CN102376569A - Manufacturing method of micrometering structure for position measurement in laser processing - Google Patents
Manufacturing method of micrometering structure for position measurement in laser processing Download PDFInfo
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- CN102376569A CN102376569A CN2011103109623A CN201110310962A CN102376569A CN 102376569 A CN102376569 A CN 102376569A CN 2011103109623 A CN2011103109623 A CN 2011103109623A CN 201110310962 A CN201110310962 A CN 201110310962A CN 102376569 A CN102376569 A CN 102376569A
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Abstract
The invention discloses a manufacturing method of a micrometering structure for position measurement in laser processing. The manufacturing method comprises the following steps: firstly, designing a resistor structure, selecting a type of the resistor structure, and then producing high doping sections by using a traditional technology, and producing low doping sections by a two-step annealing process, wherein the traditional technology comprises dielectric layer deposition, photolithography and dielectric layer etching, etc. to produce contact holes, metal connecting lines and pressure welding block sections, thus completing the manufacture of the resistor structure; and in the manufacturing process of the resistor structure, a series of resistors are produced according to a series of coordinate position configuration, and the resistors of the structure are placed in different positions on a wafer by photolithography as a testing structure for position measurement in the laser processing. By adopting the production flow of the special two-step annealing process, according to the invention, the manufacturing method ensures the measurability of the manufactured resistance test structure, and at the same time the measured value can reflect the positioning accuracy in the laser processing, thereby sufficiently achieving the test measuring effect of the positioning error of wafers.
Description
Technical field
The invention belongs to the semiconductor fabrication scope, particularly a kind of micrometering examination structure making process that is used for the measurement of laser processing position.
Background technology
Laser is widely used in the processed of semi-conducting material, comprises laser annealing, laser assisted film deposition, the laser recrystallization growth of material etc.
The light beam bundle spot that is used for laser processing is normally much smaller than wafer, and under technical conditions at present, laser beam can not carry out with the mode that covers whole wafer for the effect of substrate wafer sheet, can only be that carry out partly one of a part.Usually adopt laser beam to do scanning with respect to material surface, stepping, perhaps the stepping translation that adds scanning is moved, realize line by line, perhaps by processed.
For line by line, by type of action, exist the row between, between connection problem.For bad linking; Can be divided into two types of problems again; The one, joining place two row or two have small overlapping, although then the overlapping region is very little, the quantity of affected microelectronic component has a lot; This mainly is that current techniques has been in the magnitude of 32 nanometers because of the more small cause of microelectronic component size.The 2nd, between two row, there is small space between two, likewise, influenced by this and the electronic devices and components quantity that is not lasered processing has a lot, crudy can not guarantee equally.
To the problem in the above practice, a kind of effective treatment measures are the street width that make full use of between the chip; Order scanning just or stepping; Strictly along the transversely arranged direction of chip array left or the right side carry out, make the last lower edge (also comprising border, the left and right sides in case of necessity) of light beam bundle spot all fall within the street between chip array, thus; Can avoid between the scan line the bad problem of linking between the field of step-scan.
When requiring scanning, perhaps step-scan is along the direction of chip array, and the edge of sewwp beam spot naturally, has also just produced the problem that wafer is aimed at when falling within the street.Because the street width is tens microns magnitude, the requirement that this moment, wafer was aimed at not is very high, and alignment tolerance and the same magnitude of street width are at tens microns.For instance, alignment precision can relax to 10 microns or wideer; If it is can access higher alignment precision certainly, then just better to the control effect of technology.
A kind of wafer is preferably aimed at the strategy employing and is separated with process cavity; That is be aligning guide independently; Carry out the aligning of wafer, the wafer behind the aligning is sent on the process cavity sheet platform by the precision optical machinery hand again, carries out follow-up laser processing there again and handles.
Adopt separate type on time; The sheet platform that is used to form actions such as laser beam scanning in alignment tab platform and the technology is two cover self-contained units; So this each self-defining direct of travel of two sheet platforms also has origin of coordinates position etc. all to be not quite similar, and can produce systematic error.The process of the biography sheet of precision optical machinery hand, film releasing also can be introduced extra alternate position spike in addition.
Poor in order to calibrate aligned position, need to measure the size of alignment error value, introducing is handled all relevant micrometering with position and laser processing and is tried structure for this reason, and the measurement that tries the structure electrology characteristic through micrometering extracts the location positioning error.The electric resistance structure that the present invention promptly measures to position in a kind of laser processing is confirmed and the manufacture method flow process that such micrometering tries structure is produced in description.
Summary of the invention
The purpose of this invention is to provide a kind of micrometering examination structure making process that the laser processing position measures that is used for, it is characterized in that said micrometering examination structure is a kind of electric resistance structure, concrete making step is:
1) at first design electric resistance structure: metal pressure-welding block district 1 links to each other than higher high-doped zone 2 with doping content through contact hole 4, and high-doped zone 2 links to each other with the lower doped regions 3 of doping content again; Here high-doped zone and doped regions are homotypes, promptly all are that the N type mixes, and perhaps all are that the P type mixes;
2) choose the electric resistance structure type,, then produce P type resistance above that,, then make N type resistance above that if substrate is the P type if substrate is the N type;
3) be example to make P type resistance, making step is following:
Adopt conventional art, on substrate, produce high-doped zone 2, carry out photoetching before this, the zone outside the high-doped zone 2 is sheltered with photoresist; Then high-doped zone 2 is injected the boron ion, inject energy at 30keV to 100keV, implantation dosage is more than every square centimeter of 1e15; Remove photoresist after the cleaning, carry out conventional thermal annealing, activate the ion that is injected;
4) adopt the double annealing legal system to make doped regions 3, the mode that still adopts the photoetching of step 3) to add injection is carried out the doping of doped regions 3, and the dosage that injects the boron ion is at every square centimeter of 1e13 to 1e15; Use conventional art that doped regions 3 is carried out part annealing, make impurity partly activate, activity ratio is 30%～50%; Use laser annealing to carry out double annealing at last, through this back one step annealing, dopant ion becomes complete state of activation, play a decisive role for resistance value, and will be the doping content of doped regions 3, and laser annealing activate the situation of this region doping impurity;
5) adopt traditional technology to comprise dielectric layer deposit, photoetching and dielectric layer etching, produce contact hole 4; And adopt traditional technology to carry out layer metal deposition, photoetching, metal level etching and passivation, and produce metal connecting line and press welding block zone 1, accomplish the making of electric resistance structure; The making of this electric resistance structure is to arrange according to a series of coordinate position simultaneously to produce a series of resistance, through lithography step these electric resistance structures is placed into the diverse location place on the wafer, as the test structure of position measurement in the laser processing;
6), test its resistance, and extract position error for the electric resistance structure that completes.
Said extraction position error, for the electric resistance structure that is placed on the somewhere, if there is not position error, then the processing of laser beam is to cover whole test structure, thereby produces intact electric resistance structure; If but there is position error, then the processing of laser beam only relates to a part of electric resistance structure, thereby the electric resistance structure of producing is incomplete; Through testing the resistance value of produced electric resistance structure, promptly to judge which electric resistance structure and make successfully, it is unsuccessful that which electric resistance structure is made; Because the electric resistance structure of made and measurement is arranged according to a series of coordinate position, so test data carried out make after the processing of statistical the value of wafer position error in the laser processing again.
The invention has the beneficial effects as follows; To the electric resistance structure that measures wafer position location difference in the laser processing processing; Set special double annealing legal system and made flow process, wherein the first step can adopt conventional art to carry out incomplete annealing, and second step was carried out the processing of laser annealing; After adopting such two-step method; Can either guarantee the measurability of made resistance test structure, make final measured value can reflect the positioning accuracy situation of laser processing simultaneously, can guarantee the thermometrically effect of wafer position error.
Description of drawings
Fig. 1 is the electric resistance structure of measurement wafer position error in the laser processing,
Fig. 2 makes flow process for the electric resistance structure that measures the wafer position error in the laser processing.
Among Fig. 1,1. are metal and press welding block zones; 2. be high-doped zone; 3. be doped regions; 4. be the contact hole between metal and the doped region.
Embodiment
The present invention proposes a kind of micrometering examination structure making process that the laser processing position measures that is used for, and explains below in conjunction with accompanying drawing.
Said micrometering examination structure is a kind of electric resistance structure; Concrete making step is:
1) at first design electric resistance structure as shown in Figure 1, among the figure, metal pressure-welding block district 1 links to each other than higher high-doped zone 2 with doping content through contact hole 4, and high-doped zone 2 links to each other with the lower doped regions 3 of doping content again; Here high-doped zone and doped regions are homotypes, promptly all are that the N type mixes, and perhaps all are that the P type mixes;
2) choose the electric resistance structure type,, then produce P type resistance above that, if P type substrate is then made N type resistance above that if substrate is the N type;
3) be example to make P type resistance, making step is following: (as shown in Figure 2)
Adopt conventional art, produce high-doped zone 2, carry out photoetching before this, the zone outside the high-doped zone 2 is sheltered with photoresist; Then high-doped zone 2 is injected the boron ion, inject energy at 30keV to 100keV, implantation dosage is at every square centimeter of 1e15; Carry out conventional thermal annealing after removing photoresist, for example adopt 950 degree, 30 minutes, the boiler tube annealing under the nitrogen atmosphere activated the ion that is injected;
4) adopt the double annealing legal system to make doped regions 3, still the employing photoetching of the step 3) mode that adds injection is carried out the doping of doped regions 3, injects the dosage of boron ion, for instance, is every square centimeter of 1e14; Use conventional art that doped regions 3 is carried out part annealing, such as, can adopt the method for short annealing to anneal; Annealing conditions can be confirmed via experiment, for instance, confirms under 950 degree temperature if test; Short annealing can obtain 100% annealing effect 50 seconds, on the basis of this condition, perhaps effective annealing time is reduced to 20-30 second so; Perhaps keep annealing time constant, and the temperature setting is reduced to 850 degree, can obtain incomplete annealing; Thereby make impurity partly activate, the control activity ratio is 30%～50%; Use laser annealing to carry out double annealing at last, annealing conditions is to control the energy density of laser action at every square centimeter of 800mJ-4J; Through this back one step annealing, dopant ion becomes complete state of activation, play a decisive role for resistance value, and will be the doping content of doped regions 3, and laser annealing activate the situation of this region doping impurity;
5) the traditional technology of said employing comprises dielectric layer deposit, photoetching and dielectric layer etching, produces contact hole 4; And adopt traditional technology to carry out layer metal deposition, photoetching, metal level etching and passivation, and produce metal connecting line and press welding block zone 1, accomplish the making of electric resistance structure; The making of this electric resistance structure is to arrange according to a series of coordinate position simultaneously to produce a series of resistance, through lithography step these electric resistance structures is placed into the diverse location place on the wafer, as the test structure of position measurement in the laser processing;
6) for the electric resistance structure that completes, test its resistance, and extract location information and position error.
Said extraction position error is meant that for the electric resistance structure that is placed on the somewhere, if there is not position error, then the processing of laser beam is to cover whole test structure, thereby produces intact electric resistance structure; If but there is position error, then the processing of laser beam only relates to a part of electric resistance structure, thereby the electric resistance structure of producing is incomplete; Through testing the resistance value of produced electric resistance structure, promptly to judge which electric resistance structure and make successfully, it is unsuccessful that which electric resistance structure is made; Because the electric resistance structure of made and measurement is arranged according to a series of coordinate position, so test data carried out to make after the processing of statistical the value of wafer position error in the laser processing again.
The annealing of employing two-step method can guarantee that produced electric resistance structure is testable, and can reflect the situation of laser processing.If not taking two-step method annealing; Such as just carry out a laser annealing; Because there is position error, do not annealed in the part of some resistance so, and this local impurity is not activated fully; Then the measurement of resistance value can not obtain significant definite data, and the scheme that whole position error measures can be failed.But adopt two-step method then not have this type of problem, owing to carried out the incomplete annealing of the first step, resistance value can be surveyed, and simultaneously, the size of this resistance value depends on the effect of laser annealing for the second time again, therefore can guarantee required accuracy in measurement.
Claims (2)
1. one kind is used for the micrometering examination structure making process that the laser processing position measures, and it is characterized in that, said micrometering examination structure is a kind of electric resistance structure, and concrete making step is:
1) at first design electric resistance structure: metal pressure-welding block district (1) links to each other than higher high-doped zone (2) with doping content through contact hole (4), and the doped regions that high-doped zone (2) is lower with doping content again (3) links to each other; Here high-doped zone and doped regions are homotypes, promptly all are that the N type mixes, and perhaps all are that the P type mixes;
2) choose the electric resistance structure type,, then produce P type resistance above that, if P type substrate is then made N type resistance above that if substrate is the N type;
3) be example to make P type resistance, making step is following:
Adopt conventional art, produce high-doped zone (2), carry out photoetching before this, the zone outside the high-doped zone (2) is sheltered with photoresist; Then high-doped zone (2) is injected the boron ion, inject energy at 30keV to 100keV, implantation dosage is more than every square centimeter of 1e15; Remove photoresist and carry out conventional thermal annealing after cleaning, activate the ion that is injected;
4) adopt the double annealing legal system to make doped regions (3), the mode that still adopts the photoetching of step 3) to add injection is carried out the doping of doped regions (3), and the dosage that injects the boron ion is at every square centimeter of 1e13 to 1e15; Use conventional art that doped regions (3) is carried out part annealing, make impurity partly activate, activity ratio is 30%～50%; Use the technology of laser annealing to carry out double annealing at last; Through this back one step annealing, dopant ion becomes complete state of activation, plays a decisive role for resistance value; To be the doping content of doped regions (3), and laser annealing activate the situation of this region doping impurity;
5) the traditional technology of said employing comprises dielectric layer deposit, photoetching and dielectric layer etching, produces contact hole (4); And adopt traditional technology to carry out layer metal deposition, photoetching, metal level etching and passivation, and produce metal connecting line and press welding block zone (1), accomplish the making of electric resistance structure; The electric resistance structure of this completion is to arrange according to a series of coordinate position simultaneously to produce a series of resistance, and these electric resistance structures are placed into the diverse location place on the wafer through photoetching, as the test structure of position measurement in the laser processing;
6), test its resistance, and extract position error for the electric resistance structure that completes.
2. according to the said micrometering examination structure making process that is used for the measurement of laser processing position of claim 1; It is characterized in that; Said extraction position error is for the electric resistance structure that is placed on the somewhere, if there is not position error; Then the processing of laser beam is to cover whole test structure, thereby produces intact electric resistance structure; If but there is position error, then the processing of laser beam only relates to a part of electric resistance structure, thereby the electric resistance structure of producing is incomplete; Through testing the resistance value of produced electric resistance structure, promptly to judge which electric resistance structure and make successfully, it is unsuccessful that which electric resistance structure is made; Because the electric resistance structure of made and measurement is arranged according to a series of coordinate position, so test data carried out make after the processing of statistical the value of wafer position error in the laser processing again.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005106939A1 (en) * | 2004-04-26 | 2005-11-10 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and methods for junction formation using optical illumination |
| CN101101922A (en) * | 2007-08-01 | 2008-01-09 | 中电华清微电子工程中心有限公司 | NPN type germanium-silicon heterogenous dual-pole transistor and its making method |
| CN101217115A (en) * | 2008-01-04 | 2008-07-09 | 清华大学 | Laser annealing technique on the wafer back of IGBT high voltage power device |
| CN102184876A (en) * | 2011-03-09 | 2011-09-14 | 清华大学 | Method for measuring wafer positioning error during laser processing |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005106939A1 (en) * | 2004-04-26 | 2005-11-10 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and methods for junction formation using optical illumination |
| CN101101922A (en) * | 2007-08-01 | 2008-01-09 | 中电华清微电子工程中心有限公司 | NPN type germanium-silicon heterogenous dual-pole transistor and its making method |
| CN101217115A (en) * | 2008-01-04 | 2008-07-09 | 清华大学 | Laser annealing technique on the wafer back of IGBT high voltage power device |
| CN102184876A (en) * | 2011-03-09 | 2011-09-14 | 清华大学 | Method for measuring wafer positioning error during laser processing |
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