CN102427045B - Original position moisture-generation process real-time detection method - Google Patents
Original position moisture-generation process real-time detection method Download PDFInfo
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- CN102427045B CN102427045B CN201110342051.9A CN201110342051A CN102427045B CN 102427045 B CN102427045 B CN 102427045B CN 201110342051 A CN201110342051 A CN 201110342051A CN 102427045 B CN102427045 B CN 102427045B
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Abstract
A kind of original position moisture-generation process real-time detection method, including: adopt Quantox to measure board and oxidated layer thickness total in multi-layer film structure is taken multiple measurements, record measured oxidated layer thickness and corresponding oxidization time respectively; Relation according to described oxidated layer thickness T Yu described oxidization time t meets linear dependence: T=k*t+m, it is judged that whether measured oxidated layer thickness T meets identical linear dependence with corresponding oxidization time t; If measured multiple corresponding for oxidated layer thickness T oxidization time t is unsatisfactory for identical linear dependence, oxide layer grown into Row sum-equal matrix, and repeat the above steps, until oxidated layer thickness T is with it, each self-corresponding oxidization time t meets identical linear dependence. The present invention is relative to conventional optical detecting method, it is possible to effectively judges whether original position moisture-generation process is stable and monitors, being not only easy to implement, and result is more stable and accurate, especially to multi-layer film structure more effectively.
Description
Technical field
The present invention relates to semiconductor fabrication process, and particularly to original position moisture-generation process real-time detection method.
Background technology
Original position steam generates (In-SituSteamGeneration, ISSG) method is a kind of technique growing oxide layer by superheated vapor atmosphere, the speed of its growth oxide layer, and, original position steam is adopted to generate the gate oxidation films that method grows, the gate oxidation films obtained relative to employing boiler tube wet oxidation, has more prominent electric property. Specifically, when adopting Rapid Thermal processing procedure (RTP) equipment to perform original position steam generation method, the speed of heating and cooling, Rapid Thermal process apparatus simultaneously as single-wafer process equipment, relative to the boiler tube of usual simultaneous oxidation tens wafer, the gas source that the wafer contacts in Rapid Thermal process apparatus arrives is relatively more abundant, and the speed of growth also making oxide layer is very fast, therefore, Rapid Thermal process apparatus is used to carry out the processing time of original position steam growth comparatively short. Although highly doped common source region makes oxygen atom be easier to pass through its diffusion, but because processing time is shorter, oxygen atom does not have time enough with pasc reaction to form silicon oxide, and correspondingly, the oxidation reaction speed in doped region and undoped region is just more or less the same. Therefore, the method generated by described original position steam can accurately control the thickness of highly doped common source region oxide layer growth. Additionally, original position moisture-generation process is low pressure processing procedure, the thickness of the oxide layer of its growth also ratio is more uniform, such that it is able to improve smile effect.
Sum it up, original position steam generates method has broad prospect of application in deep submicron integrated circuit device manufacture. Generate the processing technology of method about original position steam, can be 200910196205.0 with further reference to application number, name be called the Chinese patent application of " manufacture method of oxide layer between splitting grids ".
When adopting original position moisture-generation process, it is monitored usually by the thickness of its grown oxide layer and detects, and then the control that realization is to original position moisture-generation process. At present, the method generally adopting optical measurement, for example with optical stage such as KLVF5X, the oxide layer grown in original position moisture-generation process is detected, but adopt optical stage to detect, there is relatively Multiple Constraints, affected by environment also comparatively obvious, film layer structure is more complicated, optical detection is more difficult to, reliability is also more low, often measurement cannot obtain reliable results after oxide layer growth stops, thus effect art production process carrying out in real time effectively monitoring and adjusting cannot be played.
Summary of the invention
The present invention proposes a kind of original position moisture-generation process real-time detection method, it is possible to effectively in real time the growth of oxide layer in technique being detected, be easy to implement, result is more stable and accurate, has saved the process time, improves production efficiency.
In order to realize above-mentioned technical purpose, the present invention proposes a kind of original position moisture-generation process real-time detection method, including: adopt Quantox to measure board and oxidated layer thickness total in multi-layer film structure is taken multiple measurements, and record the oxidization time of described oxidated layer thickness and correspondence thereof respectively; Relation according to described oxidated layer thickness T and described oxidization time t meets: T=k*t+m, it is judged that subsequently the oxidated layer thickness T in technique whether meet identical linear dependence with corresponding oxidization time t; If measured multiple corresponding for oxidated layer thickness T oxidization time t is unsatisfactory for identical linear dependence, oxide layer grown into Row sum-equal matrix, and repeat the above steps, until oxidated layer thickness T is with it, each self-corresponding oxidization time t meets identical linear dependence.
Optionally, for identical film layer structure, described oxidated layer thickness T and the linear ratio k of described oxidization time t is only relevant with the oxygenation efficiency of the first material layer for growing oxide layer.
Optionally, described first material layer is silicon nitride.
Optionally, at least adopt Quantox to measure board and measure the oxidization time of three groups of oxidated layer thickness and correspondence thereof.
Optionally, whether the oxidated layer thickness T measured by described judgement meets identical linear dependence with corresponding oxidization time t includes: calculate its corresponding linear rate k according to measured oxidated layer thickness T and corresponding oxidization time t respectively, when computed linear rate k is identical, then described oxidated layer thickness T meets identical linear dependence with corresponding oxidization time t.
Optionally, whether the oxidated layer thickness T measured by described judgement meets identical linear dependence with corresponding oxidization time t includes: the value according to measured any two groups of oxidated layer thickness and corresponding oxidization time thereof, draws linearity curve; When dropping on when the oxidization time of other measured oxidated layer thickness and correspondence thereof on the linearity curve drawn or its extended line, then oxidated layer thickness T meets identical linear relationship with corresponding oxidization time t.
Optionally, the oxidization time t corresponding for many groups oxidated layer thickness T of described measurement is unsatisfactory for identical linear dependence and includes: the linear ratio between each oxidization time t corresponding for group oxidated layer thickness T differs greatly.
The invention have the benefit that relative to conventional optical detecting method, particularly with multi-layer film structure, not only it is easy to implement, and result is more stable and accurate, effectively can judge whether original position moisture-generation process is stable and monitor, both saved the process time, also improved production efficiency.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of a kind of embodiment of stepped oxide layer field plate manufacture method of the present invention;
Fig. 2 is the generalized section of a step S11 detailed description of the invention shown in Fig. 1;
Fig. 3 is the linear diagram of oxidated layer thickness T and corresponding oxidization time t.
Detailed description of the invention
Inventor is in conjunction with long-term production experience, by adopting QUANTOX board that the oxidated layer thickness grown in original position moisture-generation process is detected, find and summed up oxidated layer thickness and the linear dependence existing for oxidization time, and utilize the linear rate of oxidated layer thickness and oxidization time that the production process of original position moisture-generation process is monitored, thus growth that is more stable and that accurately control oxide layer, improve production efficiency.
Below in conjunction with specific embodiments and the drawings, original position moisture-generation process real-time detection method of the present invention is described in detail.
With reference to Fig. 1, a kind of detailed description of the invention of original position moisture-generation process real-time detection method of the present invention can comprise the following steps that
Step S11, adopts Quantox to measure board and oxidated layer thickness total in plural layers is taken multiple measurements, and record the oxidization time that described oxidated layer thickness is corresponding respectively;
Step S12, meets according to the relation of described oxidated layer thickness T and described oxidization time t: T=k*t+m, it is judged that whether oxidated layer thickness T measured in step S11 meets identical linear dependence with corresponding oxidization time t;
Step S13, if according to step S12, the total oxidization time t corresponding for oxidated layer thickness T of plural layers measured by step S11 is unsatisfactory for identical linear dependence, oxide layer grown into Row sum-equal matrix, and repeat step S11 to step S12, until oxidated layer thickness T is with it, each self-corresponding oxidization time t meets identical linear dependence.
Inventor sums up in long-term production practices exists following linear dependence between described oxidated layer thickness T and described oxidization time t, i.e. T=k*t+m. And, m value is relevant with film layer structure, wherein said film layer structure comprises the material of the first material layer for growing oxide layer and its adjacent rete (BL) and the structural order of each rete, specifically, m value is relevant with the adjacent rete (BL) of the first material layer and lower floor thereof for growing oxide layer, for same film layer structure, m value remains unchanged; And coefficient k, namely described oxidated layer thickness T-phase is for the linear rate of described oxidization time t, has following relation: k=a* (R*ET-En), wherein, a is the oxygenation efficiency of the first material layer for growing described oxide layer, and R is the ratio of the oxidated layer thickness grown and the first material layer consumed, ET by the ratio of equivalent electrical thickness and physical thickness of growth oxide layer, EnBy the ratio of equivalent electrical thickness and physical thickness of consumption the first material layer. For same growth substrate, parameter ET��EnIt is definite value with R. It is to say, linear rate k is only relevant with the oxygenation efficiency a of described first material layer, thus by the linear rate k of described oxide thickness T Yu described oxidization time, the growth of oxide layer can be monitored.
Specifically, in a kind of specific embodiment, with reference to Fig. 2, can by original position moisture-generation process growth oxide layer 101 on the first material layer 100, wherein, the first material layer 100 can be silicon nitride (SiN). In other embodiments, described first material layer may be used without other material, and the invention thinking of the present invention is not impacted by the selection of its material.
In step s 11, three oxidated layer thickness and its each corresponding oxidization time are at least measured.
In a kind of embodiment of step S12, the linear rate k of correspondence can be calculated respectively according to oxidated layer thickness T measured in step S11 and corresponding oxidization time t, when the linear rate k of computed acquisition is identical, then oxidated layer thickness T meets identical linear dependence with corresponding oxidization time t.
In the another embodiment of step S12, with reference to Fig. 3, any two groups of oxidated layer thickness measured by step S11 and the value of the oxidization time of correspondence thereof, draw linearity curve; When dropping on when the oxidization time of other oxidated layer thickness measured by step S11 and correspondence thereof on above-mentioned linearity curve or its extended line, then oxidated layer thickness T meets identical linear relationship with corresponding oxidization time t.
In other embodiment of step S12, also can adopt other mode judges whether there is identical linear relationship between measured many groups oxidated layer thickness T and its each corresponding oxidization time, the concrete mode judged can be determined according to the convenience of the needs of production practices and calculating, and the invention thinking of the present invention is not impacted by it.
In step s 13, consider the error of oxidated layer thickness data acquisition, when most of oxidization time t corresponding for oxidated layer thickness T meet a kind of linear dependence, and only existing oxidization time t corresponding for respective oxidation layer thickness T when being unsatisfactory for described linear dependence, then it is assumed that oxidated layer thickness T still meets identical linear dependence with corresponding oxidization time t. And the linear ratio between the oxidization time t that measured each oxidated layer thickness T is corresponding is when differing greatly, then corresponding for oxidated layer thickness T oxidization time t is unsatisfactory for identical linear dependence, now needs that original position steam is generated process parameter and is adjusted. Wherein, the invention thinking of the present invention is not impacted by the concrete parameter that adjusts with adjustment mode.
In above-mentioned each detailed description of the invention, according to the linear relationship between the oxidization time t corresponding for oxidated layer thickness T that inventor sums up, effectively in real time the growth of oxide layer in original position moisture-generation process can be detected, relative to optical detection, not only implementation process is easy, and result is more stable and accurate, has both saved the process time, also improve production efficiency such that it is able to effectively original position moisture-generation process is monitored.
Those skilled in the art will be understood that, in the respective embodiments described above, such as, in original position moisture-generation process, the inventive concept of original position moisture-generation process real-time detection method of the present invention is not caused restriction by the realization of design parameter or concrete steps, can adopt but be not limited to existing Conventional process parameters, raw material and equipment in above-mentioned each processing step.
Although the present invention is with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art are without departing from the spirit and scope of the present invention; may be by the method for the disclosure above and technology contents and technical solution of the present invention is made possible variation and amendment; therefore; every content without departing from technical solution of the present invention; according to any simple modification, equivalent variations and modification that above example is made by the technical spirit of the present invention, belong to the protection domain of technical solution of the present invention.
Claims (4)
1. an original position moisture-generation process real-time detection method, it is characterised in that including:
Adopt Quantox to measure board oxidated layer thickness total in multi-layer film structure is taken multiple measurements, and record the oxidization time of described oxidated layer thickness and correspondence thereof respectively;
Relation according to described oxidated layer thickness T and described oxidization time t meets: T=k*t+m, k is the described oxidated layer thickness T-phase linear rate for described oxidization time t, m value is relevant with film layer structure, it is judged that whether oxidated layer thickness T measured in production subsequently meets identical linear dependence with corresponding oxidization time t;
If measured multiple corresponding for oxidated layer thickness T oxidization time t is unsatisfactory for identical linear dependence, oxide layer grown into Row sum-equal matrix, and repeat the above steps, until oxidated layer thickness T is with it, each self-corresponding oxidization time t meets identical linear dependence;
Whether the oxidated layer thickness T measured by described judgement meets identical linear dependence with corresponding oxidization time t includes: calculate its corresponding linear rate k according to measured oxidated layer thickness T and corresponding oxidization time t respectively, when computed linear rate k is identical, then described oxidated layer thickness T meets identical linear dependence with corresponding oxidization time t; Or whether the oxidated layer thickness T measured by described judgement meets identical linear dependence with corresponding oxidization time t and include: the value according to measured any two groups of oxidated layer thickness and corresponding oxidization time thereof, draw linearity curve; When dropping on when the oxidization time of other measured oxidated layer thickness and correspondence thereof on the linearity curve drawn or its extended line, then oxidated layer thickness T meets identical linear relationship with corresponding oxidization time t;
The oxidization time t corresponding for many groups oxidated layer thickness T of described measurement is unsatisfactory for identical linear dependence and includes: the linear ratio between each oxidization time t corresponding for group oxidated layer thickness T differs greatly.
2. original position moisture-generation process real-time detection method as claimed in claim 1, it is characterized in that, for identical film layer structure, described oxidated layer thickness T and the linear ratio k of described oxidization time t is only relevant with the oxygenation efficiency of the first material layer for growing oxide layer.
3. original position moisture-generation process real-time detection method as claimed in claim 2, it is characterised in that described first material layer is silicon nitride.
4. original position moisture-generation process real-time detection method as claimed in claim 1, it is characterised in that at least adopt Quantox to measure board and measure the oxidization time of three groups of oxidated layer thickness and correspondence thereof.
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| CN104465440A (en) * | 2014-11-26 | 2015-03-25 | 上海华力微电子有限公司 | Method for monitoring growth defects of in-situ steam growth gate oxide film |
| CN105719983B (en) * | 2016-02-17 | 2019-06-07 | 上海华力微电子有限公司 | Gate oxide thickness method for real-time monitoring |
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| US6228665B1 (en) * | 2000-06-20 | 2001-05-08 | International Business Machines Corporation | Method of measuring oxide thickness during semiconductor fabrication |
| US20020146914A1 (en) * | 2001-04-06 | 2002-10-10 | Kuo-Tai Huang | In-situ steam generation process for nitrided oxide |
| US20020177327A1 (en) * | 2001-05-22 | 2002-11-28 | Macronix International Co., Ltd | Method for forming a gate dielectric layer by a single wafer process |
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Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address after: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Grace Semiconductor Manufacturing Corp. |
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