CN102445567A - Monitoring method of environmental magnetic shield of electronic scanning microscope - Google Patents
Monitoring method of environmental magnetic shield of electronic scanning microscope Download PDFInfo
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- CN102445567A CN102445567A CN2011103079878A CN201110307987A CN102445567A CN 102445567 A CN102445567 A CN 102445567A CN 2011103079878 A CN2011103079878 A CN 2011103079878A CN 201110307987 A CN201110307987 A CN 201110307987A CN 102445567 A CN102445567 A CN 102445567A
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Abstract
The invention discloses a monitoring method of an environmental magnetic shield of an electronic scanning microscope, and the monitoring method comprises the following steps that a line drawing of a silicon wafer to be measured is selected; a plurality of measuring points are selected on one side of the line drawing, measuring data of the measuring points are collected, and measuring data of relative points of the measuring points are collected on the other side of the line drawing; first difference values among the measuring data of corresponding points on the two sides of the line drawing are calculated; the maximum difference value and the minimum difference value among the first difference values are obtained, and a second difference value between the maximum difference value and the minimum difference value is calculated and is used as a measuring result; the measuring result is recorded in an environmental magnetic shield influence control chart; and according to the measuring result recorded in the environmental magnetic shield influence control chart every time, a dynamic monitoring chart of the influence of the environmental magnetic shield is obtained. The invention provides the method for monitoring the environmental magnetic shield of the electronic scanning microscope by utilizing the line width and the line width roughness of the measured drawing.
Description
Technical field
The present invention relates to a kind of magnetic field detection method, relate in particular to a kind of monitoring method of scanning electron microscope environmental magnetic field.
Background technology
Modern large scale integrated circuit manufacturing forms various component graphics through photoetching process and etching technics on silicon chip.Along with constantly dwindling of graphics critical dimension, require increasingly high to its levels of precision.Scanning electron microscope is the important instrument of measurement pattern critical size, when its principle is the inswept body surface of controlled electron beam, can produce the secondary electron of varying number in the zones of different on surface, collects secondary electron, can generate the image of measured figure.
If the interference of external magnetic field is arranged, scanning beam will be interfered in magnetic field, thereby cause measurement result that deviation is arranged.Usually, scanning electron microscope to measure and eliminate the influence of environmental magnetic field before installing to environmental magnetic field.This method can be eliminated the influence of the environmental magnetic field of continuation effectively, but then can't monitor sporadic environmental magnetic field influence.Sporadic environmental magnetic field is because it is sporadic, and magnetic field the source takes place is difficult for usually confirming and eliminating.Under the environment that has sporadic environmental magnetic field, produce, need monitor the influence of sporadic environmental magnetic field.
Sporadic environmental magnetic field can influence the measurement of part silicon chip.If the affected measurement of judgement that can not be promptly and accurately causes erroneous judgement, perhaps cause unnecessary shutdown inspection, perhaps produce unnecessary product rejection.
The method in existing measurement scanning electron microscope magnetic field is to adopt special measuring equipment, monitors at the time point of plan.This method can be monitored the environmental magnetic field of continuation, but can not monitor sporadic environmental magnetic field effectively.Monitoring to sporadic environmental magnetic field needs a kind of dynamic monitoring method.
Summary of the invention
To the problem of above-mentioned existence, the purpose of this invention is to provide the carry out monitoring method of a kind of live width or line width roughness by measurement pattern to the scanning electron microscope environmental magnetic field.Environmental magnetic field can exert an influence to the metric data of scanning electron microscope.Through processing to metric data, set up dynamic monitoring figure, realize dynamic monitoring to the scanning electron microscope environmental magnetic field.
The objective of the invention is to realize through following technical proposals:
A kind of monitoring method of scanning electron microscope environmental magnetic field wherein, may further comprise the steps:
One bargraphs of selected required measurement silicon chip;
Side at said bargraphs is chosen a plurality of measurement points, and gathers the metric data of said measurement point, takes the metric data of the corresponding point of said measurement point at its opposite side;
Calculate first difference between the said metric data of the corresponding point in said bargraphs both sides respectively;
Obtain maximum difference and minimal difference among said first difference that calculates, and calculate second difference between said maximum difference and the said minimal difference, with said second difference as measurement result;
Said measurement result is recorded in environmental magnetic field to be influenced in the control chart;
According to the said measurement result that is recorded in the said environmental impact control chart at every turn, obtain the dynamic monitoring figure of environmental magnetic field influence;
According to said dynamic monitoring figure, the environmental magnetic field of monitoring sweep electron microscope changes, and judges the processing scheme to said silicon chip.
The monitoring method of above-mentioned scanning electron microscope environmental magnetic field, wherein, the multiple spot live width measurement pattern of electron microscope is obtained said metric data when utilizing scanning.
The monitoring method of above-mentioned scanning electron microscope environmental magnetic field, wherein, said bargraphs is once overexposure and the photoresist lines figure after developing.
The monitoring method of above-mentioned scanning electron microscope environmental magnetic field, wherein, said bargraphs is the substrate bargraphs after the etching.
The monitoring method of above-mentioned scanning electron microscope environmental magnetic field wherein, is a time keeping unit with the sky, writes down said measurement result;
The monitoring method of above-mentioned scanning electron microscope environmental magnetic field, wherein, with seven days be one-period, draw out the said measurement result of every day in said control chart China, obtain the dynamic monitoring figure of said environmental magnetic field influence.
Compared with present technology, beneficial effect of the present invention is:
The present invention is through measuring the live width or the line width roughness of bargraphs:
The first, the dynamic monitoring method to the scanning electron microscope environmental magnetic field is provided;
The second, avoided erroneous judgement through dynamic monitoring to affected measurement.
The 3rd, draw the environmental magnetic field situation of change of sweep electron microscope through this The dynamic monitor result, thereby can judge the processing scheme of the silicon chip that is measured based on this.
Description of drawings
Fig. 1 is the process flow diagram of the monitoring method of a kind of scanning electron microscope environmental magnetic field of the present invention.
Fig. 2 is the synoptic diagram that carries out the bargraphs of multiple point measuring data acquisition.
Embodiment
Below in conjunction with schematic diagram and concrete operations embodiment the present invention is described further.
Like Fig. 1, shown in Figure 2, the monitoring method of a kind of scanning electron microscope environmental magnetic field of the present invention wherein, may further comprise the steps:
Step 1: utilize scanning electron microscope that one silicon chip is scanned, obtain the bargraphs of silicon chip.
In this step, selected bargraphs can be any process polishing of measurement and photoresist lines figure after the development of needing, and can also be the substrate bargraphs after over etching.
Step 2: a selected wherein side of a segment figure 1 in bargraphs, selected a plurality of measurement points 2 and the metric data of obtaining, and on the bargraphs opposite side, carrying out the collection of measurement data with the corresponding point 3 of measurement point.
In the enforcement, the metric data of each measurement point 2 that the multiple spot live width measurement pattern of electron microscope is got during with scanning on a selected end figure 1, then, to the opposite side of bargraphs 1 on carry out data acquisition with measurement point 2 corresponding points 3, and record.
Step 3: calculate first difference between the measured data of the corresponding point in bargraphs 1 both sides 2,3 respectively;
In this step; Be divided into one group with the data of the gauge point 2 that obtains in the step 2 with the measurement data of gauge point 2 corresponding points 3, thereby, according to the number of the gauge point of choosing 2,3; It is divided into groups one by one; Respectively every group of data are carried out difference then and calculate, draw every group of gauge point 2, the difference between 3, as first difference.
Step 4: compare maximum difference and minimal difference in first difference, and calculate the difference between maximum difference and the minimal difference, as second difference;
In this step, promptly keep as measurement result through calculating second difference that obtains.
Step 5: second difference is recorded in environmental magnetic field to be influenced in the control chart.
In this step, drawing one is that the environmental magnetic field of chronomere influence control chart with the sky, will pass through second difference of abovementioned steps acquisition, and promptly measurement result is recorded in wherein.In control chart, draw out the measurement result that obtained the same day then.
Step 6:, obtain the dynamic monitoring figure of environmental magnetic field influence according to second difference in the control chart of each record.
In the enforcement, with seven days be one-period, one day is chronomere, in control chart, draws out seven days measurement result, and each point is connected with straight line, the icon of acquisition is the dynamic monitoring figure of environmental magnetic field influence.
Step 7: according to dynamic monitoring figure, the environmental magnetic field of electron microscope changes when detecting scanning, and judges the processing scheme to silicon chip.
More than specific embodiment of the present invention is described in detail, but the present invention is not restricted to the specific embodiment of above description, it is just as example.To those skilled in the art, any to this equivalent modifications of carrying out and alternative also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of having done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (6)
1. the monitoring method of a scanning electron microscope environmental magnetic field utilizes scanning electron microscope that one silicon chip is scanned, and obtains the bargraphs of said silicon chip, it is characterized in that, may further comprise the steps:
Choose a plurality of measurement points in the selected wherein side of a segment figure of said bargraphs, and gather the metric data of said measurement point, take the metric data of the corresponding point of said measurement point at its opposite side;
Calculate first difference between the said metric data of selected corresponding point respectively;
Obtain maximum difference and minimal difference among said first difference that calculates, and calculate second difference between said maximum difference and the said minimal difference, with said second difference as measurement result;
Said measurement result is recorded in environmental magnetic field to be influenced in the control chart;
According to the said measurement result that is recorded in the said environmental impact control chart at every turn, obtain the dynamic monitoring figure of environmental magnetic field influence;
According to said dynamic monitoring figure, the environmental magnetic field of monitoring sweep electron microscope changes, and judges the processing scheme to said silicon chip.
2. the monitoring method of scanning electron microscope environmental magnetic field according to claim 1 is characterized in that, the multiple spot live width measurement pattern of electron microscope is obtained said metric data when utilizing scanning.
3. the monitoring method of scanning electron microscope environmental magnetic field according to claim 1 is characterized in that, said bargraphs is once overexposure and the photoresist lines figure after developing.
4. the monitoring method of scanning electron microscope environmental magnetic field according to claim 1 is characterized in that, said bargraphs is the substrate bargraphs after the etching.
5. the monitoring method of scanning electron microscope environmental magnetic field according to claim 1 is characterized in that, is chronomere with the sky.
6. according to the monitoring method of claim 1 or 5 described scanning electron microscope environmental magnetic fields, it is characterized in that, with seven days be one-period, draw out the said measurement result of every day in said control chart China, obtain the dynamic monitoring figure of said environmental magnetic field influence.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110307987 CN102445567B (en) | 2011-10-12 | 2011-10-12 | Monitoring method of environmental magnetic shield of electronic scanning microscope |
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| CN 201110307987 CN102445567B (en) | 2011-10-12 | 2011-10-12 | Monitoring method of environmental magnetic shield of electronic scanning microscope |
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| CN102445567A true CN102445567A (en) | 2012-05-09 |
| CN102445567B CN102445567B (en) | 2013-06-26 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5866806A (en) * | 1996-10-11 | 1999-02-02 | Kla-Tencor Corporation | System for locating a feature of a surface |
| JP3076889B2 (en) * | 1993-09-02 | 2000-08-14 | セイコーインスツルメンツ株式会社 | Magnetic force microscope |
| JP2002090434A (en) * | 2000-09-18 | 2002-03-27 | Kajima Corp | Magnetic shield constructing method |
| CN1639538A (en) * | 2002-02-26 | 2005-07-13 | 国际壳牌研究有限公司 | Measurement method for determining a surface profile |
| CN101206456A (en) * | 2006-12-18 | 2008-06-25 | 占礼葵 | Position measurement time space parameter through switching clock |
-
2011
- 2011-10-12 CN CN 201110307987 patent/CN102445567B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3076889B2 (en) * | 1993-09-02 | 2000-08-14 | セイコーインスツルメンツ株式会社 | Magnetic force microscope |
| US5866806A (en) * | 1996-10-11 | 1999-02-02 | Kla-Tencor Corporation | System for locating a feature of a surface |
| JP2002090434A (en) * | 2000-09-18 | 2002-03-27 | Kajima Corp | Magnetic shield constructing method |
| CN1639538A (en) * | 2002-02-26 | 2005-07-13 | 国际壳牌研究有限公司 | Measurement method for determining a surface profile |
| CN101206456A (en) * | 2006-12-18 | 2008-06-25 | 占礼葵 | Position measurement time space parameter through switching clock |
Non-Patent Citations (1)
| Title |
|---|
| 王水平: "一种测量环境磁场新方法的探讨", 《电测与仪表》 * |
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