CN102435616B - Monitoring method of stability of crystal edge detector - Google Patents
Monitoring method of stability of crystal edge detector Download PDFInfo
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- CN102435616B CN102435616B CN201110265326.3A CN201110265326A CN102435616B CN 102435616 B CN102435616 B CN 102435616B CN 201110265326 A CN201110265326 A CN 201110265326A CN 102435616 B CN102435616 B CN 102435616B
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Abstract
The invention discloses a novel monitoring method of the stability of a crystal edge detector, comprising the following steps: selecting a proper finished product of a chip as a new standard chip of subsequent detection by a machine, wherein, the chip is provided with a plurality of defects having different types and dimensions fixed on the surface and is not used in any other process; respectively overlapping scans of three surfaces on the standard chip converted by the finished product of the chip in daily detection to use the number of the overlapped defects having same coordinate positions as a value of calculating the capture rate and use the number of the unoverlapped defects as a value of calculating the failure rate. According to the invention, by using the capture rates and failure rates of the three surfaces, the capacity of collecting data on different surface defects of the machine and the stability and accuracy of the machine can be detected visually.
Description
Technical field
The present invention relates to the method that the stability of semiconductor testing tool is tested, in particular to a kind of method for supervising of novel stability of crystal edge detector.
Background technology
Along with the continuous Bian great ， factory of the development of integrated circuit technology and wafer silicon sheet material size more and more focuses on the defect situation of crystal round fringes.Utilizing CV300R detection board to carry out defects detection to crystal round fringes is a kind of character surveillance of processing step fast and effectively method.Therefore, guarantee that detection board self stability and accuracy seem most important.
Self detection method that at present CV300R adopts is the standard film mating with board by using, and the front of this standard film, side and the back side all comprise the particle of some, and are irremovable at crystal column surface.Board obtains the total number of particles order of three face 1um sizes by routine testing; by the particle benchmark number of 1um size on the particle numeric ratio of the 1um size measuring; its ratio result represents that in time between (90%, 110%) board meets operation standard, and board can normally be used.
But self detection method that CV300R adopts is in the industry too simple, stability and accuracy that cannot actual reflection board self.Particularly, there are following two problems:
First, under this detection method, when having problem to cause the numbers of particles of certain face to be missed some or have, board stability increases some unknown defects, its one side ratio is (90%, 110%) outside, but the ratio of three faces is still within default scoping, and board problem still cannot embody so;
The second, this detection method cannot truly reflect the detectability of board to different size and type flaw.
Therefore, provide a kind of method of can be effectively and detecting exactly stability of crystal edge detector just to seem particularly important.
Summary of the invention
The object of the invention is to avoid board self check in prior art cannot completely truly reflect the defect of board performance.
The present invention discloses a kind of method for supervising of novel stability of crystal edge detector, for determining whether described wafer prober can work, and wherein, comprises the steps:
Provide a finished product wafer as reference plate, on the front of described reference plate, the back side and circumference side thereof, all have the defect of a plurality of different sizes, type;
Make respectively the Defect Scanning figure of front, the back side and the circumference side thereof of reference plate described in multiple;
Make respectively positive original graph, back side original graph and circumference side original graph, in described positive original graph, comprise the positive defect falling on scintigram of the described reference plate of part, in the original graph of the described back side, comprise that the described reference plate of the part back side falls into the defect on scintigram, in the original graph of described circumference side, comprise that the described reference plate circumference of part side falls into the defect on scintigram;
Carry out routine testing, by daily scintigram and the folded figure of original graph, the defect with same coordinate is gathered to summation, the defect of increase is gathered to summation;
The capture rate respectively front of wafer, the back side and circumference side thereof being carried out and mortality calculate, if capture rate between 90% ~ 110% and mortality be not more than 10%, the qualified end monitoring of instrument;
If capture rate lower than 90% and mortality be greater than 10%, shutdown inspection.
Above-mentioned method, wherein, in described step of making respectively the Defect Scanning figure of front, the back side and the circumference side thereof of reference plate described in multiple, also comprises the steps:
Scan respectively front, the back side and the circumference side several times thereof of described reference plate;
Described in every run-down, the front of reference plate forms a corresponding front Defect Scanning figure;
Described in every run-down, the back side of reference plate forms a corresponding defect on back side scintigram;
Described in every run-down, the circumference side of reference plate forms a corresponding circumference planar defect scintigram.
Above-mentioned method, wherein,
In described positive original graph, have a plurality of the first defects, the number of times that described the first defect appears at the same coordinate position of multiple front Defect Scanning figure surpasses first threshold;
In the original graph of the described back side, have a plurality of the second defects, the number of times that described the second defect appears at the same coordinate position of multiple defect on back side scintigrams surpasses Second Threshold;
In the original graph of the described back side, have a plurality of the 3rd defects, the number of times that described the 3rd defect appears at the same coordinate position of multiple defect on back side scintigrams surpasses the 3rd threshold value.
Above-mentioned method, wherein, makes respectively the Defect Scanning figure of front, the back side and the circumference side thereof of 10 described reference plates.
Above-mentioned method, wherein, described first threshold, Second Threshold and the 3rd threshold value are 8.
Above-mentioned method, wherein, the number span of the defect all having on the front of described reference plate, the back side and circumference side is all between 20 to 2000.
Above-mentioned method, wherein, on described reference plate, the size value scope of defect is 0.5um to 5um.
The principle of the invention is to choose the finished product wafer that a slice is suitable, and the defect that this sheet has the dissimilar and size of some is fixed on surface, and this sheet is no longer done other technological process, the new reference plate detecting as later this board.When routine testing, the scintigram of three faces is folded to figure with the reference plate original graph that finished product wafer converts to respectively, using the number of the defect with same coordinate position being laminated to as the value of calculating capture rate, using the number of the defect not being laminated to as the value of calculating mortality.
Capture rate and these six values of mortality by three faces can detect board more intuitively in the different plane defects collection abilities of signal and the stability of board and accuracy.
Accompanying drawing explanation
By reading the detailed description of non-limiting example being done with reference to the following drawings, it is more obvious that the present invention and feature thereof, profile and advantage will become.In whole accompanying drawings, identical mark is indicated identical part.Deliberately proportionally do not draw accompanying drawing, focus on illustrating purport of the present invention.In the accompanying drawings, for cheer and bright, part parts have been amplified.
Fig. 1 shows according to of the present invention, a kind of process flow diagram of method for supervising of novel stability of crystal edge detector.
Embodiment
Below in conjunction with the drawings and the specific embodiments, the present invention is further elaborated.Embodiment described herein is only for explaining the present invention, the protection domain being not intended to limit the present invention.
Related term " first ", " second ", " the 3rd " and the similar content in claims and instructions of this instructions is for distinguishing similar element rather than for describing sequencing from time, space, rank or other any modes.Suitable in the situation that, be used interchangeably.
With reference to figure 1, show according to of the present invention a kind of process flow diagram of method for supervising of novel stability of crystal edge detector.The present invention is for determining whether described wafer prober can work, and wherein, comprises the steps:
First perform step S210, provide a finished product wafer as reference plate.The defect that all has a plurality of different sizes, type on the front of described reference plate, the back side and circumference side thereof, because the defect of general common finished product wafer surface is few, therefore, need special a slice, make its surperficial defect number abundant, and there is the defect of various different sizes, type.
Then, execution step S211, makes respectively the Defect Scanning figure of front, the back side and the circumference side thereof of reference plate described in multiple.The information such as position coordinates of the defect on three faces of described reference plate are carried out to record.Conventionally the Defect Scanning figure of each face need to be made to many parts, the mark of the Defect Scanning figure of described each face of reference plate is more, is more conducive to sampling, makes testing result of the present invention more accurate.
Perform step again S212, make respectively positive original graph, back side original graph and circumference side original graph.In described positive original graph, comprise the positive defect falling on scintigram of the described reference plate of part, in the original graph of the described back side, comprise that the described reference plate of the part back side falls into the defect on scintigram, in the original graph of described circumference side, comprise that the described reference plate circumference of part side falls into the defect on scintigram.Described original graph is for follow-up comparison, and therefore, the defect in described original graph is chosen the defect comparatively accurately showing on the Defect Scanning figure of described reference plate.
Then, execution step S213, carries out routine testing, by daily scintigram and the folded figure of original graph, the defect with same coordinate is gathered to summation, and the defect of increase is gathered to summation.This step is that the present invention is for the whether qualified Data support that provides of instrument is provided, wherein, together with having illustrated, the defect that daily scintigram and original graph have an identical coordinate defect detected accurately, therefore, the defect with same coordinate is gathered to summation adds up the defect detecting together exactly, and daily scintigram is compared with original graph, the defect increasing does not scan out, belong to the defect not capturing, therefore, the defect of increase being gathered to summation adds up the defect of not missing exactly.
Finally, add up respectively verification and measurement ratio and loss, these two numerical value calculate by capture rate and mortality, execution step S214, and the capture rate respectively front of wafer, the back side and circumference side thereof being carried out and mortality calculate.If capture rate between 90% ~ 110% and mortality be not more than 10%, the qualified end of instrument monitoring; If capture rate lower than 90% and mortality be greater than 10%, shutdown inspection.
Wherein, the computing formula of capture rate: CR(Capture rate)=common defect count/raw map defect count*100%;
The computing formula of mortality: FR(False rate)=daily add defect count/raw map defect count*100%;
In above-mentioned formula, CR(Capture rate) refer to capture rate, the quantity that the defect of same coordinate of referring to common defect count to have in routine testing gathers, raw map defect count refers to the quantity of the coordinate of the defect in original graph, FR(False rate) refer to mortality, the quantity that the defect increasing in a few days often monitoring of daily add defect count gathers.When calculating, need to calculate respectively capture rate and the mortality of three faces of wafer, if there is the result of calculation of a face defective, this board just needs shutdown inspection.
In above-mentioned method, in step S211, in described step of making respectively the Defect Scanning figure of front, the back side and the circumference side thereof of reference plate described in multiple, also comprise the steps:
Scan respectively front, the back side and the circumference side several times thereof of described reference plate;
Described in every run-down, the front of reference plate forms a corresponding front Defect Scanning figure;
Described in every run-down, the back side of reference plate forms a corresponding defect on back side scintigram;
Described in every run-down, the circumference side of reference plate forms a corresponding circumference planar defect scintigram.
And in step S212, while making original graph, be not that the defect on the Defect Scanning figure of described reference plate is all recorded in original graph, but select the representative defect of a part, be chosen at the more defect of occurrence number on described multiple Defect Scanning figure.Make to have a plurality of the first defects in described positive original graph, the number of times that described the first defect appears at the same coordinate position of multiple front Defect Scanning figure surpasses first threshold; In the original graph of the described back side, have a plurality of the second defects, the number of times that described the second defect appears at the same coordinate position of multiple defect on back side scintigrams surpasses Second Threshold; In the original graph of the described back side, have a plurality of the 3rd defects, the number of times that described the 3rd defect appears at the same coordinate position of multiple defect on back side scintigrams surpasses the 3rd threshold value.Wherein, described first threshold is not more than the number of described front Defect Scanning figure, and described Second Threshold is not more than the number of described defect on back side scintigram, and described the 3rd threshold value is not more than the number of described circumference planar defect scintigram.
In a specific embodiment, make respectively the Defect Scanning figure of front, the back side and the circumference side thereof of 10 described reference plates, now, first threshold, Second Threshold and the 3rd threshold value are all not more than 10.
Preferably, wherein, described first threshold, Second Threshold and the 3rd threshold value are 8.
Those skilled in the art understand, the number of the Defect Scanning figure of most each faces of reference plate can arrange as required, The more the better, the size of described first threshold, Second Threshold and the 3rd threshold value as the case may be, getting the more defect of occurrence number on described Defect Scanning figure is as the criterion, ignore and only occur the defect of twice, make the original graph of making of the present invention have more representativeness.
Further, the number span of the defect all having on the front of the reference plate that the present invention is selected, the back side and circumference side is all between 20 to 2000, to meet the needs that can scan enough defect numbers.
Further, on described reference plate, the size value scope of defect is 0.5um to 5um.
Below give an example, if in a detection, in front, the back side and the circumference side original graph of making according to method of the present invention, respectively there are 30 defects, the scintigram and the original graph that after routine testing scanning, obtain are folded figure, if having the defect number of same coordinate after the folded figure of front scan figure and positive original graph is 24, the defect number newly increasing is 6, and the coordinate same defect of other two faces is 30, do not newly increase defect, the capture rate of visible front scan figure is:
CR=24/30*100%=80%
Mortality is:
FR=6/30*100%=20%
Undesirable, therefore, need to shut down and detect.
It should be appreciated by those skilled in the art that those skilled in the art can realize described variation example in conjunction with prior art and above-described embodiment, such variation example does not affect flesh and blood of the present invention, does not repeat them here.
Above preferred embodiment of the present invention is described.It will be appreciated that, the present invention is not limited to above-mentioned particular implementation, and the equipment of wherein not describing in detail to the greatest extent and structure are construed as with the common mode in this area to be implemented; Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or being revised as the equivalent embodiment of equivalent variations, this does not affect flesh and blood of the present invention.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (7)
1. whether a method for supervising for novel stability of crystal edge detector, can work for definite described crystal edge detector, it is characterized in that, comprises the steps:
Provide a finished product wafer as reference plate, on the front of described reference plate, the back side and circumference side thereof, all have the defect of a plurality of different sizes, type;
Make respectively the Defect Scanning figure of front, the back side and the circumference side thereof of reference plate described in multiple;
Make respectively positive original graph, back side original graph and circumference side original graph, in described positive original graph, comprise the positive defect falling on scintigram of the described reference plate of part, in the original graph of the described back side, comprise that the described reference plate of the part back side falls into the defect on scintigram, in the original graph of described circumference side, comprise that the described reference plate circumference of part side falls into the defect on scintigram;
Carry out routine testing, by daily scintigram and the folded figure of original graph, the defect with same coordinate is gathered to summation, the defect of increase is gathered to summation;
The relevant the capture rate respectively front of wafer crystal edge, the back side and circumference side thereof being carried out and mortality calculate, and judgement finishes monitoring or shutdown inspection according to result of calculation;
Wherein, the computing formula of described capture rate is: the defect in capture rate=routine testing with same coordinate gathers the defects count * 100% in quantity/original graph;
The computing formula of described mortality is: the defect increasing in mortality=daily monitoring gathers the defects count * 100% in quantity/original graph.
2. the method for claim 1, is characterized in that, in described step of making respectively the Defect Scanning figure of front, the back side and the circumference side thereof of reference plate described in multiple, also comprises the steps:
Scan respectively front, the back side and the circumference side several times thereof of described reference plate;
Described in every run-down, the front of reference plate forms a corresponding front Defect Scanning figure;
Described in every run-down, the back side of reference plate forms a corresponding defect on back side scintigram;
Described in every run-down, the circumference side of reference plate forms a corresponding circumference planar defect scintigram.
3. the method for claim 1, is characterized in that,
In described positive original graph, have a plurality of the first defects, the number of times that described the first defect appears at the same coordinate position of multiple front Defect Scanning figure surpasses first threshold;
In the original graph of the described back side, have a plurality of the second defects, the number of times that described the second defect appears at the same coordinate position of multiple defect on back side scintigrams surpasses Second Threshold;
In the original graph of the described back side, have a plurality of the 3rd defects, the number of times that described the 3rd defect appears at the same coordinate position of multiple defect on back side scintigrams surpasses the 3rd threshold value.
4. method as claimed in claim 3, is characterized in that, makes respectively the Defect Scanning figure of front, the back side and the circumference side thereof of 10 described reference plates.
5. method as claimed in claim 4, is characterized in that, described first threshold, Second Threshold and the 3rd threshold value are 8.
6. the method as described in any one in claim 1 to 5, is characterized in that, the number span of the defect all having on the front of described reference plate, the back side and circumference side is all between 20 to 2000.
7. method as claimed in claim 6, is characterized in that, on described reference plate, the size value scope of defect is 0.5um to 5um.
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102865841B (en) * | 2012-09-17 | 2016-01-27 | 上海华力微电子有限公司 | The Thickness sensitivity Detection of Stability method of crystal round fringes tolerance and testing tool |
| CN104282587B (en) * | 2013-07-03 | 2019-05-31 | 中芯国际集成电路制造(上海)有限公司 | The detection method of defects of wafer edge |
| CN103424410B (en) * | 2013-08-02 | 2016-04-27 | 上海华力微电子有限公司 | The method of wafer defect automated visual inspection |
| CN104022052B (en) * | 2014-04-22 | 2017-07-07 | 上海华力微电子有限公司 | A kind of position synchronous method of defects detection and facilities for observation |
| US10514685B2 (en) | 2014-06-13 | 2019-12-24 | KLA—Tencor Corp. | Automatic recipe stability monitoring and reporting |
| DE102014215727B4 (en) * | 2014-08-08 | 2016-06-09 | Siltronic Ag | Method for monitoring the operating state of a surface inspection system for detecting defects on the surface of semiconductor wafers |
| CN104766810B (en) * | 2015-03-30 | 2017-08-22 | 上海华力微电子有限公司 | A kind of detection method of defects of wafer edge |
| CN106645211B (en) * | 2016-12-28 | 2019-07-12 | 武汉华星光电技术有限公司 | For correcting the detection jig and method of the scanning sensor of dry ecthing board |
| CN110808220B (en) * | 2019-11-08 | 2022-11-25 | 上海华力微电子有限公司 | Wafer back scanner, wafer back scanning method and wafer scanning method |
| CN112927192A (en) * | 2021-01-29 | 2021-06-08 | 中芯集成电路制造(绍兴)有限公司 | Method for marking ink dots on wafer |
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