CN102394583B - Broadband high-gain transconductance amplifier - Google Patents
Broadband high-gain transconductance amplifier Download PDFInfo
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- CN102394583B CN102394583B CN201110334013.9A CN201110334013A CN102394583B CN 102394583 B CN102394583 B CN 102394583B CN 201110334013 A CN201110334013 A CN 201110334013A CN 102394583 B CN102394583 B CN 102394583B
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Abstract
The invention provides a broadband high-gain transconductance amplifier and relates to an electronic technology. The broadband high-gain transconductance amplifier provided by the invention comprises a primary circuit and a secondary circuit, wherein the primary circuit comprises a first connecting point, a second connecting point, four auxiliary amplifiers and a first tail current tube, and the secondary circuit comprises a third connecting point, a fourth connecting point and a second tail current tube; the first connecting point and the second connecting point are respectively connected to the grid electrode of the first tail current tube through a first capacitive circuit; the third connecting point and the fourth connecting point are respectively connected to the grid electrode of the second tail current tube through a second capacitive circuit; the grid electrode of the first tail current tube is connected to the drain electrode of the second tail current tube through a third switch; the third connecting point is connected to the positive input end of a common mode feedback amplifier through a fourth switch, and the fourth connecting point is connected to the positive input end of the common mode feedback amplifier through a fifth switch; and the output end of the common mode feedback amplifier is connected to the drain electrode of the second tail current tube through a sixth switch. The broadband high-gain transconductance amplifier provided by the invention has the advantages of faster response speed and higher gain and slew rate.
Description
Technical field
The present invention relates to electronic technology, particularly integrated circuit.
Background technology
As shown in Figure 1, the whole trsanscondutance amplifier of prior art is comprised of two-stage, to meet the requirement of high-gain, high bandwidth.The first order adopts tube-in-tube structure, and adds booster amplifier A to improve output impedance, thereby improves gain; The second level adopts common source structure for amplifying to improve the output signal amplitude of oscillation.Between first order output and second level input, added miller compensation Rc, Cc to have enough phase margins to guarantee whole amplifier.The amplifier of this structure is widely applied in high-speed & resolution ADC.Because it has adopted fully differential structure, there is very high common-mode rejection ratio, be subject to hardly the impact of common-mode noise.But need to add common mode feedback circuit CMFB with the common-mode signal that guarantees output in stable, thereby the working point of stabilizing amplifier.Common switching capacity type common-mode feedback is respectively to add respectively a common mode feedback circuit in the first order and second level output, and so not only circuit is complicated, need to add two reference voltages, and response speed is unhappy.
Fig. 2 is the physical circuit of traditional switch capacitor type common-mode feedback, and wherein Ф 1 and Ф 2 are the switches that controlled by complementary clock signal.If amplifier output K1, K2 common-mode voltage are Vcm; Ks terminal voltage is Vs.When sampling phase Ф 1=" 1 ", Cs is charged to Vb-Vcmf, Cc is sampling capacitance, its sampled common-mode voltage VcmK1 and K2 of amplifier output is amplifier positive-negative output end, Vs is common-mode feedback regulation voltage, Ks connects on amplifier tail current source capsule grid as Mn5 in Fig. 1 and Mn6, and Cc is charged to Vs-Vcm.When keeping phase time, during Ф 2=" 1 ", Cc and Cs are in parallel, carry out charge share.According to electric charge, keep weighing apparatus, if Vb-Vcmf ≠ Vs-Vcm, after charge share, the upper voltage difference of Cs is just not equal to Vb-Vcmf so, then to next Ф 1=" 1 " time, Cs is charged to again Vb-Vcmf, until the poor Vb-Vcmf that equals of Cc both end voltage.So just, reach the effect that common-mode feedback regulates.This common-mode feedback structure convergence needs a plurality of clock cycle, responds fast not.In addition, in Fig. 1, each " CMFB " needs two reference signal Vb, Vcmf, and whole amplifier just needs 4 accurate reference voltages, improved the complexity of circuit design.
Summary of the invention
Technical problem to be solved by this invention is, a kind of have response speed faster, higher gain and the trsanscondutance amplifier of slew rate are provided.
The technical scheme that the present invention solve the technical problem employing is, broadband high-gain transconductance amplifier, comprise first order circuit and second level circuit, first order circuit comprises the first tie point, the second tie point, four booster amplifiers and the first tail current pipe, second level circuit comprises the 3rd tie point, the 4th tie point and the second tail current pipe, and the first tie point and the second tie point are connected to respectively the grid of the first tail current pipe by the first condenser network; The 3rd tie point and the 4th tie point are connected to respectively the grid of the second tail current pipe by the second condenser network; The grid of the first tail current pipe is connected to the drain electrode of the second tail current pipe by the 3rd switch; The 3rd tie point is connected to the positive input of common mode feedback amplifier by the 4th switch, the 4th tie point is connected to the positive input of common mode feedback amplifier by the 5th switch, the output of common mode feedback amplifier is connected to the drain electrode of the second tail current pipe by the 6th switch; The negative input of common mode feedback amplifier is as the input port of reference voltage;
Described the first condenser network consists of the first electric capacity, the second electric capacity and the first switch, the first tie point is connected to the grid of the first tail current pipe by the first electric capacity, the second tie point is connected to the grid of the first tail current pipe by the second electric capacity, the first tie point is connected by the first switch with the second tie point; Described the second condenser network consists of the 3rd electric capacity, the 4th electric capacity and second switch, the 3rd tie point is connected to the grid of the second tail current pipe by the 3rd electric capacity, the 4th tie point is connected to the grid of the second tail current pipe by the 4th electric capacity, the 3rd tie point is connected by second switch with the 4th tie point.
Described four booster amplifiers comprise two imported single amplifiers of electric current that structure is identical, and the imported single amplifier of each electric current consists of three NMOS pipes; The drain electrode of the one NMOS pipe connects high level, and source electrode connects the drain electrode of the 2nd NMOS pipe; The source electrode of the 2nd NMOS pipe is input; The drain electrode of the 2nd NMOS pipe also connects the grid of the 3rd NMOS pipe, the source ground of the 3rd NMOS pipe, and drain electrode connects current source, and the drain electrode of the 3rd NMOS pipe is also by capacity earth, and meanwhile, the drain electrode of the 3rd NMOS pipe is output.
The invention has the beneficial effects as follows, the new switching capacity type common mode feedback loop that the present invention proposes, is simplified common-mode feedback, and response speed is faster.Improved booster amplifier of the present invention, not only makes whole trsanscondutance amplifier gain be improved, and has improved slew rate simultaneously.
Below in conjunction with the drawings and specific embodiments, the present invention is further illustrated.
Accompanying drawing explanation
Fig. 1 is the circuit diagram that adopts the wide band high-gain amplifier of traditional switch electric capacity common-mode feedback.
Fig. 2 is traditional switching capacity type common mode feedback circuit figure.
Fig. 3 is circuit diagram of the present invention.
Fig. 4 is feedback loop schematic diagram of the present invention.
Fig. 5 is the circuit diagram of booster amplifier of the present invention.
Embodiment
Broadband high-gain transconductance amplifier of the present invention comprises first order circuit and second level circuit, first order circuit comprises the first tie point K1, the second tie point K2, four booster amplifiers and the first tail current pipe Mn5, second level circuit comprises the 3rd tie point K3, the 4th tie point K4 and the second tail current pipe Mn6, it is characterized in that, the first tie point K1 and the second tie point K2 are connected to respectively the grid of the first tail current pipe Mn5 by the first condenser network; The 3rd tie point K3 and the 4th tie point K4 are connected to respectively the grid of the second tail current pipe Mn6 by the second condenser network; The grid of the first tail current pipe Mn5 is connected to the drain electrode of the second tail current pipe Mn6 by the 3rd switch S 1K; The 3rd tie point K3 is connected to the positive input of common mode feedback amplifier 100 by the 4th switch S 31, the 4th tie point K4 is connected to the positive input of common mode feedback amplifier 100 by the 5th switch S 32, the output of common mode feedback amplifier 100 is connected to the drain electrode of the second tail current pipe Mn6 by the 6th switch S 2k.
Described the first condenser network consists of the first capacitor C 11, the second capacitor C 12 and the first switch S 1, the first tie point K1 is connected to the grid of the first tail current pipe Mn5 by the first capacitor C 11, the second tie point K2 is connected to the grid of the first tail current pipe Mn5 by the second capacitor C 12, the first tie point K1 is connected by the first switch S 1 with the second tie point K2; Described the second condenser network consists of the 3rd capacitor C 21, the 4th capacitor C 22 and second switch S2, the 3rd tie point K3 is connected to the grid of the second tail current pipe Mn6 by the 3rd capacitor C 21, the 4th tie point K4 is connected to the grid of the second tail current pipe Mn6 by the 4th capacitor C 22, the 3rd tie point K3 is connected by second switch S2 with the 4th tie point K4.
Described four booster amplifiers comprise two imported single amplifiers of electric current (A1, A2) that structure is identical, and the imported single amplifier of each electric current consists of three NMOS pipes; The drain electrode of the one NMOS pipe MX1 connects high level, and source electrode connects the drain electrode of the 2nd NMOS pipe MX2; The source electrode of the 2nd NMOS pipe MX2 is input; The drain electrode of the 2nd NMOS pipe MX2 also connects the grid of the 3rd NMOS pipe MX3, the source ground of the 3rd NMOS pipe MX3, and drain electrode connects current source, and the drain electrode of the 3rd NMOS pipe MX3 is also by capacitor C k ground connection, and meanwhile, the drain electrode of the 3rd NMOS pipe MX3 is output.
Specifically, in the present invention, the grid of the tail current pipe Mn5 of the amplifier first order connects the drain electrode of the second tail current pipe Mn6, and the grid of the second tail current pipe Mn6 connects the output of common mode feedback amplifier Amp_c.The first order of amplifier and the second level have formed a feedback control loop like this, as shown in Figure 4.This loop is comprised of Mn7, Mn5, Mn1, Mn3.From first order output K2 point, to voltage difference ground, equal the gate source voltage that Vgsn7+Vgsn5(Vgsn7, Vgsn5 are respectively Mn7, Mn5).Because second level operating current is determined by bias voltage Vb2, after Vb2 is fixing, the operating current of the second level is also just fixing, has determined Vgsn7.After the grid current potential of Mn6 is determined by the common-mode feedback of the amplifier second level, the drain terminal P current potential of Mn6 pipe has just been determined, has also been determined Vgsn5; The common-mode voltage of the OUT of second level output simultaneously has also obtained determining.And first order output common mode voltage Vgsn5+Vgsn7 has also determined.The output common mode of the first order is just determined immediately when second level output common mode is determined like this, has improved like this response speed of common-mode feedback, and a reference voltage V ref only need to be provided.
Specific works process of the present invention is as follows:
During application, when amplifier is in sampling phase time, switch S 1, S2, S3, S1k, S2k are all closed, common mode feedback amplifier output connects Mn6 grid, has determined its grid voltage, because second level electric current is fixed, P point current potential is just determined, Mn6 misses Mn5 grid, has so just determined Mn5 grid voltage, has also just determined first order common-mode voltage.The first order, second level output are respectively to keeping capacitor C 11, C12, C21, C22 to charge to the common-mode voltage value after determining.When amplifier is in amplifying phase time, all switches all disconnect.Because the amplifier first order, second level output are high resistant, keep capacitor C 11, C12, C21, C22 without effective discharge path, so maintained the state of sampling phase time, the first order, second level output common mode voltage are remained unchanged.In order to improve amplifier output impedance to improve gain, generally can add booster amplifier.In order not introduce complicated zero limit pair, this amplifier is single amplifier, is generally common-source amplifier or one pole folding amplifier.In order to improve the dynamic property of high-gain amplifier, the present invention improves the booster amplifier of prior art, has proposed the imported single amplifier of a kind of employing electric current and has made booster amplifier.As shown in Figure 5, metal-oxide-semiconductor Mn3 and Mn4 are connected with respectively an imported single amplifier of electric current.The imported single amplifier A1 of electric current being connected with metal-oxide-semiconductor Mn4 of take is example, and Vin is the input of the imported single amplifier A1 of electric current, the source of Mn4 in map interlinking 3; Vout is output, connects the grid of Mn4 pipe.Input branch road MX1, MX2 do not play amplification, but electric current is unfixing.And to be common source amplify on the second tunnel, amplifier tube MX3 electric current is fixed, and it is in order to adjust booster amplifier dominant pole position that output meets capacitor C k, with reduce whole amplifier zero limit on impact.In Fig. 3, when Vi-raises, Mn4 source electric potential declines, and in booster amplifier, MX2 gate source voltage increases, and this branch current increases, for Mn4 source node provides enough charging currents.Meanwhile, because MX1 electric current increases, because MX1 grid voltage is fixed, its source current potential declines, and is also that MX3 grid voltage declines, and MX3 drain terminal current potential rises so.Mn4 grid terminal potential rises like this, and its source current potential is improved, and finally reaches stable.Due in this process, booster amplifier provides extra electric current, and the slew rate of whole trsanscondutance amplifier is improved.Vb3 and Vb4 are the bias voltages of the imported single amplifier of electric current.
Specification has absolutely proved principle of the present invention and necessary technology content, and those of ordinary skill can be implemented the present invention according to specification, therefore repeat no more more concrete ins and outs.
Claims (2)
1. broadband high-gain transconductance amplifier, comprise first order circuit and second level circuit, first order circuit comprises the first tie point (K1), the second tie point (K2), four booster amplifiers and the first tail current pipe (Mn5), second level circuit comprises the 3rd tie point (K3), the 4th tie point (K4) and the second tail current pipe (Mn6), it is characterized in that, the first tie point (K1) and the second tie point (K2) are connected to respectively the grid of the first tail current pipe (Mn5) by the first condenser network; The 3rd tie point (K3) and the 4th tie point (K4) are connected to respectively the grid of the second tail current pipe (Mn6) by the second condenser network; The grid of the first tail current pipe (Mn5) is connected to the drain electrode of the second tail current pipe (Mn6) by the 3rd switch (S1K); The 3rd tie point (K3) is connected to the positive input of common mode feedback amplifier (100) by the 4th switch (S31), the 4th tie point (K4) is connected to the positive input of common mode feedback amplifier (100) by the 5th switch (S32), the output of common mode feedback amplifier (100) is connected to the drain electrode of the second tail current pipe (Mn6) by the 6th switch (S2k); The negative input of common mode feedback amplifier (100) is as the input port of reference voltage;
Described the first condenser network consists of the first electric capacity (C11), the second electric capacity (C12) and the first switch (S1), the first tie point (K1) is connected to the grid of the first tail current pipe (Mn5) by the first electric capacity (C11), the second tie point (K2) is connected to the grid of the first tail current pipe (Mn5) by the second electric capacity (C12), the first tie point (K1) is connected by the first switch (S1) with the second tie point (K2); Described the second condenser network consists of the 3rd electric capacity (C21), the 4th electric capacity (C22) and second switch (S2), the 3rd tie point (K3) is connected to the grid of the second tail current pipe (Mn6) by the 3rd electric capacity (C21), the 4th tie point (K4) is connected to the grid of the second tail current pipe (Mn6) by the 4th electric capacity (C22), the 3rd tie point (K3) is connected by second switch (S2) with the 4th tie point (K4).
2. broadband high-gain transconductance amplifier as claimed in claim 1, it is characterized in that, described four booster amplifiers comprise two imported single amplifiers of electric current (A1, A2) that structure is identical, and the imported single amplifier of each electric current consists of three NMOS pipes; The drain electrode of the one NMOS pipe (MX1) connects high level, and source electrode connects the drain electrode of the 2nd NMOS pipe (MX2); The source electrode of the 2nd NMOS pipe (MX2) is input; The drain electrode of the 2nd NMOS pipe (MX2) also connects the grid of the 3rd NMOS pipe (MX3), the source ground of the 3rd NMOS pipe (MX3), drain electrode connects current source, and the drain electrode of the 3rd NMOS pipe (MX3) is also by electric capacity (Ck) ground connection, meanwhile, the drain electrode of the 3rd NMOS pipe (MX3) is output.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110334013.9A CN102394583B (en) | 2011-10-28 | 2011-10-28 | Broadband high-gain transconductance amplifier |
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| CN201110334013.9A CN102394583B (en) | 2011-10-28 | 2011-10-28 | Broadband high-gain transconductance amplifier |
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| CN102394583B true CN102394583B (en) | 2014-07-16 |
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| CN102929319B (en) * | 2012-10-10 | 2014-09-10 | 清华大学 | Low dropout linear voltage regulator |
| CN102931932B (en) * | 2012-10-25 | 2017-11-14 | 中国科学院微电子研究所 | A kind of complementary bias differential amplifier |
| CN103259492B (en) * | 2013-05-28 | 2015-11-25 | 上海贝岭股份有限公司 | A kind of video driver output amplifier circuit |
| CN105024663B (en) * | 2014-04-18 | 2017-11-24 | 清华大学 | A kind of trsanscondutance amplifier and high robust mixer |
| CN103929138B (en) * | 2014-04-24 | 2016-08-31 | 东南大学 | A kind of operation transconductance amplifier of consumption high gain high Slew Rate |
| CN105391409B (en) * | 2015-11-11 | 2018-05-08 | 深圳大学 | A kind of low-ripple switch capacitance common mode feedback circuit |
| CN105846788B (en) * | 2016-03-25 | 2019-05-07 | 南京德睿智芯电子科技有限公司 | A kind of operational amplifier |
| TWI701902B (en) * | 2019-09-10 | 2020-08-11 | 敦泰電子股份有限公司 | Operational amplifier circuit |
| CN113922763B (en) * | 2021-12-14 | 2022-02-15 | 深圳市时代速信科技有限公司 | Two-stage amplifying circuit and electronic equipment |
| CN117439602A (en) * | 2023-12-21 | 2024-01-23 | 上海维安半导体有限公司 | Operational amplifier sharing multiple digital-to-analog conversion circuit |
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| DE10343567B3 (en) * | 2003-09-19 | 2004-11-25 | Infineon Technologies Ag | Multi-stage difference amplifier has respective regulating loops for determining load of input stage and operating point of common-mode feedback circuit between output and input stages |
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Address after: No. 2201 and 2301, floor 22-23, building 1, No. 1800, middle section of Yizhou Avenue, high tech Zone, China (Sichuan) pilot Free Trade Zone, Chengdu, Sichuan 610041 Patentee after: Chengdu Hua Microelectronics Technology Co.,Ltd. Address before: High tech Zone Gaopeng road in Chengdu city of Sichuan province 610041 No. 11 High-tech Industrial Park building D Patentee before: CHENGDU SINO MICROELECTRONICS TECHNOLOGY Co.,Ltd. |