CN102412137A - Plasma etching method for fabricating uniform fine patterns - Google Patents
Plasma etching method for fabricating uniform fine patterns Download PDFInfo
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- CN102412137A CN102412137A CN201110133611XA CN201110133611A CN102412137A CN 102412137 A CN102412137 A CN 102412137A CN 201110133611X A CN201110133611X A CN 201110133611XA CN 201110133611 A CN201110133611 A CN 201110133611A CN 102412137 A CN102412137 A CN 102412137A
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Abstract
The invention discloses a plasma etching method for fabricating uniform fine patterns, wherein the process for carrying out the semiconductor trimming process includes: step A: first gas is used as a plasma source to trim a hard mask layer; step B: a hard mask layer solidification process is carried out to keep a pattern stable, so that the pattern cannot be deformed; step C: second gas is used as the plasma source to trim the hard mask layer; and step D: third gas is used as the plasma source to trim the hard mask layer; and the first gas, the second gas and the third gas respectively have different microloading effects in order to reduce the difference between the characteristic dimensions of a dense region and an open region. By adopting the gases with the different microloading effects to carry out multiple times of trimming and adding the solidification process in the trimming step, the plasma etching method guarantees the stability of the patterns and minimizes the difference between the characteristic dimensions of the dense region and the open region, and thereby a uniform ultrafine structure is obtained.
Description
Technical field
The present invention relates to a kind of method for etching plasma, relate in particular to the uniform fine pattern method for etching plasma of a kind of making.
Background technology
In order to increase the running speed of electronic installation (for example transistor, capacitor etc.), in integrated microelectronic circuitry, the characteristic of those devices (feature) needs more and more littler.The minimum dimension of the characteristic of this device in convention, be called as usually critical size (critical dimension, CD).What critical size (CD) generally comprised is characterized as, for example the minimum widith of spacing between line, row, opening, line and the line etc.
Making one of this characteristic method comprises; Material layer below a mask; That is on the surface of the layer of below (underlying layer); Form a pattern mask, for example photoresistance mask (photoresist mask) uses pattern mask to come etched material layer as an etching mask then.
In general, above-mentioned pattern mask is to see through a little shadow processing to be made.One pattern (pattern) of this characteristic that is formed is transformed into photoresist layer with optical mode.Then, photoresistance is made public, and the part that photoresistance is not exposed then is removed, and then, remaining photoresistance then forms a pattern mask.
Along with the continuous progress of semiconductor fabrication, characteristic size is constantly reduced, and forms uniform hyperfine structure and has become a challenge, when especially being not enough to reach target size for photoetching technique resolving capability.For this reason, use plasma cutting (trimming) technology particularly to need.Reduce technology at present and be mainly a step cutting (trimming), this kind mode is weak point especially:
1, reduction size (trimming CD) scope is too little, general < 30nm;
2, characteristic size (CD) micro loading effect (microloading), promptly compact district (dense) and spacious district's (iso) characteristic size (CD) difference (Bias) are big;
3, cutting (trimming) overlong time causes pattern collapse.
Summary of the invention
The invention discloses the uniform fine pattern method for etching plasma of a kind of making, the cutting size range that available technology adopting one step cutting technology causes is little in order to solve, compact district and spacious district characteristic size difference is big and the cutting overlong time causes the problem of pattern collapse.
Above-mentioned purpose of the present invention realizes through following technical scheme:
The uniform fine pattern method for etching plasma of a kind of making, wherein, in the process of carrying out semiconductor cutting technology, steps A: use first gas to carry out the cutting of hard mask layer as plasma source; Step B: carry out the curing process of hard mask layer, stable to keep figure, can not be out of shape; Step C: use second gas to carry out the cutting of hard mask layer as plasma source; Step D: use the 3rd gas to carry out the cutting of hard mask layer as plasma source; Said first gas, said second gas, said the 3rd gas have different micro loading effects respectively, to reduce the difference between compact district and the spacious district characteristic size.The uniform fine pattern method for etching plasma of aforesaid making wherein, adopts the spaciousness district characteristic size behind said first gas etching less separately, adopts the spaciousness district characteristic size behind said second gas or the 3rd gas etching bigger separately.
The uniform fine pattern method for etching plasma of aforesaid making, wherein, said first gas is Cl2, O2, He mist.
The uniform fine pattern method for etching plasma of aforesaid making, wherein, said second gas is HBr, O2, He mist.
The uniform fine pattern method for etching plasma of aforesaid making, wherein, said the 3rd gas is CF4, CH2F2 mist.
The uniform fine pattern method for etching plasma of aforesaid making wherein, adopts the HBr plasma to be cured among the said step B.
The uniform fine pattern method for etching plasma of aforesaid making, wherein, the top power of the process using in the said steps A: 400-600W; Bottom power: 0W; Cl2:25-35sccm, O2:35-70sccm, He:70-100sccm; Pressure: 10-20mt, the process time: 15-25s.
The uniform fine pattern method for etching plasma of aforesaid making, wherein, the 1200-1500W that the curing process among the said step B adopts, bottom power: 0W, HBr:120-150sccm, pressure: 6-10mt, process time: 65-75s.
The uniform fine pattern method for etching plasma of aforesaid making, wherein, the top power of the process using among the said step C: 1000-1200W; Bottom power: 0W; HBr:100-150sccm, O2:30-70sccm, He:50-100sccm; Pressure: 10-20mt, the process time: 20-30s.
The uniform fine pattern method for etching plasma of aforesaid making, wherein, the top power of the process using among the said step D: 30-600W; Bottom power: 0W, CF4:70-100sccm, CH2F2:15-30sccm; Pressure: 10-20mt, the time: 15-30s.
The uniform fine pattern method for etching plasma of aforesaid making wherein, carries out the curing process second time after step C, carry out step D again.
In sum; Owing to adopted technique scheme; The present invention makes that uniform fine pattern method for etching plasma has solved that the cutting size range that available technology adopting asynchronous cutting technology causes is little, compact district and spacious district characteristic size difference is big and the cutting overlong time causes the problem of pattern collapse; The gas that has different micro loading effects through employing carries out repeatedly cutting, and in the step of cutting, increases the technology of solidifying, and has guaranteed the stability of pattern; The compact district and the difference of the characteristic size in spacious district are minimized, thereby realize uniform hyperfine structure.
Description of drawings
Fig. 1 is the flow chart that the present invention makes uniform fine pattern method for etching plasma;
Fig. 2 ~ Fig. 9 is the step sketch map that the present invention makes the embodiment one of uniform fine pattern method for etching plasma.
Embodiment
Be further described below in conjunction with the accompanying drawing specific embodiments of the invention:
The invention discloses the uniform fine pattern method for etching plasma of a kind of making; Wherein, Available technology adopting be mostly a step cutting technology; Owing to adopt any mist all can cause the compact district big,, thereby make that the compact district and the characteristic size difference in spacious district are reduced so the present invention adopts different mists to carry out the cutting of multistep with the feature difference in spacious district as plasma source.
Fig. 1 is the flow chart that the present invention makes uniform fine pattern method for etching plasma; See also Fig. 1; The concrete technological process that the present invention adopted does; In the process of carrying out semiconductor cutting technology, adopt steps A 201: use first gas to carry out the cutting of hard mask layer as plasma source; Step B202: carry out the curing process of hard mask layer, stable to keep figure, can not be out of shape, behind the completion curing process, carry out follow-up cutting technology, the situation that photoresist collapses can not appear, and the pattern that cuts out is meticulousr; Step C203: use second gas to carry out the cutting of hard mask layer as plasma source; Step D204: use the 3rd gas to carry out the cutting of hard mask layer as plasma source; Said first gas, said second gas, said the 3rd gas have different micro loading effects respectively; Also different for the compact district with the cutting effect in spacious district; Three kinds of above-mentioned gases are mist; Adopt three kinds of gas with various to carry out cutting, to reduce the difference between compact district and the spacious district characteristic size.
First gas that is adopted among the present invention, second gas, the 3rd gas have following characteristic respectively: adopt the spaciousness district characteristic size behind the said first gas etching hard mask layer less separately; Spaciousness district characteristic size behind said second gas of employing or the 3rd gas etching hard mask layer is bigger separately; So the characteristic size difference of carrying out producing after first cutting diminishes after second cutting and the 3rd cutting through carrying out, make feature difference between compact district and the spacious district.
Said first gas among the present invention is Cl2, O2, He mist; In steps A 201, adopt Cl2, O2, He mist cutting characteristic size to arrive to a certain degree; Wherein, Spaciousness district characteristic size after Cl2, O2, the He mist etching is less, the about 25nm of characteristic size minimizing value after the cutting.。
The top power of the process using in the said steps A 201 among the present invention: 400-600W, bottom power: 0W, Cl2:25-35sccm, O2:35-70sccm, He:70-100sccm, pressure: 10-20mt, process time: 15-25s.
Adopt the HBr plasma to be cured among the said step B202 among the present invention,, the situation of figure deformation can not occur to keep the stable of figure.
The 1200-1500W that curing process among the said step B202 among the present invention adopts, bottom power: 0W, HBr:120-150sccm, pressure: 6-10mt, process time: 65-75s.
Said second gas that is adopted among the step C203 of the present invention is HBr, O2, He mist, and wherein, second gas is main with HBr and O2; In step C203, adopt HBr, O2, He mist to carry out further cutting, opposite with the mist of being made up of Cl2, O2, He above-mentioned, the characteristic size in the spaciousness district after HBr, O2, the He mist etching is bigger; After this just made and accomplishes cutting for the second time, micro loading effect was reduced, and; Characteristic size minimizing value after the cutting,, can be found out after twice cutting technology by becoming 40nm by approximately; Micro loading effect reduces, and the pattern character size that is cut out is littler.
The top power of the process using among the said step C203 among the present invention: 1000-1200W, bottom power: 0W, HBr:100-150sccm, O2:30-70sccm, He:50-100sccm, pressure: 10-20mt, process time: 20-30s.
Further, if after accomplishing secondary cutting, still can cause the situation of figure deformation, can carry out the curing of the second time so for figure; Both after step C203, carried out the curing process second time earlier; Carry out step D204 again, adopt twice curing process to make the stability of figure promote greatly, accomplish follow-up cutting after; Figure still can be good maintenance, also further avoided the collapse appearance of situation of photoresist.
Said the 3rd gas that adopts among the step D204 of the present invention is CF4, CH2F2 mist; In step D204, adopt CF4, CH2F2 mist to carry out further cutting; The characteristic size of accomplishing after the cutting of this step further reduces, and the minimizing value is about 0-15nm, after cutting technology for the third time; Realized uniform hyperfine structure, the minimizing value amounts to can reach 55nm.
The top power of the process using among the said step D204 among the present invention: 30-600W, bottom power: 0W, CF:70-100sccm, CH2F2:15-30sccm, pressure: 10-20mt, time: 15-30s.
The technological parameter that is provided among the present invention uses as just a preferred embodiment, requires and situation according to different processes, and technological parameter is adjusted, and both parameter such as pressure, gas ratio in the above-mentioned steps is changed, to optimize the effect of etching.
Fig. 2 ~ Fig. 9 is the step sketch map that the present invention makes the embodiment one of uniform fine pattern method for etching plasma, wherein, has polysilicon or silicon layer 101; Silicon dioxide hard mask layer 102, ARC 103, photoresistance 104; See also Fig. 2; Fig. 2 is the sketch map of membrane structure, and we can find out from Fig. 2, and semiconductor has been accomplished the technology of lithographic definition pattern; See also Fig. 3, Fig. 3 is that ARC is carved the sketch map after 103 erosions are accomplished; See also Fig. 4, Fig. 4 is the sketch map after the technology of cutting for the first time; See also Fig. 5, Fig. 5 is the sketch map after the technology of cutting for the second time; See also Fig. 6, Fig. 6 is the sketch map after silicon dioxide hard mask layer 102 etchings; See also Fig. 7, Fig. 7 is the sketch map behind the organic matter removal; See also Fig. 8, Fig. 8 is the sketch map of the 3rd cutting technology; See also Fig. 9, Fig. 9 is the sketch map that the pattern after the cutting moves to subsurface material; Through eight processing steps of above-mentioned Fig. 2 ~ Fig. 9, and at the laggard capable curing process of cutting first time technology, the final graphical effect ideal that cuts out that makes, and realize uniform hyperfine structure.
In sum; Owing to adopted technique scheme; The present invention makes that uniform fine pattern method for etching plasma has solved that the cutting size range that available technology adopting asynchronous cutting technology causes is little, compact district and spacious district characteristic size difference is big and the cutting overlong time causes the problem of pattern collapse; The gas that has different micro loading effects through employing carries out repeatedly cutting, and in the step of cutting, increases the technology of solidifying, and has guaranteed the stability of pattern; The compact district and the difference of the characteristic size in spacious district are minimized, thereby realize uniform hyperfine structure.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (11)
1. make uniform fine pattern method for etching plasma for one kind, it is characterized in that, in the process of carrying out semiconductor cutting technology, steps A: use first gas to carry out the cutting of hard mask layer as plasma source; Step B: carry out the curing process of hard mask layer, stable to keep figure, can not be out of shape; Step C: use second gas to carry out the cutting of hard mask layer as plasma source; Step D: use the 3rd gas to carry out the cutting of hard mask layer as plasma source; Said first gas, said second gas, said the 3rd gas have different micro loading effects respectively, to reduce the difference between compact district and the spacious district characteristic size.
2. the uniform fine pattern method for etching plasma of making according to claim 1; It is characterized in that; Adopt separately the spaciousness district characteristic size behind said first gas etching less, adopt the spaciousness district characteristic size behind said second gas or the 3rd gas etching bigger separately.
3. the uniform fine pattern method for etching plasma of making according to claim 1 is characterized in that, said first gas is C12, O2, He mist.
4. the uniform fine pattern method for etching plasma of making according to claim 1 is characterized in that, said second gas is HBr, O2, He mist.
5. the uniform fine pattern method for etching plasma of making according to claim 1 is characterized in that, said the 3rd gas is CF4, CH2F2 mist.
6. the uniform fine pattern method for etching plasma of making according to claim 1 is characterized in that, adopts the HBr plasma to be cured among the said step B.
7. the uniform fine pattern method for etching plasma of making according to claim 3 is characterized in that, the top power of the process using in the said steps A: 400-600W; Bottom power: 0W; C12:25-35sccm, O2:35-70sccm, He:70-100sccm; Pressure: 10-20mt, the process time: 15-25s.
8. the uniform fine pattern method for etching plasma of making according to claim 6 is characterized in that, the 1200-1500W that the curing process among the said step B adopts; Bottom power: 0W; HBr:120-150sccm, pressure: 6-10mt, process time: 65-75s.
9. the uniform fine pattern method for etching plasma of making according to claim 4 is characterized in that, the top power of the process using among the said step C: 1000-1200W; Bottom power: 0W; HBr:100-150sccm, O2:30-70sccm, He:50-100sccm; Pressure: 10-20mt, the process time: 20-30s.
10. the uniform fine pattern method for etching plasma of making according to claim 5; It is characterized in that the top power of the process using among the said step D: 30-600W, bottom power: 0W; CF4:70-100sccm; CH2F2:15-30sccm, pressure: 10-20mt, time: 15-30s.
11. the uniform fine pattern method for etching plasma of making according to claim 1 is characterized in that, after step C, carries out the curing process second time earlier, carries out step D again.
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| CN201110133611XA CN102412137A (en) | 2011-05-23 | 2011-05-23 | Plasma etching method for fabricating uniform fine patterns |
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| CN201110133611XA CN102412137A (en) | 2011-05-23 | 2011-05-23 | Plasma etching method for fabricating uniform fine patterns |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579075A (en) * | 2012-07-24 | 2014-02-12 | 上海宏力半导体制造有限公司 | Semiconductor structure for controlling feature sizes with plasma and manufacturing method thereof |
Citations (5)
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|---|---|---|---|---|
| US6368982B1 (en) * | 2000-11-15 | 2002-04-09 | Advanced Micro Devices, Inc. | Pattern reduction by trimming a plurality of layers of different handmask materials |
| US20030219683A1 (en) * | 2002-05-23 | 2003-11-27 | Institute Of Microelectronics. | Low temperature resist trimming process |
| US20040198065A1 (en) * | 2003-04-04 | 2004-10-07 | Sung-Kwon Lee | Method for fabricating semiconductor device with fine patterns |
| CN1577766A (en) * | 2003-07-09 | 2005-02-09 | 富士通株式会社 | Semiconductor device manufacture method and etching system |
| US7122455B1 (en) * | 2004-03-01 | 2006-10-17 | Advanced Micro Devices, Inc. | Patterning with rigid organic under-layer |
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2011
- 2011-05-23 CN CN201110133611XA patent/CN102412137A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368982B1 (en) * | 2000-11-15 | 2002-04-09 | Advanced Micro Devices, Inc. | Pattern reduction by trimming a plurality of layers of different handmask materials |
| US20030219683A1 (en) * | 2002-05-23 | 2003-11-27 | Institute Of Microelectronics. | Low temperature resist trimming process |
| US20040198065A1 (en) * | 2003-04-04 | 2004-10-07 | Sung-Kwon Lee | Method for fabricating semiconductor device with fine patterns |
| CN1577766A (en) * | 2003-07-09 | 2005-02-09 | 富士通株式会社 | Semiconductor device manufacture method and etching system |
| US7122455B1 (en) * | 2004-03-01 | 2006-10-17 | Advanced Micro Devices, Inc. | Patterning with rigid organic under-layer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579075A (en) * | 2012-07-24 | 2014-02-12 | 上海宏力半导体制造有限公司 | Semiconductor structure for controlling feature sizes with plasma and manufacturing method thereof |
| CN103579075B (en) * | 2012-07-24 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | Utilize semiconductor structure and the manufacture method thereof of plasma controlling feature size |
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Application publication date: 20120411 |