CN102426281A - Longitudinal modulation optical voltage sensor - Google Patents

Longitudinal modulation optical voltage sensor Download PDF

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Publication number
CN102426281A
CN102426281A CN2011103187478A CN201110318747A CN102426281A CN 102426281 A CN102426281 A CN 102426281A CN 2011103187478 A CN2011103187478 A CN 2011103187478A CN 201110318747 A CN201110318747 A CN 201110318747A CN 102426281 A CN102426281 A CN 102426281A
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China
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optical fiber
metal electrode
fiber collimator
wave plate
crystal
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CN2011103187478A
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Chinese (zh)
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CN102426281B (en
Inventor
郭志忠
张国庆
于文斌
周颖
申岩
路忠峰
王贵忠
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哈尔滨工业大学
北京许继电力光学技术有限公司
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Publication of CN102426281A publication Critical patent/CN102426281A/en
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Publication of CN102426281B publication Critical patent/CN102426281B/en

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Abstract

The invention discloses a longitudinal modulation optical voltage sensor, and relates to an optical voltage sensor, which solves the problem of influence of interference of an external electric field and non-uniform distribution of an inter-electrode electric field on measured voltage by using a longitudinal modulation mode, and has superior temperature stability. The sensor comprises optical fiber collimators, a zone plate polarizing prism, polarization beam splitting prism, a BGO (Bismuth Germanium Oxide) crystal, a metal electrode and an electrode lead, wherein a transparent conducting film is plated on two light transmitting surfaces of the BGO crystal and is adhered to the metal electrode through a conductive adhesive. Light beam is collimated through a first optical fiber collimator and irradiates into the BGO crystal after passing through the zone plate polarizing prism; detected voltage acts on the transparent conductive film of the BGO crystal through the electrode lead and the metal electrode; and the light beam emitted from the BGO crystal irradiates into the polarization beam splitting prism, is led to two vertical vibration directions to generate interference and emit respectively, and enters a second optical fiber collimator and a third optical fiber collimator to be coupled and output a light signal for measuring the voltage.

Description

Vertical modulated optical voltage sensor

Technical field

The present invention relates to a kind of voltage sensor, be specifically related to a kind of vertical modulated optical voltage sensor.

Background technology

In electric system; Voltage transformer (VT) is to obtain continuous data and indispensable equipment is protected in the electric system operation; In recent years, along with the raising of voltage class of electric power system, the defective of traditional type voltage transformer (VT) highlights day by day; Can't satisfy the demand, and optical voltage transformer receives much concern as a kind of alternative technology.The optical voltage transformer volume is little, in light weight, bandwidth, dynamic range big, numeral output, capacity is unrestricted and be convenient to link to each other with computing machine; It does not have ferromagnetic saturated phenomenon; Can not only measure metastability exchange voltage; Also can measure the transient voltage that direct current or alternating current-direct current mix, in addition, optical voltage transformer also has good insulating, strong, good, the degree of accuracy advantages of higher of measurement sensitivity of antijamming capability.The optical voltage sensor that the present invention relates to is the core component that optical voltage transformer is realized measurement, and its performance directly influences the performance of mutual inductor.

Optical voltage sensor is to utilize the Pockels effect of electrooptical modulation crystal to realize voltage measurement.The Pockels effect is meant that the refractive index of crystal can change when on some crystal, applying external electric field, and the optical effect that this variations in refractive index causes can accurately be measured out through the method for polarization interference, thereby reaches the purpose of measuring voltage.Optical voltage sensor based on the Pockels effect has two kinds of modulation systems, a kind ofly is laterally modulation (be optical propagation direction with electric field added direction vertical), another kind ofly is vertical the modulation (be optical propagation direction with electric field added direction consistent).Laterally the beam propagation of modulation can not decayed by electrode, and electrode material is selected well, sensor relatively simple for structure; Therefore be widely used; But its shortcoming is the additional phase error that exists natural birefringence to cause, this phase differential is subject to the influence that ambient temperature changes, thereby reduces the job stability of sensor; Simultaneously, the inhomogeneous measuring accuracy that also can reduce sensor of the interference of external electric field and interpolar Electric Field Distribution.Comparatively speaking, vertically the natural birefringence of modulation is than laterally modulation is little many, and it is littler than horizontal modulation that sensor is acted upon by temperature changes; And, be exactly the definition of electric field intensity according to the point-to-point transmission potential difference (PD) along the line integral of free routing, the distribution of vertically modulating voltage and electric field between two electrodes is irrelevant; The inhomogeneous of the interference of external electric field and interpolar Electric Field Distribution can not impact voltage measurement; But, because vertically the optical direction of modulation requires electrode to possess good electrical conductivity and higher transmittance simultaneously with to apply voltage direction consistent; Yet concerning most of materials; These two requirements are contradiction, and therefore, the making of transparency electrode becomes to hinder vertically modulates the main cause that develops.The present invention has solved this problem through the method at the logical optical surface vapor deposition indium tin oxide transparent conducting film (ITO) of electrooptical modulation crystal, and this film has following characteristics: conduct electricity very well, resistivity is less than 10 -5Ω m, light transmission rate is high, can be greater than 85%, strong adhesion, stability is better; Ito thin film is current research and most widely used nesa coating, developed comparative maturity, realized commercialization, obtain easily; In addition, reasonable in design of the present invention, each optical element is by light path requirement accurate positioning, and the insertion loss value of sensor is low; Simultaneously, insulating Design of the present invention meets the demands, and makes sensor possess enough electric strengths, and leaves big nargin.

Summary of the invention

The purpose of this invention is to provide a kind of vertical modulated optical voltage sensor, it is in order to solve the shortcoming that measuring accuracy in the prior art is subject to external electric field working sensor stability reduction when disturbing with the influence of interpolar non-uniform electric and temperature variation.

It comprises first optical fiber collimator 1, second optical fiber collimator 9, the 3rd optical fiber collimator 10, band wave plate polarizing prism 2, polarization splitting prism 3, BGO crystal 4, first metal electrode 5, second metal electrode 6, first contact conductor 7 and second contact conductor 8.

The order of passing through by light first optical fiber collimator 1, band wave plate polarizing prism 2, first metal electrode 5, BGO crystal 4, second metal electrode 6, polarization splitting prism 3 and second optical fiber collimator 9 along the straight line coaxial arrangement, and vertical the 3rd optical fiber collimator 10 of arranging with above-mentioned straight line at polarization splitting prism 3 places, said band wave plate polarizing prism 2 are glued together by polarizing prism and quarter-wave plate and form; Wherein, the fast and slow axis of shake the thoroughly direction and the quarter-wave plate of polarizing prism in angle of 45 degrees, the direction of shaking thoroughly of said polarization splitting prism 3 is parallel or vertical with the direction of shaking thoroughly of polarizing prism in the band wave plate polarizing prism 2; Said BGO crystal 4 is along (001); (100), the cutting of (010) crystal face, wherein two (001) faces are logical light face; Be coated with nesa coating on it; Nesa coating is further bonding through conducting resinl and first metal electrode 5 and second metal electrode 6, and the center of first metal electrode 5 has the first light hole 5-1, and first contact conductor 7 is welded in the upper end; The center of second metal electrode 6 has the second light hole 6-1; Upper end welding second contact conductor 8, light beam can unobstructedly pass from the first light hole 5-1 and the second light hole 6-1, simultaneously; Tested voltage acts on the nesa coating of two logical light faces of BGO crystal 4 through first contact conductor 7, second contact conductor 8 and first metal electrode 5, second metal electrode 6; The BGO crystal 4 is in the equally distributed relatively electric field, under effect of electric field, BGO crystal 4 generation induced birefringence; Its two induction main shafts are along the diagonal of crystal, and are parallel with the fast and slow axis direction of quarter-wave plate in the band wave plate polarizing prism 2 simultaneously.

The invention has the beneficial effects as follows: adopt the vertically mode of modulation, effectively raise the accuracy of measurement and the temperature stability of optical voltage sensor, identify through test; Each item technical indicator of the present invention all reaches former designing requirement, the linearity≤± 0.2%, and running temperature is in-40~+ 60 ℃ of scopes; After taking indemnifying measure, measuring error≤± 0.1% is when existing external electric field to disturb; Need not compensation; Measuring error≤± 0.1%, accuracy of measurement reach 0.2 grade of electric system metering, for the practicability and the industrialization of optical voltage sensor provides ripe design and manufacturing experience.

Description of drawings

Fig. 1 is a structural representation of the present invention, and Fig. 2 is an A-A diagrammatic cross-section of the present invention, and Fig. 3 is the synoptic diagram of BGO crystal of the present invention.

Embodiment

Embodiment one, specify this embodiment below in conjunction with Fig. 1; It comprises first optical fiber collimator 1, second optical fiber collimator 9, the 3rd optical fiber collimator 10, band wave plate polarizing prism 2, polarization splitting prism 3, BGO crystal 4, first metal electrode 5, second metal electrode 6, first contact conductor 7 and second contact conductor 8

The order of passing through by light first optical fiber collimator 1, band wave plate polarizing prism 2, first metal electrode 5, BGO crystal 4, second metal electrode 6, polarization splitting prism 3, second optical fiber collimator 9 along the straight line coaxial arrangement, and vertical the 3rd optical fiber collimator 10 of arranging with above-mentioned straight line at polarization splitting prism 3 places, said band wave plate polarizing prism 2 are glued together by polarizing prism and quarter-wave plate and form; Wherein, the fast and slow axis of shake the thoroughly direction and the quarter-wave plate of polarizing prism in angle of 45 degrees, the direction of shaking thoroughly of said polarization splitting prism 3 is parallel or vertical with the direction of shaking thoroughly of polarizing prism in the band wave plate polarizing prism 2; Said BGO crystal 4 is along (001); (100), the cutting of (010) crystal face, wherein two (001) faces are logical light face; Be coated with nesa coating on it; Nesa coating is further bonding through conducting resinl and first metal electrode 5 and second metal electrode 6, and the center of first metal electrode 5 has the first light hole 5-1, and first contact conductor 7 is welded in the upper end; The center of second metal electrode 6 has the second light hole 6-1; Upper end welding second contact conductor 8, light beam can unobstructedly pass from the first light hole 5-1 and the second light hole 6-1, simultaneously; Tested voltage acts on the nesa coating of two logical light faces of BGO crystal 4 through first contact conductor 7, second contact conductor 8 and first metal electrode 5, second metal electrode 6; The BGO crystal 4 is in the equally distributed relatively electric field, under effect of electric field, BGO crystal 4 generation induced birefringence; Its two induction main shafts are along the diagonal of crystal, and are parallel with the fast and slow axis direction of quarter-wave plate in the band wave plate polarizing prism 2 simultaneously.

Incident beam is a directional light through first optical fiber collimator, 1 collimation; Change circularly polarized light into through band wave plate polarizing prism 2; Circularly polarized light passes the first light hole 5-1 incident BGO crystal 4; Tested voltage acts on the nesa coating of two logical light faces of BGO crystal 4 through first contact conductor 7, second contact conductor 8 and first metal electrode 5, second metal electrode 6; The BGO crystal 4 has become biaxial crystal by the optical isotropy body under the effect of extra electric field, its two induction main shafts are along the diagonal of crystal.After circularly polarized light incides the BGO crystal 4, be decomposed into two bunch polarized lights, the polarization direction of this two bunch polarized light is parallel to two induction main shafts of BGO crystal 4 respectively, and under effect of electric field, two bunch polarized lights can produce a phase differential:

Wherein U π = λ 2 n 0 3 γ 41 , Be called half-wave voltage;

In the formula, λ is an incident light wave length, n 0Be the refractive index of BGO crystal 4, r 41Be the linear electro-optic coefficient of BGO crystal 4, U is tested voltage.It is thus clear that phase differential is directly proportional with the size of tested voltage,, just can realize the purpose of measuring voltage if detect the phase place extent.

In order to detect this phase differential; Adopt the method for polarization interference will change detection into to the detection of phase place to light intensity; Make and pass the second light hole 6-1 from the light beam of BGO crystal 4 outgoing and incide polarization splitting prism 3; It is guided to two bunch polarized lights on two orthogonal direction of vibration to produce and interferes and outgoing respectively, and when tested voltage during much smaller than the half-wave voltage of crystal, the light intensity of two bundle emergent lights is respectively:

I 1 = I 0 ( 1 - πU U π ) , I 2 = I 0 ( 1 + πU U π )

I in the formula 0Light intensity for the light source outgoing.This two bundles emergent light enters into second optical fiber collimator 9 and the 3rd optical fiber collimator 10 and coupled into optical fibres subsequently respectively; Be sent to photodetector through optical fiber again and change electric signal into; And handle accordingly according to the double light path penalty method by circuit and computing machine, can obtain tested voltage.

Embodiment two, specify this embodiment below in conjunction with Fig. 1; This embodiment with the difference of embodiment one is: it also comprises aluminum base 11; First optical fiber collimator 1, second optical fiber collimator 9, the 3rd optical fiber collimator 10, band wave plate polarizing prism 2 and polarization splitting prism 3 are fixed on the aluminum base 11; Aluminum base 11 is provided with gathering sill and locating slot; Gathering sill is used for fixing first optical fiber collimator 1, second optical fiber collimator 9 and the 3rd optical fiber collimator 10, and locating slot is used for fixing band wave plate polarizing prism 2 and polarization splitting prism 3, and the coaxial and position relation of each optical element is satisfied in the design of gathering sill and locating slot.

Embodiment three, specify this embodiment below in conjunction with Fig. 1; This embodiment with the difference of embodiment two is: it also comprises base of ceramic 12; Base of ceramic 12 is fixed on the aluminum base 11; BGO crystal 4, first metal electrode 5 and second metal electrode 6 are fixed on the base of ceramic 12

Base of ceramic 12 employed stupaliths have fabulous electrical insulation capability; Can satisfy between first metal electrode 5 and second metal electrode 6, between first metal electrode 5 and the aluminum base 11 and the insulating requirements between second metal electrode 6 and the aluminum base 11; Simultaneously; This stupalith has the thermal expansivity that is close with the BGO crystal 4, when variation of ambient temperature, can reduce to a great extent because the caused stress birefrin effect of thermal expansion coefficient difference between the different materials.

Embodiment four, specify this embodiment below in conjunction with Fig. 1; This embodiment with the difference of embodiment two is: it also comprises gathers tetrafluoro loam cake 13; Gather tetrafluoro loam cake 13 and pass through screw retention on aluminum base 11; Be sealed in first optical fiber collimator 1, second optical fiber collimator 9, the 3rd optical fiber collimator 10, band wave plate polarizing prism 2, polarization splitting prism 3, BGO crystal 4, first metal electrode 5, second metal electrode 6, first contact conductor 7 and second contact conductor 8 and gather tetrafluoro loam cake 13 and fasten in the cavity that forms, play the effect of protection optical component with aluminum base 11.

Claims (4)

1. vertical modulated optical voltage sensor; It is characterized in that: comprise first optical fiber collimator (1), second optical fiber collimator (9), the 3rd optical fiber collimator (10), band wave plate polarizing prism (2), polarization splitting prism (3), BGO crystal (4), first metal electrode (5), second metal electrode (6), first contact conductor (7) and second contact conductor (8)
Order by light passes through first optical fiber collimator (1), band wave plate polarizing prism (2), first metal electrode (5), BGO crystal (4), second metal electrode (6), polarization splitting prism (3) and second optical fiber collimator (9) along the straight line coaxial arrangement; Locate vertical the 3rd optical fiber collimator (10) of arranging with above-mentioned straight line at polarization splitting prism (3), said band wave plate polarizing prism (2) is formed by polarizing prism and quarter-wave plate gummed, wherein; The fast and slow axis of shake the thoroughly direction and the quarter-wave plate of polarizing prism in angle of 45 degrees; The direction of shaking thoroughly of said polarization splitting prism (3) is parallel or vertical with the direction of shaking thoroughly of polarizing prism in the band wave plate polarizing prism (2), and said BGO crystal (4) is along (001), (100); (010) crystal face cutting; Wherein two (001) faces are coated with nesa coating for logical light face on it, and it is bonding that nesa coating further passes through conducting resinl and first metal electrode (5) and second metal electrode (6); The center of first metal electrode (5) has first light hole (5-1); Upper end welding first contact conductor (7), the center of second metal electrode (6) has second light hole (6-1), and second contact conductor (8) is welded in the upper end; Light beam can unobstructedly pass from first light hole (5-1) and second light hole (6-1); Simultaneously, tested voltage acts on the nesa coating of (4) two logical light faces of BGO crystal through first contact conductor (7), second contact conductor (8) and first metal electrode (5), second metal electrode (6), and BGO crystal (4) is in the equally distributed relatively electric field; Under effect of electric field; Induced birefringence takes place in BGO crystal (4), and its two induction main shafts are along the diagonal of crystal, and are parallel with the fast and slow axis direction of quarter-wave plate in the band wave plate polarizing prism (2) simultaneously.
2. vertical modulated optical voltage sensor according to claim 1; It is characterized in that: it also comprises aluminum base (11); First optical fiber collimator (1), second optical fiber collimator (9), the 3rd optical fiber collimator (10), band wave plate polarizing prism (2) and polarization splitting prism (3) are fixed on the aluminum base (11); Aluminum base (11) is provided with gathering sill and locating slot; Gathering sill is used for fixing first optical fiber collimator (1), second optical fiber collimator (9) and the 3rd optical fiber collimator (10), and locating slot is used for fixing band wave plate polarizing prism (2) and polarization splitting prism (3), and the coaxial and position relation of each optical element is satisfied in the design of gathering sill and locating slot.
3. vertical modulated optical voltage sensor according to claim 2; It is characterized in that: it also comprises base of ceramic (12); Base of ceramic (12) is fixed on the aluminum base (11), and BGO crystal (4), first metal electrode (5) and second metal electrode (6) are fixed on the base of ceramic (12).
4. vertical modulated optical voltage sensor according to claim 2; It is characterized in that: it also comprises gathers tetrafluoro loam cake (13); Gather tetrafluoro loam cake (13) through screw retention on aluminum base (11), be sealed in first optical fiber collimator (1), second optical fiber collimator (9), the 3rd optical fiber collimator (10), band wave plate polarizing prism (2), polarization splitting prism (3), BGO crystal (4), first metal electrode (5), second metal electrode (6), first contact conductor (7) and second contact conductor (8) and gather in the cavity that tetrafluoro loam cake (13) and aluminum base (11) fastening form.
CN 201110318747 2011-10-19 2011-10-19 Longitudinal modulation optical voltage sensor CN102426281B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103018520A (en) * 2012-12-26 2013-04-03 武汉烽火富华电气有限责任公司 Optical sensing head for voltage detection and method for manufacturing optical sensing head
CN103777056A (en) * 2013-12-13 2014-05-07 国家电网公司 Vertical modulation reciprocity type optical voltage sensor
CN103954827A (en) * 2014-04-03 2014-07-30 易能乾元(北京)电力科技有限公司 Optical current sensor
CN104685363A (en) * 2012-08-21 2015-06-03 Abb技术有限公司 Electro optical voltage transducer signal processing system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5969341A (en) * 1996-10-11 1999-10-19 Kabushiki Kaisha Toyota Chuo Kenkyusho Optical integrated voltage sensor for optically measuring the magnitude of a voltage
CN2541850Y (en) * 2002-03-20 2003-03-26 华中科技大学 Optical fiber electric field sensor
CN1419129A (en) * 2002-12-12 2003-05-21 华中科技大学 Optical fibre electric field sensor
CN101852824A (en) * 2009-03-30 2010-10-06 徐启峰 Digital photoelectric voltage sensor
EP2348326A2 (en) * 2010-01-11 2011-07-27 Gesellschaft für Antriebs- und Energietechnik, Regelungs- und Automatisierungssysteme mbH Current sensor unit and method for signal and/or data transfer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5969341A (en) * 1996-10-11 1999-10-19 Kabushiki Kaisha Toyota Chuo Kenkyusho Optical integrated voltage sensor for optically measuring the magnitude of a voltage
CN2541850Y (en) * 2002-03-20 2003-03-26 华中科技大学 Optical fiber electric field sensor
CN1419129A (en) * 2002-12-12 2003-05-21 华中科技大学 Optical fibre electric field sensor
CN101852824A (en) * 2009-03-30 2010-10-06 徐启峰 Digital photoelectric voltage sensor
EP2348326A2 (en) * 2010-01-11 2011-07-27 Gesellschaft für Antriebs- und Energietechnik, Regelungs- und Automatisierungssysteme mbH Current sensor unit and method for signal and/or data transfer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
李开成等: "基于电光效应的几种光纤电压传感器", 《高压电器》 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104685363A (en) * 2012-08-21 2015-06-03 Abb技术有限公司 Electro optical voltage transducer signal processing system
CN104685363B (en) * 2012-08-21 2017-09-29 Abb技术有限公司 electro-optical voltage transducer signal processing system
CN103018520A (en) * 2012-12-26 2013-04-03 武汉烽火富华电气有限责任公司 Optical sensing head for voltage detection and method for manufacturing optical sensing head
CN103018520B (en) * 2012-12-26 2016-02-17 武汉烽火富华电气有限责任公司 A kind of voltage detecting optical sensing head and preparation method thereof
CN103777056A (en) * 2013-12-13 2014-05-07 国家电网公司 Vertical modulation reciprocity type optical voltage sensor
CN103954827A (en) * 2014-04-03 2014-07-30 易能乾元(北京)电力科技有限公司 Optical current sensor

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Effective date of registration: 20190530

Address after: 150001 No. 92 West straight street, Nangang District, Heilongjiang, Harbin

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Address before: 150001 No. 92 West straight street, Nangang District, Heilongjiang, Harbin

Co-patentee before: Beijing Phoebus Vision Optoelectronics Technology Co., Ltd.

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