CN102411080B - Optical electric field sensor - Google Patents
Optical electric field sensor Download PDFInfo
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- CN102411080B CN102411080B CN 201110376588 CN201110376588A CN102411080B CN 102411080 B CN102411080 B CN 102411080B CN 201110376588 CN201110376588 CN 201110376588 CN 201110376588 A CN201110376588 A CN 201110376588A CN 102411080 B CN102411080 B CN 102411080B
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Abstract
The invention discloses a passive optical electric field sensor for measuring electric fields or high voltages, belonging to the technical field of electric measurement. The passive optical electric field sensor comprises two optical crystals, wherein one of the optical crystals is positioned in the environments of a tested electric field as well as interference fields such as temperature, vibration and the like, and the other optical crystal is only positioned in the environments of interference fields such as the same temperature, vibration and the like; and after polarized light is emitted by the two crystals, modulation of interference fields such as temperature, vibration and the like is eliminated. A signal which is proportional to the tested electric field or a high voltage is output though a signal processing circuit, and is not influenced by interference factors such as temperature, vibration and the like. The optical electric field sensor disclosed by the invention can be used for measuring electric fields or high voltages, is particularly used for detecting electric fields in the power industry, monitoring electric fields or high voltages of buses, has high stability, and is not influenced by temperature or stress easily.
Description
Technical field
The invention belongs to the Electrical Measurement Technology field, be specifically related to a kind of for measuring the passive optical electric-field sensor of electric field or voltage, this sensor especially is suitable for measuring the space highfield of electric system or the high voltage on power bus-bar, more general optical electric field sensor stability is high, than the traditional sensors bandwidth.
Background technology
Electric field measurement is significant in many scientific researches and field of engineering technology, particularly in fields such as electric system, electromagnetic compatibility and microwave technologies, has widespread use.For example, in power industry, electric field measurement can be used for POWER SYSTEM STATE monitoring, electrical equipment inner electric field and outer electric field distribution measuring, high-voltage test and corona discharge phenomenal research, the high-tension measurement of electrical system bus etc.; In the electromagnetic compatibility area research, that electric field measurement can be used for detecting is electric, the external electromagnetic radiation of electronic equipment and interference and research environment electric field be on the impact of electronic device operation; In microwave technology, need to be measured microwave emission and electric field around receiving equipment.Optical electric field sensor, based on the optical sensing principle, consists of devices such as optical glass, and volume is little, to tested electric field undisturbed almost.
Optical electric field sensor based on the linear electro-optic effect principle has been used to Electric Field Distribution and the high-tension measurement of electrical system bus, but the stability of sensor is subject to environment temperature, the impact of the factors such as vibration, a kind of typical scenario of improving its stability adopts reflective bifocal path structure exactly, in scheme, utilize the linear electro-optic effect of an optical crystal to carry out the tested electric field of sensing, when by temperature, the interference birefringence that the factors such as vibration cause is during much smaller than the birefringence that produced by electric field, utilize the output of two light paths to do the impact that disturbing factor is processed in computing, but according to actual measurement and operation result, the stability of its long-time running is still failed efficient solution certainly.
Summary of the invention
The object of the present invention is to provide a kind of passive optical electric-field sensor, this sensor still can meet basic accuracy index request when the such environmental effects such as temperature change, existence vibration, can long-term stable work in actual motion.
A kind of passive optical electric-field sensor provided by the invention, it is characterized in that, it comprises incident optical, the first optical fiber collimator, the first Tp, the incident light polarizer, the first optical crystal, half-wave plate, the second Tp, the 3rd Tp, the second optical crystal, analyzer, the second optical fiber collimator, outgoing optical fiber and ground electrode;
The first optical crystal is in tested electric field E, and the second optical crystal is in ground electrode, and the electric field intensity of the second optical crystal environment of living in is zero;
Incident light incides the first Tp by incident optical through the first optical fiber collimator, by the first Tp, the incident light total internal reflection is changed the direct of travel of light, reenters after penetrating the polarizer and becomes linearly polarized light, linearly polarized light incident the first optical crystal;
Pass through successively half-wave plate, the second Tp and the 3rd Tp from the light of the first optical crystal outgoing, half-wave plate, the second Tp and the 3rd Tp change the direct of travel of light, change the direction of vibration of polarized lightwave simultaneously, incide again the second optical crystal, from the second optical crystal outgoing, then after the second optical fiber collimator by the outgoing of outgoing optical fiber.
Technique effect of the present invention is:
1. the first optical crystal is in tested electric field region, is subject to the modulation of the interference fields such as tested electric field and temperature, vibration simultaneously;
2. the second optical crystal, in earth potential one side, only is subject to the modulation of the interference fields such as temperature, vibration;
3. only contain the modulation signal of tested electric field in the output optical signal of sensor, eliminated temperature, vibration etc. and disturbed the impact on sensor;
4. the output of sensor only needs a light path, has simplified the manufacture craft of sensor, is more conducive to batch production.
Optical sensor sensor of the present invention adopts two optical crystals, can eliminate the impact of the interference fields such as temperature, vibration on stability structural design, without in signal is processed, doing correlative compensation, therefore, this optical electric field sensor can steady in a long-termly move, and is beneficial to batch production.
The accompanying drawing explanation
The structural representation that Fig. 1 is optical electric field sensor of the present invention;
Fig. 2 is the specific implementation figure that optical electric field sensor of the present invention is applied to the high voltage bus voltage transformer (VT).
Embodiment
Below by embodiment, the present invention is described in further detail, but following examples are only illustrative, protection scope of the present invention is not subject to the restriction of these embodiment.
As shown in Figure 1, a kind of passive optical electric-field sensor provided by the invention comprises incident optical 17, optical fiber collimator 15, Tp 9, the incident light polarizer 3, the first optical crystal 1, half-wave plate 4, Tp 5, Tp 6, the second optical crystal 2, analyzer 7, optical fiber collimator 16, outgoing optical fiber 18 and ground electrode 8.
The first optical crystal 1 is in tested electric field E, and the second optical crystal 2 is in ground electrode 8, and the electric field intensity of the second optical crystal 2 environment of living in is zero.
Light path between the first optical crystal 1 and the second optical crystal 2 realizes turning to of light path by half-wave plate 4, Tp 5 and Tp 6 successively, changes the direction of vibration of polarized lightwave simultaneously.
The first optical crystal 1 is subject to the modulation of the interference fields such as tested electric field and temperature, vibration simultaneously, and the second optical crystal 2 only is subject to the modulation of the interference fields such as temperature, vibration.Light beam by after the first optical crystal 1 and the second optical crystal 2, is cancelled out each other by the modulation of the interference fields such as temperature, vibration successively, and the modulating part of electric field is only arranged in the light beam of outgoing.
Incident light incides Tp 9 by incident optical 17 through optical fiber collimator 15, changed the direct of travel of light by 9 pairs of incident light total internal reflections of Tp, reenter after penetrating the polarizer 3 and become linearly polarized light, linearly polarized light incident the first optical crystal 1, be subject to the modulation of the interference fields such as extra electric field E and temperature, vibration, produce birefringence, the birefringence optics phase delay that the first optical crystal 1 produces is Δ
+ Δ δ, wherein Δ
for the phase delay that produced by extra electric field E modulation, Δ δ is the phase delay that produced by the interference fields such as temperature, vibration.Pass through successively half-wave plate 4 from the light of the first optical crystal 1 outgoing, Tp 5 and Tp 6, half-wave plate 4, Tp 5 and Tp 6 change the direct of travel of light, change the direction of vibration of polarized lightwave simultaneously, incident the second optical crystal 2 again, the second optical crystal 2 is in the earth potential side, be not subject to the impact of extra electric field, but owing to the first optical crystal 1, being in same temperature, in the environment such as vibration, the second optical crystal 2 is due to temperature, the birefringence light beam phase delay that the environmental interference such as vibration produce is-Δ δ, the optical phase put-off of the whole light path from the second optical crystal 2 outgoing is the phase delay sum that the first optical crystal 1 and the second optical crystal 2 produce, for
through analyzer 7, from optical fiber collimator 16 outgoing, eliminated the item of the interference fields such as temperature, stress in light signal, only retained the phase delay item that tested electric field E modulation produces.
Example: as shown in Figure 2, in the time of in the middle of optical electric field sensor S of the present invention is installed on high-tension insulator 12, high voltage UX on bus 11 is applied on optical electric field sensor by high-voltage conductive rod 10, the electric field formed by high-field electrode 11 and ground electrode 8 produces optical modulation to the first optical crystal 1 of optical electric field sensor, the output optical signal of sensor, through optical cable 13 entering signal treatment circuits 14, can obtain the small voltage signal be directly proportional to tested bus high voltage UX.
The present invention not only is confined to above-mentioned embodiment; persons skilled in the art are according to content disclosed by the invention; can adopt other multiple embodiment to implement the present invention; therefore; every employing project organization of the present invention and thinking; do some simple designs that change or change, all fall into the scope of protection of the invention.
Claims (1)
1. a passive optical electric-field sensor, it is characterized in that, it comprises incident optical (17), the first optical fiber collimator (15), the first Tp (9), the incident light polarizer (3), the first optical crystal (1), half-wave plate (4), the second Tp (5), the 3rd Tp (6), the second optical crystal (2), analyzer (7), the second optical fiber collimator (16), outgoing optical fiber (18) and ground electrode (8);
The first optical crystal (1) is in tested electric field E, and the second optical crystal (2) is in ground electrode (8), and the electric field intensity of the second optical crystal (2) environment of living in is zero;
Incident light incides the first Tp (9) by incident optical (17) through the first optical fiber collimator (15), by the first Tp (9), the incident light total internal reflection is changed the direct of travel of light, reenter after penetrating the polarizer (3) and become linearly polarized light, linearly polarized light incident the first optical crystal (1);
Pass through successively half-wave plate (4), the second Tp (5) and the 3rd Tp (6) from the light of the first optical crystal (1) outgoing, half-wave plate (4), the second Tp (5) and the 3rd Tp (6) change the direct of travel of light, change the direction of vibration of polarized lightwave simultaneously, incide again the second optical crystal (2), from the second optical crystal (2) outgoing, then after the second optical fiber collimator (16) by outgoing optical fiber (18) outgoing.
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CN 201110376588 CN102411080B (en) | 2011-11-23 | 2011-11-23 | Optical electric field sensor |
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CN102411080B true CN102411080B (en) | 2013-05-22 |
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CN103308783B (en) * | 2013-05-23 | 2015-12-09 | 国家电网公司 | Based on the optical crystal electric-field sensor of Distributed Feedback Laser |
CN104020360B (en) * | 2014-06-27 | 2016-08-31 | 上海交通大学 | High voltage electric field accurate measurement method based on stent-type fiber grating and device |
CN105116196B (en) * | 2015-07-22 | 2018-09-21 | 华中科技大学 | A kind of feedback zero differential optical voltage sensor |
CN109030904B (en) * | 2018-07-13 | 2020-08-11 | 福州大学 | Temperature self-compensation method for longitudinal modulation optical voltage transformer |
CN114720782A (en) * | 2022-03-10 | 2022-07-08 | 云南电网有限责任公司电力科学研究院 | Packaging device and electro-optical sensor |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000235049A (en) * | 1998-12-18 | 2000-08-29 | Nissin Electric Co Ltd | Photovoltage/electric field sensor |
CN101285855A (en) * | 2008-01-31 | 2008-10-15 | 西北工业大学 | Self focusing -type optical current mutual inductor |
CN101819225A (en) * | 2010-05-12 | 2010-09-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Magneto-optical current sensor and manufacturing method thereof |
CN201804036U (en) * | 2010-09-17 | 2011-04-20 | 淄博思科电子技术开发有限公司 | Full optical fiber current transformer |
CN202330527U (en) * | 2011-11-23 | 2012-07-11 | 华中科技大学 | Optical electric field sensor |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000235049A (en) * | 1998-12-18 | 2000-08-29 | Nissin Electric Co Ltd | Photovoltage/electric field sensor |
CN101285855A (en) * | 2008-01-31 | 2008-10-15 | 西北工业大学 | Self focusing -type optical current mutual inductor |
CN101819225A (en) * | 2010-05-12 | 2010-09-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Magneto-optical current sensor and manufacturing method thereof |
CN201804036U (en) * | 2010-09-17 | 2011-04-20 | 淄博思科电子技术开发有限公司 | Full optical fiber current transformer |
CN202330527U (en) * | 2011-11-23 | 2012-07-11 | 华中科技大学 | Optical electric field sensor |
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