CN109030904B - Temperature self-compensation method for longitudinal modulation optical voltage transformer - Google Patents
Temperature self-compensation method for longitudinal modulation optical voltage transformer Download PDFInfo
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- CN109030904B CN109030904B CN201810767153.7A CN201810767153A CN109030904B CN 109030904 B CN109030904 B CN 109030904B CN 201810767153 A CN201810767153 A CN 201810767153A CN 109030904 B CN109030904 B CN 109030904B
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- insulating medium
- additional insulating
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- bismuth germanate
- angle prism
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- 230000003287 optical effect Effects 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 72
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 49
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 49
- 230000000694 effects Effects 0.000 claims abstract description 26
- 230000005684 electric field Effects 0.000 claims abstract description 17
- 230000005540 biological transmission Effects 0.000 claims abstract description 5
- 230000008030 elimination Effects 0.000 claims description 3
- 238000003379 elimination reaction Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005350 ferromagnetic resonance Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/24—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
- G01R35/02—Testing or calibrating of apparatus covered by the other groups of this subclass of auxiliary devices, e.g. of instrument transformers according to prescribed transformation ratio, phase angle, or wattage rating
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention relates to a temperature self-compensation method of a longitudinal modulation optical voltage transformer. And a first additional insulating medium, a first reflection right-angle prism, a bismuth germanate crystal, a second reflection right-angle prism and a second additional insulating medium are sequentially arranged between the high-voltage electrode and the ground electrode. Laser is emitted from the first reflection right-angle prism, is guided out by the second reflection right-angle prism after passing through the crystal, and the light passing direction is consistent with the electric field direction; the additional insulating medium does not have the electro-optic effect, and the length proportion relation of the bismuth germanate crystal and the insulating medium along the light transmission direction is adjusted, so that the temperature coefficients of the dielectric constants of the bismuth germanate crystal and the insulating medium can be offset from the temperature coefficient of the electro-optic effect of the crystal, and the influence of temperature drift is eliminated.
Description
Technical Field
The invention belongs to the technical field of high voltage measurement of power systems, and particularly relates to a temperature self-compensation method of a longitudinal modulation optical voltage transformer.
Background
The optical voltage transformer utilizes optical materials (usually bismuth germanate crystals) to sense voltage and transmits signals through light, so that the optical voltage transformer has the advantages of no ferromagnetic resonance, no iron core saturation, excellent insulating property, small volume, light weight and the like. However, the temperature drift problem is a bottleneck that restricts the practicability of the optical voltage transformer. The ABB company provides a method for self-compensating the temperature of a longitudinal modulation optical voltage transformer, and transparent fused quartz is added to a bismuth germanate crystal along the light-passing path direction, so that the electro-optic effect temperature coefficient and the dielectric constant temperature coefficient of the crystal are mutually offset, and the influence of temperature drift on the electro-optic effect of the crystal is eliminated. However, a prerequisite for this approach is that the temperature coefficient of permittivity of fused silica is much smaller than that of bismuth germanate crystals, making the former negligible. However, studies have shown that [1]In the working range of the mutual inductor from minus 40 ℃ to 70 ℃, the temperature coefficient of dielectric constant of the fused quartz is 1.50 × 10-4And the temperature coefficient of dielectric constant of the bismuth germanate crystal is 1.84 × 10-4The difference between the two is almost the same, and obviously, the difference cannot be ignored, so that the method is not established.
Disclosure of Invention
The invention aims to provide a temperature self-compensation method of a longitudinal modulation optical voltage transformer, which can counteract the influence of temperature drift on the electro-optic effect of a crystal and improve the measurement accuracy; in addition, the reflecting right-angle prism is adopted to form a return light path, so that the severe requirement that the longitudinal modulation has good light transmission on an additional medium can be avoided.
In order to achieve the purpose, the technical scheme of the invention is as follows: a temperature self-compensation method for a longitudinal modulation optical voltage transformer is characterized in that a first additional insulating medium, a first reflection right-angle prism, a bismuth germanate crystal, a second reflection right-angle prism and a second additional insulating medium are sequentially arranged between a high-voltage electrode and a ground electrode; laser is injected from the first reflection right-angle prism, passes through the bismuth germanate crystal and is guided out by the second reflection right-angle prism, and the light passing direction is consistent with the electric field direction; because the first additional insulating medium and the second additional insulating medium do not have the electro-optic effect, the temperature coefficients of the dielectric constants of the first additional insulating medium and the second additional insulating medium are offset from the temperature coefficient of the electro-optic effect of the bismuth germanate crystal by adjusting the length proportional relation of the bismuth germanate crystal, the first additional insulating medium and the second additional insulating medium along the light-transmitting direction, so that the influence of temperature drift on the electro-optic effect of the bismuth germanate crystal is eliminated; meanwhile, the first reflection right-angle prism, the second reflection right-angle prism and the return light path formed by the bismuth germanate crystal are adopted, so that the harsh requirement that longitudinal modulation has good light transmittance on an additional medium can be avoided.
In an embodiment of the present invention, the method is specifically implemented by the following principle:
phase retardation of bismuth germanate crystals
And electric field E1The relationship of (c) can be expressed as:
wherein n is0Is the refractive index of the crystal; gamma ray41Linear electro-optic coefficient of the crystal; λ is the wavelength of the incident light; k is the electro-optic effect coefficient of the crystal; d is the length of the crystal along the direction of the electric field;
the effect of temperature on bismuth germanate crystals can therefore be expressed as:
the thermal expansion coefficient of the bismuth germanate crystal is only 6.3 × 10-6/° c, which is two orders of magnitude lower than the dielectric constant of the reflecting right angle prism and the dielectric constant of the additional insulating medium, and thus negligible, equation (2) is rewritten as:
if f (T) is 0, the temperature drift has no influence on the crystal;
the first additional insulating medium, the second additional insulating medium and the first reflecting right-angle prism and the second reflecting right-angle prism meet the following conditions:
wherein d is1Is the thickness of the crystal; e2An electric field in the first and second additional insulating media; d2Is the total thickness of the additional medium; e3The electric field of the first and second reflecting right-angle prisms; d3Is the total thickness of the prism; u is the voltage to be measured;1the dielectric constant of the bismuth germanate crystal;2the dielectric constants of the first additional insulating medium and the second additional insulating medium;3the dielectric constants of the first and second reflecting right-angle prisms; elimination of E2And E3Obtaining:
and (3) calculating the partial derivative of the temperature T:
since the reflecting right-angle prism is only used for returning the light path, the thickness is fixed and small, and therefore d3Can be ignored; bringing formula (6) into formula (3) to obtain:
if the temperature coefficient of the dielectric constant of the additional insulating medium is known, the thickness proportional relation between the bismuth germanate crystal and the additional insulating medium can be obtained by the belt type (7), so that the purpose of eliminating the influence of the temperature on the electro-optic effect of the bismuth germanate crystal can be achieved.
Compared with the prior art, the invention has the following beneficial effects: the temperature self-compensation method of the longitudinal modulation optical voltage transformer can offset the influence of temperature drift on the electro-optic effect of the crystal and improve the measurement accuracy; in addition, the reflecting right-angle prism is adopted to form a return light path, so that the severe requirement that the longitudinal modulation has good light transmission on an additional medium can be avoided.
Drawings
Fig. 1 is a schematic diagram of the present invention.
Detailed Description
The technical scheme of the invention is specifically explained below with reference to the accompanying drawings.
The invention provides a temperature self-compensation method of a longitudinal modulation optical voltage transformer, which is characterized in that a first additional insulating medium, a first reflection right-angle prism, a bismuth germanate crystal, a second reflection right-angle prism and a second additional insulating medium are sequentially arranged between a high-voltage electrode and a ground electrode; laser is injected from the first reflection right-angle prism, passes through the bismuth germanate crystal and is guided out by the second reflection right-angle prism, and the light passing direction is consistent with the electric field direction; because the first additional insulating medium and the second additional insulating medium do not have the electro-optic effect, the temperature coefficients of the dielectric constants of the first additional insulating medium and the second additional insulating medium are offset from the temperature coefficient of the electro-optic effect of the bismuth germanate crystal by adjusting the length proportional relation of the bismuth germanate crystal, the first additional insulating medium and the second additional insulating medium along the light-transmitting direction, so that the influence of temperature drift on the electro-optic effect of the bismuth germanate crystal is eliminated; meanwhile, the first reflection right-angle prism, the second reflection right-angle prism and the return light path formed by the bismuth germanate crystal are adopted, so that the harsh requirement that longitudinal modulation has good light transmittance on an additional medium can be avoided.
As shown in FIG. 1, in a high voltage electrode [1 ]]And ground electrode [11]A first additional insulating medium [4 ] is arranged between the two]First reflection right-angle prism[6]Bismuth germanate crystal [7 ]]A second reflection right-angle prism [8 ]]A second additional insulating medium [10 ]](ii) a Support [2]For supporting and adjusting high-voltage electrodes [1 ]]And ground electrode [11]Inter space, SF6Insulating gas [3]Is filled with high voltage electrode [1 ]]And ground electrode [11]A return light path [9 ] formed by the first reflection right-angle prism, the second reflection right-angle prism and the bismuth germanate crystal]The harsh requirement of longitudinal modulation for good light transmission of the additional medium can be avoided. Laser [5 ]]From a first reflecting right-angle prism [6 ]]Injected into and passes through bismuth germanate crystal [7 ]]Then a second reflecting right-angle prism [8 ]]And (4) leading out, wherein the light passing direction is consistent with the electric field direction. The influence of temperature drift on the bismuth germanate can be eliminated by adjusting the thickness proportional relation of each material. The specific theory is derived as follows.
Phase retardation of bismuth germanate crystals
And electric field E1The relationship of (c) can be expressed as:
wherein n is0Is the refractive index of the crystal; gamma ray41Linear electro-optic coefficient of the crystal; λ is the wavelength of the incident light; k is the electro-optic effect coefficient of the crystal; d is the length of the crystal along the direction of the electric field;
the effect of temperature on bismuth germanate crystals can therefore be expressed as:
the thermal expansion coefficient of the bismuth germanate crystal is only 6.3 × 10-6/° c, which is two orders of magnitude lower than the dielectric constant of the reflecting right angle prism and the dielectric constant of the additional insulating medium, and thus negligible, equation (2) is rewritten as:
if f (T) is 0, the temperature drift has no influence on the crystal;
the first additional insulating medium, the second additional insulating medium and the first reflecting right-angle prism and the second reflecting right-angle prism meet the following conditions:
wherein d is1Is the thickness of the crystal; e2An electric field in the first and second additional insulating media; d2Is the total thickness of the additional medium; e3The electric field of the first and second reflecting right-angle prisms; d3Is the total thickness of the prism; u is the voltage to be measured;1the dielectric constant of the bismuth germanate crystal;2the dielectric constants of the first additional insulating medium and the second additional insulating medium;3the dielectric constants of the first and second reflecting right-angle prisms; elimination of E2And E3Obtaining:
and (3) calculating the partial derivative of the temperature T:
since the reflecting right-angle prism is only used for returning the light path, the thickness is fixed and small, and therefore d3Can be ignored; bringing formula (6) into formula (3) to obtain:
if the temperature coefficient of the dielectric constant of the additional insulating medium is known, the thickness proportional relation between the bismuth germanate crystal and the additional insulating medium can be obtained by the belt type (7), so that the purpose of eliminating the influence of the temperature on the electro-optic effect of the bismuth germanate crystal can be achieved.
The additional medium being BZN ceramic, e.g. having a dielectric constant2117, temperature coefficient of dielectric constant-3.10 × 10-4/. degree.C., available with equation (7):
d2＝1.71d1(8)
therefore, when the thicknesses of the bismuth germanate crystal and the BZN ceramic satisfy the formula (8), the influence of temperature on the electro-optic effect of the bismuth germanate crystal can be eliminated.
The above are preferred embodiments of the present invention, and all changes made according to the technical scheme of the present invention that produce functional effects do not exceed the scope of the technical scheme of the present invention belong to the protection scope of the present invention.
Claims (2)
1. A temperature self-compensation method for a longitudinal modulation optical voltage transformer is characterized in that a first additional insulating medium, a first reflection right-angle prism, a bismuth germanate crystal, a second reflection right-angle prism and a second additional insulating medium are sequentially arranged between a high-voltage electrode and a ground electrode; laser is injected from the first reflection right-angle prism, passes through the bismuth germanate crystal and is guided out by the second reflection right-angle prism, and the light passing direction is consistent with the electric field direction; because the first additional insulating medium and the second additional insulating medium do not have the electro-optic effect, the temperature coefficients of the dielectric constants of the first additional insulating medium and the second additional insulating medium are offset from the temperature coefficient of the electro-optic effect of the bismuth germanate crystal by adjusting the length proportional relation of the bismuth germanate crystal, the first additional insulating medium and the second additional insulating medium along the light-transmitting direction, so that the influence of temperature drift on the electro-optic effect of the bismuth germanate crystal is eliminated; meanwhile, the foldback light path formed by the first reflection right-angle prism, the second reflection right-angle prism and the bismuth germanate crystal can avoid the harsh requirement that longitudinal modulation has good light transmission on the first additional insulating medium and the second additional insulating medium.
2. The temperature self-compensation method for the longitudinally modulated optical voltage transformer according to claim 1, wherein the method is implemented by the following principle:
phase retardation of bismuth germanate crystals
And electric field E1The relationship of (c) can be expressed as:
wherein n is0Is the refractive index of the crystal; gamma ray41Linear electro-optic coefficient of the crystal; λ is the wavelength of the incident light; k is the electro-optic effect coefficient of the crystal; d is the length of the crystal along the direction of the electric field;
the effect of temperature on bismuth germanate crystals can therefore be expressed as:
the thermal expansion coefficient of the bismuth germanate crystal is only 6.3 × 10-6/° c, two orders of magnitude lower than the dielectric constants of the first and second reflecting right-angle prisms and the dielectric constants of the first and second additional insulating media, and thus negligible, equation (2) is rewritten as:
if f (T) is 0, the temperature drift has no influence on the crystal;
the first additional insulating medium, the second additional insulating medium and the first reflecting right-angle prism and the second reflecting right-angle prism meet the following conditions:
wherein d is1Is the thickness of the crystal; e2An electric field in the first and second additional insulating media; d2Is the total thickness of the first additional insulating medium and the second additional insulating medium; e3The electric field of the first and second reflecting right-angle prisms; d3The total thickness of the first reflection right-angle prism and the second reflection right-angle prism; u is the voltage to be measured;1the dielectric constant of the bismuth germanate crystal;2the dielectric constants of the first additional insulating medium and the second additional insulating medium;3the dielectric constants of the first and second reflecting right-angle prisms; elimination of E2And E3Obtaining:
and (3) calculating the partial derivative of the temperature T:
since the first and second reflecting right-angle prisms are used only for returning the optical path, the thickness is fixed and small, and thus d3Can be ignored; bringing formula (6) into formula (3) to obtain:
if the temperature coefficient of the dielectric constant of the additional insulating medium is known, the thickness proportional relation between the bismuth germanate crystal and the additional insulating medium can be obtained by the belt type (7), so that the purpose of eliminating the influence of the temperature on the electro-optic effect of the bismuth germanate crystal can be achieved.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH08220149A (en) * | 1995-02-15 | 1996-08-30 | Yaskawa Electric Corp | Photovoltaic sensor |
| JP2000235049A (en) * | 1998-12-18 | 2000-08-29 | Nissin Electric Co Ltd | Photovoltage/electric field sensor |
| EP1229337A1 (en) * | 2001-02-06 | 2002-08-07 | Abb Research Ltd. | Procedure for temperaturecompensated electro-optic measuring of a voltage |
| EP1462810B1 (en) * | 2003-03-28 | 2015-09-09 | ABB Research Ltd. | Temperature compensated electro-optical voltage sensor |
| CN102411080B (en) * | 2011-11-23 | 2013-05-22 | 华中科技大学 | Optical electric field sensor |
| CN102495260B (en) * | 2011-12-29 | 2013-09-04 | 哈尔滨工业大学 | Temperature drift compensation optical current transformer and current compensation method thereof |
| CN103995166A (en) * | 2014-04-29 | 2014-08-20 | 国家电网公司 | Temperature-compensated optical current measurement module and temperature-compensated optical current transformer |
| CN104122423B (en) * | 2014-07-15 | 2017-06-23 | 国家电网公司 | The self-compensating device and method of a kind of BGO crystal electro-optic coefficient temperature dependency |
| CN105911324B (en) * | 2016-06-30 | 2018-12-21 | 北京航空航天大学 | A kind of optical sensing devices inhibiting voltage sensor temperature error |
| CN106771470A (en) * | 2017-01-05 | 2017-05-31 | 福州大学 | Improve the medium pack of optical voltage transformer internal electric field distribution |
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