CN102420234A - Manufacturing method of photosensitive structure - Google Patents
Manufacturing method of photosensitive structure Download PDFInfo
- Publication number
- CN102420234A CN102420234A CN2010102998743A CN201010299874A CN102420234A CN 102420234 A CN102420234 A CN 102420234A CN 2010102998743 A CN2010102998743 A CN 2010102998743A CN 201010299874 A CN201010299874 A CN 201010299874A CN 102420234 A CN102420234 A CN 102420234A
- Authority
- CN
- China
- Prior art keywords
- substrate
- layer
- circuit layer
- manufacturing approach
- modular construction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a manufacturing method of a photosensitive structure. The manufacturing method provided by the invention comprises the following steps of: (a) forming a circuit layer on the upper surface of a first substrate, wherein the first substrate comprises at least one light sensing subassembly and the circuit layer comprises at least one subassembly structure and at least one release characteristic structure; the release characteristic structure is formed by using metal materials and is formed on parts of the light sensing subassembly and the subassembly structure; (b) covering a first light filtering layer on the partial area of the circuit layer; and (c) removing the release characteristic structure with a wet etching process.
Description
Technical field
The invention relates to a kind of manufacturing approach of photosensitive circuit, and particularly relevant for a kind of manufacturing approach of photosensitive structure.
Background technology
Semiconductor technology is integrated in various assembly on the same chip under the more and more wide situation of electronic device applications, has been main flow trend.Such as optical sensing subassembly, driving component circuit, micro-structural or the like, all can after separately carrying out light sensing driving component technology and micro-structural technology, be integrated on the same base material.So manufacturing approach is called system in package (System-in-Package again; SIP).
Another kind of already known processes is after forming optical sensing subassembly and driving component circuit; Carry out the technology of micro-structural again; Carry out the metallization process of driving component circuit again and accomplish the system of wafer level (wafer level), and after wafer is cut into chip, encapsulate the manufacturing of accomplishing chip.In the micro-structural manufacture process, adopt the plasma etching mode of reactive ion etching (RIE) to form in the micro-structural usually, movably member or part.But (profile) is unsatisfactory for the profile of the formed micro-structural of aforesaid way.And the reactive ion etching equipment needed thereby is expensive.In addition, after micro-structural formed, before carrying out Chip Packaging, particulate in the environment or pollutant possibly fall in the micro-structural, and it can't be operated.
Therefore, how designing the manufacturing approach of a new photosensitive structure, to overcome above-mentioned disappearance, is an industry problem demanding prompt solution for this reason.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of manufacturing approach of photosensitive structure, overcome the defective of prior art.
An execution mode of the present invention is that a kind of manufacturing approach of photosensitive structure is being provided; Comprise the following step: (a) form circuit layer in the upper surface of first substrate; Wherein first substrate comprises at least one optical sensing subassembly; Circuit layer comprises at least one modular construction and at least one release characteristic structure, and the release characteristic structure forms by metal material, and is formed on the optical sensing subassembly and modular construction of part; (b) cover first filter layer on the subregion of circuit layer; And (c) remove the release characteristic structure through wet etching process.
According to one embodiment of the invention, the step that wherein forms circuit layer comprises formation CMOS assembly and/or two-carrier CMOS assembly.Comprise when wherein forming CMOS assembly and/or two-carrier CMOS assembly and form the release characteristic structure.
According to another embodiment of the present invention, also comprise the formation protective layer on circuit layer in step (a), wherein protective layer does not cover the release characteristic structure.Form resistant layer on protective layer on first filter layer preceding also comprising in step (c).Also comprising configuration second substrate after the step (c) on the circuit layer top and first filter layer.Wherein second substrate is glass substrate or silicon substrate, and has the thickness to about 500 μ m for about 50 μ m.Second substrate comprises second filter layer, on the subregion that places the circuit layer and first filter layer.
According to further embodiment of this invention; Wherein the release characteristic structure is formed at the peripheral part that also centers on modular construction on the modular construction; To run through circuit layer; After removing the release characteristic structure through wet etching process, also comprise: the upper surface that exposes first substrate also comprises a step behind the upper surface that exposes first substrate: the part of the upper surface of anisotropic etching first substrate.After step (c), also comprise the following step: (d) form hole in the lower surface of first substrate, to expose circuit layer corresponding to the connection gasket below; (e) the filled high polymer material is in hole; And (f) remove first substrate corresponding to the part under the micro electromechanical structure, to discharge micro electromechanical structure.Back and the preceding step that also comprises of step (d) in step (e): grind the lower surface of first substrate, to reduce the thickness of first substrate.
According to yet another embodiment of the invention, wherein the release characteristic structure is formed on modular construction or the optical sensing subassembly and penetrates the degree of depth of circuit layer, after removing the release characteristic structure through wet etching process, also comprises: the part that exposes the corresponding degree of depth of circuit layer to the open air.
According to the embodiment that the present invention has more, wherein modular construction is essentially the micro photo-electro-mechanical structure.
According to the embodiment that the present invention has again, the step that wherein forms protective layer comprises the formation oxide skin(coating).Wet etching process uses the etchant that comprises sulfuric acid and hydrogen peroxide.
According to one embodiment of the invention, anisotropic etching comprises dark formula reactive ion etch steps.The step of the part of the upper surface of anisotropic etching first substrate comprises the formation depressed part in first substrate, and the degree of depth of depressed part is that about 5 μ m are to about 60 μ m.
According to one embodiment of the invention, wherein anisotropic etching comprises a reactive ion etch steps.
According to another embodiment of the present invention, wherein anisotropic etching comprises a reactive ion etch steps and a dark formula reactive ion etch steps.
According to further embodiment of this invention, after step (f), also comprise the following step: (g) form the 3rd substrate under first substrate; (h) form connecting hole, to run through the 3rd substrate, macromolecular material and circuit layer, to expose connection gasket through connecting hole; (i) form conductive layer on the sidewall of connecting hole, to be connected with connection gasket; And (j) form the bonding conductor projection on conductive layer.Wherein connection gasket is electrically connected at modular construction, so that modular construction is connected with external circuit through connection gasket, conductive layer and bonding conductor projection.Connection gasket also can be electrically connected at CMOS assembly and/or two-carrier CMOS assembly, so that CMOS assembly and/or two-carrier CMOS assembly are connected with external circuit through connection gasket, conductive layer and bonding conductor projection.
Application the invention has the advantages that the manufacturing approach through integrated photosensitive structure, can in same technology, accomplish dissimilar assembly in the photosensitive structure, and reach above-mentioned purpose easily.
Description of drawings
For letting above and other objects of the present invention, characteristic, advantage and the embodiment can be more obviously understandable, the explanation of appended accompanying drawing be following:
Figure 1A and Figure 1B are in one embodiment of the invention, the flow chart of the manufacturing approach of photosensitive structure;
Fig. 2 A to Fig. 2 J is in the manufacturing approach among Figure 1A and Figure 1B, the generalized section of each operation stage;
Fig. 2 K is in another embodiment of the present invention, is formed with the sketch map of the photosensitive structure of suspension structure;
Fig. 3 is in another embodiment of the present invention, the flow chart of the manufacturing approach of photosensitive structure; And
Fig. 4 A to Fig. 4 C is in the manufacturing approach of Fig. 3, the generalized section of each operation stage.
[primary clustering symbol description]
101-109: step 200: circuit layer
201: metal level 202: modular construction
203: connection gasket 204: the release characteristic structure
204a: contact 205: dielectric material
206: 207: the first filter layers of dielectric materials layer
208: CMOS assembly 209: lower surface
214a-214d: optical sensing subassembly 216: lower surface
230: protective layer 232: protective layer
240: 250: the second substrates of depressed part
252: 254: the second filter layers of adhesion coating
260: hole 262: sidewall
264: macromolecular material 301-304: step
404: conductive layer 406: lower surface
408: the bonding conductor projection
Embodiment
Please be simultaneously with reference to Figure 1A and Fig. 2 A to Fig. 2 J.Figure 1A is in one embodiment of the invention, the flow chart of the manufacturing approach of photosensitive structure.Fig. 2 A to Fig. 2 J is in one embodiment of the invention, the generalized section of each operation stage.The manufacturing approach of photosensitive structure comprise the following steps (should be appreciated that mentioned step in this execution mode except that chatting bright its order person especially, all can be adjusted order before and after it according to actual needs, in addition can be simultaneously or part carry out simultaneously.)
Carry out step 101, form circuit layer 200 in the upper surface of first substrate 210.Please with reference to Fig. 2 A, circuit layer 200 is formed at the upper surface 212 of first substrate 210.In one embodiment, first substrate 210 can be silicon wafer, and comprises optical sensing subassembly 214a, 214b, 214c and 214d.Circuit layer 200 comprises modular construction 202, release characteristic structure 204 and dielectric materials layer 206.Release characteristic structure 204 is made by metal material.In fact, also can comprise dielectric layer material in the metal material, when follow-up wet etching, can this dielectric layer material be removed simultaneously.Release characteristic structure 204 can be formed on the optical sensing subassembly and modular construction 202 of part.
In the present embodiment, release characteristic structure 204 is formed at optical sensing subassembly 214a, 214d is last, and centers on the part of the periphery of modular construction 202, to run through circuit layer 200.Wherein, be formed at release characteristic structure 204 on the optical sensing subassembly 214a and run through the darker degree of depth of circuit layer 200, to be formed at optical sensing subassembly 214a one more short-range top.Be formed at release characteristic structure 204 on the optical sensing subassembly 214d and then only run through the more shallow degree of depth of circuit layer 200 1, and have long distance between optical sensing subassembly 214d, and the interior circuit layer 200 of this distance also includes the metal level 201 of shape.
In one embodiment, the step of formation circuit layer 200 comprises formation one CMOS (CMOS) assembly 208.In the standard technology of known CMOS assembly 208, can comprise the multi-crystal silicification technology (2P4M technology) in the metallization process and 2 roads in 4 roads, also can comprise the multi-crystal silicification technology (1P5M technology) in the metallization process and 1 road in 5 roads.Therefore, in one embodiment, in the process that forms CMOS assembly 208,, form release characteristic structure 204 simultaneously through the light shield of suitable design.Below only with assemblies such as CMOSs for illustrating; Be not in order to restriction the present invention; Other is two-carrier CMOS assemblies such as (BiCMOS) for example; Or the technology of other type and structure are not limited to CMOS or the technology and the structure of two-carrier CMOS also applicable to the present invention.In addition, the present invention also is not limited to 2P4M technology or 1P5M technology, and other technology mode is also applicable to the present invention.For example, when forming the through hole of CMOS assembly 208, can remove the dielectric material that is preset as release characteristic structure 204 positions in the dielectric layer simultaneously.Then, when forming the metal level of CMOS assembly 208, can fill metal material to above-mentioned predeterminated position simultaneously.Therefore, can when forming CMOS assembly 208, progressively form release characteristic structure 204.In another embodiment, the metal level that forms CMOS assembly 208 is an aluminium, and the metal that is filled in through hole in the CMOS assembly 208 is a tungsten.Therefore, can form the release characteristic structure 204 that constitutes by aluminium and tungsten.In another embodiment, comprise connection gasket 203 at circuit layer 200.Connection gasket 203 is that metal is made, and electrically connects CMOS assembly 208.
In one embodiment, in the process that forms CMOS assembly 208, form modular construction 202 simultaneously.In the present embodiment, modular construction 202 is positioned on the optical sensing subassembly 214c.In other embodiments, modular construction 202 can not need be formed at the optical sensing subassembly top, and can independently be formed in the circuit layer 200.The part-structure of modular construction 202 can form in the process that forms CMOS assembly 208 simultaneously, and other also can form in the process that forms CMOS assembly 208 such as the electrical metal connection in the micro-structural.Therefore, the part-structure of modular construction 202 can comprise the metal level (for example aluminium and/or tungsten) identical with CMOS assembly 208.And, after the metal level between part-structure can electrically connect mutually, be connected to again in circuit layer 200 semiconductor circuits.
In the present embodiment, can learn that circuit layer 200 comprises M1, M2, M3 and four metal levels of M4 and contact (contact), V1, V2, three through holes of V3 (via) by Fig. 2 A.Wherein, there are metal level 201, modular construction 202, connection gasket 203, release characteristic structure 204 and the CMOS assembly 208 of shape respectively to have part-structure and correspond to the metal level of above-mentioned M1-M4 and the through hole of V1-V3.For instance, CMOS assembly 208 corresponds to the metal level of M1-M3 and the through hole of V1-V2.204 on release characteristic structure around the modular construction 202 has contact 204a and first substrate 210 joins.
In another embodiment, shown in Fig. 2 A, modular construction 202 comprises the dielectric material 205 (for example silica and/or silicon nitride) identical with CMOS assembly 208, and 205 outer surfaces at modular construction 202 of dielectric material.The thickness of dielectric material 205 can be about 0.1 micron to about 3 microns, for example is about 1 micron, 2 microns or 3 microns.
In one embodiment, the step that forms circuit layer 200 also comprises and forms protective layer 230 simultaneously on circuit layer 200.Shown in Fig. 2 A, protective layer 230 is formed at circuit layer 200 tops.In one embodiment, protective layer 230 can cover connection gasket 203.But protective layer 230 does not cover release characteristic structure 204.In other words, release characteristic structure 204 is to be exposed to external environment, so that carry out subsequent step.
In one embodiment, protective layer 230 can be for example silicon oxide layer or silicon nitride layer, or protective layer 230 can be the sandwich construction that comprises silica and silicon nitride.The chemical vapour deposition technique of protective layer 230 conventions capable of using or other technology form.
In step 102, cover first filter layer 207 on the subregion of circuit layer 200.Shown in Fig. 2 B; In the present embodiment; First filter layer 207 forms and is covered on the protective layer 230 on the circuit layer 200 of corresponding optical sensing subassembly 214b, and forms and be covered on corresponding modular construction 202 circuit layer 200 of (comprising optical sensing subassembly 214c).First filter layer 207 can provide the function of an optical filtering; Make light the time through first filter layer 207; The optical sensing subassembly 214b that it covered, modular construction 202 and optical sensing subassembly 214c only have the light of subband to pass through, so that can carry out particular functionality to the light of these wave bands.Be noted that, in different zones, can form first filter layer 207 in response to its below different demands that pairing assembly has with different light-filtering characteristics.For instance, first filter layer 207 that is formed on the optical sensing subassembly 214b can be in order to filtering only allowing green glow to pass through, and first filter layer 207 that is formed on the modular construction 202 can be in order to filter only to allow ruddiness to pass through.
In one embodiment; When forming first filter layer 207, can form resistant layer 232 simultaneously, except that the top that circuit layer 200 can be provided further protection and against corrosion; Also can when the material of first filter layer 207 is not had corrosion stability, the effect of first filter layer, 207 protections be provided.Resistant layer 232 can be identical material with protective layer 230 in fact, like oxide layer (oxide).And in another embodiment, when the material of first filter layer 207 itself is the tool corrosion stability, can not need to form resistant layer 232 above that.
In step 103, remove release characteristic structure 204 through wet etching process, to expose first substrate 210.Shown in Fig. 2 C, the release characteristic structure 204 among Fig. 2 B is removed through wet etching process.In the present embodiment; The release characteristic structure 204 of optical sensing subassembly 214a and optical sensing subassembly 214d top is formed on optical sensing subassembly 214a and the optical sensing subassembly 214d and penetrates the degree of depth of a correspondence of circuit layer 200; Therefore after removing release characteristic structure 204, expose the part of circuit layer 200 corresponding these degree of depth through wet etching process.
And, then after removing, expose first substrate 210 in the release characteristic structure 204 of modular construction 202 periphery.After removing release characteristic structure 204, formation one gap d between other part of modular construction 202 itself and modular construction 202 and circuit layer 200.In one embodiment, the width of gap d is about 1 micron to about 4 microns, for example can be 2 microns or 3 microns.In step 104, the etchant that is adopted has high etching selectivity for metal material and oxide material (or nitride), for example is higher than 15: 1 or is higher than 20: 1, for example can be about 30: 1 or higher.Therefore, when removing release characteristic structure 204, can obtain preferable side wall profile.In one embodiment, release characteristic structure 204 is constituted by aluminium and tungsten, and protective layer 230 is a silicon oxide layer.Wet etching process use one comprises the etchant of sulfuric acid and hydrogen peroxide.In a specific embodiment, the weight ratio of sulfuric acid and hydrogen peroxide is about 2: 1, when the metal material of etching release characteristic structure 204, can obtain satisfied side wall profile.
In known technology, adopt reactive ion etching (reactive ion etching usually; RIE) remove dielectric material (such as silica or silicon nitride) in the circuit layer.But be to use reactive ion etching, formed etching side wall profile is unsatisfactory.And, the required apparatus expensive that gets of reactive ion etching.Therefore, according to one embodiment of the invention, be insert metal material in advance in the zone of desiring to remove, form release characteristic structure 204.And then utilize wet etching that release characteristic structure 204 is removed.Have the etchant of high etching selectivity through use, can reach better etching side wall profile (compared to reactive ion etching).Moreover release characteristic structure 204 can form when forming circuit layer 200, need not additional technique.So the present invention has the advantage of low technology cost, and can reach better etching outline.
In step 104, the part of first substrate 210 that anisotropic etching exposes.Shown in Fig. 2 E (narration of the part of Fig. 2 D), remove the part of first substrate 210 that in step 103, exposes through anisotropic etching in the back.In one embodiment, anisotropic etching comprises a dark formula reactive ion etching (Deep Ion reactive Etching; DRIE) step.In another embodiment, the step of anisotropic etching first substrate 210 comprises and forms a depressed part 240 in first substrate 210, and the degree of depth of depressed part 240 is about 10 microns to about 60 microns, for example is about 20 microns, 30 microns, 40 microns or 50 microns.In the anisotropic etching process; Protective layer 230 (for example silica or silicon nitride etc.) can be protected the metal level (the for example metal level in connection gasket 203 and the circuit layer 200) or first filter layer 207 under it, avoids in the anisotropic etching process, destroying the due electrical or function of first filter layer 207 of metal level.
Step 103 remove release characteristic structure 204 after, in some cases, the upper surface of first substrate 210 that is exposed (being the position of gap d) possibly form oxide, for example silica.Therefore, in an embodiment, before carry out step 104, but non-essential ground carries out a RIE technology, to form the structure of Fig. 2 D earlier, carries out the structure that aforesaid dark formula reactive ion etching forms Fig. 2 E again.Through RIE technology, first substrate, the 210 lip-deep oxides in the gap d can be removed, and part will further be that RIE etched ground is darker than among Fig. 2 C owing to removing the groove that release characteristic structure 204 is exposed.
Then please with reference to Figure 1B.Figure 1B is the flow chart after the A point that the step of manufacturing 104 of photosensitive structure of Figure 1A connected of continuing.
In the step 105 after the step 104, dispose one second substrate 250 in circuit layer 200 tops.Shown in Fig. 2 F, configuration second substrate 250 above circuit layer 200.Second substrate 250 can cover the top of modular construction 202, with protection modular construction 202, and avoids particulate to fall to depressed part 240.In one embodiment, second substrate 250 can for example be a glass substrate or a silicon substrate, and the thickness of glass substrate or silicon substrate is about 50 microns to about 500 microns, for example is 100 microns, 200,300 microns or 400 microns.In another embodiment, configuration adhesion coating 252 between second substrate 250 and the protective layer 230 is in order to fixing second substrate 250.In fact, adhesion coating 252 because Fig. 2 F is the sectional view of part, therefore only shows the adhesion coating 252 of a side around second substrate 250 and circuit layer 200.
In another embodiment, second substrate 250 in fact also comprises second filter layer 254.Shown in Fig. 2 F, in the present embodiment, second filter layer 254 is formed at the top of corresponding optical sensing subassembly 214a, 214b and 214d.Second filter layer 254 can be formed at the either side of second substrate 250, and can overlappingly be provided with.As first filter layer, 207, the second filter layers 254 function of optical filtering also can be provided, make light the time, only have the light of subband to pass through through second filter layer 254.Be coated with first filter layer, 207 parts, as optical sensing subassembly 214b also can be more corresponding top formation second filter layer 254, with the effect of strengthening filtering, or the light of extra other wave band of filtering again.As first filter layer 207, formed second filter layer 254 can have different light-filtering characteristics in response to different demands in the corresponding zones of different.
After step 105, but step 106 carry out in non-essential ground.In step 106, grind the lower surface 216 of first substrate 210, to reduce the thickness of first substrate 210, shown in Fig. 2 G.Thickness after for example first substrate 210 grinds can be about 50 microns to 300 microns of microns.
In step 107, form a hole 260 in the lower surface of first substrate 210, to expose the circuit layer 200 that is positioned at connection gasket 203 belows, shown in Fig. 2 H.The method that forms hole 260 at first substrate 210 can be dry ecthing method, wet etch method, machine drilling or laser drill.In one embodiment, hole 260 has an angled side walls 262.Sidewall 262 forms an angle theta greater than 90 degree with the lower surface 209 of circuit layer 200, for example can be about 100 degree, 110 degree, 120 degree, 140 degree or 150 degree.
In step 108, fill a macromolecular material in hole, shown in Fig. 2 I.Macromolecular material 264 is filled in the hole 260.In one embodiment, macromolecular material 264 can be epoxy resin (epoxy).Macromolecular material 264 surfaces of being filled in another embodiment, are substantially flush with the lower surface 216 of first substrate 210.
In step 109, remove the part of a lower surface 216 of first substrate 210, with releasing unit structure 202.In the present embodiment, modular construction 202 can be through the auxiliary micro photo-electro-mechanical structure that becomes of optical sensing subassembly 214c.And in another embodiment, the following optical sensing subassembly 214c that can not be provided with of modular construction 202, and be merely a micro electromechanical structure." releasing unit structure " is to instigate above-mentioned micro electromechanical structure or micro photo-electro-mechanical structure to produce to have relatively-movable structure or parts.In one embodiment, utilize anisotropic etching to remove the part of the lower surface 216 of first substrate 210, with " release micro electromechanical structure ", shown in Fig. 2 J.In another embodiment, remove the part of first substrate 210 that is positioned at depressed part 240 and modular construction 202 belows, make modular construction 202 produce displacements with respect to first substrate 210 or second substrate 250 through DRIE technology.In another embodiment, modular construction 202 can be connected in other part of circuit layer 200 through the structure like elastic supporting member for supporting optical member (not illustrating).Therefore, when modular construction 202 receives external force, can produce small relative displacement.
Be noted that, in one embodiment, when forming circuit layer 200, also can form the optical sensing subassembly structure 202 that is merely a suspension structure, and do not have metal level with the optical sensing subassembly superstructure and cover, shown in Fig. 2 K.
The manufacturing approach of above-mentioned photosensitive structure can form different assembly in the photosensitive structure in same technology, and can pass through the release characteristic structure, makes the assembly in the photosensitive structure have preferable side wall profile.Further, the setting of second substrate through comprising second filter layer not only can reach and prevents assembly by the effect of particle contamination, but more outside first filter layer on the accentuator layer, better filter effect.
In other embodiments,, to step 109, can continue and carry out step 301 to step 304 at completing steps 101.See also Fig. 3, it illustrates at the manufacturing flow chart of completing steps 101 to step 109.Fig. 4 A to Fig. 4 C is the generalized section that illustrates each operation stage in above-mentioned steps 301 to the step 304.
In step 301, dispose one the 3rd substrate 400 in first substrate, 210 belows, shown in Fig. 4 A.In one embodiment, the 3rd substrate 400 can be a same material with second substrate 250, for example silicon substrate or glass substrate.Second substrate 250 and the 3rd substrate 400 form the enclosure space of an encirclement modular construction 202.Therefore, second substrate 250 and the 3rd substrate 400 can be protected modular construction 202 to avoid being undermined and prevent that particulate from getting into, and guarantee modular construction 202 normal operations.
In step 302, form connecting hole 402 by a side of the 3rd substrate 400, shown in Fig. 4 B.Connecting hole 402 roughly is positioned at filled high polymer material 264 parts, and runs through the 3rd substrate 400, macromolecular material 264 and circuit layer 200 and expose connection gasket 203.The method that forms connecting hole 402 can be machine drilling or Laser drill etc.In one embodiment, connection gasket 203 electrically connects CMOS assembly 208.In another embodiment, connection gasket 203 electrically connects modular construction 202.
In the step 303, form conductive layer 404 in connecting hole 402, shown in Fig. 4 C.Conductive layer 404 is connected with connection gasket 203, gets into the Circuits System in the circuit layer 200 in order to input or output electronic signal.General known sputtering process capable of using forms conductive layer 404, and the material of conductive layer 404 can for example be copper, aluminium, silver or tungsten.In one embodiment, conductive layer 404 is extended to the lower surface 406 of the 3rd substrate 400 by connecting hole 402.
In the step 304, form bonding conductor projection 408 on conductive layer 404.Please again referring to Fig. 4 C, in one embodiment, bonding conductor projection 408 is formed on the conductive layer 404 that is positioned on the 3rd substrate 400, so electronic signal can input or output modular construction 202 via bonding conductor projection 408.In one embodiment, electronic signal also can input or output other assembly in the circuit layer 200 via bonding conductor projection 408, like CMOS assembly 208 and/or two-carrier CMOS assembly etc.Can use any known method to form bonding conductor projection 408, for example wire mark technology or cloth are planted tin ball mode etc.Modular construction 202 can be connected to other external circuit (not illustrating) via bonding conductor projection 408.Completing steps 304 is promptly accomplished the micro electromechanical structure encapsulation of wafer level.
In the present embodiment; The manufacturing approach of photosensitive structure further in same technology the setting through the 3rd substrate reach the assembly that prevents in the photosensitive structure by the effect of particle contamination; And can make assembly pass through the micro electromechanical structure encapsulation of wafer level, can electrically connect and link up with external circuit.
Though the present invention discloses as above with execution mode; Right its is not in order to limit the present invention; Anyly be familiar with this art; Do not breaking away from the spirit and scope of the present invention, when can doing various changes and retouching, so protection scope of the present invention is as the criterion when looking the scope that appending claims defines.
Claims (15)
1. the manufacturing approach of a photosensitive structure is characterized in that, comprises the following step:
(a) form a circuit layer in a upper surface of one first substrate; Wherein this first substrate comprises at least one optical sensing subassembly; This circuit layer comprises at least one modular construction; And at least one release characteristic structure, and this release characteristic structure forms by a metal material, and be formed on this optical sensing subassembly partly and this modular construction;
(b) cover one first filter layer on the subregion of this circuit layer; And
(c) remove this release characteristic structure through a wet etching process.
2. the manufacturing approach of photosensitive structure according to claim 1; It is characterized in that; The step that forms this circuit layer comprises and forms a CMOS assembly and/or a pair of BiCMOS thing semiconductor subassembly, and comprises when forming this CMOS assembly and/or this two-carrier CMOS assembly and form this release characteristic structure.
3. the manufacturing approach of photosensitive structure according to claim 1; It is characterized in that; Also comprise formation one protective layer on this circuit layer in step (a); Wherein this protective layer does not cover this release characteristic structure, and forms a resistant layer on this first filter layer and on this protective layer preceding also comprising in step (c).
4. the manufacturing approach of photosensitive structure according to claim 1; It is characterized in that; Also comprising configuration one second substrate after the step (c) on this circuit layer top and this first filter layer; Wherein this second substrate is a glass substrate or a silicon substrate, and to have be the thickness of 50 μ m to 500 μ m.
5. the manufacturing approach of photosensitive structure according to claim 4 is characterized in that, this second substrate comprises one second filter layer, on the subregion that places this circuit layer and this first filter layer.
6. the manufacturing approach of photosensitive structure according to claim 1; It is characterized in that this release characteristic structure is formed on this modular construction and centers on peripheral part of this modular construction, to run through this circuit layer; After removing this release characteristic structure, also comprise through this wet etching process:
Expose this upper surface of this first substrate; And
The part of this upper surface of this first substrate of anisotropic etching.
7. the manufacturing approach of photosensitive structure according to claim 6 is characterized in that, this circuit layer also comprises a connection gasket, and this modular construction is a micro electromechanical structure, after step (c), also comprises the following step:
(d) form a hole in this lower surface of this first substrate, to expose this circuit layer corresponding to this connection gasket below;
(e) fill a macromolecular material in this hole; And
(f) remove this first substrate corresponding to the part under this micro electromechanical structure, to discharge this micro electromechanical structure.
8. the manufacturing approach of photosensitive structure according to claim 7 is characterized in that, in the preceding step that also comprises of step (d):
Grind this lower surface of this first substrate, to reduce the thickness of this first substrate.
9. the manufacturing approach of photosensitive structure according to claim 1; It is characterized in that; This release characteristic structure is formed on this modular construction or this optical sensing subassembly and penetrates a degree of depth of this circuit layer, after removing this release characteristic structure through this wet etching process, also comprises:
Expose this circuit layer to the open air to part that should the degree of depth.
10. the manufacturing approach of photosensitive structure according to claim 7 is characterized in that, this modular construction is a micro photo-electro-mechanical structure.
11. the manufacturing approach of photosensitive structure according to claim 6 is characterized in that, this anisotropic etching comprises a dark formula reactive ion etch steps and/or a dark formula reactive ion etch steps.
12. the manufacturing approach of photosensitive structure according to claim 6; It is characterized in that; The step of this part of this upper surface of this first substrate of this anisotropic etching comprise formation one depressed part in this first substrate, and the degree of depth of this depressed part is 5 μ m to 60 μ m.
13. the manufacturing approach of photosensitive structure according to claim 7 is characterized in that, after step (f), also comprises the following step:
(g) form one the 3rd substrate under this first substrate;
(h) form a connecting hole, to run through the 3rd substrate, this macromolecular material and this circuit layer, to expose this connection gasket through this connecting hole;
(i) form a conductive layer on a sidewall of this connecting hole, to be connected with this connection gasket; And
(j) form a bonding conductor projection on this conductive layer.
14. the manufacturing approach of photosensitive structure according to claim 13 is characterized in that, this connection gasket is electrically connected at this modular construction, so that this modular construction is connected with an external circuit through this connection gasket, this conductive layer and this bonding conductor projection.
15. the manufacturing approach of photosensitive structure according to claim 13; It is characterized in that; The step that forms this circuit layer comprises formation one CMOS assembly and/or a pair of BiCMOS thing semiconductor subassembly; This connection gasket is electrically connected at this CMOS assembly and/or this two-carrier CMOS assembly, so that this CMOS assembly and/or this two-carrier CMOS assembly are connected with an external circuit through this connection gasket, this conductive layer and this bonding conductor projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010299874.3A CN102420234B (en) | 2010-09-28 | 2010-09-28 | Manufacturing method of photosensitive structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010299874.3A CN102420234B (en) | 2010-09-28 | 2010-09-28 | Manufacturing method of photosensitive structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102420234A true CN102420234A (en) | 2012-04-18 |
| CN102420234B CN102420234B (en) | 2015-04-08 |
Family
ID=45944552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010299874.3A Expired - Fee Related CN102420234B (en) | 2010-09-28 | 2010-09-28 | Manufacturing method of photosensitive structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102420234B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030001222A1 (en) * | 2001-07-02 | 2003-01-02 | Xerox Corporation | Low data line capacitance image sensor array using air-gap metal crossover |
| CN1870281A (en) * | 2005-05-27 | 2006-11-29 | 台湾积体电路制造股份有限公司 | Photosensitive measuring integrated circuit element |
| CN101312161A (en) * | 2007-05-21 | 2008-11-26 | 国际商业机器公司 | Electronic structure and manufacturing method |
| CN101468784A (en) * | 2007-12-25 | 2009-07-01 | 微智半导体股份有限公司 | Semiconductor miniature suspension structure and method of producing the same |
| CN101630657A (en) * | 2008-07-15 | 2010-01-20 | 台湾积体电路制造股份有限公司 | Integrated circuit chip and manufacturing method for integrated circuit device |
-
2010
- 2010-09-28 CN CN201010299874.3A patent/CN102420234B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030001222A1 (en) * | 2001-07-02 | 2003-01-02 | Xerox Corporation | Low data line capacitance image sensor array using air-gap metal crossover |
| CN1870281A (en) * | 2005-05-27 | 2006-11-29 | 台湾积体电路制造股份有限公司 | Photosensitive measuring integrated circuit element |
| CN101312161A (en) * | 2007-05-21 | 2008-11-26 | 国际商业机器公司 | Electronic structure and manufacturing method |
| CN101468784A (en) * | 2007-12-25 | 2009-07-01 | 微智半导体股份有限公司 | Semiconductor miniature suspension structure and method of producing the same |
| CN101630657A (en) * | 2008-07-15 | 2010-01-20 | 台湾积体电路制造股份有限公司 | Integrated circuit chip and manufacturing method for integrated circuit device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102420234B (en) | 2015-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6686642B2 (en) | Multi-level integrated circuit for wide-gap substrate bonding | |
| KR102151453B1 (en) | Micromechanical pressure sensor and corresponding production method | |
| EP1884994B1 (en) | Semiconductor device and method of manufacturing the same | |
| JP2009010323A (en) | Electronic device package and method for forming the same | |
| JP4688600B2 (en) | Manufacturing method of semiconductor sensor | |
| US8252695B2 (en) | Method for manufacturing a micro-electromechanical structure | |
| JP2014523815A (en) | Process for a sealed MEMS device comprising a portion exposed to the environment | |
| CN102751266B (en) | Chip packing-body and forming method thereof | |
| CN102685657A (en) | Component | |
| JP2015525344A (en) | Semiconductor package having air pressure sensor | |
| WO2014004009A1 (en) | Semiconductor package with mechanical fuse | |
| TWI770030B (en) | Method and system for mems devices with dual damascene formed electrodes | |
| CN103391501B (en) | MEMS microphone structure and preparation method thereof | |
| TW201307183A (en) | Metal thin shield on electrical device | |
| US8502382B2 (en) | MEMS and protection structure thereof | |
| US8129805B2 (en) | Microelectromechanical system (MEMS) device and methods for fabricating the same | |
| TWI419317B (en) | Manufacturing method for light-sensing structure | |
| CN102420234B (en) | Manufacturing method of photosensitive structure | |
| KR101459977B1 (en) | Wafer level package of mems senser and method for manufacturing the same | |
| CN113912001A (en) | Method and structure for on-glass sensor | |
| JP5331799B2 (en) | Manufacturing method and structure of metal wiring of multilayer substrate | |
| CN102234098B (en) | Manufacturing method of micro electromechanical structure | |
| CN104053082A (en) | Structure and Method for Integrated Microphone | |
| CN102145874A (en) | Micro-electro-mechanical device and manufacturing method thereof | |
| CN102082130B (en) | Semiconductor package piece and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150408 Termination date: 20150928 |
|
| EXPY | Termination of patent right or utility model |