixed time.
10. the method for cleaning plasma reaction chamber as claimed in claim 8 is characterized in that, the atmospheric pressure value in the said plasma reaction chamber of said adjusting comprises:
When the atmospheric pressure value in the said plasma reaction chamber during less than said predefined atmospheric pressure value, the folded valve that unit control is arranged on the air outlet of said plasma reaction chamber reduces aperture;
When the atmospheric pressure value in the said plasma reaction chamber during greater than said predefined atmospheric pressure value, the folded valve that unit control is arranged on the air outlet of said plasma reaction chamber increases aperture.
11. the method for cleaning plasma reaction chamber as claimed in claim 1 is characterized in that, with nitrogen trifluoride NF
3Gas is input to after the method in the said plasma reaction chamber and is triggering said nitrogen trifluoride NF
3Silicon nitride compound in gas and the said plasma reaction chamber is carried out before the method for chemical reaction, and this method further comprises:
Unit sends the working signal of starting working to the radio frequency power generator;
The said nitrogen trifluoride NF of said triggering
3The method that silicon nitride compound in gas and the said plasma reaction chamber is carried out chemical reaction comprises:
After said radio frequency power generator receives working signal, send radiofrequency signal to said plasma reaction chamber, said radiofrequency signal is carried out photoglow, said nitrogen trifluoride NF
3Gas carries out chemical reaction with said silicon nitride compound after from said photoglow, obtaining energy.
12. the method for cleaning plasma reaction chamber as claimed in claim 1 is characterized in that, nitrogen trifluoride NF
3Silicon nitride compound in gas and the said plasma reaction chamber is carried out chemical reaction in the 3rd fixed time.
13. the method for cleaning plasma reaction chamber as claimed in claim 12 is characterized in that, value between 40 seconds to 60 seconds of said the 3rd fixed time.
14. the method for cleaning plasma reaction chamber as claimed in claim 1 is characterized in that, is triggering said nitrogen trifluoride NF
3Silicon nitride compound in gas and the said plasma reaction chamber is carried out after the method for chemical reaction and before the method that the entrap bubble in the said plasma reaction chamber is taken away, this method further comprises:
Unit sends the working signal of starting working to mechanical pump;
The method that entrap bubble in the said plasma reaction chamber is taken away comprises:
After said mechanical pump receives the working signal of starting working, extract the entrap bubble in the said plasma reaction chamber.
15. a system of cleaning plasma reaction chamber is characterized in that, said system comprises:
Gas storage links to each other with said plasma reaction chamber, is used for the nitrogen trifluoride NF with storage
3Gas is input in the said plasma reaction chamber;
The radio frequency power generator links to each other with said plasma reaction chamber, and said radio frequency power generator is used to trigger said nitrogen trifluoride NF
3Silicon nitride compound in gas and the said plasma reaction chamber is carried out chemical reaction;
Mechanical pump links to each other with plasma reaction chamber, is used for the entrap bubble in the said plasma reaction chamber is taken away.
16. the system of cleaning plasma reaction chamber as claimed in claim 15 is characterized in that, said system also comprises:
Unit links to each other with said gas storage, is used for sending the working signal of starting working to gas storage;
Under meter is arranged on the inlet mouth of said plasma reaction chamber, and said under meter is used for controlling said nitrogen trifluoride NF according to first flow speed value that is provided with in advance
3Gas gets into the flow velocity of said plasma reaction chamber;
Said gas storage is used for:
After receiving working signal, to the inlet mouth input nitrogen trifluoride NF of said plasma reaction chamber
3Gas.
17. the system of cleaning plasma reaction chamber as claimed in claim 16 is characterized in that, said gas storage also is used for:
After receiving working signal, to the inlet mouth input nitrogen N of said plasma reaction chamber
2With nitrous oxide N
2O;
Said under meter also is used for:
Second flow speed value according to being provided with is in advance controlled said N
2Gas gets into the flow velocity of said plasma reaction chamber, controls said N according to the 3rd flow speed value that is provided with in advance
2O gas gets into the flow velocity of said plasma reaction chamber.
18. the system of cleaning plasma reaction chamber as claimed in claim 16 is characterized in that, said unit is further used for:
In predefined second fixed time, regulate the atmospheric pressure value in the said plasma reaction chamber, make that the atmospheric pressure value in the said plasma reaction chamber is stabilized in predefined atmospheric pressure value.
19. the system of cleaning plasma reaction chamber as claimed in claim 18 is characterized in that, said system further comprises:
Folded valve is arranged on the air outlet of said plasma reaction chamber, and said folded valve is used for self aperture is increased or reducing according to the control of said unit;
Said unit is further used for:
When the atmospheric pressure value in the said plasma reaction chamber during, control said folded valve and reduce aperture less than said predefined atmospheric pressure value; When the atmospheric pressure value in the said plasma reaction chamber during, control said folded valve and increase aperture greater than said predefined atmospheric pressure value.
20. the system of cleaning plasma reaction chamber as claimed in claim 16 is characterized in that, said unit is further used for:
Send the working signal of starting working to said radio frequency power generator;
Said radio frequency power generator is further used for:
After receiving working signal, send radiofrequency signal to said plasma reaction chamber, said radiofrequency signal is carried out photoglow, makes said nitrogen trifluoride NF
3Gas carries out chemical reaction with said silicon nitride compound after from said photoglow, obtaining energy.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104233234A (en) * | 2013-06-17 | 2014-12-24 | 沙嫣 | PECVD (plasma enhanced chemical vapor deposition) furnace with fluorine cleaning device and fluorine cleaning method of furnace |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329297B1 (en) * | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
| CN101010446A (en) * | 2004-07-27 | 2007-08-01 | 应用材料公司 | Closed loop clean gas methods and systems |
| CN101033540A (en) * | 2006-03-07 | 2007-09-12 | 韩商奥拓股份有限公司 | Apparatus for cleaning chamber using gas separation type showerhead |
-
2010
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329297B1 (en) * | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
| CN101010446A (en) * | 2004-07-27 | 2007-08-01 | 应用材料公司 | Closed loop clean gas methods and systems |
| CN101033540A (en) * | 2006-03-07 | 2007-09-12 | 韩商奥拓股份有限公司 | Apparatus for cleaning chamber using gas separation type showerhead |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104233234A (en) * | 2013-06-17 | 2014-12-24 | 沙嫣 | PECVD (plasma enhanced chemical vapor deposition) furnace with fluorine cleaning device and fluorine cleaning method of furnace |
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Application publication date: 20120516 |