CN102437179A - Layout structure of total dose radiation hardening submicron device - Google Patents
Layout structure of total dose radiation hardening submicron device Download PDFInfo
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- CN102437179A CN102437179A CN201110402796XA CN201110402796A CN102437179A CN 102437179 A CN102437179 A CN 102437179A CN 201110402796X A CN201110402796X A CN 201110402796XA CN 201110402796 A CN201110402796 A CN 201110402796A CN 102437179 A CN102437179 A CN 102437179A
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Abstract
The invention provides a layout structure of a total dose radiation hardening submicron device, which comprises an active area, a drain area, an active area of a groove area, a shallow-groove isolation groove on peripheral sides of the active area, a grid area which is arranged on the groove area and adopts a structure that two edges exceed the active area and two nominal shallow-groove isolation grooves. The two nominal shallow-groove isolation grooves are arranged inside the active area at an interval and are vertical to the grid area. Nominal shallow groove isolation oxide is additionally arranged in an original layout structure, so the width of a grid on the edge of a device groove area which extends to an isolation oxide area is reduced, and a creeping distance is prevented from being formed between a source electrode and a drain electrode so as to realize the total dose radiation hardness. The layout structure has simple process, and is suitable for mass production.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of domain structure of anti-integral dose radiation reinforced deep-submicron device.
Background technology
Usually call sub-micron to 0.8～0.35um, 0.25um and the following deep-submicron that is called thereof, 0.05um and the following nanoscale that is called thereof.The key technology of deep-submicron manufacturing mainly comprises ultraviolet photolithographic technology, plasma etching technology, ion implantation technique, copper interconnection technology etc.At present, the main flow production Technology of integrated circuit is 65nm～0.18um in the world, estimates will reach 0.05um in 2012, gets into nanoscale.Film/the base of Deep Sub-Micron VLSI and MEMS and heterogeneous multi-layer membrane structure and inside conductor structure material therefor yardstick are reduced to sub-micron even nanoscale by micron order gradually; Promptly be in the mesoscopic material field between traditional macro and the microcosmic category, its service reliability problem has lasting challenge.The scale effect of material property, surface and interface effect and heterogeneous effect of restraint etc. show especially further, become one of deciding factor that influences its reliability.Therefore, material mesoscopic performance, the correct sign of the performance of particularly being on active service become and are related to the key issue that improves micro element designing and manufacturing level and service reliability and need to be resolved hurrily.
The ionising radiation total dose effect is meant that electronic devices and components or system are under the radiation environment for a long time, forms the phenomenon of oxide trap electric charge and interfacial state electric charge in insulating barrier (mainly being oxide layer) accumulation.This cumulative effect can cause the degeneration of performance of semiconductor device.Specifically, integral dose radiation produces electron hole pair in oxide, and electron mobility is high, will remove very soon; Hole mobility is low, will be trapped in the oxide.The oxide trap positive charge will cause that trench sidewalls exhausts even transoid, thus the leakage path between the leakage of formation source.Performance degradation behind the MOS element total dose radiation mainly shows as the increase of threshold voltage shift and OFF leakage current.The drift of threshold voltage is mainly owing to trapped charge in the gate oxide causes; The increase of OFF leakage current causes mainly due to the isolation oxide trapped charge.Deep-submicron device grid oxygen very thin (several nm), insensitive to total dose irradiation.Total dose irradiation causes that the increase of deep-submicron device OFF leakage current is mainly owing to trapped charge in the shallow trench isolation oxide causes.
The width that grid extend to the isolation oxidation object area has bigger influence to the element total dose radiation effect.Fig. 1 is wide ditch depth submicron component original layout, comprising: have source region 11, drain region 13 and channel region 12 active area, be positioned at side around the said active area shallow trench isolation channels 15, be positioned on the said channel region and the contact zone 16 that adopts dual edge to exceed the grid region 14 of active area structure and be positioned at said grid region one end.Grid extend to isolation oxidation object area with dashed lines frame table and show that this peak width is bigger.
Fig. 2 extends to isolation oxidation object area equipotential lines distribution map for the grid of original width.Shallow trench isolation oxide will form the leakage path between the device source leakage than the electric charge of position, deep deposition.The grid of big width extend to the isolation oxidation object area; The electric field line that the irradiation biasing loads can be distributed to whole shallow trench isolation oxide zone, and as shown in the figure, the width of original layout shallow trench isolation channels is set to 1um in the simulation; The actual electrical field distribution should extend in the isolation oxidation object area at the grid of 1um; Consider the symmetry of Electric Field Distribution, only shown the Electric Field Distribution of half of part, can see; In length is that the grid of 1/2um extend in the isolation oxidation object area, and the electric field line distribution that the irradiation biasing loads reaches the zone of 80% ratio.It is thus clear that it is longer that grid extend to the width of isolation oxidation object area, device OFF leakage current increasing degree is bigger.
Summary of the invention
The shortcoming of prior art in view of the above; The object of the present invention is to provide a kind of domain structure of anti-integral dose radiation reinforced deep-submicron device, be used for solving the prior art grid and extend to the isolation oxide peak width than causing the excessive problem of device OFF leakage current increasing degree greatly.
For realizing above-mentioned purpose and other relevant purposes; The present invention provides a kind of domain structure of anti-integral dose radiation reinforced deep-submicron device, and said domain structure comprises at least: have the source region, the active area of drain region and channel region; Be positioned at the said active area shallow trench isolation channels of side all around; Be covered in the grid region on the said channel region, and said grid region is towards the relative both sides horizontal expansion of this active area and exceed the relative both sides of the edge of this active area, and the illusory shallow trench isolation regions of two longitudinal extensions; Wherein, said two illusory shallow trench isolation regions are formed at respectively in the edge of said active area both sides and are perpendicular with the bearing of trend in said grid region.
In the domain structure of anti-integral dose radiation reinforced deep-submicron device of the present invention, said illusory shallow trench isolation regions is made up of an illusory shallow trench isolation channels or two spaced illusory shallow trench isolation channels at least.The minimum feature that the deep submicron process that the width of said illusory shallow trench isolation channels uses more than or equal to this structure domain of preparation can reach.
Preferably, in 0.35 micron technology, the width of said illusory shallow trench isolation channels is 0.35 μ m～0.5 μ m.In 0.18 micron technology, the width of said illusory shallow trench isolation channels is 0.18 μ m～0.25 μ m.In 0.13 micron technology, the width of said illusory shallow trench isolation channels is 0.13 μ m～0.2 μ m.In 0.11 micron technology, the width of said illusory shallow trench isolation channels is 0.11 μ m～0.18 μ m.
In the domain structure of anti-integral dose radiation reinforced deep-submicron device of the present invention, said domain structure comprises that also version is arranged at the contact zone of said grid region one end.
In the domain structure of anti-integral dose radiation reinforced deep-submicron device of the present invention; Said illusory shallow trench isolation channels is at least two, and in the said illusory shallow trench isolation regions respectively the spacing of this illusory shallow trench isolation channels equal the spacing at the edge of said illusory shallow trench isolation regions and said active area both sides.
As stated; The domain structure of a kind of anti-integral dose radiation reinforced deep-submicron device of the present invention; Have following beneficial effect: this domain structure comprise have the source region, the active area of drain region and channel region, be positioned at side around the said active area shallow trench isolation channels, be positioned on the said channel region and adopt dual edge to exceed grid region and two illusory shallow trench isolation channels of active area structure; Wherein, it is interior and vertical each other with said grid region that said two illusory shallow trench isolation channels are arranged at intervals at said active area.In original domain structure, increased illusory shallow trench isolation oxide, made the grid of device channel area edge extend to the isolation oxide peak width and reduce, the prevention source forms leakage path between leaking, thereby reaches the purpose that resistant to total dose is reinforced.Technology of the present invention is simple, is applicable to large-scale commercial production.
Description of drawings
Fig. 1 is shown as the structural representation of the domain structure of deep-submicron device of the prior art.
The domain structure transistor gate that Fig. 2 is shown as deep-submicron device of the prior art extends to isolation oxide equipotential lines distribution map.
Fig. 3～Fig. 4 is shown as the structural representation of the domain structure of anti-integral dose radiation reinforced deep-submicron device of the present invention.
The domain structure transistor gate that Fig. 5 is shown as anti-integral dose radiation reinforced deep-submicron device of the present invention extends to isolation oxide equipotential lines distribution map.
The element numbers explanation
21 source regions
22 channel regions
23 drain regions
24 grid regions
25 shallow trench isolation channels
26 illusory shallow trench isolation regions
261 illusory shallow trench isolation channels
27 contact zones
Embodiment
Below through specific instantiation execution mode of the present invention is described, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this specification disclosed.The present invention can also implement or use through other different embodiment, and each item details in this specification also can be based on different viewpoints and application, carries out various modifications or change under the spirit of the present invention not deviating from.
See also Fig. 3 to Fig. 5.Need to prove; The diagram that is provided in the present embodiment is only explained basic conception of the present invention in a schematic way; Satisfy only show in graphic with the present invention in relevant assembly but not component count, shape and plotted when implementing according to reality; Kenel, quantity and the ratio of each assembly can be a kind of random change during its actual enforcement, and its assembly layout kenel also maybe be more complicated.
See also Fig. 3～Fig. 4, as shown in the figure, the present invention provides a kind of domain structure 2 of anti-integral dose radiation reinforced deep-submicron device, and said domain structure 2 comprises at least:
Active area has source region 21, and source region 23 and channel region 22, said channel region 22 are separated said source region 21 between said source region 21 and source region 23 with source region 23, and wherein, said source region 21 can exchange with the position in source region 23.
Shallow trench isolation channels 25 is positioned at said active area side all around, is used for the isolation with other device.
Grid region 24; Be covered on the said channel region 22; And said grid region 24 is towards the relative both sides horizontal expansion of this active area and exceed the relative both sides of the edge of this active area; Width that exceeds and said shallow trench isolation channels 25 have certain overlapping region, and wherein, the width of said overlapping region determines according to device preparing process condition and actual demand.
Two illusory shallow trench isolation regions 26, said two illusory shallow trench isolation regions 26 are arranged at respectively in the edge of said active area both sides to longitudinal extension, and perpendicular to the bearing of trend in said grid region 24.Wherein, said two illusory shallow trench isolation regions 26 have a preset spacing with the edge of said active area both sides respectively.A preferred scheme is that said illusory shallow trench isolation regions 26 is made up of an illusory shallow trench isolation channels (Dummy shallow trench isolation oxide) 261 or two spaced illusory shallow trench isolation channels 261 at least.If said illusory shallow trench isolation channels 261 is at least two; In order to increase the evenness of device, in the said illusory shallow trench isolation regions 26 respectively the spacing of this illusory shallow trench isolation channels 261 equal the spacing at said illusory shallow trench isolation regions 26 and the edge of said active area both sides.Certainly, in the different processes processing procedure, the actual numerical value of this spacing needs according to process conditions and actual demand decision.In the present embodiment, since the restriction of international existing process conditions, the minimum feature that the deep submicron process that the width of said illusory shallow trench isolation channels 261 uses more than or equal to this structure domain of preparation can reach.
In an implementation process, said domain structure is implemented in 0.35 micron technology, and the width of said illusory shallow trench isolation channels 261 is 0.35 μ m～0.5 μ m.
In another implementation process, said domain structure is implemented in 0.18 micron technology, and the width of said illusory shallow trench isolation channels 261 is 0.18 μ m～0.25 μ m.
In another implementation process, said domain structure is implemented in 0.13 micron technology, and the width of said illusory shallow trench isolation channels 261 is 0.13 μ m～0.2 μ m.
In another implementation process, said domain structure is implemented in 0.11 micron technology, and the width of said illusory shallow trench isolation channels 261 is 0.11 μ m～0.18 μ m.
Certainly; Domain structure of the present invention is not limited only in the above-mentioned manufacturing process; Suitable equally in the manufacturing process more than 0.5 micron or below 0.11 micron; Its width also is not limited to above-mentioned respectively this number range, and its actual root of number can exceed respectively this number range provided herein within the specific limits according to concrete arts demand.
As a preferred version of present embodiment, said domain structure comprises that also version is arranged at the contact zone of said grid region 24 1 ends, and described contact zone has a plurality of contact holes, in order to the line of grid region 24 electrodes.
Fig. 5 extends to isolation oxidation object area equipotential lines Butut for the transistorized degree grid of domain structure that adopt anti-integral dose radiation reinforced deep-submicron device of the present invention; As shown in the figure; Increase the transistor of illusory shallow trench isolation channels 261,, influenced the equipotential lines distribution that the irradiation biasing loads because illusory shallow trench isolation channels 261 is littler than the width of said shallow trench isolation channels 25; Thereby extend to the isolation oxide region limits to grid in a width smaller; As shown in the figure, be that the grid of 0.5/2um extend in the isolation oxidation object area in length, the electric field line distribution that the irradiation biasing loads is in the zone of said illusory shallow trench isolation regions surface more than 40%.Because the increase of OFF leakage current causes mainly due to the isolation oxide trapped charge, can know, can form leakage path between the leakage of prevention source through the method that increases illusory shallow trench isolation channels 26, thereby reach the purpose that resistant to total dose is reinforced.
In sum; The domain structure of a kind of anti-integral dose radiation reinforced deep-submicron device of invention; Comprise have the source region, the active area of drain region and channel region, be positioned at side around the said active area shallow trench isolation channels, be positioned on the said channel region and adopt dual edge to exceed grid region and two illusory shallow trench isolation channels of active area structure; Wherein, it is interior and vertical each other with said grid region that said two illusory shallow trench isolation channels are arranged at intervals at said active area.In original domain structure, increased illusory shallow trench isolation oxide, made the grid of device channel area edge extend to the isolation oxide peak width and reduce, the prevention source forms leakage path between leaking, thereby reaches the purpose that resistant to total dose is reinforced.Technology of the present invention is simple, is applicable to large-scale commercial production.So the present invention has effectively overcome various shortcoming of the prior art and the tool high industrial utilization.
The foregoing description is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention.Any be familiar with this technological personage all can be under spirit of the present invention and category, the foregoing description is modified or is changed.Therefore, have common knowledge the knowledgeable in the affiliated such as technical field, must contain by claim of the present invention not breaking away from all equivalence modifications of being accomplished under disclosed spirit and the technological thought or changing.
Claims (10)
1. the domain structure of an anti-integral dose radiation reinforced deep-submicron device; It is characterized in that said domain structure comprises at least: have the source region, the active area of drain region and channel region; Be positioned at the said active area shallow trench isolation channels of side all around; Be covered in the grid region on the said channel region, and said grid region is towards the relative both sides horizontal expansion of this active area and exceed the relative both sides of the edge of this active area, and the illusory shallow trench isolation regions of two longitudinal extensions; Wherein, said two illusory shallow trench isolation regions are formed at respectively in the edge of said active area both sides and are perpendicular with the bearing of trend in said grid region.
2. the domain structure of anti-integral dose radiation reinforced deep-submicron device according to claim 1 is characterized in that: said domain structure also comprises the contact zone that is arranged at said grid region one end.
3. the domain structure of anti-integral dose radiation reinforced deep-submicron device according to claim 1 and 2 is characterized in that: said illusory shallow trench isolation regions is made up of an illusory shallow trench isolation channels or two spaced illusory shallow trench isolation channels at least.
4. the domain structure of anti-integral dose radiation reinforced deep-submicron device according to claim 3 is characterized in that: the minimum feature that the deep submicron process that the width of said illusory shallow trench isolation channels uses more than or equal to this structure domain of preparation can reach.
5. the domain structure of anti-integral dose radiation reinforced deep-submicron device according to claim 3 is characterized in that: in 0.35 micron technology, the width of said illusory shallow trench isolation channels is 0.35 μ m～0.5 μ m.
6. the domain structure of anti-integral dose radiation reinforced deep-submicron device according to claim 3 is characterized in that: in 0.18 micron technology, the width of said illusory shallow trench isolation channels is 0.18 μ m～0.25 μ m.
7. the domain structure of anti-integral dose radiation reinforced deep-submicron device according to claim 3 is characterized in that: in 0.13 micron technology, the width of said illusory shallow trench isolation channels is 0.13 μ m～0.2 μ m.
8. the domain structure of anti-integral dose radiation reinforced deep-submicron device according to claim 3 is characterized in that: in 0.11 micron technology, the width of said illusory shallow trench isolation channels is 0.11 μ m～0.18 μ m.
9. the domain structure of anti-integral dose radiation reinforced deep-submicron device according to claim 3 is characterized in that: said two illusory shallow trench isolation regions have a preset spacing with the edge of said active area both sides respectively.
10. the domain structure of anti-integral dose radiation reinforced deep-submicron device according to claim 9; It is characterized in that: said illusory shallow trench isolation channels is at least two, and in the said illusory shallow trench isolation regions respectively the spacing of this illusory shallow trench isolation channels equal the spacing at the edge of said illusory shallow trench isolation regions and said active area both sides.
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| CN102074572A (en) * | 2009-10-28 | 2011-05-25 | 台湾积体电路制造股份有限公司 | Integrated circuit structure |
| CN102130053A (en) * | 2010-12-03 | 2011-07-20 | 华东光电集成器件研究所 | Method for making integrated amplifier of N-channel junction field effect transistor (JFET) |
| CN102254949A (en) * | 2011-08-01 | 2011-11-23 | 上海宏力半导体制造有限公司 | Silicon-on-insulator MOS (metal-oxide-semiconductor) transistor structure |
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2011
- 2011-12-07 CN CN201110402796.XA patent/CN102437179B/en active Active
Patent Citations (7)
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| US6204137B1 (en) * | 2000-04-24 | 2001-03-20 | Chartered Semiconductor Manufacturing, Ltd. | Method to form transistors and local interconnects using a silicon nitride dummy gate technique |
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| CN101000887A (en) * | 2006-01-09 | 2007-07-18 | 国际商业机器公司 | Transistor structure having interconnect to side of diffusion and related method |
| CN101262004A (en) * | 2008-04-11 | 2008-09-10 | 中国科学院上海微系统与信息技术研究所 | Phase change storage unit and method for dual shallow groove separated bipolar transistor selection |
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