CN102384486A - Ni-Cr alloy thin film igniter with low ignition voltage and preparation method thereof - Google Patents
Ni-Cr alloy thin film igniter with low ignition voltage and preparation method thereof Download PDFInfo
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- CN102384486A CN102384486A CN2011103107030A CN201110310703A CN102384486A CN 102384486 A CN102384486 A CN 102384486A CN 2011103107030 A CN2011103107030 A CN 2011103107030A CN 201110310703 A CN201110310703 A CN 201110310703A CN 102384486 A CN102384486 A CN 102384486A
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- igniter
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Abstract
The invention discloses a Ni-Cr alloy thin film igniter with a low ignition voltage and a preparation method thereof and belongs to the technical field of a priming system. The Ni-Cr alloy thin film igniter with the low ignition voltage comprises a base; an isolating film is arranged on the base; an igniting element is arranged on the isolating film; the igniting element is provided with a bonding pad area of an igniter lead wire; and the igniting element is made of Ni-Cr alloy. According to the preparation method provided by the invention, the igniter is prepared by using a micro-machining technology. In the Ni-Cr alloy thin film igniter, the ignition is reliably realized at a lower ignition voltage; the ignition voltage is as low as 4.8 V/10 muF and the ignition energy is as low as 100 mJ; and the shake-proof performance is good.
Description
Technical field
The invention belongs to the priming system technical field, is a kind of alloy firm bridge igniter based on micromachining technology and preparation method thereof.More particularly, the present invention relates to a kind of igniter, its igniting element is made up of Ni-Cr alloy firm bridge, and can under lower ignition voltage and energy, reliably show effect.
Background technology
Electric spark workpiece mainly comprises bridge silk formula electric spark workpiece, membrane bridge priming system.Wherein the membrane bridge priming system comprises semiconductive bridge priming system, metallic film bridge priming system and blast membrane bridge priming system etc.Bridge silk formula priming system is the sparking mode that people generally use always, is to be connected to form with suspension type resistance heating wire and two electrodes by one, and mainly there is following shortcoming in this technology:
A) the process consistency level was relatively poor during bridge silk formula igniter was produced, in use the accurate performance of future position firearm;
B) under stronger vibration environment, the stretching action that the bridge silk radially exists causes the bridge silk to deform easily, possibly cause bridge silk fracture and the solder joint sealing-off of breaking, and causes the igniter cisco unity malfunction, reduces bridge silk formula igniter reliability level;
C) bridge silk formula igniter can not satisfy low firing energy and the requirement of getting angry fast.
Metallic film bridge igniter is on substrate, to deposit the pontic material through physical vapor deposition (PVD) method, and membrane bridge resistance size can obtain different resistance values by its geometry decision through changing membrane bridge length, width and thickness in the reality.In other words, metallic film bridge contour structures can design to satisfy different functions according to different performance requirements, and this is one of the most outstanding advantage of metallic film bridge igniter.Because metallic film bridge igniter is directly to be deposited on the mode of metallic film through physical vapour deposition (PVD) in the substrate; Adhesion between metallic film and the substrate is stronger; And in bearing the process of overload; Radially there is not stretching action in the metallic film bridge, the fracture of metallic film bridge can not occur and comes off etc.Utilize micromachining technology in substrate, to prepare metallic film bridge igniter; Can in a slice substrate, make hundreds of thousands of metallic film bridge ignition elements simultaneously; Improve the controllability level of working (machining) efficiency, machining reproducibility and processing dimension, and reduce manufacturing cost greatly.
To the problems referred to above, need a kind of metallic film bridge igniter that can under low ignition voltage, reliably get angry.
Summary of the invention
Higher relatively to prior art ignition voltage; The defective that the time of ignition is relatively long; The present invention aims to provide a kind of Ni-Cr alloy firm bridge igniter and preparation method thereof, and this igniter can reliably be got angry under low ignition voltage, and has good resistance to shock.
To achieve these goals; The technical scheme that the present invention adopted is: the Ni-Cr alloy firm bridge igniter of said low ignition voltage, comprise substrate, and its design feature is; Said substrate is provided with barrier film; This barrier film is provided with ignition element, is provided with igniter lead pad district at ignition element, and the material of said ignition element is the Ni-Cr alloy.
Said barrier film is the lower dielectric film of a kind of thermal conductivity, is preferably the SiO2 barrier film, and thickness is 0.5 μ m～1 μ m.Wherein, the material of above-mentioned substrate is selected from FR-4, polyimides, Al
2O
3In at least a, basal diameter is 50mm～100mm, thickness 0.5mm～1mm.Wherein, the material in above-mentioned igniter lead pad district is selected from least a in aluminium, copper, the gold, silver, the thickness 0.1 μ m～1 μ m in igniter lead pad district.
During use, the lead pad district that said igniter lead pad district is used to install through lead-in wire and on the pedestal of said igniter links to each other.
Further, film thickness can be according to product performance and requirement decision film thickness value as one of deciding factor that influences the igniter performance, and to obtain the Different products performance, the thickness of above-mentioned ignition element preferably is not more than 2 * 10
-7M～5 * 10
-6M.
Ni and Cr ratio are preferably 80: 20 in the said ignition element.
Further, the invention provides a kind of preparation method of Ni-Cr alloy firm bridge igniter of above-mentioned low ignition voltage, it comprises the steps:
1), substrate is cleaned removal substrate surface greasy dirt and impurity;
2), in substrate the deposit barrier film, deposit Ni-Cr alloy firm on barrier film;
3), on said Ni-Cr alloy firm, prepare photoresist mask layer, utilize photoresist to etch ignition element as mask material, etching depth is the thickness of Ni-Cr alloy firm;
4), on the ignition element layer, prepare photoresist mask layer, utilize physical vapor deposition deposition techniques igniter lead pad district;
5), adopt slicer to cut into slices, make Ni-Cr alloy firm bridge igniter.
In said step 3), on said Ni-Cr alloy firm, utilize photoetching process to prepare the photoresist mask layer of ignition element shape, utilize dry etching technology that the Ni-Cr alloy firm is etched into ignition element again.
In said step 4), on the ignition element layer, utilize photoetching process to prepare the photoresist mask layer of igniter lead pad district shape, utilize physical vapor deposition deposition techniques igniter lead pad district.
Compared with prior art, the invention has the beneficial effects as follows: the present invention adopts micromachining technology, helps improving the uniformity of processing technology and the reliability level that igniter uses, and can realize the batch process of igniter, effectively reduces manufacturing cost.The present invention adopts Ni-Cr alloy firm bridge, makes ignition voltage be low to moderate 4.8V/10 μ F, and ignition energy is low to moderate 110mJ, satisfies the demand than low ignition energy ignition device.The present invention adopts less base material of pyroconductivity and barrier material, and effectively less scattering and disappearing of heat improved the igniter reaction rate, shortens the time of ignition.The present invention adopts ion beam etching technology preparation Ni-Cr alloy firm bridge ignition element; Can obtain that the side steepness is high, between sheet with sheet in the Ni-Cr alloy firm bridge construction of good uniformity, improved the reliability level of processing technology consistency level and igniter work greatly.The present invention utilizes micromachining technology can in a slice substrate, make hundreds of thousands of metallic film bridge ignition elements simultaneously, improves the controllability level of working (machining) efficiency, machining reproducibility and processing dimension, and reduces manufacturing cost greatly.
Below in conjunction with accompanying drawing and embodiment the present invention is done to set forth further.
Description of drawings
Fig. 1 is the vertical view of an embodiment of the present invention;
Fig. 2 is the profile of Fig. 1;
Fig. 3 is the array arrangement vertical view of Fig. 1;
Fig. 4 is the vertical view of Fig. 1 band wire bonds;
Fig. 5 is a firing circuit sketch map of the present invention.
In the drawings:
1-Ni-Cr alloy firm bridge igniter; The 2-substrate; The 3-barrier film;
The 4-ignition element; 5A, 5B-igniter lead pad district; 6-lead pad district;
The 7-pedestal; The 8-lead-in wire.
The specific embodiment
A kind of Ni-Cr alloy firm bridge igniter of low ignition voltage shown in Fig. 1～3, comprises substrate 2, and said substrate 2 is provided with SiO
2Barrier film 3, this barrier film 3 is provided with thickness and is not more than 5 * 10
-6The ignition element 4 of m is provided with igniter lead pad district 5A at ignition element 4, and 5B is as shown in Figure 4, this igniter lead pad district 5A, and 5B links to each other through the 8 and one lead pad districts 6 that are used to install on the pedestal 7 of said igniter 1 that go between; The material of said ignition element 4 is the Ni-Cr alloy, and wherein Ni and Cr ratio are 80: 20.The material of said substrate 2 is selected from FR-4, polyimides, Al
2O
3In at least a; Said igniter lead pad district 5A, the material of 5B are selected from least a in aluminium, copper, the gold, silver.
The preparation method of the Ni-Cr alloy firm bridge igniter of low ignition voltage of the present invention, carry out according to following steps successively:
A) the FR-4 substrate 2 of diameter 50mm～100mm, thickness 0.5mm～1mm is cleaned, greasy dirt and the impurity of removing the substrate burnishing surface is stained etc.;
B) utilize the SiO of ion beam sputter depositing thickness 0.5 μ m～1 μ m
2Barrier film 3 reduces scattering and disappearing of heat basad 2, and in order to strengthen the adhesion of Ni-Cr alloy firm layer and basalis 2;
C) the Ni-Cr alloy firm layer of ion beam sputter depositing thickness 0.2 μ m～5 μ m is as getting angry material;
D) on the Ni-Cr alloy firm, utilize photoetching process to make the photoresist mask layer with the ignition element shape, utilize the ion beam dry etch process to remove unwanted alloy firm zone, form Ni-Cr alloy firm bridge construction;
E) utilize photoetching process to make photoresist mask layer, the thin layer outside the wire bonding zone is protected;
F) the Au wire bond pad areas 5A of ion beam sputter depositing thickness 0.1 μ m～1 μ m, 5B peels off and cleans the preparation that Ni-Cr alloy firm bridge igniter 1 is accomplished in the back.
Be illustrated in figure 5 as the said Ni-Cr alloy firm of present embodiment bridge igniter firing circuit sketch map; The said low Ni-Cr alloy firm bridge igniter blast voltage of getting angry voltage of present embodiment is lower than 4.8V; Firing energy is about 110 little Jiao, and igniter perhaps in other words of the present invention can be 1.1 * 10
-4The low-down like this energy of J is reliable down gets angry.
The content that the foregoing description is illustrated is to be understood that to these embodiment and only is used to be illustrated more clearly in the present invention; And be not used in the restriction scope of the present invention; After having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
Claims (10)
1. get angry the Ni-Cr alloy firm bridge igniter of voltage for one kind low, comprise substrate (2), it is characterized in that said substrate (2) is provided with barrier film (3), this barrier film (3) is provided with ignition element (4), ignition element (4) be provided with igniter lead pad district (5A, 5B); The material of said ignition element (4) is the Ni-Cr alloy.
2. the Ni-Cr alloy firm bridge igniter of low ignition voltage according to claim 1 is characterized in that, (5A, the lead pad district (6) that 5B) is used to install on the pedestal (7) of said igniter (1) through lead-in wire (8) and links to each other in this igniter lead pad district.
3. the Ni-Cr alloy firm bridge igniter of low ignition voltage according to claim 1 is characterized in that the material of said substrate (2) is selected from FR-4, polyimides, Al
2O
3In at least a, substrate (2) diameter is 50mm～100mm, thickness 0.5mm～1mm.
4. the Ni-Cr alloy firm bridge igniter of low ignition voltage according to claim 1; It is characterized in that (5A, material 5B) are selected from least a in aluminium, copper, the gold, silver in said igniter lead pad district; Igniter lead pad district (5A, thickness 0.1 μ m～1 μ m 5B).
5. the Ni-Cr alloy firm bridge igniter of low ignition voltage according to claim 1 is characterized in that the thickness 2 * 10 of said ignition element (4)
-7M～5 * 10
-6M.
6. the Ni-Cr alloy firm bridge igniter of low ignition voltage according to claim 1 is characterized in that, Ni and Cr ratio are 80: 20 in the said ignition element (4).
7. the Ni-Cr alloy firm bridge igniter of low ignition voltage according to claim 1 is characterized in that the material of said barrier film (3) is SiO
2, thickness is 0.5 μ m～1 μ m.
8. preparation method like the Ni-Cr alloy firm bridge igniter (1) of the said low ignition voltage of one of claim 1～7, it is characterized in that: it comprises the steps:
1), substrate (2) is cleaned removal substrate (2) surface and oil contaminant and impurity;
2), at the last deposit barrier film (3) of substrate (2), at the last deposit Ni-Cr alloy firm of barrier film (3);
3), on said Ni-Cr alloy firm, prepare photoresist mask layer, etch ignition element (4) with photoresist as mask material, etching depth is the thickness of Ni-Cr alloy firm;
4), on ignition element (4) layer, prepare photoresist mask layer, utilize physical vapor deposition deposition techniques igniter lead pad district (5A, 5B);
5), adopt slicer to cut into slices, make Ni-Cr alloy firm bridge igniter (1).
9. the preparation method of the Ni-Cr alloy firm bridge igniter (1) of low ignition voltage according to claim 8; It is characterized in that: in the said step 3); On said Ni-Cr alloy firm, utilize photoetching process to prepare the photoresist mask layer of ignition element (4) shape, utilize dry etching technology that the Ni-Cr alloy firm is etched into ignition element (4).
10. the preparation method of the Ni-Cr alloy firm bridge igniter (1) of low ignition voltage according to claim 8; It is characterized in that: in the said step 4); On ignition element (4) layer, utilize photoetching process to prepare igniter lead pad district (5A; 5B) the photoresist mask layer of shape, utilize physical vapor deposition deposition techniques igniter lead pad district (5A, 5B).
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| CN2011103107030A CN102384486A (en) | 2011-09-23 | 2011-09-23 | Ni-Cr alloy thin film igniter with low ignition voltage and preparation method thereof |
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| CN2011103107030A CN102384486A (en) | 2011-09-23 | 2011-09-23 | Ni-Cr alloy thin film igniter with low ignition voltage and preparation method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102927590A (en) * | 2012-10-26 | 2013-02-13 | 中国电子科技集团公司第四十八研究所 | Metal film bridge igniter and preparation method thereof |
| CN105423340A (en) * | 2015-11-30 | 2016-03-23 | 中国电子科技集团公司第四十八研究所 | Integrated thin film bridge igniter and preparation method thereof |
| CN105737681A (en) * | 2016-03-10 | 2016-07-06 | 中国振华集团云科电子有限公司 | Preparation method for bridge area of film bridge initiator |
| CN106482591A (en) * | 2016-12-14 | 2017-03-08 | 中国工程物理研究院化工材料研究所 | A kind of impact piece transducing meta structure and preparation method thereof |
| CN106765308A (en) * | 2016-11-28 | 2017-05-31 | 中国电子科技集团公司第四十八研究所 | A kind of direct insertion membrane bridge igniter and preparation method thereof |
| CN105674808B (en) * | 2016-02-26 | 2017-10-31 | 中国振华集团云科电子有限公司 | A kind of chip Alloy Foil firing resistor and preparation method thereof |
| CN111174652A (en) * | 2019-09-30 | 2020-05-19 | 深圳市开步电子有限公司 | Detonation resistor and blasting device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102927590A (en) * | 2012-10-26 | 2013-02-13 | 中国电子科技集团公司第四十八研究所 | Metal film bridge igniter and preparation method thereof |
| CN105423340A (en) * | 2015-11-30 | 2016-03-23 | 中国电子科技集团公司第四十八研究所 | Integrated thin film bridge igniter and preparation method thereof |
| CN105423340B (en) * | 2015-11-30 | 2018-07-06 | 中国电子科技集团公司第四十八研究所 | Integrated membrane bridge igniter and preparation method thereof |
| CN105674808B (en) * | 2016-02-26 | 2017-10-31 | 中国振华集团云科电子有限公司 | A kind of chip Alloy Foil firing resistor and preparation method thereof |
| CN105737681A (en) * | 2016-03-10 | 2016-07-06 | 中国振华集团云科电子有限公司 | Preparation method for bridge area of film bridge initiator |
| CN106765308A (en) * | 2016-11-28 | 2017-05-31 | 中国电子科技集团公司第四十八研究所 | A kind of direct insertion membrane bridge igniter and preparation method thereof |
| CN106482591A (en) * | 2016-12-14 | 2017-03-08 | 中国工程物理研究院化工材料研究所 | A kind of impact piece transducing meta structure and preparation method thereof |
| CN111174652A (en) * | 2019-09-30 | 2020-05-19 | 深圳市开步电子有限公司 | Detonation resistor and blasting device |
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Application publication date: 20120321 |