CN102364704B - 一种CdTe/PbTe中红外发光器件及其制备方法 - Google Patents
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- 229910002665 PbTe Inorganic materials 0.000 title claims abstract description 49
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000004020 luminiscence type Methods 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 8
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 229910004611 CdZnTe Inorganic materials 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 25
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- 229910016036 BaF 2 Inorganic materials 0.000 claims description 6
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- 239000011701 zinc Substances 0.000 description 3
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Abstract
本发明公开了一种CdTe/PbTe中红外发光器件及其制备方法,它以CdZnTe或BaF2或GaAs或Si或Ge作为基底,利用分子束外延设备在基底上生长CdTe/PbTe半导体异质结,异质结的发光波长在2~5um中红外波段,基于PbTe和CdTe的极性界面效应可获得强中红外光的发射。它既可直接作为光致中红外发光器件使用,也可作为电致中红外发光器件的有源区材料得到应用,如中红外发光二极管、中红外激光二极管等。
Description
技术领域
本发明专利涉及一种中红外波段的异质结半导体发光器件及其制备方法。
背景技术
PbTe是一种重要的窄带隙半导体中红外光电材料,用此材料制作的中红外发光器件具有发光结构简单易行,尺寸小等优点,用于微量气体分析具有高灵敏性,因此在国防、环境监控和医学、生物等诸多领域得到应用,例如,用于城市道路中汽车尾气、化工厂有毒气体的实时检测,其研究、开发乃至生产受到关注。在20世纪80年代底和90年代初,PbSe/PbSrSe,PbTe/PbEuTe半导体异质结发光器件出现,不久就被应用到了上述许多领域,但是至今该类器件还需要在很低的温度下(液氮)才能工作,器件性能还不够理想,器件输出光功率也比较小(<1mW),因此提高IV-VI半导体中红外发光的工作温度和发光效率是研究的重点。
发明内容
本发明的目的在于针对现有技术的不足,提供一种CdTe/PbTe中红外发光器件及其制备方法。
本发明的目的是通过以下技术方案来实现的:
一种CdTe/PbTe中红外发光器件,包括基底和沉积在基底上的CdTe/PbTe异质结,所述CdTe/PbTe异质结主要由窄带隙PbTe半导体薄膜和较宽带隙CdTe半导体薄膜构成。
一种上述CdTe/PbTe中红外发光器件的制备方法,该方法包括以下步骤:
(1)准备CdZnTe、BaF2、GaAs、Si或Ge基底;
(2)利用分子束外延(MBE)设备生长PbTe单晶薄膜,PbTe单晶薄膜的生长温度为300~350℃,厚度为500~2000nm;
(3)再利用分子束外延(MBE)设备在PbTe薄膜上生长CdTe,CdTe薄膜的生长温度为50~275℃,厚度为50~500nm。
本发明的有益效果是:在室温下能够测量到强中红外发光,比PbTe薄膜或PbTe/PbSrTe半导体异质结发光强度大数倍。
附图说明
图1是PbTe半导体薄膜发光和CdTe/PbTe半导体异质结发光谱的效果比较图;
图2为改变CdTe薄膜的生长温度,CdTe/PbTe中红外发光器件发光强度效果图。
具体实施方式
最近,我们在研究中发现了由岩盐矿晶体结构PbTe与闪锌矿晶体结构CdTe组成的半导体异质结可以大大增强PbTe的发光效率,比PbTe/PbEuTe,PbTe/PbSrTe发光强很多倍,发光波长在3~4微米,我们发现发光增强的物理机理是由PbTe和CdTe的极性界面效应导致的。它既可直接作为光致中红外发光器件使用,也可作为电致中红外发光器件的有源区材料得到应用,如中红外发光二极管、中红外激光二极管等。
本发明无掺杂PbTe半导体单晶薄膜为基,在其表上生长一层CdTe纳米薄膜层构成一种对于中红外波段发光的CdTe/PbTe半导体异质结。无掺杂PbTe半导体单晶薄膜可以通过中国专利200810060092.7公开的方法制备,也可以通过其它方法制备得到。
本发明CdTe/PbTe中红外发光器件包括基底和沉积在基底上的CdTe/PbTe异质结,所述CdTe/PbTe异质结主要由窄带隙PbTe半导体薄膜和较宽带隙CdTe半导体薄膜构成。具体方案如下:
选用CdZnTe、BaF2、GaAs、Si或Ge作为基底,按照中国专利200810060092.7半导体单晶薄膜的制备方法,利用分子束外延(MBE)设备在CdZnTe、BaF2、GaAs、Si或Ge基底上生长无掺杂的PbTe半导体单晶薄膜,再利用分子束外延(MBE)设备在PbTe薄膜上生长CdTe半导体薄膜构成异质结。
具体地,该CdTe/PbTe中红外发光器件得制备方法包括以下步骤:
(1)准备CdZnTe、BaF2、GaAs、Si或Ge基底。
(2)利用分子束外延(MBE)设备生长PbTe单晶薄膜,PbTe单晶薄膜的生长温度为300~350℃,厚度为500~2000nm。
(3)再利用分子束外延(MBE)设备在PbTe薄膜上生长CdTe,CdTe薄膜的生长温度为50~275℃,厚度为50~500nm。
下面根据附图和实施例作进一步的说明,本发明的目的和效果将变得更加明显。
实施例1
(1)Cd0.96Zn0.04Te、BaF2、GaAs、Si或Ge基底准备
Cd0.96Zn0.04Te、BaF2、GaAs、Si或Ge单晶基底由市场购买,晶向<111>,在外延生长薄膜前,要先经过化学抛光、去氧化层和高温除气处理。
(2)MBE生长PbTe单晶薄膜
在Cd0.96Zn0.04Te基底上采用分子束外延方法生长PbTe薄膜,通过调节和控制生长温度、VI/IV族的束流比,获得PbTe单晶薄膜,生长温度350℃,薄膜厚度500~2000nm,载流子浓度5×1017~1018cm-3,载流子迁移率~500cm2/V·s。
(3)PbTe单晶薄膜表面上生长CdTe薄膜,通过调节和控制生长温度、Te/Cd束流比,获得CdTe薄膜,典型的CdTe薄膜生长温度250℃,厚度500~2000nm。
(4)将外延片从分子束外延设备中取出直接进行发光测量。结果如图1所示。
实施例2
保持PbTe单晶薄膜生长参数不变(生长温度350℃,薄膜厚度500nm),改变CdTe薄膜的生长温度,得到了不同发光强度增强倍数的效果,结果如图2所示。
上述实施例用来解释说明本发明,而不是对本发明进行限制,在本发明的精神和权利要求的保护范围内,对本发明作出的任何修改和改变,都落入本发明的保护范围。
Claims (1)
1.一种CdTe/PbTe中红外发光器件的制备方法,其特征在于,该方法包括以下步骤:
(1)准备CdZnTe、BaF2、GaAs、Si或Ge基底;
(2)利用分子束外延设备生长PbTe单晶薄膜,PbTe单晶薄膜的生长温度为300-350℃,厚度为500-2000nm;
(3)再利用分子束外延设备在PbTe薄膜上生长CdTe,CdTe薄膜的生长温度为50-275℃,厚度为50-500nm。
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A. Belenchuk等.HWBE GROWTH OF PbTe/CdTe SUPERLATTICES ON BaF2/CaF2/Si(111) SUBSTRATES.《Moldavian Journal of the Physical Sciences》.2002,(第1期), |
HWBE GROWTH OF PbTe/CdTe SUPERLATTICES ON BaF2/CaF2/Si(111) SUBSTRATES;A. Belenchuk等;《Moldavian Journal of the Physical Sciences》;20021231(第1期);全文 * |
P. Dziawa等.Structural and optical characterization of epitaxial layers of CdTe/PbTe grown on BaF2 (111) substrates.《Institute of Physics of Polish Academy of Sciences》.2005,(第3期), |
Structural and optical characterization of epitaxial layers of CdTe/PbTe grown on BaF2 (111) substrates;P. Dziawa等;《Institute of Physics of Polish Academy of Sciences》;20050218(第3期);1167页至1170页,表格1 * |
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