CN102396082A - Production line for the production of multiple sized photovoltaic devices - Google Patents
Production line for the production of multiple sized photovoltaic devices Download PDFInfo
- Publication number
- CN102396082A CN102396082A CN2010800172972A CN201080017297A CN102396082A CN 102396082 A CN102396082 A CN 102396082A CN 2010800172972 A CN2010800172972 A CN 2010800172972A CN 201080017297 A CN201080017297 A CN 201080017297A CN 102396082 A CN102396082 A CN 102396082A
- Authority
- CN
- China
- Prior art keywords
- substrate
- module
- cut
- composite construction
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 50
- 239000000758 substrate Substances 0.000 claims abstract description 313
- 238000000034 method Methods 0.000 claims abstract description 79
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 230000008021 deposition Effects 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000012360 testing method Methods 0.000 claims abstract description 29
- 239000002131 composite material Substances 0.000 claims description 117
- 238000010276 construction Methods 0.000 claims description 56
- 239000011521 glass Substances 0.000 claims description 56
- 238000005520 cutting process Methods 0.000 claims description 45
- 238000000151 deposition Methods 0.000 claims description 36
- 230000007246 mechanism Effects 0.000 claims description 25
- 239000003344 environmental pollutant Substances 0.000 claims description 22
- 231100000719 pollutant Toxicity 0.000 claims description 22
- 238000003698 laser cutting Methods 0.000 claims description 13
- 238000007599 discharging Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 82
- 238000012545 processing Methods 0.000 abstract description 76
- 238000004140 cleaning Methods 0.000 abstract description 30
- 230000008569 process Effects 0.000 abstract description 16
- 230000015572 biosynthetic process Effects 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 10
- 238000009434 installation Methods 0.000 abstract description 2
- 230000005611 electricity Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 85
- 229910021417 amorphous silicon Inorganic materials 0.000 description 21
- 238000002360 preparation method Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 12
- 239000013081 microcrystal Substances 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- 238000000608 laser ablation Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 230000002950 deficient Effects 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000275 quality assurance Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 238000011068 loading method Methods 0.000 description 5
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 4
- 238000007704 wet chemistry method Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- RWVIXLAPUYQGIG-UHFFFAOYSA-N (3-oxophenothiazin-2-yl)azanium;chloride Chemical group Cl.C1=CC=C2SC3=CC(=O)C(N)=CC3=NC2=C1 RWVIXLAPUYQGIG-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 101000860173 Myxococcus xanthus C-factor Proteins 0.000 description 2
- 229920002292 Nylon 6 Polymers 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000002242 deionisation method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000004826 seaming Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical group [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229930091051 Arenine Natural products 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 240000005373 Panax quinquefolius Species 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- HBVFXTAPOLSOPB-UHFFFAOYSA-N nickel vanadium Chemical compound [V].[Ni] HBVFXTAPOLSOPB-UHFFFAOYSA-N 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- -1 polyethylene butyraldehyde Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67236—Apparatus for manufacturing or treating in a plurality of work-stations the substrates being processed being not semiconductor wafers, e.g. leadframes or chips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67727—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using a general scheme of a conveying path within a factory
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
Abstract
Embodiments of the present invention generally relate to a system used to form solar cell devices using processing modules adapted to perform one or more processes in the formation of the solar cell devices. In one embodiment, the system is adapted to form thin film solar cell devices by accepting a large unprocessed substrate and performing multiple deposition, material removal, cleaning, bonding, testing, and sectioning processes to form multiple complete, functional, and tested solar cell devices that can then be shipped to an end user for installation in a desired location to generate electricity. The system is adapted to receive a single large substrate and form multiple silicon thin film solar cell devices from the single large substrate.
Description
[technical field under the background of invention]
Technical field under the invention
Embodiments of the invention are generally relevant with the production line in order to the solar cell device that forms a plurality of sizes.
Description of related art
(Photovoltaic, PV) equipment or solar cell are to be used for converting sunlight to direct current (Direct Current, DC) equipment of power supply to photovoltaic.Typical film-type PV equipment or thin-film solar cells have one or more p-i-n knot, and each p-i-n knot comprises a p type layer (P-typed Layer), an intrinsic layer (Intrinsic Type Layer) and a n type layer (N-typed Layer).Be exposed to sunlight when (it contains the energy of photon) when the p-i-n of solar cell ties, sunlight promptly converts electric power into through the PV effect.Solar cell can be laid and be bigger solar array.Solar array is that flat board (Panel) produces by several solar cells of connection and with specific frame or connector with its joint.
Generally speaking, thin-film solar cells comprises behaviour area (or photoelectric conversion unit), and configuration is as transparent conductive oxide (Transparent Conductive Oxide, the TCO) film of preceding electrode and/or rear electrode.Photoelectric conversion unit comprise p type silicon layer, n type silicon layer and be interposed in p type silicon layer and n type silicon layer between the Intrinsical silicon layer.Can use several silicon thin films to form p type layer, n type layer and/or the intrinsic layer of photoelectric conversion unit; These silicon thin films comprise microcrystalline silicon film (Microcrystalline Silicon; μ c-Si), amorphous silicon membrane (Amorphous Silicon; α-Si), polysilicon membrane (Polycrystalline Silicon, poly-Si) etc.Back side electrodes can contain one or more conductive layers.Need a kind of improve processing procedure form have the good interface contact, low contact resistance and the solar cell of high whole electric equipment performance is provided.
Because conventional energy source price is soaring, demands a kind of utilization low-cost electric power production method of solar cell device cheaply urgently.It is high labour-intensive property that traditional solar cell is made processing procedure, and has various interruption interference can influence production line treating capacity, solar cell cost and equipment yield.For example, for special applications, promptly need the specific solar cell equipment size.Traditional manufacture of solar cells line or only can make the solar cell device of single size, or need a large amount of downtimes with manufacture of solar cells line processing procedure manual switch for holding different substrate sizes, producing the solar cell device of different size.Therefore, need badly a kind ofly make all stages of processing procedure, to produce the production line of the solar cell device of multiple size from single large substrate.
[summary of the invention]
In an embodiment of the present invention, a kind of system that is used to make solar cell device has comprised: substrate receives module, and this substrate receives module in order to receive a prebasal plate; Cluster tool, this cluster tool has treatment chamber, in order to the depositing silicon layer on a surface of this prebasal plate; Back of the body contact deposition chambers, this back of the body contact deposition chambers is through being configured on this silicon-containing layer, to deposit back contact; Engage module, this joint module is through being configured to that this silicon-containing layer and this back contact between this prebasal plate and the back of the body substrate are packaged into composite construction; Cut and cut a module, this is cut and cuts module and be cut into two or more sections through being configured to this composite construction cut; And system controller, this system controller is used to control and coordinates respectively that this substrate receives module, this cluster tool, this treatment chamber, this back of the body contact deposition chambers, this joint module and this cuts the function of section module.
In another embodiment of the present invention, a kind of system that is used to make solar cell device comprises: substrate receives module, and this substrate receives module in order to receive a prebasal plate; Cluster tool, this cluster tool has a treatment chamber, in order to the depositing silicon layer on a surface of this prebasal plate; Back of the body contact deposition chambers, this back of the body contact deposition chambers is through being configured to deposit back contact on this silicon-containing layer; Engage module, this joint module is through being configured to that this silicon-containing layer and this back contact between this prebasal plate and the back of the body substrate are packaged into composite construction; The test module, this test module is through being configured to test the performance characteristics of this composite construction; Cut and cut a module, this is cut and cuts module through being configured to be cut into two or more sections with cutting through this composite construction of test, and wherein this is cut and cuts a module and comprise a composite construction detent mechanism and a composite construction guillotine cutter structure; And system controller, this system controller is used to control and coordinates respectively that this substrate receives module, this cluster tool, this treatment chamber, this back of the body contact deposition chambers, this joint module, this test module and this cuts the function of section module.
In another embodiment of the present invention, a kind of method of handling solar cell device comprises: clean substrate removes one or more pollutant with the surface from this substrate; The deposition light absorbing zone is on this surface of this substrate; Remove at least a portion of this light absorbing zone from this lip-deep zone of this substrate; The deposition back contact is on this light absorbing zone on this substrate; Remove at least a portion of this back contact and this light absorbing zone from this lip-deep zone of this substrate; Engage back of the body glass substrate and this substrate, to form composite construction, wherein this back contact and this light absorbing zone are engaged between this back of the body glass substrate and this substrate; (junction box) is pasted to this composite construction with one or more terminal box; Test the performance characteristics of this composite construction; And this composite construction cut be cut into two or more sections.
[accompanying drawing simple declaration]
Be clearer understanding above-mentioned characteristic of the present invention, the more specifically explanation of above-mentioned simplified summary of the present invention is carried out with reference to embodiment, and these embodiment are described in the accompanying drawing.Yet, should notice that accompanying drawing only explains general embodiment of the present invention, thereby should not be regarded as the usefulness that limits its scope that the present invention also allows other equivalent embodiment.
Fig. 1 has explained the process sequence that is used to form solar cell apparatus according to an embodiment of the invention.
Fig. 2 has explained the plane graph of manufacture of solar cells line according to an embodiment of the invention.
Fig. 3 A is the side cross-sectional view of thin-film solar cells equipment according to an embodiment of the invention.
Fig. 3 B is the side cross-sectional view of thin-film solar cells equipment according to an embodiment of the invention.
Fig. 3 C is the plane graph of composite solar battery structure according to an embodiment of the invention.
Fig. 3 D is the sectional view of being got in the cross section along A-A among Fig. 3 C.
Fig. 3 E is the side cross-sectional view of thin-film solar cells equipment according to an embodiment of the invention.
Fig. 4 A-4E explains the schematic plan view of cutting the processing procedure that cuts module according to an embodiment of the invention.
Fig. 5 A-5C is that part is cut the signal resolution chart that cuts module according to an embodiment of the invention, and these signal resolution charts have been explained and cut the processing procedure that cuts a composite solar battery structure.
Fig. 6 is the schematic depiction of laser cutting device according to an embodiment of the invention, and this laser cutter is used to cut and cuts a composite solar battery structure.
[embodiment]
Embodiments of the invention generally are to form the system of one or more processing procedures of processing procedure with the formation solar cell device about being used for utilizing processing module (processing modules) to carry out solar cell device.In one embodiment; This system is applicable to and forms thin-film solar cells equipment; Thereby this system removes, cleans, engages, tests and cut and cut processing procedure and form a plurality of complete, functional solar cell device with through testing by receiving a large-scale untreated substrate and carrying out a plurality of depositions, material; These solar cell device can then be transported to the terminal user place, to be installed in the generating desired position.
In one embodiment, this system can receive single large-scale untreatment base, and produces a plurality of less solar cell device.In one embodiment, this system can change the size from the solar cell device that single large substrate produced under the situation that does not manually move or adjust any system module.Although following explanation is the formation of describing silicon film solar batteries equipment basically; Desire limits scope of the present invention yet this disposes not; Because apparatus and method for as herein described also can be used for forming, testing and analyze the solar cell device of other types, for example III-V same clan type solar cell, film chalcogenide (chalcogenide) solar cell (for example CIGS, CdTe battery), amorphous or nanocrystal silicon solar cell, photochemistry type solar cells (for example dye sensitization), solar cells made of crystalline silicon, organic type solar cells or other similar solar cell device.
In one embodiment, this system is generally the automatic processing module that is used to form solar cell device and the arranged (arrangement) of automatic equipment, and these automatic processing modules are connected mutually with an automated material-handling system with automatic equipment.In one embodiment; This system is fully automatic solar cell device production line; This production line reduces or has eliminated the needs for the interactive and/or labour-intensive treatment step of the mankind, with the reproducibility of promoting equipment dependability, processing procedure and the operation costs that form processing procedure.
In a configuration; This system is applicable to from single large substrate and forms a plurality of silicon film solar batteries equipment; And this system generally comprises: the substrate that is applicable to the substrate that reception one is written into receives module; With one or more absorbed layer deposition cluster tool; This cluster tool has: at least one treatment chamber, be used on a treatment surface of substrate deposition one silicon-containing layer, one or more back of the body contact deposition chambers, and be used on the treatment surface of substrate, depositing back contact, one or more material removes chamber; Be used to remove the lip-deep material of processing substrate, packaging system; Be used for forming composite solar battery structure, autoclave (Autoclave) module, be used to heat this composite solar battery structure and make it be exposed to pressure, the terminal box attach area (junction box attaching region) that is higher than atmospheric pressure, make this solar cell device be connected to external module, one or more quality assurance module in order to attach a connection device from substrate; Be used for test and the formed solar cell device of authentication and one or more and cut and cut a module, be used for formed solar cell device cut and be truncated into a plurality of less solar cell device.Said one or more quality assurance module comprises a solar simulator, a parameter testing module and a shunting degradation and authentication (shunt bust and qualification) module.
Fig. 1 has explained a kind of embodiment of process sequence 100, and this process sequence 100 has comprised a plurality of steps (that is step 102 is to 146) that are used for forming at novel manufacture of solar cells line 200 as herein described solar cell device.In the process sequence 100 sequence of the configuration of treatment step, quantity and treatment step not desire limit scope of the present invention.Fig. 2 is the plane graph of an embodiment of production line 200, and this embodiment is intended to exemplary process module and other related fields of handling process and system design between illustrative system, and therefore not desire limit scope of the present invention.
Generally speaking, system controller 290 is in order to be controlled at one or more assembly in the manufacture of solar cells line 200.System controller 290 generally is designed to promote the control and the automation of whole solar cell production line 200; And generally comprise a CPU (Central Processing Unit, CPU) (not shown), memory (not shown) and support circuits (or I/O) (not shown).CPU is be used for the industrial any kind computer processor of setting wherein a kind of; Move to control various systemic-functions, substrate, chamber processing procedure and support hardware (for example sensor, automation equipment, motor, bulb etc.), and monitoring program (for example substrate support temperature, power supply supply variation, chamber treatment time, I/O signal etc.).Memory is connected to CPU; And its be direct available memory wherein one or more; Random access memory (Random Access Memory for example; RAM), read-only memory (Read Only Memory, ROM), this machine or the remote digital holder of floppy disk, hard disk or any other form.Software instruction and data can and be stored in the memory with indication CPU through coding.Support circuits also is connected to CPU, and it supports processor in a conventional manner.Support circuits comprises cache memory (Cache), power supply unit, clock pulse circuit, input/output circuitry and subsystem etc.Can have been determined by the program (or computer instruction) that system controller 290 reads can be to the work of substrate execution; Be preferably; This program is the software that can be read by system controller 290, this software comprise in order to carry out with monitoring, the instruction of moving execution and control, support and/or substrate orientation related work and manufacture of solar cells line 200 in performed various treatment formulations work and the various chamber treatment step of filling a prescription.In one embodiment; System controller 290 also comprises a plurality of programmable logic controller (PLC)s (the Programmable Logic Controllers in order to one or more module in the part control manufacture of solar cells; And handle the material handling system controller (for example PLC or standard computer) that the more high-level strategy of whole solar cell production line moves, dispatches and operates PLCs).
Assembly described in process sequence shown in Figure 1 capable of using and the manufacture of solar cells line 200 and the instance of the solar cell 300 that forms are explained in Fig. 3 A to Fig. 3 E.Fig. 3 A is the rough schematic view of single-node amorphous or microcrystalline silicon solar cell 300, and these solar cell 300 following systems capable of using form and analyze.Shown in Fig. 3 A, unijunction amorphous or microcrystalline silicon solar cell 300 are towards light source or solar radiation 301.Solar cell 300 generally comprises substrate 302, and for example glass substrate, polymeric substrates, metal substrate or other suitable substrates are formed with film above it.In one embodiment, substrate 302 is glass substrates, and its size is about 2200mm * 2600mm * 3mm.Solar cell 300 also comprise first transparent conductive oxide that is formed at substrate 302 tops (Transparent Conducting Oxide, TCO) layer 310 (for example zinc oxide ZnO, tin oxide SnO), be formed at these first tco layer, 310 tops p-i-n knot 320, be formed at a p-i-n and tie second tco layer 340 of 320 tops and the back contact 350 that is formed at these second tco layer, 340 tops.
For catching promoting light absorption by promoting light, can be optionally and make substrate and/or be formed at the one layer or more film veining (textured) on the substrate with wet method, plasma, ion and/or mechanical treatment.For example, in the embodiment shown in Fig. 3 A, first tco layer 310 is through veining, and the follow-up film that is deposited on its top generally promptly can be followed the surperficial topology kenel of below.
In a configuration, the n type microcrystal silicon layer 326 that p-i-n knot 320 can comprise p type amorphous silicon layer 322, be formed at the Intrinsical amorphous silicon layer 324 of p type amorphous silicon layer 322 tops and be formed on Intrinsical amorphous silicon layer 324 tops.In one example; P type amorphous silicon layer 322 can be formed up to the thickness of
extremely about
approximately; Intrinsical amorphous silicon layer 324 can be formed up to the thickness of
extremely about
approximately, and n type microcrystal silicon layer 326 can be formed up to pact
about thickness extremely approximately.Back contact 350 can comprise but be not limited to be selected from the material of aluminium (Al), silver (Ag), titanium (Ti), chromium (Cr), gold (Au), copper (Cu), platinum (Pt), its alloy and its combination.
Fig. 3 B is the sketch map of an embodiment of solar cell 300, and this solar cell 300 is many knots (multi-junction) solar cells towards light or solar radiation 301.Solar cell 300 comprises substrate 302, and for example glass substrate, polymeric substrates, metal substrate or other suitable substrates are formed with film above substrate 302.Solar cell 300 can also comprise first tco layer 310, the p-i-n knot 320 that is formed at these first tco layer, 310 tops that are formed at substrate 302 tops, be formed at a p-i-n tie 320 tops the 2nd p-i-n knot 330, be formed at the 2nd p-i-n and tie second tco layer 340 of 330 tops and the back contact 350 that is formed at these second tco layer, 340 tops.In the embodiment shown in Fig. 3 B, first tco layer 310 is through veining, and the follow-up film that is deposited on its top generally promptly can be followed the surperficial topology kenel of below.
The one p-i-n knot 320 can comprise p type amorphous silicon layer 322, is formed at the Intrinsical amorphous silicon layer 324 on this p type amorphous silicon layer 322 and is formed at the n type microcrystal silicon layer 326 on this Intrinsical amorphous silicon layer 324.In one example; P type amorphous silicon layer 322 can be formed up to the thickness of
extremely about
approximately; Intrinsical amorphous silicon layer 324 can be formed up to the thickness of
extremely about
approximately, and n type microcrystal silicon layer 326 can be formed up to pact
thickness of
extremely approximately.
The 2nd p-i-n knot 330 can comprise p type microcrystal silicon layer 332, is formed at the Intrinsical microcrystal silicon layer 334 on this p type microcrystal silicon layer 332 and is formed at the n type amorphous silicon layer 336 on this Intrinsical microcrystal silicon layer 334.In one example; P type microcrystal silicon layer 332 can be formed up to the thickness of
extremely about
approximately; Intrinsical microcrystal silicon layer 334 can be formed up to the thickness of
extremely about
approximately, and n type amorphous silicon layer 336 can be formed up to pact
thickness of
extremely approximately.Back contact 350 can comprise but be not limited to be selected from the material of aluminium (Al), silver (Ag), titanium (Ti), chromium (Cr), gold (Au), copper (Cu), platinum (Pt), its alloy and its combination.
Fig. 3 C is a plane graph; This plane graph illustrative have an example on back surface of composite construction of the solar cell 300 (for example less solar cell 300A-300D) of four shapings; These solar cells 300 have been formed on the single substrate 302, like the substrate that can in production line 200, be produced.Less solar cell 300A-300D forms on substrate 302, to form two or more less solar cells by the section (for example reference symbol 386) that removes sedimentary deposit (for example reference symbol 310-350).Though that illustrate is four less solar cell 300A-300D, it is not to be used to limit scope of the present invention, and the present invention also can be applicable to any amount of solar cell 300 of formation on the single large substrate 302.For example, production line 200 can be via process sequence 100 from single 5.7m
2Substrate production go out single 5.7m
2 Solar cell 300, two 2.8m
2Less solar cell 300 or four 1.4m
2Less solar cell 300.
Fig. 3 D is the part side cross-sectional views (seeing section A-A) of the less solar cell 300A of one of them shown in Fig. 3 C.Though Fig. 3 D has explained the cross section of the single junction cell similar with the configuration shown in Fig. 3 A, it is not intended to limit the scope of the invention.
Shown in Fig. 3 C and Fig. 3 D, each less solar cell 300A-300D contains the part (for example reference symbol 310-350), the part that one or more internal electrical connects (for example side connecting plate (side buss) 355, cross connecting plate (cross-buss) 356), layer of bonding material 360, a part and the terminal box (junction box) 370 of back of the body glass substrate 361 of solar cell device element of a part, the deposition of substrate 302.Terminal box 370 can comprise two tie points 371,372; These two tie points see through side connecting plate 355 is electrically connected to part with cross connecting plate 356 less solar cell 300A-300D, and these connecting plates are electrically connected with behaviour area (for example reference symbol 320) with the back of the body contact plate 350 of each less solar cell 300A-300D.
Hereinafter; For avoiding misunderstanding for the special action of on substrate 302, carrying out, the substrate 302 with one layer or more sedimentary deposit (for example reference symbol 310-350) and/or configuration internal electrical connection (for example side connecting plate 355, cross connecting plate 356) on it is commonly referred to as equipment substrate 303.Similarly, the equipment substrate 303 that has utilized layer of bonding material 360 to be engaged to back of the body glass substrate 361 then is called composite solar battery structure 304.Generally speaking, the configuration meeting of the single solar cell of formation is specified on whole base plate 302; Otherwise term " solar cell 300 " generally is that expression utilizes following step to be formed on one of them of two or more less solar cell (for example reference symbol 300A-300D among Fig. 3 C) on the part larger substrate 302.
Fig. 3 E is the schematic section of a solar cell 300, and this sectional view has been explained the various scored area that are used to form each battery 382A-382B in the solar cell 300.In one example, shown in Fig. 3 C, there are nine independent batteries 382 to be formed among the less solar cell 300A.Shown in Fig. 3 E, solar cell 300 comprises transparency carrier 302, first tco layer 310, p-i-n knot 320 and back contact 302.Can carry out four delineation steps (for example laser grooving and scribing step) and form groove 381A, 381B, 381C and 381D, these grooves generally are that formation high efficiency solar cell equipment is required.Though be to be formed on together on the substrate 302, yet each battery 382A and 382B are isolated from each other by formed insulated trench 381C in back contact 350 and the p-i-n knot 320.In addition, groove 381B is formed in the p-i-n knot 320, makes back contact 350 electrically contact with first tco layer 310.In one embodiment, insulated trench 381A is by removing first tco layer 310 of part with laser grooving and scribing before at deposition the one p-i-n knot 320 and back contact 350 and forming.Similarly, in one embodiment, groove 381B is formed in the p-i-n knot 320 by before deposition back contact 350, removing the p-i-n knot 320 of part with laser grooving and scribing.In addition, for substrate 302 top edges are isolated and the separation of less solar cell 300A-300D individually, groove 381D is formed through back contact 350, p-i-n knot layer 320 and first tco layer 310.Though Fig. 3 E explanation is the solar cell of unijunction type, yet is not intended to limit the scope of the invention in this kind configuration.
General solar cell forms fabrication steps
With reference to Fig. 1 and Fig. 2, process sequence 100 generally starts from step 102, and substrate 302 is loaded in the loading module 202 in the manufacture of solar cells line 200 in this step.In one embodiment, substrate 302 is received with " raw material (raw) " state, and wherein the edge of substrate 302, overall dimensions and/or cleanliness factor all do not receive excellent control.Receive the cost that " raw material " substrate 302 has reduced preparation and storage substrate 302 before forming solar cell, and thereby reduce the production cost of solar cell device cost, facility cost and the final solar cell device that forms.Yet; Generally speaking; Before advantageously in step 102, substrate 302 being received in the system, receive transparent conductive oxide (Transparent Conducting Oxide arranged; TCO) layer (for example first tco layer 310) is deposited on " raw material " substrate 302 on the substrate 302, if conductive layer (for example tco layer) is not deposited on the surface of " raw material " substrate, then needs following preceding contact deposition (front contact deposition) step (step 107) is carried out on the surface of substrate 302.
In one embodiment, substrate 302 or 303 is written in the manufacture of solar cells line 200 with continuation mode, thereby does not need box or batch substrate loading system.Box and/or batch loading system need substrate from the card casket carry out, treated, before moving on to the next step of process sequence, return the card casket then, this loses time and has reduced the treating capacity of manufacture of solar cells line.The use that batch is handled can't improve some embodiment that for example makes multiple solar cell device from single substrate of the present invention.In addition; Use substrate that the batch process sequence generally can avoid the use of asynchronous flow process through production line, believe and do the processing substrate amount of can be during stable state being handled and improvement being provided like this when one or more module interrupts because of maintenance or malfunction.Generally speaking; Batch or box scheme can not be (or more specific during normal operation; When one or more is handled module and interrupts because of maintenance) reach the treating capacity of production line described herein, this is because the arrangement of substrate needs a large amount of administrative times with being written into.
In step 104, the surface of preparation substrate 302 is to avoid the yield problem in the successive process.In an embodiment of step 104; Substrate is planted to front end stitching (front end seaming) module 204; This module 204 is in order to the edge of preparation substrate 302 or 303, to reduce the possibility of infringement (particle that is for example taken place during the successive process produces and peels off).Can influence the equipment yield and the cost of production available solar energy battery apparatus to the infringement of substrate 302 or 303.In one embodiment, front end is sewed up module 204 in order to the edge of rounding substrate 302 or 303 or make it become the inclined-plane.In one embodiment, use is full of the belt body of diamond or the material that video disc grinds away substrate 302 or 303 edges.In another embodiment, use abrasive wheel, blasting treatment or laser ablation technology to remove the material at substrate 302 or 303 edges.
Then, substrate 302 or 303 is transferred into cleaning module 206, in this module 206 to substrate 302 or 303 execution in step 106 (or board cleaning step) to remove its lip-deep any pollutant.Common pollutant be included in substrate form during the processing procedure (for example glass processing procedure) and/or substrate 302 or 303 transport or be deposited between the storage life material on substrate 302 or 303.Generally speaking, cleaning module 206 uses wet chemistry to scrub and wash (rinsing) step and removes any unwanted pollutant.
In one example, substrate 302 or 303 cleaning processing procedure carry out in the following manner.At first, substrate 302 or 303 removes section from the pollutant that transmits table or automatics 281 entering cleaning modules 206.Generally speaking, system controller 290 has been set up each and has been got into the substrate 302 of cleaning module 206 or 303 sequential.Pollutant removes the dry cylindric brush spare of section utilization and takes out pollutant with vacuum system and its surface from substrate 302 is evicted from.Then, the conveyers in the cleaning module 206 are sent to one with substrate 302 or 303 and wash section in advance, and wherein (De-ionized, DI) to scatter out temperature for example be on 50 ℃ hot deionized water to the substrate 302 or 303 surface to water heater to spray line from deionization.Generally speaking, owing to have tco layer configuration on it on the equipment substrate 303, and because of tco layer generally is all the Electron absorption material, DI water is used to avoid the ionization of little mark (trace) with the tco layer of any possible pollutant.Then, the substrate 302,303 through flushing gets into the cleaning section; In cleaning section, substrate 302 or 303 is with brush part (for example perlon (Perlon)) and hot water wet-cleaning in addition.In the part instance, use abluent (for example AlconoxTM, CitrajetTM, DetojetTM, TranseneTM and Basic HTM), surfactant, pH adjustment agent and other cleaning chemistry materials to clean and remove undesired pollutant and particle on the substrate surface.Water circulation system can circulating hot water.Then, in the last flushing section of cleaning module 206, substrate 302 or 303 washes with water under room temperature, to remove little mark of any pollutant.At last, in dry section, use air blast to come dry substrate 302 or 303 with hot-air.In a configuration,, drying process utilize the deionization rod member to remove the electric charge on substrate 302 or 303 when accomplishing.
In an embodiment of step 108, delineation tco layer 310 is to form battery independent, electric insulation on the surface of substrate 302.On the surface of tco layer 310 and/or the contaminant particle on the exposed surface of substrate 302 can hinder the delineation program.For example, in laser grooving and scribing, when laser beam passes through particle, possibly can't depict continuous circuit, thereby will between battery, produce short circuit.In addition, be present in shunting and the inhomogeneities that any graininess fragment of delineating on pattern and/or the tco layer 310 can produce interlayer after the delineation.Therefore, need a kind ofly define well and keep good processing procedure and guarantee that pollutant can be removed in the whole production processing procedure.In one embodiment; Can be from the California energy and environment engineering department of the Applied Materials of Sheng Takelai (Energy and Environment Solutions division of Applied Materials in Santa Clara California) obtains cleaning module 206.
With reference to Fig. 1 and Fig. 2; In one embodiment; Before execution in step 108, substrate 302 is transferred into a front-end processing module (not being shown in Fig. 2), handles in the module at this front end substrate 302 is carried out preceding contact formation (front contact formation) processing procedure (or step 107).In one embodiment, the front-end processing module is similar to following processing module 218.In step 107, contact formation step comprises one or more preparations, etching and/or material deposition steps before this one or more substrate, contact area before forming on the solar cell substrate 302 that these steps are used to expose.In one embodiment, step 107 comprises one or more physical vapour deposition (PVD)s (Physical Vapor Deposition, contact area before PVD) step, these steps are used to form on the surface of substrate 302 usually.In one embodiment, preceding contact area comprises transparent conductive oxide (TCO) layer 310, and this tco layer 310 contains the metallic element that is selected from zinc (Zn), aluminium (Al), indium (In), reaches tin (Sn).In one example, use zinc oxide (ZnO) to form at least a portion of preceding contact layer.In one embodiment, the front-end processing module is ATON
TMPVD 5.7 instruments, it can be taken from the holy Plutarch in California and come Applied Materials, has carried out one or more treatment step therein with contact forming step before depositing.In another embodiment, use one or more chemical vapour deposition (CVD)s (Chemical Vapor Deposition, CVD) step and contact area before on the surface of substrate 302, forming.
Then, equipment substrate 303 is transferred into delineation module 208, delineates in module 208 to equipment substrate 303 execution in step 108 (or preceding contact isolation step), so that equipment substrate 303 lip-deep zoness of different are electrically insulated each other at this.In step 108, remove step (for example laser ablation processing procedure) by materials used and remove the material on the equipment substrate 303.The successful key of step 108 is the isolation at the battery-battery and the battery-edge that will reach good, and makes the delineation area reach minimum.In one embodiment, utilize neodymium: vanadate (Nd:YVO4) lasing light emitter comes corrode to fall equipment substrate 303 lip-deep materials, to form the zone and next regional electric insulation that circuit makes equipment substrate 303.In one embodiment; Performed laser grooving and scribing processing procedure uses the pulse laser of the wavelength of 1064nm to come the material on the one patterned substrate 302 during step 108, to isolate each individual cell (for example each battery 382A and 382B) that produces solar cell 300.The 5.7m that Applied Materials supplied that in one embodiment, can use the holy Plutarch in California
2Substrate laser delineation module provide simple and easy, reliable optical device and substrate to move, the usefulness of the accurate electric insulation in the zone that the supply equipment substrate is 303.Utilize water injection cutting tool or diamond to delineate xegregating unit substrate 303 lip-deep each zones in another embodiment.
On the one hand; Temperature when expectation utilizes active temperature control hardware assembly to guarantee that equipment substrate 303 gets into delineation modules 208 be about 20 ℃ to about 26 ℃ scope, this active temperature control hardware assembly can contain resistance heater and/or cooling package (for example heat exchanger, thermal power unit).In one embodiment, the temperature of expectation control appliance substrate 303 is about 25 ± 0.5 ℃.
Secondly; Equipment substrate 303 is transferred into cleaning module 210; In this cleaning module 210, equipment substrate 303 is carried out step 110 (or deposition prebasal plate cleaning), before execution, contact isolation step (step 108) any pollutant on the equipment substrate 303 afterwards to remove.Generally speaking, after carrying out the battery isolation step, cleaning module 210 uses wet chemistrys to scrub and rinsing step removes the equipment substrate 303 surfaces pollutant of needs of why not taking up an official post.In one embodiment, equipment substrate 303 is carried out cleaning processing procedure (being similar to the processing procedure described in the above-mentioned steps 106) to remove equipment substrate 303 lip-deep any pollutants.
Then, equipment substrate 303 is transferred into to be handled in the module 212, in this processing module 212, equipment substrate 303 carry out step 112, and step 112 comprises one or light absorber deposition step repeatedly.In step 112, said one or repeatedly the light absorber deposition step comprise one or more preparations, etching and/or material deposition steps, these steps are in order to form each zone of solar cell device.Step 112 generally comprises a series of sub-treatment step, and in order to form one or more p-i-n knot, for example p-i-n knot the 320 and the 2nd p-i-n knot 330.In one embodiment, this one or more p-i-n knot comprises amorphous silicon and/or microcrystal silicon material.
Generally speaking, carry out in these one or more treatment steps one or more cluster tool (for example cluster tool 212A-212D) in handling module 212, on equipment substrate 303, to form the one layer or more rete.In one embodiment, equipment substrate 303 is sent to an accumulator 211A earlier before being sent to one or more cluster tool 212A-212D.In one embodiment; When solar cell device forms when comprising multiple knot (the for example tandem joint solar cell shown in Fig. 3 B); The cluster tool 212A that handles in the module 212 ties 320 in order to form a p-i-n, and cluster tool 212B-212D is through being configured to form the 2nd p-i-n knot 330.
In an embodiment of process sequence 100, after execution in step 112, carry out a cooling step 113.Cooling step is generally in order to the temperature of stabilizing equipment substrate 303, to guarantee that each equipment substrate 303 being seen treatment conditions all is repeatably in subsequent processing steps.Generally speaking, the temperature of leaving the equipment substrate 303 of handling module 212 can change and reaches a lot of degrees centigrade, and can surpass 50 ℃ temperature, and this can make subsequent processing steps and changing property of solar cell properties.
In one embodiment, carry out in cooling step 113 one or more base plate supports position in one or more accumulator 211.In a kind of configuration of production line, as shown in Figure 2, treated equipment substrate 303 is positioned to reach one needs period among one of them accumulator 211B, with the temperature of control appliance substrate 303.In one embodiment, system controller 290 is in order to position, the sequential and mobile of control appliance substrate 303 through accumulator 211, to proceed to the production line temperature of control appliance substrate 303 before in downstream.
Then, equipment substrate 303 is transferred into delineation module 214, and in delineation module 214, equipment substrate 303 being interconnected forms step (or step 114), so that equipment substrate 303 lip-deep each zones are electrically insulated from each other.In step 114, utilize material to remove step (for example laser ablation processing procedure) and remove equipment substrate 303 lip-deep materials.In one embodiment, utilize neodymium: vanadate (Nd:YVO4) lasing light emitter comes corrode to fall the material on the substrate surface, makes single battery and next battery electric insulation to form circuit.The 5.7m that in one embodiment, can use Applied Materials to supply
2Substrate laser delineation module carry out accurate delineation processing procedure.In one embodiment, performed laser grooving and scribing processing procedure uses the pulse laser of the wavelength of 532nm to come the material on the one patterned equipment substrate 303 during step 114, to isolate the individual cell that produces solar cell 300.Shown in Fig. 3 E, in one embodiment, in step 114, utilize the laser grooving and scribing processing procedure in a p-i-n ties 320 layers, to form groove 381B.In another embodiment, utilize water injection cutting tool or diamond to delineate xegregating unit substrate 303 lip-deep each zones.
On the one hand; Temperature when expectation utilizes active temperature control hardware assembly to guarantee that equipment substrate 303 gets into delineation modules 208 be about 20 ℃ to about 26 ℃ scope, this active temperature control hardware assembly can contain resistance heater and/or cooling package (for example heat exchanger, thermal power unit).In one embodiment, the expectation of the temperature of equipment substrate 303 is controlled to be about 25 ± 0.5 ℃.
In one embodiment, manufacture of solar cells line 200 has at least one accumulator 211, and this accumulator 211 is positioned at after the delineation module 214.At production period; Use accumulator 211C to stablize supply equipment substrate 303 to handling module 218; And/or when 218 declines of processing module maybe can't keep and delineate the treating capacity of module 214, provide a collecting zone to store from the equipment substrate 303 of handling module 212.
In one embodiment, general expectation monitoring and/or ACTIVE CONTROL are left the temperature of the equipment substrate 303 of accumulator 211C, are repeatably to guarantee to carry on the back the result who contacts formation step 120.On the one hand, the temperature that expectation is confirmed to leave accumulator 211C or arrived at the equipment substrate 303 of handling module 218 be between about 20 ℃ to about 26 ℃ scope.In one embodiment, the expectation of the temperature of equipment substrate 303 is controlled to be about 25 ± 0.5 ℃.In one embodiment, the expectation location can keep one or more accumulator 211C of at least 80 equipment substrates 303.
Next, equipment substrate 303 is transferred into handles module 218, in handling module 218, equipment substrate 303 is carried out one or more back of the body contacts and forms (back contact formation) step (or step 118).In step 118, said one or more back of the body contacts form steps and comprise one or repeatedly preparation, etching and/or material deposition steps, and these steps are used to form the back of the body contact area of solar cell device.In one embodiment, step 118 has generally comprised one or more PVD steps, and this step is used to form on the surface of equipment substrate 303 back contact 350.In one embodiment, these one or more PVD steps are in order to form back of the body contact area, and this back of the body contact area contains the metal level that is selected from zinc (Zn), tin (Sn), aluminium (Al), copper (Cu), silver (Ag), nickel (Ni), reaches vanadium (V).In one example, can use zinc oxide (ZnO) or nickel-vanadium alloy (NiV) to form the back contact 350 of at least a portion.In one embodiment, these one or more treatment steps utilize the holy Plutarch in California to come the ATON of Applied Materials
TMPVD 5.7 instruments carry out.In another embodiment, use one or more CVD steps on the surface of equipment substrate 303, to form back contact 350.
In one embodiment, manufacture of solar cells line 200 has at least one accumulator 211, and this accumulator 211 is positioned to be handled after the module 218.At production period; Accumulator 211D is in order to stablize supply equipment substrate 303 to delineation module 220; And/or maybe can't keep providing a collecting zone to store when handling the treating capacity of module 218 from the equipment substrate 303 of handling module 218 in the decline of delineation module 220.
In one embodiment, general expectation monitoring and/or ACTIVE CONTROL are left the temperature of the equipment substrate 303 of accumulator 211D, are repeatably to guarantee to carry on the back the result who contacts formation step 120.On the one hand, expectation guarantee to leave accumulator 211D or arrive delineation module 220 equipment substrate 303 temperature between about 20 ℃ to about 26 ℃ scope.In one embodiment, the temperature of expectation control appliance substrate 303 is about 25 ± 0.5 ℃.In one embodiment, expectation is placed and can be kept one or more accumulator 211C at least about 80 equipment substrates 303.
Next, equipment substrate 303 is transferred into delineation module 220, in this delineation module 220, equipment substrate 303 execution in step 120 or the back of the body is contacted isolation step, so that the individual cell on the substrate surface is electrically insulated from each other.In step 120, materials used removes the material that step (for example laser ablation processing procedure) removes substrate surface.In one embodiment, use neodymium: vanadate (Nd:YVO4) lasing light emitter comes corrode to fall equipment substrate 303 lip-deep materials, to form an independent battery and the next electric insulation that circuit makes equipment substrate 303.The 5.7m that in one embodiment, can use Applied Materials to supply
2The accurate desired zone of delineation equipment substrate 303 of substrate laser delineation module.In one embodiment, performed laser grooving and scribing processing procedure uses the pulse laser of 532nm wavelength to come the material on the one patterned equipment substrate 303 in the step 120, to isolate each battery that forms solar cell 300.Shown in Fig. 3 E, in one embodiment, utilize the laser grooving and scribing processing procedure in p-i-n knot 320 and back contact 350, to form groove 381C.
On the one hand; Temperature when expectation utilizes active temperature control hardware assembly to guarantee that equipment substrate 303 gets into delineation modules 220 be about 20 ℃ to about 26 ℃ scope, this active temperature control hardware assembly can contain resistance heater and/or cooling package (for example heat exchanger, thermal power unit).In one embodiment, the temperature of expectation control appliance substrate 303 is about 25 ± 0.5 ℃.
Next; Equipment substrate 303 is sent to solar cell device isolates module 222; Isolate in the module 222 equipment substrate 303 actuating equipment isolation step or steps 122 at this; On substrate 302, form a plurality of less solar cells 300 (for example reference symbol 300A-300D) with the zone of separating sedimentary deposit, shown in Fig. 3 C and Fig. 3 D.In step 122, utilize material to remove step (for example laser ablation processing procedure) and remove substrate 302 lip-deep materials.Shown in Fig. 3 C, material removes device through being configured to remove the material of fringe region 385 and cutting regions (sectioning area) 386, to form less solar cell 300A-300D.Cutting regions 386 through configuration so that two or the solar cell 300 of a plurality of shapings each other electrically with the entity isolation.After processing; Fringe region 385 is deposited on the solar cell 300 that substrate 302 lip-deep materials (for example layer 310-350) are isolated with formation with cutting regions 386 general neither containing, and makes grafting material 360 in subsequent processing steps (step 132), form the joint to substrate 302 surfaces.In one embodiment, to about 15mm, and the width of cutting regions 386 is between about 10mm about 30mm extremely between about 5mm for the width of fringe region 385, and wherein these width are to measure with the mode that is parallel to substrate 302.In one embodiment, the about 10mm of the width of fringe region 385, and the about 20mm of the width of cutting regions 386.
In one embodiment, use neodymium: vanadate (Nd:YVO4) or Nd:YAG lasing light emitter come corrode to fall substrate 302 lip-deep materials, to form the zone less solar cell 300A-300D are electrically insulated from each other.In one embodiment; Performed laser ablation step uses the pulse laser of 1064nm wavelength to come one patterned to be disposed at the material on the substrate 302 in the step 122; So that a plurality of less solar cell 300 that is formed on the substrate 302 is isolated from each other, isolate the edge of each less solar cell 300 simultaneously.Shown in Fig. 3 E, in one embodiment, utilize the laser ablation processing procedure to form groove 381D through tco layer 310, p-i-n knot 320 and back contact 350.In another embodiment, spray cutting tool or diamond with water and delineate edge isolation is provided, and a plurality of less solar cells 300 are isolated from each other.In one embodiment, use the 5.7m that Applied Materials supplied
2Substrate laser corrode module come accurate corrode to go out the desired regions of equipment substrate 303.
On the one hand; Expectation utilize active temperature control hardware assembly guarantee equipment substrate 303 get into the temperature of solar cell device when isolating modules 222 be about 20 ℃ to about 26 ℃ scope, this active temperature control hardware assembly can contain resistance heater and/or cooling package (for example heat exchanger, thermal power unit).In one embodiment, the temperature of expectation control appliance substrate 303 is about 25 ± 0.5 ℃.
Next; Equipment substrate 303 is transferred into quality assurance module 224; In this quality assurance module 224, step 124 (or quality assurance and/or shunting remove step) is carried out in the zone of equipment substrate 303; Guaranteeing that formed equipment can meet required quality standard on the substrate surface, and can in the part situation, revise the defective in the formed equipment.In one embodiment, equipment substrate 303 through analyzing and processing region has comprised formed each independent battery (the for example independent battery 382A-382B among Fig. 3 E) in each of a plurality of less solar cells 300 (for example reference symbol 300A-300D).In step 124, utilize the sniffer of one or more substrate contacts probe to measure the quality and the material behavior of formed solar cell device.In one embodiment, the p-i-n knot place of the low amount of quality assurance module 224 projections light to solar cell, and use said one or more probe to measure the output of battery, to confirm the electric characteristics of formed solar cell device.
When module detected the defective in the formed equipment, it can carry out corrective action with the defective in the formed less solar cell 300 on the corrective substrate 303.In one embodiment, if find short circuit or other similar defectives, the interregional reverse biased that applies that then can be on substrate surface forms the zone with control and/or one or more defectives of revising solar cell device.During revising processing procedure, reverse biased generally can be sent an enough high voltage, so that the defective in the solar cell is able to revised.In one example; If between the zone that is assumed to be insulation on the equipment substrate 303, find short circuit, then the amplitude with reverse biased is elevated to conductivity element generation phase transformation, the decomposition in the scope that can make between insulating regions or becomes the degree that can eliminate or lower electrical short intensity that is adjusted into.
In an embodiment who handles processing procedure 100, using character guarantees the quality problem that module 224 and factory's automatic system are found at the quality assurance test period with solution in formed equipment substrate 303 together.In a kind of situation; Equipment substrate 303 is gone back to the upper reaches of handling procedure by foldback, equipment substrate 303 is repeated one or more manufacturing steps (for example the back of the body contact isolation step (step 120)) to revise one or more quality problem relevant with treated equipment substrate 303.
Next; Equipment substrate 303 is transferred into cleaning module 226; Clean in module 226 to equipment substrate 303 execution in step 126 (or range upon range of preceding (pre-lamination) cleaning), to remove formed a plurality of less solar cell 300 lip-deep any pollutants on equipment substrate 303 at this.Generally speaking, cleaning module 226 uses wet chemistry to scrub and rinsing step, to remove any undesired pollutant on substrate surface.In one embodiment; Equipment substrate 303 is carried out the cleaning processing procedure similar with the processing of step 106, go up any pollutant at (the for example front surface and the edge of fringe region 385, cutting regions 386, the back of the body contact area 350, groove 381C and substrate 302) to remove substrate 303 surfaces.In one embodiment, after step 126, the different piece of fringe region 385 or cutting regions 386 is carried out optical detection or conductivity test, remove with the material of guaranteeing all expectations.In an embodiment of handling procedure 100, elder generation is to equipment substrate 303 execution in step 126 before execution in step 124.
Next, substrate 303 is transferred into and engages wiring attaching (bonding wire attach) module 228, attaches in the module 228 equipment substrate 303 execution in step 128 (or engaging the attaching step that connects up) in this joint wiring.Step 128 is pasted to formed less solar cell device on the substrate 302 in order to will connect the required various wiring/leads of the electrical assembly in various outsides.Generally speaking, engaging wiring, to attach module 228 are self routing joining tools, and this instrument connects in order to reliably and apace to be formed on to form in the production line 200 in required many of solar cell 300.In one embodiment, engaging wiring attaches module 228 and is used on each less solar cell 300 that (step 118) forms side connecting plate 355 (Fig. 3 C) and cross connecting plate 356 on the formed back of the body contact area.In this configuration, side connecting plate 355 is conductive materials, and the back contact 350 of back of the body contact area can be fixed, attaches and/or be welded to this conductive material, to form good electrical contact.
In one embodiment; Side connecting plate 355 respectively comprises a sheet metal (metal strip) with cross connecting plate 356, for example the copper strips of the copper strips of the nickel strap of the silver band of copper strips, coating nickel, silver coated, coating tin, coating nickel or can pass carry electric current that each solar cell sends and can with other conductive materials of metal level positive engagement in the back of the body contact area.In one embodiment, between about 10mm, and thickness is between about 1mm and about 3mm between about 2mm for the width of sheet metal.Be electrically connected at the knot place side connecting plate 355 cross connecting plate 356 insulating material 357 capable of using (for example insulating tape) and with back contact 350 electric insulations of each less solar cell 300, shown in Fig. 3 C.The end of each cross connecting plate 356 has one or more lead usually; This lead is in order to be connected to being electrically connected in the terminal box 370 with side connecting plate 355 with cross connecting plate 356, and wherein terminal box 370 is in order to be connected to formed solar cell other external electric assemblies.
In step 130, preparation grafting material 360 (Fig. 3 D) forms in the processing procedure (that is handling procedure 100) for sending into solar cell with " back of the body glass " substrate 361.The general execution of preparation processing procedure is on glass putting (glass lay-up) module 230, and this module 230 of putting on glass comprises material preparation module 230A, glass loading module 230B and cleaning glass module 230C usually.Back of the body glass substrate 361 utilizes range upon range of processing procedure (following step 132) and is bonded on the formed equipment substrate 303 of above-mentioned steps 102-128.Generally speaking; Step 130 needs the preparation polymeric material; This polymeric material will be placed between the sedimentary deposit on back of the body glass substrate 361 and the equipment substrate 303 (this equipment substrate 303 has fringe region formed thereon 385 and cutting regions 386), in subsequent step (step 132), between back of the body glass 361 and exposed substrate 302 surface portions, to form sealing.Formed sealing can avoid environment that it is encroached in its length of life after each less solar cell 300A-300D (Fig. 3 C) has separated in subsequent processing steps (step 140).
With reference to Fig. 1 and Fig. 2, step 130 comprises a series of substep usually.At first, preparation one grafting material 360 in material preparation module 230A.Then grafting material 360 is placed on the equipment substrate 303.Secondly, will carry on the back glass substrate 361 and be written among the glass loading module 230B, and utilize cleaning module 230C to clean.At last, will carry on the back glass substrate 361 is placed on grafting material 360 and the equipment substrate 303.
In one embodiment; Utilize material preparation module 230A to receive the grafting material 360 of sheet form; And it is carried out one or more cutting operations so that grafting material to be provided, for example the polyethylene butyraldehyde (Polyvinyl Butyral, PVB) or ethylene-vinyl acetate copolymer (Ethylene Vinyl Acetate; EVA), this material is through adjusting the surface that size disposes the substrate 302 of sedimentary deposit (for example reference symbol 310-350) with covering.Generally speaking; When the grafting material that uses 360 during as polymer; Store grafting material 360 in the expectation control manufacture of solar cells line 200 and it be integrated into the temperature (for example 16-18 ℃) and relative humidity (for example RH 20-22%) at solar cell device place, with guarantee to engage form in the module 232 attribute that engages be repeatably and the size of polymeric material be stable.Grafting material is being used in temperature and humidity through the control area (for example T=6-8 ℃; RH=20-22%) be to need to store as last.When forming the large-sized solar battery, the tolerance limit amount of stacking of various assemblies can be a problem in the coupling device (step 132).Therefore, must accurately control the character of grafting material and the tolerance limit of cutting processing procedure, to guarantee to form reliable sealing.In one embodiment; It is favourable using PVB, and this is because of its UV stability, moisture resistance, thermal cycle property, good US fire resistance rating (fire rating), meets international building technical regulation (International Building Code), low-cost and reproducible thermoplastic properties is dies.
In the part of step 130, utilize automatic robot's device to transmit and locating engagement material 360 in the back contact 350 of equipment substrate 303, side connecting plate 355 (Fig. 3 C), with cross connecting plate 356 (Fig. 3 C) equipment of etc.ing above.Equipment substrate 303 then is positioned to receive back of the body glass substrate 361 with grafting material 360, wherein carries on the back the glass substrate 361 automatic robot device identical with being used for locating engagement material 360 capable of using or one second automatic robot's device and places on it.
In one embodiment; To carry on the back before glass substrate 361 is positioned above the grafting material 360; Earlier back of the body glass substrate 361 is carried out one or more preparation processes, can form like expection to guarantee follow-up sealing processing procedure and final solar product, in a kind of situation; Back of the body contact substrate 361 is received with " green state (" raw " state) ", and wherein the edge of substrate 361, whole size and/or cleanliness factor are all without excellent control.Receive the cost that " raw material " substrate has reduced preparation and storage substrate before forming solar facilities, and thereby reduced the production cost of cost, facility cost and the final solar cell device that forms of solar cell device.In an embodiment of step 130, before carrying out back of the body glass substrate cleaning, preparation back of the body glass substrate 361 surfaces and edge in sewing up module (for example front end is sewed up module 204).In the next substep of step 132, back of the body glass substrate 361 is sent to cleaning glass module 230C, in cleaning glass module 230C, substrate 361 is carried out the board cleaning step, to remove lip-deep any pollutant of substrate 361.Common pollutant can be included in the substrate formation processing procedure (for example glass manufacturing processing procedure) and/or during substrate 361 transports, be deposited on the material on the substrate 361.Generally speaking, cleaning glass module 230C use wet chemistry scrub with rinsing step remove above-mentioned in any undesired pollutant.Then, prepared back of the body glass substrate 361 utilizes automatic robot's device and is placed on the top of grafting material 360 and equipment substrate 303.
Next; Equipment substrate 303, back of the body glass substrate 361 are sent to grafting material 360 and engage module 232; In engaging module 232, carry out range upon range of step (or step 132), be engaged to formed equipment substrate 303 among the above-mentioned steps 102-130 will carry on the back glass substrate 361.In step 132, grafting material 360 (for example PVB or EVA) is interposed between back of the body glass substrate 361 and the equipment substrate 303; Utilize the various firing equipments and other devices that engage in the module 232 that this structure is applied heat and pressure, to form through engaging and apparatus for sealing.
Then; Composite solar battery structure 304 is sent to autoclave (autoclave) module 234; In autoclave module 234 to composite solar battery structure 304 execution in step 134 (or autoclave step), to remove the gas and guarantee to form good bond of being captured in the connected structure.In step 134; Composite solar battery structure 134 is planted in the processing region of autoclave module 234; Its heat is delivered to this with gases at high pressure and sentences reduction seizure gas flow, and promotes the engagement characteristics between equipment substrate 303, back of the body glass substrate 361 and the grafting material 360.Performed processing helps also to guarantee that the stress in glass and the knitting layer (for example PVB layer) is controlled in autoclave module 234, fails or the glass fault because of the stress that is induced during the joint/range upon range of processing procedure causes sealing to avoid following.In one embodiment, expectation firing equipment substrate 303, back of the body glass substrate 361 reach the temperature that can make the Stress Release of one or more assembly in the composite solar battery structure 304 with grafting material 360.
Then, composite solar battery structure 304 is delivered to terminal box attach module 236, attach in the module 236 in terminal box composite solar battery structure 304 is carried out terminal box attaching step 136.Employed terminal box attaching module 236 is used on formed each less solar cell 300 on the substrate 302, installing a terminal box 370 (Fig. 3 C) in the step 136; The terminal box 370 that warp is installed is as the interface between the formed internal electrical tie point (for example lead) in outside electrically assembly (for example other solar cell or electrical network) that will be connected to each formed battery and the step 128.In one embodiment, terminal box 370 contains one or more tie point 371,372, so each formed solar cell can be easily and systemicly be connected to other external equipments, the electric power that is produced to send.
Next; Composite solar battery structure 304 is sent to testing of equipment module 238; In testing of equipment module 238,, meet the quality standard of expectation to guarantee in composite solar battery structure 304 formed equipment to composite solar battery structure actuating equipment screening and analytical procedure 138.In one embodiment, testing of equipment module 238 is solar simulator modules, and this solar simulator module is used for authentication and tests the output of one or more formed less solar cell 300.In step 138, use a light emitting source and sniffer, utilize in order to terminal box 370 in terminal produce the output that one or more automatic component of electrically contacting is measured formed less solar facilities 300.When this module detected the defective in formed equipment, it can carry out corrective action, or in subsequent step (that is step 140), when other less solar cells are cut section, can it be discarded when specific less solar cell 300.
Then; Composite solar battery structure 340 can randomly be sent to cut cuts module 240; Cut a step 140 and composite solar battery structure 304 is cut be truncated into a plurality of less solar cells 300 cutting to cut to utilize in the module 240 to cut, to form a plurality of less solar cell device.In one embodiment, cut a section composite solar battery structure 304 along reference line X-X shown in Fig. 3 C and Y-Y.In one embodiment, reference line X-X and Y-Y are positioned at the mid point of cutting regions 386 in fact.In one example; Fringe region 385 is wide for 10mm, cutting regions is that the wide composite solar battery structure 304 of 20mm can make a plurality of formed less solar cells 300 respectively have the wide fringe region of 10mm 385, and these fringe regions 385 are round the movable part of solar cell 300.In an embodiment of step 140; Composite solar battery structure 340 is used cutting of CNC glass-cutting instrument to cut in the module 240 by planting to, with accurate cutting and cut and cut composite solar battery structure 304 and form the solar cell device with expectation size.In one embodiment, composite solar battery structure 304 is planted to and is used cutting of laser cutting device to cut in the module 240, with accurate cutting and cut and cut composite solar battery structure 304 and form the solar cell device with expectation size.In one embodiment, composite solar battery structure 304 is planted to and is used cutting of glass-painting the Line tool to cut in the module 240, with the surface of accurate delineation equipment substrate 302 with back of the body glass substrate 361.Then fracture or laser cutting composite solar battery structure 304 along the delineation circuit, with produce expectation size and quantity being completed into and through the solar cell device of test.
In one embodiment, manufacture of solar cells line 200 is in order to accept (step 102) and to handle 5.7m
2Or bigger substrate 302 or equipment substrate 303.In one embodiment, these large-area substrates 302 can be handled fully in step 142, cut then and be truncated into four 1.4m
2Equipment substrate 303.In one embodiment, the solar cell device of system design for handling main equipment substrate 303 (for example being coated with 2200mm * 2600mm * 3mm glass of TCO) and under the situation that does not increase equipment or treatment step, producing all size.Present amorphous silicon (a-Si) film factory must have a production line to the solar cell device of each different size.In the present invention, production line 200 can be minimum or do not have and make different solar cell device sizes under the situation of change-over time.In one aspect of the invention; Production line can be by forming solar cell device and then cut and cut substrate forming the solar cell of preferable smaller szie on single large substrate, and high solar battery apparatus treating capacity (generally being in megawatt/every year (MW/per year)) is provided.
The flexibility of using single input to produce output in solar energy film industry is unique, and it has obviously been saved capital expenditure and has reduced processing complexity.Because solar cell device manufacturer can buy the solar cell device that a large amount of single glass sizes are produced all size, thereby the material cost of input glass is also lower.In following " cut and cut module and processing ", cutting of further explain example cut module 240.
Then; Each composite solar battery structure 304 can randomly be transferred into rear end stitching module 242, and the edge that in this rear end stitching module 242, utilizes stitching (seaming) step 142 to prepare each composite solar battery structure 304 damages possibility (for example collapsing of composite solar battery structure 304 considered to be worth doing or the crack generation) to reduce.In one embodiment, module 242 is sewed up in order to the edge of rounding composite solar battery structure 304 or make it become the inclined-plane in the rear end.In one embodiment, use is full of the belt body of diamond or the material that video disc grinds away composite solar battery structure 304 edges.In another embodiment, use abrasive wheel, blasting treatment or laser ablation technology to remove the material at composite solar battery structure 304 edges.
Then; Each composite solar battery structure 304 is sent to supporting construction module 244; In supporting construction module 244, each composite solar battery structure 304 is carried out supporting construction fixing step 144; So that complete solar cell device to be provided, this solar cell device has one or more retaining element (mounting element) that is pasted to the formed composite solar battery structure 304 of step 102-142, and can fix easily and Fast Installation at the client place.
Then, composite solar battery structure 304 is transferred into unloading module 246, and execution in step 146 (or equipment unloading step) in unloading module 246 is to remove formed less solar cell 300 from manufacture of solar cells line 200.
In an embodiment of manufacture of solar cells line 200, in order to reduce or to avoid pollutant effect solar cell device yield and probable life, one or more zone in the production line is arranged in clean room environment.In one embodiment, as shown in Figure 2, in the placed around grade of the module that is used for execution in step 108-118 and step 128-132 10000 clean room space 250.
Cut and cut module and processing procedure
Cut cut cutting in the step 140 cut module 240 and handling procedure in order to will be large-scale treated with cut the less composite solar battery structure 304 that is truncated into more than two, respectively contains a less solar cell 300 through the composite solar battery structure 304 of testing.In one embodiment, cut and cut the composite solar battery structure 304 that module 240 receives 2600mm * 2200mm, and it is cut be truncated into the treated of two 1300mm * 2200mm and test compound solar battery structure 304.In one embodiment, cut and cut the composite solar battery structure 304 that module 240 receives 2600mm * 2200mm, and it is cut the composite solar battery structure 304 that is truncated into the treated of two 2600mm * 1100mm and test.In one embodiment, cut and cut the composite solar battery structure 304 that module 240 receives 2600mm * 2200mm, and it is cut the composite solar battery structure 304 that is truncated into the treated of four 1300mm * 1100mm and test.
In one embodiment, system controller 290 (Fig. 2) control cuts the cutting of composite solar battery structure 304 that module 240 produced and cuts section quantity and size by cutting.Therefore; All downstream processing procedures in 290 pairs of programs 100 of system controller (Fig. 1) send instruction to coordinate processing procedure and adjustment to the downstream module; With adapt to and further treatment substrate cut and cut the cutting of composite construction 304 that module was produced and cut a section, no matter produced cut cut section size why.
Fig. 4 A-4E looks sketch map on being, this schematic view illustrating cut an embodiment who cuts module 240 according to substrate and cut the program of cutting a composite solar battery structure 304.With reference to Fig. 4 A, pan feeding conveyer 410 is delivered to setting-out station (scoring station) 420 with composite solar battery structure 304.In one embodiment, back of the body glass substrate 361 faces down towards last and substrate 302, shown in Fig. 5 A-5C.Setting-out station conveyer 422 is positioned composite solar battery structure 304 for carry out in the setting-out station 420 setting-out.In setting-out station 420, shown in Fig. 4 B, cut according to the sequencing of composite solar battery structure 304 cut, via setting-out mechanism 424 with a pattern setting-out on the upper surface of back of the body glass substrate 361 and substrate 302.In one embodiment, pan feeding conveyer 410, setting-out station conveyer 422 and setting-out mechanism 424 are through system controller 290 (Fig. 2) control and coordinated with each other with other operations in the program 100 (Fig. 1).
In one embodiment, setting-out mechanism 424 is mechanical type setting-out mechanisms, for example mechanical type setting-out wheel.In one embodiment, setting-out mechanism 424 is optical profile type setting-out mechanism, for example laser setting-out mechanism.
Composite solar battery structure 304 through setting-out then partly is sent to cross transfer station 430 via setting-out station conveyer 422, shown in Fig. 4 C.The first transfer station conveyer 432 is coordinated with setting-out station conveyer 422 via system controller 290, with suitable positioning equipment substrate 303.Fig. 5 A-5C illustrative (breaking) the processing procedure that is used to according to an embodiment of the invention fracture through the composite solar battery structure 304 of setting-out.With reference to Fig. 4 C and Fig. 5 A, be positioned at a roller bearing 426 tops and a roller bearing 427 belows through the composite solar battery structure 304 of setting-out, make to be located immediately at roller bearing 426 tops and roller bearing 427 belows along the drawn line of X axle.Then reduce roller bearing 427, and the upper surface of its placement with back of the body glass substrate 361 contacted.Such as Fig. 5 B signal explanation, roller bearing 427 be lowered and along drawn circuit to apply an active force perpendicular to the composite construction plane, make the glass substrate 302 to produce the thoroughly fracture of (clean) along drawn circuit.Roller bearing 426 and its placement contacted with the lower surface of substrate 303 then raises; Such as Fig. 5 C signal explanation; Roller bearing 426 is raised and applies a lifting active force along drawn circuit to the lower surface of composite solar battery structure 304 and perpendicular to the plane of composite solar battery structure 304, makes back of the body glass substrate 361 produce fracture completely along drawn circuit.
In one embodiment, roller bearing 426 and 427 is along the length of composite solar battery structure 304 and the cushioning cylindrical roller that extends.Roller bearing 426 is raise by actuator 428, and roller bearing 427 is to be reduced by actuator 429.In one embodiment, actuator 428 respectively is electrodynamic type, fluid pressure type or vapour-pressure type motor with actuator 429.In one embodiment, actuator 428 respectively is fluid pressure type or vapour-pressure type cylinder with actuator 429.In one embodiment, actuator 428 is respectively controlled by system controller 290 with actuator 429 and is coordinated.
Then, shown in 4D figure, the composite construction section 304A of composite solar battery structure 304 is written in the cross transfer station (cross transfer station) 430 via the first transfer station conveyer 432 fully.Then, the discharging conveyer 440 and the second transfer station conveyer 434 are united composite construction section 304A partly are sent on the discharging conveyer 440, shown in 4E figure.The second transfer station conveyer 434 is coordinated via system controller 290 and discharging conveyer 440, with suitable location composite construction section 304A.With reference to 4E figure and Fig. 5 A, composite construction section 304A is positioned roller bearing 426 tops and roller bearing 427 belows, makes to be located immediately at roller bearing 426 tops and roller bearing 427 belows along the drawn line of Y axle.Then reduce roller bearing 427, its upper surface with composite construction section 304A is contacted.Such as Fig. 5 B signal explanation, roller bearing 427 reduces and applies an active force along drawn route and perpendicular to the plane of composite construction section 304A, makes glass substrate 302 produce fracture completely.Roller bearing 426 and its placement contacted with the lower surface of composite construction section 304A then raises.Such as Fig. 5 C signal explanation; Roller bearing 426 raises and applies a lifting active force along drawn circuit to the lower surface of composite construction section 304A and perpendicular to the plane of composite construction section 304A, makes back of the body glass substrate 361 produce fracture completely along drawn circuit.Therefore, composite construction section 304A is cut and is truncated into two less composite construction section 304C and 304D.Then with discharging conveyer 440 each composite construction section 304C and 304D are sent to a follow-up module further to handle (step 142-146) via the second transfer station conveyer 434.Then composite construction section 304B is repeated above-mentioned processing procedure.
In one embodiment, be different from the above-mentioned operation that fractures, composite solar structure 304 is cut via the laser cutting processing procedure and is cut.Fig. 6 is the illustrative of cutting the laser cutting device 600 that cuts composite solar battery structure 304 along a score road.Laser cutting device 600 can comprise laser 606 and be used for moving laser 606 transfer devices 616, and wherein laser 606 is positioned composite solar battery structure 304 tops and/or composite solar battery structure 304 belows.In one embodiment, laser 606 is carbon dioxide lasers, and this carbon dioxide laser can send the continuous radiation ripple, and main wavelength band concentrates on about 9.4 μ m and about 10.6 μ m.Transfer device 616 can be any suitable linear actuators, for example linear servo motor etc.In one embodiment, transfer device 616 is by controller 290 controls, with the cutting speed of control laser 606.
In one embodiment, after carrying out above-mentioned each operation that fractures, need the grafting material 360 between further glass-cutting substrate 302 and the back of the body glass substrate 361, being cut the less solar cell 300 that cuts to guarantee can entity separation.In one embodiment, the cutting processing procedure of grafting material 360 utilizes cutter sweep (not shown, like cutter, saw device, cutting wheel, laser or other similar devices) and carries out in cutting section module 240.In one embodiment,, all operations that fracture carry out another cutting step of grafting material 360 after all carrying out.In another embodiment, carry out the substrate cut processing procedure after fractureing operating procedure each intermittence, for example after fractureing operation the first time shown in Fig. 4 C and execution once more after fractureing operation the second time shown in the 4E figure.
Though the foregoing description explanation is that single composite solar battery structure 304 is cut four processing procedure and the equipment than away minor segment that are truncated into; What should know is; By adjustment setting-out mechanism 424 for only on X axle or Y axle, depict a line and only execution once fracture or cut processing procedure, this embodiment also can be used for equivalently single composite solar battery structure 304 cut and is truncated into two than away minor segment.
Though what above stated specification was directed against is embodiments of the invention, can under the situation that does not deviate from base region of the present invention, know other embodiment of the present invention by inference, scope of the present invention is limiting as attaching claim.
Claims (15)
1. system that is used to make solar cell device comprises:
Substrate receives module, and this substrate receives module in order to receive a prebasal plate;
Cluster tool, this cluster tool has treatment chamber, this treatment chamber in order to the depositing silicon layer on the surface of said prebasal plate;
Back of the body contact deposition chambers, this back of the body contact deposition chambers is through being configured on said silicon-containing layer, to deposit back contact;
Engage module, this joint module is through being configured to that said silicon-containing layer and said back contact between a said prebasal plate and the back of the body substrate are packaged into composite construction;
Cut and cut a module, this is cut and cuts module and be cut into two or more a plurality of section through being configured to said composite construction cut; And
System controller, this system controller are used for controlling and coordinate said substrate and receive module, said cluster tool, said treatment chamber, said back of the body contact deposition chambers, said joint module and said each function of cutting section module.
2. the system of claim 1, wherein said cutting cut a module and comprised:
The setting-out station, this setting-out station is through being configured to line delineation to a surface of said composite construction;
The guillotine cutter structure, this guillotine cutter structure through the configuration so that said composite construction along said line splitting; And
Detent mechanism, this detent mechanism is used to locate said composite construction, makes that the line in delineation to the said substrate aligns with said guillotine cutter structure essence.
3. system as claimed in claim 2, wherein said guillotine cutter structure is a laser cutting device, this laser cutting device comprises laser and laser positioning mechanism.
4. system as claimed in claim 2, wherein said guillotine cutter structure is a cutting-off mechanism, this cutting-off mechanism comprise roller bearing with through being configured to locate the actuator of this roller bearing.
5. system that is used to make solar cell device, it comprises:
Substrate receives module, and this substrate receives module in order to receive prebasal plate;
Cluster tool, this cluster tool has treatment chamber, and this treatment chamber is in order to deposit a silicon layer on the surface of said prebasal plate;
Back of the body contact deposition chambers, this back of the body contact deposition chambers is through being configured to deposit back contact on said silicon-containing layer;
Engage module, this joint module is through being configured to that said silicon-containing layer and said back contact between a said prebasal plate and the back of the body substrate are packaged into composite construction;
The test module, this test module is through being configured to test the performance characteristics of said composite construction;
Cut and cut a module, this is cut and cuts module through being configured to be cut into two or more a plurality of section with cutting through the said composite construction of test, and wherein this is cut and cuts a module and comprise composite construction detent mechanism and composite construction guillotine cutter structure; And
System controller, this system controller be used for controlling and coordinate said substrate receive module, said cluster tool, said treatment chamber, said back of the body contact deposition chambers, said joint module, said test module, with said each the function of cutting module of cutting.
6. system as claimed in claim 5, wherein said composite construction detent mechanism comprises:
Pan feeding conveyer, this pan feeding conveyer be through being configured to receive instruction from said system controller, and said composite construction is sent to said cutting in the setting-out station of cutting module; And
First positioner, this first positioner be through being configured to receive instruction from said system controller, and said composite construction through setting-out is cut with respect to first of said guillotine cutter structure cut a device and accurately locate.
7. system as claimed in claim 5, wherein said first cuts that to cut a device be laser cutting device, and this laser cutting device comprises laser and laser positioning mechanism.
8. system as claimed in claim 5, wherein said first cuts that to cut a device be cutting-off mechanism, and this cutting-off mechanism comprises roller bearing and roller bearing detent mechanism.
9. system as claimed in claim 5, wherein said composite construction detent mechanism also comprises:
Second positioner, this second positioner be through being configured to receive instruction from said system controller, and a section that makes said composite construction through setting-out is cut with respect to second of said guillotine cutter structure and cut a device and accurately locate; And
Discharging conveyer, this discharging conveyer be through being configured to receive instruction from said system controller, and the some of the said section of said composite construction through setting-out is sent out said cutting cut a module.
10. system as claimed in claim 9, wherein said second cuts that to cut a device be laser cutting device, and this laser cutting device comprises laser and laser positioning mechanism.
11. system as claimed in claim 9, wherein said second cuts that to cut a device be cutting-off mechanism, and this cutting-off mechanism comprises roller bearing and roller bearing detent mechanism.
12. a method of handling solar cell device, it comprises following steps:
Clean substrate removes one or more pollutant with the surface from this substrate;
The deposition light absorbing zone is on the said surface of said substrate;
Remove at least a portion of said light absorbing zone from a said lip-deep zone of said substrate;
The deposition back contact is on the said light absorbing zone on the said substrate;
Remove at least a portion of said back contact and said light absorbing zone from a said lip-deep zone of said substrate;
Engage back of the body glass substrate to said substrate, to form composite construction, wherein said back contact and said light absorbing zone are engaged between said back of the body glass substrate and the said substrate;
One or more terminal box is pasted to said composite construction;
Test the performance characteristics of said composite construction; And
Said composite construction cut be cut into two or more a plurality of section.
13. method as claimed in claim 12 is wherein cut a section said composite construction and is comprised following steps: cuts said composite construction with the CNC glass cutter.
14. method as claimed in claim 12 is wherein cut a section said composite construction and is comprised following steps: cuts said composite material with laser cutting device.
15. method as claimed in claim 12 is wherein cut and is cut a said composite construction and comprise following steps: delineation one or many lines in one or more surface of said composite construction, and cut along one or many lines of being delineated and to cut a said composite construction.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/430,755 US20100273279A1 (en) | 2009-04-27 | 2009-04-27 | Production line for the production of multiple sized photovoltaic devices |
| US12/430,755 | 2009-04-27 | ||
| PCT/US2010/030560 WO2010129136A2 (en) | 2009-04-27 | 2010-04-09 | Production line for the production of multiple sized photovoltaic devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102396082A true CN102396082A (en) | 2012-03-28 |
Family
ID=42992506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800172972A Pending CN102396082A (en) | 2009-04-27 | 2010-04-09 | Production line for the production of multiple sized photovoltaic devices |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20100273279A1 (en) |
| CN (1) | CN102396082A (en) |
| TW (1) | TW201101527A (en) |
| WO (1) | WO2010129136A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105676769A (en) * | 2016-01-04 | 2016-06-15 | 武汉华星光电技术有限公司 | Method for switching products on production line |
| CN112313788A (en) * | 2018-06-11 | 2021-02-02 | 密德萨克斯工业公司 | High volume autonomous material handling system to improve integrated circuit factory throughput and cycle time |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593256B (en) * | 2012-03-02 | 2014-07-09 | 江苏宇天港玻新材料有限公司 | Integrated CIGS (copper indium gallium diselenide) film solar battery production equipment and production method thereof |
| US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
| WO2016131190A1 (en) * | 2015-02-17 | 2016-08-25 | Solarcity Corporation | Method and system for improving solar cell manufacturing yield |
| DE102015009004A1 (en) | 2015-06-05 | 2016-12-08 | Solaero Technologies Corp. | Automated arrangement and mounting of solar cells on panels for space applications |
| US20160359080A1 (en) | 2015-06-07 | 2016-12-08 | Solarcity Corporation | System, method and apparatus for chemical vapor deposition |
| CN105870030A (en) * | 2016-04-19 | 2016-08-17 | 张家港协鑫集成科技有限公司 | Production method and equipment of photovoltaic module |
| US9748434B1 (en) | 2016-05-24 | 2017-08-29 | Tesla, Inc. | Systems, method and apparatus for curing conductive paste |
| US9954136B2 (en) | 2016-08-03 | 2018-04-24 | Tesla, Inc. | Cassette optimized for an inline annealing system |
| US10115856B2 (en) | 2016-10-31 | 2018-10-30 | Tesla, Inc. | System and method for curing conductive paste using induction heating |
| CN114497276B (en) * | 2021-12-31 | 2024-02-06 | 中国华能集团清洁能源技术研究院有限公司 | Photovoltaic module production line |
| CN114975681B (en) * | 2022-04-25 | 2023-11-14 | 华创国晶(河北)新能源有限公司 | Intelligent transportation system for photovoltaic module production line |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4410558A (en) * | 1980-05-19 | 1983-10-18 | Energy Conversion Devices, Inc. | Continuous amorphous solar cell production system |
| US4773944A (en) * | 1987-09-08 | 1988-09-27 | Energy Conversion Devices, Inc. | Large area, low voltage, high current photovoltaic modules and method of fabricating same |
| US5248349A (en) * | 1992-05-12 | 1993-09-28 | Solar Cells, Inc. | Process for making photovoltaic devices and resultant product |
| US5910854A (en) * | 1993-02-26 | 1999-06-08 | Donnelly Corporation | Electrochromic polymeric solid films, manufacturing electrochromic devices using such solid films, and processes for making such solid films and devices |
| JPH11238897A (en) * | 1998-02-23 | 1999-08-31 | Canon Inc | Solar cell module and manufacture thereof |
| US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
| US6455347B1 (en) * | 1999-06-14 | 2002-09-24 | Kaneka Corporation | Method of fabricating thin-film photovoltaic module |
| US6423565B1 (en) * | 2000-05-30 | 2002-07-23 | Kurt L. Barth | Apparatus and processes for the massproduction of photovotaic modules |
| US6784361B2 (en) * | 2000-09-20 | 2004-08-31 | Bp Corporation North America Inc. | Amorphous silicon photovoltaic devices |
| US20050072455A1 (en) * | 2002-04-04 | 2005-04-07 | Engineered Glass Products, Llc | Glass solar panels |
| AU2003275239A1 (en) * | 2002-09-30 | 2004-04-23 | Miasole | Manufacturing apparatus and method for large-scale production of thin-film solar cells |
| KR100512128B1 (en) * | 2003-08-14 | 2005-09-05 | 한국에너지기술연구원 | Automatic arraying machine of solar cells |
| US7262115B2 (en) * | 2005-08-26 | 2007-08-28 | Dynatex International | Method and apparatus for breaking semiconductor wafers |
| KR100744761B1 (en) * | 2006-02-06 | 2007-08-01 | 현규섭 | A solar cell and a method for manufacturing thereof |
| KR20100051738A (en) * | 2007-08-31 | 2010-05-17 | 어플라이드 머티어리얼스, 인코포레이티드 | Photovoltaic production line |
-
2009
- 2009-04-27 US US12/430,755 patent/US20100273279A1/en not_active Abandoned
-
2010
- 2010-04-09 CN CN2010800172972A patent/CN102396082A/en active Pending
- 2010-04-09 WO PCT/US2010/030560 patent/WO2010129136A2/en active Application Filing
- 2010-04-19 TW TW099112208A patent/TW201101527A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105676769A (en) * | 2016-01-04 | 2016-06-15 | 武汉华星光电技术有限公司 | Method for switching products on production line |
| CN112313788A (en) * | 2018-06-11 | 2021-02-02 | 密德萨克斯工业公司 | High volume autonomous material handling system to improve integrated circuit factory throughput and cycle time |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201101527A (en) | 2011-01-01 |
| US20100273279A1 (en) | 2010-10-28 |
| WO2010129136A3 (en) | 2011-01-13 |
| WO2010129136A2 (en) | 2010-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102396082A (en) | Production line for the production of multiple sized photovoltaic devices | |
| US8024854B2 (en) | Automated solar cell electrical connection apparatus | |
| US20090077804A1 (en) | Production line module for forming multiple sized photovoltaic devices | |
| US8138782B2 (en) | Photovoltaic cell solar simulator | |
| US8049521B2 (en) | Solar parametric testing module and processes | |
| US8231431B2 (en) | Solar panel edge deletion module | |
| US20090287446A1 (en) | Photovoltaic cell reference module for solar testing | |
| US20100047954A1 (en) | Photovoltaic production line | |
| US8065784B2 (en) | Apparatus for forming an electrical connection on a solar cell | |
| EP2283523B1 (en) | Assembly line for photovoltaic devices | |
| US20090188603A1 (en) | Method and apparatus for controlling laminator temperature on a solar cell | |
| CN102422442A (en) | Method and apparatus for inspecting scribes in solar modules | |
| US20110008947A1 (en) | Apparatus and method for performing multifunction laser processes | |
| CN101541486A (en) | Production line module for forming multiple sized photovoltaic devices | |
| US20110065227A1 (en) | Common laser module for a photovoltaic production line | |
| Kagan et al. | Space qualification of amorphous silicon alloy lightweight modules | |
| TW200919761A (en) | Production line module for forming multiple sized photovoltaic devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120328 |