CN112708926A - Buffer device for copper electroplating machine table and copper electroplating machine table - Google Patents
Buffer device for copper electroplating machine table and copper electroplating machine table Download PDFInfo
- Publication number
- CN112708926A CN112708926A CN202011483323.2A CN202011483323A CN112708926A CN 112708926 A CN112708926 A CN 112708926A CN 202011483323 A CN202011483323 A CN 202011483323A CN 112708926 A CN112708926 A CN 112708926A
- Authority
- CN
- China
- Prior art keywords
- wafer
- buffer
- copper electroplating
- electroplating machine
- machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67766—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67775—Docking arrangements
Abstract
The invention provides a buffer device for a copper electroplating machine and the copper electroplating machine, wherein the copper electroplating machine comprises an electroplating liquid tank, an electroplating bath, an edge washing tank, an annealing cavity, a wafer transfer part and a buffer device, wherein the buffer device forms a sealed buffer space and comprises a buffer tank and a protective gas circulating device, the buffer tank is used for placing a wafer, and the protective gas circulating device is used for providing protective gas and promoting the protective gas to circularly flow in the buffer space. Therefore, the buffering device is arranged in the copper electroplating machine, so that the wafer can be transmitted to the buffering device for protection when the copper electroplating machine gives an alarm in the electroplating process, defects formed on the wafer are avoided, and the production cost is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a buffer device for a copper electroplating machine and the copper electroplating machine.
Background
With the continuous progress of the integrated circuit manufacturing process and the continuous increase of the chip integration level, copper interconnects have replaced aluminum interconnects to become the mainstream interconnect technology in the manufacture of very large scale integrated circuits. As an alternative to aluminum, copper wire can increase the integration of chips, increase device density, increase clock frequency, and reduce power consumption and cost.
The existing copper electroplating process comprises three processes of electroplating, edge washing and annealing, a used copper electroplating machine is unsealed, the electroplating environment inside the machine is easily influenced by the external environment, copper sulfate in an electroplating cavity volatilizes acid gas, and the volatilization amount of the acid gas is increased in the frequent electroplating operation process. Therefore, in the electroplating process, when the machine station gives an alarm, the wafer cannot be transmitted to the next process step after the current process step is completed, and the following influences are generated:
1) copper seeds deposited on the wafer which is not electroplated can not enter the electroplating bath for a long time, and can be oxidized when exposed in the atmospheric environment, so that the electroplating can not be carried out, and the defects of metal damage, holes and the like are generated;
2) after the electroplated wafer is exposed to an acid environment for a long time, the copper electroplated on the surface is corroded, and defects such as metal damage and the like are generated.
Disclosure of Invention
The invention aims to provide a buffer device for a copper electroplating machine and the copper electroplating machine, so as to solve the problem that in the prior art, when the copper electroplating machine fails, gives an alarm and stops running in the electroplating process, no protective measures are taken for a wafer in the machine, and a defect is formed on the wafer. The specific technical scheme is as follows:
in a first aspect, the invention provides a buffer device for a copper electroplating machine, which is arranged in the copper electroplating machine to form a sealed buffer space, and comprises a buffer tank and a protective gas circulating device, wherein the buffer tank is used for placing a wafer, and the protective gas circulating device is used for providing protective gas and promoting the protective gas to circularly flow in the buffer space.
Optionally, the buffer tank is provided in plurality.
Optionally, a plurality of the buffer slots are arranged side by side at equal intervals.
Optionally, the protective gas is nitrogen.
In a second aspect, the present invention provides a copper electroplating machine, comprising an electroplating bath, an edge washing tank, an annealing chamber, a wafer transfer component and the buffering device as claimed in any one of claims 1 to 4, wherein the wafer transfer component is used for transferring a wafer in the copper electroplating machine.
Optionally, the wafer processing device further comprises an alignment table, wherein the alignment table is used for aligning the wafer, so that the center of the wafer is aligned with the center of the alignment table.
Optionally, there are 3 wafer transfer components, which are respectively a first wafer transfer component, a second wafer transfer component and a third transfer component;
the first wafer transfer component is used for transferring the wafer from the outside of the machine table to the alignment table;
the second transfer component is used for realizing the transfer of the wafer among the alignment table, the electroplating bath, the edge washing bath and the annealing chamber;
the third wafer transfer component is arranged outside the buffer device and used for transferring the wafer into or out of the buffer space.
Optionally, the wafer transfer component is a telescopic manipulator.
Optionally, the number of the electroplating baths is multiple, and the number of the edge washing baths is multiple.
Optionally, the plurality of plating tanks and the plurality of edge washing tanks are distributed around the second wafer transfer part in a semicircular shape.
Compared with the prior art, the buffer device for the copper electroplating machine and the copper electroplating machine provided by the invention have the following advantages: the copper electroplating machine comprises an electroplating liquid tank, an electroplating bath, an edge washing tank, an annealing cavity, a wafer transfer part and a buffer device, wherein the buffer device forms a sealed buffer space and comprises a buffer tank and a protective gas circulating device, the buffer tank is used for placing wafers, and the protective gas circulating device is used for providing protective gas and promoting the protective gas to circularly flow in the buffer space. Therefore, the buffering device is arranged in the copper electroplating machine, so that the wafer can be transmitted to the buffering device for protection when the copper electroplating machine gives an alarm in the electroplating process, defects formed on the wafer are avoided, and the production cost is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a buffer device for a copper electroplating machine according to an embodiment of the present invention;
FIG. 2 is a schematic view of a copper electroplating apparatus according to an embodiment of the present invention;
wherein the reference numerals of figures 1-2 are as follows:
1-a wafer; 2-wafer cassette; 3-a first wafer transfer component; 4-an alignment stage; 5-electroplating bath; 6-a second wafer transfer component; 7-washing the edge groove; 8-electroplating liquid tank; 9-an annealing cavity; 10-a buffer device; 101-a buffer tank; 102-a shielding gas circulation device; 11-third wafer transfer means.
Detailed Description
In order to make the objects, advantages and features of the present invention more clear, the buffering device for copper electroplating machine and the copper electroplating machine proposed by the present invention will be further described in detail with reference to the accompanying drawings. It should be noted that the drawings are simplified in form and not to precise scale, and are only used for convenience and clarity to assist in describing the embodiments of the present invention, but not for limiting the implementation of the present invention, and therefore, the present invention is not limited by the scope of the present invention.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As described in the background art, the conventional copper electroplating process includes three processes of electroplating, edge washing and annealing, the used copper electroplating machine is not sealed, the electroplating environment inside the machine is easily affected by the external environment, and the copper sulfate in the electroplating chamber volatilizes acid gas, so that the volatilization amount of the acid gas is increased in the frequent electroplating operation process. Therefore, in the electroplating process, when the machine station gives an alarm, the wafer cannot be transmitted to the next process step after the current process step is completed, and the following influences are generated:
1) copper seeds deposited on an unplated wafer can not enter the electroplating bath for a long time, and can be oxidized when exposed in the atmospheric environment, so that electroplating can not be carried out, and defects such as metal Damage (metal), void (void) and the like are generated;
2) after the plating, the copper plated on the surface of the wafer is corroded by long-term exposure to an acidic environment, and defects such as metal Damage (metal Damage) are generated.
Therefore, the core idea of the invention is to provide a buffer device for a copper electroplating machine and the copper electroplating machine, so that when an alarm occurs in the copper electroplating machine during electroplating, a wafer can be transmitted to the buffer device for protection, thereby avoiding defects on the wafer.
In order to achieve the above idea, the present invention provides a buffer device for a copper electroplating machine, referring to fig. 1, the buffer device 10 is disposed in the copper electroplating machine and forms a sealed buffer space to ensure that an environmental atmosphere of the buffer space is not interfered by an external environment, the buffer device 10 includes a buffer tank 101 and a protective gas circulation device 102, the buffer tank 101 is used for placing a wafer 1, and the protective gas circulation device 102 is used for providing a protective gas and promoting the protective gas to circulate in the buffer space, so as to avoid defects caused by oxidation and/or corrosion of the wafer 1.
Further, the buffer slots 102 are provided in plurality, and the plurality of buffer slots 102 are arranged side by side at equal intervals. The buffer tanks 102 are arranged orderly, which is beneficial to operation management, and in addition, the distance between two adjacent buffer tanks 102 can not be too small, which is beneficial to the taking/placing operation of the wafer 1 in the buffer tanks 102 and is beneficial to increasing the contact space between the protective gas and the wafer 1.
Furthermore, the protective gas is nitrogen which has stable property, no toxicity, no harm, wide source and low market price.
Based on the same inventive concept, the present embodiment further provides a copper electroplating machine, referring to fig. 2, the copper electroplating machine includes an electroplating liquid tank 8, an electroplating tank 5, an edge washing tank 7, an annealing chamber 9, a wafer transfer component and the buffer device 10, wherein the electroplating liquid tank 8 is used for storing an electroplating solution (such as a copper sulfate solution) and providing the electroplating tank 5 with the electroplating solution (such as a copper sulfate solution), and the wafer transfer component is used for transferring the wafer 1 in the machine.
Further, the copper electroplating machine table further comprises an alignment table 4, wherein the alignment table 4 is used for aligning the center of the wafer 1, so that the center of the wafer 1 is aligned with the center of the alignment table, and the wafer 1 is prevented from being shifted to affect the subsequent working efficiency.
Furthermore, the number of the wafer transfer parts is 3, and the wafer transfer parts are respectively a first wafer transfer part 3, a second wafer transfer part 6 and a third transfer part 11. Wherein the first wafer transfer component 3 is used for transferring the wafer 1 from the outside of the wafer stage to the alignment stage 4, the second transfer component 6 is used for transferring the wafer 1 among the alignment stage 4, the plating tank 5, the edge washing tank 7 and the annealing chamber 9, and the third wafer transfer component 11 is arranged outside the buffer device 10 and is used for transferring the wafer 1 into or out of the buffer space. Preferably, the wafer transfer part is a telescopic manipulator which is sensitive in action and small in occupied space.
Further, the number of the electroplating baths 5 is plural, for example, 3, and the number of the edge washing baths 7 is plural, for example, 3, so that the working strength of the copper electroplating machine (the electroplating process of 3 wafers 1 can be simultaneously performed) can be increased, and the working efficiency of the copper electroplating machine can be increased. In addition, the plurality of plating tanks 5 and the plurality of edge-washing tanks 7 are distributed around the second wafer transfer part 6 in a semicircular shape, so that the second wafer transfer part 6 can conveniently take/place the wafer 1.
In practical application, the working principle of the copper electroplating machine provided by the embodiment is as follows:
firstly, the first wafer transfer part 3 takes out the wafer 1 to be electroplated from the wafer box 2 on the copper electroplating machine, and transferring the wafer 1 to an alignment table 4 in a copper electroplating machine, then performing center alignment on the wafer 1 on the alignment table 4, after the center alignment of the wafer 1, the second wafer transfer part 6 takes the wafer 1 from the alignment stage 4 and transfers the wafer 1 to the plating tank 5 for plating, and after the plating is completed, the second wafer transfer member 6 takes out the wafer 1 from the plating tank 5 and transfers the wafer 1 to the edge washing tank 7 for edge washing, and the second wafer transfer part 6 takes the wafer 1 out of the edge washing groove 7 and transfers the wafer 1 into the annealing chamber 9 for annealing, so that all electroplating processes are completed, and finally the second wafer transfer part 6 transfers the wafer 1 out of a copper electroplating machine for the next process.
It can be understood that, according to the program setting, the first wafer transfer part 3 will perform the next operation after completing the current operation, and in this embodiment, at most 6 wafers in the copper electroplating machine may be subjected to the electroplating process step, but the processing progress is asynchronous and the state is different.
In the electroplating process, an alarm is given to a copper electroplating machine, when the machine stops working, the wafer 1 cannot be conveyed to the next process step after the current process step is completed, at this time, the third transfer component 11 sequentially transfers the wafer 1 on the alignment table 4, in the electroplating bath 5, in the edge washing tank 7 and in the annealing chamber 9 into the buffer device 10 and places the wafer 1 in the buffer tank 102, and the protective gas circulation device 102 continuously provides protective gas (preferably nitrogen) and promotes the protective gas to circularly flow in the buffer space to protect the wafer 1, so that the wafer 1 is prevented from being oxidized and/or corroded to generate defects. And when the alarm of the copper electroplating machine disappears, the machine recovers to normal operation, the third wafer transfer part 11 sequentially takes out the wafers 1 from the buffer tank 102 and transfers the wafers out of the buffer space, and the wafers are respectively placed at the original positions and respectively continue to perform the next electroplating process step.
In summary, compared with the prior art, the buffer device for the copper electroplating machine and the copper electroplating machine provided by the invention have the following advantages: the copper electroplating machine comprises an electroplating liquid tank, an electroplating bath, an edge washing tank, an annealing cavity, a wafer transfer part and a buffer device, wherein the buffer device forms a sealed buffer space and comprises a buffer tank and a protective gas circulating device, the buffer tank is used for placing wafers, and the protective gas circulating device is used for providing protective gas and promoting the protective gas to circularly flow in the buffer space. Therefore, the buffering device is arranged in the copper electroplating machine, so that the wafer can be transmitted to the buffering device for protection when the copper electroplating machine gives an alarm in the electroplating process, defects formed on the wafer are avoided, and the production cost is reduced.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. The utility model provides a buffer for copper electroplating machine, arranges copper electroplating machine in, its characterized in that forms sealed buffer space, includes buffer tank and protective gas circulating device, the buffer tank is used for placing the wafer, protective gas circulating device is used for providing protective gas and promotes protective gas is in buffer space inner loop flows.
2. The buffer device for the copper electroplating machine according to claim 1, wherein a plurality of buffer grooves are arranged.
3. The buffer device for copper electroplating machine according to claim 2, wherein a plurality of buffer grooves are arranged side by side at equal intervals.
4. The buffer device as claimed in claim 1, wherein the shielding gas is nitrogen.
5. A copper electroplating machine is characterized by comprising an electroplating solution tank, an electroplating bath, an edge washing tank, an annealing cavity, a wafer transfer part and a buffer device according to any one of claims 1 to 4, wherein the wafer transfer part is used for realizing the transfer of wafers in the copper electroplating machine.
6. The copper electroplating machine of claim 5, further comprising an alignment table for aligning a wafer such that a center of the wafer is aligned with a center of the alignment table.
7. The copper electroplating machine as claimed in claim 6, wherein there are 3 wafer transfer parts, which are respectively a first wafer transfer part, a second wafer transfer part and a third transfer part;
the first wafer transfer component is used for transferring the wafer from the outside of the machine table to the alignment table;
the second transfer component is used for realizing the transfer of the wafer among the alignment table, the electroplating bath, the edge washing bath and the annealing chamber;
the third wafer transfer component is arranged outside the buffer device and used for transferring the wafer into or out of the buffer space.
8. The copper electroplating machine according to claim 5, 6 or 7, wherein the wafer transfer component is a telescopic robot.
9. The copper electroplating machine of claim 7, wherein the number of the electroplating baths is multiple, and the number of the edge washing baths is multiple.
10. The copper electroplating machine of claim 9, wherein the plurality of electroplating baths and the plurality of edge washing baths are distributed in a semicircular shape around the second wafer transfer part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011483323.2A CN112708926A (en) | 2020-12-16 | 2020-12-16 | Buffer device for copper electroplating machine table and copper electroplating machine table |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011483323.2A CN112708926A (en) | 2020-12-16 | 2020-12-16 | Buffer device for copper electroplating machine table and copper electroplating machine table |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112708926A true CN112708926A (en) | 2021-04-27 |
Family
ID=75542120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011483323.2A Pending CN112708926A (en) | 2020-12-16 | 2020-12-16 | Buffer device for copper electroplating machine table and copper electroplating machine table |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112708926A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1531747A (en) * | 2001-03-14 | 2004-09-22 | 美商・应用材料股份有限公司 | Planarization of substrates using electrochemical mechanical polishing |
| US20070267461A1 (en) * | 2006-05-17 | 2007-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process apparatuses |
| CN102412136A (en) * | 2011-05-13 | 2012-04-11 | 上海华力微电子有限公司 | Chemical mechanical polishing apparatus for eliminating protuberance of a metal surface and method thereof |
| CN102446829A (en) * | 2011-09-23 | 2012-05-09 | 上海华力微电子有限公司 | Device for carrying out electroplating copper in through hole of silicon wafer |
| US20150096883A1 (en) * | 2009-06-17 | 2015-04-09 | Novellus Systems, Inc. | Apparatus for wetting pretreatment for enhanced damascene metal filling |
-
2020
- 2020-12-16 CN CN202011483323.2A patent/CN112708926A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1531747A (en) * | 2001-03-14 | 2004-09-22 | 美商・应用材料股份有限公司 | Planarization of substrates using electrochemical mechanical polishing |
| US20070267461A1 (en) * | 2006-05-17 | 2007-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process apparatuses |
| US20150096883A1 (en) * | 2009-06-17 | 2015-04-09 | Novellus Systems, Inc. | Apparatus for wetting pretreatment for enhanced damascene metal filling |
| CN102412136A (en) * | 2011-05-13 | 2012-04-11 | 上海华力微电子有限公司 | Chemical mechanical polishing apparatus for eliminating protuberance of a metal surface and method thereof |
| CN102446829A (en) * | 2011-09-23 | 2012-05-09 | 上海华力微电子有限公司 | Device for carrying out electroplating copper in through hole of silicon wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102569171B (en) | Wiring structure for improving crown-like defect and fabrication method thereof | |
| US6811672B2 (en) | Method for forming plating film and electronic component having plating film formed theron by same method | |
| JP2004353004A (en) | Plating device | |
| CN113891557A (en) | Printed circuit board manufacturing method | |
| CN112708926A (en) | Buffer device for copper electroplating machine table and copper electroplating machine table | |
| KR102279435B1 (en) | Substrate manufacturing method and substrate | |
| US6203690B1 (en) | Process of reworking pin grid array chip carriers | |
| CN100525585C (en) | Manufacturing methods and electroless plating apparatus for manufacturing wiring circuit boards | |
| TW201448141A (en) | Nickel and gold electroplating product of wafer and method for manufacturing nickel and gold electroplating product | |
| CN213635983U (en) | Semiconductor device and electronic apparatus | |
| US20120181691A1 (en) | Package structure, packaging substrate and chip | |
| JP2022082619A (en) | PCB terminal manufacturing method and PCB terminal | |
| KR102494899B1 (en) | plating device | |
| WO2022254579A1 (en) | Plating device and plating method | |
| CN105870100A (en) | Ultrathin packaging component and manufacturing technique thereof | |
| JP2004218011A (en) | Electrolytic plating apparatus | |
| TWI833972B (en) | Substrate holder and plating device | |
| KR100593890B1 (en) | Manufacturing method of LED package with lead frame | |
| CN101145542A (en) | Method of manufacturing a composite of copper and resin | |
| US20150179594A1 (en) | Package substrate and method for manufacturing the same | |
| JP3125874B2 (en) | Surface treatment method and surface treatment device for semiconductor device | |
| KR100253703B1 (en) | Surface treatment process of ceramic package | |
| CN115172314A (en) | Jig for loading packaging structure, deburring method and packaging structure | |
| JP6589577B2 (en) | Manufacturing method of lead frame substrate with resin | |
| TWI461131B (en) | Plating and etching system and plating and etching method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210427 |