CN102392228A - Air intake method for ALD equipment - Google Patents
Air intake method for ALD equipment Download PDFInfo
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- CN102392228A CN102392228A CN2011103396971A CN201110339697A CN102392228A CN 102392228 A CN102392228 A CN 102392228A CN 2011103396971 A CN2011103396971 A CN 2011103396971A CN 201110339697 A CN201110339697 A CN 201110339697A CN 102392228 A CN102392228 A CN 102392228A
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- carrier gas
- air inlet
- ald
- layer deposition
- atomic layer
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Abstract
The invention relates to the technical field of atomic layer deposition (ALD) equipment, in particular to an air intake method for the ALD equipment. The air intake method comprises the step that two or more than two precursor sources are respectively conveyed to an ALD reaction cavity through a carrier gas transporting manner and/or a carrier gas purging manner. By adopting the air intake method, two or multiple ways of air intake can be realized at the same time, and the quantity of precursors suitable for using the ALD equipment to deposit thin films is increased while the requirement of an ALD deposition manner is satisfied.
Description
Technical field
The present invention relates to the atomic layer deposition apparatus technical field, be specifically related to a kind of air inlet method that is used for atomic layer deposition apparatus.
Background technology
Ald (ALD) technology is because its unique depositional mode (monoatomic layer low temperature layer by layer deposition) makes the film of preparation at aspect of performances such as homogeneity, roughness very big improvement arranged.The matter of utmost importance of ALD depositional mode is a forming core; The quality of forming core directly has influence on the quality that makes film at last; But just because of this unique depositional mode of ALD technology; Make that not all common precursor can both be used for the ALD mode at present, could decompose such as material demand high temperature such as methane, carbonic acid gas.Therefore, in order to make its characteristic of ALD performance, need do the branch desorption requirement (except that high temperature requirement) that precursor is satisfied in suitable improvement to the intake method of equipment.
Summary of the invention
The object of the present invention is to provide a kind of air inlet method that is used for atomic layer deposition apparatus, use this method can realize that more presoma deposits with the ALD mode.
In order to achieve the above object, the technical scheme of the present invention's employing is:
A kind of air inlet method that is used for atomic layer deposition apparatus, said air inlet method comprises: two or more precursor source is transported in the ald reaction chamber through the mode that carrier gas transportation and/or carrier gas purge respectively.
In the such scheme, said carrier gas is that serial contacts with each presoma one by one.
In the such scheme, the source of said carrier gas transportation is one the tunnel, and the source that said carrier gas purges is a multichannel.
In the such scheme, said carrier gas transportation is used for carrying difficult evaporable material, and said carrier gas purges and is used for carrying volatile material.
In the such scheme, said carrier gas is argon gas or helium.
In the such scheme, the flow of said carrier gas is 1sccm-200sccm.
In the such scheme, the temperature of the tube wall that said air inlet method uses is lower than 1 ℃-99 ℃ of ald reaction chamber temperature.
Compare with the prior art scheme, the beneficial effect that the technical scheme that the present invention adopts produces is following:
The present invention can realize two-way or multichannel air inlet simultaneously, when satisfying the ALD depositional mode, increases the quantity that is fit to the precursor of ALD equipment deposit film.
Description of drawings
Fig. 1 is the ALD air inlet synoptic diagram of serial in the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment technical scheme of the present invention is described in detail.
The present invention provides a kind of air inlet method that is used for atomic layer deposition apparatus, is two or more precursor source is transported in the ald reaction chamber through the mode that carrier gas transportation and/or carrier gas purge.Carrier gas is that serial contacts with each presoma one by one.The source of carrier gas transportation is defined as one the tunnel, and the source that carrier gas purges can be multichannel.Difficult relatively evaporable material gets in the transport pipe through the carrier gas mode of transport, and volatile relatively material is through brought in the transport pipe by the carrier gas purging after the volatilization voluntarily.Carrier gas can be selected argon gas or helium for use.The flow of carrier gas is 1sccm-200sccm, makes reactant to mix fully.The temperature of the tube wall that air inlet method uses is lower than 1 ℃-99 ℃ of ald reaction chamber temperature.
Use an air inlet of the present invention can advance multiple gases, a kind of mode is to be introduced in each precursor source by carrier gas through some pipelines, and then the variation through pressure, lets carrier gas carry precursor again and comes out i.e. carrier gas mode of transport; Another kind of mode is that the gas that each precursor thermal evaporation is come out mixes through out-of-date in carrier gas mutually, through the transportation arrival reaction chamber of carrier gas, i.e. carrier gas purging mode.According to practical situation, can take the various inlet mode, or in an intake process, use two kinds of intake methods simultaneously.
Embodiment 1:
As shown in Figure 1; Present embodiment provides a kind of air inlet method that is used for atomic layer deposition apparatus; N-methyl-N-nitrosourea solution and sodium hydroxide alkaline solution are reacted, form methyl structural at substrate surface then, concrete steps are following:
(1) silit (111) substrate surface with hydrogen treat 20 minutes, make the surface form c h bond.
The N-methyl-N-nitrosourea of the 10ml-250ml that packs in (2) two source bottles, another sodium hydroxide solution of packing into.
(3) carrier gas flux is 1sccm-250sccm, gets into N-methyl-N-nitrosourea solution, mixes with the sodium hydroxide alkaline solution that mode of transport carries out with N-methyl-N-nitrosourea and the purging mode is transported, and reacts, and reaction formula is:
Diazomethane self decomposes, and forms the material carbene:
(4) the degradation production carbene (: CH2) with substrate generation insertion reaction, expression formula:
The present invention proposes a kind of of equipment gas circuit improved one's methods according to existing atomic layer deposition apparatus; It can realize two-way or multichannel air inlet simultaneously; Therefore when satisfying ALD depositional mode (single element layer by layer deposition), increase the quantity that is fit to the precursor of ALD equipment deposit film.
The above is merely the preferred embodiments of the present invention, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. an air inlet method that is used for atomic layer deposition apparatus is characterized in that, said air inlet method comprises: two or more precursor source is transported in the ald reaction chamber through the mode that carrier gas transportation and/or carrier gas purge respectively.
2. the air inlet method that is used for atomic layer deposition apparatus as claimed in claim 1 is characterized in that, said carrier gas is that serial contacts with each presoma one by one.
3. the air inlet method that is used for atomic layer deposition apparatus as claimed in claim 1 is characterized in that, the source of said carrier gas transportation is one the tunnel, and the source that said carrier gas purges is a multichannel.
4. the air inlet method that is used for atomic layer deposition apparatus as claimed in claim 1 is characterized in that, said carrier gas transportation is used for carrying difficult evaporable material, and said carrier gas purges and is used for carrying volatile material.
5. the air inlet method that is used for atomic layer deposition apparatus as claimed in claim 1 is characterized in that, said carrier gas is argon gas or helium.
6. the air inlet method that is used for atomic layer deposition apparatus as claimed in claim 1 is characterized in that, the flow of said carrier gas is 1sccm-200sccm.
7. the air inlet method that is used for atomic layer deposition apparatus as claimed in claim 1 is characterized in that, the temperature of the tube wall that said air inlet method uses is lower than 1 ℃-99 ℃ of ald reaction chamber temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103396971A CN102392228A (en) | 2011-11-01 | 2011-11-01 | Air intake method for ALD equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103396971A CN102392228A (en) | 2011-11-01 | 2011-11-01 | Air intake method for ALD equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102392228A true CN102392228A (en) | 2012-03-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103396971A Pending CN102392228A (en) | 2011-11-01 | 2011-11-01 | Air intake method for ALD equipment |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101040371A (en) * | 2004-08-16 | 2007-09-19 | 阿维扎技术公司 | Direct liquid injection system and method for forming multi-component dielectric films |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
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2011
- 2011-11-01 CN CN2011103396971A patent/CN102392228A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101040371A (en) * | 2004-08-16 | 2007-09-19 | 阿维扎技术公司 | Direct liquid injection system and method for forming multi-component dielectric films |
| CN102127756A (en) * | 2011-02-21 | 2011-07-20 | 东华大学 | Device and method for enhancing atomic layer deposition by pulse-modulation radio frequency plasma |
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Application publication date: 20120328 |