CN206225365U - A kind of OLED display panel - Google Patents
A kind of OLED display panel Download PDFInfo
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- CN206225365U CN206225365U CN201621392223.8U CN201621392223U CN206225365U CN 206225365 U CN206225365 U CN 206225365U CN 201621392223 U CN201621392223 U CN 201621392223U CN 206225365 U CN206225365 U CN 206225365U
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- pixel defining
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- defining layer
- opening
- insulating medium
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Abstract
The utility model embodiment provides a kind of OLED display panel, is related to display technology field, during can reducing preparation OLED display panel, harmful effect of the metal mask plate to luminescence unit.The OLED display panel, including substrate, setting pixel defining layer over the substrate, also including being arranged on insulating medium layer of the pixel defining layer away from the substrate side；The opening of the insulating medium layer is Chong Die in the orthographic projection of the substrate with the opening of the pixel defining layer, and the opening of the pixel defining layer edge beyond the insulating medium layer opening edge.
Description
Technical field
The utility model is related to display technology field, more particularly to a kind of OLED display panel.
Background technology
Organic electroluminescent LED (Organic Light Emitting Diode, abbreviation OLED) is a kind of organic thin
Film electroluminescent device, it has the advantages that preparation process is simple, low cost, easily formation flexible structure, visual angle are wide, therefore, profit
A kind of important Display Technique is turned into the Display Technique of OLED.
In the prior art, as depicted in figs. 1 and 2, the preparation of OLED display panel, generally first passes through structure over the substrate 10
Figure technique formed anode 101 and pixel defining layer 20, the metal mask plate 30 that will be patterned into afterwards be formed with anode 101 and picture
The substrate contraposition laminating of plain definition layer 20, makes the perforate of metal mask plate 30 corresponding with the opening 201 of pixel defining layer, Ran Houzheng
Plating organic material produces steam, and the perforate that steam passes through metal mask is deposited on substrate and forms organic material function layer 102.
Evaporation forms negative electrode 103 afterwards.
Wherein, shadow effect is produced to avoid deposition material excessive, during evaporation, metal mask plate is with substrate not
Can have big gap, as shown in Figure 1, it is common practice to which magnet 40 is set, allow metal mask plate 30 mask strips because of magnetic force
Attract and fit in the pixel defining layer 20 of substrate.
But, on the one hand, due to covering for the mask strips edge of metal mask plate 30, especially large scale metal mask plate 30
Mould bar edge easily forming corrugations, can be because unbalance stress forms extruding when the metal mask plate 30 of deformation is fitted with substrates into intimate
Pixel defining layer 20, causes the edge of opening of pixel defining layer 20 to collapse, thus it is bad to be easily caused luminescence unit appearance；It is another
Aspect, because substrate and metal mask plate 30 can occur relative displacement and friction in transmit process, therefore, easily to luminous single
First edge causes scratch, causes luminescence unit stain blackspot occur；Another further aspect, metal mask plate 30 in use its open
Bore edges may condense particulate matter, and these particulate matters are easily right in metal mask plate 30 with substrate separation process
Luminescence unit causes to weigh wounded.
Utility model content
Embodiment of the present utility model provides a kind of OLED display panel, during can reducing preparation OLED display panel,
Harmful effect of the metal mask plate to luminescence unit.
To reach above-mentioned purpose, embodiment of the present utility model is adopted the following technical scheme that：
On the one hand, there is provided a kind of OLED display panel, including substrate, pixel defining layer over the substrate is set, also
Including being arranged on insulating medium layer of the pixel defining layer away from the substrate side；The opening of the insulating medium layer and institute
The opening for stating pixel defining layer overlaps in the orthographic projection of the substrate, and the edge of the opening of the pixel defining layer exceeds described
The edge of the opening of insulating medium layer.
Preferably, the thickness of the insulating medium layer is 1~5 μm.
Preferably, the OLED display panel also includes being arranged on the pixel defining layer away from the substrate side, and
Near the raised structures of the opening of the pixel defining layer；The raised structures are set around the opening of the pixel defining layer,
And the height of the raised structures is less than the height of the insulating medium layer.
It is further preferred that the material of the pixel defining layer, the insulating medium layer and the raised structures not phase
Together；Or, at least both material phase in the pixel defining layer, the insulating medium layer and the raised structures three
Together.
Based on above-mentioned, it is preferred that the OLED display panel also includes thin film transistor (TFT) and luminescence unit；The luminous list
Unit includes anode, organic material functional layer and negative electrode, and the anode is electrically connected with the drain electrode of the thin film transistor (TFT)；The film
Transistor is arranged between the pixel defining layer and the substrate；The anode is arranged on the pixel defining layer with the lining
Between bottom, and anode described in the opening exposed portion of the pixel defining layer；The organic material functional layer is arranged on the picture
In the opening of plain definition layer；The negative electrode is arranged in the opening of the pixel defining layer.
On the other hand, there is provided a kind of preparation method of OLED display panel, including：Pixel defining layer is formed on substrate,
Also include：In the pixel defining layer insulating medium layer is formed away from the side of the substrate；The opening of the insulating medium layer
Opening with the pixel defining layer is Chong Die in the orthographic projection of the substrate, and the edge of the opening of the pixel defining layer exceeds
The edge of the opening of the insulating medium layer.
Preferably, the preparation method also includes：In the pixel defining layer away from the substrate side, and near described
The opening of pixel defining layer forms raised structures；The raised structures are set around the opening of the pixel defining layer, and described
Height of the height of raised structures less than the insulating medium layer.
It is further alternative, the pixel defining layer, the insulating medium layer and the raised structures are formed, including：Profit
The first mask plate is used, and uses a photoetching process, form the pixel defining layer；In the pixel defining layer, using
Two mask plates, and a photoetching process is used, form the insulating medium layer；Using the 3rd mask plate, and use a photoetching
Technique, forms the raised structures.
Or, optionally, the pixel defining layer, the insulating medium layer and the raised structures are formed, including：Utilize
First mask plate, and a photoetching process is used, form the pixel defining layer；In the pixel defining layer, first is formed
Dielectric film, using the first gray-tone mask plate (GTM), and uses a photoetching process, forms the insulating medium layer and described prominent
Play structure.
Or, optionally, the pixel defining layer, the insulating medium layer and the raised structures are formed, including：Formed
Second dielectric film, using the second gray-tone mask plate (GTM), and uses a photoetching process, forms the pixel defining layer and institute
State raised structures；In the pixel defining layer, using the second mask plate, and a photoetching process is used, form the insulation
Dielectric layer.
Or, optionally, the pixel defining layer, the insulating medium layer and the raised structures are formed, including：Formed
3rd dielectric film, using the 3rd gray-tone mask plate (GTM), and uses a photoetching process, forms the pixel defining layer and absolutely
Edge dielectric layer；In the pixel defining layer, using the 3rd mask plate, and a photoetching process is used, form the projection knot
Structure.
Or, optionally, the pixel defining layer, the insulating medium layer and the raised structures are formed, including：Formed
4th dielectric film, using the 4th gray-tone mask plate (GTM), and uses a photoetching process, forms the pixel defining layer, institute
State insulating medium layer and the raised structures.
Based on above-mentioned, it is preferred that the preparation method also includes forming thin film transistor (TFT) and luminescence unit；The luminous list
Unit includes anode, organic material functional layer and negative electrode, and the anode is electrically connected with the drain electrode of the thin film transistor (TFT)；The film
Transistor is formed between the pixel defining layer and the substrate；The anode is formed in the pixel defining layer with the lining
Between bottom, and anode described in the opening exposed portion of the pixel defining layer；The organic material functional layer is formed in the picture
Formed in the opening of plain definition layer and after the insulating medium layer；The negative electrode is opened at least formed at the pixel defining layer
It is intraoral.
Embodiment of the present utility model provides a kind of OLED display panel, is set away from substrate side by pixel defining layer
Insulating medium layer is put, and makes the edge of the opening of pixel defining layer beyond the edge of the opening of insulating medium layer, can be follow-up
When evaporation forms organic material function layer and such as negative electrode of the electrode above organic material functional layer, make metal mask plate
Fitted with insulating medium layer, and the verge of opening of metal mask plate is in vacant state, without being opened with pixel defining layer
There is directly contact in mouth edge, thus, even if metal mask plate occurs forming corrugations, or during transmission there is phase in metal mask plate
To displacement, the probability that be collapsed or scratch luminescence unit edge occur can be also significantly reduced, additionally, also greatly reducing metal
The particle that mask plate verge of opening condenses weighs the probability of luminescence unit wounded.
Brief description of the drawings
In order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art, below will be to embodiment
Or the accompanying drawing to be used needed for description of the prior art is briefly described, it should be apparent that, drawings in the following description are only
It is some embodiments of the present utility model, for those of ordinary skill in the art, is not paying the premise of creative work
Under, other accompanying drawings can also be obtained according to these accompanying drawings.
The signal that Fig. 1 fits for a kind of OLED display panel preparation process substrate that prior art is provided with metal mask plate
Figure；
A kind of structural representation of OLED display panel that Fig. 2 is provided for prior art；
A kind of structural representation of OLED display panel that Fig. 3 is provided for the utility model embodiment；
Substrate and metal mask plate in a kind of OLED display panel preparation process that Fig. 4 is provided for the utility model embodiment
The schematic diagram of laminating；
A kind of structural representation of OLED display panel that Fig. 5 is provided for the utility model embodiment；
Substrate and metal mask plate in a kind of OLED display panel preparation process that Fig. 6 is provided for the utility model embodiment
The schematic diagram of laminating；
A kind of structural representation of OLED display panel that Fig. 7 is provided for the utility model embodiment；
A kind of formation insulating medium layer and the process of raised structures that Fig. 8 (a) -8 (d) is provided for the utility model embodiment
Schematic diagram；
A kind of formation pixel defining layer and the process of raised structures that Fig. 9 (a) -9 (d) is provided for the utility model embodiment
Schematic diagram；
Figure 10 (a) -10 (e) for the utility model embodiment provide it is a kind of formed pixel defining layer, insulating medium layer and
The process schematic of raised structures.
Reference：
10- substrates；101- anodes；102- organic material functional layers；103- negative electrodes；20- pixel defining layers；201- pixels are determined
The opening of adopted layer；30- metal mask plates；40- magnet；50- insulating medium layers；51- the first dielectric films；52- second is exhausted
Edge dielectric film；The dielectric films of 53- the 4th；The opening of 501- insulating medium layers；60- raised structures；70- film crystals
Pipe；80- photoresists；801- photoresists are fully retained part；The member-retaining portion of 802- photoresists half；The photoresists of 803- first half retain
Part；The member-retaining portion of the second photoresists of 804- half；The gray-tone mask plate (GTM)s of 90- first；The gray-tone mask plate (GTM)s of 91- second；The GTGs of 92- the 4th
Mask plate.
Specific embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the utility model, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment for being obtained, belongs to the scope of the utility model protection.
The utility model embodiment provides a kind of OLED display panel, as shown in figure 3, including substrate 10, being arranged on substrate
Pixel defining layer 20 on 10, also including being arranged on insulating medium layer 50 of the pixel defining layer 20 away from the side of substrate 10；Insulation
The opening 501 of dielectric layer is Chong Die in the orthographic projection of substrate 10 with the opening 201 of pixel defining layer, and pixel defining layer opening
Edge of 201 edge beyond the opening 501 of insulating medium layer.
It should be noted that first, it will be recognized by those skilled in the art that the OLED display panel also includes being arranged on
Anode 101, organic material functional layer 102 and negative electrode 103 at the opening 201 of pixel defining layer.
Wherein, in the region of opening 201 of pixel defining layer anode 101, organic material functional layer 102 and the moon
Pole 103 constitutes luminescence unit.
Additionally, be only located at the opening 201 of pixel defining layer with negative electrode 103 in Fig. 3 illustrated, but the utility model reality
Apply example and be not limited to this, negative electrode 103 can tile one layer and set.And, the utility model embodiment is not limited to anode 101 and sets
Put between negative electrode 103 and substrate 10, or negative electrode 103 is arranged between anode 101 and substrate 10.
Second, because the problem that the utility model embodiment is solved is led for metal mask plate is fitted with pixel defining layer 20
A series of problems of cause, therefore, the content that those skilled in the art combine the utility model embodiment should be understood that in formation picture
After plain definition layer 20, as shown in figure 4, insulating medium layer 50 should be initially formed, organic material work(is just formed by evaporation process afterwards
Ergosphere 102 and the electrode such as negative electrode 103 being positioned above.Wherein, when carrying out evaporation process, by metal mask plate 30 and insulation
Dielectric layer 50 is fitted.
3rd, can be organic material, or inorganic material for the material of insulating medium layer 50.Wherein, insulate
The material of dielectric layer 50 can be identical with the material of pixel defining layer 20, also can be different.
For the thickness of insulating medium layer 50, should avoid producing shadow effect in follow-up evaporation process.
4th, the edge of the opening 201 of pixel defining layer is beyond the edge of the opening 501 of insulating medium layer, as, insulation
Opening 201 size of the size of opening 501 of dielectric layer more than pixel defining layer.
Because the size of opening 201 of pixel defining layer is fixed, thus can be by rationally setting opening for insulating medium layer
Mouthfuls 501 size is not contacted with pixel defining layer 20 ensureing metal mask plate 30.
The utility model embodiment provides a kind of OLED display panel, by pixel defining layer 20 away from the side of substrate 10
Insulating medium layer 50 is set, and makes the edge of the opening 201 of pixel defining layer beyond the edge of the opening 501 of insulating medium layer,
In follow-up evaporation can form organic material function layer 102 and electrode positioned at the top of organic material functional layer 102 is for example cloudy
During pole 103, metal mask plate 30 is fitted with insulating medium layer 50, and the verge of opening of metal mask plate 30 is in vacantly
, there is directly contact without the edge of opening 201 with pixel defining layer in state, thus, even if there is gauffer in metal mask plate 30
Deformation, or during transmission there is relative displacement in metal mask plate 30, can also be significantly reduced generation be collapsed or scratch luminescence unit
The probability at edge, additionally, the particle for also greatly reducing the condensation of the verge of opening of metal mask plate 30 weighs the several of luminescence unit wounded
Rate.
Preferably, the thickness of insulating medium layer 50 is 1~5 μm.So, can avoid producing shade in follow-up evaporation process
Effect.
Preferably, as shown in figure 5, the OLED display panel also includes being arranged on pixel defining layer 20 away from substrate 10 1
Side, and near the raised structures 60 of the opening 201 of pixel defining layer；Raised structures 60 set around the opening 201 of pixel defining layer
Put, and raised structures 60 height less than insulating medium layer 50 height.
It should be noted that the height to raised structures 60 is not defined, as long as remove metal mask plate deforming upon
When sagging, do not contacted with raised structures 60.
Additionally, after insulating medium layer 50 is formed, being initially formed raised structures 60, then carry out evaporation process formation organic material
Electrode of the functional layer 102 to be positioned above.
On the one hand, raised structures 60 can rise when the mask strips edge of metal mask plate 30 occurs sagging due to deformation
To supporting role, so as to further avoid metal mask plate 30 that directly contact occurs with the edge of opening 201 of pixel defining layer.Separately
On the one hand, because metal mask plate 30 is in prolonged processing procedure, the mask strips of metal mask plate 30 easily assemble foreign matter, work as gold
When the top (shown in Fig. 6) that category mask plate 30 is located at insulating medium layer 50 carries out evaporation process, foreign matter easily drops, and projection knot
Structure 60 can stop that the foreign matter for dropping is moved to luminescence unit, thus can avoid causing the harmful effect to luminescence unit.
Optionally, the material of pixel defining layer 20, insulating medium layer 50 and raised structures 60 is differed.Or, pixel
Definition layer 20, insulating medium layer 50 are identical with least both material in the three of raised structures 60.
Wherein, the material of pixel defining layer 20 can be organic material, for example can be using polyimides, phenolic resin etc.
Material.
The material of insulating medium layer 50 can be organic material, or inorganic material.When the material of insulating medium layer 50
Expect during for organic material, can be using materials such as polyimides, phenolic resin.When the material of insulating medium layer 50 is inorganic material
When, alundum (Al2O3) (Al can be used2O3), zinc oxide (ZnO), titanium dioxide (TiO2) etc. inorganic material.
The material of raised structures 60 can be organic material, or inorganic material.When the material of raised structures 60 is
During organic material, can be using materials such as polyimides, phenolic resin.When the material of raised structures 60 is inorganic material, can adopt
Use Al2O3、ZnO、TiO2Etc. inorganic material.
In the utility model embodiment, the material of the either material of insulating medium layer 50, or raised structures 60,
It is made of conventional material, thus being significantly increased for cost will not be caused.
Based on above-mentioned, as shown in fig. 7, the OLED display panel also includes thin film transistor (TFT) 70 and luminescence unit；It is described
Luminescence unit includes anode 101, organic material functional layer 102 and negative electrode 103, and anode 101 is electric with the drain electrode of thin film transistor (TFT) 70
Connection；Thin film transistor (TFT) 70 is arranged between pixel defining layer 20 and substrate 10.
Anode 101 is arranged between pixel defining layer 20 and substrate 10, and the exposed portion of opening 201 of pixel defining layer is positive
Pole 101；Organic material functional layer 102 is arranged in the opening 201 of pixel defining layer；Negative electrode 103 is arranged at pixel definition
In the opening 201 of layer.
Wherein, thin film transistor (TFT) 70 includes grid, gate insulation layer, semiconductor active layer, source electrode and drain electrode.Fig. 7 is only the bottom of with
Illustrated as a example by gate type thin film transistor 70.
For organic material functional layer 102, it can at least include luminescent layer, on this basis in order to improve electronics
With the efficiency that luminescent layer is injected in hole, the organic material functional layer 102 further can also be including electron transfer layer, hole biography
Defeated layer and the electron injecting layer being arranged between negative electrode 103 and electron transfer layer, and it is arranged on hole transmission layer and anode 101
Between hole injection layer.
The material of anode 101 can be transparent conductive material；Transparent conductive material and opaque conduction material can also be included
Material, is now sandwich construction, for example, transparency conducting layer/opaque conductive layer/transparency conducting layer.
The material of negative electrode 103 can be opaque conductive material, depending on its thickness can be according to light emission direction, work as thinner thickness
When, negative electrode 103 is translucent, and when thickness is thicker, negative electrode 103 is in opaque.
The utility model embodiment drives luminescence unit by thin film transistor (TFT), can be applied to the OLED display panel
Large scale high-definition display device, range of application is wider.
The utility model embodiment also provides a kind of preparation method of OLED display panel, as shown in figure 3, including：In lining
Pixel defining layer 20 is formed on bottom 10, is also included：In pixel defining layer 20 insulating medium layer 50 is formed away from the side of substrate 10；
The opening 501 of insulating medium layer is Chong Die in the orthographic projection of substrate 10 with the opening 201 of pixel defining layer, and pixel defining layer is opened
Edge of the edge of mouth 201 beyond the opening 501 of insulating medium layer.
With reference to shown in Fig. 3, the preparation method also includes forming luminescence unit, and luminescence unit includes being located at pixel defining layer
Opening 201 at anode 101, organic material functional layer 102 and negative electrode 103.
Wherein, after pixel defining layer 20 is formed, as shown in figure 4, insulating medium layer 50 should be initially formed, afterwards just by steaming
Depositing process forms organic material function layer 102 and the electrode such as negative electrode 103 being positioned above.When carrying out evaporation process, by gold
Category mask plate 30 is fitted with insulating medium layer 50.
Pixel defining layer 20 and insulating medium layer 50 are preferably formed by photoetching process.Herein photoetching process include exposure,
The techniques such as development, etching.
The utility model embodiment provides a kind of preparation method of OLED display panel, by pixel defining layer 20 away from
The side of substrate 10 forms insulating medium layer 50, and makes the edge of the opening 201 of pixel defining layer beyond the opening of insulating medium layer
501 edge, can form organic material function layer 102 and positioned at the top of organic material functional layer 102 in follow-up evaporation
During electrode such as negative electrode 103, metal mask plate 30 is fitted with insulating medium layer 50, and make the perforate side of metal mask plate 30
Edge is in vacant state, and directly contact occurs without the edge of opening 201 with pixel defining layer, thus, even if metal mask plate
30 there are forming corrugations, or metal mask plate 30 occurs relative displacement during transmission, can also be significantly reduced generation be collapsed or scrape
Hinder the probability at luminescence unit edge, additionally, the particle for also greatly reducing the condensation of the verge of opening of metal mask plate 30 weighs hair wounded
The probability of light unit.
Preferably, the thickness of insulating medium layer 50 is 1~5 μm.So, can avoid producing shade in follow-up evaporation process
Effect.
Preferably, as shown in figure 5, the preparation method also includes：In pixel defining layer 20 away from the side of substrate 10, and lean on
The opening 201 of nearly pixel defining layer forms raised structures 60；Raised structures 60 are set around the opening 201 of pixel defining layer, and
Height of the height of raised structures 60 less than insulating medium layer 50.
Herein, after insulating medium layer 50 is formed, raised structures 60 are next formed into, carry out evaporation process again afterwards and formed
Machine material function 102 electrode to be positioned above of layer.
Pixel defining layer 20, insulating medium layer 50, raised structures 60 are preferably formed by photoetching process.
On the one hand, raised structures 60 can rise when the mask strips edge of metal mask plate 30 occurs sagging due to deformation
To supporting role, so as to further avoid metal mask plate 30 that directly contact occurs with the edge of opening 201 of pixel defining layer.Separately
On the one hand, because metal mask plate 30 is in prolonged processing procedure, the mask strips of metal mask plate 30 easily assemble foreign matter, when
When the top (shown in Fig. 6) that metal mask plate 30 is located at insulating medium layer 50 carries out evaporation process, foreign matter easily drops, and projection
Structure 60 can stop that the foreign matter for dropping is moved to luminescence unit, thus can avoid causing the harmful effect to luminescence unit.
Based on above-mentioned, pixel defining layer 20, insulating medium layer 50 and raised structures 60 can be formed by following several ways：
Mode one
Pixel defining layer 20, insulating medium layer 50 and raised structures 60 are formed to comprise the following steps：
S10, using the first mask plate, and use a photoetching process, form pixel defining layer 20.
The material of pixel defining layer 20 can be organic material, for example can be using materials such as polyimides, phenolic resin.
Specifically, organic insulation film can be formed first on the substrate 10 for being formed with anode 101, and photoresist is formed,
Photoresist is formed after being exposed to photoresist, developed using the first mask plate part and photoresist removal portion completely is fully retained
Point, it is corresponding with pixel defining layer 20 to be formed that photoresist is fully retained part, using etching technics to the organic insulation that exposes
Film is performed etching, and forms pixel defining layer 20.
S11, in pixel defining layer 20, using the second mask plate, and use a photoetching process, form insulating medium layer
50。
Wherein, the material of insulating medium layer 50 can be organic material, or inorganic material.When insulating medium layer 50
Material when being organic material, can be using the material such as polyimides, phenolic resin.When the material of insulating medium layer 50 is inorganic material
During material, Al can be used2O3、ZnO、TiO2Etc. inorganic material.
Specifically, organic or inorganic insulation dielectric film is formed on the substrate 10 for being formed with pixel defining layer 20, and shape
Photoresist being formed into photoresist, after being exposed to photoresist, developed using the second mask plate, part and photoresist is fully retained
Remove part completely, it is corresponding with insulating medium layer 50 to be formed that photoresist is fully retained part, using etching technics to exposing
Organic or inorganic dielectric film perform etching, formed insulating medium layer 50.
S12, in pixel defining layer 20, using the 3rd mask plate, and use a photoetching process, form raised structures
60。
Wherein, the material of raised structures 60 can be organic material, or inorganic material.When the material of raised structures 60
Expect during for organic material, can be using materials such as polyimides, phenolic resin.When the material of raised structures 60 is inorganic material,
Al can be used2O3、ZnO、TiO2Etc. inorganic material.
Specifically, forming organic or inorganic insulation on the substrate 10 for being formed with pixel defining layer 20 and insulating medium layer 50
Dielectric film, and photoresist is formed, photoresist is formed after being exposed to photoresist, developed using the 3rd mask plate and is fully retained
Part and photoresist remove part completely, and it is corresponding with raised structures 60 to be formed that photoresist is fully retained part, using etching
Technique is performed etching to the organic or inorganic dielectric film for exposing, and forms raised structures 60.
Mode two
Pixel defining layer 20, insulating medium layer 50 and raised structures 60 are formed to comprise the following steps：
S20, using the first mask plate, and use a photoetching process, form pixel defining layer 20.
Herein, specific embodiment is identical with above-mentioned S10, will not be repeated here.
S21, in pixel defining layer 20, formed the first dielectric film, using the first gray-tone mask plate (GTM), and use one
Secondary photoetching process, forms insulating medium layer 50 and raised structures 60.
Specifically, as shown in Fig. 8 (a), the first dielectric is formed on the substrate 10 for being formed with pixel defining layer 20 thin
Film 51, and photoresist 80 is formed, photoresist 80 is exposed using the first gray-tone mask plate (GTM) 90, is developed, form such as Fig. 8 (b)
Shown photoresist is fully retained part 801, the member-retaining portion 802, photoresist of photoresist half and removes part completely；Photoresist is complete
Member-retaining portion 801 is corresponding with insulating medium layer 50 to be formed, the member-retaining portion 802 of photoresist half and raised structures 60 to be formed
Correspondence, it is corresponding with other parts that photoresist removes part completely.
The the first dielectric film 51 for exposing is performed etching using etching technics, forms the knot as shown in Fig. 8 (c)
Structure.As shown in Fig. 8 (d), the member-retaining portion 802 of photoresist half is removed using cineration technics, and the first dielectric to exposing is thin
Film 51 is performed etching, and forms insulating medium layer 50 and raised structures 60.Finally, photoresist is fully retained into part 801 to remove.
Wherein, the material of the first dielectric film 51 can be organic material, or inorganic material.
Certainly, when the material of the first dielectric film 51 is organic photosensitive material, then photoresist 80 is not necessarily formed, directly
Connect and be exposed using 90 pairs of the first dielectric films 51 of the first gray-tone mask plate (GTM), and development can form insulating medium layer 50
With raised structures 60.
Mode three
Pixel defining layer 20, insulating medium layer 50 and raised structures 60 are formed to comprise the following steps：
S30, the second dielectric film of formation, using the second gray-tone mask plate (GTM), and use a photoetching process, form picture
Plain definition layer 20 and raised structures 60.
Specifically：As shown in Fig. 9 (a), the second dielectric film 52 is formed over the substrate 10, and form photoresist 80,
Photoresist is exposed using the second gray-tone mask plate (GTM) 91, is developed, formed the photoresist as shown in Fig. 9 (b) and portion is fully retained
The 801, member-retaining portion 802, photoresist of photoresist half is divided to remove part completely；Photoresist be fully retained part 801 with it is to be formed
The correspondence of raised structures 60, the member-retaining portion 802 of photoresist half is corresponding with pixel defining layer 20 to be formed, photoresist removal portion completely
Divide corresponding with other parts.
The the second dielectric film 52 for exposing is performed etching using etching technics, forms the knot as shown in Fig. 9 (c)
Structure.As shown in Fig. 9 (d), the member-retaining portion 802 of photoresist half is removed using cineration technics, and the second dielectric to exposing is thin
Film 52 is performed etching, and forms pixel defining layer 20 and raised structures 60.Finally, photoresist is fully retained into part 801 to remove.
Wherein, the material of the second dielectric film 52 can be organic material.
Certainly, when the material of the second dielectric film 52 is organic photosensitive material, then photoresist 80 is not necessarily formed, directly
Connect and be exposed using 91 pairs of the second dielectric films 52 of the second gray-tone mask plate (GTM), and development can form pixel defining layer 20
With raised structures 60.
S31, in pixel defining layer 20, using the second mask plate, and use a photoetching process, form insulating medium layer
50。
Herein, specific embodiment is identical with above-mentioned S11, will not be repeated here.
Mode four
Pixel defining layer 20, insulating medium layer 50 and raised structures 60 are formed to comprise the following steps：
S40, the 3rd dielectric film of formation, using the 3rd gray-tone mask plate (GTM), and use a photoetching process, form picture
Plain definition layer 20 and insulating medium layer 50.
Herein, concrete technology is similar with above-mentioned S30, will not be repeated here.
S41, in pixel defining layer 20, using the 3rd mask plate, and use a photoetching process, form raised structures
60。
Herein, specific embodiment is identical with above-mentioned S12, will not be repeated here.
Mode five
Forming pixel defining layer 20, insulating medium layer 50 and raised structures 60 includes：The 4th dielectric film is formed, profit
With the 4th gray-tone mask plate (GTM), and photoetching process of use, pixel defining layer 20, insulating medium layer 50 and raised structures are formed
60。
Specifically, as shown in Figure 10 (a), the 4th dielectric film 53 is formed over the substrate 10, and photoresist 80 is formed,
Photoresist is exposed using the 4th gray-tone mask plate (GTM) 92, is developed, formed the photoresist as shown in Figure 10 (b) and portion is fully retained
The member-retaining portion 803 of the 801, first photoresist half, the member-retaining portion 804, photoresist of the second photoresist half is divided to remove part completely；Its
In, the thickness of the thickness more than the member-retaining portion 804 of the second photoresist half of the member-retaining portion 803 of the first photoresist half；Photoresist is complete
Member-retaining portion 801 is corresponding with insulating medium layer 50 to be formed, the member-retaining portion 803 of the first photoresist half and projection knot to be formed
The correspondence of structure 60, the region between the correspondence insulating medium layer 50 of half member-retaining portion of the second photoresist 804 and raised structures 60, photoresist
Removal part completely is corresponding with other parts.
The 4th dielectric film 53 for exposing is performed etching using etching technics, forms the knot as shown in Figure 10 (c)
Structure.As shown in Figure 10 (d), the member-retaining portion 804 of the second photoresist half, and the 4th insulation Jie to exposing are removed using cineration technics
Matter film 53 is performed etching, and forms pixel defining layer 20 and insulating medium layer 50；Afterwards, as shown in Figure 10 (e), using grey chemical industry
Skill removes the member-retaining portion 803 of the first photoresist half, and the 4th dielectric film 53 to exposing is performed etching, and forms projection knot
Structure 60；Finally, photoresist is fully retained into part 801 to remove.
Certainly, when the material of the 4th dielectric film 53 is organic photosensitive material, then photoresist 80 is not necessarily formed, directly
Connect and be exposed using 92 pairs of the 4th dielectric films 53 of the 4th gray-tone mask plate (GTM), and development can form pixel defining layer
20th, insulating medium layer 50 and raised structures 60.
Based on above-mentioned, as shown in fig. 7, the preparation method also includes forming thin film transistor (TFT) 70 and luminescence unit；It is described
Luminescence unit includes anode 101, organic material functional layer 102 and negative electrode 103, and anode 101 is electric with the drain electrode of thin film transistor (TFT) 70
Connection；Thin film transistor (TFT) 70 is formed between pixel defining layer 20 and substrate 10.
Anode 101 is formed between pixel defining layer 20 and substrate 10, and the exposed portion of opening 201 of pixel defining layer is positive
Pole 101；Organic material functional layer 102 is formed in the opening 201 of pixel defining layer and is formed after insulating medium layer 50；Negative electrode
103 at least formed in the opening 201 of pixel defining layer.
The utility model embodiment drives luminescence unit by thin film transistor (TFT), can be applied to the OLED display panel
Large scale high-definition display device, range of application is wider.
The above, specific embodiment only of the present utility model, but protection domain of the present utility model do not limit to
In this, any one skilled in the art can readily occur in change in the technical scope that the utility model is disclosed
Or replace, should all cover within protection domain of the present utility model.Therefore, protection domain of the present utility model should be with the power
The protection domain that profit is required is defined.
Claims (5)
1. a kind of OLED display panel, including substrate, setting pixel defining layer over the substrate, it is characterised in that also wrap
Include the insulating medium layer for being arranged on the pixel defining layer away from the substrate side；
The opening of the insulating medium layer is Chong Die in the orthographic projection of the substrate with the opening of the pixel defining layer, and the picture
Edge of the edge of the opening of plain definition layer beyond the opening of the insulating medium layer.
2. OLED display panel according to claim 1, it is characterised in that the thickness of the insulating medium layer is 1~5 μ
m。
3. OLED display panel according to claim 1, it is characterised in that also remote including being arranged on the pixel defining layer
From the substrate side, and near the raised structures of the opening of the pixel defining layer；
The raised structures are set around the opening of the pixel defining layer, and the height of the raised structures is less than the insulation
The height of dielectric layer.
4. OLED display panel according to claim 3, it is characterised in that the pixel defining layer, the dielectric
The material of layer and the raised structures is differed；Or,
The pixel defining layer, the insulating medium layer are identical with least both material in the raised structures three.
5. the OLED display panel according to claim any one of 1-4, it is characterised in that also including thin film transistor (TFT) and hair
Light unit；The luminescence unit includes anode, organic material functional layer and negative electrode, the leakage of the anode and the thin film transistor (TFT)
Pole electrically connects；
The thin film transistor (TFT) is arranged between the pixel defining layer and the substrate；
The anode is arranged between the pixel defining layer and the substrate, and the pixel defining layer opening exposed portion
The anode；The organic material functional layer is arranged in the opening of the pixel defining layer；The negative electrode is arranged at institute
State in the opening of pixel defining layer.
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| CN201621392223.8U CN206225365U (en) | 2016-12-16 | 2016-12-16 | A kind of OLED display panel |
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| WO2018107722A1 (en) * | 2016-12-16 | 2018-06-21 | Boe Technology Group Co., Ltd. | Organic light emitting diode display substrate, organic light emitting diode display apparatus, and method of fabricating organic light emitting diode display substrate |
| WO2019000519A1 (en) * | 2017-06-28 | 2019-01-03 | 武汉华星光电半导体显示技术有限公司 | Material performance testing device and manufacturing method |
| US10305039B2 (en) | 2017-06-28 | 2019-05-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Material property testing device and manufacturing method for the same |
| CN113383439A (en) * | 2019-07-11 | 2021-09-10 | 深圳市柔宇科技股份有限公司 | OLED display panel and display device |
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2016
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018107722A1 (en) * | 2016-12-16 | 2018-06-21 | Boe Technology Group Co., Ltd. | Organic light emitting diode display substrate, organic light emitting diode display apparatus, and method of fabricating organic light emitting diode display substrate |
| CN108231824A (en) * | 2016-12-16 | 2018-06-29 | 京东方科技集团股份有限公司 | A kind of OLED display panel and preparation method thereof |
| US10741622B2 (en) | 2016-12-16 | 2020-08-11 | Boe Technology Group Co., Ltd. | Method of fabricating organic light emitting diode display substrate using a protruding layer encircling a subpixel region |
| CN108231824B (en) * | 2016-12-16 | 2024-04-23 | 京东方科技集团股份有限公司 | OLED display panel and preparation method thereof |
| WO2019000519A1 (en) * | 2017-06-28 | 2019-01-03 | 武汉华星光电半导体显示技术有限公司 | Material performance testing device and manufacturing method |
| US10305039B2 (en) | 2017-06-28 | 2019-05-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Material property testing device and manufacturing method for the same |
| CN113383439A (en) * | 2019-07-11 | 2021-09-10 | 深圳市柔宇科技股份有限公司 | OLED display panel and display device |
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