CN102376619B - Method for forming shallow groove structure with ONO as hard mask layer - Google Patents
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Abstract
The invention discloses a method for forming a shallow groove structure with an ONO as a hard mask layer. The method comprises the following steps: (1) depositing a bottom oxide film, a nitride film and a top oxide film on a silicon substrate in order to form an ONO structure; (2) etching and forming a shallow groove; (3) carrying out nitride film back etching; (4) forming an oxide film lateral opening; (5) carrying out cleaning and forming substrate oxide film deposition, and obtaining an smooth chamfer angle of a groove top; (6) carrying out oxide film deposition; (7) carrying out oxide film back etching to form sidewall protection of an active region; (8) according to a device requirement, carrying out injection; (9) carrying out oxide film etching of the top and a sidewall, and controlling lateral etching of an active region oxide film; (10) forming a substrate oxide film again and filling an HDP; According to the method, the shallow groove structure satisfying an SIGE BICMOS project device requirement is obtained, and good morphology control and HDP filling effects are realized.
Description
Technical field
The invention belongs to semiconductor integrated circuit and manufacture field, be specifically related to a kind of method that forms shallow ditch groove structure, relate in particular to a kind of ONO of usining and as hard mask layer, form the method for shallow ditch groove structure.
Background technology
Structure for Eco-power SiGE BICMOS (germanium silicon-bipolar transistor-complementary metal field effect transistor), in the forming process of shallow trench, at top, active area, used the hard mask layer of ONO (oxide-film-nitride film-oxide-film) structure.Trilamellar membrane structure, not only for the hard mask layer of shallow trench etching, also can be used for serving as when the buried layer in shallow trench bottom injects the barrier layer of active area part.But, existence due to trilamellar membrane structure, control also to the pattern at top below, the side direction etching of the oxide-film below nitride film is controlled, and the filling of HDP subsequently (high-density plasma oxide-film) brings a lot of challenges: be 1. easy to form the nitride film structure of inclination, cause follow-up oxide-film sidewall diaphragm too thin; 2. be easy to cause the excessive loss of top oxide-film, also can cause follow-up oxide-film sidewall protection too thin.The too thin consequence of sidewall protection mainly contains: when buried layer injects, to active area, can not form effective protection 1.; 2. bottom oxide film lateral openings is out of control, must cause follow-up HDP to fill and form cavity.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of ONO of usining and as hard mask layer, forms the method for shallow ditch groove structure, and the method can obtain the shallow ditch groove structure that meets SiGE BICMOS project requirement on devices, reaches good pattern and controls and HDP filling effect.
For solving the problems of the technologies described above, the invention provides a kind of ONO of usining and as hard mask layer, form the method for shallow ditch groove structure, comprise the steps:
(1) deposit bottom oxide film successively, nitride film and top oxide-film on silicon substrate, form ONO structure;
(2) etching forms shallow trench;
(3) nitride film returns quarter;
(4) oxide-film lateral openings forms;
(5) clean and form the deposit of substrate oxide-film, obtain the round and smooth chamfering at groove top;
(6) oxide-film deposit;
(7) oxide-film returns and carves the sidewall protection that is formed with source region;
(8) according to requirement on devices, inject;
(9) the oxide-film etching of top and sidewall, controls active area oxide film sidewall to etching;
(10) again forming substrate oxide-film and HDP fills.
In step (1), thermal oxidation technology is used in the deposit of described bottom oxide film, and its thickness is 50-200 dust; Low pressure chemical gaseous phase deposition technique or plasma enhanced chemical gaseous phase deposition technique are used in the deposit of described nitride film, and its thickness is 100-600 dust; The deposit of described top oxide-film adopts normal pressure chemical gaseous phase deposition technique, low pressure chemical gaseous phase deposition technique or plasma enhanced chemical gaseous phase deposition technique, and its thickness is 1000-2000 dust.
In step (2), use common dry etching to form shallow trench, the degree of depth of this shallow trench is 3000-5000 dust.
In step (3), described nitride film returns carves the wet-etching technology that uses hot phosphoric acid, and returning and carving the degree of depth is 100-300 dust, and described nitride film returns and must before step (4) oxide-film lateral openings, complete quarter, guarantees the vertical profile of nitride film.
In step (4), return and carve part bottom oxide film and top oxide-film, form bottom oxide film lateral openings, the opening degree of depth is 50-150 dust, the etch amount of top oxide-film is 1.2-2 times of bottom oxide film lateral openings; This step adopts wet-etching technology, and wet liquid medicine is used buffer oxide film etching agent or dilute hydrofluoric acid.
In step (5), described cleaning adopts dioxysulfate aqueous mixtures+dilute hydrofluoric acid+ammoniacal liquor hydrogen peroxide mixture+hydrochloric acid hydrogen peroxide mixture, HF in this dilute hydrofluoric acid: the volume ratio of deionized water in the scope of 1: 50 to 1: 500, NH in this ammoniacal liquor hydrogen peroxide mixture
4oH: H
2o
2: H
2the volume ratio of O is 1: 1: 5 to 1: 6: 100; The cleaning temperature of this dilute hydrofluoric acid is room temperature, and scavenging period is 5-30 second; The cleaning temperature of this ammoniacal liquor hydrogen peroxide mixture is 25-45 ℃, and scavenging period is 15 seconds-2 minutes; Described substrate oxide-film adopts thermal oxidation technology to form, and its thickness is at 100-200 dust.
In step (6), use normal pressure chemical gaseous phase deposition technique, low pressure chemical gaseous phase deposition technique or plasma enhanced chemical gaseous phase deposition technique deposition oxidation film, the thickness of this oxide-film is 600-1000 dust.
In step (7), adopt dry etching to return oxide-film at quarter, remove the substrate oxide-film of channel bottom, and the oxide-film of removing part steps (6) deposit is to be formed with the sidewall protection in source region.
In step (8), according to requirement on devices, channel bottom is carried out to buried layer and inject, the oxide-film at sidewall and top provides protection to active area, avoids Implantation to active area.
In step (9), carry out the etching of the oxide-film of top and sidewall, remove by the oxide-film of step (8) doping, and part substrate oxide-film and bottom oxide film below etching nitride film, bottom oxide film can form lateral openings between nitride film and silicon substrate, and the degree of depth of controlling this lateral openings is less than 150 dusts; This step adopts wet-etching technology, and wet liquid medicine is used buffer oxide film etching agent or dilute hydrofluoric acid.
In step (10), use thermal oxidation technology to form substrate oxide-film, the thickness of this substrate oxide-film is 100-300 dust, its effect is when HDP fills, to avoid the infringement of plasma bombardment to active area and groove; Finally fill HDP, form the isolation of device.
Compared to the prior art, the present invention has following beneficial effect: in traditional handicraft, be first to carve oxide-film to carve nitride film again, can cause nitride film pattern not good (seeing Figure 11); And the present invention returns quarter by adjustment nitride film and oxide film sidewall improves the pattern of nitride film to opening process order, after nitride film is first carved in employing, carve oxide-film, to obtain vertical nitride film pattern (seeing Figure 12).In traditional handicraft, DHF and APM cause top oxide-film excessive loss (seeing Figure 13) after processing, and the present invention is by controlling scavenging period and the temperature of DHF and APM, effectively reduces top oxide-film side direction loss (seeing Figure 14).The pattern of side wall protective layer not good (seeing Figure 15) in traditional handicraft; and the pattern of side wall protective layer of the present invention good (seeing Figure 16); its vertical nitride film and the top oxide-film loss of trying one's best little have guaranteed the pattern after subsequent oxidation film side wall protective layer etching, to active area, provide better protection.The shallow ditch groove structure that traditional handicraft forms, active area lateral openings (seeing Figure 17) out of control after doped oxide film etching, and the shallow ditch groove structure that technique of the present invention forms, active area lateral openings more controlled (seeing Figure 18) after doped oxide film etching.Adopt the inventive method in the end HDP has filled rear demonstration and there is no cavity formation, top chamfer is very round and smooth (being shown in Figure 19) also.Visible, by the inventive method, can obtain the shallow ditch groove structure that meets SIGEBICMOS top order requirement on devices, reach good pattern and control and HDP filling effect.
Accompanying drawing explanation
Fig. 1-Figure 10 is the schematic flow sheet of the inventive method; Wherein,
Fig. 1 is the schematic diagram after the inventive method step (1) completes;
Fig. 2 is the schematic diagram after the inventive method step (2) completes;
Fig. 3 is the schematic diagram after the inventive method step (3) completes;
Fig. 4 is the schematic diagram after the inventive method step (4) completes;
Fig. 5 is the schematic diagram after the inventive method step (5) completes;
Fig. 6 is the schematic diagram after the inventive method step (6) completes;
Fig. 7 is the schematic diagram after the inventive method step (7) completes;
Fig. 8 is the schematic diagram after the inventive method step (8) completes;
Fig. 9 is the schematic diagram after the inventive method step (9) completes;
Figure 10 is the schematic diagram after the inventive method step (10) completes;
Figure 11 first carves oxide-film to carve nitride film again and cause the not good schematic diagram of nitride film pattern in traditional handicraft;
To be the present invention return and carve and oxide film sidewall improves the schematic diagram of the pattern of nitride film to opening process order by adjusting nitride film Figure 12;
Figure 13 is that in traditional handicraft, DHF and APM cause the schematic diagram of top oxide-film excessive loss after processing;
Figure 14 be the present invention by controlling scavenging period and the temperature of DHF and APM, effectively reduce the schematic diagram of top oxide-film side direction loss;
Figure 15 is the pattern schematic diagram of the side wall protective layer of traditional handicraft formation;
Figure 16 is the pattern schematic diagram of side wall protective layer of the present invention;
Figure 17 is the shallow ditch groove structure that traditional handicraft forms, active area lateral openings schematic diagram out of control after doped oxide film etching;
Figure 18 is the shallow ditch groove structure that technique of the present invention forms, the more controlled schematic diagram of active area lateral openings after doped oxide film etching;
Figure 19 be adopt the inventive method in the end HDP has filled rear demonstration and there is no cavity formation, top chamfer is very round and smooth schematic diagram also.
Wherein, the 1st, silicon substrate, the 2nd, top oxide-film, the 3rd, nitride film, the 4th, bottom oxide film, the 5th, oxide-film, the 6th, buried layer, the 7th, high-density plasma oxide-film (HDP), the 8, the 9th, substrate oxide-film.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further detailed explanation.
The present invention, by the order of adjusting process step, optimizes the method for particular step process conditions, can obtain the shallow ditch groove structure that meets SIGE BICMOS project requirement on devices, reaches good pattern and controls and HDP filling effect.
The present invention is a kind of usings ONO as hard mask layer, to form the processing step of method of shallow ditch groove structure as follows:
(1) formation of ONO structure as shown in Figure 1: deposit bottom oxide film successively 4, nitride film 3 and top oxide-film 2 on silicon substrate 1, form ONO structure; Deposit bottom oxide film 4 is used thermal oxidation technology, the thickness of bottom oxide film 4 is from 50 dust-200 dusts, the deposit of nitride film 3 can be used LPCVD (low pressure chemical gaseous phase deposition technique) or PECVD (plasma enhanced chemical gaseous phase deposition technique), the thickness of nitride film 3 is that 100 dusts are to 600 dusts, deposit top oxide-film 2 can adopt APCVD (normal pressure chemical gaseous phase deposition technique), LPCVD or PECVD method form, and the thickness of top oxide-film 2 is that 1000 dusts are to 2000 dusts;
(2) as shown in Figure 2, shallow trench figure forms and etching, uses common dry etching, and the shallow trench degree of depth is 3000-5000 dust;
(3) as shown in Figure 3, nitride film is carved for 3 times, and nitride film is carved the wet-etching technology that uses hot phosphoric acid 3 times, and returning and carving the degree of depth is 100-300 dust, and nitride film must complete 3 times quarters before oxide-film lateral openings, guaranteed the vertical profile of nitride film 3;
(4) as shown in Figure 4, oxide-film lateral openings forms: adopt oxide-film to return quarter (etched portions bottom oxide film 4 and top oxide-film 2), form bottom oxide film 4 lateral openings, the opening degree of depth is 50-150 dust, according to the compactness extent of top oxide-film 2, the etch amount of top oxide-film 2 is 1.2-2 times of bottom oxide film 4 lateral openings; This step etching adopts wet-etching technology, and wet liquid medicine can be used BOE (buffer oxide film etching agent) or DHF (dilute hydrofluoric acid);
(5) as shown in Figure 5, clean and form 8 deposits of substrate oxide-film, obtain the round and smooth chamfering at groove top; Clean and adopt SPM (dioxysulfate aqueous mixtures)+DHF (dilute hydrofluoric acid)+APM (ammoniacal liquor hydrogen peroxide mixture)+HPM (hydrochloric acid hydrogen peroxide mixture); DHF (HF: deionized water volume ratio is in the scope of 1: 50 to 1: 500) and APM (NH
4oH: H
2o
2: H
2o volume ratio is 1: 1: 5 to 1: 6: 100) scavenging period and temperature to strictly control; The cleaning temperature of DHF is generally room temperature, and scavenging period is 5-30 second; The cleaning temperature of APM is 25-45 ℃, and scavenging period is 15 seconds to 2 minutes.Under the prerequisite of fully cleaning defect, (cleaning is exactly into the cleaning before boiler tube, micro-organic substance, particle, metal impurities are cleaned), reduce the loss of top oxide-film 2 as far as possible, guarantee the pattern of subsequent oxidation film deposit, and when injecting, buried layer provides better protection to active area, substrate oxide-film 8 can adopt thermal oxidation technology to form, and thickness is at 100-200 dust;
(6) as shown in Figure 6, oxide-film 5 deposits, can be used APCVD, LPCVD or PECVD mode, and the thickness of oxide-film 5 is 600-1000 dust;
(7) as shown in Figure 7, oxide-film returns and carves the sidewall protection that is formed with source region; This step adopts dry etch process, and channel bottom is carved into the end (removing the substrate oxide-film 8 of channel bottom completely, in order to avoid stop follow-up Implantation), and removes partial oxide film 5 to be formed with the sidewall protection in source region; The oxide-film (being formed by stacking by top oxide-film 2 and oxide-film 5) at top is also removed by partial etching simultaneously, the etch amount of the oxide-film at top does not need accurate control, because it was just formed by stacking by top oxide-film 2 and oxide-film 5 originally, thick more a lot of than channel bottom, lose a little and morely also have no relations, but when dry etching, the oxide-film of bottom carves how many in principle, and the oxide-film at top is also that corresponding loss is how many;
(8) as shown in Figure 8; according to requirement on devices, carry out Implantation: according to requirement on devices, channel bottom is carried out to buried layer 6 and inject; the oxide-film (being oxide-film 5 and top oxide-film 2) at sidewall and top provides protection to active area simultaneously, avoids Implantation to active area.
(9) as shown in Figure 9, the oxide-film etching of top and sidewall, remove by the oxide-film (removing top oxide-film 2 and oxide-film 5) of step (8) doping, and to control active area oxide film sidewall (be part substrate oxide-film 8 and the bottom oxide film 4 below etching nitride film 3 to etching, bottom oxide film 4 can form lateral openings between nitride film 3 and silicon substrate 1, and the degree of depth of controlling this lateral openings is less than 150 dusts); This step adopts wet-etching technology, and wet liquid medicine can be used BOE (buffer oxide film etching agent) or DHF (dilute hydrofluoric acid);
(10) as shown in figure 10, again forming substrate oxide-film and HDP fills: again form substrate oxide-film 9 and can use thermal oxidation technology, the thickness of substrate oxide-film 9 is 100-300 dust, and its effect is when HDP fills, to avoid the infringement of plasma bombardment to active area and groove; Last filling high density degree plasma oxidation film (HDP) 7, forms the isolation of device.
As stated above, obtained having the fleet plough groove isolation structure of fine pattern, last HDP fills and also shows not formation cavity, and top chamfer is very round and smooth (being shown in Figure 19) also.And due to the existence that has buried layer to inject, be convenient to the formation of bipolar transistor part of the device of SiGe BICMOS.
Claims (10)
1. the ONO of usining forms a method for shallow ditch groove structure as hard mask layer, it is characterized in that, comprises the steps:
(1) deposit bottom oxide film successively, nitride film and top oxide-film on silicon substrate, form ONO structure;
(2) etching forms shallow trench;
(3) nitride film returns quarter;
(4) oxide-film lateral openings forms;
(5) clean and form the deposit of substrate oxide-film, obtain the round and smooth chamfering at groove top;
(6) oxide-film deposit;
(7) oxide-film returns and carves the sidewall protection that is formed with source region;
(8) according to requirement on devices, channel bottom is carried out to buried layer and inject, the oxide-film at sidewall and top provides protection to active area, avoids Implantation to active area;
(9) the oxide-film etching of top and sidewall, controls active area oxide film sidewall to etching;
(10) again forming substrate oxide-film and HDP fills.
2. as claimed in claim 1ly using ONO and as hard mask layer, form the method for shallow ditch groove structure, it is characterized in that, in step (1), thermal oxidation technology is used in the deposit of described bottom oxide film, and its thickness is 50-200 dust; Low pressure chemical gaseous phase deposition technique or plasma enhanced chemical gaseous phase deposition technique are used in the deposit of described nitride film, and its thickness is 100-600 dust; The deposit of described top oxide-film adopts normal pressure chemical gaseous phase deposition technique, low pressure chemical gaseous phase deposition technique or plasma enhanced chemical gaseous phase deposition technique, and its thickness is 1000-2000 dust.
3. as claimed in claim 1ly using ONO and as hard mask layer, form the method for shallow ditch groove structure, it is characterized in that, in step (2), use common dry etching to form shallow trench, the degree of depth of this shallow trench is 3000-5000 dust.
4. as claimed in claim 1ly using ONO and as hard mask layer, form the method for shallow ditch groove structure, it is characterized in that, in step (3), described nitride film returns carves the wet-etching technology that uses hot phosphoric acid, returning and carving the degree of depth is 100-300 dust, described nitride film returns and must before step (4) oxide-film lateral openings, complete quarter, guarantees the vertical profile of nitride film.
5. as claimed in claim 1ly using ONO and as hard mask layer, form the method for shallow ditch groove structure, it is characterized in that, in step (4), return and carve part bottom oxide film and top oxide-film, form bottom oxide film lateral openings, the opening degree of depth is 50-150 dust, and the etch amount of top oxide-film is 1.2-2 times of bottom oxide film lateral openings; This step adopts wet-etching technology, and wet liquid medicine is used buffer oxide film etching agent or dilute hydrofluoric acid.
6. as claimed in claim 1ly using ONO and as hard mask layer, form the method for shallow ditch groove structure, it is characterized in that, in step (5), described cleaning adopts dioxysulfate aqueous mixtures+dilute hydrofluoric acid+ammoniacal liquor hydrogen peroxide mixture+hydrochloric acid hydrogen peroxide mixture, HF in this dilute hydrofluoric acid: the volume ratio of deionized water in the scope of 1: 50 to 1: 500, NH in this ammoniacal liquor hydrogen peroxide mixture
4oH: H
2o
2: H
2the volume ratio of O is 1: 1: 5 to 1: 6: 100; The cleaning temperature of this dilute hydrofluoric acid is room temperature, and scavenging period is 5-30 second; The cleaning temperature of this ammoniacal liquor hydrogen peroxide mixture is 25-45 ℃, and scavenging period is 15 seconds-2 minutes; Described substrate oxide-film adopts thermal oxidation technology to form, and its thickness is at 100-200 dust.
7. as claimed in claim 1ly using ONO and as hard mask layer, form the method for shallow ditch groove structure, it is characterized in that, in step (6), use normal pressure chemical gaseous phase deposition technique, low pressure chemical gaseous phase deposition technique or plasma enhanced chemical gaseous phase deposition technique deposition oxidation film, the thickness of this oxide-film is 600-1000 dust.
8. as claimed in claim 1ly using ONO and as hard mask layer, form the method for shallow ditch groove structure; it is characterized in that; in step (7); adopt dry etching to return oxide-film at quarter; remove the substrate oxide-film of channel bottom, and the oxide-film of removing part steps (6) deposit is to be formed with the sidewall protection in source region.
9. as claimed in claim 1ly using ONO and as hard mask layer, form the method for shallow ditch groove structure, it is characterized in that, in step (9), carry out the etching of the oxide-film of top and sidewall, remove by the oxide-film of step (8) doping, and part substrate oxide-film and bottom oxide film below etching nitride film, bottom oxide film can form lateral openings between nitride film and silicon substrate, and the degree of depth of controlling this lateral openings is less than 150 dusts; This step adopts wet-etching technology, and wet liquid medicine is used buffer oxide film etching agent or dilute hydrofluoric acid.
10. as claimed in claim 1ly using ONO and as hard mask layer, form the method for shallow ditch groove structure, it is characterized in that, in step (10), use thermal oxidation technology to form substrate oxide-film, the thickness of this substrate oxide-film is 100-300 dust, and its effect is when HDP fills, to avoid the infringement of plasma bombardment to active area and groove; Finally fill HDP, form the isolation of device.
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| CN104217988A (en) * | 2014-07-01 | 2014-12-17 | 重庆中科渝芯电子有限公司 | Manufacturing method for deep-groove isolation structure |
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| CN1739195A (en) * | 2002-01-04 | 2006-02-22 | 印芬龙科技股份有限公司 | Double pullback method of filling an isolation trench including two silicon nitride etching process |
| US7179717B2 (en) * | 2005-05-25 | 2007-02-20 | Micron Technology, Inc. | Methods of forming integrated circuit devices |
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| KR100561522B1 (en) * | 2003-12-30 | 2006-03-16 | 동부아남반도체 주식회사 | Method For Fabricating Of Shallow Trench Isolation Of Semiconductor Device |
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| US7179717B2 (en) * | 2005-05-25 | 2007-02-20 | Micron Technology, Inc. | Methods of forming integrated circuit devices |
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