CN102437281A - Superconduction tunnel junction and preparation method thereof - Google Patents
Superconduction tunnel junction and preparation method thereof Download PDFInfo
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- CN102437281A CN102437281A CN2011104043407A CN201110404340A CN102437281A CN 102437281 A CN102437281 A CN 102437281A CN 2011104043407 A CN2011104043407 A CN 2011104043407A CN 201110404340 A CN201110404340 A CN 201110404340A CN 102437281 A CN102437281 A CN 102437281A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 238000013461 design Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 11
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 238000011065 in-situ storage Methods 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 15
- 239000004411 aluminium Substances 0.000 description 14
- 239000003292 glue Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000002096 quantum dot Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 230000005668 Josephson effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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Abstract
The invention discloses a superconduction tunnel junction, which has an asymmetric covered electrode structure. The superconduction tunnel junction comprises an upper electrode, a middle barrier layer and a lower electrode, wherein the area of the upper electrode is larger than that of the lower electrode; the upper electrode covers the lower electrode; and the upper electrode isolates the periphery of a junction region from the outside. By the superconduction tunnel junction and a preparation method thereof, the effective circumference of the junction can be reduced effectively, and the leakage current of the tunnel junction can be reduced; and under the condition of the same junction area, a ratio of the leakage current to the super current is reduced, and the characteristic of the tunnel junction is improved.
Description
Technical field
The present invention relates to superconductive device, relate in particular to a kind of superconducting tunnel junction and preparation method thereof.
Background technology
The Superconducting Josephson tunnel junction is in the middle of two superconductors, to embed a layer insulating, and two superconductors form weak coupling through middle insulating barrier.When barrier layer is enough thin peculiar physical phenomenon will appear, i.e. the Josephson effect.Utilize the specific physical effect of Superconducting Josephson tunnel junction can constitute the superconductive device of various functions, wherein superconductive quantum bit is a wherein typical example.The Superconducting Josephson tunnel junction is the basic composition unit of superconductive quantum bit, and the height of its quality directly determines the quality of superconductive quantum bit performance.Thereby the process of the high-quality Superconducting Josephson tunnel junction of research preparation has important practical significance.
Leakage current is important parameter of performance of reflection Superconducting Josephson tunnel junction; Particularly in the preparation of superconductive quantum bit circuit; Little leakage current and supercurrent ratio; Be the basic demand of superconductive quantum bit circuit, the ratio that usually accounts for supercurrent with leakage current characterizes the leakage current of tunnel junction.General superconductive device all requires enough little of the leakage current of tunnel junction, thereby is necessary very much to study which factor and can influences the tunnel junction leakage current.Technology from the preparation knot; The generation of leakage current has two main sources: at first be in the barrier layer, because the requirement of Josephson effect, barrier layer is all done thinner; Will exist various microdefects etc. to cause pin hole like this, cause the upper/lower electrode minute short circuit to form leakage current; Another is exactly on the periphery edge of interface, forms an interface with medium such as outside air, though there are one deck barrier layer (oxide layer such as Al in the edge, interface
2O
3) insulating barrier that forms, but because extremely thin, airborne oxygen and all kinds of conducting particles can get into oxide layer and cause defective etc., decreasing insulating, thus cause leakage current generating.In the preparation technology of knot, the length that the edge in interface is exposed to (influential to leakage current) in the air is called effective girth of tunnel junction.Obviously the border in interface and extraneous medium have a common boundary, and longer (being that effective girth is long more) leakage current will be big more.Can predict, under the situation of the certain barrier layer mass conservation of junction area, reduce the leakage current that effective girth of tunnel junction can reduce to tie.
We have prepared the Superconducting Josephson tunnel junction of different area, and experiment draws leakage current, and to account for the ratio of ultra stream as shown in Figure 1 with the variation relation of the ratio of junction area with effective girth.
Can see from the experimental result of Fig. 1, the ratio of the ratio that leakage current accounts for supercurrent and effective girth and junction area truly have certain positive relationship, promptly effectively girth is big than more with junction area, the ratio that leakage current accounts for supercurrent is just big more.Thereby under the condition of junction area constant (supercurrent is constant), the contact length that reduces to tie edge and medium obviously can reduce the size of leakage current, and the leakage current ratio that accounts for supercurrent also can reduce simultaneously.
Usually superconducting tunnel junction is structure (the being commonly called as sandwich structure) formation by last superconducting layer (being upper electrode), following superconducting layer (being lower electrode) and middle barrier layer (SIS), often upper/lower electrode size identical (being the symmetry electrode structure).Prepare Al/Al with the oblique evaporation of electron beam, in-situ oxidation
2O
3Example is become in/Al aluminium tunnel, and is as shown in Figure 2, if the interface area is rectangle, in the symmetry electrode structure Design, the knot edge has three limits to be exposed in the air, effective girth of knot be these three edge lengths and, effective length of side of knot is longer, leakage current is bigger.
Summary of the invention
Goal of the invention: in order to overcome the deficiency that exists in the prior art; The present invention provides superconducting tunnel junction of a kind of asymmetric cover type electrode structure and preparation method thereof; Reduce effective girth of knot, reduce the tunnel junction leakage current, under the situation of equal junction area; Leakage current is flowed than being reduced with ultra, improved the characteristic of tunnel junction.
Technical scheme: for realizing above-mentioned purpose, the technical scheme that the present invention adopts is:
A kind of superconducting tunnel junction is a kind of asymmetric cover type electrode structure; Comprise upper electrode, middle barrier layer and lower electrode; The area of said upper electrode is greater than the area of lower electrode, and upper electrode covers lower electrode, and upper electrode is isolated from the outside the interface periphery.
Adopt the superconducting tunnel junction of above-mentioned asymmetric cover type electrode structure; Because lower electrode is covered by upper electrode fully; Make upper electrode play the effect that is isolated from the outside to the interface periphery; Under the situation of constant (there is not variation in the interface area yet) of interface, be exposed to edge, airborne interface (effectively girth) and reduced.
A kind of method for preparing above-mentioned superconducting tunnel junction based on oblique evaporation of unsettled mask and in-situ oxidation method, comprises the steps: specifically
(1) design superconducting tunnel junction mask plate image, the area of design upper electrode is greater than the area of lower electrode, and upper electrode covers lower electrode fully;
(2) based on the unsettled mask structure of superconducting tunnel junction mask plate preparation of images that designs;
(3) get superconducting tunnel junction based on unsettled mask structure through oblique evaporation of electron beam and in-situ oxidation legal system.
Beneficial effect: superconducting tunnel junction provided by the invention and preparation method thereof, can effectively reduce effective girth of knot, reduce the tunnel junction leakage current, under the situation of equal junction area, make leakage current and ultra stream than being reduced the characteristic of raising tunnel junction.
Description of drawings
Fig. 1 accounts for the ratio and the variation relation figure of effective girth with the ratio of junction area of ultra stream for leakage current;
Fig. 2 is for adopting effective girth sign picture of tying in the symmetry electrode structural design;
Fig. 3 is for adopting effective girth sign picture of tying in the asymmetric cover type electrode structural designs;
Fig. 4 is the particular flow sheet of the preparation of unsettled mask structure;
Fig. 5 is the optical photograph of unsettled mask structure;
Fig. 6 is the tiltedly flow chart of evaporation of electron beam;
Fig. 7 is an aluminium tunnel junction optical photograph;
Fig. 8 (a), Fig. 8 (b) are the I-V curve of aluminium tunnel junction under 292mK of asymmetric electrode structure.
Embodiment
Below in conjunction with accompanying drawing the present invention is done explanation further.
A kind of superconducting tunnel junction is a kind of asymmetric cover type electrode structure; Comprise upper electrode, middle barrier layer and lower electrode; The area of said upper electrode is greater than the area of lower electrode, and upper electrode covers lower electrode, and upper electrode is isolated from the outside the interface periphery.
Preparing above-mentioned superconducting tunnel junction can comprise the steps: based on oblique evaporation of unsettled mask and in-situ oxidation method
(1) design superconducting tunnel junction mask plate image, the area of design upper electrode is greater than the area of lower electrode, and upper electrode covers lower electrode fully;
(2) based on the unsettled mask structure of superconducting tunnel junction mask plate preparation of images that designs;
(3) get superconducting tunnel junction based on unsettled mask structure through oblique evaporation of electron beam and in-situ oxidation legal system.
With the identical Al/Al in interface among method for preparing interface and Fig. 2
2O
3/ Al aluminium tunnel junction, the asymmetric cover type electrode structure of processing is as shown in Figure 3, because upper electrode is slightly larger than lower electrode, makes the crossover region oxide layer covered fully by the upper strata aluminum film electrode.Effective girth of knot is the length on a surplus limit only, and other three limits are all covered by upper strata aluminium film, and like this with respect to the symmetry electrode structure that adopts among Fig. 2, effectively girth has reduced greatly.
Below the above-mentioned asymmetric cover type electrode structure aluminium Al/Al of just concrete preparation
2O
3The process of/Al tunnel junction is described.Superconducting tunnel junction mask plate graphical design
In design superconducting tunnel junction mask plate figure, interface area size be an important parameter, the asymmetric cover type electrode of the present invention, exactly in design with the area of upper electrode greater than the area of lower electrode and cover lower electrode simultaneously fully.Size, the shape of concrete electrode can be selected adjustment as required.Example: if the rectangle knot, its area is by interface width and length decision.And the length of knot is tiltedly being evaporated among the preparation method, and the length that is made up of crossover region the evaporation angle determines that the area of knot is only determined by the width of mask plate electrode like this.Concrete size can be lower electrode width 2um in the design of this routine electrode mask plate, upper electrode width 3um, and upper and lower layer electrode have more 0.5um on the every limit of Width symmetry.
Unsettled mask structure preparation
The idiographic flow of the preparation of unsettled mask structure is as shown in Figure 4, specifically comprises the steps:
(1) at first on the Si substrate, get rid of one deck photoresist, with this layer photoetching glue as photostable supporting layer: this layer photoetching glue is LOR10B in this example, and thickness is about 1.5um, get rid of LOR10B after, immediately at 150 ℃ of following drying glue 5min;
(2) get rid of one deck photoresist again as imaging layer: this layer photoetching glue is electron beam adhesive 495PMMA C8 (hereinafter to be referred as PMMA) in this example, and thickness is about 1um, get rid of PMMA after, immediately at 90 ℃ of following drying glue 10min;
(3) with the tunnel junction size that designs to photoresist make public (can use electron beam exposure according to design size, also can be the photolithography plate that designs and produces);
(4) development adopts two kinds of different developer solutions to carry out twice development, selects corresponding developer solution according to different Exposure modes: the electron beam developer solution (MIBK: IPA is 1: 3) of developing process employing for the first time in this example, remove the PMMA that made public in the upper strata; The second development process adopts developer for positive photoresist, removes the bottom LOR10B photoresist under the exposure figure, and the dissolution time through control lower floor glue forms unsettled mask structure as shown in Figure 5.Electron beam tiltedly evaporates
The idiographic flow that electron beam tiltedly evaporates is as shown in Figure 6, specifically comprises the steps:
(1) vacuum chamber is evacuated to 5 * 10
-4More than the Pa;
(2) clean unsettled mask structure surface with the Ar ion beam;
(3) with certain angle of inclination A evaporation ground floor aluminium film (being lower electrode), the aluminium film thickness is about 100nm in this example;
(4) oxygen of feeding certain pressure intensity (
is like 25Pa in this example); Ventilation certain hour (
is as about 5min in this example) forms layer of oxide layer as barrier layer (oxidation pressure and time need be optimized as requested) at the ground floor aluminium film surface;
(5) evaporate second layer aluminium film (being upper electrode) from the another one direction with certain angle of inclination B, in this example: the aluminium film thickness is about 120nm, requires second layer aluminium film than ground floor aluminium thickness, makes aluminium tunnel junction as shown in Figure 7.
Adopt the Al/Al of method for preparing
2O
3The effective girth of/Al tunnel junction obviously reduces, and under 292mK low temperature, experiment records leakage current and the ultra ratio that flows, and can be low to moderate 0.6%, and leakage current characteristic has reached satisfied effect; Shown in Fig. 8 (a) and Fig. 8 (b), under 292mK low temperature, the supercurrent I that leaping voltage is corresponding
cBe 0.4uA, leakage current 2.5nA, leakage current is merely 0.6% with the ratio of ultra stream, and leakage current characteristic has reached comparatively satisfied effect.
Thereby the superconducting tunnel junction of this asymmetric cover type electrode structure can be widely used in the Superconducting Josephson tunnel junction and become the preparation of various superconductive devices on basis with the Superconducting Josephson tunnel.
The above only is a preferred implementation of the present invention; Be noted that for those skilled in the art; Under the prerequisite that does not break away from the principle of the invention, can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (2)
1. a superconducting tunnel junction comprises upper electrode, middle barrier layer and lower electrode, it is characterized in that: the area of said upper electrode is greater than the area of lower electrode, and upper electrode covers lower electrode, and upper electrode is isolated from the outside the interface periphery.
2. method for preparing the described superconducting tunnel junction of claim 1, it is characterized in that: said method comprises the steps:
(1) design superconducting tunnel junction mask plate image, the area of design upper electrode is greater than the area of lower electrode, and upper electrode covers lower electrode fully;
(2) based on the unsettled mask structure of superconducting tunnel junction mask plate preparation of images that designs;
(3) get superconducting tunnel junction based on unsettled mask structure through oblique evaporation of electron beam and in-situ oxidation legal system.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104701451A (en) * | 2015-03-20 | 2015-06-10 | 清华大学 | Preparation process of superconductive Josephson junction covered by edge of in-situ three-layer film |
| CN107579112A (en) * | 2017-08-09 | 2018-01-12 | 北京梦之墨科技有限公司 | A kind of full liquid quantum tunneling effect device and preparation method thereof |
| CN108110131A (en) * | 2017-12-18 | 2018-06-01 | 合肥本源量子计算科技有限责任公司 | A kind of preparation method of Josephson junction |
| WO2018224876A1 (en) * | 2017-06-07 | 2018-12-13 | International Business Machines Corporation | Shadow mask sidewall tunnel junction for quantum computing |
| CN109840596A (en) * | 2018-11-19 | 2019-06-04 | 中国科学技术大学 | Expansible superconductive quantum bit structure |
| CN111994867A (en) * | 2020-08-02 | 2020-11-27 | 南京大学 | Method for preparing large-area controllable nano channel based on suspended mask and growing film method |
| CN114072915A (en) * | 2019-02-15 | 2022-02-18 | 微软技术许可有限责任公司 | Fabrication method using oblique deposition and shadow walls |
| CN115802873A (en) * | 2022-10-24 | 2023-03-14 | 中国人民解放军战略支援部队信息工程大学 | ALD Josephson junction preparation method based on metal mask etching |
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| EP0287383B1 (en) * | 1987-04-15 | 1993-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Superconducting ceramic film and a method of manufacturing the same |
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Patent Citations (2)
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|---|---|---|---|---|
| EP0287383B1 (en) * | 1987-04-15 | 1993-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Superconducting ceramic film and a method of manufacturing the same |
| CN1488174A (en) * | 2001-08-22 | 2004-04-07 | ���ŷ��˹��ʳ��絼��ҵ�����о����� | Lamp edge type josephson junction element and its manufacturing method |
Non-Patent Citations (1)
| Title |
|---|
| 沈丹丹等: "超导量子比特中铝超导隧道结的性能", 《科学通报》, vol. 56, no. 34, 5 December 2011 (2011-12-05), pages 2923 - 2927 * |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104701451A (en) * | 2015-03-20 | 2015-06-10 | 清华大学 | Preparation process of superconductive Josephson junction covered by edge of in-situ three-layer film |
| CN104701451B (en) * | 2015-03-20 | 2017-03-29 | 清华大学 | A kind of trilamellar membrane edges cover Josephson junction preparation technology in situ |
| US10707401B2 (en) | 2017-06-07 | 2020-07-07 | International Business Machines Corporation | Shadow mask sidewall tunnel junction for quantum computing |
| US10790433B2 (en) | 2017-06-07 | 2020-09-29 | International Business Machines Corporation | Shadow mask sidewall tunnel junction for quantum computing |
| WO2018224876A1 (en) * | 2017-06-07 | 2018-12-13 | International Business Machines Corporation | Shadow mask sidewall tunnel junction for quantum computing |
| JP7083444B2 (en) | 2017-06-07 | 2022-06-13 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Methods for Forming Side Side Tunnel Junctions and Tunnel Junction Devices |
| US10361354B2 (en) | 2017-06-07 | 2019-07-23 | International Business Machines Corporation | Shadow mask sidewall tunnel junction for quantum computing |
| GB2577432A (en) * | 2017-06-07 | 2020-03-25 | Ibm | Shadow mask sidewall tunnel junction for quantum computing |
| US11069849B2 (en) | 2017-06-07 | 2021-07-20 | International Business Machines Corporation | Shadow mask sidewall tunnel junction for quantum computing |
| JP2020522886A (en) * | 2017-06-07 | 2020-07-30 | インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ | Method for forming a sidewall tunnel junction and tunnel junction device |
| GB2577432B (en) * | 2017-06-07 | 2020-09-16 | Ibm | Shadow mask sidewall tunnel junction for quantum computing |
| CN107579112A (en) * | 2017-08-09 | 2018-01-12 | 北京梦之墨科技有限公司 | A kind of full liquid quantum tunneling effect device and preparation method thereof |
| CN108110131A (en) * | 2017-12-18 | 2018-06-01 | 合肥本源量子计算科技有限责任公司 | A kind of preparation method of Josephson junction |
| CN108110131B (en) * | 2017-12-18 | 2021-04-06 | 合肥本源量子计算科技有限责任公司 | Preparation method of superconducting Josephson junction |
| CN109840596A (en) * | 2018-11-19 | 2019-06-04 | 中国科学技术大学 | Expansible superconductive quantum bit structure |
| CN109840596B (en) * | 2018-11-19 | 2022-09-09 | 中国科学技术大学 | Scalable superconducting qubit structure |
| CN114072915A (en) * | 2019-02-15 | 2022-02-18 | 微软技术许可有限责任公司 | Fabrication method using oblique deposition and shadow walls |
| CN111994867A (en) * | 2020-08-02 | 2020-11-27 | 南京大学 | Method for preparing large-area controllable nano channel based on suspended mask and growing film method |
| CN115802873A (en) * | 2022-10-24 | 2023-03-14 | 中国人民解放军战略支援部队信息工程大学 | ALD Josephson junction preparation method based on metal mask etching |
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Application publication date: 20120502 |