CN102435837A - Online detector for micro electro mechanical system (MEMS) coupling degree-reconfigurable microwave power and preparation method thereof - Google Patents
Online detector for micro electro mechanical system (MEMS) coupling degree-reconfigurable microwave power and preparation method thereof Download PDFInfo
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- CN102435837A CN102435837A CN201110283706XA CN201110283706A CN102435837A CN 102435837 A CN102435837 A CN 102435837A CN 201110283706X A CN201110283706X A CN 201110283706XA CN 201110283706 A CN201110283706 A CN 201110283706A CN 102435837 A CN102435837 A CN 102435837A
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Abstract
The invention relates to an online detector for micro electro mechanical system (MEMS) coupling degree-reconfigurable microwave power, which consists of a microwave power coupler with reconfigurable coupling degree and an indirect heating-type MEMS microwave power detector. Gallium arsenide is taken as a substrate by the structure, and the reconfigurable coupler is controlled to enter low coupling degree, medium coupling degree and high coupling degree of three working states through two pairs of MEMS cantilever beam switch structures to realize reconfigurable online acquisition on microwave signals; the coupling output end of the coupler is connected with a terminal matching resistors to completely absorb the microwave signal power acquired from the main line of the coupler, and the microwave signal power is converted into heat energy, and then, temperature difference is formed near a thermo-electric pile formed by a metal thermocouple arm and a semiconductor thermocouple arm; and a constant potential difference which corresponds to the microwave power is generated on an output pressure welding block by the thermo-electric pile, thereby, online detection on the coupling degree-reconfigurable of microwave power is finished.
Description
Technical field
The present invention proposes micromechanics degree of coupling reconfigurable microwave power at thread detector and preparation method thereof, belong to the technical field of microelectromechanical systems (MEMS).
Background technology
The measurement of microwave signal power is an important problem in radio frequency and the microwave communication system in modern times, though many solutions have been arranged at present, total unavoidable self the various shortcoming of traditional method.And along with the appearance of MEMS technology in recent years, go to replace original technology with new technology, and the more outstanding solution of proposition has become more and more active on this basis.A kind of MEMS thermoelectric (al) type microwave power detector of being processed by the Seebeck effect can absorb microwave signal through terminal resistance, and produces temperature difference, thereby makes that being arranged near the thermopair of terminal resistance produces thermoelectrical potential on the output press welding block.Adopt the reconfigurable microwave power coupling mechanism of the degree of coupling, can carry out online collection to microwave signal, utilize the aforementioned thermoelectricity wave power detecting device that declines on this basis, making becomes possibility based on MEMS technology degree of coupling reconfigurable microwave power at thread detector.
Summary of the invention
Technical matters:The purpose of this invention is to provide a kind of micromechanics degree of coupling reconfigurable microwave power based on MEMS technology at thread detector and preparation method thereof; Through control MEMS cantilever switch; Make the microwave power coupling mechanism that microwave signal is carried out online collection can realize selectable coupling path, thereby realize the reconfigurable degree of coupling; Through this coupling mechanism the power of different proportion is sent into the terminal build-out resistor; Based on the Seebeck effect; With its power transfer that is coupled output is thermoelectrical potential, realizes the on-line measurement of microwave power, thereby has realized the online detecting device of micromechanics degree of coupling reconfigurable microwave power.
Technical scheme:It is substrate that micromechanics degree of coupling reconfigurable microwave power of the present invention is sowed with the arsenicization of band back of the body gold at thread detector, on substrate, is provided with little band signal line, MEMS cantilever switch structure, isolation resistance, indirect heating type microwave power detector and air bridges:
The growth layer of metal is used to realize the common earth construction of microstrip line construction under the gallium arsenide substrate, adopts gold copper-base alloy to constitute.
Little band signal line is used for the Transmission Microwave signal, and this detecting device is made up of this transmission line exactly.It comprises that mainly coupled microstrip line and two in main microstrip line, secondary microstrip line, the by-pass gap are used to the transition microstrip line of realizing being electrically connected.Said main line is used to connect input port and straight-through output port, and said by-pass is used to connect the coupling output port and the isolated port of restructural coupling mechanism.Said restructural coupling mechanism is the part at thread detector of the present invention, and it mainly acts on is the transmission and the distribution of input microwave power.The planar dimension through designing these microstrip lines and the spacing of the microstrip line that is parallel to each other can design the degree of coupling of this restructural coupling mechanism under the different operating state as requested; Whether have or not driving voltage to control cantilever beam structure through the controlling and driving electrode is in DOWN or UP state, makes this coupling mechanism get into corresponding duty.Little band signal line adopts gold copper-base alloy to constitute.
The reconfigurable microwave power coupling mechanism of the described degree of coupling comprises two pairs of MEMS cantilever switch structures; First pair of semi-girder length is shorter relatively; Be called short MEMS semi-girder, its anchor district is on the main line that is made up of microstrip line, and second pair of semi-girder length is longer relatively; Be called long MEMS semi-girder, on its coupled microstrip line of anchor district in the by-pass gap; All there is drive electrode each semi-girder below, is coated with one deck silicon nitride medium layer on the drive electrode, and is connected with press welding block by lead-in wire; When each cantilever switch is under the DOWN attitude, its free end contacts with salient point on the transition transmission line, is used to realize being electrically connected of different microstrip lines; Salient point on the said transition transmission line is positioned at the beam free end below, thereby is used to reduce MEMS semi-girder and the long-pending lossy microwave that reduces of transition microstrip line direct contact surface.Short MEMS semi-girder, long MEMS semi-girder, drive electrode, lead-in wire, press welding block, transition microstrip line and salient point all adopt gold copper-base alloy to constitute.
Air bridges is used for cross-over connection coupled microstrip line and transition microstrip line, is used to form to be electrically connected.Air bridges adopts gold copper-base alloy to constitute.
Isolation resistance is connected to the isolated port place of by-pass, and the other end of isolation resistance connects the common ground under the substrate by through hole, when it is used for absorbing owing to input port impedance mismatching, is coupled to the microwave power of this port by main line.Isolation resistance adopts tantalum-nitride material to constitute.
Two the terminal build-out resistors that are connected in parallel at the coupling output port place of restructural coupling mechanism, the other end of its each build-out resistor all is connected to the common ground of microstrip line through through hole; Be provided with the thermopair of being made up of semiconductor thermocouple arm and metal thermocouple arm near each terminal resistance, these thermopairs formation thermoelectric pile that interconnects each other has the output press welding block at the two ends of its thermoelectric pile.The microwave power that the terminal build-out resistor will transfer to this coupling output port absorbs fully; And generation heat; Formation temperature is poor near thermoelectric pile, and its thermoelectric pile is sensed this temperature difference, based on the Seebeck effect; The output that on the output press welding block, produces thermoelectrical potential, thereby the measurement of realization microwave power.The coupling output port of described restructural coupling mechanism, described terminal build-out resistor and described thermoelectric pile constitute the indirect heating type microwave power detector jointly.Wherein the terminal build-out resistor adopts tantalum-nitride material, and the semiconductor thermocouple arm adopts the GaAs material that mixes, and metal thermocouple arm adopts gold germanium nickel/gold copper-base alloy, and the output press welding block adopts gold copper-base alloy.
Described indirect heating type microwave power detector and described restructural coupling mechanism are common to constitute micromechanics degree of coupling reconfigurable microwave power of the present invention at thread detector.
On physical construction, little band signal line, MEMS cantilever beam structure, drive electrode, air bridges, lead-in wire, press welding block, terminal resistance, thermoelectric pile, isolation resistance are produced on the same gallium arsenide substrate.
Micromechanics degree of coupling reconfigurable microwave power of the present invention can be regarded the two-port network of being degenerated and being formed by one four port network as at thread detector.The reconfigurable microwave power coupling mechanism of the degree of coupling has four ports, and it comprises input port, straight-through output port, coupling output port and isolated port; Connect isolation resistance at the isolated port place, be used for absorbing when input port impedance mismatching, be coupled to the microwave power of isolated port by main line; The coupling output port connects the terminal build-out resistor of indirect heating type microwave power detector as the measuring junction of microwave power; Absorb fully through will the be coupled microwave power at output port place of this build-out resistor; Electromagnetic energy is converted into heat energy; According to the Seebeck effect, produce the output of thermoelectrical potential at the output press welding block of thermoelectric pile.This coupling mechanism is made up of main microstrip line, secondary microstrip line, coupled microstrip line and transition microstrip line; Described main microstrip line is connected input port with straight-through output port, described secondary microstrip line is made up of three microstrip lines that are parallel to each other on the horizontal direction, and the output port that will be coupled is connected with isolated port; In each gap of these three by-passes, all have describedly by isolated coupled microstrip line, its coupled microstrip line all parallels with the major-minor line.From the top down, article one coupled microstrip line strides across by-pass by air bridges and links to each other with the transition microstrip line in the major-minor line outside, and second coupled microstrip line two ends are provided with the anchor district of long MEMS semi-girder, and its free end below is the transition microstrip line of band salient point; And the anchor district of short MEMS semi-girder is on said main line, and it is positioned at main line corner, and its free end below is the transition microstrip line of band salient point; All by the drive electrode control of its below, drive electrode is linked to each other with press welding block by lead-in wire each cantilever switch, covers the silicon nitride medium layer on the drive electrode.When this coupling mechanism works in low degree of coupling state; Drive electrode under the two pairs of MEMS cantilever switch does not all have driving voltage; These two pairs of semi-girders all are in the UP state, this moment each semi-girder free end all not with the transition microstrip line on salient point contact, the microwave signal that is got into by input port can only be coupled through two major-minor lines adjacent to each other; Input microwave power than small scale is coupled on the build-out resistor of terminal; Based on the Seebeck effect, on the output press welding block of thermoelectric pile, will produce and be coupled the corresponding thermoelectrical potential of watt level, thereby the microwave power of realizing first kind of degree of coupling is at thread detector; In this coupling mechanism works in during degree of coupling state; Short that has driving voltage to the drive electrode under the semi-girder; And another is not when having driving voltage to the drive electrode under the semi-girder; This moment, short semi-girder was in the DOWN state and the long cantilever beam is in the UP state, and main line is formed by the coupled microstrip line in short semi-girder, transition microstrip line and air bridges and the by-pass gap and is electrically connected, and the microwave signal that is then got into by input port can intercouple through main line, coupled microstrip line and near the by-pass on their two horizontal directions; These four microstrip lines form interdigital and are coupled in twos; Promptly form the main line coupled zone, the input microwave power of larger proportion is coupled to the terminal build-out resistor through the main line coupled zone, based on the Seebeck effect; On the output press welding block of thermoelectric pile, will produce and be coupled the corresponding thermoelectrical potential of watt level, thereby the microwave power of realizing second kind of degree of coupling is at thread detector; When this coupling mechanism works in high degree of coupling state; On the drive electrode under each MEMS semi-girder driving voltage is arranged all; This moment, its cantilever switch all was in the DOWN state; Main line is connected with two microstrip coupled lines through long and short MEMS cantilever switch, air bridges and transition microstrip line; The microwave signal that input port gets into can intercouple through main line, two coupled microstrip lines and by-pass on three horizontal directions, and these six microstrip lines formation interdigitals are coupled in twos, promptly form the microwave coupled zone that main line coupled zone and by-pass coupled zone concur; More the input microwave power of vast scale is coupled to the terminal build-out resistor through this microwave coupled zone; Based on the Seebeck effect, on the output press welding block of thermoelectric pile, will produce and be coupled the corresponding thermoelectrical potential of watt level, thereby the microwave power of realizing the third degree of coupling is at thread detector.
Micromechanics degree of coupling reconfigurable microwave power in the preparation method of thread detector is:
1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of gallium arsenide is for being 10
18Cm
-3
2) at the N of extension
+Gallium arsenide substrate applies photoresist, keeps preparation and makes ohmic contact regions and the photoresist that begins to take shape the semiconductor thermocouple arm of thermoelectric pile, removes the N of the local extension of photoresist then
+Gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm that begins to take shape, being completed into its doping content is 10
17Cm
-3The semiconductor thermocouple arm of thermoelectric pile;
4) on the substrate that step 3) obtains, apply photoresist, remove the photoresist that does not need bump making process local;
5) etching gallium arsenide substrate is removed photoresist, forms the gallium arsenide substrate of band salient point shape;
6) on the substrate that step 5) obtains, apply photoresist, remove the photoresist that the metal thermocouple arm place of thermoelectric pile is made in preparation;
7) sputter gold germanium nickel/gold on substrate, its thickness are 2700 altogether;
8) peel off the photoresist that stays in the removal step 6), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm of formation thermoelectric pile removed;
9) on the substrate that step 8) obtains, apply photoresist, remove the photoresist that isolation resistance and terminal build-out resistor place are made in preparation;
10) sputter tantalum nitride on substrate, its thickness is 1
μM;
11) photoresist lift off that stays in the step 9) is removed, the tantalum nitride above the related removal photoresist begins to take shape the isolation resistance and the terminal build-out resistor that are made up of tantalum nitride;
12) on gallium arsenide substrate, apply photoresist; Remove preparation and make the main line that constitutes by microstrip line, by-pass, coupled transmission line; The transition microstrip line, the anchor district of MEMS semi-girder, MEMS semi-girder, drive electrode, press welding block, output press welding block, air bridges and lead-in wire;
13) golden through evaporation mode growth one deck on substrate, its thickness is 0.3
μM;
14) photoresist that step 12) is stayed is removed; Relatedly remove the gold above the photoresist, begun to take shape the main line that constitutes by microstrip line, by-pass; Coupled transmission line, the anchor district of MEMS semi-girder, MEMS semi-girder, drive electrode, press welding block, output press welding block, air bridges and lead-in wire;
15) anti-carve tantalum nitride, be completed into isolation resistance and terminal build-out resistor;
16) deposit and photoetching polyimide sacrificial layer: on gallium arsenide substrate, apply 1.6
μThe polyimide sacrificial layer that m is thick requires to fill up pit, and the thickness of polyimide sacrificial layer has determined the height of MEMS semi-girder and air bridges; The photoetching polyimide sacrificial layer, only keep MEMS semi-girder and air bridges the below sacrifice layer;
17) down payment that is used to electroplate through the evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
18) apply photoresist, remove preparation and make the main line that constitutes by microstrip line, by-pass, coupled transmission line, the anchor district of MEMS semi-girder, MEMS semi-girder, drive electrode, press welding block, output press welding block, air bridges and the local photoresist of lead-in wire;
19) electroplate one deck gold, its thickness is 2
μM;
20) photoresist that stays removal step 18);
21) anti-carve titanium/gold/titanium, the corrosion down payment forms the main line that is made up of microstrip line, by-pass, coupled transmission line, the anchor district of MEMS semi-girder, MEMS semi-girder, drive electrode, press welding block, output press welding block, air bridges and lead-in wire;
22) with this gallium arsenide substrate thinning back side to 100
μM;
23) the substrate back dry etching is made through hole;
24) at this gallium arsenide substrate back side evaporation one deck gold;
25) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under MEMS semi-girder and the air bridges, and deionized water soaks slightly, the absolute ethyl alcohol dehydration, and normal temperature volatilization is down dried.
Beneficial effect:Micromechanics degree of coupling reconfigurable microwave power of the present invention is at thread detector; The advantage that not only has traditional microwave power detector; Like low loss, high isolation and good directivity; Can also utilize the MEMS cantilever beam structure to realize the reconfigurable microwave power coupling mechanism of the degree of coupling, and connect the indirect thermoelectricity wave power detecting device that declines, thereby realize that the reconfigurable microwave power of the micromechanics degree of coupling is at thread detector at the coupling output terminal of this coupling mechanism.
Description of drawings
Fig. 1 is the synoptic diagram of micromechanics degree of coupling reconfigurable microwave power at thread detector;
Fig. 2 is the partial top view of this micromechanics degree of coupling reconfigurable microwave power at thread detector;
Fig. 3 is that this micromechanics degree of coupling reconfigurable microwave power is at the A-A of thread detector sectional view;
Comprise among the figure: input port 1, straight-through port 2, coupling port 3, isolated port 4, the main line of forming by little band signal line 5; By-pass 6, coupling line 7 and 8, transition microstrip line 9, the main line coupled zone of forming by main line 5, coupled microstrip line 7 and two microstrip lines that belong to by-pass 10, the by-pass coupled zone of forming by two microstrip lines of by-pass and coupling line 8 11; Salient point 12, short MEMS semi-girder 13, short MEMS semi-girder anchor district 14, drive electrode 15, silicon nitride medium layer 16; Lead-in wire 17, press welding block 18, air bridges 19, long MEMS semi-girder 20, long MEMS semi-girder anchor district 21; Isolation resistance 22, terminal build-out resistor 23, metal thermocouple arm 24, semiconductor thermocouple arm 25, output press welding block 26; Through hole 27, gallium arsenide substrate 28, microstrip line is ground altogether, and promptly back of the body gold 29.
Specific embodiments
The specific embodiments of the directed microwave power coupling mechanism of microelectronic mechanical cantilever beam formula of this paper invention is following:
On gallium arsenide substrate 28, be provided with little band signal line 5,6,7,8; 9, lack MEMS semi-girder anchor district 14, drive electrode 15, lead-in wire 17, press welding block 18; Air bridges 19, long MEMS semi-girder 20, isolation resistance 22, terminal build-out resistor 23; Metal thermocouple arm 24, semiconductor thermocouple arm 25, output press welding block 26, through hole 27:
Little band signal line is used for the Transmission Microwave signal, and this detecting device is made up of this transmission line exactly.It comprises that mainly coupled microstrip line 7 and 8 and two in main microstrip line 5, secondary microstrip line 6, the by-pass gap are used to the transition microstrip line of realizing being electrically connected 9.Said main line 5 is used to connect input port 1 and straight-through output port 2, and said by-pass 5 is used to connect the coupling output port 3 and isolated port 4 of restructural coupling mechanism.Said restructural coupling mechanism is the part at thread detector of the present invention, and it mainly acts on is the transmission and the distribution of input microwave power.The planar dimension through designing these microstrip lines and the spacing of the microstrip line that is parallel to each other can design the degree of coupling of this restructural coupling mechanism under the different operating state as requested; Whether have or not driving voltage to control cantilever beam structure 13 and 20 through controlling and driving electrode 15 is in DOWN or UP state, makes this coupling mechanism get into corresponding duty.Little band signal line adopts gold copper-base alloy to constitute.
The reconfigurable microwave power coupling mechanism of the described degree of coupling comprises two pairs of MEMS cantilever switch structures; First pair of semi-girder length is shorter relatively; Be called short MEMS semi-girder 13, its anchor district 14 is on the main line that is made up of microstrip line 5, and second pair of semi-girder length is longer relatively; Be called long MEMS semi-girder 20, on the coupled microstrip line 8 of its anchor district 21 in by-pass 6 gaps; All there is drive electrode 15 each semi-girder below, is coated with one deck silicon nitride medium layer 16 on the drive electrode 15, and is connected with press welding block 18 by lead-in wire 17; When each cantilever switch is under the DOWN attitude, its free end contacts with salient point 12 on the transition transmission line 9, is used to realize being electrically connected of different microstrip lines; Salient point 12 on the said transition transmission line 9 is positioned at beam free end below, thus be used to reduce MEMS semi-girder 13 with 20 and transition microstrip line 9 direct contact surfaces amass and reduce lossy microwave.Weak point MEMS semi-girder 13, long MEMS semi-girder 20, drive electrode 15, lead-in wire 17, press welding block 18, transition microstrip line 9 and salient point 12 all adopt gold copper-base alloy to constitute.
Two the terminal build-out resistors 23 that are connected in parallel at coupling output port 3 places of restructural coupling mechanism, the other end of its each build-out resistor all is connected to the common ground 29 of microstrip line through through hole 27; Be provided with the thermopair of being made up of semiconductor thermocouple arm 25 and metal thermocouple arm 24 near each terminal resistance 23, these thermopairs formation thermoelectric pile that interconnects each other has the press welding block 26 of output at the two ends of its thermoelectric pile.The microwave power that terminal build-out resistor 23 will transfer to this coupling output port 3 absorbs fully; And generation heat; Formation temperature is poor near thermoelectric pile, and its thermoelectric pile is sensed this temperature difference, based on the Seebeck effect; The output that on output press welding block 26, produces thermoelectrical potential, thereby the measurement of realization microwave power.The coupling output port 3 of described restructural coupling mechanism, described terminal build-out resistor 23 constitutes the indirect heating type microwave power detector jointly with described thermoelectric pile.Wherein terminal build-out resistor 23 adopts tantalum-nitride material, and semiconductor thermocouple arm 25 adopts the GaAs material that mixes, and metal thermocouple arm 24 adopts gold germanium nickel/gold copper-base alloy, and output press welding block 26 adopts gold copper-base alloy.
Described indirect heating type microwave power detector and described restructural coupling mechanism are common to constitute micromechanics degree of coupling reconfigurable microwave power of the present invention at thread detector.
On physical construction, little band signal line 5-9, MEMS cantilever beam structure 13 and 20, drive electrode 15, air bridges 19, lead-in wire 17, press welding block 18, terminal resistance 23, thermoelectric pile, isolation resistance 22 are produced on the same gallium arsenide substrate 28.
Micromechanics degree of coupling reconfigurable microwave power of the present invention can be regarded the two-port network of being degenerated and being formed by one four port network as at thread detector.The reconfigurable microwave power coupling mechanism of the degree of coupling has four ports, and it comprises input port 1, straight-through output port 2, coupling output port 3 and isolated port 4; Connect isolation resistance 22 at isolated port 4 places, be used for absorbing when input port 1 impedance mismatching, be coupled to the microwave power of isolated port 4 by main line 5; Coupling output port 3 connects the terminal build-out resistor 23 of indirect heating type microwave power detector as the measuring junction of microwave power; Absorb fully through will the be coupled microwave power at output port 3 places of this build-out resistor 23; Electromagnetic energy is converted into heat energy; According to the Seebeck effect, the output that produces thermoelectrical potentials at the output press welding block of thermoelectric pile 26.This coupling mechanism by main microstrip line 5, secondary microstrip line 6, coupled microstrip line 7 and 8 and transition microstrip line 9 form; Described main microstrip line 5 is connected input port 1 with straight-through output port 2, described secondary microstrip line 6 is made up of three microstrip lines that are parallel to each other on the horizontal direction, and the output port 3 that will be coupled is connected with isolated port 4; In each gap of these three by-passes, all have describedly by isolated coupled microstrip line 7 and 8, its coupled microstrip line all parallels with major-minor line 5 and 6.From the top down, article one coupled microstrip line 7 strides across by-pass 6 by air bridges 19 and links to each other with the transition microstrip line 9 in the major-minor line outside, and second coupled microstrip line 8 two ends are provided with the anchor district 21 of long MEMS semi-girder, and its free end below is the transition microstrip line 9 of band salient point 12; And the anchor district 14 of short MEMS semi-girder 13 is on said main line 5, and it is positioned at main line 5 corners, and its free end below is the transition microstrip line 9 of band salient point 12; Each cantilever switch is all by drive electrode 15 control of its below, and drive electrode 15 links to each other covering silicon nitride medium layer on the drive electrode 15 by lead-in wire 17 with press welding block 18.When this coupling mechanism works in low degree of coupling state; Drive electrode 15 under the two pairs of MEMS cantilever switch does not all have driving voltage; These two pairs of semi-girders all are in the UP state, this moment each semi-girder free end all not with transition microstrip line 9 on salient point 12 contact, the microwave signal that is got into by input port 1 can only be coupled through two major-minor lines adjacent to each other; Input microwave power than small scale is coupled on the terminal build-out resistor 23; Based on the Seebeck effect, on the output press welding block 26 of thermoelectric pile, will produce and be coupled the corresponding thermoelectrical potential of watt level, thereby the microwave power of realizing first kind of degree of coupling is at thread detector; In this coupling mechanism works in during degree of coupling state; Short that has driving voltage to the drive electrode under the semi-girder 13 15; And another are during to the 15 no driving voltages of the drive electrode under the semi-girder 20; This moment, short semi-girder 13 was in the DOWN state and long cantilever beam 20 is in the UP state, and main line 5 is formed by short semi-girder 13, transition microstrip line 9 and air bridges 19 and coupled microstrip line 7 in by-pass 6 gaps and is electrically connected, and the microwave signal that is then got into by input port 1 can and intercouple near the by-pass 6 on their two horizontal directions through main line 5, coupled microstrip line 7; These four microstrip lines form interdigital and are coupled in twos; Promptly form main line coupled zone 10, the input microwave power of larger proportion is coupled to terminal build-out resistor 23 through main line coupled zone 10, based on the Seebeck effect; On the output press welding block 26 of thermoelectric pile, will produce and be coupled the corresponding thermoelectrical potential of watt level, thereby the microwave power of realizing second kind of degree of coupling is at thread detector; When this coupling mechanism works in high degree of coupling state; On the drive electrode 15 under each MEMS semi-girder driving voltage is arranged all; This moment, its cantilever switch all was in the DOWN state; Main line 5 is connected with 8 with two microstrip coupled lines 7 through long and short MEMS cantilever switch 13 and 20, air bridges 19 and transition microstrip line 9; The microwave signal that input port 1 gets into can intercouple through the by-pass 6 on main line 5, two coupled microstrip lines 7 and 8 and three horizontal directions, and these six microstrip lines form interdigitals and are coupled in twos, promptly form the microwave coupled zone that main line coupled zone 10 and by-pass coupled zone 11 concur; More the input microwave power of vast scale is coupled to terminal build-out resistor 23 through this microwave coupled zone; Based on the Seebeck effect, on the output press welding block 26 of thermoelectric pile, will produce and be coupled the corresponding thermoelectrical potential of watt level, thereby the microwave power of realizing the third degree of coupling is at thread detector.
Micromechanics degree of coupling reconfigurable microwave power in the preparation method of thread detector is:
1) prepares gallium arsenide substrate 28: select the semi-insulating GaAs substrate 28 of extension for use, wherein extension N
+The doping content of gallium arsenide is for being 10
18Cm
-3
2) at the N of extension
+ Gallium arsenide substrate 28 applies photoresist, keeps preparation and makes ohmic contact regions and the photoresist that begins to take shape the semiconductor thermocouple arm 25 of thermoelectric pile, removes the N of the local extension of photoresist then
+Gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm 25 that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm 25 that begins to take shape, being completed into its doping content is 10
17Cm
-3The semiconductor thermocouple arm 25 of thermoelectric pile;
4) on the substrate 28 that step 3) obtains, apply photoresist, remove the photoresist that does not need bump making process 12 places;
5) the etching gallium arsenide substrate 28, remove photoresist, form the gallium arsenide substrate 28 of band salient point 12 shapes;
6) on the substrate 28 that step 5) obtains, apply photoresist, remove the photoresist that metal thermocouple arm 24 places of thermoelectric pile are made in preparation;
7) sputter gold germanium nickel/gold on substrate 28, its thickness are 2700 altogether;
8) peel off the photoresist that stays in the removal step 6), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm 24 of formation thermoelectric pile removed;
9) on the substrate 28 that step 8) obtains, apply photoresist, remove the photoresist that isolation resistance 22 and terminal build-out resistor 26 places are made in preparation;
10) sputter tantalum nitride on substrate 28, its thickness is 1
μM;
11) photoresist lift off that stays in the step 9) is removed, the tantalum nitride above the related removal photoresist begins to take shape the isolation resistance 22 and terminal build-out resistor 23 that are made up of tantalum nitride;
12) on gallium arsenide substrate 28, apply photoresist; Remove preparation and make the main line 5 that constitutes by microstrip line; By-pass 6; Coupled transmission line 7 and 8, transition microstrip line 9, the anchor district 14 and 21 of MEMS semi-girder 13 and 20, MEMS semi-girder, drive electrode 15, press welding block 18, output press welding block 26, air bridges 19 and go between 17;
13) golden through evaporation mode growth one deck on substrate 28, its thickness is 0.3
μM;
14) photoresist that step 12) is stayed is removed; Relatedly removed the gold above the photoresist; Begin to take shape the main line 5 that constitutes by microstrip line, by-pass 6, coupled transmission line 7 and 8; Transition microstrip line 9, the anchor district 14 and 21 of MEMS semi-girder 13 and 20, MEMS semi-girder, drive electrode 15, press welding block 18, output press welding block 26, air bridges 19 and go between 17;
15) anti-carve tantalum nitride, be completed into isolation resistance 22 and terminal build-out resistor 23;
16) deposit and photoetching polyimide sacrificial layer: on gallium arsenide substrate 28, apply 1.6
μThe polyimide sacrificial layer that m is thick requires to fill up pit, and the thickness of polyimide sacrificial layer has determined the MEMS semi-girder with 13 and 20 and the height of air bridges 19; The photoetching polyimide sacrificial layer, only keep MEMS semi-girder 13 and 20 with the sacrifice layer of air bridges 19 belows;
17) down payment that is used to electroplate through the evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
18) apply photoresist; Remove preparation and make the main line 5 that constitutes by microstrip line; By-pass 6; Coupled transmission line 7 and 8, transition microstrip line 9, the photoresist in the anchor district 14 and 21 of MEMS semi-girder 13 and 20, MEMS semi-girder, drive electrode 15, press welding block 18, output press welding block 26, air bridges 19 and 17 places that go between;
19) electroplate one deck gold, its thickness is 2
μM;
20) photoresist that stays removal step 18);
21) anti-carve titanium/gold/titanium; The corrosion down payment; The main line 5 that formation is made up of microstrip line, by-pass 6, coupled transmission line 7 and 8; Transition microstrip line 9, the anchor district 14 and 21 of MEMS semi-girder 13 and 20, MEMS semi-girder, drive electrode 15, press welding block 18, output press welding block 26, air bridges 19 and go between 17;
22) with these gallium arsenide substrate 28 thinning back sides to 100
μM;
23) the substrate back dry etching is made through hole 27;
24) at this gallium arsenide substrate 28 back sides evaporation one deck gold;
25) discharge polyimide sacrificial layer: developer solution soaks, remove MEMS semi-girder 13 with 20 with air bridges 19 under polyimide sacrificial layer, deionized water soaks slightly, the absolute ethyl alcohol dehydration, normal temperature volatilizees down, dries.
Distinguish whether to be the standard of this structure following:
Micromechanics degree of coupling reconfigurable microwave power of the present invention is made up of a reconfigurable coupling mechanism of the degree of coupling and an indirect heating type microwave power detector of isolating the termination isolation resistance at thread detector.The reconfigurable coupling mechanism of the degree of coupling is controlled under the corresponding cantilever switch through drive electrode, makes coupling mechanism get into basic, normal, high degree of coupling duty; Under every kind of duty; The microwave signal that accounts for incoming wave power different proportion is coupled to the terminal build-out resistor; Convert electromagnetic energy into heat energy through this resistance; And nighly sense corresponding temperature difference by being provided with by the thermoelectric pile of thermopair to forming, on the output press welding block with constant thermoelectrical potential output.
The structure that satisfies above condition promptly is regarded as micromechanics degree of coupling reconfigurable microwave power of the present invention at thread detector.
Claims (4)
1. a micromechanics degree of coupling reconfigurable microwave power is at thread detector; Be produced on the gallium arsenide substrate (28); Be provided with main line (5), by-pass (6), coupled microstrip line (7 above that; 8), transition microstrip line (9), MEMS cantilever beam structure (13,20), drive electrode (15), lead-in wire (17), press welding block (18), air bridges (19), isolation resistance (22), terminal build-out resistor (23) and thermoelectric pile; It is characterized in that this device is two port devices that obtained by the degeneration of four port microwave devices, it is made up of reconfigurable microwave power coupling mechanism and indirect heating type microwave power detector two parts jointly; Described restructural coupling mechanism comprises the main line (5) that is used to connect input port (1) and straight-through output port (2), is used to be connected the by-pass (6) of coupling output port (3) and isolated port (4), transition microstrip line (9), by by-pass isolated coupled microstrip line (7 and 8) and two pairs of MEMS cantilever switch structures (13 and 20), isolated port (4) the connection isolation resistance (22) on by-pass (6); Described indirect heating type microwave power detector comprises the output press welding block (26) of coupling output terminal (3), terminal build-out resistor (23), thermoelectric pile and the thermoelectric pile of restructural coupling mechanism, its coupling output terminal (3) two terminal build-out resistors (23) that are connected in parallel.
2. micromechanics degree of coupling reconfigurable microwave power according to claim 1 is at thread detector; It is characterized in that in described reconfigurable microwave power coupling mechanism; The isolated coupled microstrip line (7 and 8) of a main line (5) of power coupling unit, three by-passes (6) and two quilts is parallel to each other, and two transition microstrip lines (9) lay respectively at the both sides of major-minor line; The anchor district (14) of a pair of short MEMS semi-girder is positioned at that main line (5) is gone up and another anchor district (21) to long MEMS semi-girder is positioned at the two ends of a coupled microstrip line (8) that is isolated by by-pass (6); Below each MEMS semi-girder, all has drive electrode (15); All cover silicon nitride medium layer (16) on its drive electrode (15), below each MEMS beam free end, be the transition microstrip line (9) of band salient point (12); Air bridges (19) is with another coupled microstrip line (7) and transition microstrip line (9) electric interconnection that is isolated by by-pass (6).
3. micromechanics degree of coupling reconfigurable microwave power according to claim 1 is at thread detector; It is characterized in that in described indirect heating type microwave power detector; Two terminal build-out resistors (23) are parallel-connected to the coupling output port (3) of restructural coupling mechanism, and the other end of its each terminal build-out resistor (23) all is connected to the common ground of microstrip line through through hole (27); Be equipped with the thermopair of being made up of semiconductor thermocouple arm (24) and metal thermocouple arm (25) near each terminal build-out resistor (23), these thermopairs formation thermoelectric pile that interconnects each other has output press welding block (26) at the two ends of its thermoelectric pile.
4. a micromechanics degree of coupling reconfigurable microwave power as claimed in claim 1 is characterized in that in the preparation method of thread detector the preparation method is:
1) prepares gallium arsenide substrate (28): select the semi-insulating GaAs substrate (28) of extension for use, wherein extension N
+The doping content of gallium arsenide is for being 10
18Cm
-3
2) at the N of extension
+Gallium arsenide substrate (28) applies photoresist, keeps preparation and makes ohmic contact regions and the photoresist that begins to take shape the semiconductor thermocouple arm (25) of thermoelectric pile, removes the N of the local extension of photoresist then
+Gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm (25) that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm (25) that begins to take shape, being completed into its doping content is 10
17Cm
-3The semiconductor thermocouple arm (25) of thermoelectric pile;
4) substrate that obtains in step 3) (28) is gone up and is applied photoresist, removes the photoresist that does not need bump making process (12) local;
5) etching gallium arsenide substrate (28) is removed photoresist, forms the gallium arsenide substrate (28) of band salient point (12) shape;
6) substrate that obtains in step 5) (28) is gone up and is applied photoresist, the photoresist that the metal thermocouple arm (24) of removal preparation making thermoelectric pile is located;
7) go up sputter gold germanium nickel/gold at substrate (28), its thickness is 2700 altogether;
8) peel off the photoresist that stays in the removal step 6), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm (24) of formation thermoelectric pile removed;
9) substrate that obtains in step 8) (28) is gone up and is applied photoresist, removes the photoresist that preparation making isolation resistance (22) and terminal build-out resistor (26) are located;
10) go up the sputter tantalum nitride at substrate (28), its thickness is 1
μM;
11) photoresist lift off that stays in the step 9) is removed, the tantalum nitride above the related removal photoresist begins to take shape the isolation resistance (22) and the terminal build-out resistor (23) that are made up of tantalum nitride;
12) go up the coating photoresist in gallium arsenide substrate (28); Remove preparation and make the main line (5) that constitutes by microstrip line; By-pass (6); Coupled transmission line (7 and 8), transition microstrip line (9), the anchor district (14 and 21) of MEMS semi-girder (13 and 20), MEMS semi-girder, drive electrode (15), press welding block (18), output press welding block (26), air bridges (19) and lead-in wire (17);
13) go up through evaporation mode growth one deck gold at substrate (28), its thickness is 0.3
μM;
14) photoresist that step 12) is stayed is removed; Relatedly removed the gold above the photoresist; Begin to take shape the main line (5) that constitutes by microstrip line, by-pass (6), coupled transmission line (7 and 8); Transition microstrip line (9), the anchor district (14 and 21) of MEMS semi-girder (13 and 20), MEMS semi-girder, drive electrode (15), press welding block (18), output press welding block (26), air bridges (19) and lead-in wire (17);
15) anti-carve tantalum nitride, be completed into isolation resistance (22) and terminal build-out resistor (23);
16) deposit and photoetching polyimide sacrificial layer: go up coating 1.6 in gallium arsenide substrate (28)
μThe polyimide sacrificial layer that m is thick requires to fill up pit, and the thickness of polyimide sacrificial layer has determined the height of MEMS semi-girder with (13 and 20) and air bridges (19); The photoetching polyimide sacrificial layer, only keep MEMS semi-girder (13 and 20) and air bridges (19) below sacrifice layer;
17) down payment that is used to electroplate through the evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
18) apply photoresist; Remove preparation and make the main line (5) that constitutes by microstrip line; By-pass (6); Coupled transmission line (7 and 8), transition microstrip line (9), the anchor district (14 and 21) of MEMS semi-girder (13 and 20), MEMS semi-girder, drive electrode (15), press welding block (18), output press welding block (26), air bridges (19) and the local photoresist of lead-in wire (17);
19) electroplate one deck gold, its thickness is 2
μM;
20) photoresist that stays removal step 18);
21) anti-carve titanium/gold/titanium; The corrosion down payment; The main line that formation is made up of microstrip line (5), by-pass (6), coupled transmission line (7 and 8); Transition microstrip line (9), the anchor district (14 and 21) of MEMS semi-girder (13 and 20), MEMS semi-girder, drive electrode (15), press welding block (18), output press welding block (26), air bridges (19) and lead-in wire (17);
22) with this gallium arsenide substrate (28) thinning back side to 100
μM;
23) the substrate back dry etching is made through hole (27);
24) evaporation one deck gold at this gallium arsenide substrate (28) back side;
25) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under MEMS semi-girder (13 and 20) and the air bridges (19), and deionized water soaks slightly, the absolute ethyl alcohol dehydration, and normal temperature volatilization is down dried.
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| CN106698326A (en) * | 2017-01-24 | 2017-05-24 | 东南大学 | Direct heating type millimeter wave signal detector based on silicon-based micromechanical cantilever beam T-shaped junction |
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| CN111044796B (en) * | 2019-12-31 | 2022-03-29 | 东南大学 | Symmetrical thermoelectric MEMS microwave standing wave meter and preparation method thereof |
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