CN102394244A - Insulated gate bipolar transistor and manufacturing method thereof - Google Patents
Insulated gate bipolar transistor and manufacturing method thereof Download PDFInfo
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- CN102394244A CN102394244A CN2011103884710A CN201110388471A CN102394244A CN 102394244 A CN102394244 A CN 102394244A CN 2011103884710 A CN2011103884710 A CN 2011103884710A CN 201110388471 A CN201110388471 A CN 201110388471A CN 102394244 A CN102394244 A CN 102394244A
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Abstract
The invention provides an insulated gate bipolar transistor (IGBT) and a manufacturing method thereof. The IGBT is composed of a collector, a drift region, an emitter electrode and a grid electrode. A groove filling region is arranged in the emitter electrode; the bottom of the groove is at the drift region and is close to a PN junction position of the emitter electrode and the drift region; and the groove filling region is filled successively with oxide, polysilicon and metal from the bottom to the top; and the metal forms a groove electrode. Besides, the groove electrode is connected with the emitter electrode. According to the invention, when the groove electrode is grounded and the collector electrode at the bottom is connected to a positive voltage, cavities will be formed by inversion at the N type drift region and a vertical bypass silicon oxide interface position; therefore, compared with the traditional structure, the structure of the IGBT enables cavity concentration at an emitter junction position to be improved. And when the IGBT is in an on state and positive voltage scanning is carried out on the collector, more cavities will participate in electric conduction, so that conductivity of the IGBT in the on state can be improved.
Description
Technical field
The present invention relates to semiconductor manufacturing and design field, more particularly, the present invention relates to a kind of insulated gate bipolar transistor and manufacturing approach thereof.
Background technology
Insulated gate bipolar transistor IGBT (Insulated Gate Bipolar Transistor) is the product that field-effect transistor (MOSFET) and bipolar transistor (BJT) combine.Its main part is identical with BJT, and collector and emitter is also arranged, and the structure of the control utmost point is identical with MOSFET, is insulated gate structure, is also referred to as grid.Insulated gate bipolar transistor has the advantage of low conduction voltage drop two aspects of high input impedance and the BJT of MOS transistor concurrently.
Fig. 1 schematically shows the structure according to the insulated gate bipolar transistor of prior art.As shown in Figure 1, general, insulated gate bipolar transistor comprises collector electrode C, emitter E and grid; Wherein, P type emitter E periphery has been arranged emitter metal electrode (for example metal aluminium electrode), has arranged gate electrode M (for example metal aluminium electrode) on the grid; There is first PN junction PN1 (being that N type doping content equals P type doping content) between P type emitter region E and the N type drift region DR, has second PN junction PN2 between N type drift region DR and the P type collector region C; There is the 3rd PN junction PN3 between between P type emitter region C and the grid.
On the one hand, the conductivity during ON state is an important electrical quantity of insulated gate bipolar transistor; On the other hand, (Breakdown Voltage BV) is another important electrical quantity of insulated gate bipolar transistor to puncture voltage.
Specifically, being defined as of puncture voltage: add positive voltage in the substrate bottom by 0 paramount scanning, (electric current generally reaches 1E to the magnitude of voltage when current multiplication
-5A/cm
2); The puncture voltage that promptly is called this device, wherein when substrate adds positive voltage, first PN junction PN1 forward conduction bottom; And second PN junction PN2 from the bottom to top oppositely exhausts, and the puncture voltage of IGBT is the reverse breakdown voltage of this second PN junction PN2 in fact.
Hope to propose a kind of insulated gate bipolar transistor that the puncture voltage BV characteristic of assurance OFF state can not be degenerated when improving the ON state conductivity.
Summary of the invention
Technical problem to be solved by this invention is to have above-mentioned defective in the prior art; A kind of insulated gate bipolar transistor structure of silica bypass is provided; Conductivity when it can improve ON state; Puncture voltage BV when OFF state can remain unchanged simultaneously, guarantees when improving the ON state conductivity that promptly the puncture voltage BV characteristic of OFF state can not degenerated.
According to a first aspect of the invention, a kind of insulated gate bipolar transistor is provided, it comprises: collector electrode, drift region, emitter and grid; Wherein, in said emitter, arranged the trench fill zone, filled oxide, polysilicon and metal from the bottom successively to the top in the said trench fill zone, said metal has formed trench electrode; And said trench electrode is connected with said emitter.Said channel bottom is positioned at the drift region, and near the PN junction place of emitter and drift region.
Preferably, said oxide is a silica.
Preferably, said metal is a metallic aluminium.
Preferably, said collector electrode is a P type collector electrode; Said drift region is N type drift region; True emitter is a P type collection emitter.
According to a second aspect of the invention, a kind of insulated gate bipolar transistor manufacturing approach is provided, has it is characterized in that comprising: at first, formed a groove at the emitter place; Then, fill oxide in groove; After this, deposit polysilicon in groove; At last, depositing metal and makes trench electrode be connected with the emitter of insulated gate bipolar transistor forming trench electrode in groove.
Preferably, said oxide is a silica.
Preferably, said metal is a metallic aluminium.
Preferably, said collector electrode is a P type collector electrode; Said drift region is N type drift region; True emitter is a P type collection emitter.
According to the present invention; As trench electrode ground connection (0V), when collector electrode bottom connects positive voltage, can transoid go out the hole at the interface with vertical bypass silica (trench fill zone) in the drift region of N type; Therefore compare with traditional structure, can improve the emitter junction place hole concentration; Therefore when ON state (grid of insulated gate bipolar transistor is opened the back) when on collector electrode, adding malleation scanning, has more hole and participates in conduction, thus the conductivity when having improved the insulated gate bipolar transistor ON state.
Description of drawings
In conjunction with accompanying drawing, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and characteristic the present invention through with reference to following detailed, wherein:
Fig. 1 schematically shows the structure according to the insulated gate bipolar transistor of prior art.
Fig. 2 schematically shows the structure according to the insulated gate bipolar transistor of the embodiment of the invention.
Need to prove that accompanying drawing is used to explain the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure possibly not be to draw in proportion.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
Embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
Fig. 2 schematically shows the structure according to the insulated gate bipolar transistor of the embodiment of the invention.
As shown in Figure 2, comprise collector electrode C, drift region DR, emitter E and grid equally according to the insulated gate bipolar transistor of the embodiment of the invention.Those skilled in the art can be provided with the mutual alignment arrangement relation of collector electrode C, drift region DR, emitter E and grid in any suitable manner.
But; Different with prior art shown in Figure 1 is; The insulated gate bipolar transistor structure of this new silica bypass that the embodiment of the invention provides is on the basis of traditional insulated gate bipolar transistor; In emitter E, arranged trench fill zone TR, filled oxide (for example silica), polysilicon and metal from the bottom successively to the top among the TR of this trench fill zone, said metal has formed trench electrode TE; And trench electrode TE is connected with the emitter E of insulated gate bipolar transistor.
In a concrete example, collector electrode C is P type collector electrode C (for example boron doping); Drift region DR is N type drift region DR; Emitter E is a P type collection emitter E.
Can form trench fill zone TR through following method:
At first, form a groove at the emitter E place;
Then, fill oxide in groove, for example silica;
After this, deposit polysilicon in groove;
At last, depositing metal and makes trench electrode TE be connected with the emitter E of insulated gate bipolar transistor forming trench electrode TE in groove; Because metallic aluminium good conductivity and low price, so metal electrode preferably adopts metallic aluminium.
After this, in test,, and can find, guarantee when said structure can be realized improving the ON state conductivity that the puncture voltage BV characteristic of OFF state can not degenerated through test with the emitter E common ground (0V) of trench electrode TE and insulated gate bipolar transistor.
Specifically; As trench electrode ground connection (0V), when collector electrode bottom connect positive voltage, DR can transoid go out the hole at the interface with vertical bypass silica (trench fill zone) in the drift region of N type; Therefore compare with traditional structure, can improve the hole concentration at emitter junction place; Therefore when ON state (grid of insulated gate bipolar transistor is opened the back) when on collector electrode, adding malleation scanning, has more hole and participates in conduction, thus the conductivity when having improved the insulated gate bipolar transistor ON state.
It is understandable that though the present invention with the preferred embodiment disclosure as above, yet the foregoing description is not in order to limit the present invention.For any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (8)
1. insulated gate bipolar transistor, it comprises: collector electrode, drift region, emitter and grid; It is characterized in that, in said emitter, arranged the trench fill zone, filled oxide, polysilicon and metal from the bottom successively to the top in the said trench fill zone, said metal has formed trench electrode; And said trench electrode is connected with said emitter.
2. insulated gate bipolar transistor according to claim 1 is characterized in that said oxide is a silica.
3. insulated gate bipolar transistor according to claim 1 and 2 is characterized in that said metal is a metallic aluminium.
4. insulated gate bipolar transistor according to claim 1 and 2 is characterized in that, said collector electrode is a P type collector electrode; Said drift region is N type drift region; True emitter is a P type collection emitter.
5. insulated gate bipolar transistor manufacturing approach is characterized in that comprising:
At first, form a groove at the emitter place;
Then, fill oxide in groove;
After this, deposit polysilicon in groove;
At last, depositing metal and makes trench electrode be connected with the emitter of insulated gate bipolar transistor forming trench electrode in groove.
6. insulated gate bipolar transistor manufacturing approach according to claim 5 is characterized in that said oxide is a silica.
7. according to claim 5 or 6 described insulated gate bipolar transistor manufacturing approaches, it is characterized in that said metal is a metallic aluminium.
8. according to claim 5 or 6 described insulated gate bipolar transistor manufacturing approaches, it is characterized in that said collector electrode is a P type collector electrode; Said drift region is N type drift region; True emitter is a P type collection emitter.
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| CN201110388471.0A CN102394244B (en) | 2011-11-29 | 2011-11-29 | Insulated gate bipolar transistor and its manufacture method |
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| CN201110388471.0A CN102394244B (en) | 2011-11-29 | 2011-11-29 | Insulated gate bipolar transistor and its manufacture method |
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| CN102394244B CN102394244B (en) | 2017-07-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637724A (en) * | 2012-03-31 | 2012-08-15 | 上海宏力半导体制造有限公司 | Insulated gate bipolar transistor (IGBT) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194864A (en) * | 2011-05-09 | 2011-09-21 | 电子科技大学 | Groove-grid-type insulated gate bipolar transistor with body electrode |
| US20110233684A1 (en) * | 2010-03-24 | 2011-09-29 | Kabushiki Kaisha Toshiba | Semiconductor device |
| JP2011199041A (en) * | 2010-03-19 | 2011-10-06 | Toshiba Corp | Semiconductor device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011199041A (en) * | 2010-03-19 | 2011-10-06 | Toshiba Corp | Semiconductor device |
| US20110233684A1 (en) * | 2010-03-24 | 2011-09-29 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN102194864A (en) * | 2011-05-09 | 2011-09-21 | 电子科技大学 | Groove-grid-type insulated gate bipolar transistor with body electrode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637724A (en) * | 2012-03-31 | 2012-08-15 | 上海宏力半导体制造有限公司 | Insulated gate bipolar transistor (IGBT) |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
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