CN102376569B - Manufacturing method of micrometering structure for position measurement in laser processing - Google Patents
Manufacturing method of micrometering structure for position measurement in laser processing Download PDFInfo
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- CN102376569B CN102376569B CN 201110310962 CN201110310962A CN102376569B CN 102376569 B CN102376569 B CN 102376569B CN 201110310962 CN201110310962 CN 201110310962 CN 201110310962 A CN201110310962 A CN 201110310962A CN 102376569 B CN102376569 B CN 102376569B
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Abstract
The invention discloses a manufacturing method of a micrometering structure for position measurement in laser processing. The manufacturing method comprises the following steps: firstly, designing a resistor structure, selecting a type of the resistor structure, and then producing high doping sections by using a traditional technology, and producing low doping sections by a two-step annealing process, wherein the traditional technology comprises dielectric layer deposition, photolithography and dielectric layer etching, etc. to produce contact holes, metal connecting lines and pressure welding block sections, thus completing the manufacture of the resistor structure; and in the manufacturing process of the resistor structure, a series of resistors are produced according to a series of coordinate position configuration, and the resistors of the structure are placed in different positions on a wafer by photolithography as a testing structure for position measurement in the laser processing. By adopting the production flow of the special two-step annealing process, according to the invention, the manufacturing method ensures the measurability of the manufactured resistance test structure, and at the same time the measured value can reflect the positioning accuracy in the laser processing, thereby sufficiently achieving the test measuring effect of the positioning error of wafers.
Description
Technical field
The invention belongs to the semiconductor fabrication scope, particularly a kind of micrometering that measures for the laser processing position tries structure making process.
Background technology
Laser is widely used in the processing of semi-conducting material and processes, and comprises laser annealing, laser assisted thin film deposition, the laser recrystallization growth of material etc.
The light beam bundle spot that is used for laser processing is normally much smaller than wafer, and under present technical conditions, laser beam can not carry out in the mode that covers whole wafer for the effect of substrate wafer sheet, can only be that carry out partly one of a part.Usually adopt laser beam to do scanning with respect to material surface, stepping, perhaps the stepping translation that adds scanning is moved, realize line by line, perhaps by processing process.
For line by line, by type of action, exist the row between, between connection problem.For bad linking, can be divided into again two class problems, the one, joining place two row or two have small overlapping, although then the overlapping region is very little, but the quantity of affected microelectronic component has a lot, this mainly is that current techniques has been in the magnitude of 32 nanometers because of the more small cause of microelectronic component size.The 2nd, between two row, there is small space between two, similarly, affected by this and the electronic devices and components quantity that is not lasered processing has a lot, crudy can not guarantee equally.
For the problem in the above practice, a kind of effective treatment measures, it is the scribing road width that takes full advantage of between the chip, namely order scanning or stepping, strictly along the transversely arranged direction of chip array left or the right side carry out, make the upper lower edge (also comprising in case of necessity border, the left and right sides) of light beam bundle spot all fall within the scribing road between chip array, thus, can avoid between the scan line the bad problem of linking between the field of step-scan.
When requiring scanning, perhaps step-scan is along the direction of chip array, and the edge of sewwp beam spot naturally, has also just produced the problem of wafer aligning when falling within scribing the road in.Because scribing road width is tens microns magnitude, the requirement that this moment, wafer was aimed at not is very high, and alignment tolerance and the same magnitude of scribing road width are at tens microns.For instance, alignment precision can relax to 10 microns or wider; If certainly can access higher alignment precision, then just better to the control effect of technique.
A kind of preferably wafer Pointing strategy adopts with process cavity and is separated, that is be aligning guide independently, carry out the aligning of wafer, the wafer behind the aligning is sent on the process cavity sheet platform by the precision optical machinery hand again, carries out there follow-up laser processing again and processes.
Adopt separate type on time, the sheet platform that is used to form the actions such as laser beam scanning in alignment tab platform and the technique is two cover self-contained units, so this each self-defining direct of travel of two sheet platforms also has origin of coordinates position etc. all to be not quite similar, and can produce systematic error.The process of the biography sheet of precision optical machinery hand, film releasing also can be introduced extra alternate position spike in addition.
Poor in order to calibrate aligned position, need to measure the size of alignment error value, introducing is processed all relevant micrometering examination structure with position and laser processing for this reason, and the measurement that tries the structure electrology characteristic by micrometering extracts the position position error.The electric resistance structure that the present invention namely measures for position in a kind of laser processing is determined and the manufacture method flow process that such micrometering tries structure is produced in description.
Summary of the invention
The purpose of this invention is to provide a kind of micrometering that measures for the laser processing position and try structure making process, it is characterized in that, described micrometering examination structure is a kind of electric resistance structure, and concrete making step is:
1) at first design electric resistance structure: metal pressure-welding block district 1 links to each other by the higher high-doped zone 2 of contact hole 4 and doping content, and high-doped zone 2 links to each other with the lower doped regions 3 of doping content again; Here high-doped zone and doped regions are homotypes, namely all are that N-type is mixed, and perhaps all are that the P type mixes;
2) choose the electric resistance structure type, if substrate is N-type, then produce P type resistance thereon, if substrate is the P type, then make N-type resistance thereon;
3) to make P type resistance as example, making step is as follows:
Adopt conventional art, produce high-doped zone 2 at substrate, carry out before this photoetching, the zone outside the high-doped zone 2 is sheltered with photoresist; Then to high-doped zone 2 B Implanted ions, Implantation Energy is at 30keV to 100keV, and implantation dosage is more than every square centimeter of 1e15; Remove photoresist after the cleaning, carry out Conventional Thermal Annealing, activate the ion that injects;
4) adopt the double annealing legal system to make doped regions 3, still adopt step 3) the photoetching mode that adds injection carry out the doping of doped regions 3, the dosage of B Implanted ion is at every square centimeter of 1e13 to 1e15; Use conventional art that doped regions 3 is carried out part annealing, so that impurity partly activates, activity ratio is 30%～50%; Use at last laser annealing to carry out double annealing, through a step annealing after this, the doping ion becomes complete state of activation, play a decisive role for resistance value, and will be the doping content of doped regions 3, and laser annealing activate the situation of this region doping impurity;
5) adopt traditional technology to comprise dielectric layer deposit, photoetching and dielectric layer etching, produce contact hole 4; And adopt traditional technology to carry out metal level deposition, photoetching, metal level etching and passivation, and produce metal connecting line and press welding block zone 1, finish the making of electric resistance structure; The making of this electric resistance structure is to arrange according to a series of coordinate position simultaneously to produce a series of resistance, by lithography step these electric resistance structures is placed into diverse location place on the wafer, the test structure that measures as position in the laser processing;
6) for the electric resistance structure that completes, test its resistance, and extract position error.
Described extraction position error, for the electric resistance structure that is placed on the somewhere, if there is no position error, then the processing of laser beam is to cover whole test structure, thereby produces intact electric resistance structure; If but there is position error, then the processing of laser beam only relates to a part of electric resistance structure, thereby the electric resistance structure of producing is incomplete; By testing the resistance value of produced electric resistance structure, namely to judge which electric resistance structure and be successful, it is unsuccessful which electric resistance structure is made; Because the electric resistance structure of made and measurement is arranged according to a series of coordinate position, therefore test data is carried out making after the processing of statistical the value of wafer positioning error during laser processing again.
The invention has the beneficial effects as follows, for measuring the poor electric resistance structure in wafer position location in the laser processing processing, set special double annealing legal system and made flow process, wherein the first step can adopt conventional art to carry out incomplete annealing, and second step carries out the processing of laser annealing, after adopting such two-step method, can either guarantee the measurability of made resistance test structure, make simultaneously final measured value can reflect the positioning accuracy situation of laser processing, can guarantee the thermometrically effect of wafer position error.
Description of drawings
Fig. 1 is the electric resistance structure that measures the wafer position error in the laser processing,
Fig. 2 is that the electric resistance structure that measures the wafer position error in the laser processing is made flow process.
Among Fig. 1,1. are metal and press welding block zones; 2. be high-doped zone; 3. be doped regions; 4. be the contact hole between metal and the doped region.
Embodiment
The present invention proposes a kind of micrometering that measures for the laser processing position and tries structure making process, is explained below in conjunction with accompanying drawing.
Described micrometering examination structure is a kind of electric resistance structure; Concrete making step is:
1) as shown in Figure 1 electric resistance structure of design at first, among the figure, metal pressure-welding block district 1 links to each other by the higher high-doped zone 2 of contact hole 4 and doping content, and high-doped zone 2 links to each other with the lower doped regions 3 of doping content again; Here high-doped zone and doped regions are homotypes, namely all are that N-type is mixed, and perhaps all are that the P type mixes;
2) choose the electric resistance structure type, if substrate is N-type, then produce P type resistance thereon, if P type substrate is then made N-type resistance thereon;
3) to make P type resistance as example, making step is as follows: (as shown in Figure 2)
Adopt conventional art, produce high-doped zone 2, carry out before this photoetching, the zone outside the high-doped zone 2 is sheltered with photoresist; Then to high-doped zone 2 B Implanted ions, Implantation Energy is at 30keV to 100keV, and implantation dosage is at every square centimeter of 1e15; Carry out Conventional Thermal Annealing after removing photoresist, for example adopt 950 degree, 30 minutes, the boiler tube annealing under the nitrogen atmosphere activated the ion that injects;
4) adopt the double annealing legal system to make doped regions 3, still step 3) the employing photoetching mode that adds injection carry out the doping of doped regions 3, the dosage of B Implanted ion for instance, is every square centimeter of 1e14; Use conventional art that doped regions 3 is carried out part annealing, such as, can adopt the method for short annealing to anneal, annealing conditions can be determined via experiment, for instance, if experiment is determined under 950 degree temperature, short annealing can obtain 100% annealing effect 50 seconds, on the basis of this condition, perhaps effective annealing time is down to 20-30 second so, perhaps keeps annealing time constant, and Temperature Setting is reduced to 850 degree, can obtain incomplete annealing, thereby so that impurity partly activates, the control activity ratio is 30%～50%; Use at last laser annealing to carry out double annealing, annealing conditions is to control the energy density of laser action at every square centimeter of 800mJ-4J; Through a step annealing after this, the doping ion becomes complete state of activation, play a decisive role for resistance value, and will be the doping content of doped regions 3, and laser annealing activate the situation of this region doping impurity;
5) the traditional technology of described employing comprises dielectric layer deposit, photoetching and dielectric layer etching, produces contact hole 4; And adopt traditional technology to carry out metal level deposition, photoetching, metal level etching and passivation, and produce metal connecting line and press welding block zone 1, finish the making of electric resistance structure; The making of this electric resistance structure is to arrange according to a series of coordinate position simultaneously to produce a series of resistance, by lithography step these electric resistance structures is placed into diverse location place on the wafer, the test structure that measures as position in the laser processing;
6) for the electric resistance structure that completes, test its resistance, and extract location information and position error.
Described extraction position error refers to, for the electric resistance structure that is placed on the somewhere, and if there is no position error, then the processing of laser beam is to cover whole test structure, thereby produces intact electric resistance structure; If but there is position error, then the processing of laser beam only relates to a part of electric resistance structure, thereby the electric resistance structure of producing is incomplete; By testing the resistance value of produced electric resistance structure, namely to judge which electric resistance structure and be successful, it is unsuccessful which electric resistance structure is made; Because the electric resistance structure of made and measurement is arranged according to a series of coordinate position, therefore test data is carried out can making after the processing of statistical the value of wafer positioning error during laser processing again.
The annealing of employing two-step method can guarantee that produced electric resistance structure is testable, and can reflect the situation of laser processing.If not taking two-step method annealing, such as just carry out a laser annealing, so because there is position error, the part of some resistance is not annealed, this local impurity is not activated fully, then the measurement of resistance value can not obtain significant definite data, and the scheme that whole position error measures can failure.But adopt two-step method then not have problems, owing to carried out the incomplete annealing of the first step, resistance value can be surveyed, and simultaneously, the size of this resistance value depends on again the effect of for the second time laser annealing, therefore can guarantee required accuracy in measurement.
Claims (2)
1. one kind is used for the micrometering examination structure making process that the laser processing position measures, and it is characterized in that, described micrometering examination structure is a kind of electric resistance structure, and concrete making step is:
1) at first design electric resistance structure: metal pressure-welding block district (1) links to each other by contact hole (4) high-doped zone (2) higher with doping content, and high-doped zone (2) the again doped regions (3) lower with doping content links to each other; Here high-doped zone and doped regions are homotypes, namely all are that N-type is mixed, and perhaps all are that the P type mixes;
2) choose the electric resistance structure type, if substrate is N-type, then produce P type resistance thereon, if P type substrate is then made N-type resistance thereon;
3) to make P type resistance as example, making step is as follows:
Adopt conventional art, produce high-doped zone (2), carry out before this photoetching, the zone outside the high-doped zone (2) is sheltered with photoresist; Then to high-doped zone (2) B Implanted ion, Implantation Energy is at 30keV to 100keV, and implantation dosage is more than every square centimeter of 1e15; Remove photoresist and carry out Conventional Thermal Annealing after cleaning, activate the ion that injects;
4) adopt the double annealing legal system to make doped regions (3), still adopt step 3) the photoetching mode that adds injection carry out the doping of doped regions (3), the dosage of B Implanted ion is at every square centimeter of 1e13 to 1e15; Use conventional art that doped regions (3) is carried out part annealing, so that impurity partly activates, activity ratio is 30%～50%; Use at last the technology of laser annealing to carry out double annealing, through a step annealing after this, the doping ion becomes complete state of activation, plays a decisive role for resistance value, to be the doping content of doped regions (3), and laser annealing activate the situation of this region doping impurity;
5) the traditional technology of described employing comprises dielectric layer deposit, photoetching and dielectric layer etching, produces contact hole (4); And adopt traditional technology to carry out metal level deposition, photoetching, metal level etching and passivation, and produce metal connecting line and press welding block zone (1), finish the making of electric resistance structure; This electric resistance structure of finishing is to arrange according to a series of coordinate position simultaneously to produce a series of resistance, and these electric resistance structures are placed into diverse location place on the wafer by photoetching, the test structure that measures as position in the laser processing;
6) for the electric resistance structure that completes, test its resistance, and extract position error.
2. the described micrometering that measures for the laser processing position tries structure making process according to claim 1, it is characterized in that, described extraction position error, for the electric resistance structure that is placed on the somewhere, if there is no position error, then the processing of laser beam is to cover whole test structure, thereby produces intact electric resistance structure; If but there is position error, then the processing of laser beam only relates to a part of electric resistance structure, thereby the electric resistance structure of producing is incomplete; By testing the resistance value of produced electric resistance structure, namely to judge which electric resistance structure and be successful, it is unsuccessful which electric resistance structure is made; Because the electric resistance structure of made and measurement is arranged according to a series of coordinate position, therefore test data is carried out making after the processing of statistical the value of wafer positioning error during laser processing again.
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