CN102437084A - Method for adjusting thickness of oxide film on shallow trench isolation (STI) underlayer - Google Patents
Method for adjusting thickness of oxide film on shallow trench isolation (STI) underlayer Download PDFInfo
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- CN102437084A CN102437084A CN2011102352618A CN201110235261A CN102437084A CN 102437084 A CN102437084 A CN 102437084A CN 2011102352618 A CN2011102352618 A CN 2011102352618A CN 201110235261 A CN201110235261 A CN 201110235261A CN 102437084 A CN102437084 A CN 102437084A
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Abstract
The invention discloses a method for adjusting the thickness of an oxide film on a shallow trench isolation (STI) underlayer. An STI structure is formed on a silicon substrate, and an STI underlayer oxide film is covered on the silicon substrate around the STI structure; a required target value of the thickness of the STI underlayer oxide film is set; when the thickness of the residual film of the STI underlayer oxide film exceeds the target value, a wet process is utilized for treatment to acquire the desired target value; and however, when the thickness of the residual film of the STI underlayer oxide film is lower than the target value, a wet oxygen oxidation technique is utilized for compensation, so that the thickness of the STI underlayer oxide film reaches the required target value. Thus, the fluctuation range of the thickness of the underlayer oxide film is reduced from more than +/-30A to less than 10A, thereby enhancing the stability of the formed semiconductor device and being beneficial to large-scale mass production of high-requirement products.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of method of regulating shallow-trench isolation bed course oxide thickness.
Background technology
Semiconductor development at present presents the diversification direction, and System on Chip/SoC (SoC) is a big main flow wherein.This means has multiple operating voltage on same chip, want the grid oxygen of integrated multiple thickness in this type of designing requirement chip production process.Along with semiconductor fabrication develops to the high-tech node, the isolation technology of device and device also develops into shallow-trench isolation by original silicon carrying out local oxide isolation in the semiconductor integrated circuit.Shallow groove isolation structure is through forming groove on Semiconductor substrate, and the technology of in groove, filling dielectric material forms, and for example, is that the one Chinese patent application file of CN1649122A discloses the manufacturing approach that a kind of shallow trench isolation leaves at publication number.
In order to reduce shallow-trench isolation marginal trough (divot), just must reduce shallow-trench isolation on the technology to gate oxidation wet etching step before as far as possible.Therefore at 0.13 micron below the process node, generally keep shallow-trench isolation bed course oxide-film (pad oxide) injects engineering as follow-up ion sacrificial oxide layer (scarify oxide).
Along with day by day dwindling of device size, the degree of depth of injection also equal proportion reduces, and the bed course oxide thickness that stays changes injecting influence day by day obvious, has increased the susceptibility of device fluctuation.Therefore, residual bed course oxide thickness after needs control shallow-trench isolation module is accomplished.
The relevant factors of instability are that shallow-trench isolation nitride film wet method is peeled off on the technology, generally use hot phosphoric acid, and the soup after fresh soup and the use repeatedly has the etch rate different to oxide-film, and this just causes the unsteadiness of residual bed course oxide thickness.When residual thickness surpasses desired value, utilize through simple wet processing and handle the proper desired value of wanting.But when residual thickness is lower than desired value, just can not get compensation, this also is that present shallow-trench isolation nitride film wet method is peeled off part the most rambunctious.
The present invention proposes a kind of wet oxidation process of using and comes to regulate automatically the method that increases shallow-trench isolation bed course oxide thickness.When residual thickness was lower than desired value, it was long to desired value to utilize wet oxidation process to chase after.The present invention can with bed course oxide thickness fluctuation range from surpass+/-30A narrows down in the 10A, can greatly improve the stability of device, helps the product of scale of mass production high request.
Summary of the invention
On silicon substrate, be formed with fleet plough groove isolation structure (STI); And also be coated with shallow-trench isolation bed course oxide-film on the silicon substrate around the fleet plough groove isolation structure; The present invention provides a kind of method of regulating shallow-trench isolation bed course oxide thickness; To arrive control bed course oxide thickness fluctuation range, can greatly improve the stability of device, help the product of scale of mass production high request.
The present invention provides a kind of method of regulating shallow-trench isolation bed course oxide thickness, comprising:
Set the desired value of required shallow-trench isolation bed course oxide thickness;
When residual thickness is higher than desired value, carry out simple wet processing and handle, described shallow-trench isolation bed course oxide-film is carried out etching, make shallow-trench isolation bed course oxide-film reach needed desired value;
When residual thickness is lower than desired value, utilize wet-oxygen oxidation technology to handle, described shallow-trench isolation bed course oxide-film is increased thickness, make shallow-trench isolation bed course oxide-film reach needed desired value.
Optional, the operating temperature range of said wet-oxygen oxidation technology is 700～850 ℃.
Optional, the hydrogen/oxygen ratio of said wet-oxygen oxidation technology is 1～2.
Compared with prior art; The advantage of technique scheme is: when the residual thickness of shallow-trench isolation bed course oxide-film surpasses desired value; Utilize wet processing to handle and obtain the desired value of wanting; But when the residual thickness of shallow-trench isolation bed course oxide-film is lower than desired value, compensate, make shallow-trench isolation bed course oxide-film reach needed desired value through wet-oxygen oxidation technology.Thereby with bed course oxide thickness fluctuation range from surpass+/-30A narrows down in the 10A.And in wet-oxygen oxidation technology; Oxygen can penetrate surface oxidation silicon layer and inner pasc reaction; Thereby can form consistency of thickness silica preferably, can improve the consistency of thickness that sinks to the bottom oxidation film layer of formation, thereby can improve the stability of semiconductor device of formation.
Description of drawings
With reference to appended accompanying drawing, to describe embodiments of the invention more fully.Yet appended accompanying drawing only is used for explanation and sets forth, and does not constitute limitation of the scope of the invention.
Fig. 1 is a wet etching treatment shallow-trench isolation bed course oxide-film sketch map.
Fig. 2 handles shallow-trench isolation bed course oxide-film sketch map for wet-oxygen oxidation.
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, the method to the adjusting shallow-trench isolation bed course oxide thickness that proposes according to the present invention specifies as follows.
On silicon substrate (1), be formed with fleet plough groove isolation structure (STI) (2), and also be coated with shallow-trench isolation bed course oxide-film on fleet plough groove isolation structure (2) silicon substrate (1) on every side, regulate the thickness of shallow-trench isolation bed course oxide-film:
The desired value of at first setting required shallow-trench isolation bed course oxide thickness is 70A;
When residual thickness is 85～95A, use the HF solution (DHF) of the dilution of 200:1 that described shallow-trench isolation bed course oxide-film is carried out wet etching, the control wet etching is 2 minutes;
When residual thickness is 75～85A, use the HF solution (DHF) of the dilution of 200:1 that described shallow-trench isolation bed course oxide-film is carried out wet etching, the control wet etching is 1 minute;
When residual thickness was 65～75A, bed course oxide thickness fluctuation range need not to handle in 10A;
When residual thickness is 55～65A; Use wet-oxygen oxidation technology that described shallow-trench isolation bed course oxide-film is compensated; The operating temperature of wet-oxygen oxidation technology is 750 ℃, and oxygen flow is 25 liters/minute, and the flow of hydrogen is 27 liters/minute; The processing procedure time set is 6 minutes, and described shallow-trench isolation bed course oxide-film can increase 10A.
When residual thickness is 45～55A; Use wet-oxygen oxidation technology that described shallow-trench isolation bed course oxide-film is compensated; The operating temperature of wet-oxygen oxidation technology is 750 ℃, and oxygen flow is 25 liters/minute, and the flow of hydrogen is 27 liters/minute; The processing procedure time set is 12 minutes, and described shallow-trench isolation bed course oxide-film can increase 20A.
When residual thickness is 35～45A; Use wet-oxygen oxidation technology that described shallow-trench isolation bed course oxide-film is compensated; The operating temperature of wet-oxygen oxidation technology is 750 ℃, and oxygen flow is 25 liters/minute, and the flow of hydrogen is 27 liters/minute; The processing procedure time set is 18 minutes, and described shallow-trench isolation bed course oxide-film can increase 30A.
The present invention can with bed course oxide thickness fluctuation range from surpass+/-30A narrows down in the 10A, can greatly improve the stability of device, helps the product of scale of mass production high request.
Through explanation and accompanying drawing, provided the exemplary embodiments of the ad hoc structure of embodiment.Although foregoing invention has proposed existing preferred embodiment, yet these contents are not as limitation.For a person skilled in the art, read above-mentioned explanation after, various variations and revise undoubtedly will be obvious.Therefore, appending claims should be regarded whole variations and the correction of containing true intention of the present invention and scope as.Any and all scope of equal value and contents all should be thought still to belong in the intent of the present invention and the scope in claims scope.
Claims (6)
1. a method of regulating shallow-trench isolation bed course oxide thickness is formed with fleet plough groove isolation structure (STI) on silicon substrate, and also is coated with shallow-trench isolation bed course oxide-film on the silicon substrate around the fleet plough groove isolation structure, it is characterized in that its step comprises:
1) desired value of the required shallow-trench isolation bed course oxide thickness of setting;
2) when residual thickness is higher than desired value, carry out wet processing and handle, described shallow-trench isolation bed course oxide-film is carried out etching, make shallow-trench isolation bed course oxide-film reach needed desired value;
3) when residual thickness is lower than desired value, utilize wet-oxygen oxidation technology to handle, described shallow-trench isolation bed course oxide-film is increased thickness, make shallow-trench isolation bed course oxide-film reach needed desired value.
2. the method for adjusting shallow-trench isolation bed course oxide thickness as claimed in claim 1 is characterized in that the desired value of the required shallow-trench isolation bed course oxide thickness of setting in the said step (1) is 70 dusts.
3. the method for adjusting shallow-trench isolation bed course oxide thickness as claimed in claim 1 is characterized in that the hydrogen fluoride solution of etching solution for diluting that uses in the wet processing in the said step (2).
4. the method for adjusting shallow-trench isolation bed course oxide thickness as claimed in claim 1 is characterized in that using in the wet processing in the said step (2) hydrogen fluoride solution concentration to be preferably the dilution hydrogen fluoride solution of 200:1.
5. the method for adjusting shallow-trench isolation bed course oxide thickness as claimed in claim 1 is characterized in that the operating temperature range of wet-oxygen oxidation technology in the said step (3) is 700～850 ℃.
6. the method for adjusting shallow-trench isolation bed course oxide thickness as claimed in claim 1 is characterized in that the hydrogen/oxygen ratio of wet-oxygen oxidation technology in the said step (3) is 1～2.
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| CN2011102352618A CN102437084A (en) | 2011-08-17 | 2011-08-17 | Method for adjusting thickness of oxide film on shallow trench isolation (STI) underlayer |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010009809A1 (en) * | 2000-01-21 | 2001-07-26 | Nec Corporation | Method for forming a shallow trench isolation structure in a semiconductor device |
| US6403446B1 (en) * | 1998-07-31 | 2002-06-11 | Hitachi, Ltd. | Method for manufacturing semiconductor device |
| CN101359615A (en) * | 2007-07-30 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor isolation structure and manufacturing method of semiconductor device |
| CN101937840A (en) * | 2010-09-10 | 2011-01-05 | 上海宏力半导体制造有限公司 | Method for forming grid oxide layer |
| CN102136446A (en) * | 2010-01-27 | 2011-07-27 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing silicon wafer with shallow slot isolation structure by wet etching |
-
2011
- 2011-08-17 CN CN2011102352618A patent/CN102437084A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6403446B1 (en) * | 1998-07-31 | 2002-06-11 | Hitachi, Ltd. | Method for manufacturing semiconductor device |
| US20010009809A1 (en) * | 2000-01-21 | 2001-07-26 | Nec Corporation | Method for forming a shallow trench isolation structure in a semiconductor device |
| CN101359615A (en) * | 2007-07-30 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor isolation structure and manufacturing method of semiconductor device |
| CN102136446A (en) * | 2010-01-27 | 2011-07-27 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing silicon wafer with shallow slot isolation structure by wet etching |
| CN101937840A (en) * | 2010-09-10 | 2011-01-05 | 上海宏力半导体制造有限公司 | Method for forming grid oxide layer |
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Application publication date: 20120502 |