CN102446829A - Device for carrying out electroplating copper in through hole of silicon wafer - Google Patents
Device for carrying out electroplating copper in through hole of silicon wafer Download PDFInfo
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- CN102446829A CN102446829A CN2011102851071A CN201110285107A CN102446829A CN 102446829 A CN102446829 A CN 102446829A CN 2011102851071 A CN2011102851071 A CN 2011102851071A CN 201110285107 A CN201110285107 A CN 201110285107A CN 102446829 A CN102446829 A CN 102446829A
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Abstract
The invention provides a device for carrying out electroplating copper in a through hole of a silicon wafer. The device comprises one or more electroplating grooves, one or more cleaning grooves and one or more annealing cavities. The device is characterized by internally provided with one or more electrolytic cells and a silicon wafer transferring part, wherein the silicon wafer transferring part is used for transferring a silicon wafer among the electroplating groove, the cleaning groove, the annealing cavity and the electrolytic cell. A plurality of electroplating grooves, cleaning grooves and annealing cavities are arranged in the device for electroplating the copper, provided by the invention, a plurality of semiconductor silicon wafers can be simultaneously processed, and production halts of the device, caused by one equipment failure, are avoided. In addition, the electrolytic cells are provided, the problem that a gap is generated in a filling through hole is solved, the reliability of the device is increased, and a process window of copper electroplating is improved.
Description
Technical field
The present invention relates to semiconductor integrated circuit and make the field, relate in particular to a kind of device that is used for carrying out electro-coppering at the through hole of silicon chip.
Background technology
Along with the integrated level of integrated circuit improves constantly; It mainly is to take to reduce minimum feature size that existing integrated level improves; For example: minimum feature size is that 90 nanometers, minimum feature size are that 45 nanometers, minimum feature size are that 32 nanometers, minimum feature size are 22 nanometers, and this just makes can integrated more element in given zone.On the other hand, utilize the hyundai electronics encapsulation technology, (Through-Silicon-Via, TSV) technology realize that highdensity 3D (three-dimensional) is integrated, become the system-level integrated important technology approach of microelectronic circuit (comprising MEMS) like the silicon through hole.
No matter be littler characteristic size, still three-dimensional integrated all demand sides are to more and more littler through hole, increasingly high depth-to-width ratio, and this has brought many challenges to technology.Wherein the filling of through hole is exactly one of them, and filling technique can use methods such as plating, chemical vapour deposition (CVD), macromolecule coating.Because the resistance of copper is littler, and the more convenient easy row of the plating of copper, main use is the plating of copper at present.More and more littler through hole and increasingly high depth-to-width ratio make constantly to reduce at the surface of silicon chip, the sidewall of through hole and the electroplating technique window of the copper that carry out simultaneously the bottom, form hole therein through regular meeting, thereby influence the reliability of device.
One or more groups single electroplating bath, rinse bath and anneal chamber are set in the equipment of common electro-coppering, and operating process is single, can't operate normally if just whole group equipment has been gone bad in one of them groove or chamber.In addition, owing to adopt a step completion method plated metal copper, can in the metallic copper of filling, produce hole, these holes can influence the normal use of device, and pore problem can not solve the development that will hinder integrated circuit.
Summary of the invention
The present invention provides a kind of device that is used for carrying out at the through hole of silicon chip electro-coppering, can improve the electroplating technique window of copper, eliminates the hole in the through hole, improves the reliability of device.
The present invention provides a kind of device that is used for carrying out at the through hole of silicon chip electro-coppering to achieve these goals; Comprise one or more electroplating bath, one or more rinse bath and one or more anneal chamber; Also be provided with one or more electrolysis tank and silicon chip transferring elements in the device, said silicon chip transferring elements is used to realize the transmission of silicon chip between electroplating bath, rinse bath, anneal chamber and electrolysis tank.
In the above-mentioned device that provides, wherein said device also comprises the chemicals supply part.
In the above-mentioned device that provides, wherein said silicon chip transfer unit is the flexible manipulator of packaged type.
In the above-mentioned device that provides, wherein said a plurality of electroplating baths and electrolysis tank semicircular in shape are distributed in around the silicon chip transferring elements.
In the above-mentioned device that provides, silicon chip is as negative electrode in the wherein said electroplating bath.
In the above-mentioned device that provides, contain inhibitor, accelerator and smoothing agent in the electroplate liquid that uses in the wherein said electroplating bath, the molecular weight of said inhibitor is greater than the molecular weight of accelerator.
In the above-mentioned device that provides, wherein in the electrolysis tank silicon chip as anode.
In the above-mentioned device that provides, contain inhibitor, accelerator and smoothing agent in the electrolyte that uses in the wherein said electrolysis tank, the molecular weight of said accelerator is greater than the molecular weight of inhibitor.
In the above-mentioned device that provides, wherein said rinse bath is used for the cleaning silicon chip surface residue.
In the above-mentioned device that provides, wherein said anneal chamber is used for the silicon chip of filling metallic copper in the through hole is implemented annealing in process.
The through hole that is used at silicon chip provided by the invention carries out being provided with a plurality of electroplating baths, rinse bath and anneal chamber in the device of electro-coppering, can process a plurality of semi-conductor silicon chips simultaneously, has avoided causing because of one of them equipment fault the stopping production of device simultaneously.In addition, be provided with electrolysis tank and can solve the space that produces in the filling vias, improve the reliability of device, improved copper electroplating technique window.
Description of drawings
Fig. 1 carries out the electro-coppering schematic representation of apparatus at the through hole of silicon chip a kind of being used for provided by the invention.
Embodiment
The present invention provides a kind of device that is used for carrying out at the through hole of silicon chip electro-coppering; Comprise one or more electroplating bath, one or more rinse bath and one or more anneal chamber; Wherein also be provided with one or more electrolysis tank and silicon chip transferring elements in the device, the silicon chip transferring elements is used to realize the transmission of silicon chip between electroplating bath, rinse bath, anneal chamber and electrolysis tank.
The present invention is provided with a plurality of electroplating baths, rinse bath, anneal chamber and electrolysis tank in the electro-coppering device, earlier with putting into electroplating bath on the semi-conductor silicon chip, through hole is carried out partially filled, on through-hole surfaces, forms a thin metal copper layer.Put into rinse bath clean metal copper laminar surface afterwards.After cleaning finishes, putting into electrolysis tank metal copper layer is carried out the part electrolysis, mainly is for the copper attenuate with silicon chip surface and via openings place.In rinse bath with cleaning of silicon wafer clean after, put into electroplating bath once more and fill metallic copper.Constantly the process above is repeatedly filled up up to through hole fully, electroplates so repeatedly, the process of electrolysis can be so that the metallic copper that is filled in the through hole can not produce through hole.
In the equipment provided by the invention in the electroplating bath in electroplating velocity and the electrolysis tank electrolytic speed play critical effect.In the time of the electroplating bath internal reaction, the copper electroplating velocity of silicon chip surface will be slower than the copper electroplating velocity in the through hole.On the contrary, in the time of the electrolysis tank internal reaction, the cupric electrolysis speed of silicon chip surface will be faster than the cupric electrolysis speed in the through hole.
Whole electroplating process is accomplished in electroplating bath, and semi-conductor silicon chip is as negative electrode.Electroplate in the used electroplate liquid and be added with organic type additives such as inhibitor, accelerator and smoothing agent.The molecular weight of inhibitor is greater than the molecular weight of accelerator.Because the molecular weight of inhibitor is compared wanting greatly of accelerator, it mainly suppresses surperficial copper deposition through the atom site that covers the copper surface, thereby the electroplating velocity that reaches at silicon chip surface is slower than electroplating velocity in the through hole.On the contrary, because that the molecular weight of accelerator is compared is less, can be through offsetting the deposition that is used for quickening the metallic copper in the through hole of inhibitor.Under the effect of whole additive, the copper electroplating velocity in the copper electroplating velocity of silicon chip surface and the through hole can be controlled.
Whole electrolytic process is accomplished in electrolysis tank, and semi-conductor silicon chip is as anode.Be added with organic type additives such as inhibitor, accelerator and smoothing agent in the used electrolyte of electrolysis.The molecular weight of inhibitor is less than the molecular weight of accelerator.Because the molecular weight of accelerator is compared wanting greatly of inhibitor; Through offsetting the electrolysis that is used for suppressing copper in the through hole of accelerator; And the molecule of accelerator is bigger; Accelerator mainly covers the opening part of silicon chip surface and through hole, and the electrolytic process that causes being deposited on the silicon chip with the copper of the opening part of through hole is able to promote and accelerate.Under the effect of whole additive, the cupric electrolysis speed in the cupric electrolysis speed of silicon chip surface and the through hole can be controlled.
Further specify the present invention through embodiment below, so that better understand the content of the invention, but following embodiment does not limit protection scope of the present invention
As shown in Figure 1, electroplating bath 3, electrolysis tank 6, back electroplating bath 4 and rinse bath 7 before being provided with in a kind of device of electro-coppering.Electroplate filler cells 14 before wherein forming, form back plating filler cells 13 by electroplating bath 4 after 3 by 2 preceding electroplating baths 3.Before the chemical industry stostes used in electroplating bath 3, back electroplating bath 4, electrolysis tank 6 and the rinse bath 7 supply through being arranged in the electro-coppering device chemicals supply system.
In the electro-coppering device, carry out part in the electroplating bath 3 before through silicon chip transferring elements 5 pending semi-conductor silicon chip 2 being sent to and fill, accomplish to send in the rinse bath 7 after the local filling and clean.In electroplating bath, semi-conductor silicon chip participates in the electrochemical reaction as negative electrode, and the electroplate liquid in the electroplating bath contains combination of organic additives such as inhibitor and accelerator.Because the molecule of inhibitor is bigger, mainly suppress surperficial copper deposition through the atom site that covers the copper surface, the molecule of accelerator is less, through offsetting the deposition that is used for quickening the ditch buried copper of inhibitor.
After clean accomplishing, semi-conductor silicon chip 2 sent in the electrolysis tank 6 metal copper layer of having filled in the through hole is carried out electrolysis, remove part metals copper.After accomplishing the part electrolysis, semi-conductor silicon chip 2 sent in the rinse bath 7 clean.In electrolysis tank, semi-conductor silicon chip participates in the electrochemical reaction as anode, and the electrolyte in the electrolysis tank contains combination of organic additives such as inhibitor, accelerator and smoothing agent.Because the molecule of inhibitor is less, through offsetting the electrolysis that is used for suppressing the ditch buried copper of accelerator, the molecule of accelerator is bigger, promotes the electrolysis of surperficial copper at silicon chip surface and via openings place.Employed accelerator, inhibitor and other additives all belong to present technique known general knowledge among the present invention, and present technique field personnel select corresponding accelerator and inhibitor for use according to the practical operation situation.
After accomplish cleaning, semi-conductor silicon chip 2 delivered to carry out second time in the electroplating bath 4 of back and electroplate, cleaning once more, electrolysis and cleaning afterwards, repeated multiple times plating-electrolytic process is filled in through hole expires metallic copper.The semi-conductor silicon chip 2 of filling full metallic copper in the through hole delivered in the rinse bath 7 clean, clean and remove other residual on the semi-conductor silicon chip 2 solution.Send into after cleaning up and carry out annealing in process in the anneal chamber 3.
Electro-coppering device provided by the invention can be processed a plurality of semi-conductor silicon chips simultaneously, has avoided causing because of one of them equipment fault the stopping production of device simultaneously.In addition, be provided with electrolysis tank and can solve the space that produces in the filling vias, improve the reliability of device, improved copper electroplating technique window.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (10)
1. device that is used for carrying out electro-coppering at the through hole of silicon chip; Comprise one or more electroplating bath, one or more rinse bath and one or more anneal chamber; It is characterized in that; Also be provided with one or more electrolysis tank and silicon chip transferring elements in the device, said silicon chip transferring elements is used to realize the transmission of silicon chip between electroplating bath, rinse bath, anneal chamber and electrolysis tank.
2. device according to claim 1 is characterized in that said device also comprises the chemicals supply part.
3. device according to claim 1 is characterized in that, said silicon chip transfer unit is the flexible manipulator of packaged type.
4. device according to claim 1 is characterized in that, said a plurality of electroplating baths and electrolysis tank semicircular in shape are distributed in around the silicon chip transferring elements.
5. device according to claim 1 is characterized in that silicon chip is as negative electrode in the said electroplating bath.
6. device according to claim 1 is characterized in that, contains inhibitor, accelerator and smoothing agent in the electroplate liquid that uses in the said electroplating bath, and the molecular weight of said inhibitor is greater than the molecular weight of accelerator.
7. device according to claim 1 is characterized in that silicon chip is as anode in the said electrolysis tank.
8. device according to claim 1 is characterized in that, contains inhibitor, accelerator and smoothing agent in the electrolyte that uses in the said electrolysis tank, and the molecular weight of said accelerator is greater than the molecular weight of inhibitor.
9. device according to claim 1 is characterized in that said rinse bath is used for the cleaning silicon chip surface residue.
10. device according to claim 1 is characterized in that, said anneal chamber is used for the silicon chip of filling metallic copper in the through hole is implemented annealing in process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011102851071A CN102446829A (en) | 2011-09-23 | 2011-09-23 | Device for carrying out electroplating copper in through hole of silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011102851071A CN102446829A (en) | 2011-09-23 | 2011-09-23 | Device for carrying out electroplating copper in through hole of silicon wafer |
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| CN102446829A true CN102446829A (en) | 2012-05-09 |
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| CN2011102851071A Pending CN102446829A (en) | 2011-09-23 | 2011-09-23 | Device for carrying out electroplating copper in through hole of silicon wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105097652A (en) * | 2014-05-07 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for semiconductor device |
| CN112708926A (en) * | 2020-12-16 | 2021-04-27 | 上海华力微电子有限公司 | Buffer device for copper electroplating machine table and copper electroplating machine table |
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Patent Citations (6)
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| TW567580B (en) * | 2000-10-13 | 2003-12-21 | Sony Corp | Semiconductor manufacturing device and manufacturing method for semiconductor device |
| JP2003096596A (en) * | 2001-09-25 | 2003-04-03 | Ebara Corp | Plating method and plating equipment |
| CN101101861A (en) * | 2002-05-17 | 2008-01-09 | 株式会社荏原制作所 | Substrate processing apparatus and substrate processing method |
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| CN105097652A (en) * | 2014-05-07 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for semiconductor device |
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| CN112708926A (en) * | 2020-12-16 | 2021-04-27 | 上海华力微电子有限公司 | Buffer device for copper electroplating machine table and copper electroplating machine table |
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Application publication date: 20120509 |