CN102437068A - Hole measurement pattern and hole measurement method - Google Patents
Hole measurement pattern and hole measurement method Download PDFInfo
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- CN102437068A CN102437068A CN2011103661746A CN201110366174A CN102437068A CN 102437068 A CN102437068 A CN 102437068A CN 2011103661746 A CN2011103661746 A CN 2011103661746A CN 201110366174 A CN201110366174 A CN 201110366174A CN 102437068 A CN102437068 A CN 102437068A
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Abstract
The invention provides a hole measurement pattern and a hole measurement method. The hole measurement pattern comprises a first part, a second part and a third part, wherein the first part is a repeated pattern area at least comprising three rows and three columns of repeated patterns; the second part is a pattern formed after a T-shaped pattern turns 90 degrees; the third part is a T-shaped pattern; the second part is arranged at the side of the first part; and the third part is arranged at the upper part or lower part of the first part. The pattern and the method have the following beneficial effects: the measurement of the critical dimension of the contact hole and/or through hole layer dense area is improved, and auxiliary measurement patterns are arranged in the contact hole and through hole layer dense pattern areas, thus improving the measurement condition of the critical dimension of the area.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of hole and measure figure and utilize this hole to measure the hole method for measurement that figure carries out the hole measurement.
Background technology
During semiconductor chip is made, behind lithographic definition one deck circuit, need to measure some dimension of picture and come monitoring photoetching technology whether up to standard.Therefore, generally adopt various measurement figures to measure various circuitous patterns, for example lines, groove, hole etc.
Along with the continuous development of integrated circuit technique, critical size is more and more littler, and this has brought high requirement for the auto-measuring of integrated circuit critical size.
For the key stratum of for example contact hole and through hole and so on, because the figure that itself measures is hole (hole), therefore, measure figure with respect to common linearity, the measurement difficulty of the key stratum of contact hole and through hole and so on is just bigger.Measure the hole of large stretch of repetition close quarters if desired, then more difficult; And for contact hole and the such key stratum of through hole, many times we need measure the critical size of a plurality of positions; Therefore, do not have centering true, bring deviation can for the measurement of back measuring point, thereby cause the failure of auto-measuring if the hole of large stretch of close quarters is the position of first measuring point and this first measuring point.So we are badly in need of finding a kind of good method for measurement that measures large stretch of close quarters hole accurately.
Summary of the invention
Technical problem to be solved by this invention is to having above-mentioned defective in the prior art, thus provide a kind of can be by hole measurement figure and the hole method for measurement that auxiliary quantity mapping shape is improved its key dimension measurement situation is set in contact hole and the intensive graphics field of via layer.
According to a first aspect of the invention, provide a kind of hole to measure figure, it comprises: first, second portion and third part; Wherein, said first is the repetitive pattern zone that comprises the repetitive pattern of triplex row three row at least, and said second portion is the figure that a T-shape pattern reversal 90 degree form afterwards, and said third part is a T-shape figure.
Preferably, said second portion is positioned at said first sidepiece, and third part is positioned at said first top or bottom.
Preferably, said second portion and said third part in the horizontal direction and the dimension of picture ratio of the size of vertical direction and actual measurement 1: 1-3: between 1.
Preferably, said second portion and said third part are arranged on the original position that measures position row and row simultaneously.
Preferably, the distance between said second portion and said third part and the said first can not influence the minimum range of main graphic critical size under given photoetching process condition.
According to first aspect present invention; Provide a kind of and improved the hole that contact hole and/or via layer close quarters measure critical size and measure figure, thereby wherein improved its key dimension measurement situation by auxiliary quantity mapping shape being set in contact hole and the intensive graphics field of via layer.Thus, the hole according to first aspect present invention measures the measurement that figure has improved contact hole and/or via layer close quarters critical size; Improved the success rate of scanning electron microscopy auto-measuring.
According to a second aspect of the invention; Provide a kind of utilization to measure figure according to the described hole of first aspect present invention and carried out the hole method for measurement that the hole measures, it comprises: through exposure with develop the contact hole on the photomask and through hole key dimension measurement figure transfer in photoresist film; Utilize the live width scanning electron microscopy, confirm the first measuring point position through the auxiliary pattern of level and vertical direction; And execution contact hole and/or through hole key dimension measurement.
Owing to adopted according to the described hole of first aspect present invention and measured figure; Therefore; It will be appreciated by persons skilled in the art that according to the hole method for measurement of second aspect present invention and can realize that equally hole according to a first aspect of the invention measures the useful technique effect that figure can be realized.Promptly; According to second aspect present invention; Provide a kind of and improved the hole method for measurement that contact hole and/or via layer close quarters measure critical size, thereby wherein improved its key dimension measurement situation by auxiliary quantity mapping shape being set in contact hole and the intensive graphics field of via layer.Thus, improved the measurement of contact hole and/or via layer close quarters critical size according to the hole method for measurement of second aspect present invention; Improved the success rate of scanning electron microscopy auto-measuring.
Description of drawings
In conjunction with accompanying drawing, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and characteristic the present invention through with reference to following detailed, wherein:
The hole that Fig. 1 schematically shows according to the embodiment of the invention measures figure.
Fig. 2 schematically shows the first that measures figure according to the hole of the embodiment of the invention.
Fig. 3 schematically shows the second portion that measures figure according to the hole of the embodiment of the invention.
Fig. 4 schematically shows the third part that measures figure according to the hole of the embodiment of the invention.
Fig. 5 schematically shows according to another embodiment of the present invention, and the hole measures figure.
Need to prove that accompanying drawing is used to explain the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure possibly not be to draw in proportion.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
Embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
The hole that Fig. 1 schematically shows according to the embodiment of the invention measures figure.As shown in Figure 1, measure figure according to the hole of the embodiment of the invention and comprise: the A of first, second portion B and third part C.
Fig. 2 schematically shows the A of first that measures figure according to the hole of the embodiment of the invention.As shown in Figure 2, the A of first is an intensive repetitive pattern zone, and this intensive repetitive pattern zone comprises the height repetitive pattern A1 of triplex row three row at least.
Fig. 3 schematically shows the second portion B that measures figure according to the hole of the embodiment of the invention.Second portion B is that a T-shape turns over the figure that forms after turning 90 degrees counterclockwise.
Fig. 4 schematically shows the third part C that measures figure according to the hole of the embodiment of the invention.Third part C is a T type pattern.
Refer again to Fig. 1, can find out, second portion B and third part C are in 90 degree right angles.
And second portion B is positioned at the top of the A of first, and second portion C is positioned at the left side of the A of first.
Second portion B and third part C can be used as auxiliary quantity mapping shape, and they are arranged on the original position that measures position row and row simultaneously.Specifically, as shown in Figure 1, second portion B and third part C are positioned at the third line and the tertial position as original position of the A of first.
Preferably, as the second portion B of auxiliary quantity mapping shape and third part C in the horizontal direction and the dimension of picture ratio of the size of vertical direction and actual measurement 1: 1-3: between 1.
Further preferably, as the second portion B of auxiliary quantity mapping shape and third part C and as the distance between the A of first of main graphic, under given photoetching process condition, can not influence the minimum range of main graphic critical size.
In method embodiment of the present invention, the method for utilizing the hole measurement figure according to the embodiment of the invention shown in Figure 1 to carry out the hole measurement can comprise the steps:
1) through exposure and development contact hole on the photomask and through hole key dimension measurement figure (A of first, second portion B and third part C) are transferred in the photoresist film.
2) utilize the live width scanning electron microscopy, confirm the first measuring point position through the auxiliary pattern (second portion B and third part C) of level and vertical direction.
3) carry out contact hole and/or through hole key dimension measurement.
Thus, a kind of thereby method embodiment of the present invention provides by the method that auxiliary quantity mapping shape is improved its key dimension measurement situation being set at contact hole and the intensive graphics field of via layer.
Fig. 5 schematically shows according to another embodiment of the present invention, and the hole measures figure.Specifically; Though with second portion B be a T-shape to turn over the figure that forms after turning 90 degrees counterclockwise be that example has explained that the hole according to inventive embodiments measures figure,, in alternative embodiment; Second portion B is that a T-shape turns over the figure that forms after turning 90 degrees clockwise; Like this, second portion B and third part C still are in 90 degree right angles, but at this moment second portion B will be positioned at the right side of the A of first.
Obviously, Fig. 1 and embodiment shown in Figure 5 all show the situation that second portion B is positioned at the top of the A of first, and still, what it will be appreciated by those skilled in the art that is that the mode that second portion B is positioned at the bottom of the A of first also is feasible.
It is understandable that though the present invention with the preferred embodiment disclosure as above, yet the foregoing description is not in order to limit the present invention.For any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (6)
1. a hole measures figure, it is characterized in that comprising: first, second portion and third part; Wherein, said first is the repetitive pattern zone that comprises the repetitive pattern of triplex row three row at least, and said second portion is the figure that a T-shape pattern reversal 90 degree form afterwards, and said third part is a T-shape figure.
2. hole according to claim 1 measures figure, it is characterized in that said second portion is positioned at said first sidepiece, and third part is positioned at said first top or bottom.
3. hole according to claim 1 and 2 measures figure, it is characterized in that, said second portion and said third part in the horizontal direction and the dimension of picture ratio of the size of vertical direction and actual measurement 1: 1-3: between 1.
4. hole according to claim 1 and 2 measures figure, it is characterized in that, said second portion and said third part are arranged on the original position that measures position row and row simultaneously.
5. hole according to claim 1 and 2 measures figure, it is characterized in that the distance between said second portion and said third part and the said first can not influence the minimum range of main graphic critical size under given photoetching process condition.
6. a utilization measures the hole method for measurement that figure carries out the hole measurement according to the described hole of one of claim 1 to 5, it is characterized in that comprising:
Through exposure with develop the contact hole on the photomask and through hole key dimension measurement figure transfer in photoresist film;
Utilize the live width scanning electron microscopy, confirm the first measuring point position through the auxiliary pattern of level and vertical direction; And
Carry out contact hole and/or through hole key dimension measurement.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110366174.6A CN102437068B (en) | 2011-11-17 | 2011-11-17 | Hole measurement pattern and hole measurement method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110366174.6A CN102437068B (en) | 2011-11-17 | 2011-11-17 | Hole measurement pattern and hole measurement method |
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| Publication Number | Publication Date |
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| CN102437068A true CN102437068A (en) | 2012-05-02 |
| CN102437068B CN102437068B (en) | 2014-01-08 |
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| CN201110366174.6A Active CN102437068B (en) | 2011-11-17 | 2011-11-17 | Hole measurement pattern and hole measurement method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102944983A (en) * | 2012-11-28 | 2013-02-27 | 上海华力微电子有限公司 | Method for improving key dimension measurement of pattern to be measured |
| CN104915516A (en) * | 2015-06-29 | 2015-09-16 | 上海华力微电子有限公司 | Isolated hole addressing graphics design and application thereof in measurement |
| CN106783659A (en) * | 2016-12-23 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | The method of graphics test structure and preparation method thereof, measurement pattern size |
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| KR20030002279A (en) * | 2001-06-30 | 2003-01-08 | 주식회사 하이닉스반도체 | A method for forming a test pattern of semiconductor device |
| CN1658071A (en) * | 2003-11-24 | 2005-08-24 | 三星电子株式会社 | Overlay mark for measuring and correcting alignment errors |
| CN101782720A (en) * | 2009-01-21 | 2010-07-21 | 钜晶电子股份有限公司 | Method, control wafer and photomask for measuring and monitoring numerical aperture of exposure machine |
| US20100248089A1 (en) * | 2009-03-27 | 2010-09-30 | Hynix Semiconductor Inc. | Method for optical proximity correction |
| CN102109771A (en) * | 2011-01-27 | 2011-06-29 | 上海宏力半导体制造有限公司 | Method for detecting semiconductor device |
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2011
- 2011-11-17 CN CN201110366174.6A patent/CN102437068B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030002279A (en) * | 2001-06-30 | 2003-01-08 | 주식회사 하이닉스반도체 | A method for forming a test pattern of semiconductor device |
| CN1658071A (en) * | 2003-11-24 | 2005-08-24 | 三星电子株式会社 | Overlay mark for measuring and correcting alignment errors |
| CN101782720A (en) * | 2009-01-21 | 2010-07-21 | 钜晶电子股份有限公司 | Method, control wafer and photomask for measuring and monitoring numerical aperture of exposure machine |
| US20100248089A1 (en) * | 2009-03-27 | 2010-09-30 | Hynix Semiconductor Inc. | Method for optical proximity correction |
| CN102109771A (en) * | 2011-01-27 | 2011-06-29 | 上海宏力半导体制造有限公司 | Method for detecting semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102944983A (en) * | 2012-11-28 | 2013-02-27 | 上海华力微电子有限公司 | Method for improving key dimension measurement of pattern to be measured |
| CN104915516A (en) * | 2015-06-29 | 2015-09-16 | 上海华力微电子有限公司 | Isolated hole addressing graphics design and application thereof in measurement |
| CN104915516B (en) * | 2015-06-29 | 2018-02-27 | 上海华力微电子有限公司 | A kind of application process of mask plate and isolated hole addressing pattern in the measurements |
| CN106783659A (en) * | 2016-12-23 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | The method of graphics test structure and preparation method thereof, measurement pattern size |
| CN106783659B (en) * | 2016-12-23 | 2019-06-28 | 武汉新芯集成电路制造有限公司 | The method of graphics test structure and preparation method thereof, measurement pattern size |
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| CN102437068B (en) | 2014-01-08 |
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