CN102372500A - Method for preparing Cu diffusion doped ZnO base semiconductor by adopting laser pulse deposition method - Google Patents
Method for preparing Cu diffusion doped ZnO base semiconductor by adopting laser pulse deposition method Download PDFInfo
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- CN102372500A CN102372500A CN2011101433961A CN201110143396A CN102372500A CN 102372500 A CN102372500 A CN 102372500A CN 2011101433961 A CN2011101433961 A CN 2011101433961A CN 201110143396 A CN201110143396 A CN 201110143396A CN 102372500 A CN102372500 A CN 102372500A
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Abstract
The invention relates to a method for preparing a semiconductor thin film material. The prepared material comprises a substrate, a ZnO base layer and a diffusion layer, wherein the diffusion layer is formed by the way that deposited Cu is doped into the ZnO base layer through high temperature diffusion. A thin film is prepared by adopting a pulse laser deposition method, the substrate is (100) silicon single crystal, vacuum degree in a laser pulse cavity is 5*10<-4>Pa, deposition temperature is 450 DEG C, laser frequency is 4Hz, laser energy is 190kV, ZnO base thin film sputtering time is 40 minutes, a Cu layer is additionally plated, deposition time is 2 minutes, insulating is carried out for 30 minutes, and the prepared Cu diffusion doped ZnO base thin film is formed by naturally cooling to room temperature. The method provided by the invention is superior to the traditional sintering target sputtering coating process when being used for preparing the doped ZnO base semiconductor thin film and is more convenient when being used for preparing ZnO base semiconductor thin films in different contents.
Description
Technical field the present invention relates to a kind of method of utilizing pulse laser sediment method to prepare Cu diffusing, doping zno-based semiconductor film, belongs to technical field of semiconductor.
Background technology ZnO is a kind of broad stopband oxide semiconductor material with excellent properties; Has lot of advantages aspect electronics and the optoelectronic device applications; Be considered to the photoelectric semiconductor material of a new generation, in opto-electronic device and information material, have broad application prospects.Generally adopt sintering target as sputter coating process but prepare doped ZnO-based semiconductor film, comparatively complicated when preparation different content zno-based semiconductor film.
Summary of the invention is in order to overcome the complicated technology of existing preparation different content zno-based semiconductor film; The present invention provides a kind of method of utilizing pulse laser sediment method to prepare Cu diffusing, doping zno-based semiconductor film, preparation doped semiconductor that can be comparatively easy.
The present invention adopts pulse laser sediment method to prepare Cu diffusing, doping zno-based semiconductor film membrane method, and institute's prepared material comprises substrate, zno-based layer, diffusion layer.It is characterized in that described diffusion layer mixes for deposition Cu High temperature diffusion and gets into the diffusion layer that the zno-based layer forms.
The present invention has Cu diffusing, doping zno-based semiconductor film, adopts the pulse laser sediment method preparation, and substrate is (100) silicon single-crystal, and vacuum tightness 5 * 10 in the laser pulse chamber
-4Pa, depositing temperature are 450 ℃, laser frequency 4Hz, and laser energy 190kV, ZnO film sputtering time 40 minutes adds plating Cu layer on the basis of the above, and depositing time is 2 minutes, and 450 ℃ are incubated 30 minutes, the zno-based film of preparation Cu diffusing, doping.Film naturally cools to room temperature and forms in cavity.
It is following to adopt pulsed laser deposition to prepare Cu diffusing, doping zno-based semiconductor film technique:
(1) substrate that adopts of this experiment is 2 inches single crystalline Si (a 100) substrate, single-sided polishing.The Si sheet is immersed in the acetone, places ultrasonic generator to clean one hour, absolute ethyl alcohol ultrasonic cleaning one hour, ionized water ultrasonic cleaning one hour, taking-up places thermostatic drying chamber to dry.
(2) zno-based target, Cu target target and substrate are separately fixed on the corresponding specimen holder, the distance of adjustment substrate and target is 50mm, and the valve of screwing is then closed Vakuumkammer.
(3) open the molecular pump water coolant, opening power is opened mechanical pump, opens the side and takes out valve, opens vacuumometer after several minutes.When the system vacuum degree reaches 2
-3During Pa, close the side and take out valve, open shutdown valve, and start molecular pump.
(4) set underlayer temperature, when the system vacuum degree reaches 5 * 10
-4First preheating oven silk 3 minutes under low power when Pa is above, temperature rise rate is controlled at 15～20 ℃/minute, is warming up to the required temperature of film growth.
(5) when pressure reaches preset value in underlayer temperature and the reaction chamber, first sputter zno-based target forms layer of ZnO base film (40 minutes) on substrate, and sputter Cu target is controlled the content of Cu in the film through controlling sputtering time again.450 ℃ are incubated 30 minutes to guarantee that Cu spreads fully in the zno-based film.
Embodiment
(1) substrate cleans
The substrate that this experiment is adopted is 2 inches single crystalline Si (a 100) substrate, single-sided polishing, and its resistivity is 1.9～2.6 * 10
3Ω/cm.At first the Si sheet is immersed in the acetone, places ultrasonic generator to clean one hour, absolute ethyl alcohol ultrasonic cleaning one hour, ionized water ultrasonic cleaning one hour, taking-up places thermostatic drying chamber to dry.
(2) installation of target and substrate
Zno-based target, Cu target target and substrate are separately fixed on the corresponding specimen holder, and the distance of adjustment substrate and target is 50mm, and the valve of screwing is then closed Vakuumkammer.
(3) vacuumize
At first open the molecular pump water coolant, opening power is opened mechanical pump, opens the side and takes out valve, opens vacuumometer after several minutes; When the system vacuum degree reaches 2
-3During Pa, close the side and take out valve, open shutdown valve, and start molecular pump.
(4) substrate heating
Set underlayer temperature, when the system vacuum degree reaches 5 * 10
-4First preheating oven silk 3 minutes under low power when Pa is above, temperature rise rate is controlled at 15～20 ℃/minute, is warming up to the required temperature of film growth.
(5) preparation of Cu diffusing, doping zno-based sample
When pressure reached preset value in underlayer temperature and the reaction chamber, first sputter zno-based target formed layer of ZnO base film (40 minutes) on substrate, and sputter Cu target is controlled the content of Cu in the film through controlling sputtering time again.450 ℃ are incubated 30 minutes to guarantee that Cu spreads fully in the zno-based film.
Claims (2)
1. a pulsed laser deposition prepares Cu diffusing, doping zno-based method for semiconductor, it is characterized in that: the diffusion layer of preparation mixes for deposition Cu High temperature diffusion and gets into the diffusion layer that the zno-based layer forms, and institute's prepared material comprises substrate, zno-based layer, diffusion layer.
2. a kind of pulsed laser deposition according to claim 1 prepares Cu diffusing, doping zno-based method for semiconductor, and it is characterized in that: substrate is (100) silicon single-crystal, and vacuum tightness 5 * 10 in the laser pulse chamber
-4Pa, depositing temperature are 450 ℃, laser frequency 4Hz; Laser energy 190kV, ZnO film sputtering time 40 minutes adds plating Cu layer; Depositing time is 2 minutes; 450 ℃ are incubated 30 minutes, the zno-based film of preparation Cu diffusing, doping, and the zno-based film of prepared Cu diffusing, doping naturally cools to room temperature and forms in cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101433961A CN102372500A (en) | 2011-05-31 | 2011-05-31 | Method for preparing Cu diffusion doped ZnO base semiconductor by adopting laser pulse deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101433961A CN102372500A (en) | 2011-05-31 | 2011-05-31 | Method for preparing Cu diffusion doped ZnO base semiconductor by adopting laser pulse deposition method |
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| CN102372500A true CN102372500A (en) | 2012-03-14 |
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| CN2011101433961A Pending CN102372500A (en) | 2011-05-31 | 2011-05-31 | Method for preparing Cu diffusion doped ZnO base semiconductor by adopting laser pulse deposition method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104593733A (en) * | 2015-02-13 | 2015-05-06 | 哈尔滨工业大学 | Pulsed laser deposition preparation method for copper-doped zinc oxide nanorod |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1933205A (en) * | 2005-08-12 | 2007-03-21 | 三星电子株式会社 | Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same |
| US20080187684A1 (en) * | 2007-02-07 | 2008-08-07 | Imra America, Inc. | Method for depositing crystalline titania nanoparticles and films |
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2011
- 2011-05-31 CN CN2011101433961A patent/CN102372500A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1933205A (en) * | 2005-08-12 | 2007-03-21 | 三星电子株式会社 | Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same |
| US20080187684A1 (en) * | 2007-02-07 | 2008-08-07 | Imra America, Inc. | Method for depositing crystalline titania nanoparticles and films |
Non-Patent Citations (2)
| Title |
|---|
| XIAO-LI,LI ET AL.: "Role of donor defects in enhancing ferromagnetism of Cu-doped ZnO films", 《JOURNAL OF APPLIED PHYSICS》, vol. 105, 31 December 2009 (2009-12-31) * |
| 于业梅: "脉冲激光沉积制备Cu掺杂ZnO薄膜的研究", 《中国优秀硕士学位论文全文数据库 基础科学辑》, 15 March 2010 (2010-03-15) * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104593733A (en) * | 2015-02-13 | 2015-05-06 | 哈尔滨工业大学 | Pulsed laser deposition preparation method for copper-doped zinc oxide nanorod |
| CN104593733B (en) * | 2015-02-13 | 2017-01-04 | 哈尔滨工业大学 | The pulsed laser deposition preparation method of copper doped zinc oxide nanometer rods |
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Application publication date: 20120314 |