CN102365587B - Euv微光刻的照明光学系统和这种照明光学系统的euv衰减器、具有这种照明光学系统的照明系统和投射曝光装置 - Google Patents

Euv微光刻的照明光学系统和这种照明光学系统的euv衰减器、具有这种照明光学系统的照明系统和投射曝光装置 Download PDF

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Publication number
CN102365587B
CN102365587B CN200980158506.2A CN200980158506A CN102365587B CN 102365587 B CN102365587 B CN 102365587B CN 200980158506 A CN200980158506 A CN 200980158506A CN 102365587 B CN102365587 B CN 102365587B
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China
Prior art keywords
attenuator
euv
illumination
optical system
facet
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CN200980158506.2A
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English (en)
Chinese (zh)
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CN102365587A (zh
Inventor
N.施米茨
J.哈特杰斯
U.宾格尔
B.普尼尼
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Microscoopes, Condenser (AREA)
CN200980158506.2A 2009-03-27 2009-03-27 Euv微光刻的照明光学系统和这种照明光学系统的euv衰减器、具有这种照明光学系统的照明系统和投射曝光装置 Active CN102365587B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2009/002247 WO2010108516A1 (en) 2009-03-27 2009-03-27 Illumination optical system for euv microlithography and euv attenuator for an illumination optical system of this kind, illumination system and projection exposure installation having an illumination optical system of this kind

Publications (2)

Publication Number Publication Date
CN102365587A CN102365587A (zh) 2012-02-29
CN102365587B true CN102365587B (zh) 2015-07-22

Family

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CN200980158506.2A Active CN102365587B (zh) 2009-03-27 2009-03-27 Euv微光刻的照明光学系统和这种照明光学系统的euv衰减器、具有这种照明光学系统的照明系统和投射曝光装置

Country Status (4)

Country Link
US (1) US9482959B2 (cg-RX-API-DMAC7.html)
JP (1) JP6041304B2 (cg-RX-API-DMAC7.html)
CN (1) CN102365587B (cg-RX-API-DMAC7.html)
WO (1) WO2010108516A1 (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012207377A1 (de) * 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
DE102012210174A1 (de) * 2012-06-18 2013-06-06 Carl Zeiss Smt Gmbh Optisches Bauelement
CN105359038B (zh) 2013-06-18 2018-08-10 Asml荷兰有限公司 光刻方法和光刻系统
DE102013218131A1 (de) * 2013-09-11 2015-03-12 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie Beleuchtungssystem für die EUV-Projektionslithographie
DE102013218749A1 (de) * 2013-09-18 2015-03-19 Carl Zeiss Smt Gmbh Beleuchtungssystem sowie Beleuchtungsoptik für die EUV-Projektionslithografie
US9575412B2 (en) * 2014-03-31 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for reducing pole imbalance by adjusting exposure intensity
DE102017211443A1 (de) 2017-07-05 2019-01-10 Carl Zeiss Smt Gmbh Metrologiesystem mit einer EUV-Optik
DE102019202868A1 (de) * 2019-03-04 2020-09-10 Carl Zeiss Smt Gmbh Aktuatoreinrichtung und Verfahren zur Ausrichtung eines optischen Elements, optische Baugruppe sowie Projektionsbelichtungsanlage
DE102019206868A1 (de) 2019-05-13 2019-07-04 Carl Zeiss Smt Gmbh Feldfacettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage
DE102019206867A1 (de) 2019-05-13 2019-07-11 Carl Zeiss Smt Gmbh Optisches Element für eine Projektionsbelichtungsanlage
CN118151351A (zh) * 2024-03-25 2024-06-07 上海镭望光学科技有限公司 一种照明系统远心度补偿方法及补偿装置

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WO2004100236A1 (ja) * 2003-05-09 2004-11-18 Nikon Corporation 照明光学系、投影露光装置、マイクロデバイスの製造方法、照明装置の製造方法、投影露光装置の調整方法、及び投影露光装置の製造方法
CN1641482A (zh) * 2003-12-18 2005-07-20 Asml荷兰有限公司 光刻装置及器件制造方法
CN1272871C (zh) * 2002-12-19 2006-08-30 株式会社村田制作所 介电滤波器导电盖、介电滤波器、介电双工器及通信装置
US20080165925A1 (en) * 2005-06-21 2008-07-10 Carl Zeiss Smt Ag Double-facetted illumination system with attenuator elements on the pupil facet mirror
US20080212059A1 (en) * 2006-12-18 2008-09-04 Carl Zeiss Smt Ag Microlithography illumination systems, components and methods

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DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
DE19955984A1 (de) 1999-11-20 2001-05-23 Zeiss Carl Optische Abbildungsvorrichtung, insbesondere Objektiv mit wenigstens einer Systemblende
US7333178B2 (en) * 2002-03-18 2008-02-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60326063D1 (de) * 2002-03-18 2009-03-19 Asml Netherlands Bv Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
JPWO2004068564A1 (ja) * 2002-12-26 2006-05-25 株式会社ニコン 照明光学系、照明装置、投影露光装置、及び露光方法
DE602004031844D1 (de) * 2003-07-30 2011-04-28 Zeiss Carl Smt Gmbh Beleuchtungssystem für die mikrolithographie
JP2006128321A (ja) * 2004-10-27 2006-05-18 Nikon Corp 照明光学系、露光装置及びマイクロデバイスの製造方法
WO2007093433A1 (de) * 2006-02-17 2007-08-23 Carl Zeiss Smt Ag Beleuchtungssystem für die mikro-lithographie, projektionsbelichtungsanlage mit einem derartigen beleuchtungssystem
EP2020679A4 (en) 2006-05-25 2011-04-13 Nikon Corp OPTICAL LIGHTING DEVICE, EXPOSURE DEVICE AND DEVICE MANUFACTURING METHOD
DE102007061194A1 (de) * 2006-12-18 2008-06-19 Carl Zeiss Smt Ag Beleuchtungssystem für die EUV-Mikro-Lithografie, Projektionsbelichtungsanlage für die EUV-Mikro-Lithografie, Verfahren zur Korrektur der Elliptizität und/oder der Uniformität innerhalb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie mit dem Herstellungsverfahren hergestelltes Bauteil
JP4962203B2 (ja) 2007-08-08 2012-06-27 株式会社ニコン Ｅｕｖ露光装置、露光方法およびデバイス製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1272871C (zh) * 2002-12-19 2006-08-30 株式会社村田制作所 介电滤波器导电盖、介电滤波器、介电双工器及通信装置
WO2004100236A1 (ja) * 2003-05-09 2004-11-18 Nikon Corporation 照明光学系、投影露光装置、マイクロデバイスの製造方法、照明装置の製造方法、投影露光装置の調整方法、及び投影露光装置の製造方法
CN1641482A (zh) * 2003-12-18 2005-07-20 Asml荷兰有限公司 光刻装置及器件制造方法
US20080165925A1 (en) * 2005-06-21 2008-07-10 Carl Zeiss Smt Ag Double-facetted illumination system with attenuator elements on the pupil facet mirror
US20080212059A1 (en) * 2006-12-18 2008-09-04 Carl Zeiss Smt Ag Microlithography illumination systems, components and methods

Also Published As

Publication number Publication date
WO2010108516A1 (en) 2010-09-30
JP6041304B2 (ja) 2016-12-07
US20120069313A1 (en) 2012-03-22
US9482959B2 (en) 2016-11-01
CN102365587A (zh) 2012-02-29
JP2012522358A (ja) 2012-09-20

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