CN102427022A - Treatment method for reducing pollution and tiny dust - Google Patents
Treatment method for reducing pollution and tiny dust Download PDFInfo
- Publication number
- CN102427022A CN102427022A CN2011103550423A CN201110355042A CN102427022A CN 102427022 A CN102427022 A CN 102427022A CN 2011103550423 A CN2011103550423 A CN 2011103550423A CN 201110355042 A CN201110355042 A CN 201110355042A CN 102427022 A CN102427022 A CN 102427022A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- silicon chip
- cleaning
- treatment method
- carrying unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a treatment method for reducing pollution and tiny dust, and belongs to the technical field of electronics. The treatment method specifically comprises the following steps of: (1) moving a silicon chip into an etching bath; (2) moving the silicon chip into a rinse tank, and cleaning the silicon chip by utilizing ammonium hydroxide; (3) moving the silicon chip away from a silicon chip bearing element; and (4) moving the silicon chip bearing element into the rinse tank, and cleaning the silicon chip bearing element by utilizing the aqueous solution of hydrogen peroxide. The treatment method has the advantages that: the tiny dust and shortcomings damaging the silicon chip can be effectively reduced; a cleaning and maintenance time interval for a machine can be prolonged; and the efficiency and quality of a product can be improved.
Description
Technical field
The invention discloses a kind of processing method of polluting with micronic dust that reduces, belong to electronic technology field.
Background technology
In the manufacture of semiconductor used wet process with silicon wafer clean with wet etching be main.Wherein, the purpose that silicon wafer is cleaned is metal impurities, organic pollutants and the micronic dust of removing on the silicon wafer, and will consider the rough surface thing, and the removing of the natural oxide that possibly form, and reset procedure is extremely complicated, involves great expense.
Summary of the invention
The purpose of this invention is to provide a kind of processing method of polluting with micronic dust that reduces; After silicon wafer carries out etching and cleans; The cleaning step that adds one silicon wafer load-carrying unit again with particulate and the defective on the attenuating silicon wafer, and prolongs the time interval of board cleaning maintenance.
The objective of the invention is to realize: a kind of processing method of polluting with micronic dust that reduces through following technical scheme; After silicon wafer carries out etching and cleans; The cleaning step that adds one silicon wafer load-carrying unit again; With particulate and the defective on the attenuating silicon wafer, and prolong the time interval of board cleaning maintenance, its concrete steps are:
(1) silicon wafer is moved in the etching bath;
(2) silicon wafer is moved in the rinse bath, utilize ammonium hydroxide to carry out the cleaning of silicon wafer;
(3) remove the silicon wafer that is positioned on the silicon wafer load-carrying unit;
(4) the silicon wafer load-carrying unit is moved in the rinse bath, utilize the light aqueous solution of peroxidating to carry out the cleaning of silicon wafer load-carrying unit.
The invention has the beneficial effects as follows: can effectively lower the particulate and the defective that cause the silicon wafer injury, and prolong the time interval of board cleaning maintenance, improve the efficient and the quality of product.
Description of drawings
Fig. 1 is the flow chart of processing method of the present invention
Embodiment
Below in conjunction with accompanying drawing the present invention is described further.
As shown in Figure 1, a kind of processing method concrete steps of polluting with micronic dust that reduce are:
(1) silicon wafer is moved in the etching bath;
(2) silicon wafer is moved in the rinse bath, utilize ammonium hydroxide to carry out the cleaning of silicon wafer;
(3) remove the silicon wafer that is positioned on the silicon wafer load-carrying unit;
(4) the silicon wafer load-carrying unit is moved in the rinse bath, utilize the light aqueous solution of peroxidating to carry out the cleaning of silicon wafer load-carrying unit.
Claims (1)
1. one kind is reduced the processing method of polluting with micronic dust; After silicon wafer carries out etching and cleans; The cleaning step that adds one silicon wafer load-carrying unit again; With particulate and the defective on the attenuating silicon wafer, and prolong the time interval of board cleaning maintenance, it is characterized in that described processing method concrete steps are:
(1) silicon wafer is moved in the etching bath;
(2) silicon wafer is moved in the rinse bath, utilize ammonium hydroxide to carry out the cleaning of silicon wafer;
(3) remove the silicon wafer that is positioned on the silicon wafer load-carrying unit;
(4) the silicon wafer load-carrying unit is moved in the rinse bath, utilize the light aqueous solution of peroxidating to carry out the cleaning of silicon wafer load-carrying unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103550423A CN102427022A (en) | 2011-11-10 | 2011-11-10 | Treatment method for reducing pollution and tiny dust |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103550423A CN102427022A (en) | 2011-11-10 | 2011-11-10 | Treatment method for reducing pollution and tiny dust |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102427022A true CN102427022A (en) | 2012-04-25 |
Family
ID=45960987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103550423A Pending CN102427022A (en) | 2011-11-10 | 2011-11-10 | Treatment method for reducing pollution and tiny dust |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102427022A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108711555A (en) * | 2018-05-22 | 2018-10-26 | 徐亚琴 | A kind of semiconductor integrated circuit silicon wafer etching device |
-
2011
- 2011-11-10 CN CN2011103550423A patent/CN102427022A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108711555A (en) * | 2018-05-22 | 2018-10-26 | 徐亚琴 | A kind of semiconductor integrated circuit silicon wafer etching device |
| CN108711555B (en) * | 2018-05-22 | 2020-11-13 | 盛吉盛(宁波)半导体科技有限公司 | Silicon wafer etching device for semiconductor integrated circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104393118B (en) | The crystal silicon solar batteries Wet chemical processing method that making herbs into wool is carried out with cleaning substep | |
| CN103464415B (en) | Solar monocrystalline silicon slice cleaning fluid and cleaning method | |
| CN101276856A (en) | Process and equipment for etching and drying silicon solar cell | |
| CN102294332B (en) | Method for cleaning silicon wafer linearly cut by diamond | |
| CN102225406B (en) | Method for cleaning diamond wire-electrode cutting silicon wafer | |
| CN111446188A (en) | Semiconductor silicon wafer surface cleaning mechanism and cleaning process thereof | |
| CN103013711A (en) | Cleaning solution and cleaning process for removing metal ion contamination of crystalline silicon wafer | |
| CN1967788A (en) | Cleanout method after tungsten CMP | |
| TW200717628A (en) | Wafer edge cleaning process | |
| CN105810563A (en) | Method of washing solar cell silicon wafers | |
| CN106833954A (en) | The additive of fine-hair maring using monocrystalline silicon slice prerinse liquid and its application | |
| JP6275090B2 (en) | Process separation type substrate processing apparatus and processing method | |
| CN102427022A (en) | Treatment method for reducing pollution and tiny dust | |
| CN103361734B (en) | A kind of method improving output efficiency of polycrystalline silicon | |
| CN101414558B (en) | Method for reducing wet method etching particle pollution | |
| CN106252201A (en) | The water cleaning method of a kind of silicon chip and system | |
| CN202058706U (en) | Wafer spray rinsing drying device | |
| CN202162174U (en) | Manual silicon slice cleaning machine | |
| CN205152401U (en) | Sapphire corase grind back belt cleaning device | |
| CN109300773B (en) | Surface treatment method of wafer | |
| CN101445938A (en) | Brass wire cleaning method during titanium tetrachloride refining process by removing vanadium from a brass wire | |
| KR101000404B1 (en) | Apparatus and method for cleaning wafer | |
| CN104078327A (en) | Cleaning method after ion implantation | |
| CN204769666U (en) | Silicon chip washing unit | |
| CN207611751U (en) | Equipment for being chemically treated semiconductor substrate and mechanical transfer unit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120425 |