CN102453438A - Polishing composition - Google Patents
Polishing composition Download PDFInfo
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- CN102453438A CN102453438A CN2010105175004A CN201010517500A CN102453438A CN 102453438 A CN102453438 A CN 102453438A CN 2010105175004 A CN2010105175004 A CN 2010105175004A CN 201010517500 A CN201010517500 A CN 201010517500A CN 102453438 A CN102453438 A CN 102453438A
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- polishing composition
- abrasive material
- out system
- polishing
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Abstract
The invention discloses a polishing composition, which is used for leveling of media among different layers and at least comprises an abrasive, a pH regulating agent, an auxiliary cleaning agent and a chelating agent. The polishing solution has the advantage of high silica removal rate, residual particles on the wafer surface can be eliminated effectively, and the polishing composition also has high leveling efficiency and stability.
Description
Technical field
The present invention relates to a kind of polishing composition that is used for the interlevel dielectric material planarization.
Background technology
Silicon-dioxide is one of dielectric material commonly used in the present semiconductor fabrication, and it is mainly used in the preceding medium of metal, in the operations such as metal interlayer medium and shallow-trench isolation; The planarization of dielectric material is to the exposure in road, back, and manufacturing process such as etching have fundamental influence, along with the propelling of technology node; Especially after getting into 45nm and following processing procedure, flatening process there have been harsh more requirement, for example planarization efficiency; Surface topography, surface contaminant amounts of particles, the quantity that surface micro scratches; Wafer scale and slice-level polishing homogeneity, and the requirement of polishing stability all reached higher level, particularly the quantitative requirement of surface particles thing and little scuffing is more strict; Usually all require below 30, scratch quantity less than 10, in addition greater than the surface micro of 0.2um; Under the energy-saving and cost-reducing overall background in the whole world, each large chip factory all faces the immense pressure of production cost, under the prerequisite of guaranteed performance; All require further to improve the production capacity of unit consumption, although the polishing of dielectric material is a volume production technology for many years, the patent of having delivered also has a lot; But be used for reducing the rarely seen report of patent of the amount of pollutants of polishing process; For example disclose a kind of cats product alkyl ammonium halide among the Chinese patent CN1352673A and be adsorbed on wafer surface protection silicon-dioxide reducing little scuffing, but this is a water-based system that does not have slurry, different with traditional CMP technology.Other mostly is the patent report US7 for example of relevant cerium oxide aspect, 708,788; US7091164 etc., but price is still high on cost, the product of for example present widely used dielectric material polishing fluid U.S. Jia Bote company; And all there is the higher present situation of cost in the product of ROHM AND HAAS, and for this reason, it is high that this patent is intended to invent a kind of polishing speed; The control of surface contaminant quantity is lower; Surface micro scratches less, and surface topography can satisfy processing requirement, the low-cost dielectric material polishing fluid that polishing performance is stable.Make the technical need of field to satisfy current chip to this product.
Summary of the invention
The objective of the invention is to overcome above-mentioned existing defective, a kind of polishing composition that is used for the interlevel dielectric material planarization is provided.
The present invention adopts following technical scheme:
The present invention discloses a kind of silica dioxide medium material polishing composition, contains a kind of abrasive material, a kind of pH regulator agent, a kind of auxiliary clean-out system, a kind of sequestrant.
Described abrasive material is the water dispersion of the silicon dioxide gel or the silica flour of being fuming; The particle diameter of said abrasive material is 40-250nm, is preferably 100-200nm.Abrasive particle content is preferably 10～20% at 5-40%.
The pH regulator agent is for example KOH of inorganic strong alkali, NaOH, and organic amine, sodium methylate for example, sodium ethylate, triethylamine, trolamine etc.
Sequestrant is a for example acetic acid of organic acid, oxalic acid, propanedioic acid, Hydrocerol A and organic phosphoric acid etc.
Auxiliary clean-out system is quaternary ammonium salt or quaternary ammonium hydroxide, TMAH for example, tetraethyl ammonium hydroxide, TPAOH, TBAH, 4-propyl bromide, tetrabutylammonium chloride etc.
The interpolation concentration of auxiliary clean-out system is 0.01-1%, and that best is 0.1-0.5%.
Above-mentioned content is mass percentage content.
Polishing composition of the present invention also comprises antimildew disinfectant.The pH value of polishing composition is at 10-12, and that best is 10.5-11.5.
Technique effect of the present invention is:
The employing silica flour of being fuming is an abrasive material, has the surface profile that higher relatively silicon-dioxide is removed speed and coupling, adopts proprietary sequestrant and quaternary ammonium hydroxide or quaternary ammonium salt to make up to reduce to polish the residual and little scuffing quantity of PM for particulate matter of crystal column surface afterwards.To satisfy more the hi-tech node to the requirement of surface contaminant index.
Description of drawings
Fig. 1 does not add the crystal column surface of Hydrocerol A and TMAH.
Fig. 2 is for adding the surface of Hydrocerol A and TMAH.
Embodiment
Come further to set forth advantage of the present invention through embodiment below.
Polishing condition: Logiteck PM50
Pressure: 4psi
Rotating speed: rubbing head rotating speed: 90 rev/mins, polishing disk rotating speed: 70 rev/mins
Polishing fluid flow: 100ml/min
Polishing time: 2min
Table 1, embodiment 1-13
In conjunction with accompanying drawing compsn of the present invention is further set forth, Fig. 1 does not add the crystal column surface of Hydrocerol A and TMAH.The silica dioxide granule of the crystal column surface polishing residual many reunions in back fails effectively to remove in follow-up cleaning.
Fig. 2 is for adding the surface of Hydrocerol A and TMAH.The surface contaminant granule number obviously reduces after adding Hydrocerol A; Continue to add TMAH, surface contaminant quantity further reduces, and is less than 30; Do not find that surface micro scratches; The surfactivity that quaternary ammonium hydroxide has has been improved the surface electrical behavior of crystal column surface and silica dioxide granule, and then has changed in the adsorptivity of crystal column surface and the reunion of self, thereby it is residual to have reduced the surface particles thing.
Claims (16)
1. a polishing composition comprises: a kind of abrasive material, a kind of pH regulator agent, a kind of auxiliary clean-out system, a kind of sequestrant.
2. polishing composition as claimed in claim 1 is characterized in that, said abrasive material is the water dispersion of the silicon dioxide gel or the silica flour of being fuming.
3. polishing composition as claimed in claim 1 is characterized in that, the particle diameter of said abrasive material is 40-250nm, and the content of said abrasive material is 5-40wt%.
4. polishing composition as claimed in claim 3 is characterized in that, the particle diameter of said abrasive material is 100-200nm, and the content of said abrasive material is 10～20wt%.
5. polishing composition as claimed in claim 1 is characterized in that, said pH regulator agent is inorganic strong alkali and/or organic amine.
6. polishing composition as claimed in claim 5 is characterized in that, said pH regulator agent is to be selected from KOH, NaOH, sodium methylate, sodium ethylate, triethylamine and the trolamine one or more.
7. polishing composition as claimed in claim 1 is characterized in that, said sequestrant is for being selected from monobasic or polycarboxylic acid, acetic acid, oxalic acid, propanedioic acid, Hydrocerol A; Perhaps organic amino acid is one or more in YD 30 etc. for example.
8. polishing composition as claimed in claim 8 is characterized in that, said organic amino acid is a b diammonium edta.
9. polishing composition as claimed in claim 1 is characterized in that, the concentration of described sequestrant is 0.01-1wt%.
10. polishing composition as claimed in claim 9 is characterized in that, the concentration of described sequestrant is 0.1-0.5wt%.
11. polishing composition as claimed in claim 1 is characterized in that, said auxiliary clean-out system is quaternary ammonium salt and/or quaternary ammonium hydroxide.
12. polishing composition as claimed in claim 11 is characterized in that, said auxiliary clean-out system is TMAH, tetraethyl ammonium hydroxide, TPAOH, TBAH, 4-propyl bromide and/or tetrabutylammonium chloride.
13. polishing composition as claimed in claim 1 is characterized in that, the concentration of said auxiliary clean-out system is 0.01-1wt%.
14. polishing composition as claimed in claim 13 is characterized in that, the concentration of said auxiliary clean-out system is 0.1-0.5wt%.
15. polishing composition as claimed in claim 1 is characterized in that, the pH value of said polishing composition is 10-12.
16. polishing composition as claimed in claim 15 is characterized in that, the pH value of said polishing composition is 10.5-11.5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105175004A CN102453438A (en) | 2010-10-22 | 2010-10-22 | Polishing composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105175004A CN102453438A (en) | 2010-10-22 | 2010-10-22 | Polishing composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102453438A true CN102453438A (en) | 2012-05-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105175004A Pending CN102453438A (en) | 2010-10-22 | 2010-10-22 | Polishing composition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102453438A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103525566A (en) * | 2013-02-09 | 2014-01-22 | 郑州新安华砂轮有限公司 | Granite abrasive cleaning agent and preparation method thereof |
| WO2023178003A1 (en) * | 2022-03-14 | 2023-09-21 | Versum Materials Us, Llc | Stable chemical mechanical planarization polishing compositions and methods for high rate silicon oxide removal |
-
2010
- 2010-10-22 CN CN2010105175004A patent/CN102453438A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103525566A (en) * | 2013-02-09 | 2014-01-22 | 郑州新安华砂轮有限公司 | Granite abrasive cleaning agent and preparation method thereof |
| WO2023178003A1 (en) * | 2022-03-14 | 2023-09-21 | Versum Materials Us, Llc | Stable chemical mechanical planarization polishing compositions and methods for high rate silicon oxide removal |
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| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120516 |